CN108766889A - 一种溶液法制备氧化物薄膜晶体管的方法 - Google Patents
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 13
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 10
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- 229910002651 NO3 Inorganic materials 0.000 description 10
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Abstract
本发明属于薄膜晶体管制备技术领域,公开了一种溶液法制备氧化物薄膜晶体管的方法。将Zr(NO3)4·5H2O和In(NO3)3分别溶于乙二醇单甲醚中,得到绝缘层前驱体溶液和有源层前驱体溶液;在ITO玻璃衬底上旋涂绝缘层前驱体溶液,退火处理,得到氧化锆绝缘层薄膜;在氧化锆绝缘层薄膜上旋涂有源层前驱体溶液,退火处理,得到氧化铟有源层薄膜;在氧化铟有源层上蒸镀源/漏电极,得到氧化物薄膜晶体管。本发明通过制备氧化物前驱体溶液,结合旋涂以及退火工艺制备ZrO2和In2O3薄膜,并以这两种薄膜分别作为绝缘层和有源层制备TFT器件,无需真空环境,成本低,操作简便。
Description
技术领域
本发明属于薄膜晶体管制备技术领域,具体涉及一种溶液法制备氧化物薄膜晶体管的方法。
背景技术
薄膜晶体管(Thin Film Transistor,TFT)作为AMLCD和AMOLED像素中的重要开关元器件,和存储电容一起,组成了显示器的驱动电路,从而实现平板显示器进行大容量、高清晰度和全彩的显示。薄膜晶体管(TFT)作为核心器件,直接决定了显示的质量。
近年来,金属氧化物薄膜晶体管因其优秀的性能而备受研究者关注。目前,大多数氧化物TFT制备多采用真空方法,获取的TFT电学性能表现优异,工艺也较为成熟。但真空法具有靶材利用率低、成分固定等缺点。且工艺成本过高,大规模卷对卷工艺生产困难。
发明内容
针对以上现有技术存在的缺点和不足之处,本发明的首要目的在于提供一种溶液法制备氧化物薄膜晶体管的方法。本发明方法通过制备氧化物前驱体溶液,结合旋涂以及退火工艺制备ZrO2和In2O3薄膜,并以这两种薄膜分别作为绝缘层和有源层制备TFT器件,无需真空环境,成本低,操作简便。
本发明的另一目的在于提供一种通过上述方法制备得到的氧化物薄膜晶体管。
本发明目的通过以下技术方案实现:
一种溶液法制备氧化物薄膜晶体管的方法,包括如下制备步骤:
(1)将Zr(NO3)4·5H2O(五水合硝酸锆)和In(NO3)3(硝酸铟)分别溶于乙二醇单甲醚(2-MOE)中,室温下搅拌老化,分别得到绝缘层前驱体溶液和有源层前驱体溶液;
(2)衬底制备:在玻璃基板表面沉积一层图形化的ITO底栅,清洗烘干,得到ITO玻璃衬底;
(3)在ITO玻璃衬底上旋涂步骤(1)所得绝缘层前驱体溶液,然后退火处理,得到氧化锆绝缘层薄膜;
(4)在氧化锆绝缘层薄膜上旋涂步骤(1)所得有源层前驱体溶液,然后退火处理,得到氧化铟有源层薄膜;
(5)在氧化铟有源层上蒸镀源/漏电极,得到氧化物薄膜晶体管。
优选地,步骤(1)中所述绝缘层前驱体溶液中Zr(NO3)4·5H2O的浓度为0.3~0.6mol/L,有源层前驱体溶液中In(NO3)3的浓度为0.1~0.3mol/L。
优选地,步骤(2)中所述ITO底栅的厚度为150nm。
优选地,步骤(3)中所述旋涂的工艺条件为:转速4000~6000rpm,匀胶次数3~6次,每次匀胶时间30~40s,每次匀胶之间退火温度300℃,时间3~5min。
优选地,步骤(4)中所述旋涂的工艺条件为:转速4000~6000rpm,匀胶次数1~3次,每次匀胶时间30~40s,每次匀胶之间退火温度300℃,时间3~5min。
优选地,步骤(3)和步骤(4)中所述退火处理是指在300℃退火处理1~2h。
优选地,步骤(5)中所述源/漏电极是指厚度为100nm的Al源/漏电极。
一种氧化物薄膜晶体管,通过上述方法制备得到。
本发明的原理为:将Zr(NO3)4·5H2O(五水合硝酸锆)和In(NO3)3(硝酸铟)分别溶于乙二醇单甲醚(2-MOE),可以得到相应的前驱体溶液。利用旋涂工艺使得溶液铺展成膜,并结合高温退火去除湿膜中的有机杂质等,使湿膜发生氧化反应形成相应的氧化物薄膜。
与现有技术相比,本发明具有如下优点及有益效果:
本发明通过制备氧化物前驱体溶液,结合旋涂以及退火工艺制备ZrO2和In2O3薄膜,并以这两种薄膜分别作为绝缘层和有源层制备TFT器件,无需真空环境,成本低,操作简便。
附图说明
图1是实施例1制备的薄膜晶体管的结构示意图。图中编号说明如下:1-玻璃衬底,2-ITO底栅,3-氧化锆绝缘层,4-氧化铟有源层,5-Al源/漏电极。
图2是实施例1所得薄膜晶体管的输出特性曲线图。
图3是实施例1所得薄膜晶体管的转移特性曲线图。
具体实施方式
下面结合实施例及附图对本发明作进一步详细的描述,但本发明的实施方式不限于此。
实施例1
本实施例的一种氧化物薄膜晶体管,通过如下方法制备得到:
(1)前驱体配制:将2.576g Zr(NO3)4·5H2O(五水合硝酸锆)溶于10ml乙二醇单甲醚(2-MOE)中,搅拌老化得到0.6mol/L的绝缘层前驱体溶液;将0.30083g In(NO3)3(硝酸铟)溶于10ml乙二醇单甲醚(2-MOE)中,搅拌老化得到0.1mol/L的有源层前驱体溶液。
(2)衬底制备:在玻璃基板表面沉积一层150nm的ITO电极,清洗烘干,得到ITO玻璃衬底。
(3)在ITO玻璃衬底按所选工艺参数旋涂步骤(1)所得的绝缘层前驱体溶液,旋涂转速6000rpm,每次匀胶时间40s,匀胶次数3次,每次匀胶之间退火温度300℃,时间4min,然后在300℃退火处理1h,得到氧化锆绝缘层薄膜。
(4)在绝缘层上旋涂步骤(1)所得的有源层前驱体溶液,旋涂转速5000rpm,每次匀胶时间40s,匀胶次数3次,每次匀胶之间退火温度300℃,时间4min,然后在300℃退火处理1h,得到氧化铟有源层薄膜。
(5)在氧化铟有源层上通过热蒸发镀Al,获得源/漏电极(厚度为100nm)。
本实施例所得薄膜晶体管的结构示意图如图1所示。由依次层叠的玻璃衬底1,ITO底栅2,氧化锆绝缘层3,氧化铟有源层4和Al源/漏电极5构成。
本实施例所得薄膜晶体管的输出特性曲线图和转移特性曲线图分别如图2和图3所示。由以上结果可知,本发明通过溶液法获取的TFT器件具有优异的电学性能。
实施例2
本实施例的一种氧化物薄膜晶体管,通过如下方法制备得到:
(1)前驱体配制:将1.288g Zr(NO3)4·5H2O(五水合硝酸锆)溶于10ml乙二醇单甲醚(2-MOE)中,搅拌老化得到0.3mol/L的绝缘层前驱体溶液;将0.90249g In(NO3)3(硝酸铟)溶于10ml乙二醇单甲醚(2-MOE)中,搅拌老化得到0.3mol/L的有源层前驱体溶液。
(2)衬底制备:在玻璃基板表面沉积一层150nm的ITO电极,清洗烘干,得到ITO玻璃衬底。
(3)在ITO玻璃衬底按所选工艺参数旋涂步骤(1)所得的绝缘层前驱体溶液,旋涂转速4000rpm,每次匀胶时间30s,匀胶次数6次,每次匀胶之间退火温度300℃,时间5min,然后在300℃退火处理2h,得到氧化锆绝缘层薄膜。
(4)在绝缘层上旋涂步骤(1)所得的有源层前驱体溶液,旋涂转速4000rpm,每次匀胶时间30s,匀胶次数1次,每次匀胶之间退火温度300℃,时间5min,然后在300℃退火处理2h,得到氧化铟有源层薄膜。
(5)在氧化铟有源层上通过热蒸发镀Al,获得源/漏电极(厚度为100nm)。
本实施例所得薄膜晶体管与实施例1具有同样优异的电学性能。
实施例3
本实施例的一种氧化物薄膜晶体管,通过如下方法制备得到:
(1)前驱体配制:将2.147g Zr(NO3)4·5H2O(五水合硝酸锆)溶于10ml乙二醇单甲醚(2-MOE)中,搅拌老化得到0.5mol/L的绝缘层前驱体溶液;将0.60166g In(NO3)3(硝酸铟)溶于10ml乙二醇单甲醚(2-MOE)中,搅拌老化得到0.2mol/L的有源层前驱体溶液。
(2)衬底制备:在玻璃基板表面沉积一层150nm的ITO电极,清洗烘干,得到ITO玻璃衬底。
(3)在ITO玻璃衬底按所选工艺参数旋涂步骤(1)所得的绝缘层前驱体溶液,旋涂转速5000rpm,每次匀胶时间30s,匀胶次数4次,每次匀胶之间退火温度300℃,时间4min,然后在300℃退火处理1.5h,得到氧化锆绝缘层薄膜。
(4)在绝缘层上旋涂步骤(1)所得的有源层前驱体溶液,旋涂转速6000rpm,每次匀胶时间40s,匀胶次数2次,每次匀胶之间退火温度300℃,时间4min,然后在300℃退火处理1.5h,得到氧化铟有源层薄膜。
(5)在氧化铟有源层上通过热蒸发镀Al,获得源/漏电极(厚度为100nm)。
本实施例所得薄膜晶体管与实施例1具有同样优异的电学性能。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其它的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (8)
1.一种溶液法制备氧化物薄膜晶体管的方法,其特征在于包括如下制备步骤:
(1)将Zr(NO3)4·5H2O和In(NO3)3分别溶于乙二醇单甲醚中,室温下搅拌老化,分别得到绝缘层前驱体溶液和有源层前驱体溶液;
(2)衬底制备:在玻璃基板表面沉积一层图形化的ITO底栅,清洗烘干,得到ITO玻璃衬底;
(3)在ITO玻璃衬底上旋涂步骤(1)所得绝缘层前驱体溶液,然后退火处理,得到氧化锆绝缘层薄膜;
(4)在氧化锆绝缘层薄膜上旋涂步骤(1)所得有源层前驱体溶液,然后退火处理,得到氧化铟有源层薄膜;
(5)在氧化铟有源层上蒸镀源/漏电极,得到氧化物薄膜晶体管。
2.根据权利要求1所述的一种溶液法制备氧化物薄膜晶体管的方法,其特征在于:步骤(1)中所述绝缘层前驱体溶液中Zr(NO3)4·5H2O的浓度为0.3~0.6mol/L,有源层前驱体溶液中In(NO3)3的浓度为0.1~0.3mol/L。
3.根据权利要求1所述的一种溶液法制备氧化物薄膜晶体管的方法,其特征在于:步骤(2)中所述ITO底栅的厚度为150nm。
4.根据权利要求1所述的一种溶液法制备氧化物薄膜晶体管的方法,其特征在于步骤(3)中所述旋涂的工艺条件为:转速4000~6000rpm,匀胶次数3~6次,每次匀胶时间30~40s,每次匀胶之间退火温度300℃,时间3~5min。
5.根据权利要求1所述的一种溶液法制备氧化物薄膜晶体管的方法,其特征在于步骤(4)中所述旋涂的工艺条件为:转速4000~6000rpm,匀胶次数1~3次,每次匀胶时间30~40s,每次匀胶之间退火温度300℃,时间3~5min。
6.根据权利要求1所述的一种溶液法制备氧化物薄膜晶体管的方法,其特征在于:步骤(3)和步骤(4)中所述退火处理是指在300℃退火处理1~2h。
7.根据权利要求1所述的一种溶液法制备氧化物薄膜晶体管的方法,其特征在于:步骤(5)中所述源/漏电极是指厚度为100nm的Al源/漏电极。
8.一种氧化物薄膜晶体管,其特征在于:通过权利要求1~7任一项所述的方法制备得到。
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