CN109427526B - 离子束照射装置 - Google Patents

离子束照射装置 Download PDF

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Publication number
CN109427526B
CN109427526B CN201810532390.5A CN201810532390A CN109427526B CN 109427526 B CN109427526 B CN 109427526B CN 201810532390 A CN201810532390 A CN 201810532390A CN 109427526 B CN109427526 B CN 109427526B
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China
Prior art keywords
shield
ion beam
beam current
measuring instrument
current measuring
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CN201810532390.5A
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English (en)
Chinese (zh)
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CN109427526A (zh
Inventor
土肥正二郎
小野田正敏
高桥元喜
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Nisshin Ion Machine Co ltd
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Nisshin Ion Machine Co ltd
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Publication of CN109427526A publication Critical patent/CN109427526A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201810532390.5A 2017-08-31 2018-05-29 离子束照射装置 Active CN109427526B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017167552A JP6414763B1 (ja) 2017-08-31 2017-08-31 イオンビーム照射装置
JP2017-167552 2017-08-31

Publications (2)

Publication Number Publication Date
CN109427526A CN109427526A (zh) 2019-03-05
CN109427526B true CN109427526B (zh) 2020-07-31

Family

ID=64017094

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810532390.5A Active CN109427526B (zh) 2017-08-31 2018-05-29 离子束照射装置

Country Status (2)

Country Link
JP (1) JP6414763B1 (ja)
CN (1) CN109427526B (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216794A (ja) * 1988-07-05 1990-01-19 Canon Inc 電子機器
CN1638014A (zh) * 2004-01-06 2005-07-13 应用材料有限公司 离子束监测装置
JP2006196351A (ja) * 2005-01-14 2006-07-27 Seiko Epson Corp イオン注入装置及び半導体装置の製造方法
KR20090047952A (ko) * 2007-11-09 2009-05-13 주식회사 동부하이텍 주사 전자 현미경
CN102832094A (zh) * 2011-06-15 2012-12-19 日新离子机器株式会社 离子源和离子注入装置
CN104835710A (zh) * 2014-02-10 2015-08-12 斯伊恩股份有限公司 高能量离子注入装置、射束平行化器及射束平行化方法
CN107104030A (zh) * 2016-02-22 2017-08-29 日新离子机器株式会社 离子束照射装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999497U (ja) * 1982-12-23 1984-07-05 三菱電機株式会社 電気回路のしやへい装置
JP4605146B2 (ja) * 2006-11-16 2011-01-05 日新イオン機器株式会社 イオンビーム計測装置
JP6076834B2 (ja) * 2013-05-28 2017-02-08 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置
JP6496210B2 (ja) * 2015-08-12 2019-04-03 日本電子株式会社 荷電粒子線装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216794A (ja) * 1988-07-05 1990-01-19 Canon Inc 電子機器
CN1638014A (zh) * 2004-01-06 2005-07-13 应用材料有限公司 离子束监测装置
JP2006196351A (ja) * 2005-01-14 2006-07-27 Seiko Epson Corp イオン注入装置及び半導体装置の製造方法
KR20090047952A (ko) * 2007-11-09 2009-05-13 주식회사 동부하이텍 주사 전자 현미경
CN102832094A (zh) * 2011-06-15 2012-12-19 日新离子机器株式会社 离子源和离子注入装置
CN104835710A (zh) * 2014-02-10 2015-08-12 斯伊恩股份有限公司 高能量离子注入装置、射束平行化器及射束平行化方法
CN107104030A (zh) * 2016-02-22 2017-08-29 日新离子机器株式会社 离子束照射装置

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Publication number Publication date
CN109427526A (zh) 2019-03-05
JP6414763B1 (ja) 2018-10-31
JP2019046627A (ja) 2019-03-22

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