CN202815136U - Low-cost short circuit detection circuit of medium and high voltage large power IGBT - Google Patents
Low-cost short circuit detection circuit of medium and high voltage large power IGBT Download PDFInfo
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- CN202815136U CN202815136U CN201220444103.3U CN201220444103U CN202815136U CN 202815136 U CN202815136 U CN 202815136U CN 201220444103 U CN201220444103 U CN 201220444103U CN 202815136 U CN202815136 U CN 202815136U
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Abstract
The present utility model discloses a low-cost short circuit detection circuit of a medium and high voltage large power IGBT. The circuit is characterized in that a PNP triode Q17 is used for controlling a 60 Vdc to supply power for a capacitor C22 through a resistor R33, and detection of a Vcesat is realized; a short circuit protection threshold value Vs is set through a diode D22, the voltage stabilizing value of the voltage stabilizing diode D22 is changed to make the diode adapt to IGBTs of different voltage and power grades; the resistor R33 is used for supplying power to the capacitor C22 to realize a short circuit protection threshold value to set a delay time, and the short circuit continuous time can be adjusted through adjusting the resistor R33 and the capacitor C22. The circuit is small in devices, low in costs, high in reliability, convenient and adjustable in short circuit detection movement threshold value, and convenient and adjustable in delay time.
Description
Technical field
The utility model belongs to circuit protection field, particularly relates to a kind of frequency converter short-circuit detecting circuit.
Background technology
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, by the compound full-control type voltage driven type power semiconductor device that BJT (double pole triode) and MOS (insulating gate type field effect tube) form, have the advantage of low conduction voltage drop two aspects of the high input impedance of MOSFET and GTR concurrently.
In frequency converter, IGBT is very crucial device, must do omnibearing protection to it.And the short-circuit protection of the IGBT most important thing especially.When the frequency converter short circuit occurs, usually all be accompanied by serious equipment failure, maloperation, most probably cause damage of equipment or human casualty accident.And the short-circuit protection of IGBT is avoided one of best method of this consequence just.
Along with popularizing of jumbo IGBT more than the 3300V, IGBT uses more and more at the frequency converter of mesohigh.What the IGBT method for detecting short circuit that adopts traditionally generally adopted is the method that detects the saturation conduction pressure drop Vcesat of IGBT.But because the characteristic of high pressure IGBT itself, Vcesat is subjected to IGBT grid voltage Vge, IGBT On current IC, temperature and IGBT conducting, the impact of turn-off time, changes larger.Traditional method for detecting short circuit exists such as detection threshold and is difficult for the shortcomings such as change, easily wrong report, high cost, has brought adverse influence to product competitiveness.
Summary of the invention
Goal of the invention: a kind of low-cost short-circuit detecting circuit of middle high-pressure high-power IGBT is provided, make it to have that device is few, cost is low, reliability is high, short-circuit detecting operating valve value convenient adjustable, time delay the convenient advantage such as adjustable.
Technical scheme: in a kind of, the low-cost short-circuit detecting circuit of high-power IGBT, comprise the IGBT-driver utmost point, the IGBT-C utmost point, the IGBT-G utmost point, the IGBT-fault utmost point, voltage stabilizing diode D22, resistance R 33, capacitor C 22, NPN triode Q18, PNP triode Q17, DC voltage-stabilizing 60Vdc, triode Q11, diode D1, diode D2, diode D20, diode D19, diode D25, resistance R 45, resistance R 20, capacitor C 30, it is characterized in that, PNP triode Q17 control 60Vdc gives capacitor C 22 chargings by resistance R 33, realizes the detection to Vcesat; Set short-circuit protection threshold values Vs by diode D22, for adapting to high pressure IGBT, this threshold values is made as 40V～55V; Can make it to adapt to the IGBT of different voltages, power grade by the voltage stabilizing value of change stabilivolt D22; Charge to the short-circuit protection threshold values by 33 pairs of capacitor C 22 of resistance R and set time delay, adjusting resistance R33, capacitor C 22 are the capable of regulating duration of short-circuit;
When IGBT-driver is high level (be generally+15V), and NPN triode Q18 conducting, Q17 provides turn-on condition for the PNP triode, and DC voltage-stabilizing 60Vdc is by 22 chargings of 33 pairs of capacitor C of resistance R; If this moment, IGBT was not short-circuited, the conduction voltage drop Vce of collector and emitter can be reduced to saturation conduction pressure drop Vcesat very soon, and the voltage on the capacitor C 22 is clamped at Vcesat voltage by diode D20, D19, far do not reach the short-circuit protection threshold values, at this moment, detecting IGBT is not short-circuited;
If IGBT is short-circuited, electric current will flow through the IGBT-C utmost point greatly this moment, and the Vce voltage of IGBT raises rapidly; When Vce voltage rose to short-circuit protection threshold values Vs, capacitor C 22 both end voltage also charged to Vs voltage by Vcesat voltage by resistance R 33, and this moment, stabilivolt D22 was breakdown, triode Q11 conducting; Drag down the grid voltage Vge of IGBT by diode D1, IGBT is turn-offed; By diode D2 output low level, quote the IGBT short-circuit signal to controller; The duration of charging that capacitor C 22 charges to Vs voltage by Vcesat voltage by resistance R 33 has determined the duration of IGBT short circuit; At this moment, detecting IGBT is short-circuited;
When IGBT-driver when low (be generally-10V), capacitor C 22 is by diode D25, resistance R 20 discharges, for next time charging is prepared; Capacitor C 30 is used to and prevents that due to voltage spikes from disturbing; For limiting capacitance C22 voltage is subjected to the excessive impact of Vce change in voltage, resistance R 45 is used for limiting capacitance C22 by the electric current of diode D20, D19.
Advantage of the present utility model and beneficial effect: this circuit all adopts discrete device to finish, and has reliability height, strong, with low cost, the adaptable advantage of antijamming capability; And the voltage stabilizing value of change stabilivolt D22 can make it to adapt to the IGBT of different voltages, power grade; Adjusting resistance R33, capacitor C 22 are the capable of regulating duration of short-circuit, thereby can be applied in flexibly on the IGBT of different voltages, power grade.
Description of drawings
Fig. 1 is the utility model circuit diagram;
Fig. 2 is the utility model detection waveform synoptic diagram.
Embodiment
In order to make the purpose, technical solutions and advantages of the present invention clearer, describe the present invention below in conjunction with the drawings and specific embodiments.
As shown in Figure 1, a kind of low-cost short-circuit detecting circuit of middle high-pressure high-power IGBT, comprise the IGBT-driver utmost point, the IGBT-C utmost point, the IGBT-G utmost point, the IGBT-fault utmost point, voltage stabilizing diode D22, resistance R 33, capacitor C 22, NPN triode Q18, PNP triode Q17, DC voltage-stabilizing 60Vdc, triode Q11, diode D1, diode D2, diode D20, diode D19, diode D25, resistance R 45, resistance R 20, capacitor C 30, it is characterized in that, Q17 control 60Vdc gives capacitor C 22 chargings by resistance R 33, realizes the detection to Vcesat; Set short-circuit protection threshold values Vs by diode D22, for adapting to high pressure IGBT, this threshold values is made as 40V～55V, charges to the short-circuit protection threshold values by 33 pairs of capacitor C 22 of resistance R and sets time delay; IGBT can bear short circuit duration and be generally 10 μ S.
When IGBT-driver is high level (be generally+15V), and NPN triode Q18 conducting, Q17 provides turn-on condition for the PNP triode, and DC voltage-stabilizing 60Vdc is by 22 chargings of 33 pairs of capacitor C of resistance R; If this moment, IGBT was not short-circuited; the conduction voltage drop Vce of collector and emitter can be reduced to saturation conduction pressure drop Vcesat very soon; and the voltage on the capacitor C 22 is clamped at Vcesat voltage by diode D20, D19; far do not reach the short-circuit protection threshold values; at this moment, detecting IGBT is not short-circuited.
If IGBT is short-circuited, electric current will flow through the IGBT-C utmost point greatly this moment, and the Vce voltage of IGBT raises rapidly; When Vce voltage rose to short-circuit protection threshold values Vs, capacitor C 22 both end voltage also charged to Vs voltage by Vcesat voltage by resistance R 33, and this moment, stabilivolt D22 was breakdown, triode Q11 conducting; Drag down the grid voltage Vge of IGBT by diode D1, IGBT is turn-offed; By diode D2 output low level, quote the IGBT short-circuit signal to controller; The duration of charging that capacitor C 22 charges to Vs voltage by Vcesat voltage by resistance R 33 has determined the duration of IGBT short circuit; At this moment, detecting IGBT is short-circuited.
When IGBT-driver when low (be generally-10V), capacitor C 22 is by diode D25, resistance R 20 discharges, for next time charging is prepared; Capacitor C 30 is used to and prevents that due to voltage spikes from disturbing; For limiting capacitance C22 voltage is subjected to the excessive impact of Vce change in voltage, resistance R 45 is used for limiting capacitance C22 by the electric current of diode D20, D19.
In one embodiment, in the actual detection waveform synoptic diagram, CH1 represents the IGBT drive waveforms as shown in Figure 2; CH2 represents capacitor C 22 both end voltage; When the Vge of IGBT is CH1 when becoming high level by low level, IGBT begins conducting.This moment, capacitor C 22 began charging, and when capacitor C 22 voltages were charged to stabilivolt voltage stabilizing value, stabilivolt was breakdown, and C22 voltage is by the stabilivolt clamper, so the level of CH2 is uprised by low, and is then constant.Represent that the IGBT short-circuit protection works when the level constant of CH2, the Vge of CH1 becomes low level, and expression IGBT closes.Like this, when IGBT is short-circuited, will be protected.In addition, in order to make things convenient for contrast test, the Vge of IGBT is p-10V reference.So the high level of Vge is 25V, the short-circuit protection threshold value setting is 55V; When short circuit occured, the C22 both end voltage charged to 55V in 14 μ S, and short-circuit protection circuit works, and the IGBT grid voltage is reduced, and then close IGBT; Can make it the degree that reaches satisfied the actual duration of short-circuit by adjusting R33, C22.
This circuit all adopts discrete device to finish, and has reliability height, strong, with low cost, the adaptable advantage of antijamming capability; And the voltage stabilizing value of change stabilivolt D22 can make it to adapt to the IGBT of different voltages, power grade; Adjusting resistance R33, capacitor C 22 are the capable of regulating duration of short-circuit, thereby can be applied in flexibly on the IGBT of different voltages, power grade.
Claims (5)
1. the low-cost short-circuit detecting circuit of a middle high-pressure high-power IGBT, comprise the IGBT-driver utmost point, the IGBT-C utmost point, the IGBT-G utmost point, the IGBT-fault utmost point, voltage stabilizing diode D22, resistance R 33, capacitor C 22, NPN triode Q18, PNP triode Q17, DC voltage-stabilizing 60Vdc, triode Q11, diode D1, diode D2, diode D20, diode D19, diode D25, resistance R 45, resistance R 20, capacitor C 30, it is characterized in that, PNP triode Q17 control 60Vdc gives capacitor C 22 chargings by resistance R 33, realizes the detection to Vcesat; Set short-circuit protection threshold values Vs by diode D22, for adapting to high pressure IGBT, this threshold values is made as 40V～55V; Can make it to adapt to the IGBT of different voltages, power grade by the voltage stabilizing value of change stabilivolt D22; Charge to the short-circuit protection threshold values by 33 pairs of capacitor C 22 of resistance R and set time delay, adjusting resistance R33, capacitor C 22 are the capable of regulating duration of short-circuit.
2. the low-cost short-circuit detecting circuit of middle high-pressure high-power IGBT as claimed in claim 1, it is characterized in that, when IGBT-driver is high level, NPN triode Q18 conducting, Q17 provides turn-on condition for the PNP triode, and DC voltage-stabilizing 60Vdc is by 22 chargings of 33 pairs of capacitor C of resistance R; If this moment, IGBT was not short-circuited; the conduction voltage drop Vce of collector and emitter can be reduced to saturation conduction pressure drop Vcesat very soon; and the voltage on the capacitor C 22 is clamped at Vcesat voltage by diode D20, D19; far do not reach the short-circuit protection threshold values; at this moment, detecting IGBT is not short-circuited.
3. the low-cost short-circuit detecting circuit of middle high-pressure high-power IGBT as claimed in claim 1 is characterized in that, if IGBT is short-circuited, electric current will flow through the IGBT-C utmost point greatly this moment, and the Vce voltage of IGBT raises rapidly; When Vce voltage rose to short-circuit protection threshold values Vs, capacitor C 22 both end voltage also charged to Vs voltage by Vcesat voltage by resistance R 33, and this moment, stabilivolt D22 was breakdown, triode Q11 conducting; Drag down the grid voltage Vge of IGBT by diode D1, IGBT is turn-offed; By diode D2 output low level, quote the IGBT short-circuit signal to controller; The duration of charging that capacitor C 22 charges to Vs voltage by Vcesat voltage by resistance R 33 has determined the duration of IGBT short circuit; At this moment, detecting IGBT is short-circuited.
4. the low-cost short-circuit detecting circuit of middle high-pressure high-power IGBT as claimed in claim 1 is characterized in that, when IGBT-driver when low, capacitor C 22 is by diode D25, resistance R 20 discharges, for next time charging is prepared; Capacitor C 30 is used to and prevents that due to voltage spikes from disturbing; For limiting capacitance C22 voltage is subjected to the excessive impact of Vce change in voltage, resistance R 45 is used for limiting capacitance C22 by the electric current of diode D20, D19.
5. the low-cost short-circuit detecting circuit of middle high-pressure high-power IGBT as claimed in claim 1 is characterized in that, described short-circuit protection threshold values Vs, and for adapting to high pressure IGBT, this threshold values is made as 40V～55V; IGBT can bear short circuit duration and be generally 10 μ S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220444103.3U CN202815136U (en) | 2012-09-03 | 2012-09-03 | Low-cost short circuit detection circuit of medium and high voltage large power IGBT |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220444103.3U CN202815136U (en) | 2012-09-03 | 2012-09-03 | Low-cost short circuit detection circuit of medium and high voltage large power IGBT |
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| CN202815136U true CN202815136U (en) | 2013-03-20 |
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| CN201220444103.3U Expired - Lifetime CN202815136U (en) | 2012-09-03 | 2012-09-03 | Low-cost short circuit detection circuit of medium and high voltage large power IGBT |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941114A (en) * | 2014-01-22 | 2014-07-23 | 上海大郡动力控制技术有限公司 | Self-detection method for power module and current sensors of vehicle-used permanent-magnet synchronous motor system |
| CN104034997A (en) * | 2014-06-11 | 2014-09-10 | 台达电子企业管理（上海）有限公司 | Power converter and short circuit detection device and method |
-
2012
- 2012-09-03 CN CN201220444103.3U patent/CN202815136U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941114A (en) * | 2014-01-22 | 2014-07-23 | 上海大郡动力控制技术有限公司 | Self-detection method for power module and current sensors of vehicle-used permanent-magnet synchronous motor system |
| CN103941114B (en) * | 2014-01-22 | 2019-01-18 | 上海大郡动力控制技术有限公司 | The self checking method of automobile permanent magnet synchronous motor system power module and current sensor |
| CN104034997A (en) * | 2014-06-11 | 2014-09-10 | 台达电子企业管理（上海）有限公司 | Power converter and short circuit detection device and method |
| US9887534B2 (en) | 2014-06-11 | 2018-02-06 | Delta Electronics (Shanghai) Co., Ltd. | Power converter, short-circuit detecting device thereof and short-circuit detecting method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100043 Shijingshan District City, the ancient city of Beijing, West Street, No. 19 small and medium enterprises base Patentee after: HICONICS ECO-ENERGY TECHNOLOGY Co.,Ltd. Address before: 100176, No. two, No. 3, Yizhuang Economic Development Zone, Beijing, Beijing, Daxing District, Boxing Patentee before: HICONICS DRIVE TECHNOLOGY CO.,LTD. |
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| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130320 |
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| CX01 | Expiry of patent term |