CN106328544A - Patterning method of nitride ceramic copper-clad plate and nitride ceramic copper-clad plate - Google Patents
Patterning method of nitride ceramic copper-clad plate and nitride ceramic copper-clad plate Download PDFInfo
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- CN106328544A CN106328544A CN201610723496.4A CN201610723496A CN106328544A CN 106328544 A CN106328544 A CN 106328544A CN 201610723496 A CN201610723496 A CN 201610723496A CN 106328544 A CN106328544 A CN 106328544A
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- clad plate
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- nitride ceramics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
Abstract
The invention discloses a patterning method of a nitride ceramic copper-clad plate and a nitride ceramic copper-clad plate. The patterning method comprises the following steps: arranging a patterned anti-corrosion layer on the surface of the nitride ceramic copper-clad plate, wherein the nitride ceramic copper-clad plate is formed by an active brazing method; performing first etching treatment on the nitride ceramic copper-clad plate by using a first etching solution, wherein the first etching solution comprises a CuCl<2> solution or a FeCl<3> solution; performing second etching treatment on the nitride ceramic copper-clad plate being subjected to the first etching treatment by using a second etching solution; and performing third etching treatment on the nitride ceramic copper-clad plate being subjected to the second etching treatment by using a third etching solution. The patterning method has the advantages of high etching efficiency, uniform etching and freeness from residues; the etching quality is improved; and a metal layer has a good plate surface state.
Description
Technical field
The present invention relates to semiconductor substrate and prepare technical field, in particular to a kind of nitride ceramics copper-clad plate
Graphic method and nitride ceramics copper-clad plate.
Background technology
High power module is widely used in the fields such as electric locomotive, electric automobile, photovoltaic solar.Along with power model collection
Cheng Du is more and more higher, and power is increasing, and the heat that semiconductor device produces is in rising trend.At present, by electrical and thermal conductivity performance
The ceramic post sintering structure base board that the insulating radiations such as good metallic plate and aluminium nitride are good engages, and has formed the way of ceramic circuit-board
Through being widely used.Ceramic circuit-board is widely used due to good heat conductivility, the liner plate as power model, thus
Solve the heat dissipation problem of semiconductor device.
So far, the method that metallic plate engages with pottery mainly there are two kinds of methods, direct bonding method and active soldering
Method.So-called directly bonding method is exactly as binding agent using the eutectic liquid phase of metallic plate (paper tinsel) and oxygen, in the feelings not using cored solder
Under condition, the method directly metal engaged with pottery by heating；Active soldering method is by the pricker containing Ti isoreactivity metal
Solder, being engaged with non-oxide ceramics by metallic plate (paper tinsel) is an overall method.
Active soldering method is to use Ti isoreactivity solder bonding metal material and pottery at high temperature anti-in pottery and metallic plate (paper tinsel)
Binder course should be generated, realize the connection between metallic plate (paper tinsel) and ceramic substrate by this binder course.Such as, AlN ceramic covers copper
In the manufacture process of plate, the cored solder containing Ti engages with AlN ceramic, at high temperature forms knot between AlN ceramic and metal copper foil
Close layer.The most homogeneous Rotating fields of binder course that generates but comprise brazing solder layer and cored solder is anti-with ceramic substrate
The reaction product layer that should generate.The existence of binder course makes bond strength between pottery and cored solder be greatly improved.Compared to directly
Bonding method, the ceramet substrate that active soldering method makes has higher intensity, less air-tightness and more preferable use can
By property.Therefore active soldering method it is typically chosen.But due to binder course have electric conductivity and with common etching solution (CuCl2Molten
Liquid or FeCl3Solution) sluggish, especially cored solder and ceramic substrate react the reaction product layer generated, and chemical property is steady
Fixed, react with common etching solution hardly, it is difficult to be etched removal.Therefore the existence of binder course makes graphics art to etching
Bring difficulty.
In order to evade the problems referred to above that binder course brings, there is correlation technique by advance active solder being printed as target
Figure covers block of metal plate again and burns till, and makes metallized ceramic substrate and can avoid the removal of binder course.But due to pricker
Can cave in and flow in solder high-temperature sintering process, for the finest figure, this method is the most infeasible.
At present, the method for relatively common in industry etching binder course mainly has two kinds: dry etching and wet etching.Dry
Method etches and can etch fine pattern, but apparatus expensive, production efficiency is low, inapplicable ceramic substrate Etching.Wet etching
It is to utilize etching solution: fluorion system etching solution or hydrogen peroxide system etching solution are etched binder course.Real process is sent out
Existing, the mixed liquor etc. of fluoride ion etch liquid such as Fluohydric acid. and nitric acid, its exist etch-rate slowly, etch the problem such as not to the utmost, and
And etching solution stings erosion metal sheet surface so that metal plate state is poor.Hydrogen peroxide system etching solution there is also etching not to the utmost, erosion
After quarter, residue is difficult to the problem removed.Hydrogen peroxide easily decomposes, less stable, in order to improve etching solution stability, needs to add
Stabilizer and etching selective agent, so can improve the stability of hydrogen peroxide etching solution, but etching solution is to other metals simultaneously
Etch capabilities declines, it is easier to the problem occurring etching not to the utmost and residue is difficult to remove.
Summary of the invention
It is an object of the invention to provide the graphic method of a kind of nitride ceramics copper-clad plate, improve etching efficiency, erosion
Carve homogeneous without residue, improve etching quality, and plymetal surface state is good.
Another object of the present invention is to provide a kind of nitride ceramics copper-clad plate, its conduction, perfect heat-dissipating, structure letter
Single, stable performance.
Embodiments of the invention are achieved in that
A kind of graphic method of nitride ceramics copper-clad plate, comprising:
The graphical resist layer of surface configuration in nitride ceramics copper-clad plate, nitride ceramics copper-clad plate is to utilize activity pricker
Welding method makes and is formed；
Utilizing the first etching solution that nitride ceramics copper-clad plate carries out etch processes for the first time, the first etching solution includes
CuCl2Solution or FeCl3Solution；
Utilize the second etching solution that the nitride ceramics copper-clad plate through etch processes for the first time is carried out at second time etching
Reason, the second etching solution includes by mass percentage: the Fe (NO of 2%-3%3)3, the HNO of 1%-5%3, remaining component is water；
And
Utilize the 3rd etching solution that the nitride ceramics copper-clad plate through second time etch processes is carried out at third time etching
Reason, the 3rd etching solution includes by mass percentage: the H of 5%-30%2O2, the organic phosphonic compound of 1%-4%, 0.1%-
The phosphoric acid of 3%, 0.1%-2% azole compounds, remaining component is water.
A kind of nitride ceramics copper-clad plate, nitride ceramics copper-clad plate is that above-mentioned graphic method is prepared from.
The embodiment of the present invention provides the benefit that:
(1) present invention by the first time etch processes that carries out successively, for the second time etch processes and third time etching at
Managing and different etch targets is used specific aim etching solution so that etching period shortens, efficiency improves.By the present invention in that with spy
Fixed etching solution etching specific metal (or alloy) layer, i.e. after Copper Foil is etched removal, re-uses two kinds of etching solution substeps
Etching binder course, the prior art effectively solved etching is slow, etching technical problem not to the utmost.
(2) present invention is when being etched binder course processing, and is entered in two steps by the second etching solution and the 3rd etching solution
OK.Second etching solution to formed the first alloy-layer be etched, can accomplish uniform, thoroughly etch so that the second alloy-layer
Can be the most exposed, then be etched by the 3rd etching solution so that the whole etched to binder course is homogeneous, without residual
Slag, improves etching quality.
(3) present invention utilizes the first etching solution to be etched Copper Foil in the case of resist layer is not removed, the most permissible
Avoiding Copper Foil to be snapped erosion, after etching, plymetal surface state is good.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, below by embodiment required use attached
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, and it is right to be therefore not construed as
The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to according to this
A little accompanying drawings obtain other relevant accompanying drawings.
Fig. 1 is the process chart of the graphic method of the nitride ceramics copper-clad plate of the present invention；
Fig. 2 is the nitride ceramics substrate structural representation before sintering of the present invention；
Fig. 3 is the nitride ceramics substrate partial enlarged drawing after sintering of the present invention；
Fig. 4 is the nitride ceramics substrate partial enlarged drawing after the etching of the present invention.
In figure:
Nitride ceramics copper-clad plate 100；Ceramic substrate 110；Copper Foil 120；The active soldering bed of material 130；Binder course 140；The
One alloy-layer 141；Second alloy-layer 142；Etching lines 150.
Detailed description of the invention
Below in conjunction with embodiment, embodiment of the present invention are described in detail, but those skilled in the art will
Understanding, the following example is merely to illustrate the present invention, and is not construed as limiting the scope of the present invention.In embodiment unreceipted specifically
Condition person, the condition advised according to normal condition or manufacturer is carried out.Agents useful for same or instrument unreceipted production firm person, be
Can be by the commercially available conventional products bought and obtain.
Use active soldering legal system to make metallized ceramic substrate, need to be coated with one layer of work between ceramic surface and metallic plate
Property cored solder, through high temperature sintering, metallic plate-active solder-ceramic substrate can engage closely, formed overall structure.By
In the thickness relative to metallic plate, the thickness of binder course 140 is the least.But, although binder course 140 thickness is the least, but its component
Difference is the biggest.The active soldering bed of material and ceramic substrate high-temperature sintering process generate ceramic substrate table while TiN binder course
Face has moieties to be reduced.Such as AlN ceramic, it generates TiN with containing reaction under Ti active solder high temperature, generates gold simultaneously
Belong to aluminum.In metallic aluminium and active solder, copper, silver, titanium are mixed with each other, and are present in the most surface of binder course 140, that is to say this
First alloy-layer 141 of bright indication.The most homogeneous TiN layer of component (containing a small amount of aluminum) it is only, also below first alloy-layer 141
It it is i.e. the second alloy-layer 142 of indication of the present invention.Therefore, binder course 140 substantially comprises the first alloy-layer of indication of the present invention
141 and second alloy-layer 142, and two alloy-layer components differ greatly.
Prior art, for the removal of binder course 140, often ignores the difference of its alloy-layer component, selects a kind of etching solution
It is etched.If only selecting a kind of etching solution etching to remove binder course 140, it is necessary to this etching solution has strong etch capabilities,
Whole binder course 140 there is good etching.But there is reaction in such etching solution (such as Fluohydric acid .+nitric acid etch liquid)
Condition is harsh, and the metallic copper on surface is stung that erosion is serious by etching solution, and apparent condition is poor, etches the problem such as not to the utmost.
Refer to Fig. 1, the graphic method of a kind of nitride ceramics copper-clad plate of the present invention comprises the following steps:
Step 1: graphical resist layer is set
The graphical resist layer of surface configuration in nitride ceramics copper-clad plate 100, nitride ceramics copper-clad plate 100 is to utilize
Active soldering legal system is formed.
Wherein, make nitride ceramics copper-clad plate 100 to include: be coated in by the way of justifying is printed by active solder
The both side surface of ceramic substrate 110, then the Copper Foil 120 through surface preparation is arranged on is coated on the two of ceramic substrate 110
On the active solder of side surface, sintering processes.Particularly as follows: sinter 10-under conditions of temperature is 800 DEG C～1000 DEG C
60min, in nitride ceramics copper-clad plate 100, nitride ceramics can be aluminium nitride ceramics, silicon nitride ceramics or boron nitride ceramics,
That is to say that ceramic substrate 110 can be aluminium nitride ceramics, silicon nitride ceramics or boron nitride ceramics.
The preparation of nitride ceramics copper-clad plate 100 farther includes: printing process, cover Copper Foil operation and sintering circuit.
Specifically: printing process is the both side surface that active solder is coated on ceramic substrate 110 by imposite mode of printing.At this
In embodiment, the active solder of the present invention is copper silver solder, and also includes the one in titanium, zirconium, hafnium isoreactivity metal
Or it is multiple.Covering Copper Foil operation is respectively to cover one block of imposite Copper Foil in the both side surface of the ceramic substrate 110 being coated with active solder
120, wherein, Copper Foil 120 needs to carry out surface preparation, i.e. carry out oil removing and oxide layer processes, to guarantee Copper Foil 120 table
Face is without oils and fats and oxide.According to a preferred implementation, Copper Foil 120 is carried out oil removing can be entered by alkali liquor or degreaser
Row processes.According to a preferred implementation, Copper Foil 120 is carried out oxide layer and processes and can clean with dilution heat of sulfuric acid dipping
Mode complete.Sintering circuit is that nitride ceramics copper-clad plate 100 carries out high temperature sintering, forms pottery and engages with Copper Foil 120
Good overall structure.
The structure of the nitride ceramics copper-clad plate 100 after sintering is as in figure 2 it is shown, the nitride of the present invention according to the method described above
Ceramic copper-clad plate 100, it includes ceramic substrate 110, Copper Foil 120 and plated film (not shown).In the present embodiment, Copper Foil 120
It is arranged on the both sides of ceramic substrate 110.Copper Foil 120 by be arranged on the active soldering bed of material 130 on the surface of ceramic substrate 110 with
Ceramic substrate 110 welds.Plated film (not shown) is arranged at the surface of Copper Foil 120, is used for protecting Copper Foil 120, improves Copper Foil 120
Solderability.
As it is shown on figure 3, the ceramic copper-clad plate after Shao Jie, active solder and nitride ceramics substrate react formation such as Fig. 3
The structure of shown binder course 140.After oversintering, the active soldering bed of material 130 is changed with ceramic substrate 110 and Copper Foil 120
Learn reaction and between ceramic substrate 110 and Copper Foil 120, form one layer of binder course 140 so that ceramic substrate 110 and Copper Foil 120
Connect and form an entirety.But this binder course 140 heterogeneity, but form the alloy-layer that two composition of layer are different: the first alloy
Layer 141 and the second alloy-layer 142.First alloy-layer 141 is near the side of Copper Foil 120, when ceramic substrate 110 is aluminium nitride pottery
During porcelain, it mainly includes metal: copper, silver, titanium, aluminum, and when ceramic substrate 110 is boron nitride ceramics, it mainly includes metal:
Copper, silver, titanium, boron, when ceramic substrate 110 is silicon nitride ceramics, it mainly includes metal: copper, silver, titanium, silicon；Second alloy-layer
142 are positioned at the lower section of the first alloy 141 layers near the side of ceramic substrate 110, and it specifically includes that TiN and other reaction a small amount of
Product.
Resist layer is dry film or wet film.And patterned detailed process includes on resist layer:, first with metallization pottery
The laminating of porcelain substrate surface or one layer of resist layer of coating, then by the method for traditional line pattern, desirably forming pattern
Region, use the specific egative film film to block resist layer, then be exposed by high light, the part blocked by the film, resist layer
In chemical substance there is not chemical reaction, such that it is able to alkalescence developer solution is removed, and the part do not blocked by the film, anti-
Erosion layer issue biochemical reaction in the effect of high light, developer solution not with this partial reaction, be consequently formed the resist layer of special pattern
Structure, i.e. etched figure.
Step 2: etch processes for the first time
Utilizing the first etching solution that nitride ceramics copper-clad plate 100 carries out etch processes for the first time, the first etching solution includes
CuCl2Solution or FeCl3Solution.Specifically, by the first etching solution (CuCl2Solution or FeCl3Solution) according to etched figure to copper
Paper tinsel 120 carries out the moment.According to a preferred implementation, use spray or the mode of dipping when Copper Foil 120 is etched
Etching Copper Foil 120.Etch processes mainly etching Copper Foil 120 for the first time.
Step 3: etch processes for the second time
Utilize the second etching solution that the nitride ceramics copper-clad plate 100 through etch processes for the first time is carried out second time to etch
Processing, the second etching solution includes by mass percentage: the Fe (NO of 2%-3%3)3, the HNO of 1%-5%3, remaining component is
Water.After etch processes completes for the first time, Copper Foil is etched into specific figure, exposes the first alloy-layer 141, by the second erosion
Carve liquid to be etched the first alloy-layer 141 processing.
Step 4: etch processes for the third time
Utilize the 3rd etching solution that the nitride ceramics copper-clad plate 100 through second time etch processes is carried out third time to etch
Processing, the 3rd etching solution includes by mass percentage: the H of 5%-30%2O2, the organic phosphonic compound of 1%-4%,
The phosphoric acid of 0.1%-3%, 0.1%-2% azole compounds, remaining component is water.Further, by ammonia regulation the 3rd etching solution
PH value is to 8-11.Preferably, organic phosphonic compound can include that aminotrimethylene pitches phosphonic acids, diethylenetriamine five methene phosphine
One or more in acid, ethylene diamine tetra methylene phosphonic acid, ethylene diamine tetra methylene phosphonic acid and 1-hydroxy ethylidene-1,1-diphosphonic acid.Preferably, azoles
Compounds includes one or more in benzotriazole, pyrazoles and 5 amino-1H-TETRAZOLE.After second etch processes completes,
First alloy-layer 141 is etched, and exposes the second alloy-layer 142, is then utilizing the 3rd etching solution to enter the second alloy-layer 142
Row etch processes.The present invention reduces the by adding organic phosphate cpd and azole compounds as copper etchant solution inhibitor
Three etching solutions etching to Copper Foil, it is to avoid when carrying out third time etch processes, Copper Foil is etched excessively.
Refer to Fig. 4, after three etch processes, the nitride ceramics copper-clad plate 100 of the present invention as shown in Figure 4, warp
For the first time etch processes, for the second time etch processes and third time etch processes after, Copper Foil 120 and binder course 140 are all removed,
And form etching lines 150, and then form required circuitous pattern in whole nitride ceramics copper-clad plate 100.
In preferred embodiment of the present invention, the graphic method of the present invention also includes removing resist layer step.Further, go
Except resist layer step is carried out after second time etch processes completes so that before etching terminates, resist layer can effectively be protected
Protect Copper Foil 120 other be made without etching part, it is to avoid Copper Foil 120 is excessively stung erosion, plymetal surface state after etching
Well.
In preferred embodiment of the present invention, the graphic method of the present invention is additionally included in Copper Foil 120 surface and carries out plated film
Step, plating steps is carried out after third time etch processes completes, and plated film is that organic guarantor welds film, nickel film, nickel gold film or nickel
Porpezite film.The mode using plated film carries out surface to the Copper Foil 120 after having etched, and can effectively protect Copper Foil 120, improves copper
The solderability of paper tinsel 120.
The nitride ceramics copper-clad plate 100 obtained according to the graphic method of the present invention, its simple in construction, stable performance,
And form the part of circuitous pattern, between ceramic substrate 110 and Copper Foil 120, there is not the binder course 140 of residual, it is to avoid
The binder course 140 impact on nitride ceramics copper-clad plate 100 performance, improves the quality of nitride ceramics copper-clad plate 100.
Below in conjunction with embodiment, the present invention is further described.
Embodiment 1
Active solder is coated in by imposite mode of printing the both sides of the aluminum nitride ceramic substrate 110 of 50mm × 50mm
Surface.Ceramic substrate 110 both sides being coated with active solder respectively arrange one block of Copper Foil mated with ceramic substrate 110 size
120.Needed Copper Foil 120 is carried out surface preparation before arranging Copper Foil 120, to remove greasy dirt and the oxide layer on surface.By nitrogen
Changing aluminum ceramic substrate 110 and Copper Foil 120 is sintered under conditions of temperature is 800 DEG C, sintering process is entered under vacuum
OK, vacuum is 5 × 10-4Pa.Whole sintering time is 10min.Copper is covered obtaining semi-finished product aluminium nitride ceramics after oversintering
The surface configuration of plate 100 is as the dry film of resist layer.Then on resist layer, form required etched figure (that is to say and need shape
The circuit diagram become).It is etched processing according to the double finished product aluminium nitride ceramic copper-clad plate 100 of etched figure formed.Etched
Journey is as follows:
First, the first etching solution is carried out by the way of spray etch processes for the first time to Copper Foil 120.At the present embodiment
In, the first etching solution is CuCl2Solution.Then, the second etching solution is carried out second to the first alloy-layer 141 of binder course 140
Secondary etch processes, it is possible to use the mode of spray.Originally being in embodiment, the second etching solution is: by mass percentage, 2%
Fe (NO3)3, the HNO of 1%3, remaining component is water.Metallic element (mainly copper, aluminum, titanium, silver) when the first alloy-layer 141
After being etched removal, the resist layer (not shown) being arranged on Copper Foil 120 both sides is removed.Then the 3rd etching solution is to binder course
Second alloy-layer 142 (mainly TiN) of 140 carries out third time etch processes.In the present embodiment, the 3rd etching solution is: press
Mass percent, the H of 5%2O2, the organic phosphonic compound of 1%, the phosphoric acid of 0.1%, the azole compounds of 0.1%, use ammonia
Water regulation pH value is to 8, and remaining component is water.Finally, carrying out coating film treatment on Copper Foil 120 surface, this plated film is that organic guarantor welds film,
Finally can obtain graphical aluminium nitride ceramics copper-clad plate 100.
Embodiment 2
Active solder is coated in by imposite mode of printing the both sides of the boron nitride ceramics substrate 110 of 50mm × 50mm
Surface.Ceramic substrate 110 both sides being coated with active solder respectively arrange one block of Copper Foil mated with ceramic substrate 110 size
120.Needed Copper Foil 120 is carried out surface preparation before arranging Copper Foil 120, to remove greasy dirt and the oxide layer on surface.By nitrogen
Changing aluminum ceramic substrate 110 and Copper Foil 120 is sintered under conditions of temperature is 900 DEG C, sintering process is entered under vacuum
OK, vacuum is 2 × 10-4Pa.Whole sintering time is 40min.Copper is covered obtaining semi-finished product aluminium nitride ceramics after oversintering
The surface configuration of plate 100 is as the dry film of resist layer.Then on resist layer, form required etched figure (that is to say and need shape
The circuit diagram become).It is etched processing according to the double finished product aluminium nitride ceramic copper-clad plate 100 of etched figure formed.Etched
Journey is as follows:
First, the first etching solution is carried out by the way of dipping etch processes for the first time to Copper Foil 120.At the present embodiment
In, the first etching solution is FeCl3Solution.Then, the second etching solution is carried out second to the first alloy-layer 141 of binder course 140
Secondary etch processes, it is possible to use the mode of dipping.Originally being in embodiment, the second etching solution is: by mass percentage,
The Fe (NO3) of 2.5%3, the HNO of 3%3, remaining component is water.When the first alloy-layer 141 element (mainly copper, boron, titanium,
Silver) be etched removal after, will be arranged on Copper Foil 120 both sides resist layer (not shown) remove.Then the 3rd etching solution is to knot
The second alloy-layer 142 (mainly TiN) closing layer 140 carries out third time etch processes.In the present embodiment, the 3rd etching solution
For: by mass percentage, the H of 15%2O2, the organic phosphonic compound of 2%, the phosphoric acid of 1.8%, the azole chemical combination of 0.9%
Thing, with ammonia regulation pH value to 8, remaining component is water.Finally, carrying out coating film treatment on Copper Foil 120 surface, this plated film is nickel
Film, finally can obtain nitride ceramics copper-clad plate 100.
Embodiment 3
Active solder is coated in by imposite mode of printing the both sides of the silicon nitride ceramic substrate 110 of 50mm × 50mm
Surface.Ceramic substrate 110 both sides being coated with active solder respectively arrange one block of Copper Foil mated with ceramic substrate 110 size
120.Needed Copper Foil 120 is carried out surface preparation before arranging Copper Foil 120, to remove greasy dirt and the oxide layer on surface.Will pottery
Porcelain substrate 110 and Copper Foil 120 are sintered under conditions of temperature is 1000 DEG C, and sintering process is carried out under vacuum, very
Reciprocal of duty cycle is 8 × 10-4Pa.Whole sintering time is 60min.Semi-finished product silicon nitride ceramics copper-clad plate 100 is being obtained after oversintering
Surface configuration as the wet film of resist layer.Then on resist layer, form required etched figure (that is to say and need formation
Circuit diagram).It is etched processing according to the double product nitrogen compound ceramic copper-clad plate 100 of etched figure formed.Etching process is such as
Under:
First, the first etching solution is carried out by the way of spray etch processes for the first time to Copper Foil 120.At the present embodiment
In, the first etching solution is FeCl3Solution.Then, the second etching solution is carried out second to the first alloy-layer 141 of binder course 140
Secondary etch processes, uses the mode of spray.Originally being in embodiment, the second etching solution is: by mass percentage, the Fe of 3%
(NO3)3, the HNO of 5%3, remaining component is water.When the element (mainly copper, silicon, titanium, silver) of the first alloy-layer 141 is etched
Except afterwards, the resist layer being arranged on Copper Foil 120 both sides is removed.Then the 3rd etching solution the second alloy-layer to binder course 140
142 (mainly TiN) carry out third time etch processes.In the present embodiment, the 3rd etching solution is: by mass percentage,
The H of 30%2O2, the organic phosphonic compound of 4%, the phosphoric acid of 3%, the azole compounds of 2%, with ammonia regulation pH value to 11, its
Remaining component is water.Finally, carrying out coating film treatment on Copper Foil 120 surface, this plated film is NiPdAu film, finally can obtain nitride
Ceramic copper-clad plate 100.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, that is made any repaiies
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (9)
1. the graphic method of a nitride ceramics copper-clad plate, it is characterised in that comprising:
The graphical resist layer of surface configuration in nitride ceramics copper-clad plate, described nitride ceramics copper-clad plate is to utilize activity pricker
Welding method makes and is formed；
Utilizing the first etching solution that described nitride ceramics copper-clad plate carries out etch processes for the first time, described first etching solution includes
CuCl2Solution or FeCl3Solution；
Utilize the second etching solution that the described nitride ceramics copper-clad plate through described first time etch processes carries out second time to lose
Quarter processes, and described second etching solution includes by mass percentage: the Fe (NO of 2%-3%3)3, the HNO of 1%-5%3, remaining group
It is divided into water；And
Utilize the 3rd etching solution that the described nitride ceramics copper-clad plate through described second time etch processes carries out third time to lose
Quarter processes, and described 3rd etching solution includes by mass percentage: the H of 5%-30%2O2, the organic phospho acid chemical combination of 1%-4%
Thing, the phosphoric acid of 0.1%-3%, 0.1%-2% azole compounds, remaining component is water.
The graphic method of nitride ceramics copper-clad plate the most according to claim 1, it is characterised in that make described nitridation
Thing ceramic copper-clad plate includes:
Active solder is coated in the both side surface of ceramic substrate, then the Copper Foil through surface preparation is arranged on is coated on
On the described active solder of the both side surface of described ceramic substrate, sintering processes.
The graphic method of nitride ceramics copper-clad plate the most according to claim 2, it is characterised in that described active soldering
Material is the both side surface being coated on described ceramic substrate by the way of justifying is printed.
The graphic method of nitride ceramics copper-clad plate the most according to claim 2, it is characterised in that described nitride is made pottery
Porcelain copper-clad plate sinters formation under conditions of temperature is 800 DEG C～1000 DEG C, and the time carrying out described sintering processes is 10-
60min。
The graphic method of nitride ceramics copper-clad plate the most according to claim 1, it is characterised in that described nitride is made pottery
In porcelain copper-clad plate, nitride ceramics is aluminium nitride ceramics, silicon nitride ceramics or boron nitride ceramics.
The graphic method of nitride ceramics copper-clad plate the most according to claim 1, it is characterised in that described 3rd etching
The ammonia regulation to 8-11 of the pH value of liquid.
The graphic method of nitride ceramics copper-clad plate the most according to claim 1, it is characterised in that described graphical side
Method also includes removing resist layer step, and described removal resist layer step is carried out after described second time etch processes completes.
The graphic method of nitride ceramics copper-clad plate the most according to claim 1, it is characterised in that described graphical side
Method is additionally included in the surface of described nitride ceramics copper-clad plate and carries out plating steps, and described plating steps is to lose in described third time
Quarter has been carried out after having processed, and described plated film is that organic guarantor welds film, nickel film, nickel gold film or NiPdAu film.
9. a nitride ceramics copper-clad plate, it is characterised in that it is according to described nitride arbitrary in claim 1 to 8
The graphic method of ceramic copper-clad plate is made.
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| CN201710737719.7A CN107527822B (en) | 2016-08-24 | 2017-08-24 | A kind of graphic method of nitride ceramics copper-clad plate and graphical nitride ceramics copper-clad plate |
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| CN107527822B (en) | 2019-10-25 |
| CN107527822A (en) | 2017-12-29 |
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