CN109449085A - A kind of 4H-SiC Schottky diode and preparation method thereof that Surge handling capability is enhanced - Google Patents
A kind of 4H-SiC Schottky diode and preparation method thereof that Surge handling capability is enhanced Download PDFInfo
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- CN109449085A CN109449085A CN201811063584.1A CN201811063584A CN109449085A CN 109449085 A CN109449085 A CN 109449085A CN 201811063584 A CN201811063584 A CN 201811063584A CN 109449085 A CN109449085 A CN 109449085A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 68
- 239000010432 diamond Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229910052682 stishovite Inorganic materials 0.000 claims description 12
- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 2
- 230000003068 static effect Effects 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 78
- 238000005566 electron beam evaporation Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000008236 heating water Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
Abstract
The present invention relates to a kind of 4H-SiC Schottky diode and preparation method thereof that Surge handling capability is enhanced, preparation method on 4H-SiC substrate the following steps are included: grow 4H-SiC drift layer；P-type diamond epitaxial layer and p-type diamond terminal protection area are formed in 4H-SiC drift layer；The first passivation layer is formed in p-type diamond epitaxial layer, p-type diamond terminal protection area and 4H-SiC drift layer surface；Ohmic contact metal layer is formed below 4H-SiC substrate；The first passivation layer of etched portions forms Schottky contact metal layer until leaking out 4H-SiC drift layer, in the 4H-SiC drift layer surface of leakage；The first contact layer is formed on Schottky contact metal layer, and the second contact layer is formed below ohmic contact metal layer；The second passivation layer is formed on the first contact layer of part, the first passivation layer of part and part Schottky contact metal layer, to complete the preparation of 4H-SiC Schottky diode.Pass through this preparation method, it is ensured that device can be obviously improved Surge handling capability under normal static characteristic.
Description
Technical field
The invention belongs to field of semiconductor devices, in particular to a kind of 4H-SiC Schottky two that Surge handling capability is enhanced
Pole pipe and preparation method thereof.
Background technique
SiC material forbidden bandwidth is big, breakdown electric field is high, saturation drift velocity and thermal conductivity are big, these material superior functions
Become the ideal material of production high power, high frequency, high temperature resistant, anti-radiation device.SiC schottky diode, which has, hits
The series of advantages such as voltage is high, current density is big, working frequency is high are worn, therefore development prospect is very extensive.Silicon carbide Xiao at present
One of the main problem that special based diode faces is exactly to improve the antisurge performance of device, it is made to have high reliability application energy
Power.
In order to realize higher antisurge characteristic, from device technology angle, the injection region p-type 4H-SiC and Ti Schottky are needed
Contact metal layer is capable of forming good Ohm characteristic.Referring to Figure 1, Fig. 1 is a kind of 4H-SiC Schottky two of the prior art
The cross section structure schematic diagram of pole pipe, wherein 11 be Ag contact layer；12 be Ni ohmic contact metal layer；13 serve as a contrast for N-type 4H-SiC
Bottom；14 be N-type 4H-SiC drift layer；15 be Ti Schottky contact metal layer；16 be Al contact layer；17 be SiO2Passivation layer；18
For the injection region p-type 4H-SiC；19 be p-type 4H-SiC terminal protection area；20 be polyimide covercoat.However, in conventional tradition
In the 4H-SiC Power SBD manufacture craft of structure, since schottky metal short annealing temperature is lower, above-mentioned Europe
Nurse characteristic can not be formed or ohmic contact resistance is larger, cannot achieve effectively few sub- injection effect.If improving annealing temperature
Degree, and the barrier height of Xiao Tequ can be made to reduce, cause the leakage current of device to increase, the reversed penalty of device.
Summary of the invention
Therefore, to solve technological deficiency and deficiency of the existing technology, the present invention proposes a kind of Surge handling capability enhancing
The preparation method of the 4H-SiC Schottky diode of type.The technical problem to be solved in the present invention is achieved through the following technical solutions:
An embodiment provides a kind of systems of 4H-SiC Schottky diode that Surge handling capability is enhanced
Preparation Method, comprising the following steps:
4H-SiC drift layer is formed on 4H-SiC substrate；
P-type diamond epitaxial layer and p-type diamond terminal protection area are formed in the 4H-SiC drift layer；
In the p-type diamond epitaxial layer, the p-type diamond terminal protection area and the 4H-SiC drift layer surface
Form the first passivation layer；
Ohmic contact metal layer is formed below the 4H-SiC substrate；
First passivation layer described in etched portions drifts about until leaking out the 4H-SiC drift layer in the 4H-SiC of leakage
Layer surface forms Schottky contact metal layer；
The first contact layer is formed on the Schottky contact metal layer；
The second contact layer is formed below the ohmic contact metal layer；
On part first contact layer, part first passivation layer and the part Schottky contact metal layer
The second passivation layer is formed, to complete the preparation of 4H-SiC Schottky diode.
In one embodiment of the invention, 4H-SiC drift layer is formed on 4H-SiC substrate, comprising:
To be formed on the 4H-SiC substrate with a thickness of 10~30 μm, Doped ions be N ion, doping concentration be 5 ×
1014cm-3~1 × 1016cm-3N-type described in 4H-SiC drift layer.
In one embodiment of the invention, p-type diamond epitaxial layer and p-type are formed in the 4H-SiC drift layer
Diamond terminal protection area, comprising:
Etching forms the trench area 4H-SiC on the 4H-SiC drift layer；
The p-type diamond epitaxial layer and the p-type diamond terminal protection are formed in the trench area 4H-SiC
Area.
In one embodiment of the invention, the depth of the trench area 4H-SiC is 0.3 μm~1.0 μm.
In one embodiment of the invention, using chemical vapour deposition technique, the P is formed in the trench area 4H-SiC
Type diamond epitaxial layer and the p-type diamond terminal protection area, comprising:
Using chemical vapor deposition process, 900 DEG C~1200 DEG C at a temperature of, formed in the trench area 4H-SiC
The p-type diamond epitaxial layer and the p-type diamond terminal protection area.
In one embodiment of the invention, the p-type diamond epitaxial layer includes multiple first Buddha's warrior attendants arranged in parallel
Stone strip shape body, the width of the first diamond strip shape body are 4 μm, and the spacing of the adjacent first diamond strip shape body is 3 μm.
In one embodiment of the invention, the p-type diamond terminal protection area includes multiple arranged in parallel second
The width of diamond strip shape body, the second diamond strip shape body is 4 μm, and the spacing of the adjacent second diamond strip shape body is
2μm。
In one embodiment of the invention, first passivation layer is SiO2Passivation layer, second passivation layer is poly-
Acid imide passivation layer.
In one embodiment of the invention, first contact layer is Al contact layer, and second contact layer connects for Ag
Contact layer.
Another embodiment of the present invention provides a kind of 4H-SiC Schottky diode that Surge handling capability is enhanced, institutes
It states 4H-SiC Schottky diode and is prepared by the method any in above-described embodiment and formed.
Compared with prior art, the present invention at least has the advantages that
1. the present invention prepares p-type diamond epitaxial layer using chemical vapour deposition technique, it is brilliant to avoid ion implanting bring
Lattice damage problem；
2. p-type diamond epitaxial layer prepared by the present invention can be with Ti schottky junctions under 450 DEG C, 3min rapid thermal annealing
Touching metal layer forms excellent ohmic contact characteristic, and ohmic contact resistance can achieve 10-6Ω·cm2.Meanwhile the temperature
Facilitate the adjustment of schottky region barrier height.
3. Schottky diode can guarantee that device can be significant under normal static characteristic among prepared by the present invention
Promote Surge handling capability.
Detailed description of the invention
Below in conjunction with attached drawing, specific embodiments of the present invention will be described in detail.
Fig. 1 is a kind of cross section structure schematic diagram of 4H-SiC Schottky diode of the prior art；
Fig. 2 is a kind of preparation for the 4H-SiC Schottky diode that Surge handling capability is enhanced provided in an embodiment of the present invention
The flow diagram of method；
Fig. 3 is a kind of section for the 4H-SiC Schottky diode that Surge handling capability is enhanced provided in an embodiment of the present invention
Structural schematic diagram.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 2 is referred to, Fig. 2 is a kind of 4H-SiC Schottky two that Surge handling capability is enhanced provided in an embodiment of the present invention
The flow diagram of the preparation method of pole pipe.
A kind of preparation method of 4H-SiC Schottky diode that Surge handling capability is enhanced is present embodiments provided, specifically
The following steps are included:
Step 1: 4H-SiC drift layer is formed on 4H-SiC substrate.
Growth thickness is 10~30 μm on 4H-SiC substrate, Doped ions N ion, doping concentration are 5 × 1014cm-3
~1 × 1016cm-3N-type 4H-SiC drift layer.
The doping concentration of the N-type 4H-SiC drift layer of the present embodiment is preferably 5 × 1015cm-3。
It should be noted that before growing 4H-SiC drift layer, it is also necessary to it is clear to carry out standard RCA to 4H-SiC substrate
It washes, the purpose of cleaning is to remove the natural oxide and other impurities on 4H-SiC substrate.
Step 2: p-type diamond epitaxial layer and p-type diamond terminal protection area are formed in 4H-SiC drift layer.
Further, step 2 the following steps are included:
Step 21: etching forms the trench area 4H-SiC on 4H-SiC drift layer.
Specifically, work is etched using reaction coupled plasma (Inductively Coupled Plasma, abbreviation ICP)
Skill etches 4H-SiC drift layer, and the trench area 4H-SiC is formed in 4H-SiC drift layer.
Further, electron cyclotron resonace (Electron cyclotron resonance, abbreviation ECR) can also be used
Etching technics to form the trench area 4H-SiC to etch.
In a specific embodiment, the depth of the trench area 4H-SiC is 0.3 μm~1.0 μm.
In a specific embodiment, the plan view shape of the trench area 4H-SiC is bar shaped.
Step 22: p-type diamond epitaxial layer and p-type diamond terminal protection area are formed in the trench area 4H-SiC.
Further, using chemical vapor deposition process, P-type dopant is deposited in the trench area 4H-SiC, forms p-type gold
Hard rock epitaxial layer and p-type diamond terminal protection area, wherein reaction temperature is 900 DEG C~1200 DEG C, and reaction gas is methane
And hydrogen.
Further, the P-type dopant can be boron or aluminium.
Further, the concentration of P-type dopant is 1 × 1018cm-3~1 × 1019cm-3。
Further, p-type diamond epitaxial layer includes multiple first diamond strip shape bodies arranged in parallel, the first diamond
The width of strip shape body is 4 μm, and the spacing of adjacent first diamond strip shape body is 3 μm.
Further, p-type diamond terminal protection area includes multiple second diamond strip shape bodies arranged in parallel, the second gold medal
The width of hard rock strip shape body is 4 μm, and the spacing of adjacent second diamond strip shape body is 2 μm.
In a specific embodiment, the preparation in p-type diamond epitaxial layer and p-type diamond terminal protection area is completed
Afterwards, entire sample is chemically-mechanicapolish polished.
Step 3: forming the in p-type diamond epitaxial layer, p-type diamond terminal protection area and 4H-SiC drift layer surface
One passivation layer.
Further, first passivation layer is SiO2。
Specifically, using low-pressure chemical vapor deposition process, in the reaction pressure of 600mTorr, 700 DEG C of reaction temperature
Under, SiO is formed in p-type diamond epitaxial layer, p-type diamond terminal protection area and 4H-SiC drift layer surface2Passivation layer,
In, SiO2Passivation layer with a thickness of 1 μm~2 μm.
Step 4: forming ohmic contact metal layer below 4H-SiC substrate；
Specifically, using magnetron sputtering or electron beam evaporation process, Ni Ohmic contact is formed below 4H-SiC substrate
Metal layer, wherein Ni ohmic contact metal layer with a thickness of 200nm, annealing temperature is 1000 DEG C, annealing time 3min.
Step 5: the first passivation layer of etched portions is until leaking out 4H-SiC drift layer, in the 4H-SiC drift layer surface of leakage
Form Schottky contact metal layer.
Specifically, using magnetron sputtering or electron beam evaporation process, the first passivation layer of etched portions to 4H-SiC drifts about
On layer, Ti Schottky contact metal layer is formed in 4H-SiC drift layer surface.
Further, the preparation of Ti schottky metal layer may comprise steps of:
Step 51: in SiO2Passivation layer surface photoetching Schottky contact area.
5min is toasted firstly, sample is placed on 200 DEG C of hot plate；Then, in SiO2Photoresist is carried out on passivation layer
Gluing and whirl coating, whirl coating revolving speed is 3500r/min, and sample is placed on 90 DEG C of hot plate and toasts 1min；Then, sample is put
Enter in litho machine, by having formulated domain lithographic definition Schottky contact area, to SiO2The photoresist of passivation layer surface carries out
Exposure；Finally, being put into the sample after exposing is completed to remove the photoresist in Schottky contact area in developer solution, and to it
It carries out ultrapure water and is dried with nitrogen；
Step 52: vapor deposition schottky metal.
The sample for completing photoetching is put into magnetron sputtering coater, after vacuum degree reaches, starts that Schottky gold is deposited
Belong to Ti；
Step 53: the preparation of Schottky contact metal is completed in stripping metal and annealing.
Sample after completion plated film is impregnated at least 40min in acetone, is ultrasonically treated；Then sample is put into temperature
Degree is heating water bath 5min in 60 DEG C of stripper；Then, sample is sequentially placed into acetone soln and ethanol solution ultrasonic clear
Wash 3min；Finally, with ultrapure water sample and with being dried with nitrogen；Finally, sample is put into quick anneal oven, to annealing furnace
In be passed through 10min nitrogen, then in nitrogen atmosphere will annealing furnace temperature be set as 450 DEG C, carry out the rapid thermal annealing of 3min so that
Schottky metal on Schottky contact area sinks, to form the Europe of Schottky contact metal Yu N-type 4H-SiC drift layer
Nurse contact, completes the production of Schottky contacts.
Further, Ti Schottky contact metal layer with a thickness of 300nm.
Step 6: the first contact layer is formed on Schottky contact metal layer.
Further, first contact layer is Al contact layer.
Further, using electron beam evaporation process, Al contact layer is formed, on Schottky contact metal layer with a thickness of 3 μ
M~6 μm.
Specifically: sample is put into electron beam evaporation platform, the reaction chamber vacuum degree to electron beam evaporation platform reaches 2 ×
10-6After Torr, Al is evaporated on Schottky contact metal layer, forms Al contact layer.
Step 7: the second contact layer is formed below ohmic contact metal layer.
Further, second contact layer is Ag contact layer.
Further, using electron beam evaporation process, Ag contact layer is formed below ohmic contact metal layer.
Specifically: sample is put into electron beam evaporation platform, the reaction chamber vacuum degree to electron beam evaporation platform reaches 2 ×
10-6After Torr, Ag is evaporated below ohmic contact metal layer, forms Ag contact layer.
Step 8: first contact layer, part first passivation layer and part the Schottky contacts gold in part
Belong to and form the second passivation layer on layer, to complete the preparation of 4H-SiC Schottky diode.
Further, second passivation layer is polyimide passivation layer.
Specifically, in the part Al contact layer, the part SiO2Passivation layer and part the Schottky contacts gold
Belong to spin-on polyimide on layer, form polyimide passivation layer, completes the preparation of 4H-SiC Schottky diode.
Fig. 3 is referred to, Fig. 3 is a kind of 4H-SiC Schottky two that Surge handling capability is enhanced provided in an embodiment of the present invention
The cross section structure schematic diagram of pole pipe.The embodiment of the invention also provides a kind of 4H-SiC Schottky two that Surge handling capability is enhanced
Pole pipe.4H-SiC Schottky diode includes: Ag contact layer 1, ohmic contact metal layer 2,4H-SiC substrate 3,4H-SiC drift
Layer 4, Schottky contact metal layer 5, Al contact layer 6, SiO2Passivation layer 7, p-type diamond epitaxial layer 8, p-type diamond terminal are protected
Protect area 9, polyimide passivation layer 10；
Schottky contact metal layer 5,4H-SiC drift layer 4,4H-SiC substrate 3, ohmic contact metal layer 2, Ag contact layer 1
It is stacked gradually from top to bottom on Al contact layer 6；
Meanwhile SiO2Setting is fluted in passivation layer 7, and Schottky contact metal layer 5 is located in groove；
P-type diamond epitaxial layer 8 and p-type diamond terminal protection area 9 are located in 4H-SiC drift layer 4；
Second passivation layer 10 is located at part Al contact layer 6, part SiO2Passivation layer 7 and part Schottky contact metal layer
On 5.
The present embodiment has the beneficial effect that:
1. the present invention prepares p-type diamond epitaxial layer using chemical vapour deposition technique, it is brilliant to avoid ion implanting bring
Lattice damage problem；
2. p-type diamond epitaxial layer prepared by the present invention can be with Ti schottky junctions under 450 DEG C, 3min rapid thermal annealing
Touching metal layer forms excellent ohmic contact characteristic, and ohmic contact resistance can achieve 10-6 Ω cm2.Meanwhile the temperature
Also contribute to the adjustment of schottky region barrier height.The technological means can guarantee that device can be shown under normal static characteristic
It writes and promotes Surge handling capability.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (10)
1. a kind of preparation method for the 4H-SiC Schottky diode that Surge handling capability is enhanced, which is characterized in that including following
Step:
4H-SiC drift layer is formed on 4H-SiC substrate；
P-type diamond epitaxial layer and p-type diamond terminal protection area are formed in the 4H-SiC drift layer；
It is formed in the p-type diamond epitaxial layer, the p-type diamond terminal protection area and the 4H-SiC drift layer surface
First passivation layer；
Ohmic contact metal layer is formed below the 4H-SiC substrate；
First passivation layer described in etched portions is until leaking out the 4H-SiC drift layer, in the 4H-SiC drift layer table of leakage
Face forms Schottky contact metal layer；
The first contact layer is formed on the Schottky contact metal layer；
The second contact layer is formed below the ohmic contact metal layer；
It is formed on part first contact layer, part first passivation layer and the part Schottky contact metal layer
Second passivation layer, to complete the preparation of 4H-SiC Schottky diode.
2. the preparation method of the enhanced 4H-SiC Schottky diode of Surge handling capability according to claim 1, special
Sign is, 4H-SiC drift layer is formed on 4H-SiC substrate, comprising:
To be formed on the 4H-SiC substrate with a thickness of 10~30 μm, Doped ions be N ion, doping concentration be 5 ×
1014cm-3~1 × 1016cm-3N-type described in 4H-SiC drift layer.
3. the preparation method of the enhanced 4H-SiC Schottky diode of Surge handling capability according to claim 1, special
Sign is, p-type diamond epitaxial layer and p-type diamond terminal protection area are formed in the 4H-SiC drift layer, comprising:
Etching forms the trench area 4H-SiC on the 4H-SiC drift layer；
The p-type diamond epitaxial layer and the p-type diamond terminal protection area are formed in the trench area 4H-SiC.
4. the preparation method of the enhanced 4H-SiC Schottky diode of Surge handling capability according to claim 3, special
Sign is that the depth of the trench area 4H-SiC is 0.3 μm~1.0 μm.
5. the preparation method of the enhanced 4H-SiC Schottky diode of Surge handling capability according to claim 3, special
Sign is, forms the p-type diamond epitaxial layer and the p-type diamond terminal protection area in the trench area 4H-SiC,
Include:
Using chemical vapor deposition process, 900 DEG C~1200 DEG C at a temperature of, formed in the trench area 4H-SiC described in
P-type diamond epitaxial layer and the p-type diamond terminal protection area.
6. the preparation method of the enhanced 4H-SiC Schottky diode of Surge handling capability according to claim 5, special
Sign is that the p-type diamond epitaxial layer includes multiple first diamond strip shape bodies arranged in parallel, first diamond strips
The width of shape body is 4 μm, and the spacing of the adjacent first diamond strip shape body is 3 μm.
7. the preparation method of the enhanced 4H-SiC Schottky diode of Surge handling capability according to claim 5, special
Sign is that the p-type diamond terminal protection area includes multiple second diamond strip shape bodies arranged in parallel, second Buddha's warrior attendant
The width of stone strip shape body is 4 μm, and the spacing of the adjacent second diamond strip shape body is 2 μm.
8. the preparation method of the enhanced 4H-SiC Schottky diode of Surge handling capability according to claim 1, special
Sign is that first passivation layer is SiO2Passivation layer, second passivation layer are polyimide passivation layer.
9. the preparation method of the enhanced 4H-SiC Schottky diode of Surge handling capability according to claim 1, special
Sign is that first contact layer is Al contact layer, and second contact layer is Ag contact layer.
10. a kind of 4H-SiC Schottky diode that Surge handling capability is enhanced, which is characterized in that the 4H-SiC Schottky two
Pole pipe is prepared by method according to any one of claims 1 to 9 and is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811063584.1A CN109449085A (en) | 2018-09-12 | 2018-09-12 | A kind of 4H-SiC Schottky diode and preparation method thereof that Surge handling capability is enhanced |
Applications Claiming Priority (1)
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