CN109390424A - 贴膜全黑光伏组件及其制造方法 - Google Patents

贴膜全黑光伏组件及其制造方法 Download PDF

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CN109390424A
CN109390424A CN201811358964.8A CN201811358964A CN109390424A CN 109390424 A CN109390424 A CN 109390424A CN 201811358964 A CN201811358964 A CN 201811358964A CN 109390424 A CN109390424 A CN 109390424A
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陈海龙
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Jiangsu Embellish Photovoltaic Wuxi Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/0481Encapsulation of modules characterised by the composition of the encapsulation material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/049Protective back sheets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876Particular processes or apparatus for batch treatment of the devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

本发明提供一种贴膜全黑光伏组件,包括:光伏电池片、串接带、汇流条、玻璃、黑背板、黑膜;多个光伏电池片通过串接带串联焊接成电池串;各电池串并行排列;采用汇流条将电池串的串与串焊接连接;在串接带和汇流条表面贴有黑膜;所有电池串的正面和背面分别通过层压胶与玻璃、黑背板结合。进一步地,所述光伏组件的边缘安装有黑色边框。进一步地,层压胶采用EVA材料。贴膜全黑光伏组件的外观是全黑色的,没有白色或反光部位,提高了组件的美观程度,也不会产生光反射现象。

Description

贴膜全黑光伏组件及其制造方法
技术领域
本发明涉及一种光伏组件,尤其是一种贴膜全黑光伏组件。
背景技术
光伏晶硅组件是通过晶体硅PN结半导体将光能转换为电能的一个模块,简称光伏电池。光伏晶硅组件目前广泛应用于大型地面电站、屋面、船舶、航空等领域。
普通黑色光伏组件是将背板、边框等换成黑色的,但光伏组件在阳光下观察,串接带和汇流带部分会反光,光伏组件达不到全黑的效果;既在美观上有一定缺陷,也影响太阳光吸收效果。
发明内容
本发明的目的在于克服现有技术中存在的不足,提供一种贴膜全黑光伏组件及其制造方法,能够得到全黑的光伏组件,使得美观程度上升,无光反射现象。本发明采用的技术方案是:
一种贴膜全黑光伏组件,包括:光伏电池片、串接带、汇流条、玻璃、黑背板、黑膜;
多个光伏电池片通过串接带串联焊接成电池串;各电池串并行排列;采用汇流条将电池串的串与串焊接连接;在串接带和汇流条表面贴有黑膜;
所有电池串的正面和背面分别通过层压胶与玻璃、黑背板结合。
进一步地,所述光伏组件的边缘安装有黑色边框。
进一步地,层压胶采用EVA材料。
进一步地,各电池串的串与串之间留有2~3mm宽的间隙。
进一步地,黑膜采用PET膜。
一种贴膜全黑光伏组件的制造方法,包括:
首先用串接带将多个光伏电池片串联焊接成电池串;
接着,在电池串的串接带表面贴黑膜;
然后在生产线上平放玻璃;在玻璃上铺设层压胶;
接着将各电池串正面朝向玻璃进行排版,各电池串并行排列,串与串之间留有间隙;采用汇流条将电池串的串与串焊接连接;
然后在汇流条表面贴黑膜;
随后所有电池串背面铺设层压胶;
接着在光伏组件背面铺设黑背板,然后将待层压的光伏组件通过层压机进行层压;
层压结束后,安装黑色边框,得到光伏组件的成品。
本发明的优点在于:
1)贴膜全黑光伏组件经过老化测试,性能外观无影响。
2)贴膜全黑光伏组件的外观是全黑色的,没有白色或反光部位,提高了组件的美观程度,也不会产生光反射现象。
3)贴膜全黑光伏组件可减少光污染。
附图说明
图1为普通黑色光伏组件结构示意图。
图2为普通黑色光伏组件的工艺流程图。
图3为本发明的贴膜全黑光伏组件结构示意图。
图4为本发明的贴膜全黑光伏组件的工艺流程图。
具体实施方式
下面结合具体附图和实施例对本发明作进一步说明。
如图1和图2所示,普通的黑色光伏组件常规封装工艺是:
首先用串接带2(例如镀锡铜带)将多个光伏电池片1串联焊接成电池串;
然后在生产线上平放玻璃3,该玻璃用于光伏组件正面保护;在玻璃3上铺设EVA材料作为层压胶4;
接着将各电池串正面朝向玻璃3进行排版,各电池串并行排列,串与串之间留有2~3mm宽的间隙;采用汇流条将电池串3的串与串焊接连接;
随后在排版后的所有电池串背面铺设层压胶5;层压胶5也采用EVA材料;
接着在光伏组件背面铺设黑背板6,然后将待层压的光伏组件通过层压机进行层压;
层压结束后,安装黑色边框,得到光伏组件的成品。
如图3和图4所示,本发明提出的贴膜全黑光伏组件的封装工艺是:
首先用串接带2(例如镀锡铜带)将多个光伏电池片1串联焊接成电池串;
接着,在电池串的串接带2表面贴黑膜7,该黑膜7的材料为PET膜;
然后在生产线上平放玻璃3,该玻璃用于光伏组件正面保护;在玻璃3上铺设EVA材料作为层压胶4;
接着将各电池串正面朝向玻璃3进行排版,各电池串并行排列,串与串之间留有2~3mm宽的间隙;采用汇流条将电池串3的串与串焊接连接;
然后在汇流条表面贴黑膜7,黑膜7的材料为PET膜;
随后所有电池串背面铺设层压胶5;层压胶5也采用EVA材料;
接着在光伏组件背面铺设黑背板6,然后将待层压的光伏组件通过层压机进行层压;
层压结束后,安装黑色边框,得到光伏组件的成品。
在其它的实施例中,层压胶也可以采用透明硅胶。
贴膜全黑光伏组件,在环境老化试验后,IV测试(功率测试)和EL测试(电致发光测试)无变化,表明了其优越的可靠性性能;下表显示了老化前后的参数;Pmax最大功率、RsVoc开路电压、RsIsc短路电流、RsVpm最大功率点电压、RsIpm最大功率点电流。
最后所应说明的是,以上具体实施方式仅用以说明本发明的技术方案而非限制,尽管参照实例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围,其均应涵盖在本发明的权利要求范围当中。

Claims (8)

1.一种贴膜全黑光伏组件,其特征在于,包括:光伏电池片、串接带、汇流条、玻璃、黑背板、黑膜;
多个光伏电池片通过串接带串联焊接成电池串;各电池串并行排列;采用汇流条将电池串的串与串焊接连接;在串接带和汇流条表面贴有黑膜;
所有电池串的正面和背面分别通过层压胶与玻璃、黑背板结合。
2.如权利要求1所述的贴膜全黑光伏组件,其特征在于,
所述光伏组件的边缘安装有黑色边框。
3.如权利要求1所述的贴膜全黑光伏组件,其特征在于,
层压胶采用EVA材料。
4.如权利要求1所述的贴膜全黑光伏组件,其特征在于,
各电池串的串与串之间留有2~3mm宽的间隙。
5.如权利要求1所述的贴膜全黑光伏组件,其特征在于,
黑膜采用PET膜。
6.一种贴膜全黑光伏组件的制造方法,其特征在于,包括:
首先用串接带将多个光伏电池片串联焊接成电池串;
接着,在电池串的串接带表面贴黑膜;
然后在生产线上平放玻璃;在玻璃上铺设层压胶;
接着将各电池串正面朝向玻璃进行排版,各电池串并行排列,串与串之间留有间隙;采用汇流条将电池串的串与串焊接连接;
然后在汇流条表面贴黑膜;
随后所有电池串背面铺设层压胶;
接着在光伏组件背面铺设黑背板,然后将待层压的光伏组件通过层压机进行层压;
层压结束后,安装黑色边框,得到光伏组件的成品。
7.如权利要求6所述的贴膜全黑光伏组件的制造方法,其特征在于,
黑膜的材料为PET膜。
8.如权利要求6所述的贴膜全黑光伏组件的制造方法,其特征在于,
层压胶采用EVA材料。
CN201811358964.8A 2018-11-15 2018-11-15 贴膜全黑光伏组件及其制造方法 Pending CN109390424A (zh)

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CN112750920A (zh) * 2020-12-31 2021-05-04 杭州唐能能源科技有限公司 一种太阳能电池板的制作工艺
CN114583001A (zh) * 2020-12-01 2022-06-03 苏州阿特斯阳光电力科技有限公司 光伏组件及其制作方法
CN115548167A (zh) * 2022-12-02 2022-12-30 苏州小牛自动化设备有限公司 电池串制备方法、光伏组件制备方法及电池串制备设备

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CN114583001A (zh) * 2020-12-01 2022-06-03 苏州阿特斯阳光电力科技有限公司 光伏组件及其制作方法
CN114583001B (zh) * 2020-12-01 2024-03-08 苏州阿特斯阳光电力科技有限公司 光伏组件及其制作方法
CN112750920A (zh) * 2020-12-31 2021-05-04 杭州唐能能源科技有限公司 一种太阳能电池板的制作工艺
CN112750920B (zh) * 2020-12-31 2023-04-07 杭州唐能能源科技有限公司 一种太阳能电池板的制作工艺
CN115548167A (zh) * 2022-12-02 2022-12-30 苏州小牛自动化设备有限公司 电池串制备方法、光伏组件制备方法及电池串制备设备

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