CN109461654A - A kind of SiC Schottky diode and preparation method thereof of no injection type termination end structure - Google Patents
A kind of SiC Schottky diode and preparation method thereof of no injection type termination end structure Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 238000002347 injection Methods 0.000 title claims abstract description 26
- 239000007924 injection Substances 0.000 title claims abstract description 26
- 238000002161 passivation Methods 0.000 claims abstract description 55
- 239000004816 latex Substances 0.000 claims abstract description 46
- 229920000126 latex Polymers 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 41
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 41
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 41
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 41
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 80
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 26
- 238000005566 electron beam evaporation Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008236 heating water Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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Abstract
The present invention relates to a kind of SiC Schottky diodes and preparation method thereof of no injection type termination end structure, and preparation method on 4H-SiC substrate the following steps are included: form 4H-SiC drift layer；SiO is formed on 4H-SiC drift layer2Boron-doping latex active layer；Etch SiO2Boron-doping latex active layer retains part SiO on 4H-SiC drift layer2Boron-doping latex active layer；In SiO2The first passivation layer is formed on boron-doping latex active layer and 4H-SiC drift layer；Ohmic contact metal layer is prepared below 4H-SiC substrate；Etch the first passivation layer and SiO2Boron-doping latex active layer prepares Schottky contact metal layer on 4H-SiC drift layer to leak out the 4H-SiC drift layer of partial region；The first contact layer is formed on Schottky contact metal layer；The second contact layer is formed below ohmic contact metal layer；The second passivation layer is formed on the first contact layer of the first passivation layer and part, to complete the preparation of SiC Schottky diode.Schottky diode of the present invention avoids ion implanting and gives diode bring lattice damage.
Description
Technical field
The invention belongs to field of semiconductor devices, and in particular to a kind of SiC Schottky two of no injection type termination end structure
Pole pipe and preparation method thereof.
Background technique
Silicon carbide (Silicon Carbide, abbreviation SiC) is used as a kind of semiconductor material with wide forbidden band, not only breakdown electric field
Intensity is high, thermal stability is good, also has the characteristics that carrier saturation drift velocity is high, thermal conductivity is high, in high temperature, high frequency, big function
Rate device and production of integrated circuits field have broad application prospects.
Since device is in the discontinuous of P-N junction or schottky junction, and there are curvature in the corner of knot, so as to cause table
Phenomena such as face power line is intensive, high in the outside electric field ratio body of knot, this is especially worth in silicon carbide high pressure power device
Concern.Knot terminal technology is to alleviate knot outer edge electric field concentration effect, improves device electric breakdown strength effective means.
Referring to Figure 1, Fig. 1 is a kind of cross section structure schematic diagram for SiC Schottky diode that the prior art provides；Figure
In, 10 be Ag contact layer；20 be Ni ohmic contact metal layer；30 be N-type 4H-SiC substrate；40 be N-type 4H-SiC drift layer；50
For p-type 4H-SiC terminal protection area；60 be SiO2Passivation layer；70 be Ti Schottky contact metal layer；80 be Al contact layer；90 are
Polyimide covercoat.In break-through conventional structure, device punctures in advance, reduces reverse current leakage in order to prevent, usually exists
The fringe region of device forms p-type 4H-SiC terminal protection area by high energy, high temperature tension, and needs in high temperature (> 1600
DEG C) under carry out it is ion-activated.But the technique is on the one hand expensive, and it is more demanding to production equipment, on the other hand also give sample
Product bring unnecessary lattice damage.
Summary of the invention
Therefore, a kind of no injection type terminating end is proposed to solve technological deficiency and deficiency, the present invention of the existing technology
SiC Schottky diode of structure and preparation method thereof.The technical problem to be solved in the present invention is achieved through the following technical solutions:
An embodiment provides a kind of SiC Schottky diode preparation sides of no injection type termination end structure
Method, comprising the following steps:
4H-SiC drift layer is formed on 4H-SiC substrate；
SiO is formed on the 4H-SiC drift layer2Boron-doping latex active layer；
Etch the SiO2Boron-doping latex active layer retains the part SiO on the 4H-SiC drift layer2Boron-doping latex
Active layer；
In the SiO2The first passivation layer is formed on boron-doping latex active layer and the 4H-SiC drift layer；
Ohmic contact metal layer is prepared below the 4H-SiC substrate；
Etch first passivation layer and the SiO2Boron-doping latex active layer, to leak out the 4H-SiC drift of partial region
It moves on layer, prepares Schottky contact metal layer on the 4H-SiC drift layer；
The first contact is formed on the Schottky contact metal layer；
The second contact layer is formed below the ohmic contact metal layer；
The second passivation layer is formed on first passivation layer and part first contact layer, to complete Xiao SiC
The preparation of special based diode.
In one embodiment of the invention, 4H-SiC drift layer is formed on 4H-SiC substrate, comprising:
To be formed on the 4H-SiC substrate with a thickness of 10~30 μm, Doped ions be N ion, doping concentration be 5 ×
1014cm-3~1 × 1016cm-3N-type described in 4H-SiC drift layer.
In one embodiment of the invention, SiO is formed on the 4H-SiC drift layer2Boron-doping latex active layer, comprising:
Using spin coating proceeding, SiO is formed on the 4H-SiC drift layer2Boron-doping latex active layer；
It is 1000 DEG C in reaction temperature, reaction gas N2Under conditions of, it is diffused annealing.
In one embodiment of the invention, in the SiO2It is formed on boron-doping latex active layer and the 4H-SiC drift layer
First passivation layer, comprising:
It is 700 DEG C in reaction temperature using chemical vapor deposition process, under conditions of reaction pressure is 600mTorr,
The SiO2The first passivation layer is formed on boron-doping latex active layer and the 4H-SiC drift layer.
In one embodiment of the invention, first passivation layer is SiO2Passivation layer.
In one embodiment of the invention, second passivation layer is polyimide passivation layer.
In one embodiment of the invention, first contact layer is Al contact layer.
In one embodiment of the invention, second contact layer is Ag contact layer.
Another embodiment of the present invention provides a kind of SiC Schottky diode of no injection type termination end structure, institutes
It states Schottky diode and is prepared by the method any in above-described embodiment and formed.
Another embodiment of the invention provides a kind of SiC Schottky diode of no injection type termination end structure, packet
It includes: the second contact layer, ohmic contact metal layer, 4H-SiC substrate, 4H-SiC drift layer, SiO2Boron-doping latex source, schottky junctions
Touch metal layer, the first contact layer, the first passivation layer, the second passivation layer；
The 4H-SiC drift layer, the 4H-SiC substrate, the ohmic contact metal layer stack gradually from top to bottom in
On second contact layer；
The SiO2Boron-doping latex source, the Schottky contact metal layer are located on the 4H-SiC drift layer；
First passivation layer is located at the 4H-SiC drift layer and the SiO2In boron-doping latex source；
Second passivation layer is located on part first contact layer and first passivation layer.
Compared with prior art, beneficial effects of the present invention:
1, the present invention uses SiO2Boron-doping latex source+diffusion annealing mode is prepared using no injection type terminal structure
SiC Schottky diode avoids ion implanting and gives diode bring lattice damage；
2, SiC Schottky diode prepared by the present invention reduces the requirement for production equipment, save it is economical at
This.
Detailed description of the invention
Fig. 1 is a kind of cross section structure schematic diagram for SiC Schottky diode that the prior art provides；
Fig. 2 is a kind of SiC Schottky diode preparation side of no injection type termination end structure provided in an embodiment of the present invention
The flow diagram of method；
Fig. 3 is a kind of section of the SiC Schottky diode of no injection type termination end structure provided in an embodiment of the present invention
Structural schematic diagram.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one:
Fig. 2 is referred to, Fig. 2 is a kind of SiC Schottky two of no injection type termination end structure provided in an embodiment of the present invention
The flow diagram of pole pipe preparation method.
The embodiment of the invention provides a kind of suitable for SiC power device without injection type junction termination structures preparation method,
Specifically includes the following steps:
Step 1: 4H-SiC drift layer is formed on 4H-SiC substrate.
Growth thickness is 10~30 μm on 4H-SiC substrate, Doped ions are N ion, doping concentration be 5 ×
1014cm-3~1 × 1016cm-3N-type 4H-SiC drift layer.
It should be noted that before growing 4H-SiC drift layer, it is also necessary to it is clear to carry out standard RCA to 4H-SiC substrate
It washes, the purpose of cleaning is to remove the natural oxide and other impurities on 4H-SiC substrate.
Step 2: forming SiO on 4H-SiC drift layer2Boron-doping latex active layer.
Specifically, step 2 the following steps are included:
Step 21: using spin coating proceeding, form SiO on 4H-SiC drift layer2Boron-doping latex active layer.
Step 22: forming SiO2It is 1000 DEG C in reaction temperature after boron-doping latex active layer, reaction gas N2Item
Under part, annealing is diffused to entire sample.
It should be noted that SiO2Boron-doping latex source be it is electrically charged, can then be carried out with the electric field in modulation terminal area
Diffusion annealing processing can form thin layer Pregionp in 4H-SiC drift layer surface, can prevent two pole of Schottky of preparation
Pipe breakdown in advance reduces reverse current leakage simultaneously.
Step 3: etching SiO2Boron-doping latex active layer retains the part SiO on 4H-SiC drift layer2Boron-doping latex source
Layer.
Specifically, SiO described in photoetching2The partial region of boron-doping latex active layer, then further etches into the 4H-SiC
On drift layer, the part SiO is retained on 4H-SiC drift layer2Boron-doping latex active layer.
Further, the shape of partial region is as shown in figure 3, its shape is made of several parallel strip structures, strip
Spacing between structure is 2 μm~3 μm；The width of strip structure is 5 μm (i.e. d in Fig. 3).
Specifically, it can be not limited thereto according to the different etchings for needing to carry out different graphic, the embodiment of the present invention.
It should be noted that the purpose of the step be in order to further such that preparation Schottky diode termination environment
Electric field relative smooth prevents from puncturing in advance.
Step 4: in SiO2The first passivation layer is formed on boron-doping latex active layer and 4H-SiC drift layer.
Further, the first passivation layer is SiO2Passivation layer.
It further, is 600mTorr in reaction pressure, reaction temperature is 700 DEG C using chemical vapor deposition process
Under the conditions of, in SiO2SiO is formed on boron-doping latex active layer and 4H-SiC drift layer2Passivation layer.
Step 5: preparing ohmic contact metal layer below 4H-SiC substrate.
It further, is 1000 DEG C in reaction temperature using magnetron sputtering or electron beam evaporation process, the reaction time is
Under conditions of 3min, Ni ohmic contact metal layer is formed below 4H-SiC substrate, wherein the thickness of Ni ohmic contact metal layer
Preferably 200nm.
Step 6: the first passivation layer of etching and SiO2Boron-doping latex active layer, to leak out the 4H-SiC drift layer of partial region,
Schottky contact metal layer is prepared on 4H-SiC drift layer.
Further, the first passivation layer and SiO are etched2Boron-doping latex active layer, to leak out the 4H-SiC drift of partial region
Layer prepares Ti Schottky contact metal layer using magnetron sputtering or electron beam evaporation process on 4H-SiC drift layer.
Further, the preparation of Ti schottky metal layer may comprise steps of:
Step 61: in SiO2Photoetching Schottky contact area on passivation layer.
5min is toasted firstly, sample is placed on 200 DEG C of hot plate；Then, in SiO2Photoresist is carried out on passivation layer
Gluing and whirl coating, whirl coating revolving speed is 3500r/min, and sample is placed on 90 DEG C of hot plate and toasts 1min；Then, sample is put
Enter in litho machine, by having formulated domain lithographic definition Schottky contact area, to SiO2Photoresist on passivation layer is exposed
Light；Finally, the sample that will be completed after exposure is put into developer solution to remove the photoresist in Schottky contact area, and to its into
It row ultrapure water and is dried with nitrogen；
Step 62: vapor deposition schottky metal.
The sample for completing photoetching is put into magnetron sputtering coater, after vacuum degree reaches, starts that Schottky gold is deposited
Belong to Ti；
Step 63: the preparation of Schottky contact metal is completed in stripping metal and annealing.
Sample after completion plated film is impregnated at least 40min in acetone, is ultrasonically treated；Then sample is put into temperature
Degree is heating water bath 5min in 60 DEG C of stripper；Then, sample is sequentially placed into acetone soln and ethanol solution ultrasonic clear
Wash 3min；Finally, with ultrapure water sample and with being dried with nitrogen；Finally, sample is put into quick anneal oven, to annealing furnace
In be passed through 10min nitrogen, then in nitrogen atmosphere will annealing furnace temperature be set as 450 DEG C, carry out the rapid thermal annealing of 3min so that
Schottky metal on Schottky contact area sinks, to form the Europe of Schottky contact metal Yu N-type 4H-SiC drift layer
Nurse contact, completes the production of Schottky contacts.
Further, the thickness of Ti Schottky contact metal layer is preferably 300nm.
Step 7: the first contact layer is formed on Schottky contact metal layer.
Further, the first contact layer is Al contact layer.
Further, using electron beam evaporation process, Al contact layer is formed on Schottky contact metal layer,
Specifically, sample being put into electron beam evaporation platform, the reaction chamber vacuum degree to electron beam evaporation platform reaches 2 ×
After 10-6Torr, Al is evaporated on Schottky contact metal layer, forms Al contact layer.
Step 8: the second contact layer is formed below ohmic contact metal layer.
Further, the second contact layer is Ag contact layer.
Further, using electron beam evaporation process, Ag contact layer is formed below ohmic contact metal layer.
Specifically: sample is put into electron beam evaporation platform, the reaction chamber vacuum degree to electron beam evaporation platform reaches 2 ×
10-6After Torr, Ag is evaporated below ohmic contact metal layer, forms Ag contact layer.
Step 9: the second passivation layer is formed on first passivation layer and part first contact layer, to complete SiC
The preparation of Schottky diode.
Further, second passivation layer is polyimide passivation layer.
Specifically, in SiO2Spin-on polyimide on passivation layer and part Al contact layer forms polyimide passivation layer,
Complete the preparation of SiC Schottky diode.
Fig. 3 is referred to, Fig. 3 is a kind of SiC Schottky two of no injection type termination end structure provided in an embodiment of the present invention
The cross section structure schematic diagram of pole pipe.The embodiment of the invention also provides a kind of SiC Schottky two of no injection type termination end structure
Pole pipe.SiC Schottky diode includes: Ag contact layer 1, Ni ohmic contact metal layer 2,4H-SiC substrate 3,4H-SiC drift layer
4、SiO2Boron-doping latex active layer 5, Ti Schottky contact metal layer 6, Al contact layer 7, SiO2Passivation layer 8, polyimide passivation layer 9；
4H-SiC drift layer 4,4H-SiC substrate 3, ohmic contact metal layer 2 are sequentially located at from top to bottom on Ag contact layer 1；
SiO2Boron-doping latex source 5, Schottky contact metal layer 6 are located on 4H-SiC drift layer 4；
Al contact layer 7 is located on Schottky contact metal layer 6；
SiO2Passivation layer 8 is located at 4H-SiC drift layer 4 and SiO2In boron-doping latex source 5；
Polyimide passivation layer 9 is located at part Al contact layer 7 and SiO2On passivation layer 8.
Compared with prior art, the invention has the following advantages that
1, the present invention is prepared by the way of SiO2 boron-doping latex source+diffusion annealing using no injection type terminal structure
SiC Schottky diode avoids ion implanting and gives diode bring lattice damage；
2, SiC Schottky diode prepared by the present invention reduces the requirement for production equipment, save it is economical at
This.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (10)
1. a kind of SiC Schottky diode preparation method of no injection type termination end structure, which is characterized in that including following step
It is rapid:
4H-SiC drift layer is formed on 4H-SiC substrate；
SiO is formed on the 4H-SiC drift layer2Boron-doping latex active layer；
Etch the SiO2Boron-doping latex active layer retains the part SiO on the 4H-SiC drift layer2Boron-doping latex active layer；
In the SiO2The first passivation layer is formed on boron-doping latex active layer and the 4H-SiC drift layer；
Ohmic contact metal layer is prepared below the 4H-SiC substrate；
Etch first passivation layer and the SiO2Boron-doping latex active layer, to leak out the 4H-SiC drift layer of partial region,
Schottky contact metal layer is prepared on the 4H-SiC drift layer；
The first contact layer is formed on the Schottky contact metal layer；
The second contact layer is formed below the ohmic contact metal layer；
The second passivation layer is formed on first passivation layer and part first contact layer, to complete the SiC Schottky
The preparation of diode.
2. the SiC Schottky diode preparation method of no injection type termination end structure according to claim 1, feature exist
In the formation 4H-SiC drift layer on 4H-SiC substrate, comprising:
To be formed on the 4H-SiC substrate with a thickness of 10~30 μm, Doped ions be N ion, doping concentration be 5 ×
1014cm-3~1 × 1016cm-3N-type described in 4H-SiC drift layer.
3. the SiC Schottky diode preparation method of no injection type termination end structure according to claim 1, feature exist
In forming SiO on the 4H-SiC drift layer2Boron-doping latex active layer, comprising:
Using spin coating proceeding, the SiO is formed on the 4H-SiC drift layer2Boron-doping latex active layer；
It is 1000 DEG C in reaction temperature, reaction gas N2Under conditions of, it is diffused annealing.
4. the SiC Schottky diode preparation method of no injection type termination end structure according to claim 1, feature exist
In in the SiO2The first passivation layer is formed on boron-doping latex active layer and the 4H-SiC drift layer, comprising:
It is 700 DEG C in reaction temperature, under conditions of reaction pressure is 600mTorr, described using chemical vapor deposition process
SiO2First passivation layer is formed on boron-doping latex active layer and the 4H-SiC drift layer.
5. the SiC Schottky diode preparation method of no injection type termination end structure according to claim 1, feature exist
In first passivation layer is SiO2Passivation layer.
6. the SiC Schottky diode preparation method of no injection type termination end structure according to claim 1, feature exist
In second passivation layer is polyimide passivation layer.
7. the SiC Schottky diode preparation method of no injection type termination end structure according to claim 1, feature exist
In first contact layer is Al contact layer.
8. the SiC Schottky diode preparation method of no injection type termination end structure according to claim 1, feature exist
In second contact layer is Ag contact layer.
9. a kind of SiC Schottky diode of no injection type termination end structure, which is characterized in that the SiC Schottky diode
It is prepared and is formed by method according to any one of claims 1 to 8.
10. a kind of SiC Schottky diode of no injection type termination end structure characterized by comprising the second contact layer (1),
Ohmic contact metal layer (2), 4H-SiC substrate (3), 4H-SiC drift layer (4), SiO2Boron-doping latex active layer (5), schottky junctions
Touch metal layer (6), the first contact layer (7), the first passivation layer (8), the second passivation layer (9)；
The 4H-SiC drift layer (4), the 4H-SiC substrate (3), the ohmic contact metal layer (2), from top to bottom successively
It is laminated on second contact layer (1)；
The SiO2Boron-doping latex source (5), the Schottky contact metal layer (6) are located at the 4H-SiC drift layer (4)
On；
First contact layer (7) is located on the Schottky contact metal layer (6)；
First passivation layer (8) is located at the 4H-SiC drift layer (4) and the SiO2In boron-doping latex source (5)；
Second passivation layer (9) is located on part first contact layer (7) and first passivation layer (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811064324.6A CN109461654A (en) | 2018-09-12 | 2018-09-12 | A kind of SiC Schottky diode and preparation method thereof of no injection type termination end structure |
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| CN1514480A (en) * | 2002-12-31 | 2004-07-21 | 上海贝岭股份有限公司 | Manufacturing technology of high voltage integrated circuit |
| US20150076522A1 (en) * | 2010-03-08 | 2015-03-19 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| CN104716044A (en) * | 2014-12-19 | 2015-06-17 | 成都士兰半导体制造有限公司 | Semiconductor device and forming method thereof |
| CN105931950A (en) * | 2016-04-29 | 2016-09-07 | 北京世纪金光半导体有限公司 | Silicon carbide high-voltage MPS diode manufacturing method |
| CN108281491A (en) * | 2017-12-28 | 2018-07-13 | 厦门市三安集成电路有限公司 | A kind of silicon carbide power device and preparation method thereof with step structure |
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| CN1514480A (en) * | 2002-12-31 | 2004-07-21 | 上海贝岭股份有限公司 | Manufacturing technology of high voltage integrated circuit |
| US20150076522A1 (en) * | 2010-03-08 | 2015-03-19 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| CN104716044A (en) * | 2014-12-19 | 2015-06-17 | 成都士兰半导体制造有限公司 | Semiconductor device and forming method thereof |
| CN105931950A (en) * | 2016-04-29 | 2016-09-07 | 北京世纪金光半导体有限公司 | Silicon carbide high-voltage MPS diode manufacturing method |
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Application publication date: 20190312 |