CN109468575A - A kind of preparation method of the yttria coating applied to semiconductor field - Google Patents
A kind of preparation method of the yttria coating applied to semiconductor field Download PDFInfo
- Publication number
- CN109468575A CN109468575A CN201811440872.4A CN201811440872A CN109468575A CN 109468575 A CN109468575 A CN 109468575A CN 201811440872 A CN201811440872 A CN 201811440872A CN 109468575 A CN109468575 A CN 109468575A
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- CN
- China
- Prior art keywords
- preparation
- coating
- yttria coating
- yttria
- spraying
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
Abstract
The present invention relates to a kind of preparation method of yttria coating applied to semiconductor field, the preparation of technology preparation uses air plasma spraying.The preparation method of the coating mainly comprises the steps that (1) covering without spraying area by part；(2) yttria coating is prepared using atmospheric plasma spraying technology；(3) by masking protection removal, part is cleaned.There is high compactness, high rotproofness, high-bond and high microhardness using the yttria coating that this method obtains, the comprehensive performance of coating is good, can effectively improve the service life of components.
Description
Technical field
The present invention relates to a kind of thermal sprayings to prepare field of ceramic coatings, especially a kind of oxidation applied to semiconductor field
The preparation method of yttrium coating.
Background technique
For semiconductor equipment enterprise, the development of semiconductor components plays this to pass for the development of semiconductor equipment
Important role.With the continuous development of semiconductor equipment, the corrosion resistance of the aluminum components in etch chamber is required more next
It is higher.Traditional aluminum components are formed one layer of anode film in aluminum component surface and are carried out corrosion resistant by the way of anodic oxidation
Erosion, but its corrosion resistance has been unable to meet the requirement of sophisticated semiconductor equipment, the service life reduction of aluminum components, replacement frequency
It is higher and higher.Therefore, in order to improve the service life of aluminum components, the stronger coating of corrosion resistance is needed to be coated in components
Surface.
Yttria coating is prepared using air plasma spraying, on the one hand the reason is that because preparing by the way of thermal spraying
Yttria coating compactness it is more preferable, it is more preferable with the binding force of matrix.On the other hand it is in etch chamber, is that etching gas exists
When corroding aluminum components, the al atomic ratio yttrium atom in traditional aluminum oxide coating layer is light, and the resistance to physics corrosivity of yttrium oxide is more
It is good；The activity of yttrium oxide is bigger than the activity of yttrium oxide, is easier to react with etching gas, yttrium fluoride obtained is less than aluminum fluoride
Easily evaporation, therefore the chemical corrosion resistance of yttrium oxide is more preferable than aluminium oxide.
Summary of the invention
It is an object of the invention to prepare a kind of yttria coating applied to semiconductor field, the technology of preparing of use is
Air plasma spraying, yttria coating rotproofness obtained is higher, coating is finer and close, coating binding force is more preferable, can be effective
Improve the service life of aluminum components.
The technical solution adopted by the present invention is that:
A kind of preparation method of the yttria coating applied to semiconductor field,
1) sandblasting is carried out to the part of spraying before spraying, and non-spraying area is carried out to block protection；
2) yttria coating is sprayed to matrix with air plasma spraying technique；
3) after spraying, protection will be blocked and removed, clean components, guarantee part cleanliness.
The sandblasting of the step 1) can use automatic sand blasting or manual sandblasting, the sand material of sandblasting can using Emery grains or
Person's silica.
The air plasma spraying technological parameter of the step 2) is as follows: argon flow is 90-130nplm；Hydrogen flowing quantity
It is 10-15nlpm；Electric current is 510-550A；Spray gun movement speed is 1300-1500mm/sec；Powder feeding rate is 50-70g/
min；Spray distance is 170-200mm.
Yttrium oxide powder is spherical, powder purity >=99.5% of reuniting, and diameier range is 30-45 μm.Prepared
Yttria coating thickness range is 220-270 μm, and the matrix of part is aluminium alloy, the porosity < of the yttria coating of acquisition
5%, the binding force > 12MPa of coating, microhardness > 3GPa, rotproofness > 120min.The coating can be applicable to etching,
On the key components and parts of the semiconductor equipments such as PECVD.
The invention has the advantages that
1) preparation of a kind of yttria coating applied to semiconductor field of the invention, sprays using atmospheric plasma
Painting technology, the physics of coating obtained and chemical corrosion resistance are well many than traditional aluminum oxide film.
2) a kind of yttria coating applied to semiconductor field of the invention, compactness is good, has very high knot
Resultant force and microhardness, coating performance is excellent, therefore can improve the service life of aluminum components well.
Detailed description of the invention
Fig. 1 is the SEM photograph for the yttria coating surface pattern that the present embodiment one amplifies 200 times.
Fig. 2 is the SEM photograph for the yttria coating surface pattern that the present embodiment one amplifies 1000 times.
Fig. 3 is one of the SEM photograph in the yttria coating section that the present embodiment one amplifies 1000 times.
Fig. 4 is the two of the SEM photograph in the yttria coating section that the present embodiment one amplifies 1000 times.
Fig. 5 is the SEM photograph for the yttria coating surface pattern that the present embodiment two amplifies 200 times.
Fig. 6 is the SEM photograph for the yttria coating surface pattern that the present embodiment two amplifies 1000 times.
Fig. 7 is one of the SEM photograph in the yttria coating section that the present embodiment two amplifies 1000 times.
Fig. 8 is the two of the SEM photograph in the yttria coating section that the present embodiment two amplifies 1000 times.
Specific embodiment
The present invention program is described in detail with example with reference to the accompanying drawing.
Embodiment one
Firstly, non-spraying area is protected with masking tape, part is polished with manual polishing machine, use
Polishing material is Emery grains, and the range of surface roughness of the components after polishing is Ra:4.4-5.0 μm.
Then, yttria coating is prepared with air plasma spraying, the powder of use is business powder, the purity of powder
>=99.5%, diameier D50=55 μm.Part base solid is aluminium alloy 6061, and the spraying equipment used is that import spraying is set
Standby, the electric current of setting is 510A, and argon flow is 100nlpm, and hydrogen flowing quantity is 11nlpm, the movement speed 1500mm/ of spray gun
Sec, sending a point rate is 70g/min, and spray distance is 180mm.225 μm of obtained coating layer thickness, the mean porosities of coating
It is 4.7%, the average binding force of coating is 12.8MPa, and average microhardness is 3.56GPa, and corrosion resistance is 3.4h.
Finally, masking tape is removed, then cleaned in broom closet, obtains the very high components of cleanliness.
Embodiment two
Firstly, non-spraying area is protected with tooling, part is polished with automatic polishing machine, the polishing of use
Material is silica, and the range of surface roughness of the components after polishing is Ra:4.8-5.2 μm.
Then, yttria coating is prepared with air plasma spraying, the powder of use is business powder, the purity of powder
>=99.95%, diameier D50=48 μm.Part base solid is aluminium alloy 6061, and the spraying equipment used is that import spraying is set
Standby, the electric current of setting is 540A, and argon flow is 120nlpm, and hydrogen flowing quantity is 15nlpm, the movement speed 1300mm/ of spray gun
Sec, sending a point rate is 60g/min, and spray distance is 195mm.256 μm of obtained coating layer thickness, the mean porosities of coating
It is 3.7%, the average binding force of coating is 14.2MPa, and average microhardness is 4.12GPa, and corrosion resistance is 4.2h.
Finally, masking tooling is removed, then cleaned in broom closet, obtains the very high components of cleanliness.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for art technology
For personnel, the present invention can have various modifications and variations.The present invention can be used for semicon industry it is various need to have it is corrosion-resistant
The components of functional coating, but also it is not limited to semiconductor field.All within the spirits and principles of the present invention, made
Any modification, equivalent substitution, improvement and etc. should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of preparation method of the yttria coating applied to semiconductor field, which is characterized in that coating production master
It wants including the following steps:
1) sandblasting is carried out to the part before spraying, and non-spraying area is carried out to block protection；
2) yttria coating is sprayed to matrix with air plasma spraying technique；
3) after spraying, protection will be blocked and removed, clean components, guarantee part cleanliness.
2. the preparation method of yttria coating as described in claim 1, which is characterized in that the sandblasting of the step 1) can adopt
With automatic sand blasting or manual sandblasting, sand-blast material can use Emery grains or earth silicon material；Guard method can use
Adhesive tape masking or tooling protection.
3. the preparation method of yttria coating as described in claim 1, which is characterized in that the atmospheric plasma of the step 2)
Spraying parameter is as follows: argon flow is 90-130nplm；Hydrogen flowing quantity is 10-15nlpm；Electric current is 510-550A；Spray gun
Movement speed is 1300-1500mm/sec；Powder feeding rate is 50-70g/min；Spray distance is 170-200mm.
4. the preparation method of yttria coating as described in claim 1, which is characterized in that step 2) is using yttrium oxide powder
Reunite spherical, powder purity >=99.5%, diameier range is 30-45 μm.
5. the preparation method of yttria coating as described in claim 1, which is characterized in that yttria coating thickness range is
220-270μm。
6. the preparation method of yttria coating as described in claim 1, which is characterized in that yttria coating can be applicable to quarter
On the key components and parts of the semiconductor equipments such as erosion, PECVD.
7. the preparation method of yttria coating as described in claim 1, which is characterized in that the matrix of part is aluminium alloy, is obtained
Porosity < 5%, the binding force > 12MPa of coating of the yttrium oxide obtained, microhardness > 3GPa, rotproofness > 120min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811440872.4A CN109468575A (en) | 2018-11-29 | 2018-11-29 | A kind of preparation method of the yttria coating applied to semiconductor field |
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| CN201811440872.4A CN109468575A (en) | 2018-11-29 | 2018-11-29 | A kind of preparation method of the yttria coating applied to semiconductor field |
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| CN109468575A true CN109468575A (en) | 2019-03-15 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110218965A (en) * | 2019-05-28 | 2019-09-10 | 沈阳富创精密设备有限公司 | A kind of preparation method of advanced ceramics layer |
| CN112210741A (en) * | 2020-08-27 | 2021-01-12 | 沈阳富创精密设备股份有限公司 | Preparation method of ceramic layer applied to integrated circuit industry |
| CN112490106A (en) * | 2020-11-30 | 2021-03-12 | 合肥微睿光电科技有限公司 | Upper electrode plasma fusion jetting method applied to dry etching process |
| CN112521183A (en) * | 2020-11-30 | 2021-03-19 | 合肥微睿光电科技有限公司 | Meltallizing method of ceramic piece for dry etching process |
| CN112831744A (en) * | 2020-12-31 | 2021-05-25 | 沈阳富创精密设备股份有限公司 | Preparation method of ceramic coating applied to semiconductor equipment |
| CN113122795A (en) * | 2021-04-07 | 2021-07-16 | 江苏凯威特斯半导体科技有限公司 | Preparation method of yttrium oxide coating of quartz for semiconductor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110218965A (en) * | 2019-05-28 | 2019-09-10 | 沈阳富创精密设备有限公司 | A kind of preparation method of advanced ceramics layer |
| CN112210741A (en) * | 2020-08-27 | 2021-01-12 | 沈阳富创精密设备股份有限公司 | Preparation method of ceramic layer applied to integrated circuit industry |
| CN112490106A (en) * | 2020-11-30 | 2021-03-12 | 合肥微睿光电科技有限公司 | Upper electrode plasma fusion jetting method applied to dry etching process |
| CN112521183A (en) * | 2020-11-30 | 2021-03-19 | 合肥微睿光电科技有限公司 | Meltallizing method of ceramic piece for dry etching process |
| CN112831744A (en) * | 2020-12-31 | 2021-05-25 | 沈阳富创精密设备股份有限公司 | Preparation method of ceramic coating applied to semiconductor equipment |
| CN113122795A (en) * | 2021-04-07 | 2021-07-16 | 江苏凯威特斯半导体科技有限公司 | Preparation method of yttrium oxide coating of quartz for semiconductor |
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| CB02 | Change of applicant information |
Address after: No.18a-1, Feiyun Road, Hunnan District, Shenyang City, Liaoning Province Applicant after: Shenyang fuchuang precision equipment Co.,Ltd. Address before: No.18a-1, Feiyun Road, Dongling District, Shenyang, Liaoning Province, 110000 Applicant before: Shenyang Fortune Precision Equipment Co.,Ltd. |
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Application publication date: 20190315 |
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| RJ01 | Rejection of invention patent application after publication |