CN109616525A - 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 - Google Patents
一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 Download PDFInfo
- Publication number
- CN109616525A CN109616525A CN201811434260.4A CN201811434260A CN109616525A CN 109616525 A CN109616525 A CN 109616525A CN 201811434260 A CN201811434260 A CN 201811434260A CN 109616525 A CN109616525 A CN 109616525A
- Authority
- CN
- China
- Prior art keywords
- film
- thin
- insulating layer
- aluminum oxide
- oxide insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 41
- HVXCTUSYKCFNMG-UHFFFAOYSA-N aluminum oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zr+4].[Al+3] HVXCTUSYKCFNMG-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000010276 construction Methods 0.000 title claims abstract description 12
- 238000004528 spin coating Methods 0.000 claims abstract description 22
- 239000002243 precursor Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000032683 aging Effects 0.000 claims abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- 238000003756 stirring Methods 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 12
- 238000009413 insulation Methods 0.000 abstract description 9
- 230000015556 catabolic process Effects 0.000 abstract description 8
- SWCIQHXIXUMHKA-UHFFFAOYSA-N aluminum;trinitrate;nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O SWCIQHXIXUMHKA-UHFFFAOYSA-N 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 229910002651 NO3 Inorganic materials 0.000 description 11
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 159000000013 aluminium salts Chemical class 0.000 description 4
- 229910000329 aluminium sulfate Inorganic materials 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910007875 ZrAlO Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- GGDKOXQCDTUUIG-UHFFFAOYSA-N dialuminum;oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zr+4] GGDKOXQCDTUUIG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
本发明属于薄膜晶体管技术领域，公开了一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法。所述方法包括如下步骤：将五水合硝酸锆和九水合硝酸铝溶于乙二醇单甲醚中，搅拌老化得到前驱体溶液；在ITO玻璃衬底上旋涂所得的前驱体溶液，然后在300～500℃退火处理1～2h，得到锆铝氧化物绝缘层薄膜。在所得锆铝氧化物绝缘层薄膜上通过磁控溅射镀圆形Al电极，得到MIM叠层结构。本发明提高绝缘薄膜的物理化学性能，如漏电流密度从6.71×10‑5A/cm2降低为3.8×10‑7A/cm2，禁带宽度从5.0eV提升为5.8eV，禁带宽度的增大将有利于提高击穿电压。
Description
技术领域
本发明属于薄膜晶体管技术领域，具体涉及一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法。
背景技术
薄膜晶体管(Thin Film Transistor，简称TFT)，是一种用途广泛的半导体器件，其最重要的用途是在显示器中用于驱动液晶排列变化、以及驱动OLED像素发光。TFT中绝缘层能起到存储电容和防止信号串扰等作用，既影响TFT器件的转移性能，又影响其稳定性和寿命。
近年来，金属氧化物绝缘薄膜因其性能优异，具有稳定性好和均匀性好等优点，引起了越来越多研究者的关注。然而，一元氧化物都有各自的优缺点，ZrO2有高的相对介电常数(～27)、较宽的禁带(～5eV)、较好的电学稳定性和界面态密度，但漏电高和击穿电场低；Al2O3的禁带宽度大(～8eV)，从而使得其击穿电场较高且漏电流较低，但相对的其介电常数(～9)比其他高介电常数氧化物要低。因此，如何将多种金属氧化物进行复合，从而做到取长补短，制备性能更优异的绝缘薄膜是个亟待解决的问题。
发明内容
针对以上现有技术存在的缺点和不足之处，本发明的首要目的在于提供一种溶液法制备锆铝氧化物绝缘层薄膜的方法。
本发明的再一目的在于提供一种溶液法制备锆铝氧化物绝缘层薄膜叠层结构的方法。
本发明目的通过以下技术方案实现：
一种溶液法制备锆铝氧化物绝缘层薄膜的方法，包括如下制备步骤：
(1)将Zr(NO3)4·5H2O(五水合硝酸锆)和Al(NO3)3·9H2O(九水合硝酸铝)溶于乙二醇单甲醚(2-MOE)中，搅拌老化得到前驱体溶液；
(2)在ITO玻璃衬底上旋涂步骤(1)所得的前驱体溶液，然后在300～500℃退火处理1～2h，得到锆铝氧化物绝缘层薄膜。
优选地，步骤(1)中所述前驱体溶液中Zr(NO3)4·5H2O的浓度为0.1～0.3mol/L，Al(NO3)3·9H2O的浓度为0.1～0.3mol/L。
优选地，步骤(2)中所述旋涂的工艺条件为：转速4000～6000rpm，匀胶次数1～5次，匀胶时间30～40s，每次匀胶之间退火温度350℃，时间3～5min。
一种溶液法制备锆铝氧化物绝缘层薄膜叠层结构的方法，在所得锆铝氧化物绝缘层薄膜上通过磁控溅射镀圆形Al电极，得到MIM(ITO/ZrAlOx/Al)叠层结构。
本发明的原理为：将Zr(NO3)4·5H2O(五水合硝酸锆)和Al(NO3)3·9H2O(九水合硝酸铝)溶于乙二醇单甲醚中可以得到含锆盐和铝盐的前驱体溶液，将溶液旋涂、热退火处理后，溶液发生水解和聚合等反应形成锆铝氧化物薄膜。
与现有技术相比，本发明具有如下优点及有益效果：
本发明通过将Zr(NO3)4·5H2O(五水合硝酸锆)和Al(NO3)3·9H2O(九水合硝酸铝)混合溶于乙二醇单甲醚中，得到含锆盐和铝盐的前驱体溶液。利用锆盐和铝盐混合的前驱体溶液可以制备得到锆铝氧化物薄膜，从而能够整合氧化锆和氧化铝的优势，提高绝缘薄膜的物理化学性能，如漏电流密度从6.71×10-5A/cm2降低为3.8×10-7A/cm2，禁带宽度从5.0eV提升为5.8eV，同时禁带宽度的增大将有利于提高击穿电压。
附图说明
图1是实施例1所得锆铝氧化物绝缘层薄膜的漏电流密度曲线图。
图2是实施例2所得锆铝氧化物绝缘层薄膜的漏电流密度曲线图。
图3是实施例1所得锆铝氧化物绝缘层薄膜的介电常数曲线图。
图4是实施例2所得锆铝氧化物绝缘层薄膜的介电常数曲线图。
图5是实施例1所得锆铝氧化物绝缘层薄膜的禁带宽度拟合图。
图6是实施例2所得锆铝氧化物绝缘层薄膜的禁带宽度拟合图。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述，但本发明的实施方式不限于此。
实施例1
(1)前驱体配制：将1.288g Zr(NO3)4·5H2O(五水合硝酸锆)和0.3751gAl(NO3)3·9H2O(九水合硝酸铝)溶于10ml乙二醇单甲醚(2-MOE)中，搅拌老化得到含锆盐0.3mol/L和铝盐0.1mol/L的前驱体溶液。
(2)衬底制备：在玻璃基板表面沉积一层150n。m的ITO电极，清洗烘干，得到ITO玻璃衬底。
(3)在ITO玻璃衬底按所选工艺参数旋涂步骤(1)所得的前驱体溶液，旋涂转速5000rpm，匀胶时间40s，匀胶次数2次，每次匀胶之间退火温度350℃，时间4min，然后在350℃退火处理1h，得到锆铝氧化物绝缘层薄膜。
(4)在步骤(3)的氧化锆绝缘层薄膜上通过磁控溅射镀100nm的圆形Al电极，制备MIM(ITO/ZrAlOx/Al)叠层结构。
本实施例所得锆铝氧化物绝缘层薄膜的漏电流测试结果如图1所示。
本实施例所得锆铝氧化物绝缘层薄膜的介电常数测试结果如图3所示。
本实施例所得锆铝氧化物绝缘层薄膜的禁带宽度测试结果如图5所示。
测试结果表明本实施例制备的锆铝氧化物绝缘层薄膜具有较好的绝缘性能，其漏电流密度为3.8×10-7A/cm2，相比纯的氧化锆绝缘薄膜(漏电流密度为6.71×10-5A/cm2)有较大的提高，介电常数约为25，禁带宽度为5.63eV，禁带宽度的增大有利于提高击穿电压。相比纯的氧化锆绝缘薄膜，锆铝氧化物绝缘层薄膜可以在保持较高介电常数的前提下提高禁带宽度，从而降低漏电流密度、提高击穿电压。
实施例2
(1)前驱体配制：将0.4293g Zr(NO3)4·5H2O(五水合硝酸锆)和1.1253gAl(NO3)3·9H2O(九水合硝酸铝)溶于10ml乙二醇单甲醚(2-MOE)中，搅拌老化得到含锆盐0.1mol/L和铝盐0.3mol/L的前驱体溶液。
(2)衬底制备：在玻璃基板表面沉积一层150nm的ITO电极，清洗烘干，得到ITO玻璃衬底。
(3)在ITO玻璃衬底按所选工艺参数旋涂步骤(1)所得的前驱体溶液，旋涂转速5000rpm，匀胶时间40s，匀胶次数2次，每次匀胶之间退火温度350℃，时间4min，然后在200℃退火处理1h，得到锆铝氧化物绝缘层薄膜。
(4)在步骤(3)的氧化锆绝缘层薄膜上通过磁控溅射镀100nm的圆形Al电极，制备MIM(ITO/ZrO2/Al)叠层结构。
本实施例所得锆铝氧化物绝缘层薄膜的漏电流测试结果如图2所示。
本实施例所得锆铝氧化物绝缘层薄膜的介电常数测试结果如图4所示。
本实施例所得锆铝氧化物绝缘层薄膜的禁带宽度测试结果如图6所示。测试结果表明本实施例制备的锆铝氧化物绝缘层薄膜具有较好的绝缘性能，其漏电流密度为3.0×10-7A/cm2，相比纯的氧化锆绝缘薄膜(漏电流密度为6.71×10-5A/cm2)有较大的提高，介电常数约为21，禁带宽度为5.84eV，禁带宽度的增大有利于提高击穿电压。相比纯的氧化锆绝缘薄膜，锆铝氧化物绝缘层薄膜可以在保持较高介电常数的前提下提高禁带宽度，从而降低漏电流密度、提高击穿电压。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其它的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。
Claims (5)
1.一种溶液法制备锆铝氧化物绝缘层薄膜的方法，其特征在于，包括如下制备步骤：
(1)将Zr(NO3)4·5H2O和Al(NO3)3·9H2O溶于乙二醇单甲醚中，搅拌老化得到前驱体溶液；
(2)在ITO玻璃衬底上旋涂步骤(1)所得的前驱体溶液，然后在300～500℃退火处理1～2h，得到锆铝氧化物绝缘层薄膜。
2.根据权利要求1所述的溶液法制备锆铝氧化物绝缘层薄膜的方法，其特征在于，步骤(1)中所述前驱体溶液中Zr(NO3)4·5H2O的浓度为0.1～0.3mol/L。
3.根据权利要求1或2所述的溶液法制备锆铝氧化物绝缘层薄膜的方法，其特征在于，步骤(1)中所述前驱体溶液中Al(NO3)3·9H2O的浓度为0.1～0.3mol/L。
4.根据权利要求3所述的溶液法制备锆铝氧化物绝缘层薄膜的方法，其特征在于，步骤(2)中所述旋涂的工艺条件为：转速4000～6000rpm，匀胶次数1～5次，匀胶时间30～40s，每次匀胶之间退火温度350℃，时间3～5min。
5.一种溶液法制备锆铝氧化物绝缘层薄膜叠层结构的方法，其特征在于，在权利要求1～4任一项所述溶液法制得的锆铝氧化物绝缘层薄膜上通过磁控溅射镀圆形Al电极，得到MIM叠层结构。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811434260.4A CN109616525A (zh) | 2018-11-28 | 2018-11-28 | 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 |
| PCT/CN2019/111352 WO2020108140A1 (zh) | 2018-11-28 | 2019-10-16 | 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811434260.4A CN109616525A (zh) | 2018-11-28 | 2018-11-28 | 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109616525A true CN109616525A (zh) | 2019-04-12 |
Family
ID=66006345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811434260.4A Pending CN109616525A (zh) | 2018-11-28 | 2018-11-28 | 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109616525A (zh) |
| WO (1) | WO2020108140A1 (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020108140A1 (zh) * | 2018-11-28 | 2020-06-04 | 华南理工大学 | 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 |
| CN111415870A (zh) * | 2020-04-17 | 2020-07-14 | 华南理工大学 | 一种改善溶液法制备的金属氧化物tft器件性能的方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020001906A1 (en) * | 2000-06-27 | 2002-01-03 | Park Dae Gyu | Method of manufacturing a gate in a semiconductor device |
| CN102082087A (zh) * | 2009-11-30 | 2011-06-01 | 海力士半导体有限公司 | 包括含碳电极的半导体器件及其制造方法 |
| CN108389777A (zh) * | 2018-01-22 | 2018-08-10 | 华南理工大学 | 一种溶液法制备氧化锆绝缘层薄膜及叠层结构的方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616525A (zh) * | 2018-11-28 | 2019-04-12 | 华南理工大学 | 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 |
-
2018
- 2018-11-28 CN CN201811434260.4A patent/CN109616525A/zh active Pending
-
2019
- 2019-10-16 WO PCT/CN2019/111352 patent/WO2020108140A1/zh active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020001906A1 (en) * | 2000-06-27 | 2002-01-03 | Park Dae Gyu | Method of manufacturing a gate in a semiconductor device |
| CN102082087A (zh) * | 2009-11-30 | 2011-06-01 | 海力士半导体有限公司 | 包括含碳电极的半导体器件及其制造方法 |
| CN108389777A (zh) * | 2018-01-22 | 2018-08-10 | 华南理工大学 | 一种溶液法制备氧化锆绝缘层薄膜及叠层结构的方法 |
Non-Patent Citations (2)
| Title |
|---|
| HUANG CHUAN-XIN等: ""Atomic layer deposition deposited high dielectric constant (k) ZrAlOx gate insulator enabling high performance ZnSnO thin film transistors"", 《SUPERLATTICES AND MICROSTRUCTURES》 * |
| LIU AO 等: ""Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits"", 《ADVANCED MATERIALS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020108140A1 (zh) * | 2018-11-28 | 2020-06-04 | 华南理工大学 | 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 |
| CN111415870A (zh) * | 2020-04-17 | 2020-07-14 | 华南理工大学 | 一种改善溶液法制备的金属氧化物tft器件性能的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020108140A1 (zh) | 2020-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20200003288A (ko) | 반도체 장치 | |
| CN103268878B (zh) | Tft阵列基板、tft阵列基板的制作方法及显示装置 | |
| JP5864875B2 (ja) | 薄膜トランジスタ及びその製造方法並びにそれを含む表示装置 | |
| KR20010060786A (ko) | 인듐-징크-옥사이드로 적용된 투명전극과 이를 에칭하기위한 에천트 | |
| CN107331622A (zh) | 一种采用溶液加工的高介电氧化物绝缘层薄膜晶体管的制备方法 | |
| CN109616525A (zh) | 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法 | |
| CN105655353A (zh) | Tft阵列基板结构及其制作方法 | |
| CN106531782A (zh) | 一种金属氧化物薄膜晶体管及其制备方法 | |
| CN102222672B (zh) | 一种铁酸铋基薄膜层叠结构电容器及其制备方法 | |
| CN103337522A (zh) | 一种金属氧化物薄膜晶体管阵列基板及其制造方法 | |
| CN202957251U (zh) | 一种薄膜晶体管、阵列基板和显示装置 | |
| CN108346703A (zh) | 一种提高溶液法氧化物绝缘层tft偏压稳定性的方法 | |
| CN104072129A (zh) | 一种b位等价锆离子掺杂的钛酸铋钠薄膜 | |
| CN102646595A (zh) | 薄膜晶体管及其制造方法、显示器件 | |
| CN108766889A (zh) | 一种溶液法制备氧化物薄膜晶体管的方法 | |
| CN101000926A (zh) | 铁电场效应晶体管存储器件结构及制备方法 | |
| CN103311313B (zh) | 氧化物薄膜晶体管及其制备方法 | |
| CN103730373B (zh) | 一种半导体器件的制备方法及半导体器件 | |
| CN108447790A (zh) | 一种基于低温氧化锆绝缘层的薄膜晶体管及其制备方法 | |
| CN105097944A (zh) | 薄膜晶体管及其制备方法、阵列基板、显示装置 | |
| CN109300841B (zh) | 阵列基板的制造方法 | |
| CN108389777A (zh) | 一种溶液法制备氧化锆绝缘层薄膜及叠层结构的方法 | |
| CN107452748A (zh) | 元件基板以及显示装置 | |
| CN103708739A (zh) | 一种锌掺杂的钛酸铋钠薄膜及其低温制备方法 | |
| CN102437195A (zh) | 薄膜晶体管及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190412 |