CN108565222A - A kind of variety lateral doping junction termination structures production method of SiC device - Google Patents
A kind of variety lateral doping junction termination structures production method of SiC device Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000001039 wet etching Methods 0.000 claims abstract description 26
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 22
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 22
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000002347 injection Methods 0.000 claims abstract description 7
- 239000007924 injection Substances 0.000 claims abstract description 7
- 230000000873 masking effect Effects 0.000 claims abstract description 7
- 230000007423 decrease Effects 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 150000002500 ions Chemical class 0.000 claims description 37
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 238000002513 implantation Methods 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 13
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 21
- 229910010271 silicon carbide Inorganic materials 0.000 description 20
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/426—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/298—Semiconductor material, e.g. amorphous silicon
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Abstract
The invention discloses a kind of variety lateral doping junction termination structures production methods of SiC device in field of semiconductor devices, include the following steps：1）Clean SiC semiconductor device；2）In the SiC device surface deposition dielectric layer SiO2；3）Lithographic definition dielectric layer SiO2, opening is formed among photoresist, the mask as subsequent etching dielectric layer；4）Wet etching dielectric layer SiO2, using the isotropic etching characteristic of wet etching, formed from the ramp structure for being open and being gradually increased to thickness of two sides, the barrier layer as subsequent ion injection；5）Remove photoresist；6）P-type doping is formed by masking layer high temperature Al ion implantings, form the knot terminal expansion structure for the variety lateral doping that junction depth continuously decreases outward from device inside, this invention simplifies device preparation technologies, technology difficulty and process costs are reduced while effectively improving device electric breakdown strength, can be used in power electronic system.
Description
Technical field
The present invention relates to a kind of semiconductor devices, more particularly to a kind of manufacturing method of semiconductor device.
Background technology
Power electronic technique is that electric energy is converted and controlled using the power electronic devices such as such as thyristor, GTO, IGBT
An electronic technology, current energy development and utilize in play very important effect.Currently, traditional silicon substrate electric power
The performance indicator level of electronic device is maintained essentially at 109-1010W Hz have approached silicon materials because parasitic diode restricts
And the attainable limit.In order to break through the current device limit, it is typically chosen the semiconductor made of wide band gap material
Device, such as silicon carbide（SiC）Or gallium nitride（GaN）Device.
Carbofrax material has excellent physically and electrically characteristic, with its wide energy gap, high thermal conductivity, big full
With the particular advantages such as drift velocity and high critical breakdown electric field, becomes and make high-power, high frequency, high temperature resistant, radioresistance device
Ideal semiconductor material.The breakdown voltage of silicon carbide power electronic device can reach ten times of silicon device, and conducting resistance is only
For tens of points of silicon device one, switching speed is fast, and thermal conductivity is high, and electric energy transition loss is small, and cooling system is simple, finally makes whole
The volume and weight of a system significantly reduces.Current semiconductor applications are had become with power electronic devices prepared by SiC material
One of hot spot device and research frontier are the mostly important developing direction of power electronic technique, in military and civilian field
It is with important application prospects.
In power electronic system, the characteristic of power electronic devices plays the realization and improvement of system performance most important
Effect.Edge highfield caused by depending greatly on knot curvature due to the breakdown voltage of device, in order to slow
The electric field for solving the knot edge of surface termination is concentrated, and the actual breakdown voltage of device is improved, and needs to carry out knot terminal knot to device
The design of structure.Junction termination structures include mainly field plate（FP）, field limiting ring（FLR）, knot terminal extend（JTE）Deng.At planar junction end
In the technology of end, field plate techniques are limited to the promotion of pressure resistance, cannot reach resistance to pressure request；Field limiting ring technology can reach resistance to pressure request,
But its to interannular away from too sensitive, device design and processes difficulty is big；The breakdown efficiency highest of JTE, in SiC power electronics devices
There is very extensive application in part structure.
In the preparation of SiC device junction termination structures, there are a figure of merit concentration, the figure of merit concentration and N in the areas p-type JTE-Drift
The concentration for moving layer is related, and generally 1017cm-3The order of magnitude is labeled as P-Area.There are one very typical contradictions for tool in single area JTE
Relationship：When JTE dosage is very high, a new electric field spike can be formed in the edges JTE so that device is hit herein
It wears；When JTE dosage is too low, and the protection to main knot edge can be weakened so that device punctures here.This is solved to close contradiction
The method of system is exactly the JTE structures using multi-region.The JTE of multi-region no longer has unified dosage, but close to agent at main knot
Amount is high, to enhance its protection to main knot；Far from main knot end, dosage is low, to reduce spike electric field herein.Even if by more
Area's junction terminal extension technology can reduce sensibility of the device electric breakdown strength to JTE concentration, but in device fabrication process, equally
The Al ion implantings of various dose twice or more are needed to form multiple knot terminal elongated areas, which increases techniques
Complexity, to increase cost of manufacture.
Accordingly, it is desirable to provide a kind of SiC device junction termination structures production method, while improving the breakdown voltage of device
Simplification of flowsheet reduces technology difficulty and process costs.
Invention content
The object of the present invention is to provide a kind of variety lateral doping junction termination structures production methods of SiC device, utilize wet method
The isotropic etching characteristic of etching forms and has acclive ion implanting masking layer, because the different barrier layer of thickness is to note
The barrier effect for entering ion is different, the knot terminal expansion structure with variety lateral doping can be formed after ion implanting, using one
Secondary Al ion implantings can form the P of variety lateral doping-Knot terminal expansion structure had both played property identical with multi-region JTE
Energy effect in turn avoids the multiple Al ion implantings during multi-region JTE makes, simplifies device preparation technology, effectively improving device
Technology difficulty and process costs are reduced while part breakdown voltage.
The object of the present invention is achieved like this：A kind of variety lateral doping junction termination structures production method of SiC device, packet
Include following steps：
1）Clean SiC semiconductor device；
2）In the SiC device surface deposition dielectric layer SiO2；
3）Lithographic definition dielectric layer SiO2, opening is formed among photoresist, the mask as subsequent etching dielectric layer；
4）Wet etching dielectric layer SiO2, using the isotropic etching characteristic of wet etching, formation is open from described to both sides
The ramp structure that thickness gradually increases, the barrier layer as subsequent ion injection；
5）Remove photoresist；
6）P-type doping is formed by masking layer high temperature Al ion implantings, forms the cross that junction depth continuously decreases outward from device inside
To the knot terminal expansion structure of varying doping.
As further limiting for the present invention, the P-The doping concentration of knot terminal expansion structure be less than or equal to 1.0 ×
1018cm-3。
As further limiting for the present invention, the P-The junction depth of knot terminal expansion structure uniformly drops outward from device inside
It is low.
As further limiting for the present invention, the P-The junction depth of knot terminal expansion structure is from device inside outward by 0.5 μ
M is gradually reduced to 0.
As further limiting for the present invention, the SiO2Ranging from 2 °~45 ° of medium inclination layer can be situated between by controlling
Thickness, consistency and the wet etching time of matter layer control inclination angle.
As further limiting for the present invention, the wet etching is with the mixed of hydrofluoric acid solution or hydrofluoric acid and ammonium fluoride
Conjunction liquid is main etching solution.
As further limiting for the present invention, the wet etching time is -30 minutes 1 minute.
As further limiting for the present invention, the Al ion implantings include：
The Al ion implantings of different-energy and dosage combination are carried out at a temperature of 300~500 DEG C, Implantation Energy is ranging from：10~
700KeV, implantation dosage ranging from 1 × 1013~1 × 1015cm-2；
In 1500 DEG C ~ 1700 DEG C temperature ranges, the ion-activated annealing of Al of 10~30min is carried out in ar gas environment, obtains P-
Knot terminal expansion structure.
Compared with prior art, the beneficial effects of the present invention are：
The present invention utilizes the isotropic etching characteristic of wet etching, forms the ion implanting masking layer with certain slope, leads to
It crosses masking layer and carries out ion implanting, because the different barrier layer of thickness is different to the barrier effect for injecting ion, to form cross
To the knot terminal expansion structure of varying doping, in the present invention, it can be formed using an Al ion implanting and be mixed with laterally change
Miscellaneous P-Knot terminal expansion structure had both played effect identical with multi-region JTE, in turn avoided multiple during multi-region JTE makes
Al ion implantings, simplify device preparation technology, and technology difficulty and work are reduced while effectively improving device electric breakdown strength
Skill cost.The present invention can be used in power electronic system.
Description of the drawings
Fig. 1 shows the SiC device diagrammatic cross-section with variety lateral doping knot terminal expansion structure.
Fig. 2 shows the structural schematic diagrams of SiC device.
Fig. 3 shows that device surface deposits SiO2Structural schematic diagram.
Fig. 4 shows SiO2Surface coats the schematic diagram after photoresist and photoetching.
Fig. 5 is shown using photoresist as etch mask, to dielectric layer SiO2Schematic diagram after progress wet etching.
Fig. 6 is the dielectric layer SiO that device surface residue has ramped shaped2Schematic diagram
Fig. 7 is shown with dielectric layer SiO2Ion implanting rear surface, which is carried out, for mask is formed by the extension of variety lateral doping P- knot terminals
The diagrammatic cross-section of structure.
Fig. 8 is the production flow diagram of variety lateral doping knot terminal expansion structure in SiC devices in embodiment.
Specific implementation mode
In order to illustrate more clearly of the present invention, the present invention is done further with reference to preferred embodiments and drawings
It is bright.Similar component is indicated with identical reference numeral in attached drawing.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
It is formed to doping parameters excessively sensitivity and using the Al ion implantings of multiple various dose for single area JTE structures
The P of multi-region-Technology difficulty and process costs relatively high problem when the areas-JTE, the present invention are tied using the JTE of variety lateral doping
Structure, and an available Al ion implanting can form the variety lateral doping P of junction depth gradual change-- JTE structures.
The purpose of the present invention is to provide a kind of variety lateral doping junction termination structures production methods of SiC semiconductor device.
In order to achieve the above objectives, the present invention uses following technical proposals：
As shown in figure 8, a kind of variety lateral doping junction termination structures production method of SiC device, includes the following steps：
Clean SiC semiconductor device；
In the SiC device surface deposition dielectric layer SiO2；
Lithographic definition dielectric layer SiO2, opening is formed among photoresist, the mask as subsequent etching dielectric layer；
Wet etching dielectric layer SiO2, using the isotropic etching characteristic of wet etching, formed and be open from described to both sides thickness
The ramp structure gradually increased is spent, the barrier layer as subsequent ion injection；
Remove photoresist；
P-type doping is formed by masking layer high temperature Al ion implantings, it is whole to form the knot that junction depth continuously decreases outward from device inside
Hold expansion structure；
In the present invention, using the isotropic etching characteristic of wet etching, after wet etching, as ion implanting barrier layer
SiO2Certain gradient can be obtained, to form the sloping ion implanting barrier layer of tool.When carrying out Al ion implantings, due to oblique
Different-thickness position is different to the blocking capability of Al ions in the dielectric layer of slope, so that SiC device surface is made to be mixed
The different p type island region domain of miscellaneous dosage, that is, form the knot terminal extended area of variety lateral doping structure.
Preferably, the P-The doping concentration of knot terminal expansion structure is less than or equal to 1.0 × 1018cm-3。
Preferably, the P-The junction depth of knot terminal expansion structure uniformly reduces outward from device inside.
Preferably, the P-The junction depth of knot terminal expansion structure is gradually reduced to 0 by 0.5 μm outward from device inside.
Preferably, the SiO2Ranging from 2 °~45 ° of medium inclination layer, can be by controlling the thickness of dielectric layer, densification
Degree and wet etching time control inclination angle.
Preferably, the wet etching is molten mainly to etch with the mixed liquor of hydrofluoric acid solution or hydrofluoric acid and ammonium fluoride
Liquid.
Preferably, the wet etching time is -30 minutes 1 minute.
Preferably, described inject includes：
The Al ion implantings of different-energy and dosage combination are carried out at a temperature of 300~500 DEG C, Implantation Energy is ranging from：10~
700KeV, implantation dosage ranging from 1 × 1013~1 × 1015cm-2；
In 1500 DEG C ~ 1700 DEG C temperature ranges, the ion-activated annealing of Al of 10~30min is carried out in ar gas environment, obtains P-
Knot terminal expansion structure.
Embodiment 1
As illustrated in figs. 2-7, the variety lateral doping knot terminal expansion structure production method of a kind of SiC device, is as follows：
Step 1：In 1 surface PECVD dielectric layer depositeds 2 of SiC device, dielectric layer 2 is by SiO2Material is constituted；The thickness of dielectric layer 2
For 100nm~2 μm；
Step 2：In SiO22 surface of dielectric layer coats a layer photoresist 3, and is carried out at photoetching, development and carbonization using mask
Reason；Photoresist after exposure carries out barrier layer of the high temperature cabonization as wet etching dielectric layer；
Step 3：Using the photoresist having been cured, i.e. barrier layer, wet etching is carried out to dielectric layer 2；The wet etching
With the mixed liquor of hydrofluoric acid solution or hydrofluoric acid and ammonium fluoride for main etching solution, the time of the wet etching is 1 point
Clock -30 minutes, due to the isotropic etching characteristic of wet etching, after wet etching, dielectric layer can obtain certain gradient, from
And slope dielectric layer is formed, the barrier layer as follow-up Al ion implantings；
Step 4：High temperature Al ion implantings form p-type doping, carried out at a temperature of 400 DEG C the Al of different-energy and dosage combination from
Son injection, Implantation Energy are respectively：500KeV、280KeV、30KeV；Implantation dosage is respectively 7.8 × 1014cm-2、5.2×
1014cm-2、8.6×1013cm-2, due to the difference of barrier layer thickness, the blocking degree to injecting Al ions will be different, therefore
The second conductivity type regions of the variety lateral doping structure of junction depth gradual change can be formed in this region；
It should be noted that Al ion implantings are not limited to the injection form in the present invention, different zones in the present invention can be met and adulterated
Concentration, such as：At a temperature of 400 DEG C, the energy of Al ion implantings is 30kev to 550kev；The energy packet of the injection
Include 30keV, 70keV, 100keV, 136keV, 150keV, 215keV, 307keV, 412keV and 550keV；The energy corresponds to
Implantation dosage be respectively 2 × 1014cm-2、2.6×1014cm-2、3.5×1014cm-2、6.5×1014cm-2、5.2×1013cm-2、
7.7×1013cm-2、9×1013cm-2、1.02×1014cm-2With 1.67 × 1014cm-2。
Step 5：Remove photomask surface glue, in 1500 DEG C to 1700 DEG C temperature ranges, in inert gas such as argon atmospher
In enclosing, the activation annealing after Al ion implantings is carried out, the P of doping concentration gradual change is obtained-Knot terminal expansion area.
Step 6：Front back metal is made, the preparation of device is completed, obtains product as shown in Figure 1.
The invention is not limited in above-described embodiments, on the basis of technical solution disclosed by the invention, the skill of this field
For art personnel according to disclosed technology contents, one can be made to some of which technical characteristic by not needing performing creative labour
A little to replace and deform, these are replaced and deformation is within the scope of the invention.
Claims (8)
1. a kind of variety lateral doping junction termination structures production method of SiC device, which is characterized in that include the following steps：
1）Clean SiC semiconductor device；
2）In the SiC device surface deposition dielectric layer SiO2；
3）Lithographic definition dielectric layer SiO2, opening is formed among photoresist, the mask as subsequent etching dielectric layer；
4）Wet etching dielectric layer SiO2, using the isotropic etching characteristic of wet etching, formed and be open from described to both sides thickness
The ramp structure gradually increased is spent, the barrier layer as subsequent ion injection；
5）Remove photoresist；
6）P-type doping is formed by masking layer high temperature Al ion implantings, forms the cross that junction depth continuously decreases outward from device inside
To the knot terminal expansion structure of varying doping.
2. a kind of variety lateral doping junction termination structures production method of SiC device according to claim 1, feature exist
In the P-The doping concentration of knot terminal expansion structure is less than or equal to 1.0 × 1018cm-3。
3. a kind of variety lateral doping junction termination structures production method of SiC device according to claim 1, feature exist
In the P-The junction depth of knot terminal expansion structure uniformly reduces outward from device inside.
4. a kind of variety lateral doping junction termination structures production method of SiC device according to claim 1, feature exist
In the P-The junction depth of knot terminal expansion structure is gradually reduced to 0 by 0.5 μm outward from device inside.
5. a kind of variety lateral doping junction termination structures production method of SiC device according to claim 1, feature exist
In the SiO2Ranging from 2 °~45 ° of medium inclination layer can be carved by controlling thickness, consistency and the wet method of dielectric layer
The erosion time controls inclination angle.
6. a kind of variety lateral doping junction termination structures production method of SiC device according to claim 1, feature exist
In the wet etching is with the mixed liquor of hydrofluoric acid solution or hydrofluoric acid and ammonium fluoride for main etching solution.
7. a kind of variety lateral doping junction termination structures production method of SiC device according to claim 1, feature exist
In the wet etching time is -30 minutes 1 minute.
8. a kind of variety lateral doping junction termination structures production method of SiC device according to claim 1, feature exist
In the Al ion implantings include：
The Al ion implantings of different-energy and dosage combination are carried out at a temperature of 300~500 DEG C, Implantation Energy is ranging from：10~
700KeV, implantation dosage ranging from 1 × 1013~1 × 1015cm-2；
In 1500 DEG C ~ 1700 DEG C temperature ranges, the ion-activated annealing of Al of 10~30min is carried out in ar gas environment, obtains P-Knot
Termination extension structure.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310188A (en) * | 2019-07-23 | 2021-02-02 | 珠海格力电器股份有限公司 | Lateral variable doping terminal structure and manufacturing method thereof |
| CN112447820A (en) * | 2019-08-28 | 2021-03-05 | 飞锃半导体（上海）有限公司 | Chip terminal structure with gradually-changed junction depth and manufacturing method thereof |
| CN113223941A (en) * | 2021-04-28 | 2021-08-06 | 杰华特微电子股份有限公司 | Manufacturing method of transverse variable doping structure and transverse power semiconductor device |
| CN114300530A (en) * | 2022-03-09 | 2022-04-08 | 芯众享(成都)微电子有限公司 | Junction terminal structure of silicon carbide power device and preparation method thereof |
| CN114823857A (en) * | 2022-04-27 | 2022-07-29 | 中国工程物理研究院电子工程研究所 | Silicon carbide device junction-like lateral variable doped junction terminal structure and preparation method thereof |
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| US20060076612A1 (en) * | 2004-09-30 | 2006-04-13 | Seiji Otake | Semiconductor device and manufacturing method of the same |
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| CN113223941A (en) * | 2021-04-28 | 2021-08-06 | 杰华特微电子股份有限公司 | Manufacturing method of transverse variable doping structure and transverse power semiconductor device |
| CN113223941B (en) * | 2021-04-28 | 2024-05-24 | 杰华特微电子股份有限公司 | Manufacturing method of transverse variable doping structure and transverse power semiconductor device |
| CN114300530A (en) * | 2022-03-09 | 2022-04-08 | 芯众享(成都)微电子有限公司 | Junction terminal structure of silicon carbide power device and preparation method thereof |
| CN114823857A (en) * | 2022-04-27 | 2022-07-29 | 中国工程物理研究院电子工程研究所 | Silicon carbide device junction-like lateral variable doped junction terminal structure and preparation method thereof |
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