CN109427596A - Base of ceramic and preparation method thereof - Google Patents
Base of ceramic and preparation method thereof Download PDFInfo
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- CN109427596A CN109427596A CN201710790239.7A CN201710790239A CN109427596A CN 109427596 A CN109427596 A CN 109427596A CN 201710790239 A CN201710790239 A CN 201710790239A CN 109427596 A CN109427596 A CN 109427596A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 80
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 75
- 229910000679 solder Inorganic materials 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 23
- 238000003825 pressing Methods 0.000 claims description 22
- 238000005245 sintering Methods 0.000 claims description 18
- 238000007639 printing Methods 0.000 claims description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 9
- 238000005238 degreasing Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 238000003854 Surface Print Methods 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4864—Cleaning, e.g. removing of solder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The present invention relates to a kind of base of ceramic, and preparation method thereof, its production method includes: to print the first metal layer in the ceramic substrate first surface with via hole, second metal layer is printed in the second surface opposite with first surface, to form conducting wire and form pad area in first surface, and the thickness of second metal layer is greater than the thickness of the first metal layer, first surface printing solder layer.Package frame is attached on solder layer.The ceramet liner plate for being attached with package frame is sintered under vacuum conditions.The base of ceramic and preparation method thereof effectively reduces the residual stress due to caused by full page dissymmetrical structure, to effectively improve the angularity of base of ceramic, back-end client is facilitated to carry out the operations such as the encapsulation of chip full page, finished product cutting, to improve production yield and efficiency.
Description
Technical field
The present invention relates to the substrate manufacture manufacture fields for carrying semiconductor devices, in particular to a kind of ceramics
Pedestal, and preparation method thereof.
Background technique
Have at present without box dam base of ceramic production major technique: thick film technology and thin film technique.Thick film technology is to use silk screen
Printing process, which is transferred to conductor paste, resistance slurry and insulating materials slurry etc. on substrate, to be manufactured.The film of printing passes through
Drying is to remove volatile ingredient, and then exposure is sintered at a higher temperature with activated adhesive mechanism, completes film and substrate
Bonding；Thin film technique is a kind of subtracting techniques, and entire substrate is deposited with several metalization layers, then uses a series of photoetching processes
Unwanted material etches are fallen.
The base of ceramic of adhesion metal box dam makes, then after needing to complete ceramic substrate metallization, then carries out adhesion metal
Box dam.Metal box dam attachment at present is realized by sintering process.But the total metal mass with box dam face on potsherd is greater than
The problems such as another side total metal mass, sintered pedestal will appear big angularity, crack.
Summary of the invention
The purpose of the present invention is to provide a kind of base of ceramic and preparation method thereof, effectively to control and improve substrate warp
Degree facilitates back-end client to realize the progress of full page packaging process, to improve production efficiency.
Another object of the present invention is to provide a kind of base of ceramic to solve cutting action with lower angularity
The middle very poor big problem of depth of cut, to improve product yield.
The present invention is implemented as follows:
A kind of base of ceramic, and preparation method thereof, comprising: in the ceramic substrate first surface printing first with via hole
Metal layer prints second metal layer in the second surface opposite with first surface, to form conducting wire and in first surface shape
At pad area, and the thickness of second metal layer is greater than the thickness of the first metal layer, obtains ceramet liner plate, first surface and the
The distance between two surfaces are greater than or equal to 0.5mm.In first surface to printing solder layer on auxiliary frame pad area.By package frame
It is attached on solder layer.The ceramet liner plate for being attached with package frame is sintered under vacuum conditions.
Further, in presently preferred embodiments of the present invention, above-mentioned second metal layer thickness is greater than the first metal layer thickness, suitably
In numberical range, metal layer thickness difference is bigger, and base of ceramic angularity is lower.
Further, in presently preferred embodiments of the present invention, the ceramet liner plate for being attached with package frame was sintered
Cheng Zhong places pressing plate in first surface, and pressing plate has pressure surface, and pressure surface and first surface are located at except conducting wire region
Part is bonded.
Further, in presently preferred embodiments of the present invention, the weight of above-mentioned pressing plate is 40~120g.Pressing plate weight kicks the beam,
Fail to reach pressure effect；Pressing plate weight is excessive, and it is chipping to easily lead to pedestal.
Further, in presently preferred embodiments of the present invention, being sintered is the ceramet liner plate that will be attached with package frame
It is placed in vacuum sintering furnace and is sintered, sintering process includes temperature rise period, constant temperature stage and temperature-fall period.
Further, in presently preferred embodiments of the present invention, the temperature in above-mentioned constant temperature stage is 780~950 DEG C, constant temperature time
For 10~60min.
Further, in presently preferred embodiments of the present invention, the heating rate of above-mentioned temperature rise period is 2~10 DEG C/min.
Further, in presently preferred embodiments of the present invention, the rate of temperature fall of above-mentioned temperature-fall period is 1~10 DEG C/min.
Further, in presently preferred embodiments of the present invention, package frame is taken off before package frame is attached to solder layer
Rouge and deoxidation processing.
A kind of base of ceramic pedestal, is made by the production method of above-mentioned base of ceramic.
It is that the present invention realizes the utility model has the advantages that pass through the ceramic substrate with via hole first surface print the first metal
Layer prints second metal layer in the second surface opposite with first surface, is welded with forming conducting wire and being formed in first surface
Panel, and the thickness of second metal layer is greater than the thickness of the first metal layer, obtains ceramet liner plate.Above-mentioned second metal layer
Thickness is greater than the setting of the thickness of the first metal layer, the shrinkage stress of second metal layer during the sintering process is increased, to support
What a part of first surface package frame that disappears and solder layer cohesive process and the first metal layer contraction process generated ceramic substrate
Stress, so as to improve the angularity of base of ceramic, while ceramic substrate selects the distance between first surface and second surface
Ceramic substrate more than or equal to 0.5mm, thickness is larger, and ability of anti-deformation is preferable, sticks up to further enhance improvement
The effect of curvature.Therefore, it by the technologic setting of above-mentioned base of ceramic, effectively reduces since full page dissymmetrical structure draws
The residual stress risen facilitates the encapsulation of back-end client's chip full page, finished product to cut to effectively improve the angularity of base of ceramic
Equal operations are cut, to improve production yield and efficiency.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 be the embodiment of the present invention provide base of ceramic, and preparation method thereof flow chart；
Fig. 2 is the structural schematic diagram of the ceramic substrate for offering via hole in the embodiment of the present invention；
Fig. 3 is that printing forms conducting wire and pad area in the production method for the base of ceramic that the embodiment of the present invention provides
The structural schematic diagram of the ceramet liner plate formed afterwards；
Fig. 4 is the knot in the production method for the base of ceramic that the embodiment of the present invention provides after pad area printing solder layer
Structure schematic diagram；
Fig. 5 is the knot in the production method for the base of ceramic that the embodiment of the present invention provides after solder layer adheres to package frame
Structure schematic diagram；
Fig. 6 is sintering process in the production method for the UV LED inorganic encapsulated base of ceramic that the embodiment of the present invention provides
The middle structural schematic diagram for placing pressing plate.
Appended drawing reference summarizes: ceramic substrate 100；Via hole 110；First surface 120；Second surface 130；Ceramet lining
Plate 140；Conducting wire 200；The first metal layer 210；Second metal layer 220；To auxiliary frame pad area 230；Solder layer 300；Encapsulation
Frame 400；Pressing plate 500；Pressure surface 510；Groove 520.
Specific embodiment
The present invention is described in further detail below through specific implementation examples and in conjunction with the accompanying drawings.
Referring to attached drawing 1, and attached drawing 2-6 is participated in simultaneously, the base of ceramic and its production side that the embodiment of the present invention provides
Method, comprising:
S101, the ceramic substrate 100 with via hole 110 first surface 120 print the first metal layer 210, with
The opposite second surface 130 of first surface 120 prints second metal layer 220, to form conducting wire 200 and in first surface
120 form to auxiliary frame pad area 230, and the thickness of second metal layer 220 is greater than the thickness of the first metal layer 210, first surface
The distance between 120 and second surface 130 are greater than or equal to 0.5mm.
Referring to attached drawing 2, the ceramic substrate 100 selected in the present embodiment has via hole 110, and the quantity of via hole 110 is
It is multiple, it can according to need and open up.Via hole 110 is to be punched by laser-beam drilling machine to ceramic substrate 100, and formation runs through
The shape specification of the through-hole of first surface 120 and second surface 130, each through-hole is consistent, then passes through screen process press again
Conductive paste is filled into full multiple through-holes, so that the through-hole for filling up conductive paste constitutes connection first surface 120 and the second table
The via hole 110 in face 130.Wherein, the conductive paste of via hole 110 includes copper, silver and titanium, which is by raw material
Copper, silver and titanium are dissolved in the paste with certain viscosity formed in organic solvent.In the present embodiment, conductive paste uses alcohols
Organic solvent.In addition, viscosity of conductive paste under conditions of temperature is 25 DEG C and revolving speed is 20r/min is 40~200Pa
s.Therefore, the ceramic substrate 100 for offering via hole 110 in the present embodiment is by obtained by the above method.Certainly, other
It, can also be directly using the ceramic substrate 100 with via hole 110 in embodiment.
Wherein, the distance between the first surface 120 of ceramic substrate 100 and second surface 130 are greater than or equal to 5mm, i.e.,
The thickness of ceramic substrate 100 is greater than or equal to 5mm.By in this present embodiment, the thicker ceramic substrate 100 of use, thickness compared with
Greatly, ability of anti-deformation is stronger, therefore, can improve the finally formed pedestal for the encapsulation of inorganic full page to a certain extent
Angularity.
Specifically, referring to attached drawing 3, in the present embodiment, by screen process press ceramic substrate 100 first surface 120
The first metal layer 210 is printed, to be formed to auxiliary frame pad area 230, and is printed in the second surface 130 opposite with first surface 120
Brush second metal layer 220.The first metal layer 210 and second metal layer 220 collectively form the conducting wire on ceramic substrate 100
200, to obtain ceramet liner plate 140.The shape of conducting wire 200 is designed printing as needed.Wherein, after printing
The ceramet liner plate 140 of formation should make the thickness of second metal layer 220 be greater than the thickness of the first metal layer 210.This sets
It sets and increases the shrinkage stress of second metal layer 220 during the sintering process, to offset the package frame of a part of first surface 120
400 stress that ceramic substrate 100 is generated with 300 cohesive process of solder layer and 210 contraction process of the first metal layer, to change
It has been apt to the angularity of finally formed base of ceramic.
Specifically, the thickness of second metal layer 220 is 10~50 microns bigger than the thickness of the first metal layer 210.In the thickness
In range, it can more efficiently improve the angularity of the finally formed base of ceramic for the encapsulation of inorganic full page.
It should be noted that can first print phase simultaneously when printing the first metal layer 210 and second metal layer 220
The first metal layer 210 of stack pile and the second metal 220, then thickening operation is carried out to second metal layer 220, can also it reach
Identical effect.
S102, in first surface 120 to printing solder layer 300 on auxiliary frame pad area 230.
Specifically, in the present embodiment, by screen process press on to auxiliary frame pad area 230 printing solder layer 300.Solder
Layer 300 is the solder of paste.Referring to attached drawing 4, solder layer 300 is attached to the surface to auxiliary frame pad area 230.
In the present embodiment, the raw material for constituting solder layer 300 includes copper and silver, wherein quality hundred of the copper in metal component
Divide than being 20~50%, mass percent of the silver in metal component is 50~80%.The solder of composition solder layer 300 is will be former
Material copper, silver are dissolved in the paste with certain viscosity formed in organic solvent.In the present embodiment, which selects 1- benzene
Oxygroup -2- propyl alcohol.Certainly, in other embodiments, organic solvent, which can according to need, selects other alcohols.Constitute solder layer 300
Viscosity of solder under the conditions of temperature is 25 DEG C and revolving speed is 5r/min be 40~100Pas.
Printing solder layer 300 is carried out by screen process press, can accurately be printed to auxiliary frame pad area 230 well
The solder distribution of brush solder layer 300, solder layer 300 is relatively uniform, not will cause waste, and operation is more convenient, high-efficient, is convenient for
The subsequent frame and sintering process of covering can carry out well.
S103, package frame 400 is attached on solder layer 300.
Specifically, package frame 400 is cleaned before package frame 400 being attached to solder layer 300, mainly by package frame
400 be put into ultrasonic wave Ion Cleaning device containing being cleaned in heavy oil cleaning agent cleaning solution, to wash 400 table of package frame
The grease stain or spot in face.In the present embodiment, package frame 400 is kovar alloy frame.In other embodiments, or ceramic frame,
It need to only clean the spot on its surface, meanwhile, the material composition of above-mentioned solder layer 300 also will do it change.By right
The cleaning operation of package frame 400 enables package frame 400 preferably to be contacted with solder layer 300, and sintered effect
Fruit is more preferable.
In the present embodiment, position restriction is carried out to multiple package frames 400 by fixture, then solder layer 300 will be attached with
Ceramet liner plate 140 tips upside down in multiple package frames 400, serves as a contrast simultaneously with ceramet to realize to multiple package frames 400
The position of solder layer is accurately positioned on plate 140.Then again by fixture and ceramet liner plate 140 and 400 groups of multiple package frames
At component turn, take down fixture.Referring to attached drawing 5, after taking down fixture, multiple package frames 400 are attached to ceramet lining
It, can be stable by multiple package frames 400 after being sintered on the solder layer 300 that the first surface 120 of plate 140 is correspondingly arranged
It is fixed on ceramet liner plate 140.While being realized simultaneously to multiple package frame 400 well by above-mentioned mode
Docking attachment, so that production efficiency is higher, and positioning accuracy is more preferable.Certainly, in other embodiments, its other party can also be passed through
Multiple package frames 400 are sequentially placed on solder layer 300 by formula.In the present embodiment, package frame 400 is kovar alloy material.
S104, the ceramet liner plate 140 for being attached with package frame 400 is sintered under vacuum conditions.
Specifically, in the present embodiment, the ceramet liner plate 140 for being attached with package frame 400 is placed in vacuum sintering furnace
In be sintered.Sintering process includes temperature rise period, constant temperature stage and temperature-fall period.The temperature in constant temperature stage is 780~950
DEG C, sintering time is 10~60min.It is organic molten in paste in order to get rid of by the purpose that vacuum sintering furnace is sintered
Agent promotes paste and ceramic substrate 100, and solder layer 300 reacts with package frame 400, so that package frame 400 can be well
It is fixed on the surface of ceramet liner plate 140.And it is sintered in above-mentioned temperature range and time range, so that package frame
400 and very high to the binding force between auxiliary frame pad area 230, conducting wire 200 and ceramic substrate 100, to have more excellent
Good performance.
Wherein, the present embodiment heats up during being sintered to the ceramet liner plate 140 for being attached with package frame 400
Rate is controlled, so that the heating rate of temperature rise period is 2~10 DEG C/min.Rate of temperature fall is carried out after the constant temperature stage
Control, makes 1~10 DEG C/min of rate of temperature fall.So that reducing as much as possible due to first surface 120 and the second table
Residual stress caused by the uneven texture in face 130.
Further, referring to attached drawing 6, in the present embodiment, the ceramet liner plate 140 for being attached with package frame 400 is carried out
In sintering process, first surface 120 place pressing plate 500, pressing plate 500 have pressure surface 510, pressure surface 510 with first surface 120
Part fitting except 200 region of conducting wire.The face setting opposite with first surface 120 of pressing plate 500 is fluted
520, groove 520 can accommodate package frame 400, consequently facilitating push to ceramet liner plate 140, while avoid to leading
Electric line 200 damages.Therefore, it can be resisted as much as possible due to the first metal layer using the self gravity of pressing plate 500
210, package frame 400, the difference of 100 thermal expansion coefficient of ceramic substrate lead to the residual stress of 140 warpage of ceramet liner plate.This
In embodiment, the weight of pressing plate 500 is preferably 40~120g, so as to reach better pressing result.
It should be noted that shown in fig. 6 is the schematic diagram of the corresponding pressing plate 500 of package frame 400, specific to complete
Ceramet liner plate 140 there are multiple regions as shown in FIG. 6 compositions.Pressing plate 500 in Fig. 6 is only a package frame 400
The structural schematic diagram in the region at place.The pressing plate 500 of corresponding entire ceramet liner plate 140 is by including the pressing plate in multiple Fig. 6
Structure.
The present embodiment additionally provides a kind of base of ceramic, is made by the production method of above-mentioned base of ceramic.Pass through
The base of ceramic of this method production is reduced to 1 ‰ angularity by the angularity of existing pedestal 7.6 ‰.
In conclusion being greater than or equal to the thicker ceramic substrate 100 of 5mm by using thickness first, thickness is bigger,
Substrate non-deformability is better.Secondly, the second metal layer 220 to the conducting wire 200 for constituting ceramet liner plate 140 carries out
Optimization is being sintered so that the thickness of second metal layer 220 is greater than the thickness of the first metal layer 210 with increasing second metal layer 220
Shrinkage stress in the process, to offset the package frame 400 and 300 cohesive process of solder layer and the of a part of first surface 120
One metal layer, 210 contraction process improves the angularity of base of ceramic to the stress of ceramic substrate 100.Further, adhering to
The pressing plate 500 for placing constant weight in 140 sintering process of ceramet liner plate for having package frame 400 above it, utilizes pressing plate
Self gravity resisted as much as possible due to the first metal layer 210, package frame 400, the difference of 100 thermal expansion coefficient of ceramic substrate
Lead to the residual stress of 140 warpage of ceramet liner plate.In addition, also being burnt in the ceramet liner plate 140 for being attached with package frame 400
During knot, temperature rate is controlled, especially rate of temperature fall slows down, to reduce as far as possible due to first surface 120
Residual stress caused by uneven texture with second surface 130.
In short, above four kinds of approach mutually act synergistically and effectively reduce the remnants due to caused by full page dissymmetrical structure
Stress facilitates the full page of subsequent chip to encapsulate, improves packaging efficiency to effectively improve the angularity of base of ceramic.
Embodiment
Embodiment 1:
According to foregoing ceramic pedestal manufacture craft, on the ripe ceramic substrate first surface of aluminium nitride with a thickness of 0.5mm, lead to
Silk-screen printing technique is crossed, printing a layer thickness is the metal pattern of 20um and is dried；On ceramic substrate second surface, make
With identical printing technology, prints the metal pattern that a layer thickness is 30um and be dried.Then, the first metal layer pad area
Solder printing is completed using silk-screen printing technique, and adheres to package frame on solder layer in domain.
According to foregoing ceramic pedestal manufacture craft, under vacuum conditions to the base of ceramic of printed metal layer, auxiliary frame into
Row sintering.In this embodiment, vacuum degree is 5x10 when sintering-2Pa, sintering temperature are 890 DEG C, soaking time 40min.
Gained sample analysis result after sintering: angularity about 1.5 ‰, dark line about 3%, cutting effect be good, voidage is about after die bond
10%.
Embodiment 2:
In this embodiment, ceramic base plate surface second metal layer is still greater than the first metal layer.The first metal layer thickness
It is 40um, second metal layer with a thickness of 60um.In addition to this technique similarly to Example 1 makes base of ceramic, is analyzed
Evaluation.As a result shown in table 1.
Comparative example 1:
In this comparative example, the first and second metal layer thickness of ceramic base plate surface is identical.The first metal layer with a thickness of
20um, the second metal thickness are 20um.In addition to this technique similarly to Example 1 makes base of ceramic, is analyzed and evaluated.
Angularity is 7.6 ‰, and comparative example 1 all other evaluation indexes are obviously inferior to embodiment 1, and details result is shown in table 1.
Comparative example 2:
In this comparative example, the first and second metal layer thickness of ceramic base plate surface is identical.The first metal layer with a thickness of
40um, the second metal thickness are 40um.In addition to this technique similarly to Example 1 makes base of ceramic, is analyzed and evaluated.
Angularity is 6 ‰, all other evaluation indexes of comparative example 2 are obviously inferior to embodiment 2, as a result shown in table 1.
Table 1
Note: it is normal that "○" cuts metacoxal plate；" X " cuts metacoxal plate fragmentation.
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, above in conjunction in the embodiment of the present invention
Attached drawing, technical solution in the embodiment of the present invention clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention for usually describing and representing in attached drawing here is real
The component for applying example can be arranged and be designed with a variety of different configurations.
Therefore, the above detailed description to the embodiment of the present invention provided in the accompanying drawings is not intended to limit claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
In the description of the present invention, it should be noted that the orientation or positional relationship of the instructions such as term " on ", "lower" is base
In orientation or positional relationship shown in the drawings or the invention product using when the orientation or positional relationship usually put, only
It is that for the convenience of describing the present invention and simplifying the description, rather than the device or element of indication or suggestion meaning must have specifically
Orientation is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " the
Two ", " third " etc. is only used for distinguishing description, is not understood to indicate or imply relative importance.
In the description of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " setting " is answered
It is interpreted broadly.For the ordinary skill in the art, it can understand above-mentioned term in the present invention with concrete condition
Concrete meaning.
Claims (8)
1. a kind of production method of base of ceramic characterized by comprising
The first metal layer is printed in the ceramic substrate first surface with via hole, in second table opposite with the first surface
Second metal layer is printed in face, to form conducting wire and form pad area, and the second metal layer in the first surface
Thickness is greater than the thickness of the first metal layer, ceramet liner plate is obtained, between the first surface and the second surface
Distance be greater than or equal to 0.5mm；
In the first surface to printing solder layer on auxiliary frame pad area；
Package frame is attached on the solder layer；
The base of ceramic for being attached with the package frame is sintered under vacuum conditions.
2. the production method of base of ceramic according to claim 1, which is characterized in that the second metal layer thickness is greater than
The first metal layer is thick.
3. the production method of base of ceramic according to claim 1, which is characterized in that the ceramic substrate thickness be greater than or
Equal to 0.5mm, and substrate thickness is bigger, and pedestal warpage is smaller.
4. the production method of base of ceramic according to claim 1, which is characterized in that the ceramics of the attachment package frame
During metal backing is sintered, the first surface places pressing plate, and the pressing plate has a pressure surface, the pressure surface and described the
One surface is located at the fitting of the part except the conducting wire region.
5. the production method of base of ceramic according to claim 3, which is characterized in that the weight of the pressing plate be 40~
120g。
6. the production method of base of ceramic according to claim 1, which is characterized in that be sintered be will be attached with it is described
The ceramet liner plate of package frame, which is placed in vacuum sintering furnace, to be sintered, and sintering process includes temperature rise period, constant temperature stage
And temperature-fall period.
7. the production method of base of ceramic according to claim 1, which is characterized in that be attached to the package frame described
Degreasing is carried out to the package frame before solder layer and deoxidation is handled.
8. a kind of base of ceramic, which is characterized in that its production method as described in claim 1~6 any one is made.
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| CN112620852A (en) * | 2020-12-28 | 2021-04-09 | 瓷金科技(河南)有限公司 | Base framing device and base framing method |
| CN114582913A (en) * | 2022-02-16 | 2022-06-03 | Tcl华星光电技术有限公司 | Display panel manufacturing method and display panel |
| CN114582913B (en) * | 2022-02-16 | 2024-10-25 | Tcl华星光电技术有限公司 | Display panel manufacturing method and display panel |
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