CN109413858A - A kind of preparation method of microwave ceramics substrate - Google Patents
A kind of preparation method of microwave ceramics substrate Download PDFInfo
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- CN109413858A CN109413858A CN201811331017.XA CN201811331017A CN109413858A CN 109413858 A CN109413858 A CN 109413858A CN 201811331017 A CN201811331017 A CN 201811331017A CN 109413858 A CN109413858 A CN 109413858A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0047—Drilling of holes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a kind of preparation methods of microwave ceramics substrate, belong to ceramic substrate technical field, a kind of preparation method of microwave ceramics substrate, including hole, shrink control, resistance control and just four steps of face coating, hole step includes plasma treatment, digital control hole drilling and chemical surface modification processing are step by step, shrinking control includes calculating shrinkage-compensating amount, the positioning of four slots and mold punching are step by step, resistance control includes calculating line width compensation rate, silk-screen exposure and etching are step by step, surface coating includes hot air leveling, organic solderability preservatives, chemical sinking nickel leaching gold, electroless immersion silver, chemical wicking, tin/lead fluidization treatment again, electronickelling gold, the heavy palladium of chemistry, electroplating gold is step by step, it may be implemented during preparing microwave ceramics substrate, to the hole technology of microwave ceramics substrate, harmomegathus control technology and surface coat skill Art process is greatly optimized, and the quality of production microwave ceramics substrate can be substantially improved.
Description
Technical field
The present invention relates to ceramic substrate technical fields, more specifically to a kind of preparation method of microwave ceramics substrate.
Background technique
It is applied in PCB processing with low-k and the substrate of low dielectric loss tangent and tends to extensively, study micro-
Wave ceramic substrate process technology is more and more important, due to compared with common PCB in the difference of substrate and use environment, in engineering system
Making mesoporous metal, the contraction of control substrate, impedance control and surface coating etc. has special technology.Microwave ceramics
Electric substrate-high frequency plate that substrate is applied to high frequency field is that printed board manufacturer is utilized in specific microwave substrate copper-clad plate
The microwave device that method is produced.It is different from common single dual platen and multi-layer board, not only plays the work of structural member, connector
With prior also to play a part of functor.
The characteristics of according to high frequency plate, need to pay close attention to hole technology, contraction technology, impedance control in engineering manufacture various aspects
Technology processed and surface coating technique are the problem that current industry is had a headache the most, and the present inventor carries out skill to the above difficult point thus
Art tackling key problem.
Present invention seek to address that hole technology, harmomegathus control technology and surface coating technique, mainly in terms of following three
Researched and developed, be respectively the hole technological difficulties of microwave ceramics substrate break through, the harmomegathus control technology difficult point of microwave ceramics substrate
It breaks through and microwave ceramics substrate surface paint-on technique breakthrough of difficulties.
Summary of the invention
1. technical problems to be solved
Aiming at the problems existing in the prior art, the purpose of the present invention is to provide a kind of preparation sides of microwave ceramics substrate
Method, it may be implemented during preparing microwave ceramics substrate, hole technology, harmomegathus control technology to microwave ceramics substrate
It is greatly optimized with surface coating technique process, the quality of production microwave ceramics substrate can be substantially improved.
2. technical solution
To solve the above problems, the present invention adopts the following technical scheme that.
A kind of preparation method of microwave ceramics substrate, comprising the following steps:
A, Kong Hua:
A1, plasma treatment: being handled by plasma processing, improves the wellability of polytetrafluoroethylene material, so that
The hydrophily and wetability of polytetrafluoroethylene material improve；
A2, digital control hole drilling: after bit cutting 25.40cm-30.48cm dielectric layer, more bit change is processed, and guarantees hole wall
Drilling quality；
A3, chemical surface modification processing: carrying out chemical surface modification processing to microwave substrate hole wall, interrupt C-F chemical bond,
Make microwave substrate hole wall that there is certain wellability；
B, control is shunk:
B1, it calculates shrinkage-compensating amount: by research, showing that X-axis shrinking percentage is 0.15%, Y-axis shrinking percentage is 0.08%；
Mold punching: B2, the positioning of four slots in four slot positioning systems, are punched once-forming using mold；
C, resistance controls:
C1, calculate line width compensation rate: 18 μm of copper foils line width when carrying out data processing increases 0.02mm；
C2, silk-screen exposure: using parallel exposing machine, line width is detected after development, should be in design line width+0.01mm to design
Between line width+0.03mm；
C3, etching: acid copper chloride etching liquid is used, is controlled set by the stability, etch temperature and etching machine of solution
Transmission speed, to control the uniformity of lateral erosion；
D, surface coats:
D1, hot air leveling: substrate is subjected to hot air leveling；
D2, organic solderability preservatives: organic solderability preservatives are a kind of thin organic coat layers, are passed to high speed signal
Defeated influence very little；
D3, chemical sinking nickel leaching gold: the coat of double layer of metal is catalyzed and formed on entire copper, the metal of top layer will provide
Low contact resistance, excellent storage life and good wetability；
D4, electroless immersion silver: the fine silver that coating thickness is 0.15 μm -0.5 μm；
D5, chemical wicking: on exposed copper face, one layer of smooth tin surfaces process layer is formed, pure stannum layer is possessed at least
0.2 μ m thick；
D6, tin/lead fluidization treatment again: fluidization treatment again is carried out to the tin on copper face/lead；
D7, electronickelling gold: using the method for being similar to chemical sinking nickel leaching gold, nickel layer is plated；
The heavy palladium of D8, chemistry: Metal Palladium is precipitated using chemical method；
D9, electroplating gold: gold-plated in substrate surface with galvanoplastic.
This programme may be implemented during preparing microwave ceramics substrate, to the hole technology of microwave ceramics substrate, rise
Contracting control technology and surface coating technique process are greatly optimized, and the quality of production microwave ceramics substrate can be substantially improved.
Further, in step A1, the plasma processing configuration includes radio frequency (RF) power supply, vacuum pump, vacuum
Process-cycle of fluorine-containing micro-strip plate and reliable can be improved in chamber, gas source (CF4, O2, N2, H2) and P2CIM, plasma processing
Property has the characteristics that low process costs, strong operability, maintenance and upkeep cost are low and meet environmental protection, uses plasma treatment
Afterwards, the hole problem of microwave ceramics substrate can be perfectly controlled.
Further, in step A2, the main technologic parameters of the drilling have the speed of mainshaft, the amount of feeding and maximum drilling
The micro-strip copper-clad plate material drilling parameter of number, unlike material is different.
Further, the relationship between the speed of mainshaft and different pore size drilling, can be calculate by the following formula:
The speed of mainshaft=12 × superficial velocity/(II X bit diameter)；Feed speed can be calculate by the following formula: feed speed
=the speed of mainshaft × cutting output.
Further, in step A3, interrupting C-F chemical bond and using is extraordinary oxidant.
Further, the extraordinary oxidant is FluroEtch solution, and safety is higher.
Further, it after step A3 is disposed, avoids contacting with environment such as UV light, high temperature or high humiditys as far as possible, is not easy to make
Binding ability decline.
Further, in step C, operating environment requirements are environment cleanliness between optical plotter room, egative film room and silk-screen exposure
It is required that 1000 grades, it can prevent plate distortion, prevent the presence of coarse dust from causing defect to route.
Further, in step B1, research process are as follows: the deviation of micro-strip pattern and benchmark after (a) investigation corrosion lists number
According to being compared with design size；(b) shrinkage from mold dimensions；(c) CAM data are compensated, including hole location；(d) four slots are used
Positioning system reduces XY axis difference shrinking percentage bring deviation；(e) mold punching and shaping is used, reduces milling cutter to micro-strip plate
It squeezes；(f) production board is detected, is compared with design size；(g) this process is studied repeatedly, obtains accurate shrinking percentage.
Further, when the FluroEtch solution becomes light green, Ying Genghuan solution, fresh FluroEtch solution
It is the blackish green of near-black.With the process used, the consumption of active constituent, color can be gradually thin out.When becoming light green
When, FluroEtch solution almost loses effect completely, therefore should replace solution.
3. beneficial effect
Compared with the prior art, the present invention has the advantages that
(1) this programme may be implemented during preparing microwave ceramics substrate, to the hole technology of microwave ceramics substrate,
Harmomegathus control technology and surface coating technique process are greatly optimized, and the quality of production microwave ceramics substrate can be substantially improved.
(2) in step A1, plasma processing configuration includes radio frequency (RF) power supply, vacuum pump, vacuum chamber, gas source
Process-cycle and the reliability of fluorine-containing micro-strip plate can be improved in (CF4, O2, N2, H2) and P2CIM, plasma processing, has work
Skill is at low cost, strong operability, maintenance and upkeep cost it is low and the features such as meet environmental protection, after plasma treatment, microwave pottery
The hole problem of porcelain substrate can be perfectly controlled.
(3) in step A2, the main technologic parameters of drilling have the speed of mainshaft, the amount of feeding and maximum hole number, unlike material
Micro-strip copper-clad plate material drilling parameter it is different.
(4) relationship between the speed of mainshaft and different pore size drilling, can be calculate by the following formula: the speed of mainshaft=
12 × superficial velocity/(II X bit diameter)；Feed speed can be calculate by the following formula: the feed speed=speed of mainshaft
× cutting output.
(5) in step A3, interrupting C-F chemical bond and using is extraordinary oxidant.
(6) extraordinary oxidant is FluroEtch solution, and safety is higher.
(7) it after step A3 is disposed, avoids contacting with environment such as UV light, high temperature or high humiditys as far as possible, is not easy to make to combine energy
Power decline.
(8) in step C, operating environment requirements are environment cleanliness requirement between optical plotter room, egative film room and silk-screen exposure
1000 grades, it can prevent plate distortion, prevent the presence of coarse dust from causing defect to route.
(9) in step B1, research process are as follows: the deviation of micro-strip pattern and benchmark after (a) investigation corrosion lists data, with
Design size is compared；(b) shrinkage from mold dimensions；(c) CAM data are compensated, including hole location；(d) it is positioned using four slots
System reduces XY axis difference shrinking percentage bring deviation；(e) mold punching and shaping is used, extruding of the milling cutter to micro-strip plate is reduced；
(f) production board is detected, is compared with design size；(g) this process is studied repeatedly, obtains accurate shrinking percentage.
(10) when FluroEtch solution becomes light green, Ying Genghuan solution, fresh FluroEtch solution is almost black
Color it is blackish green.With the process used, the consumption of active constituent, color can be gradually thin out.When becoming light green,
FluroEtch solution almost loses effect completely, therefore should replace solution.
Detailed description of the invention
Fig. 1 is process flow chart of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention；Technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description；Obviously；Described embodiments are only a part of the embodiments of the present invention；Instead of all the embodiments, it is based on
Embodiment in the present invention；It is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment；It shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the instruction such as term " on ", "lower", "inner", "outside", " top/bottom end "
Orientation or positional relationship be based on the orientation or positional relationship shown in the drawings, be merely for convenience of description the present invention and simplification retouch
It states, rather than the device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation,
Therefore it is not considered as limiting the invention.In addition, term " first ", " second " are used for description purposes only, and cannot understand
For indication or suggestion relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation " " is set
Be equipped with ", " be arranged/connect ", " connection " etc., shall be understood in a broad sense, such as " connection ", may be a fixed connection, be also possible to removable
Connection is unloaded, or is integrally connected；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, it can also be in
Between medium be indirectly connected, can be the connection inside two elements.It for the ordinary skill in the art, can be specific
Situation understands the concrete meaning of above-mentioned term in the present invention.
Embodiment 1
Referring to Fig. 1, a kind of preparation method of microwave ceramics substrate, comprising the following steps:
A, Kong Hua:
A1, plasma treatment: being handled by plasma processing, improves the wellability of polytetrafluoroethylene material, so that
The hydrophily and wetability of polytetrafluoroethylene material improve；
A2, digital control hole drilling: after bit cutting 25.40cm-30.48cm dielectric layer, more bit change is processed, and guarantees hole wall
Drilling quality；
A3, chemical surface modification processing: carrying out chemical surface modification processing to microwave substrate hole wall, interrupt C-F chemical bond,
Make microwave substrate hole wall that there is certain wellability；
B, control is shunk:
B1, it calculates shrinkage-compensating amount: by research, showing that X-axis shrinking percentage is 0.15%, Y-axis shrinking percentage is 0.08%；
Mold punching: B2, the positioning of four slots in four slot positioning systems, are punched once-forming using mold；
C, resistance controls:
C1, calculate line width compensation rate: 18 μm of copper foils line width when carrying out data processing increases 0.02mm；
C2, silk-screen exposure: using parallel exposing machine, line width is detected after development, should be in design line width+0.01mm to design
Between line width+0.03mm；
C3, etching: acid copper chloride etching liquid is used, is controlled set by the stability, etch temperature and etching machine of solution
Transmission speed, to control the uniformity of lateral erosion；
D, surface coats:
D1, hot air leveling: substrate is subjected to hot air leveling；
D2, organic solderability preservatives: organic solderability preservatives are a kind of thin organic coat layers, are passed to high speed signal
Defeated influence very little；
D3, chemical sinking nickel leaching gold: the coat of double layer of metal is catalyzed and formed on entire copper, the metal of top layer will provide
Low contact resistance, excellent storage life and good wetability；
D4, electroless immersion silver: the fine silver that coating thickness is 0.15 μm -0.5 μm；
D5, chemical wicking: on exposed copper face, one layer of smooth tin surfaces process layer is formed, pure stannum layer is possessed at least
0.2 μ m thick；
D6, tin/lead fluidization treatment again: fluidization treatment again is carried out to the tin on copper face/lead；
D7, electronickelling gold: using the method for being similar to chemical sinking nickel leaching gold, nickel layer is plated；
The heavy palladium of D8, chemistry: Metal Palladium is precipitated using chemical method；
D9, electroplating gold: gold-plated in substrate surface with galvanoplastic.
A, the hole technology of microwave ceramics substrate:
In microwave ceramics substrate plate design process, to achieve the purpose that ground connection, vertical transition or solder wettability, need
A large amount of plated through-holes.And plate used in most ceramic substrates all contains polyflon.Polytetrafluoroethylene (PTFE) is by one
A long linear molecule chain composition, be one not only hydrophobic hate oily material, the extremely difficult infiltration in surface again.Metal is carried out according to a conventional method
When changing processing, coating adhesion is very poor, or even does not deposit at all, therefore studies suitable surface treatment method, improves poly- four
The wellability of fluoride material is the key that solve the problems, such as.Therefore our company research and development technique is researched and developed from the following aspects:
Plasma processing techniques: plasma technology has become a kind of the very effective of the surface treatment applied to material
Method.Plasma is the gas of partial ionization, is the 4th state other than common solid-state, liquid, gaseous state.Plasma is by electricity
Son, ion, free radical, photon and other neutral particles composition.It itself is electroneutral.Due to electronics in plasma, from
The active particle such as son, free radical exists, itself is easy to react with material surface.F atom in C-F key is by plasma
Particle effect in body, is in metastable state by original ground state, the metastable state of activation at this time enables specimen surface to rise
Height, thus hydrophily, the wetability typical plasma chemical treatment technique that improves are oxygen or hydrogen gas plasma technique.It is logical
The oxygen radical for crossing plasma generation is very active, and easy carbon and hydrogen with organic matter reacts, generation carbon dioxide,
The volatile matters such as carbon monoxide and water.The gas and technological parameter that different ceramic substrate plates use can have any different, such as without pottery
The polyfluortetraethylene plate of porcelain selects N2, H2, and single step activates via process；And the complex media containing ceramics is carried out in two steps: first
Step cleaning and microetch filler (filler includes irregular glass granules fiber, glass-weave enhancing and PTFE ceramic complexes),
CF4,O2,N2；Second step, N2, H2 are equal to a step process of pure PTFE material application.Plasma processing configuration: by penetrating
Frequently the most of composition of (RF) power supply, vacuum pump, vacuum chamber, gas source (CF4, O2, N2, H2), P2CIM five.Plasma processing
Process-cycle and the reliability of fluorine-containing micro-strip plate can be improved, there is low process costs, strong operability, maintenance and upkeep cost
It is low, meet the features such as environmental protection.After plasma treatment, the hole problem of microwave ceramics substrate can be perfectly controlled.
Digital control hole drilling technology: microwave ceramics substrate aperture reliable metallization and hole numerical control drilling quality are closely related.Hole count
Control processing such as brings burr, and plated through-hole will appear crackle in erection welding.Since high frequency plate is not suitable for present printing
Plate machine for removing bur, manual operations is easy to bring the imperfection in aperture, so the numerical control processing of complex media plate hole can only pass through optimization
Drilling parameter selects special type knife to improve the quality of drilling.Due to containing polytetrafluoro resinoid, glass cloth in complex media plate
And the reinforcing materials such as ceramic powder, the thickness range of material is big, and intensity and firmness change are big, it is desirable that machining accuracy it is high.With it is general
FR-4 material PCB compare, tool wear is fast when complex media plate is processed, calorific value is big.To improve cutting quality and processing effect
Rate, we mainly guarantee the sharp processing quality of complex media plate in terms of backing plate, revolving speed, feeding three.Simultaneously to cutter
Service life is investigated.
Under normal circumstances, after bit cutting 25.40cm-30.48cm dielectric layer, more bit change is processed, it is ensured that hole
The drilling quality of wall.The main technologic parameters of drilling have the speed of mainshaft, the amount of feeding and maximum hole number.The micro-strip of unlike material is covered
Copper sheet material drilling parameter is different, and griffing speed is 1270cm/min.In the case that superficial velocity is certain, the big bradawl of different pore size
The speed of mainshaft in hole can be calculate by the following formula: the speed of mainshaft=12 × superficial velocity/(II X bit diameter)；Feeding
Speed can be calculate by the following formula: the feed speed=speed of mainshaft × cutting output.
Chemical surface modification processing method: chemical surface modification processing is carried out to microwave substrate hole wall, basic goal is
C-F chemical bond is interrupted, makes microwave substrate hole wall that there is certain wellability.In general, interrupting C-F chemical bond need to be very strong
Extraordinary oxidant.And extraordinary very strong oxidant is very dangerous in use, special protection is needed, as sodium naphthalene is molten
Liquid.In contrast, FluroEtch solution is much more secure, but cost is very high.
The processing of sodium naphthalene solution: when cutting metallic sodium, safety goggles should be worn, sodium can't be made to contact with water, sodium should be put into coal
It is saved in oil.Being stirred continuously with metal bar reacts solution sufficiently, can stop stirring when solution becomes blackish green, and sealing is held
Device.It can stop logical nitrogen at this time.Nitrogen 5min is first poured into container, micro-strip plate to be processed is clamping；Container is opened, is stirred
Solution is mixed, micro-strip plate is immersed in solution and is swung, is removed after 1min.Sealing container.Microwave substrate such as RT/duroid6002 is one
Kind contains larger volume score (> 50%) ceramic powder particles, and a kind of polytetrafluoroethylene (PTFE) synthesis with staple glass fibre therebetween
Object.It has the porosity characteristic close to 5% volume fraction, these micropores are present in the interface of ceramic powder particles Yu PTFE.It is some
The liquid of low surface tension, as organic solvent and the aqueous surfactant solution of load can penetrate into this some holes.To reduce high frequency
Plate to be processed is toasted at least 60min under the conditions of 150 DEG C before treatment by the influence of these ingredients in plate.Through sodium naphthalene solution
After processing, surface property improve the reason of be metallic sodium and refined naphthalene at a certain temperature, be dissolved in tetrahydrofuran solvent, react
Form active site.The active site makes the surface of PTFE by corrosion and activation.When solution colour becomes faint yellow completely,
Need to change solution；In operation, forbid being mixed into water or other solvents in solution.Because naphthalene sodium complex compound encounters in air
Carbon dioxide and water react.The micro-strip plate hole wall of modified processing becomes dark brown by original grey.Modification is excessively micro-
Band plate can sink copper as ordinary printed plate.
The processing of FluroEtch solution: FluroEtch solution is safer with respect to sodium naphthalene solution, need to only save at room temperature, nothing
It need to especially refrigerate.Fresh FluroEtch solution is the blackish green of near-black.With the process used, active constituent disappears
Consumption, color can be gradually thin out.When becoming light green, FluroEtch solution almost loses effect, Ying Genghuan solution completely.
The micro-strip plate time exposure handled well under w light, can be such that binding force declines.If the micro-strip plate after fluorine loses will stop
One long time, Ying Jinliang avoid contacting with environment such as UV light, high temperature, high humiditys.
B, microwave ceramics substrate shrinks control:
Special microwave ceramics substrate (such as RT6006) has shrinkage phenomenon in the production process, the range that shortens about 0.2mm-
0.3mm (plate overall length 150mm) causes positioning when sharp processing to generate deviation.
In the production of microwave ceramics substrate material, need to be bonded with ceramics, polytetrafluoro resinoid and copper foil, and sticking temperature is general
Higher than 200 DEG C.When being cooled to room temperature after forming, and the thermal expansion coefficient (CTE) of ceramics and copper foil is different, and ceramics have receipts
Contracting trend, but inhibited by two sides copper foil.When micro-strip pattern makes, most of copper foil is corroded on one side, medium (pottery
Porcelain and polytetrafluoro resinoid) thermal stress release, phenomenon is that micro-strip slab warping, after testing dimension of picture and hole location coordinate become smaller
(contraction).
Research process: the deviation of micro-strip pattern and benchmark after (a) investigation is corroded is listed data, is compared with design size
Compared with；(b) shrinkage from mold dimensions；(c) CAM data are compensated, including hole location；(d) four slot positioning systems are used, reduce XY axis not
With shrinking percentage bring deviation；(e) mold punching and shaping is used, extruding of the milling cutter to micro-strip plate is reduced；(f) production board is detected,
It is compared with design size.This process is studied repeatedly, obtains accurate shrinking percentage: X-axis shrinking percentage=0.15%, Y-axis
Shrinking percentage=0.08%.When compensating, high frequency plate diameter broadwise when must be to blanking carries out strict regulations.
Four slot positioning systems have application when multilayer aligns, its purpose is to divide equally the bit errors of plate face.Micro-strip plate
Four slots are used when contraction, production figure and mold punching and shaping become simply, and pin is easily loaded onto.Four slots and mounting hole, metallization
Hole compensates simultaneously while numerical control processing.
Start to use PCB numerical control mill when sharp processing, discovery has the case where allowing knife, such as component abnormity micro-strip plate.Abnormity is micro-
Band plate square hole and notch are more, and in milling since high frequency timber intensity is poor, it can allow to the opposite direction of the shear force of milling cutter, cause
Scale error it is unstable.The knife problem that allows is avoided using mold punching is once-forming, while ensure that the consistency of shape, just
In adjustment compensation rate.
By repetition tests such as above data compensation, four slot positioning, die formings, high frequency substrate is grasped and has shunk control
Key process technology ensure that the precision of benchmark and figure in production.
C, microwave ceramics substrate impedance control:
High-frequency electronic product type signal transmission process is that high-frequency signal sends out from driving element and passes through high frequency plate
Signal transmssion line reaches receiving element.Energy completely transmits in order to obtain, and the characteristic impedance of high frequency substrate must be with driving member
Part, receiving element " electronic impedance " match, otherwise will cause signal distortion, delay even completely lose.Therefore exist
In high frequency substrate, characteristic impedance control is the key in key.Engineering is manufactured, the substrate dielectric constant of high frequency substrate is situated between
Matter thickness, copper thickness are selected, and the work for actually needing to do is pilot width.How pilot width have with
Lower four key points.
(1) working environment has between what environment required: optical plotter room, egative film room, silk-screen exposure.In general, environment
1000 grades of purity requirements, it can prevent plate distortion, prevent the presence of coarse dust from causing defect to route.
(2) data processing in processing: according to different copper thicknesses, the line width of design is compensated.Generally, 18 μ
It is relatively effective that m copper foil line width when carrying out data processing, which increases 0.02mm,.
(3) silk-screen exposes: the surface treatment before silk-screen is suitable for chemically.To avoid caused by point type light source
Oblique fire, reflection, diffraction, using parallel exposing machine.Line width is detected after development, it should be in design line width+0.01mm to design lines
It is fluctuated between width+0.03mm.
(4) etch: the reasonability of etching is actually to control the uniformity of lateral erosion.Acid copper chloride etching liquid
Lateral erosion is determined by the following factors: (a) stability of solution；(b) etch temperature；(c) transmission speed set by etching machine.It is molten
In the case that liquid composition is in processing range, transmission speed reasonably adjust be guarantee side etching quantity in the reasonable scope effectively arrange
It applies.
From above-mentioned measure can be seen that high frequency substrate characteristic impedance control substantive issue be light draw, making sheet, etching it is equal
Even property problem.
D, microwave ceramics substrate surface coats:
It is directed to the final surface solderability coating surface processing mode of electric substrate now, mainly includes following several: (a) hot
Wind leveling；(b) organic solderability preservatives；(c) chemical sinking nickel leaching gold；(d) electroless immersion silver；(e) chemical wicking；(f) tin/lead is again
Fluidization treatment；(g) electronickelling gold；(h) the heavy palladium of chemistry；(i) electroplating gold.The surface coating layer of electric substrate is considered as having solderable
Property, in terms of contact is functional and storage life and other functions.When signaling rate increases, then coated on selection surface
The electrical characteristic of coat will become most important preferential position in layer.
Hot air leveling has good solderability, but has environmental pollution problem, while can cause high frequency substrate deformation.It is organic
Solderability preservatives are a kind of thin organic coat layers.It is it is nonconducting, electric signal is conducted by copper, so OSP
Influence to high speed transmission of signals is very little.But long term storage and be insecure as protective coating.
It is the coat for being catalyzed and being formed double layer of metal on entire copper that chemical sinking nickel, which soaks gold,.The gold of top layer will provide low
Contact resistance, excellent storage life and good wetability.But the integrality of high speed transmission of signals will depend on the thickness of nickel layer
With the part for transmitting signal conductor by nickel layer.Electroless immersion silver is by very thin (0.15 μm of -0.5 μ m thick) coating fine silver come group
At.Because the thickness for soaking silver relative to skin thickness be it is negligible, leaching silver is to appreciably influence high speed
Signal transmission.Chemical wicking is to form one layer of smooth tin surfaces process layer on exposed copper face.Chemical wicking has table
Surface evenness height, low operation temperature (can reduce since thermal stress makes plate generate warpage).Chemical wicking will reduce " tin palpus " phenomenon
With the thickness of control gun-metal layer.Want weldability good, it is necessary to which its pure stannum layer possesses minimum 0.2 μ m thick.Chemical wicking is
On exposed copper face, one layer of smooth tin surfaces process layer is formed.Chemical wicking has surface smoothness height, low operation temperature
(can reduce since thermal stress makes plate generate warpage).Chemical wicking will reduce the thickness of " tin palpus " phenomenon and control gun-metal layer
Degree.Want weldability good, it is necessary to which its pure stannum layer possesses minimum 0.2 μ m thick.Electronickelling gold is similar to chemical sinking nickel leaching gold, nickel layer
It influences high-frequency signal and is restricted.
This programme may be implemented during preparing microwave ceramics substrate, to the hole technology of microwave ceramics substrate, rise
Contracting control technology and surface coating technique process are greatly optimized, and the quality of production microwave ceramics substrate can be substantially improved.
The foregoing is intended to be a preferred embodiment of the present invention；But scope of protection of the present invention is not limited thereto.
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
It improves design and is subject to equivalent substitution or change, should be covered by the scope of protection of the present invention.
Claims (10)
1. a kind of preparation method of microwave ceramics substrate, it is characterised in that: the following steps are included:
A, Kong Hua:
A1, plasma treatment: being handled by plasma processing, improves the wellability of polytetrafluoroethylene material, so that poly- four
The hydrophily and wetability of fluoride material improve；
A2, digital control hole drilling: after bit cutting 25.40cm-30.48cm dielectric layer, more bit change is processed, and guarantees the brill of hole wall
Hole quality；
A3, chemical surface modification processing: chemical surface modification processing is carried out to microwave substrate hole wall, C-F chemical bond is interrupted, makes micro-
Wave substrate hole wall has certain wellability；
B, control is shunk:
B1, it calculates shrinkage-compensating amount: by research, showing that X-axis shrinking percentage is 0.15%, Y-axis shrinking percentage is 0.08%；
Mold punching: B2, the positioning of four slots in four slot positioning systems, are punched once-forming using mold；
C, resistance controls:
C1, calculate line width compensation rate: 18 μm of copper foils line width when carrying out data processing increases 0.02mm；
C2, silk-screen exposure: using parallel exposing machine, line width is detected after development, should be in design line width+0.01mm to designing line width
Between+0.03mm；
C3, etching: acid copper chloride etching liquid is used, biography set by the stability, etch temperature and etching machine of solution is controlled
Dynamic speed, to control the uniformity of lateral erosion；
D, surface coats:
D1, hot air leveling: substrate is subjected to hot air leveling；
D2, organic solderability preservatives: organic solderability preservatives are a kind of thin organic coat layers, to high speed transmission of signals
Influence very little；
D3, chemical sinking nickel leaching gold: the coat of double layer of metal is catalyzed and formed on entire copper, the metal of top layer will provide low
Contact resistance, excellent storage life and good wetability；
D4, electroless immersion silver: the fine silver that coating thickness is 0.15 μm -0.5 μm；
D5, chemical wicking: on exposed copper face, one layer of smooth tin surfaces process layer is formed, pure stannum layer possesses minimum 0.2 μm
Thickness；
D6, tin/lead fluidization treatment again: fluidization treatment again is carried out to the tin on copper face/lead；
D7, electronickelling gold: using the method for being similar to chemical sinking nickel leaching gold, nickel layer is plated；
The heavy palladium of D8, chemistry: Metal Palladium is precipitated using chemical method；
D9, electroplating gold: gold-plated in substrate surface with galvanoplastic.
2. a kind of preparation method of microwave ceramics substrate according to claim 1, it is characterised in that: described in step A1
Plasma processing configuration includes radio frequency (RF) power supply, vacuum pump, vacuum chamber, gas source (CF4, O2, N2, H2) and P2CIM.
3. a kind of preparation method of microwave ceramics substrate according to claim 1, it is characterised in that: described in step A2
The main technologic parameters of drilling have the speed of mainshaft, the amount of feeding and maximum hole number, and the micro-strip copper-clad plate material of unlike material, which drills, joins
Number is different.
4. a kind of preparation method of microwave ceramics substrate according to claim 3, it is characterised in that: the speed of mainshaft with
Relationship between different pore size drilling, can be calculate by the following formula: the speed of mainshaft=12 × superficial velocity/(II X drill bit
Diameter)；Feed speed can be calculate by the following formula: the feed speed=speed of mainshaft × cutting output.
5. a kind of preparation method of microwave ceramics substrate according to claim 1, it is characterised in that: in step A3, interrupt
It is extraordinary oxidant that C-F chemical bond, which uses,.
6. a kind of preparation method of microwave ceramics substrate according to claim 5, it is characterised in that: the special type oxidant
For FluroEtch solution.
7. a kind of preparation method of microwave ceramics substrate according to claim 1, it is characterised in that: step A3 is disposed
Afterwards, it avoids contacting with environment such as UV light, high temperature or high humiditys as far as possible.
8. a kind of preparation method of microwave ceramics substrate according to claim 1, it is characterised in that: in step C, building ring
Border requires to be between optical plotter room, egative film room and silk-screen exposure, and environment cleanliness requires 1000 grades.
9. a kind of preparation method of microwave ceramics substrate according to claim 1, it is characterised in that: in step B1, research
Process are as follows: the deviation of micro-strip pattern and benchmark after (a) investigation corrosion is listed data, is compared with design size；(b) it calculates
Shrinking percentage；(c) CAM data are compensated, including hole location；(d) four slot positioning systems are used, XY axis difference shrinking percentage band is reduced
The deviation come；(e) mold punching and shaping is used, extruding of the milling cutter to micro-strip plate is reduced；(f) production board is detected, with design size
It is compared；(g) this process is studied repeatedly, obtains accurate shrinking percentage.
10. a kind of preparation method of microwave ceramics substrate according to claim 6, it is characterised in that: the FluroEtch
When solution becomes light green, Ying Genghuan solution.
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| CN111343789A (en) * | 2020-03-06 | 2020-06-26 | 天通吉成机器技术有限公司 | Flexible panel bonding alignment method and related device |
| CN111867269A (en) * | 2020-06-01 | 2020-10-30 | 东莞市斯坦得电子材料有限公司 | Manufacturing process of oil-removing pore-finishing agent for conducting hole of high-frequency plate and oil-removing pore-finishing process of oil-removing pore-finishing agent |
| CN112384010A (en) * | 2020-10-29 | 2021-02-19 | 中国电子科技集团公司第三十八研究所 | Multilayer micro-strip plate processing method based on perovskite ceramic filling substrate |
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