CN109600876B - 光学封装结构、光学模块及其制造方法 - Google Patents

光学封装结构、光学模块及其制造方法 Download PDF

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CN109600876B
CN109600876B CN201811128738.0A CN201811128738A CN109600876B CN 109600876 B CN109600876 B CN 109600876B CN 201811128738 A CN201811128738 A CN 201811128738A CN 109600876 B CN109600876 B CN 109600876B
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interposer
optical
optical device
substrate
package structure
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CN109600876A (zh
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蔡育轩
赖律名
陈盈仲
汤士杰
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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Abstract

本发明提供一种光学封装结构，其包含：衬底，其具有第一表面；内插件，其通过结合层结合到所述第一表面，从俯视图视角来看，所述内插件具有第一区域；及所述内插件上的光学装置，从所述俯视图视角来看，其具有第二区域，所述第一区域大于所述第二区域。还提供一种用于制造所述光学封装结构的方法。

Description

光学封装结构、光学模块及其制造方法
技术领域
本揭露系关于一光学封装结构，特别系关于可防止光学装置倾斜、移位或旋转之一光学封装结构。
背景技术
在光学系统(例如光扫描传感器、测距传感器或背景光感测系统)中，广泛地使用发光二极管(LED)及/或光检测器。光学装置的对准是关键的，这是由于光学装置的光轴会受到未对准极大地影响。因此，希望具有缩减光学装置在各种应用中的未对准的封装结构及对应的方法。
发明内容
本公开的一些实施例提供一种光学封装结构，其包含：衬底，其具有第一表面；内插件，其通过结合层结合到所述第一表面，从俯视图视角来看，所述内插件具有第一区域；及所述内插件上的光学装置，从所述俯视图视角来看，所述光学装置具有第二区域。所述第一区域大于所述第二区域。
本公开的一些实施例提供一种光学模块，其包含陶瓷衬底、所述陶瓷衬底上的硅内插件、在所述陶瓷衬底与所述硅内插件之间的结合层及安置在所述硅内插件上且电连接到所述硅内插件的光学装置。所述结合层在所述内插件的一个端部处包含第一厚度且在所述内插件的相对端部处包含第二厚度，所述第一厚度不同于所述第二厚度。
本公开的一些实施例提供一种用于制造光学封装结构的方法，其包含：提供内插件，所述内插件在前表面上具有结合衬垫；将光学装置放置在所述内插件的所述前表面上，所述光学装置具有具共晶合金的结合表面；通过光源照明所述共晶合金以将所述光学装置结合到所述内插件；及通过结合层接合所述内插件与衬底。
附图说明
当结合附图阅读时，从以下实施方式最佳地理解本公开的方面。应注意，各种特征可能未按比例绘制。事实上，可出于论述清楚起见，而任意地增加或缩减各种特征的尺寸。
图1是光学系统的横截面视图。
图2A是根据本公开的一些实施例的光学系统200的横截面视图。
图2B是根据本公开的一些实施例的图2A的光学系统200的俯视图。
图3是根据本公开的一些实施例的光学系统300的横截面视图。
图4是根据本公开的一些实施例的光学系统400的透视图。
图5是展示覆盖图4中所说明的光学系统400的盖501的透视图。
图6是根据本公开的一些实施例的用于制造光学封装结构的操作流程。
图7、图8、图9、图10A、图10B及图11是根据本公开的一些实施例的制造工艺期间的各种操作阶段的横截面视图或俯视图。
图12是根据本公开的一些实施例的用于制造光学封装结构的操作流程。
图13是根据本公开的一些实施例的用于制造光学封装结构的操作流程。
具体实施方式
以下公开内容提供用于实施所提供的主题的不同特征的许多不同实施例或实例。以下描述组件以及布置的特定实例以简化本公开。当然，此些组件及布置仅为实例且并不打算为限制性的。在本公开中，在以下描述中提及第一特征形成在第二特征上方或上可包含第一特征与第二特征直接接触地形成的实施例，且还可包含额外特征可在第一特征与第二特征之间形成，使得第一特征与第二特征可能不直接接触的实施例。另外，本公开可在各种实例中重复参考数字及/或字母。此重复是出于简化及清楚的目的，且本身并不指示所论述的各种实施例及/或配置之间的关系。
在下文详细地论述本公开的实施例。然而，应了解，本公开提供可在广泛多种特定情境中体现的许多适用的概念。所论述具体实施例仅为说明性的且并不限制本公开的范围。
此外，为易于描述，本文中可使用例如“在…的下”、“在…下方”、“较低”、“在…上方”、“上部”、“下部”、“左边”、“右边”等等的空间相对术语以描述图中所说明的一个元件或特征与另一元件或特征的关系。除图中所描绘的定向之外，空间相对术语打算涵盖装置在使用或操作中的不同定向。设备可以其它方式定向(旋转90度或处于其它定向)，且本文中所使用的空间相对描述词同样可相应地进行解释。将理解，当称元件“连接到”或“耦合到”另一元件时，其可直接连接到或耦合到另一元件，或可存在介入元件。
阐述本公开的广泛范围的数值范围及参数为近似值，且可尽可能精确地报告具体实例中阐述的数值。然而，一些数值可含有由各别测试测量值中发现的标准差必然引起的某些误差。而且，如本文中所使用，术语“约”通常意味在给定值或范围的±10％、±5％、±1％或±0.5％内。或者，当由所属领域的一般技术人员考虑时，术语“约”意味在平均值的可接受标准误差内。除在操作/实施例中以外，或除非以其它方式明确指定，否则数值范围、量、值及百分比(例如，本文中所公开的材料数量、持续时间、温度、操作条件、量的比率等等的数值范围、量、值及百分比)中的所有应理解为在所有情况下由术语“约”修饰。因此，除非相反指示，否则本公开及所附权利要求书中所阐述的数值参数是可变化的近似值。至少，应根据所报告的有效数字的数值且通过应用一般舍入技术理解每一数值参数。范围可在本文中表达为从一个端点到另一端点或在两个端点之间。除非另外指定，否则本文中所公开的所有范围包含端点。术语“大体上共面”可指沿着同一平面处于若干微米(μm)内(例如，沿着同一平面处于10μm内、5μm内、1μm内或0.5μm内)的两个表面。在称数值或特性“大体”相同时，所述术语可指所述值处于所述值的平均值的±10％、±5％、±1％或±0.5％内。
在用于制造包含衬底及安置于其上的光学装置的光学系统的工艺期间，光学装置通过粘着剂(例如胶、焊锡膏、胶类型粘着剂、膜类型粘着剂或其它适合的结合材料)附接到所述衬底。在粘着剂固化之后，粘着剂的体积或形状可变更，因为所述材料的分子键会改变。因此，光学装置可倾斜、移位或旋转，从而影响所要光学路径。此类现象可影响光学系统的光学性能(例如感测准确度)。
图1是光学系统100的横截面视图。光学系统100包含光学装置10及衬底101，所述光学装置例如激光二极管(LD)、发光二极管(LED)、竖直空腔表面发射激光(VCSEL)二极管、边缘发射激光二极管、其它照明组件或光学接收器。光学装置10通过粘着剂103，例如胶、胶类型粘着剂、膜类型粘着剂或其它适合的结合材料安置或附接到衬底。在一些实施例中，衬底101为用于高可靠性应用(例如汽车电子产品)的陶瓷衬底。陶瓷衬底101阻挡在红外波段内或接近红外波段的红外光或光。
在用于制造图1中的光学装置10的工艺期间，例如，LD通过胶103结合到陶瓷衬底101。在胶103固化之后，胶103的体积或形状可能改变，因为材料的分子键已经改变。因此，LD可能倾斜、移位或旋转，从而会影响沿着LD的光学路径的光轴。此类现象可影响光学系统100的光学性能(例如感测准确度)。以图1中的光学系统100为例，对于具有0.4mm的宽度W1'的光学装置10，假设对光学装置10进行的倾斜测量，即胶103的左侧与右侧之间的高度差ΔT，为约25μm，其中光学装置10可具有仅低于3.585度的倾斜角θ1。由于光学装置10的定向因胶103在固化操作之后的体积变化容易发生改变，因此频繁地发现光学装置10会从原始定向倾斜、移位或旋转。
由于胶103的粘着层的体积变化，光学装置10的倾斜角或旋转角成为光学系统的关键问题中的一个，因为与光学路径的长度成比例的微小倾斜角可能引起相对较大光偏离。在一些实施例中，光学装置10的平面外倾斜角的公差低于0.5度。在一些实施例中，光学装置10的平面内旋转角的公差低于1度。光学装置10的位移是光学系统的关键问题中的一个，因为光学装置的不当位移可能会改变原始光学路径设计。在一些实施例中，光学装置10位移在y/z方向及x方向的公差分别在+/-10μm及+/-20μm内。因此，如图1中所展示，光学装置10的倾斜角(即，3.585度)可超过倾斜角的公差(即，0.5度)。
参考图2A，图2A是根据本公开的一些实施例的光学系统200的横截面视图。图2中的光学装置包含LD 205、内插件202及衬底201。内插件202及LD 205定位于衬底201的第一表面201A上。
LD 205可由LED、VCSEL或可包含一或多个半导体层的另一光学装置替代。半导体层可包含硅、碳化硅、氮化镓或任何其它半导体材料。LD 205安置在内插件202上。在一些实施例中，内插件202包含硅。内插件202可包含互连结构，例如多个导电迹线(例如重布层)、衬垫及/或通孔。内插件202通过粘着层203例如胶安置或附接到衬底201。在一些实施例中，衬底201是用于高可靠性应用的陶瓷衬底。
如上文所提及，在固化工艺期间，粘着层203的体积或形状可能改变，因为材料的分子键已经改变。因此，内插件202的倾斜、移位或旋转可能出现。在图2A中的光学系统200中，例如，倾斜公差预定为25μm，此意味内插件的左侧与内插件的右侧之间的高度差ΔT必须小于约25μm。或者，高度差ΔT通过内插件202的宽度乘以sin(θ2)来测量，其中θ2是内插件202相对于衬底201的倾斜角。假设内插件202的宽度W1为约10mm，内插件202的倾斜角θ2应低于约0.0143度。通过将LD 205安置在相对较大或较宽内插件202上且接着将内插件202附接到衬底201，LD 205相对于衬底201的第一表面201A的倾斜角θ2'变得比图1中的光学装置10的倾斜角θ1小得多，光学装置10运用相同粘着层直接附接到衬底101。LD 205与内插件202之间的相对倾斜相当有限，如稍后将在本公开的图3中论述。倾斜角θ2及θ2'的缩减可归因于相对较大或较宽内插件202，其具有因粘着层203在固化操作之后的体积变化而较不容易发生改变的定向。因此，内插件202的倾斜角θ2且因此LD 205的倾斜角θ2'实际上可能缩减。在一些实施例中，粘着层203包含可流动粘着剂，例如胶。在一些实施例中，粘着层203包含焊锡膏。
如上文所提及，LD的倾斜角θ2'是光学系统的关键问题中的一个，因为微小倾斜角可能引起相对较大光偏离。另外，在具有小裸片大小的高准确度惯性运动单元(IMU)中，控制裸片结合准确度具有挑战性。根据图2A中的一些实施例，通过将LD 205安置在相对较大或较宽内插件202上且接着将内插件202附接到衬底201，LD 205的倾斜角θ2'相较于未引入内插件202的状况可通过引入内插件202而缩减。缩减LD的倾斜角θ2'会增加IMU的准确度。
参考图2B，图2B是图2A的光学系统200的俯视图。从俯视图视角来看，安置于衬底201上方的内插件202具有第一区域A1。从俯视图视角来看，安置于内插件202上方的多个LD205中的每一个具有第二区域A2。第一区域A1大于第二区域A2。或者，从横截面视图视角来看，内插件202的宽度W1比LD 205的宽度W2宽。
图3是根据本公开的一些实施例的光学系统300的横截面视图。各种图已经简化以用于本公开的方面的较佳理解。
参考图3，内插件302经提供在衬底301上方。在一些实施例中，内插件302是硅内插件，红外光能透射通过所述硅内插件。内插件302可包含互连结构，例如多个导电迹线(例如重布层)、衬垫及/或通孔。在一些实施例中，保护层3021(例如钝化层、绝缘层或氧化层)安置在内插件2021上以覆盖内插件3021的顶面的一部分且暴露内插件3021上的电连接(例如导电衬垫)。在一些实施例中，导电衬垫可包含粘着层2071，例如钛(Ti)，及导电层207，例如金(Au)或例如金-锡(AuSn)的共晶化合物。
在一些实施例中，导电衬垫的导电层207可包含具有大于260摄氏度的共晶温度的其它共晶化合物。举例来说，金-锗(AuGe)、金-硅(AuSi)、铝-锗(AlGe)、铝-硅(AlSi)等等可用作导电层207。具有大于260摄氏度的共晶温度帮助防止导电层207在后续焊料回焊操作中熔融。
LD 305接着安置在内插件302上且电连接到内插件302。举例来说，LD 305的电接点与内插件302上的导电衬垫对准且电连接到所述导电衬垫。在一些实施例中，LD 305通过取放技术安置在内插件302上。在一些实施例中，LD 305的电接点可包含粘着层2073，例如钛(Ti)，势垒层2072，例如铂(Pt)或镍(Ni)，及导电层207，例如金(Au)或例如金-锡(AuSn)的共晶化合物。
在一些实施例中，电接点的导电层207可包含具有大于260摄氏度的共晶温度的其它共晶化合物。举例来说，金-锗(AuGe)、金-硅(AuSi)、铝-锗(AlGe)、铝-硅(AlSi)等等可用作导电层207。具有大于260摄氏度的共晶温度帮助防止导电层207在后续焊料回焊操作中熔融。
LD 305包含面朝向内插件302的p型电极305P及与p型电极305P相对的n型电极305N。在一些实施例中，p型电极305P是外延层且光从p型电极305P的边缘发射。通过放置具有面朝向内插件302的p型电极305P的LD 305，会更易于控制LD 305的位移、倾斜或旋转，因为外延层相较于LD的n型电极305N具有更佳表面粗糙度均一性。可以接受的是，归因于制造工艺中的薄化/研磨操作，LD 305的n型电极305N处的表面粗糙度均一性相对较小。
参考图3，LD 305的电接点通过例如激光焊接、熔合、熔融或其它适合的结合技术结合到内插件302上的对应的导电衬垫。举例来说，LD 305的电接点及内插件302上的导电衬垫形成或界定共晶结构。在一些实施例中，在取放操作之后通过将红外(IR)光源应用在LD 305与内插件302之间的导电层207处来实行激光焊接。IR光源经配置以传递通过硅内插件302而无大幅衰减(或被硅内插件302吸收)。通过使用激光焊接以形成用于LD 305与内插件302的共晶结合，避免了LD 305相对于内插件302的移位、旋转或倾斜。在一些实施例中，在LD 305结合到内插件302之后，内插件302附接到陶瓷衬底301以形成光学系统300。
在一些实施例中，归因于陶瓷衬底301的烧结表面，陶瓷衬底301的表面粗糙度大于内插件302的表面粗糙度。如果LD 305与陶瓷衬底301之间未堆叠内插件302，那么陶瓷衬底301的明显粗糙表面会引起尺寸与LD 305一样小的表面安装装置的不当倾斜、旋转或位移。此外，如先前所描述，无法应用激光焊接操作以结合LD 305与陶瓷衬底301，因为陶瓷衬底301会吸收IR光，即，IR光源不能透射通过陶瓷衬底301。
图4说明根据本公开的一些实施例的光学系统400的透视图。图4中的光学系统400包含衬底401、硅内插件406、主动组件402及403、被动组件404以及光源405。在一些实施例中，硅内插件406可包含互连结构，例如多个导电迹线(例如重布层)、衬垫及/或通孔。在一些实施例中，主动组件402及403可包含专用集成电路(ASIC)、场效应晶体管(FET)或其它组件。在一些实施例中，被动元件404可包含电阻器、电容器、电感器或其组合。在一些实施例中，光源405可包含LED、LD、VCSEL或其它光学组件，如上文所描述。在一些实施例中，光源405可安置在硅内插件406上以增加光源的高度。在一些实施例中，被动组件404或主动组件402及403中的一些也可安置在内插件406上，所述内插件接着由衬底401支撑。
参考图5，图5是展示覆盖图4中所说明的光学系统400的盖501的透视图。在一些实施例中，盖501是金属盖，其在盖501的侧表面上具有开口，从而防止光源405的光学路径被盖501遮挡。在一些实施例中，盖501为例如车载光学系统应用的高可靠性应用中的光学系统400提供额外稳固性。在一些实施例中，盖501为光学系统400的电子装置及光学装置提供电磁(EM)屏蔽。举例来说，与衬底401接触的盖501的边缘501E通过衬底401上的导电图案电接地。在一些实施例中，盖501的三个边缘501E与衬底401的导电图案接触。在一些实施例中，衬底401可由具有互连结构的陶瓷构成。
参考图6，图6是根据本公开的一些实施例的用于制造光学封装结构的操作流程。操作601包含提供内插件，所述内插件在前表面上具有至少一结合衬垫。操作603包含将光学装置放置在内插件的前表面上。光学装置具有由共晶合金构成的结合表面。操作605包含通过光源照明共晶合金以将光学装置结合到内插件。操作607包含通过结合层接合内插件与载体。图7到图11是在制造工艺期间的各种操作阶段的横截面视图或俯视图。
参考图7，图7展示内插件202及在内插件202的前表面202A上方的多个结合衬垫207B的横截面。在一些实施例中，内插件202包含互连结构(图7中未展示)，其具有内插件202内的导电金属线及导电通孔且暴露在内插件202的前表面202A处。保护层2021(例如钝化层、绝缘层或氧化层)安置在内插件的前表面202A上且暴露内插件202的互连结构；因此，互连结构与结合衬垫207B电连接。如图7中所展示，例如钛(Ti)的粘着层2071首先沉积于互连结构上方且接纳沉积于其上的导电衬垫或结合衬垫207B。如先前论述，导电衬垫或结合衬垫207B包含具有大于260摄氏度的共晶温度的共晶化合物。举例来说，金-锡(AuSn)、金-锗(AuGe)、金-硅(AuSi)、铝-锗(AlGe)、铝-硅(AlSi)等等可用作结合衬垫207B。具有大于260摄氏度的共晶温度帮助防止导电层207结合衬垫207B在后续焊料回焊操作中熔融。
参考图8，图8展示将光学装置或激光二极管(LD)205放置在内插件202的结合衬垫207B上的横截面。在一些实施例中，光学装置或LD 205通过具有多个光学对准的取放操作安置以最小化位移错误。一旦光学装置或激光二极管(LD)205定位于预定部位处，那么施加吸力以暂时固定光学装置或激光二极管(LD)205同时从内插件202的背侧202B照明光源以将光学装置或激光二极管(LD)205永久性地固定或焊接到结合衬垫207B，如将在图9中进一步论述。归因于取放操作中的多个对准及在焊接之前施加的吸力，光学装置或LD 205与内插件202之间的相对倾斜、旋转或位移相当有限且因此可被视为可忽略的。如图8中所展示，光学装置或激光二极管(LD)205可包含p型电极205P及与p型电极205P相对的n型电极205N。例如钛(Ti)的粘着层2073及例如铂(Pt)或镍(Ni)的势垒层安置于p型电极205P处。另外，先前所描述的例如共晶化合物的导电层2072安置于p型电极205P处。另外，导电层208也安置于n型电极205N处以用于后续形成接点。
参考图9，图9是用以将光学装置或激光二极管(LD)205永久性地固定到内插件202的结合衬垫207B的激光焊接操作的横截面视图。如图8中先前所展示，导电层207A及207B可由共晶合金构成，当例如红外(IR)激光的光源900在内插件202的背表面202B处照明时，导电层207A及207B的温度可升高以超过共晶合金的共晶温度。在一些实施例中，内插件202由不吸收IR光源的硅构成。举例来说，导电层207A及207B可由金-锡(AuSn)构成。当红外(IR)激光照明内插件202的背表面202B时，AuSn的温度可升高以超出280摄氏度的共晶温度，从而使得导电层207A及207B熔融。因此，当红外(IR)激光的功率缩减或断开时，导电层207A及207B或AuSn共晶合金会固化且变成相邻导电层207。
在其它实施例中，导电层207A及207B可包含具有大于260摄氏度的共晶温度的其它共晶合金，例如，金-锗(AuGe)、金-硅(AuSi)、铝-锗(AlGe)、铝-硅(AlSi)等等。光源900的功率经控制以将导电层207A及207B的温度升高到熔融对应的共晶合金的所要程度。
参考图10A及图10B，图10A是通过结合层203接合到衬底201的图9的光学封装结构的横截面视图。图10B是图10A的光学封装结构的俯视图。在图10A中，结合层203可以是胶层、聚合层或焊锡膏。内插件202通过取放操作安置于衬底201上方，之后为固化操作以固化结合层203。在图10A中，结合层203在内插件202的一个边缘202C处的厚度T1及结合层203在内插件202的相对边缘202D处的厚度T2大体上相同，从而展示内插件及光学装置或LD 205在结合层203的固化之后不会相对于衬底201倾斜。
然而，如图10B中所展示，从俯视图视角展示内插件202相对于衬底201的平面内旋转。归因于内插件202及对应的保护层2021的旋转，可观测到底层结合层203的一部分。在一些实施例中，内插件202相对于衬底201的平面内旋转低于1度。
参考图11，图11是通过结合层203接合到衬底201的图9的光学封装结构的横截面视图。结合层203可以是胶层、聚合层或焊锡膏。内插件202通过取放操作安置于衬底201上方，之后为固化操作以固化结合层203。在图11中，结合层203在内插件202的一个边缘202C处的厚度T1不同于结合层203在内插件202的相对边缘202D处的厚度T2，从而展示内插件及光学装置或LD 205在固化结合层203之后相对于衬底201倾斜。在一些实施例中，内插件202相对于衬底201的倾斜角θ2低于0.5度。如先前论述，光学装置或LD 205与内插件202之间的倾斜角相当有限且因此可被视为可忽略的。
参考图12，图12是根据本公开的一些实施例的用于制造光学封装结构的操作流程。在操作1201中，接纳单元级陶瓷衬底，之后为陶瓷重建以便形成互连结构，例如陶瓷衬底的前表面中及通过陶瓷衬底的前表面暴露的重布层。在操作1203中且参考图4，表面安装装置或被动装置402及404，例如电容器、电阻器、连接器或线圈，安装在陶瓷衬底401上方。在操作1205中，电子装置或主动装置403，例如专用集成电路(ASIC)、场效应晶体管(FET)或其它组件，结合到陶瓷衬底401。在一些实施例中，电子装置或主动装置形成于晶片级处且已经被粘贴、接地且锯切。取决于电子装置或主动装置安置在陶瓷衬底401上的方式，可在适合的地方应用焊料回焊或裸片结合固化。
在将被动及主动装置安置在陶瓷衬底401上方之后且在形成覆盖被动及主动装置的盖501之前，如图2中所展示且描述的光学系统200或如图4中所展示且描述的经焊接在内插件406上的光源405可安置于陶瓷衬底401的边缘上方。光学系统200在陶瓷衬底401上的位置不限于陶瓷衬底401的边缘，只要从光学装置205发射或由光学装置205接收的光学路径不被其它电子或光学组件遮挡即可。
参考图13，图13是根据本公开的一些实施例的用于制造光学封装结构的操作流程。在操作1301中，光学装置205与内插件202或陶瓷衬底201之间的电连接例如通过线结合操作建立。返回参考图11，导电层208安置于LD 205的光学装置的n型电极205N处。n型电极205N通过线结合操作通过导电层208线结合到内插件202上的接触衬垫(未展示)或陶瓷衬底201上的接触衬垫(未展示)。在操作1303中，安置在陶瓷衬底上的光学系统400及其它电子装置经检测以识别封装缺陷。一旦检测合格，那么图5中所描述的金属盖501通过粘着剂结合或焊料结合经定位以覆盖光学系统400。在粘着剂结合的状况下，粘着剂材料在附接盖501之后经施配在陶瓷衬底401的预定部位上，且粘着剂材料接着固化。在焊料结合的状况下，导电图案在附接盖501之后形成于陶瓷衬底401的预定部位处，且进行焊料回焊以电连接盖501与陶瓷衬底401。
前述内容概述本公开的若干实施例及详细方面的特征。本公开中所描述的实施例可易于用作设计或修改用于进行本文中引入的实施例的相同或类似目的及/或达成相同或类似优势的其它工艺及结构的基础。此类等效构造并不脱离本公开的精神及范围，且可在不脱离本公开的精神及范围的情况下进行各种改变、替代及更改。

Claims (26)

1.一种光学封装结构，其包括：
衬底，其具有第一表面；
内插件，其通过结合层结合到所述第一表面，从俯视图视角来看，所述内插件具有第一区域；
所述内插件上的光学装置，从所述俯视图视角来看，所述光学装置具有第二区域，其中所述第一区域大于所述第二区域，且
其中所述内插件具有第一端及相对所述第一端的第二端，所述结合层包括有位于所述内插件的所述第一端下方且具有第一厚度的第一部分，及位于所述内插件的所述第二端下方且具有第二厚度的第二部分，且所述第一厚度不同于所述第二厚度。
2.根据权利要求1所述的光学封装结构，其中所述结合层包括流动粘着剂或焊锡膏。
3.根据权利要求1所述的光学封装结构，其进一步包括在所述光学装置与所述内插件之间的共晶层。
4.根据权利要求3所述的光学封装结构，其中所述共晶层包括大于260摄氏度的共晶温度。
5.根据权利要求4所述的光学封装结构，其进一步包括在所述内插件与所述共晶层之间的保护层。
6.根据权利要求1所述的光学封装结构，其进一步包括电连接到所述衬底的多个电子装置。
7.根据权利要求1所述的光学封装结构，其中所述衬底由陶瓷构成。
8.根据权利要求1所述的光学封装结构，其中所述内插件由红外光能透射通过的材料构成。
9.根据权利要求1所述的光学封装结构，其中所述内插件包括包含互连结构。
10.根据权利要求1所述的光学封装结构，其中，从横截面视图视角来看，所述内插件的宽度比所述光学装置的宽度宽。
11.根据权利要求1所述的光学封装结构，其中所述内插件相对于所述衬底的倾斜角低于0.0143度。
12.一种光学模块，其包括：
陶瓷衬底；
所述陶瓷衬底上的硅内插件；
在所述陶瓷衬底与所述硅内插件之间的结合层；及
光学装置，其安置在所述硅内插件上且电连接到所述硅内插件，
其中，从俯视图视角来看，所述硅内插件具有第一区域且所述光学装置具有第二区域，其中所述第一区域大于所述第二区域，且
其中所述结合层在所述硅内插件的一个端部处包括第一厚度且在所述硅内插件的相对端部处包括第二厚度，所述第一厚度不同于所述第二厚度。
13.根据权利要求12所述的光学模块，其中所述结合层包括流动粘着剂或焊锡膏。
14.根据权利要求12所述的光学模块，其进一步包括：
在所述硅内插件与所述光学装置之间的共晶层；及
在所述共晶层与所述光学装置之间的钛层。
15.根据权利要求14所述的光学模块，其中所述共晶层包括AuSn、AuGe、AuSi、AlGe或AlSi。
16.根据权利要求12所述的光学模块，其中所述光学装置包括光发射器或光接收器。
17.根据权利要求12所述的光学模块，其进一步包括所述陶瓷衬底上的电气装置。
18.根据权利要求17所述的光学模块，其进一步包括覆盖所述光学装置及所述电气装置的金属盖，其中所述金属盖电连接到所述陶瓷衬底。
19.根据权利要求12所述的光学模块，其中所述硅内插件包括包含互连结构。
20.根据权利要求12所述的光学模块，其中，从横截面视图视角来看，所述硅内插件的宽度比所述光学装置的宽度宽。
21.根据权利要求12所述的光学模块，其中所述硅内插件相对于所述陶瓷衬底的倾斜角低于0.0143度。
22.一种用于制造光学封装结构的方法，其包括：
提供内插件，所述内插件在前表面上具有结合衬垫；
将光学装置放置在所述内插件的所述前表面上，所述光学装置具有具共晶合金的结合表面，其中，从俯视图视角来看，所述内插件具有第一区域且所述光学装置具有第二区域，其中所述第一区域大于所述第二区域；
通过光源照明所述共晶合金以将所述光学装置结合到所述内插件；及
通过结合层接合所述内插件与衬底，其中所述结合层在所述内插件的一个端部处包括第一厚度且在所述内插件的相对端部处包括第二厚度，所述第一厚度不同于所述第二厚度。
23.根据权利要求22所述的方法，其中所述放置所述光学装置包括取放操作，之后为运用红外光源照明所述共晶合金。
24.根据权利要求22所述的方法，其进一步包括固化所述结合层以将所述内插件结合到所述衬底。
25.根据权利要求22所述的方法，其中所述光源从与所述内插件的所述前表面相对的背表面照明所述共晶合金。
26.根据权利要求22所述的方法，其进一步包括在将所述内插件接合到所述衬底之前将多个电子装置放置在所述衬底上。
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