CN109411547A - 薄膜晶体管及制备方法、显示基板及制备方法、显示装置 - Google Patents

薄膜晶体管及制备方法、显示基板及制备方法、显示装置 Download PDF

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CN109411547A
CN109411547A CN201811288816.3A CN201811288816A CN109411547A CN 109411547 A CN109411547 A CN 109411547A CN 201811288816 A CN201811288816 A CN 201811288816A CN 109411547 A CN109411547 A CN 109411547A
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active layer
source electrode
substrate
electrode
film transistor
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CN109411547B (zh
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操彬彬
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种薄膜晶体管及制备方法、显示基板及制备方法、显示装置，属于显示技术领域。本发明的一种薄膜晶体管，包括基底，以及位于所述基底之上的源极、漏极和有源层，所述有源层包括第一有源层和第二有源层，所述第一有源层的载流子迁移率大于所述第二有源层的载流子迁移率，且所述第二有源层相对所述第一有源层更靠近所述源极和漏极；所述源极和所述漏极在所述基底上的正投影落入所述第二有源层的在所述基底上的正投影内。

Description

薄膜晶体管及制备方法、显示基板及制备方法、显示装置
技术领域
本发明属于显示技术领域，具体涉及一种薄膜晶体管及制备方法、显示基板及制备方法、显示装置。
背景技术
由于低温多晶硅(Low Temperature Poly-Silicon，简称LTPS)具有较高的迁移率及稳定性，其迁移率可达非晶硅的几十甚至几百倍，故可采用低温多晶硅材料形成薄膜晶体管，应用于显示装置中。
薄膜晶体管包括顶栅型薄膜晶体管和底栅型薄膜晶体管，相对于顶栅型薄膜晶体管，底栅型薄膜晶体管的制备工艺更为简单，具有较大的成本优势。根据制作工艺的差异，底栅型薄膜晶体管一般分为背沟道刻蚀型结构(BCE)和刻蚀阻挡层型结构(ESL)。其中。BCE结构中可减少一层刻蚀阻挡层的使用，工艺较为简单，但是其漏电流较高，无法在显示面板中得到很好的应用。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提供一种能够减小漏电流的薄膜晶体管。
解决本发明技术问题所采用的技术方案是一种薄膜晶体管，包括基底，以及位于所述基底之上的源极、漏极和有源层，所述有源层包括第一有源层和第二有源层，所述第一有源层的载流子迁移率大于所述第二有源层的载流子迁移率，且所述第二有源层相对所述第一有源层更靠近所述源极和漏极；所述源极和所述漏极在所述基底上的正投影落入所述第二有源层的在所述基底上的正投影内。
优选的，所述薄膜晶体管还包括：位于源极与所述第二有源层之间、位于所述漏极与所述第二有源层之间的欧姆接触层。
优选的，所述第一有源层的材料为非晶硅；所述第二有源层的材料为多晶硅。
解决本发明技术问题所采用的技术方案是一种显示基板，包括设置于基底上的薄膜晶体管，所述薄膜晶体管为上述任意一种薄膜晶体管。
优选的，所述显示基板还包括设置于基底上的数据线，所述数据线与所述源极、所述漏极同层设置且材料相同；
所述数据线通过连接电极与所述源极电连接。
优选的，所述显示基板还包括：设置于所述源极、所述漏极和所述数据线所在层背离所述基底一侧的绝缘层；所述绝缘层对应所述数据线的位置设置有第一过孔，所述绝缘层对应所述源极的位置设置有第二过孔；所述连接电极通过所述第一过孔和所述第二过孔与所述数据线和所述源极电连接。
进一步优选的，所述显示基板还包括：设置于绝缘层背离所述基底一侧的像素电极，所述连接电极与所述像素电极同层设置且材料相同；所述绝缘层对应所述漏极的位置设置有第三过孔，所述像素电极通过所述第三过孔与所述漏极电连接。
解决本发明技术问题所采用的技术方案是一种显示装置，包括上述任意一种显示基板。
解决本发明技术问题所采用的技术方案是一种薄膜晶体管的制备方法，包括在基底上形成源极、漏极和有源层的步骤，所述有源层包括第一有源层和第二有源层，所述第一有源层的载流子迁移率小于所述第二有源层的载流子迁移率，且所述第二有源层相对所述第一有源层更靠近所述源极和漏极；
形成源极、漏极的步骤包括：通过构图工艺在基底上对应所述第二有源层区域内分别形成源极和漏极。
解决本发明技术问题所采用的技术方案是一种显示基板的制备方法，包括：
在基底上形成薄膜晶体管的有源层，所述有源层包括第一有源层和第二有源层，所述第一有源层的载流子迁移率小于所述第二有源层的载流子迁移率；
通过一次构图工艺在基底上分别形成数据线和所述薄膜晶体管的源极、漏极；所述第二有源层相对所述第一有源层更靠近所述源极和漏极，且所述源极和所述漏极在所述基底上的正投影落入所述第二有源层的在所述基底上的正投影内；
在形成有所述数据线、源极和漏极的基底上形成绝缘层，并通过构图工艺在所述绝缘层对应所述数据线的位置形成第一过孔，在所述绝缘层对应所述源极的位置形成第二过孔；
通过构图工艺在完成上述步骤的基底上形成连接电极，所述连接电极通过所述第一过孔和所述第二过孔与所述数据线和所述源极电连接。
附图说明
图1为本发明的实施例的薄膜晶体管的结构示意图；
图2为本发明的实施例的显示基板的结构示意图；
图3为本发明的实施例的薄膜晶体管的制备方法中形成栅极的示意图；
图4为本发明的实施例的薄膜晶体管的制备方法中形成栅绝缘层的示意图；
图5为本发明的实施例的薄膜晶体管的制备方法中形成有源层的示意图；
图6为本发明的实施例的薄膜晶体管的制备方法中形成源极、漏极的示意图；
图7为本发明的实施例的显示基板的制备方法中形成的数据线的示意图；
图8为本发明的实施例的显示基板的制备方法中形成绝缘层的示意图；
图9为本发明的实施例的显示基板的制备方法中形成连接电极、像素电极的示意图；
其中附图标记为：1、基底；2、栅极；3、栅绝缘层；41、第一有源层；42、第二有源层；5、源极；6、漏极；7、欧姆接触层；8、数据线；9、绝缘层；10、连接电极；11、像素电极。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
本发明提供一种薄膜晶体管，可为顶栅型薄膜晶体管或者底栅型薄膜晶体管。该薄膜晶体管包括基底以及位于基底上的栅极、栅绝缘层、源极、漏极和有源层等结构。其中，有源层包括第一有源层和第二有源层，第一有源层的载流子迁移率大于第二有源层的载流子迁移率，且第二有源层相对第一有源层更靠近源极和漏极，以通过第二有源层的设置减小薄膜晶体管的漏电流。具体的，第一有源层的材料为非晶硅；第二有源层的材料为多晶硅。
实施例1：
如图1所示，本实施例提供一种薄膜晶体管，具体以底栅型薄膜晶体管为例进行说明。具体的，如图1所示，本实施例的薄膜晶体管中，沿背离基底1的方向，依次设置有栅极2、栅绝缘层3、第一有源层41、第二有源层42，以及源极5和漏极6所在层。
特别的是，本实施例的薄膜晶体管中，源极5和漏极6在基底1上的正投影都落入第二有源层42在基底1上的正投影内。
如图1所示，本实施例的薄膜晶体管中，源极5的在基底1上的正投影落入第二有源层42在基底1上的正投影内，漏极6在基底1上的正投影也落入第二有源层42在基底1上的正投影，且可以理解的是，源极5和漏极6在基底上的正投影是分开的，无重叠。二者与位于第二有源层42下方的第一有源层41不直接接触，通过此种设置方式，使得当薄膜晶体管工作时，电流从源极5流出后，进入第二有源层42，且由于第一有源层41的载流子迁移率较第二有源层42的载流子迁移率更大，故电流会继续流入第一有源层41，之后再经由第二有源层42进入漏极6。即通过令源极5和漏极6与第一有源层41不接触，从而使本实施例中的薄膜晶体管中只会构成源极5-第二有源层42-第一有源层41-第二有源层42-漏极6的电流通道，而不会出现由源极5-第一有源层41-漏极6所构成的电流通道，进而避免由于由源极5-第一有源层41-漏极6所构成的电流通道所导致的薄膜晶体管漏电流较大的问题。
优选的，本实施例的薄膜晶体管中还包括：位于源极5与第二有源层42之间、位于漏极6与第二有源层42之间的欧姆接触层7。该欧姆接触层7可减小第二有源层42与源极5、漏极6之间的接触电阻，从而提高薄膜晶体管的性能。其中，可以理解的是，欧姆接触层7应只位于源极5与第二有源层42之间、漏极6与第二有源层42之间，也不会与第一有源层41直接接触，以保证薄膜晶体管不会出现源极5-欧姆接触层7-第一有源层41-欧姆接触层7-漏极6构成的电流通道，从而保证薄膜晶体管的漏电流不会太大。
在此需要说明的是，本实施例中的薄膜晶体管并不限制于底栅型薄膜晶体管，也可以为其它类型的薄膜晶体管，例如顶栅型薄膜晶体管，只要薄膜晶体管的结构满足本实施例的中源极5和漏极6在基底1上的正投影落入第二有源层42在基底1上的正投影内即可。
实施例2：
如图2所示，本实施例提供一种显示基板，包括设置于基底1上的薄膜晶体管，以及与薄膜晶体管的源极5电连接的数据线8。其中，薄膜晶体管可为实施例1中提供的任意一种薄膜晶体管，故本实施例的显示基板的漏电流较小，显示性能较好。
具体的，本实施例的显示基板中，数据线8与薄膜晶体管绝缘设置，二者通过连接电极10实现电连接。如图2所示，源极5所在层上方(图2中背离基底1的一侧)设置有绝缘层9，绝缘层9对应源极5的位置设置有第一过孔，过孔中设置有连接电极10，连接电极10的一端与源极5连接，另一端与数据线8连接，从而实现数据线8与薄膜晶体管的源极5的电连接。
优选的，如图2所示，数据线8、薄膜晶体管的源极5、漏极6都位于绝缘层9的下方(图2中靠近基底1的一侧)，绝缘层9对应源极5的位置设置有第二过孔；连接电极10通过第一过孔和第二过孔与数据线8和源极5电连接。
其中，数据线8可与源极5、漏极6同层设置且材料相同，即数据线8可与源极5、漏极6采用一次构图工艺形成，以简化显示基板的制备工艺。具体的，数据线8、源极5、漏极6的材料可为金属，如铜、铝等。
优选的，本实施例中的显示基板还包括：像素电极11，其设置于绝缘层9背离基底1一侧；绝缘层9对应漏极6的位置设置有第三过孔，像素电极11通过第三过孔与漏极6电连接。其中，连接电极10可与像素电极11同层设置且材料相同，也即像素电极11可与连接电极10通过一次构图工艺形成。具体的，连接电极10、像素电极11的材料可为ITO(氧化铟锡)、IZO(氧化铟锌)、IGZO(氧化铟镓锌)、InGaSnO(氧化铟镓锡)等。
实施例3：
本实施例提供一种显示装置，包括实施例2中提供的任意一种显示基板。
其中，显示装置可以为液晶显示装置或者电致发光显示装置，例如电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本实施例中的显示装置的电路中具有较小的漏电流和较好的显示质量。
实施例4：
如图3-6所示，本实施例提供一种薄膜晶体管的制备方法，具体以底栅型薄膜晶体管，且有源层位于源极5、漏极6所在层靠近基底1一侧为例进行说明。该薄膜晶体管的制备方法包括：
S1、通过构图工艺在基底1上形成栅极2。
如图3所示，本步骤中，可采用溅射方式、热蒸发方式、等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式形成栅金属膜，并通过刻蚀工艺形成栅极2的图形。
S2、在基底1上形成栅绝缘层3。
如图4所示，本步骤中可采用等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式或溅射方式在形成有栅极2的基底1上形成栅绝缘层3。
S3、在基底1上形成有源层的图形；其中，有源层包括第一有源层41和第二有源层42，第一有源层41的载流子迁移率小于第二有源层42的载流子迁移率，且第一有源层41相对第二有源层42更靠近栅绝缘层3。
即如图5所示，本实施例所形成的薄膜晶体管中，第二有源层42相对第一有源层41更靠近源极5和漏极6所在层。其中，优选的，第一有源层41的材料为非晶硅；第二有源层42的材料为多晶硅。
具体的，步骤S3可包括：
S31、在基底1上依次形成多晶硅材料层和非晶硅材料层。
具体的，可通过离子体增强化学气相沉积、低压化学气相沉积方式等沉积方式在基底1上形成一层非晶硅材料层，并对该非晶硅材料层进行晶化，从而形成多晶硅材料层。之后，再次通过沉积工艺在多晶硅材料层上方形成非晶硅材料层。
其中，晶化方式可包括采用准分子激光晶化方式、金属诱导晶化方式或固相晶化方式，将非晶硅材料层转变为多晶硅材料层(p-Si)。
S32、通过一次刻蚀工艺形成第一有源层41和第二有源层42。
采用一次构图工艺对步骤S31中形成的多晶硅材料层和非晶硅材料层进行处理，从而形成包括第一有源层41和第二有源层42的图形。本步骤中具体可在非晶硅膜上形成一层光刻胶，对光刻胶进行曝光和显影，然后对进行刻蚀，从而形成包括有源层的图形。
S4、通过构图工艺在基底1上形成源极5、漏极6的图形。
如图6所示，本步骤包括：通过构图工艺在基底1上对应第二有源层42的区域内分别形成源极5和漏极6。具体的，本步骤中可采用溅射、热蒸发、化学气相沉积等方式在基底1上形成源漏金属膜，然后通过成膜、曝光、显影、湿法刻蚀或干法刻蚀等工艺，同时形成包括源极5、漏极6的图形。
本实施例所形成的薄膜晶体管中，源极5和漏极6在基底1上的正投影皆落入第二有源层42在基底1上的正投影中，二者与位于第二有源层42下方的第一有源层41不接触，从而不会出现由源极5-第一有源层41-漏极6所构成的电流通道，进而避免由此种电流通道所导致的薄膜晶体管漏电流较大的问题。
实施例5：
如图3至9所示，本实施例提供一种显示基板的制备方法，其中，显示基板包括薄膜晶体管，以及与薄膜晶体管的源极5连接的数据线8。
本实施例提供的显示基板的制备方法中，薄膜晶体管的制备方法可参考实施例4中提供的薄膜晶体管的制备方法。数据线8的制备方法可参考实施例4中薄膜晶体管的源漏极6的制备方法。其中，优选的，如图7所示，数据线8可与薄膜晶体管的源极5、漏极6通过一次构图工艺形成。即在制备源源极5、漏极6时，可通过掩膜板的设计在基底1上一次形成数据线8、源极5、漏极6，以简化显示基板的制备工艺。
本实施例中，在形成薄膜晶体管、数据线8后还包括以下步骤：
S5、在形成有数据线8、薄膜晶体管的基底1上形成绝缘层9，并通过构图工艺在绝缘层9对应数据线8的位置形成第一过孔，在绝缘层9对应源极5的位置形成第二过孔。
其中，如图8所示，与沉积栅绝缘层3的方式相同，绝缘层9可采用等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式沉积形成，并可通过刻蚀工艺在绝缘层9上形成对应数据线8的位置形成第一过孔，在绝缘层9对应源极5的位置形成第二过孔。
S6、通过构图工艺在完成上述步骤的基底1上形成连接电极10，连接电极10通过第一过孔和第二过孔与数据线8和源极5电连接。
具体的，如图9所示，本步骤中可用溅射方式、热蒸发方式或化学气相沉积方式等沉积导电金属膜。然后通过刻蚀工艺形成连接电极10的图形。其中，导电金属膜的材料可为ITO、IZO、IGZO、InGaSnO等。
优选的，本实施例的步骤S5中还可在绝缘层9对应漏极6的位置形成第三过孔，并在步骤S6中通过一次构图工艺在形成连接电极10的同时形成像素电极11，像素电极11通过第三过孔与薄膜晶体管的漏极6连接。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种薄膜晶体管，包括基底，以及位于所述基底之上的源极、漏极和有源层，其特征在于，所述有源层包括第一有源层和第二有源层，所述第一有源层的载流子迁移率大于所述第二有源层的载流子迁移率，且所述第二有源层相对所述第一有源层更靠近所述源极和漏极；所述源极和所述漏极在所述基底上的正投影落入所述第二有源层的在所述基底上的正投影内。
2.根据权利要求1所述的薄膜晶体管，其特征在于，还包括：位于源极与所述第二有源层之间、位于所述漏极与所述第二有源层之间的欧姆接触层。
3.根据权利要求1所述的薄膜晶体管，其特征在于，所述第一有源层的材料为非晶硅；所述第二有源层的材料为多晶硅。
4.一种显示基板，包括设置于基底上的薄膜晶体管，其特征在于，所述薄膜晶体管为权利要求1至3中任意一项所述的薄膜晶体管。
5.根据权利要求4所述的显示基板，其特征在于，还包括设置于基底上的数据线，所述数据线与所述源极、所述漏极同层设置且材料相同；
所述数据线通过连接电极与所述源极电连接。
6.根据权利要求5所述的显示基板，其特征在于，所述显示基板还包括：设置于所述源极、所述漏极和所述数据线所在层背离所述基底一侧的绝缘层；所述绝缘层对应所述数据线的位置设置有第一过孔，所述绝缘层对应所述源极的位置设置有第二过孔；所述连接电极通过所述第一过孔和所述第二过孔与所述数据线和所述源极电连接。
7.根据权利要求6所述的显示基板，其特征在于，还包括：设置于绝缘层背离所述基底一侧的像素电极，所述连接电极与所述像素电极同层设置且材料相同；所述绝缘层对应所述漏极的位置设置有第三过孔，所述像素电极通过所述第三过孔与所述漏极电连接。
8.一种显示装置，其特征在于，包括权利要求4至7中任意一项所述的显示基板。
9.一种薄膜晶体管的制备方法，包括在基底上形成源极、漏极和有源层的步骤，其特征在于，所述有源层包括第一有源层和第二有源层，所述第一有源层的载流子迁移率小于所述第二有源层的载流子迁移率，且所述第二有源层相对所述第一有源层更靠近所述源极和漏极；
形成源极、漏极的步骤包括：通过构图工艺在基底上对应所述第二有源层区域内分别形成源极和漏极。
10.一种显示基板的制备方法，其特征在于，包括：
在基底上形成薄膜晶体管的有源层，所述有源层包括第一有源层和第二有源层，所述第一有源层的载流子迁移率小于所述第二有源层的载流子迁移率；
通过一次构图工艺在基底上分别形成数据线和所述薄膜晶体管的源极、漏极；所述第二有源层相对所述第一有源层更靠近所述源极和漏极，且所述源极和所述漏极在所述基底上的正投影落入所述第二有源层的在所述基底上的正投影内；
在形成有所述数据线、源极和漏极的基底上形成绝缘层，并通过构图工艺在所述绝缘层对应所述数据线的位置形成第一过孔，在所述绝缘层对应所述源极的位置形成第二过孔；
通过构图工艺在完成上述步骤的基底上形成连接电极，所述连接电极通过所述第一过孔和所述第二过孔与所述数据线和所述源极电连接。
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