TWI599060B - Suede structure of a crystalline silicon solar cell and its preparation method - Google Patents
Suede structure of a crystalline silicon solar cell and its preparation method Download PDFInfo
- Publication number
- TWI599060B TWI599060B TW105114542A TW105114542A TWI599060B TW I599060 B TWI599060 B TW I599060B TW 105114542 A TW105114542 A TW 105114542A TW 105114542 A TW105114542 A TW 105114542A TW I599060 B TWI599060 B TW I599060B
- Authority
- TW
- Taiwan
- Prior art keywords
- solution
- concentration
- microstructure
- hydrofluoric acid
- mol
- Prior art date
Links
- 238000002360 preparation method Methods 0.000 title claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 title 1
- 239000000243 solution Substances 0.000 claims description 116
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 95
- 238000004140 cleaning Methods 0.000 claims description 58
- 238000003486 chemical etching Methods 0.000 claims description 45
- 229910021645 metal ion Inorganic materials 0.000 claims description 42
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 30
- 229910052707 ruthenium Inorganic materials 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 229910052732 germanium Inorganic materials 0.000 claims description 22
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 22
- 239000007800 oxidant agent Substances 0.000 claims description 21
- 239000002070 nanowire Substances 0.000 claims description 20
- 230000007797 corrosion Effects 0.000 claims description 18
- 238000005260 corrosion Methods 0.000 claims description 18
- 230000035484 reaction time Effects 0.000 claims description 16
- 239000011259 mixed solution Substances 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 7
- 239000002082 metal nanoparticle Substances 0.000 claims description 6
- 239000002923 metal particle Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000002242 deionisation method Methods 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 17
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000009776 industrial production Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- -1 silver ions Chemical class 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Description
本發明涉及一種晶體矽太陽能電池的絨面結構及其製備方法,屬於太陽能電池技術領域。
隨著太陽能電池元件的廣泛應用,光伏發電在新能源中越來越佔有重要比例,獲得了飛速發展。目前商業化的太陽電池產品中,晶體矽(單晶和多晶)太陽電池的市場份額最大,一直保持85%以上的市場估有率。
目前,在太陽電池的生產工藝中,矽片表面的絨面結構可以有效地降低太陽電池的表面反射率,是影響太陽電池光電轉換效率的重要因素之一。為了在晶體矽太陽能電池表面獲得好的絨面結構,以達到較好的減反射效果,人們嘗試了許多方法,常用的包括機械刻槽法、鐳射刻蝕法、反應離子刻蝕法(RIE)、化學腐蝕法(即濕法腐蝕)等。其中,機械刻槽方法可以得到較低的表面反射率,但是該方法造成矽片表面的機械損傷比較嚴重,而且其成品率相對較低,故而在工業生產中使用較少。對於鐳射刻蝕法,是用鐳射製作不同的刻槽花樣,條紋狀和倒金字塔形狀的表面都已經被製作出來,其反射率可以低至8.3%,但是由其制得的電池的效率都比較低,不能有效地用於生產。RIE方法可以利用不同的模版來進行刻蝕,刻蝕一般是乾式刻蝕,可以在矽片表面形成所謂的“黑矽”結構,其反射率可以低至7.9%,甚至可以達到4%,但是由於設備昂貴,生產成本較高,因此在工業成產中使用較少。而化學腐蝕法具有工藝簡單、廉價優質、和現有工藝好相容等特點,成為了現有工業中使用最多的方法。
目前,採用濕法腐蝕的晶體矽太陽能電池的絨面結構一般呈微米級。目前的常規做法仍是進一步降低其表面反射率。發明專利申請WO2014120830(A1)公開了一種晶體矽奈米絨面的製備方法,通過退火的方式來實現奈米絨面形貌的控制,但是該方法工藝複雜,不利於工業化生產的需要。
因此,開發一種新的晶體矽太陽能電池的絨面結構,進一步降低絨面結構的表面反射率,提高電池片轉換效率,並進一步簡化工藝流程顯然是本領域的研發方向之一。
本發明的發明目的是提供一種晶體矽太陽能電池的絨面結構及其製備方法。
為達到上述發明目的,本發明採用的技術方案是:一種晶體矽太陽能電池的絨面結構,所述絨面結構包含複數個類似倒金字塔的微結構;所述類似倒金字塔的微結構的下部為倒稜錐結構,其上部為倒圓台結構;所述類似倒金字塔的微結構的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種。
上文中,所述類似倒金字塔的微結構的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種,其中,由多條曲線圍成的閉合圖形,其至少包括3條曲線,當然也可以由更多的曲線圍成,優選5~8條。所述倒圓錐結構的頂部是指圓錐的底面,由於其是倒立的,因此圓錐的底面成為了微結構的頂部。
所述絨面結構包含複數個類似倒金字塔的微結構,這些類似倒金字塔結構可以是獨立的分散於矽片表面,也可以部分重疊,或多個倒圓錐結構相互部分重疊。
所述類似倒金字塔的微結構的深度為100~900奈米(nm)。所述絨面結構的平均反射率為2~20%。優選5~15%。
所述絨面上微結構的分佈密度為109~1012個/平方米(cm2)。
上述技術方案中,所述類似倒金字塔的微結構的尺寸為100~900nm。
上述技術方案中,所述絨面結構還包含複數個正金字塔的微結構。即絨面結構是包含類似倒金字塔的微結構和正金字塔的微結構的兩種微結構,且類似倒金字塔的微結構占多數。
本發明同時請求保護一種晶體矽太陽能電池的絨面結構的製備方法,包括如下步驟:
(1)將矽片放入含有金屬離子的溶液中浸泡,使矽片表面塗覆一層金屬奈米顆粒;所述溶液中金屬離子濃度小於等於1E-3莫耳/升(mol/L),或者,溶液中金屬離子濃度大於1E-3mol/L的同時,混合氫氟酸(HF酸)的濃度小於等於1E-2mol/L。
(2)用第一化學腐蝕液腐蝕矽片表面,形成奈米線或多孔矽結構;溫度為25~90℃,時間為2~10分(min);所述第一化學腐蝕液為氫氟酸和氧化劑的混合溶液;其中,氫氟酸的濃度為1~15mol/L,氧化劑的濃度為0.05~0.5mol/L;所述氧化劑可從H2O2、HNO3或H2CrO4中選擇。
(3)將上述矽片放入第二化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構形成奈米深孔結構;所述第二化學腐蝕液為氧化劑與氫氟
酸的混合溶液;氫氟酸與氧化劑的濃度分別為0.05~0.5mol/L、1~10mol/L,反應時間為10~1000秒,反應溫度為5~45℃。
(4)將上述矽片放入第三化學腐蝕液中進行修正腐蝕,使上述奈米深孔結構形成類似倒金字塔的微結構;所述類似倒金字塔的微結構的下部為倒稜錐結構,其上部為倒圓台結構;所述類似倒金字塔的微結構的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種;所述第三化學腐蝕液為鹼液;所述鹼液的濃度為0.001~0.1mol/L,反應時間為10~1000秒,反應溫度為5~85℃。所述鹼液選自以下溶液中的一種:NaOH溶液、KOH溶液、四甲基氫氧化銨溶液。
上文中,所述金屬離子可從現有技術的金屬離子中選用,比如金、銀、銅、鎳中的一種或幾種。
所述步驟(1)中溶液中金屬離子濃度小於等於1E-3mol/L,或者,溶液中金屬離子濃度大於1E-3mol/L的同時,混合氫氟酸的濃度小於等於1E-2mol/L;這是為了使相鄰兩個金屬奈米顆粒的間距大於奈米顆粒尺寸的2倍。從而形成上述類似倒金字塔的微結構。
上文中,所述步驟(1)中,浸泡時間為10~1000秒,溶液溫度為5~85℃。所述步驟(3)的腐蝕時間為30~3000秒,反應溫度為5~45℃。上述方法形成的絨面結構包含複數個類似倒金字塔的微結構,這些微結構可以是獨立的分散於矽片表面,也可以部分重疊,或多個倒圓錐結構相互部分重疊。
上述制絨方法屬於二步制絨法。
上述技術方案中,所述步驟(1)中含有金屬離子的溶液中還包含氫氟酸。
上述技術方案中,所述步驟(4)之後還包括去除金屬離子的步驟,具體如下:
分別用第一清洗液、第二清洗液、去離子水清洗上述矽片,去除金屬顆粒;所述第一清洗液為品質百分比為27~69%的硝酸溶液,清洗時間為60~1200秒,清洗溫度為5~85℃;所述第二清洗液為品質百分比為1~10%的氫氟酸溶液,清洗時間為60~600秒,清洗溫度為5~45℃。
與之相應的另一種技術方案,一種晶體矽太陽能電池的絨面結構的製備方法,包括如下步驟:
(1)將矽片放入含有氧化劑以及金屬鹽的氫氟酸溶液中,形成奈米線或多孔矽結構;溫度為25~90℃,時間為2~10min;所述溶液中金屬離子濃度小於等於1E-3mol/L,或者,溶液中金屬離子濃度大於1E-3mol/L的同時,混合氫氟酸的濃度小於等於1E-2mol/L。
(2)將上述矽片放入第一化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構形成奈米深孔結構;所述第一化學腐蝕液為氧化劑與氫氟酸的混合溶液;氫氟酸與氧化劑的濃度分別為0.05~0.5mol/L、1~10mol/L,反應時間為10~1000秒,反應溫度為5~45℃。
(3)將上述矽片放入第二化學腐蝕液中進行修正腐蝕,使上述奈米深孔結構形成類似倒金字塔的微結構;所述類似倒金字塔的微結構的下部為倒稜錐結構,其上部為倒圓台結構;所述類似倒金字塔的微結構的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種;所述第二化學腐蝕液為鹼液;所述鹼液的濃度為0.001~0.1mol/L,反應時間為10~1000秒,反應溫度為5~85℃。
上述制絨方法屬於一步制絨法。所述四甲基氫氧化銨溶液也稱為TMAH溶液。
所述金屬離子可從現有技術的金屬離子中選用,比如金、銀、銅、鎳中的一種或幾種。
上述技術方案中,所述修正步驟之前或之後之後還包括去金屬離子的步驟,具體如下:分別用第一清洗液、第二清洗液、去離子水清洗上述矽片,去除金屬顆粒;所述第一清洗液為品質百分比為27~69%的硝酸溶液,清洗時間為60~1200秒,清洗溫度為5~85℃;所述第二清洗液為品質百分比為1~10%的氫氟酸溶液,清洗時間為60~600秒,清洗溫度為5~45℃。
與上述類似倒金字塔的微結構相對應的,本發明另一種技術方案為:一種晶體矽太陽能電池的絨面結構,所述絨面結構包含複數個正金字塔的微結構;所述正金字塔的尺寸為100~500nm。
上述技術方案中,所述絨面結構還包含複數個類似倒金字塔的微結構,且正金字塔的微結構占多數;所述類似倒金字塔的微結構的下部為倒稜錐結構,其上部為倒圓台結構;所述類似倒金字塔的微結構的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種。
即上述方案也是兩種微結構的組合。只是以正金字塔微結構為主。
上述晶體矽太陽能電池的絨面結構的製備方法,包括如下步驟:
(1)將矽片放入含有金屬離子的溶液中浸泡,使矽片表面塗覆一層金屬奈米顆粒;所述溶液中金屬離子濃度大於1E-3mol/L,且氫氟酸的濃度大於1E-2mol/L。
(2)用第一化學腐蝕液腐蝕矽片表面,形成奈米線或多孔矽結構;溫度為25~90℃,時間為2~10min;所述第一化學腐蝕液為氫氟酸和氧化劑
的混合溶液;其中,氫氟酸的濃度為1~15mol/L,氧化劑的濃度為0.05~0.5mol/L。
(3)將上述矽片放入第二化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構形成正金字塔的微結構;所述第三化學腐蝕液為鹼液;所述鹼液的濃度為0.001~0.1mol/L,反應時間為10~1000秒,反應溫度為5~85℃。
上文中,所述步驟(1)中溶液中金屬離子濃度大於1E-3mol/L,且氫氟酸的濃度大於1E-2mol/L;這是為了使相鄰兩個金屬奈米顆粒的間距小於奈米顆粒尺寸的2倍,從而形成正金字塔微結構。
上述制絨方法屬於二步制絨法。
所述金屬離子可從現有技術的金屬離子中選用,比如金、銀、銅、鎳中的一種或幾種。
上述技術方案中,所述修正步驟之前或之後還包括去金屬離子的步驟,分別用第一清洗液、第二清洗液、去離子水清洗上述矽片,去除金屬顆粒;所述第一清洗液為品質百分比為27~69%的硝酸溶液,清洗時間為60~1200秒,清洗溫度為5~85℃;所述第二清洗液為品質百分比為1~10%的氫氟酸溶液,清洗時間為60~600秒,清洗溫度為5~45℃。
上述技術方案中,所述步驟(1)中含有金屬離子的溶液中還包含氫氟酸。
與之相應的另一種技術方案:一種晶體矽太陽能電池的絨面結構的製備方法,包括如下步驟:
(1)將矽片放入含有氧化劑以及金屬鹽的氫氟酸溶液中,形成奈米線或多孔矽結構;溫度為25~90℃,時間為2~10min;所述溶液中金屬離子濃度大於1E-3mol/L,且氫氟酸的濃度大於1E-2mol/L。
(2)將上述矽片放入第一化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構形成正金字塔的微結構;所述第一化學腐蝕液為鹼液;所述鹼液的濃度為0.001~0.1mol/L,反應時間為10~1000秒,反應溫度為5~85℃。
上述技術方案中,所述修正步驟之前或之後還包括去金屬離子的步驟,分別用第一清洗液、第二清洗液、去離子水清洗上述矽片,去除金屬顆粒;所述第一清洗液為品質百分比為27~69%的硝酸溶液,清洗時間為60~1200秒,清洗溫度為5~85℃;所述第二清洗液為品質百分比為1~10%的氫氟酸溶液,清洗時間為60~600秒,清洗溫度為5~45℃。
由於上述技術方案運用,本發明與現有技術相比具有下列優點:
1、本發明開發了一種新的晶體矽太陽能電池的絨面結構,在矽片表面形成緊密且均勻排布的類倒金字塔結構和正金字塔結構,且這些金字塔結構都是奈米級的;實驗證明:本發明的絨面結構可以有效降低前表面的反射率,使反射率最低降低至2%;此外,相對于發明專利申請WO2014120830(A1)公開的絨面結構,本發明的電池片的轉換效率可提高0.25~0.4%左右,取得了意想不到的效果。
2、本發明開發的一種控制奈米絨面形貌的方法可適用於所有金屬催化刻蝕方法形成的奈米絨面,並且通過藥液濃度的控制即可簡單控制金字塔形貌,不需要如WO2014120830(A1)中所述採用退火的方式來控制奈米絨面的形貌,工藝簡單,更適宜工業化生產。
3、本發明採用化學腐蝕形成奈米級絨面,無需掩膜刻蝕,操作工藝簡單,與現有工業化生產工藝相容性較好,可以快速移植到工業化生產中,適於推廣應用。
1‧‧‧矽片
2‧‧‧多孔矽結構
3‧‧‧奈米深孔結構
4‧‧‧倒金字塔的微結構
4A‧‧‧倒稜錐結構
4B‧‧‧倒圓台結構
5‧‧‧正金字塔結構
6‧‧‧金屬離子
圖1是本發明實施例一中多晶矽矽片絨面的SEM掃描圖。
圖2是本發明實施例二中多晶矽矽片絨面的SEM掃描圖。
圖3是本發明實施一中多晶矽矽片絨面形成原理的示意圖。
圖4是本發明實施二中多晶矽矽片絨面形成原理的示意圖。
下面結合實施例對本發明進一步描述。
實施例一:
參見「圖3」所示,一種多晶矽太陽能電池的絨面結構的製備方法,由如下步驟組成:
(1)將矽片1進行清洗、去除表面損傷層。
(2)將上述矽片1放入含有金屬離子6的化學腐蝕液中,在矽片1表面形成奈米線或多孔矽結構2;溫度為30℃,時間為2分鐘(min);所述金屬離子6選自銀離子;所述化學腐蝕液選自氫氟酸與H2O2(過氧化氫)的混合溶液;其中,氫氟酸的濃度為10mol/L,H2O2的濃度為0.4mol/L,所述步驟(2)中的金屬離子6的濃度為5E-4mol/L。
(3)將上述矽片1放入第一化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構2形成奈米深孔結構3;所述第一化學腐蝕液為HNO3(硝
酸)與氫氟酸的混台溶液;氫氟酸與HNO3的濃度分別為0.5mol/L、10mol/L,反應時間為20秒,反應溫度為常溫。
(4)將上述矽片1放入第二化學腐蝕液中進行修正腐蝕,使上述奈米深孔結構3形成奈米級的類似倒金字塔的微結構4;所述類似倒金字塔的微結構4的下部為倒稜錐結構4A,其上部為倒圓台結構4B;所述類似倒金字塔的微結構4的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種;所述第二化學腐蝕液選自四甲基氫氧化銨溶液;其濃度為0.1mol/L,反應時間為100秒,反應溫度為常溫。
(5)清洗、甩幹,即可得到所述晶體矽太陽能電池的絨面結構。
所述步驟(5)中的清洗具體如下:分別用第一清洗液、第二清洗液、去離子水清洗上述矽片1,去除金屬顆粒6;所述第一清洗液為品質百分比為69%的硝酸溶液,清洗時間為1200秒,清洗溫度為常溫;所述第二清洗液為品質百分比為10%的氫氟酸溶液,清洗時間為600秒,清洗溫度為常溫。
得到的多晶矽矽片絨面的SEM掃描圖參見「圖1」所示,尺寸為400nm左右的奈米類似倒金字塔的微結構4。所述類似倒金字塔的微結構4的下部為倒稜錐結構4A,其上部為倒圓台結構4B;所述類似倒金字塔的微結構4的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種。
實施例二:
參見「圖4」所示,一種多晶矽太陽能電池的絨面結構的製備方法,由如下步驟組成:
(1)將矽片1進行清洗、去除表面損傷層。
(2)將上述矽片1放入含有金屬離子6的化學腐蝕液中,在矽片1表面形成奈米線或多孔矽結構2;溫度為30℃,時間為2min;所述金屬離子6選自銀離子。
所述化學腐蝕液選自氫氟酸與H2O2的混合溶液;其中,氫氟酸的濃度為10mol/L,H2O2的濃度為0.4mol/L,所述步驟(2)中的金屬離子的濃度為0.1mol/L。
(3)將上述矽片1放入第一化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構2形成奈米深孔結構3;所述第一化學腐蝕液為HNO3與氫氟酸的混合溶液;氫氟酸與HNO3的濃度分別為0.01mol/L、10mol/L,反應時間為10秒,反應溫度為常溫。
(4)將上述矽片1放入第二化學腐蝕液中進行修正腐蝕,使上述奈米深孔結構形2成正金字塔結構5;所述第二化學腐蝕液選自四甲基氫氧化銨溶液;其濃度為0.01mol/L,反應時間為60秒,反應溫度為45℃。
(5)清洗、甩幹,即可得到所述晶體矽太陽能電池的絨面結構。所述步驟(5)中的清洗具體如下:
分別用第一清洗液、第二清洗液、去離子水清洗上述矽片1,金屬離子6。
所述第一清洗液為品質百分比為69%的硝酸溶液,清洗時間為1200秒,清洗溫度為80℃;所述第二清洗液為品質百分比為10%的氫氟酸溶液,清洗時間為600秒,清洗溫度為40℃。
得到的多晶矽矽片絨面的SEM掃描圖參見「圖2」所示,尺寸為400nm左右的奈米正金字塔結構5。
對比例一
採用與實施例相同的原料,按照發明專利申請WO2014120830(A1)公開的方法製備奈米絨面結構。
按照現有技術製成電池片,其轉換效率的對比結果如下:
由上可見,相對于發明專利申請WO2014120830(A1)公開的絨面結構(對比例),本發明的電池片的轉換效率可提高0.25~0.4%左右,取得了意想不到的效果。
1‧‧‧矽片
2‧‧‧多孔矽結構
3‧‧‧奈米深孔結構
4‧‧‧倒金字塔的微結構
4A‧‧‧倒稜錐結構
4B‧‧‧倒圓台結構
6‧‧‧金屬離子
Claims (11)
- 一種晶體矽太陽能電池的絨面結構,其特徵在於:所述絨面結構包含複數個類似倒金字塔的微結構;所述類似倒金字塔的微結構的下部為倒稜錐結構,其上部為倒圓台結構;所述類似倒金字塔的微結構的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種。
- 根據權利要求1所述的晶體矽太陽能電池的絨面結構,其中所述類似倒金字塔的微結構的尺寸為100~900奈米。
- 根據權利要求1所述的晶體矽太陽能電池的絨面結構,其中所述絨面結構更包含複數個正金字塔的微結構,且類似倒金字塔的微結構占多數。
- 一種晶體矽太陽能電池的絨面結構的製備方法,其特徵在於,包括如下步驟:(1)將矽片放入含有金屬離子的溶液中浸泡,使矽片表面塗覆一層金屬奈米顆粒;所述溶液中金屬離子濃度小於等於1E-3莫耳/升,或者,溶液中金屬離子濃度大於1E-3莫耳/升的同時氫氟酸的濃度小於等於1E-2莫耳/升;(2)用第一化學腐蝕液腐蝕矽片表面,形成奈米線或多孔矽結構;溫度為25~90℃,時間為2~10分;所述第一化學腐蝕液為氫氟酸和氧化劑的混合溶液;其中,氫氟酸的濃度為1~15莫耳/升,氧化劑的濃度為0.05~0.5莫耳/升;(3)將上述矽片放入第二化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構形成奈米深孔結構;所述第二化學腐蝕液為氧化劑與 氫氟酸的混合溶液;氫氟酸與氧化劑的濃度分別為0.05~0.5莫耳/升、1~10莫耳/升,反應時間為10~1000秒,反應溫度為5~45℃;(4)將上述矽片放入第三化學腐蝕液中進行修正腐蝕,使上述奈米深孔結構形成類似倒金字塔的微結構;所述類似倒金字塔的微結構的下部為倒稜錐結構,其上部為倒圓台結構;所述類似倒金字塔的微結構的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種;所述第三化學腐蝕液為鹼液;所述鹼液的濃度為0.001~0.1莫耳/升,反應時間為10~1000秒,反應溫度為5~85℃。
- 根據權利要求4所述的製備方法,其中所述步驟(1)中含有金屬離子的溶液中還包含氫氟酸。
- 一種晶體矽太陽能電池的絨面結構的製備方法,其特徵在於,包括如下步驟:(1)將矽片放入含有氧化劑以及金屬鹽的氫氟酸溶液中,形成奈米線或多孔矽結構;溫度為25~90℃,時間為2~10分;所述溶液中金屬離子濃度小於等於1E-3莫耳/升,或者,溶液中金屬離子濃度大於1E-3莫耳/升的同時,混合氫氟酸的濃度小於等於1E-2莫耳/升;(2)將上述矽片放入第一化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構形成奈米深孔結構;所述第一化學腐蝕液為氧化劑與氫氟酸的混合溶液;氫氟酸與氧化劑的濃度分別為0.05~0.5莫耳/升、1~10莫耳/升,反應時間為10~1000秒,反應溫度為5~45℃;(3)將上述矽片放入第二化學腐蝕液中進行修正腐蝕,使上述奈米深孔結構形成類似倒金字塔的微結構;所述類似倒金字塔的微結構的下部為倒稜錐結構,其上部為倒圓台結構;所述類似倒金字塔的微 結構的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種;所述第二化學腐蝕液為鹼液;所述鹼液的濃度為0.001~0.1莫耳/升,反應時間為10~1000秒,反應溫度為5~85℃。
- 一種晶體矽太陽能電池的絨面結構,其特徵在於:所述絨面結構包含複數個正金字塔的微結構;所述正金字塔的尺寸為100~500奈米;所述絨面結構還包含複數個類似倒金字塔的微結構,且正金字塔的微結構占多數;所述類似倒金字塔的微結構的下部為倒稜錐結構,其上部為倒圓台結構;所述類似倒金字塔的微結構的頂部選自圓形、橢圓形或由多條曲線圍成的閉合圖形中的一種或幾種。
- 一種晶體矽太陽能電池的絨面結構的製備方法,其特徵在於,包括如下步驟:(1)將矽片放入含有金屬離子的溶液中浸泡,使矽片表面塗覆一層金屬奈米顆粒;所述溶液中金屬離子濃度大於1E-3莫耳/升,且氫氟酸的濃度大於1E-2莫耳/升;(2)用第一化學腐蝕液腐蝕矽片表面,形成奈米線或多孔矽結構;溫度為25~90℃,時間為2~10分;所述第一化學腐蝕液為氫氟酸和氧化劑的混合溶液;其中,氫氟酸的濃度為1~15莫耳/升,氧化劑的濃度為0.05~0.5莫耳/升; (3)將上述矽片放入第二化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構形成正金字塔的微結構;所述第二化學腐蝕液為鹼液;所述鹼液的濃度為0.001~0.1莫耳/升,反應時間為10~1000秒,反應溫度為5~85℃。
- 根據權利要求8所述的製備方法,其中所述步驟(1)中含有金屬離子的溶液中還包含氫氟酸。
- 一種晶體矽太陽能電池的絨面結構的製備方法,其特徵在於,包括如下步驟:(1)將矽片放入含有氧化劑以及金屬鹽的氫氟酸溶液中,形成奈米線或多孔矽結構;溫度為25~90℃,時間為2~10分;所述溶液中金屬離子濃度大於1E-3莫耳/升,且氫氟酸的濃度大於1E-2莫耳/升;(2)將上述矽片放入第一化學腐蝕液中進行修正腐蝕,使上述奈米線或多孔矽結構形成正金字塔的微結構;所述第一化學腐蝕液為鹼液;所述鹼液的濃度為0.001~0.1莫耳/升,反應時間為10~1000秒,反應溫度為5~85℃。
- 根據權利要求4或5或6或8或9或10所述的製備方法,其中所述修正步驟之前或之後還包括去金屬離子的步驟,分別用第一清洗液、第二清洗液、去離子水清洗上述矽片,去除金屬顆粒;所述第一清洗液為品質百分比為27~69%的硝酸溶液,清洗時間為60~1200秒,清洗溫度為5~85℃; 所述第二清洗液為品質百分比為1~10%的氫氟酸溶液,清洗時間為60~600秒,清洗溫度為5~45℃。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510398065.0A CN105226113B (zh) | 2015-07-09 | 2015-07-09 | 一种晶体硅太阳能电池的绒面结构及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201703269A TW201703269A (zh) | 2017-01-16 |
TWI599060B true TWI599060B (zh) | 2017-09-11 |
Family
ID=54994950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105114542A TWI599060B (zh) | 2015-07-09 | 2016-05-11 | Suede structure of a crystalline silicon solar cell and its preparation method |
Country Status (4)
Country | Link |
---|---|
US (1) | US20170358695A1 (zh) |
CN (2) | CN108054224B (zh) |
TW (1) | TWI599060B (zh) |
WO (1) | WO2017004959A1 (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017201702A1 (zh) * | 2016-05-26 | 2017-11-30 | 南京中云新材料有限公司 | 一种单晶硅片表面织构化的方法 |
CN106549083B (zh) * | 2016-06-27 | 2018-08-24 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池绒面结构的制备方法 |
CN106057972A (zh) * | 2016-06-27 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | 晶体硅太阳能电池绒面结构的制备方法 |
CN106449878A (zh) * | 2016-10-31 | 2017-02-22 | 苏州宝馨科技实业股份有限公司 | 一种黑硅制备方法、制绒机及采用该制备方法制成的黑硅 |
CN107104165A (zh) * | 2017-04-18 | 2017-08-29 | 云南大学 | 一种基于石墨烯硅倒金字塔阵列肖特基光伏电池制造方法 |
CN107190316A (zh) * | 2017-05-17 | 2017-09-22 | 北京普扬科技有限公司 | 包含叠加倒四棱锥绒面结构的多晶硅片、其制备方法及应用 |
CN107731940B (zh) * | 2017-08-22 | 2021-08-06 | 北京普扬科技有限公司 | 一种perc多晶硅太阳能电池及其制备方法 |
CN107564976B (zh) * | 2017-08-22 | 2021-06-25 | 北京普扬科技有限公司 | 一种双面电池及其制备方法 |
CN107611197B (zh) * | 2017-09-05 | 2021-06-25 | 北京普扬科技有限公司 | 一种ibc电池及其制备方法 |
CN107564988B (zh) * | 2017-09-05 | 2021-06-25 | 北京普扬科技有限公司 | 一种mwt电池及其制备方法 |
CN108010986A (zh) * | 2017-11-13 | 2018-05-08 | 江苏爱多能源科技有限公司 | 一种利用湿法黑硅制绒工艺 |
CN107946386A (zh) * | 2017-12-01 | 2018-04-20 | 浙江晶科能源有限公司 | 一种黑硅电池的绒面制备方法 |
CN108847432A (zh) * | 2018-06-22 | 2018-11-20 | 东方日升(洛阳)新能源有限公司 | 一种用于多晶硅金刚线切片的制绒工艺 |
CN108963031B (zh) * | 2018-06-25 | 2021-01-15 | 东方日升新能源股份有限公司 | 一种解决金刚线湿法刻蚀黑硅电池片el不良的方法 |
CN109244178B (zh) * | 2018-08-09 | 2020-10-27 | 江苏辉伦太阳能科技有限公司 | 一种无金属催化黑硅的制备方法 |
CN109659380A (zh) * | 2018-12-17 | 2019-04-19 | 中节能太阳能科技(镇江)有限公司 | 倒金字塔绒面及太阳能电池的制备方法 |
CN109638088A (zh) * | 2018-12-24 | 2019-04-16 | 浙江晶科能源有限公司 | 太阳能电池及其制作方法及制绒方法 |
CN109686818A (zh) * | 2018-12-25 | 2019-04-26 | 浙江晶科能源有限公司 | 一种制备单晶硅倒金字塔绒面的方法 |
CN110491786B (zh) * | 2019-08-05 | 2021-08-13 | 西安交通大学 | 一种采用盐溶液腐蚀晶体硅的方法 |
CN110644053A (zh) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | 一种制备苞米状单晶硅绒面复合制绒添加剂配方及使用方法 |
CN110644057A (zh) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | 一种含烷基糖苷的单晶硅制绒添加剂配方及使用方法 |
CN114035253B (zh) * | 2021-11-23 | 2024-06-07 | 西安知微传感技术有限公司 | 具有杂散光消除功能的mems微镜、激光扫描设备和微镜的制作方法 |
CN116978960B (zh) * | 2023-09-22 | 2024-01-09 | 金阳(泉州)新能源科技有限公司 | 一种高转换效率的背接触太阳能电池及其制备方法和组件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103219428A (zh) * | 2013-04-12 | 2013-07-24 | 苏州大学 | 一种晶体硅太阳能电池的绒面结构及其制备方法 |
CN104409564A (zh) * | 2014-10-31 | 2015-03-11 | 浙江大学 | 一种n型纳米黑硅的制备方法以及太阳能电池的制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007194485A (ja) * | 2006-01-20 | 2007-08-02 | Osaka Univ | 太陽電池用シリコン基板の製造方法 |
CN2886808Y (zh) * | 2006-01-24 | 2007-04-04 | 中电电气(南京)光伏有限公司 | N型硅太阳能电池 |
NL2003390C2 (en) * | 2009-08-25 | 2011-02-28 | Stichting Energie | Solar cell and method for manufacturing such a solar cell. |
CN101692357B (zh) * | 2009-10-13 | 2011-12-28 | 华东师范大学 | 一种绒面掺杂氧化锌透明导电薄膜的制备方法 |
US20120085397A1 (en) * | 2010-10-11 | 2012-04-12 | Choul Kim | Solar cell |
US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
CN102130205A (zh) * | 2010-12-10 | 2011-07-20 | 上海太阳能电池研究与发展中心 | 一种多晶硅太阳能电池的表面催化制绒方法 |
WO2012150627A1 (ja) * | 2011-05-02 | 2012-11-08 | 三菱電機株式会社 | シリコン基板の洗浄方法および太陽電池の製造方法 |
KR20130057104A (ko) * | 2011-11-23 | 2013-05-31 | 주식회사 세원 | 텍스처링된 표면을 갖는 상대 전극을 포함한 염료감응 태양전지 |
CN102437211A (zh) * | 2011-12-06 | 2012-05-02 | 天津中环半导体股份有限公司 | 一种背电极太阳能电池结构及其制造方法 |
CN102683467A (zh) * | 2012-05-15 | 2012-09-19 | 中国科学院半导体研究所 | 太阳能电池模块 |
CN103456804B (zh) * | 2013-09-24 | 2016-04-27 | 上海大学 | 在多晶硅上形成倒金字塔型多孔表面纳米织构的方法及制备短波增强型太阳电池的方法 |
-
2015
- 2015-07-09 CN CN201711463599.2A patent/CN108054224B/zh active Active
- 2015-07-09 CN CN201510398065.0A patent/CN105226113B/zh active Active
- 2015-12-13 US US15/514,408 patent/US20170358695A1/en not_active Abandoned
- 2015-12-31 WO PCT/CN2015/100123 patent/WO2017004959A1/zh active Application Filing
-
2016
- 2016-05-11 TW TW105114542A patent/TWI599060B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103219428A (zh) * | 2013-04-12 | 2013-07-24 | 苏州大学 | 一种晶体硅太阳能电池的绒面结构及其制备方法 |
CN104409564A (zh) * | 2014-10-31 | 2015-03-11 | 浙江大学 | 一种n型纳米黑硅的制备方法以及太阳能电池的制备方法 |
Non-Patent Citations (1)
Title |
---|
Björn Hoffmann,Wet–Chemically Etched Silicon Nanowire Solar Cells:Fabrication and Advanced Characterization, INTECH,19,December,2012,Chapter10 * |
Also Published As
Publication number | Publication date |
---|---|
CN105226113B (zh) | 2018-06-01 |
WO2017004959A1 (zh) | 2017-01-12 |
CN108054224B (zh) | 2020-03-03 |
US20170358695A1 (en) | 2017-12-14 |
TW201703269A (zh) | 2017-01-16 |
CN108054224A (zh) | 2018-05-18 |
CN105226113A (zh) | 2016-01-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI599060B (zh) | Suede structure of a crystalline silicon solar cell and its preparation method | |
JP6648070B2 (ja) | 結晶シリコン太陽電池のテクスチャー構造およびその調製方法 | |
JP6392866B2 (ja) | 結晶シリコン太陽電池の表面テクスチャ構造及びその製造方法 | |
CN107658221B (zh) | 一种金刚线切割多晶硅片的制绒方法 | |
CN105870263B (zh) | 一种晶体硅太阳能电池绒面结构的制备方法 | |
CN105405755B (zh) | 用于硅片金字塔制绒的酸性制绒液、制绒方法以及采用该制绒方法制绒而成的硅片 | |
CN106098810B (zh) | 一种晶体硅太阳能电池绒面结构的制备方法 | |
CN104562211B (zh) | 一种可提升单晶电池转换效率的制绒方法 | |
CN104966762B (zh) | 晶体硅太阳能电池绒面结构的制备方法 | |
CN107919275A (zh) | 一种常温制绒方法、及其制绒而成的硅片、太阳能电池片及其制备方法 | |
CN107623056A (zh) | 一种反应离子刻蚀方法形成的纳米绒面表面缺陷修复方法 | |
CN105133038B (zh) | 具有高效纳米绒面结构的多晶硅的制备方法及其应用 | |
CN110518075B (zh) | 一种黑硅钝化膜、其制备方法及应用 | |
CN106057972A (zh) | 晶体硅太阳能电池绒面结构的制备方法 | |
CN206271727U (zh) | 一种用于晶体硅的制绒槽 | |
CN205194713U (zh) | 一种用于太阳能电池的硅片 | |
CN107177889A (zh) | 一种单晶硅太阳能电池的表面绒面制备方法 | |
CN106067488B (zh) | 一种晶体硅太阳能电池的绒面结构的制备方法 | |
CN104979430A (zh) | 一种晶体硅太阳能电池的绒面结构的制备方法 | |
CN206541840U (zh) | 一种用于晶体硅的制绒槽 | |
Arafat et al. | Nur-E-Alam, M.; Kiong, TS; Amin, N. Fabrication of Black Silicon via Metal-Assisted Chemical Etching—A Review. Sustainability 2021, 131, 766 |