CN112831744A

CN112831744A - Preparation method of ceramic coating applied to semiconductor equipment

Info

Publication number: CN112831744A
Application number: CN202011620274.2A
Authority: CN
Inventors: 徐俊阳; 李加
Original assignee: Shenyang Fortune Precision Equipment Co Ltd
Current assignee: Shenyang Fortune Precision Equipment Co Ltd
Priority date: 2020-12-31
Filing date: 2020-12-31
Publication date: 2021-05-25

Abstract

The invention relates to a preparation method of a ceramic coating applied to advanced semiconductor equipment. The method mainly comprises the following steps: (1) shielding the places which do not need to be sprayed by a shielding method; (2) pretreating the part to be sprayed; (3) selecting commercial powder, namely yttrium fluoride powder with the purity of more than or equal to 99.9 percent; (4) spraying by using an atmospheric plasma spraying technology; (5) and removing the shielding material and cleaning the parts. The thickness of the yttrium fluoride coating obtained by the method is about 200 mu m, the porosity of the coating is 5 percent, the corrosion resistance of the coating is higher, and the service life of parts of advanced semiconductor equipment is effectively prolonged.

Description

Preparation method of ceramic coating applied to semiconductor equipment

Technical Field

The invention relates to the technical field of semiconductors, in particular to a preparation method of a ceramic coating applied to semiconductor equipment.

Background

Recently, with the rapid development of the semiconductor industry, 5nm semiconductor devices are produced in large quantities abroad, and research on devices of 14nm or less is also being carried out domestically. With the improvement of the advancement of equipment, the requirements on parts are higher and higher. In an etching chamber of a semiconductor device, a plurality of aluminum parts are coated with plasma spraying oxides to improve the corrosion resistance of the parts, but the oxides have hydrophilicity and can absorb water when the etching chamber is opened, so that a fragile coating is formed in the air, the corrosion resistance of the wafer is influenced by the fragile coating, and particles are generated on the wafer to pollute the wafer. With the continuous development of equipment, the requirements and cleanliness of parts are higher and higher, and therefore, a method capable of solving the problem and improving the service life of the parts is required.

Disclosure of Invention

The invention aims to use a preparation method of a ceramic coating applied to semiconductor equipment and apply an atmospheric plasma spraying technology to spray a yttrium fluoride coating, so that a fragile coating generated in the air can be avoided, and the generation of pollution particles is reduced.

In order to achieve the purpose, the invention adopts the technical scheme that:

a method for preparing a ceramic coating applied to a semiconductor device comprises the following steps:

(1) before spraying, shielding the places which do not need to be sprayed, wherein the shielding method can adopt adhesive tape shielding or tool shielding;

(2) carrying out sandblasting pretreatment on the part surface needing to be sprayed so as to increase the surface roughness and the bonding force of the coating;

(3) selecting yttrium fluoride powder with the commercial purity of 99.9 percent;

(4) spraying by adopting an atmospheric plasma spraying technology;

(5) after spraying, the shielding protection is removed, and the parts are cleaned.

In the step (1), the batch parts can be shielded by adopting the tool and the adhesive tape, and the first parts can be shielded by adopting the adhesive tape only.

And (2) performing sand blasting treatment on the part surface needing sand blasting, and performing sand blasting by using alumina gravel to obtain the required surface roughness.

In the step (3), yttrium fluoride powder with the commercial purity of 99.9% is selected to ensure the purity and cleanliness of the coating.

In the step (4), an atmospheric plasma spraying technology is adopted, and the spraying parameters are that the current is 180-; the spraying distance is 160-200 mm; the argon flow used was 200-; the hydrogen flow rate used is 60-80 lpm; the thickness of the prepared coating is 200 microns, and the coating plays a role in corrosion resistance and ultra-cleanness when being applied to advanced semiconductor equipment.

The invention has the advantages that:

1. the yttrium fluoride coating is prepared by adopting atmospheric plasma spraying, so that the coating is not hydrophilic, and the corrosion resistance of the coating is stronger;

2. the yttrium fluoride coating is prepared by adopting atmospheric plasma spraying, the coating is not easy to generate pollution particles, the cleanliness is higher, and the requirement of advanced semiconductor equipment on the cleanliness can be met.

Drawings

FIG. 1 is an SEM photograph of a 500 Xmagnification section of a yttrium fluoride coating of this example

FIG. 2 is an SEM photograph of a 500 Xmagnification section of the yttrium fluoride coating of this example

Detailed Description

The invention will now be described in detail with reference to the accompanying figures 1-2 and examples.

Example one

Firstly, the places which do not need to be sprayed are shielded and protected by special adhesive tapes. Commercial high-purity yttrium fluoride powder is adopted, the purity of the powder is more than or equal to 99.9 percent, and the diameter of the powder is about 35 mu m.

The part was subjected to pretreatment before spray coating and sandblasted, the sand used was alumina, and the roughness of the surface of the part after sandblasting was about 5 μm. Then spraying the yttrium fluoride coating by adopting an atmospheric plasma spraying technology, wherein the set spraying current is 165A, and the spraying distance is 160 mm; the argon flow used was 230 lpm; the hydrogen flow rate used was 65 lpm; the thickness of the prepared coating is between 190 and 210 microns. The coating is analyzed, the surface roughness of the coating can reach about Ra 6.4 μm, and as can be seen from figure 1, the structure of the coating is uniform, the porosity of the coating is tested by software, and the porosity is about 5.2%.

Finally, the shielding protection is removed, and then the parts are cleaned. Because the yttrium fluoride coating has no hydrophilicity and does not react in air, the corrosion resistance of the yttrium fluoride coating is higher, and pollution particles generated by the coating are less, so that higher cleanliness can be maintained.

Example two

Firstly, the parts in mass production are sprayed, and the design of a shielding tool is firstly carried out according to the characteristics of the spraying part, so that the shielding time is saved. The purity of the powder is more than or equal to that of commercial yttrium fluoride powder

99.9%, and the particle diameter of the powder is about 45 μm.

Then, the shielded part was sandblasted, and the surface roughness of the part after sandblasting was Ra-7 μm. Spraying the yttrium fluoride coating by adopting an atmospheric plasma spraying technology, wherein the spraying current is set to be 210A; the spraying distance is 190 mm; the argon flow used was 230 lpm; the hydrogen flow rate used was 75 lpm; the thickness of the prepared coating was 200-220 microns. The coating was analyzed and it can be seen from fig. 2 that the structure of the coating was uniform and the porosity of the coating was measured to be around 4.5%.

And finally, removing the shielding protection, and cleaning the parts to obtain parts with higher cleanliness.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and combinations are possible for those skilled in the art. The invention is mainly used for parts which have requirements on corrosion resistance in the field of integrated circuits, including but not limited to aluminum parts, and can also be ceramic parts. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a ceramic coating applied to a semiconductor device, comprising:

(4) spraying by adopting an atmospheric plasma spraying technology;

2. The method for preparing a ceramic coating applied to semiconductor equipment according to claim 1, wherein in the step (1), the tool and the tape can be used for shielding the batch parts, and the tape can be used only for shielding the first parts.

3. The method according to claim 1, wherein in the step (2), the part surface is subjected to sand blasting, and the part surface is subjected to sand blasting using alumina grit to obtain the desired surface roughness.

4. The method of claim 1, wherein in the step (3), yttrium fluoride powder with a commercial purity of 99.9% is selected to ensure the purity and cleanliness of the coating.

5. The method as claimed in claim 1, wherein in the step (4), the atmospheric plasma spraying technique is adopted, and the spraying parameters are that the current is 180-210A; the spraying distance is 160-200 mm; the argon flow used was 200-; the hydrogen flow rate used is 60-80 lpm; the thickness of the prepared coating is 200 microns, and the coating plays a role in corrosion resistance and ultra-cleanness when being applied to advanced semiconductor equipment.

6. The method of claim 1, wherein the yttrium fluoride ceramic layer is more resistant to etching gases such as fluorine ions, and is more suitable for advanced semiconductor devices.