CN109545890A - 晶体硅表面倒金字塔的制备方法 - Google Patents
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Abstract
本发明涉及微电子纳米加工领域,尤其涉及一种晶体硅表面倒金字塔的制备方法。该方法包括以下步骤:首先在晶体硅表面通过纳米压印技术制作周期性排列的光刻胶图形,然后将该晶体硅片置于RIE刻蚀设备中。通过调节RIE设备的工艺参数,对晶体硅表面进行刻蚀,形成所需要的倒金字塔绒面结构。此方法制备快速,能够大大增加光的吸收率,从而提高光电转换效率。
Description
技术领域
本发明涉及一种晶体硅表面倒金字塔,尤其涉及一种晶体硅表面倒金字塔的制备方法。
背景技术
在晶体硅太阳能电池的制作过程中,通过在硅片表面制作金字塔或者坑状绒面降低光的反射率,提高短路电流,从而提高电池的转换效率。
目前商业化单晶硅绒面的制备是利用碱性溶液对硅的各项异性腐蚀原理,将硅片浸泡在加热的碱性溶液中,制备出正向金字塔绒面;商业化多晶硅绒面的制备是将硅片浸泡在氢氟酸和硝酸的混合溶液中,利用混合酸液对晶体硅的腐蚀,制作出坑状绒面。
专利号CN108054224A,包括如下步骤: (1) 将硅片放入含有金属离子的溶液中浸泡,使硅片表面涂覆一层金属纳米颗粒; 所述溶液中金属离子浓度大于1E-3 mol/L,且HF的浓度大于1E-2 mol/L; (2) 用第一化学腐蚀液腐蚀硅片表面,形成纳米线或多孔硅结构;温度为25 ~ 90℃,时 间为2 ~ 10 min; 所述第一化学腐蚀液为HF和氧化剂的混合溶液;其中,HF的浓度为1 ~ 15 mol/L,氧化剂 的浓度为0 .05 ~ 0 .5 mol/L; (3) 将上述硅片放入第二化学腐蚀液中进行修正腐蚀,使上述纳米线或多孔硅结构形 成正金字塔的微结构; 所述第二化学腐蚀液为碱液; 所述碱液的浓度为0 .001 ~ 0 .1 mol/L,反应时间为10 ~ 1000秒,反应温度为5 ~ 85℃。由于溶液对硅片表面的腐蚀受到硅片表面损伤、溶液温度、浓度、硅片反应产生的气泡、反应残留的副产品等多种因素的影响,通过这种方式制备的绒面并不均匀,其中单晶硅绒面金字塔大小不一,多晶硅绒面腐蚀坑的形状不规则,坑的排列具有随意性,以上原因导致绒面的陷光效果不理想,对光的利用不够充分,从而影响了电池效率的提升。
发明内容
本发明旨在解决上述缺陷,提供一种晶体硅表面倒金字塔的制备方法。
为了克服背景技术中存在的缺陷,本发明解决其技术问题所采用的技术方案是:这种晶体硅表面倒金字塔的制备方法,该制备方法包括,
第一步、硅片表面制作特定图形:将光刻胶采用真空喷涂的方式均匀喷涂在硅片表面;
第二步、刻蚀图形:将该晶体硅片置于RIE刻蚀设备中,选用SF6为刻蚀气体并设定具体的工艺参数,刻蚀速率:0.5-3um/min,SF6流量:20-50 sccm,气体压强:10-30Pa,射频功率:200-500W。
根据本发明的另一个实施例,进一步包括所述光刻胶的粘度为5-10cps。
根据本发明的另一个实施例,进一步包括所述光刻胶喷涂的厚度为1.3um。
根据本发明的另一个实施例,进一步包括所述表面刻蚀图形呈倒金字塔,开口尺寸范围为1-5um,深度为1-5um。
本发明的有益效果是:通过本发明制备方法制备的晶体硅绒面,具有表面凹坑形状可控,大小均一,排列规则等优点,绒面的陷光效果好,能有效降低反射率,提升短路电流,从而提高电池的转换效率。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明刻蚀的倒金字塔绒面结构示意图。
具体实施方式
这种晶体硅表面倒金字塔的制备方法,使用光刻胶作为掩膜材料,将光刻胶涂覆在硅片表面,并进行纳米压印的同时对光刻胶进行曝光显影,在光刻胶上制备出特定图形,然后将硅片放入RIE设备进行干法刻蚀,在硅片表面形成具有特定大小和规则排列的坑状绒面,从而提高硅片表面的陷光效果。
该制备方法包括,
第一步、硅片表面制作特定图形:将光刻胶采用真空喷涂的方式均匀喷涂在硅片表面;
第二步、刻蚀图形:将该晶体硅片置于RIE刻蚀设备中,选用SF6为刻蚀气体并设定具体的工艺参数,刻蚀速率:0.5-3um/min,SF6流量:20-50 sccm,气体压强:10-30Pa,射频功率:200-500W。
优选例
光刻胶的粘度为5-10cps,可加热紫外固化。
优选例
光刻胶喷涂的厚度为1.3um。该厚度取决于我们设计的图形模板尺寸,模板图形直径设计为1um的周期性排列六边形,喷涂胶厚度的选定是匹配于图形模板,按本例来说残留胶厚度为1.3-1=0.3um,保证模板下压之后残留胶在0~0.5um之间。由于光刻胶具有较强的抗蚀性,如果太厚会导致刻蚀时间长,影响刻蚀效率。
优选例
表面刻蚀图形呈倒金字塔,开口尺寸范围为1-5um,深度为1-5um。
实施例1
第一步,硅片表面制作特定图形:将粘度为6cps的光刻胶采用真空喷涂的方式均匀喷涂在硅片表面,厚度为1.3um,然后采用纳米压印技术制作周期性排列的光刻胶图形。
第二步,刻蚀图形:将该晶体硅片置于RIE刻蚀设备中,选用SF6为刻蚀气体,设定具体的工艺参数,刻蚀速率:0.5 um/min,SF6流量:25 sccm,气体压强:15Pa,射频功率:300W。刻蚀出大小均匀的倒金字塔绒面结构,如图1所示。
实施例2
第一步,硅片表面制作特定图形:将粘度为8cps的光刻胶采用真空喷涂的方式均匀喷涂在硅片表面,厚度为1.1um,然后采用纳米压印技术制作周期性排列的光刻胶图形。
第二步,刻蚀图形:将该晶体硅片置于RIE刻蚀设备中,选用SF6为刻蚀气体,设定具体的工艺参数,刻蚀速率:1 um/min,SF6流量:35 sccm,气体压强:20Pa,射频功率:300W。刻蚀出大小均匀的倒金字塔绒面结构,如图1所示。
Claims (4)
1.一种晶体硅表面倒金字塔的制备方法,其特征在于:
该制备方法包括,
第一步、硅片表面制作特定图形:将光刻胶采用真空喷涂的方式均匀喷涂在硅片表面;
第二步、刻蚀图形:将该晶体硅片置于RIE刻蚀设备中,选用SF6为刻蚀气体并设定具体的工艺参数,刻蚀速率:0.5-3um/min,SF6流量:20-50 sccm,气体压强:10-30Pa,射频功率:200-500W。
2.如权利要求1所述的晶体硅表面倒金字塔的制备方法,其特征在于:所述光刻胶的粘度为5-10cps。
3.如权利要求1所述的晶体硅表面倒金字塔的制备方法,其特征在于:所述光刻胶喷涂的厚度为1.3um。
4.如权利要求1所述的晶体硅表面倒金字塔的制备方法,其特征在于:所述表面刻蚀图形呈倒金字塔,开口尺寸范围为1-5um,深度为1-5um。
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Citations (3)
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CN201796900U (zh) * | 2010-09-29 | 2011-04-13 | 常州天合光能有限公司 | 用于太阳能电池表面rie制绒的硅片 |
CN103094371A (zh) * | 2013-01-21 | 2013-05-08 | 西安交通大学苏州研究院 | 一种多晶硅绒面结构及其制绒方法 |
CN103579416A (zh) * | 2013-11-06 | 2014-02-12 | 无锡英普林纳米科技有限公司 | 一种具有倒金字塔结构模板的制备方法 |
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CN201796900U (zh) * | 2010-09-29 | 2011-04-13 | 常州天合光能有限公司 | 用于太阳能电池表面rie制绒的硅片 |
CN103094371A (zh) * | 2013-01-21 | 2013-05-08 | 西安交通大学苏州研究院 | 一种多晶硅绒面结构及其制绒方法 |
CN103579416A (zh) * | 2013-11-06 | 2014-02-12 | 无锡英普林纳米科技有限公司 | 一种具有倒金字塔结构模板的制备方法 |
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