CN109371466A - A kind of growth of carborundum crystals electric-resistivity method power supply and its method - Google Patents
A kind of growth of carborundum crystals electric-resistivity method power supply and its method Download PDFInfo
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- CN109371466A CN109371466A CN201811419792.0A CN201811419792A CN109371466A CN 109371466 A CN109371466 A CN 109371466A CN 201811419792 A CN201811419792 A CN 201811419792A CN 109371466 A CN109371466 A CN 109371466A
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- growth
- electric
- storehouse
- power supply
- heating ring
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
Abstract
A kind of carborundum crystals electric-resistivity method growth power supply, including shell, grow storehouse and transmission storehouse, growth storehouse and transmission storehouse are equipped in shell, grow the fixed thermal insulation layer of storehouse inner wall, tungsten heating ring is mounted equidistant in thermal insulation layer inner wall, the outer side of shell is equipped with several power-supply controller of electric, and power-supply controller of electric and tungsten heating ring respectively correspond circuit connection, power-supply controller of electric integrated circuit is connected with FPGA, and FPGA connection computer, this power supply programs power-supply controller of electric by the control system of computer and the use of FPGA, the temperature of each tungsten heating ring can individually be controlled, convenient for adjusting, save electric energy, stable temperature control, Mass accuracy is high.
Description
Technical field
The present invention relates to artificial production silicon carbide technology field, power supply is used in specially a kind of carborundum crystals electric-resistivity method growth
And its method.
Background technique
Silicon carbide is the common name of other color sapphires in sapphire in addition to ruby, and main component is oxidation
Aluminium, blue silicon carbide are due to caused by being wherein mixed with a small amount of titanium and iron tramp, and industrial silicon carbide is that military vehicle is used as thoroughly
The material of bright plate armour, in addition to diamond, the hardness of silicon carbide is better than other any natural materials, and silicon carbide is non-for industrial use
Chang great gradually develops Artificial Growth since natural silicon carbide is very rare, and the process of growing silicon carbice crystals wishes power supply very
Stablize and be adapted to, crystal growth in the prior art is an entirety with heating element of tungsten, when the height of crystal growth is very high, all
High temperature is heated to without this necessity, only crystal growth position needs high temperature, and other positions, especially separate location do not need, instead
And the service life of various equipment is also reduced, also waste of energy, for this purpose, it is proposed that power supply is used in a kind of growth of carborundum crystals electric-resistivity method
And its method.
Summary of the invention
The purpose of the invention is to overcome the reply energy conservation of the prior art and adapt to gradient temperature field scarce capacity, pass through
Power supply and tungsten the heating ring of separate type it is integrated, the application gives a kind of part heating plate underheat or does not heat,
It can equally be solved the problems, such as in a manner of saving, and energy saving technical solution.And it is stable, energy-saving to provide a kind of performance
Carborundum crystals electric-resistivity method growth power supply and its method, including shell, growth storehouse and transmission storehouse, the interior of shell is equipped with
Storehouse and transmission storehouse are grown, growth storehouse inner wall is fixed with thermal insulation layer, and several tungsten heating rings have been mounted equidistant in thermal insulation layer inner wall,
The outer side of shell is equipped with several power-supply controller of electric, and power-supply controller of electric and tungsten heating ring respectively correspond circuit connection, described
Power-supply controller of electric integrated circuit is connected with FPGA, and FPGA circuitry is connected with computer.
Preferably, the cover top portion, which is located in growth storehouse, is fixed with sunpender, and sunpender bottom end is fixed with seed crystal.
It is equipped with round crucible preferably, being located on the outside of seed crystal in the growth storehouse, and round crucible bottom is fixed with support
Plate, the supporting plate bottom surface is fixedly connected with screw shell, and screw shell bottom end passes through heat-insulated be placed on and is driven inside storehouse, described
Transmission storehouse bottom center is rotatably equipped with threaded rod, and threaded rod tip engages connection with screw shell.In the growth storehouse
It is installed on multiple temperature probes being evenly distributed.The power-supply controller of electric is applied to correspondence by automatically controlled slide rheostat control
Tungsten heating ring virtual voltage load value.
Preferably, the threaded rod Basolateral is arranged with driven wheel of differential, the transmission orlop portion is equipped with rotation
Motor, and rotary electric machine output end is equipped with drive bevel gear, the drive bevel gear engages connection with driven wheel of differential.
Preferably, the screw shell bottom end is fixed with guide plate, it is symmetrical to be located at threaded rod two sides in the transmission storehouse
It is fixed with slide bar, and sliding bar passes through guide plate.
It is made preferably, the screw shell, supporting plate and sunpender are all made of tungsten alloy.
Preferably, the thermal insulation layer is made of zirconia brick.
Preferably, the drive bevel gear and driven wheel of differential transmission ratio are five to one.
A kind of carborundum crystals electric-resistivity method growth long crystal method of cooperation of power supply, according to a kind of carborundum crystals
Electric-resistivity method growth power supply is to implement, characterized by the following steps:
1) preparation process: default power supply control plan is needed according to crystal growth, according to preset crystal growth rate, often
Phase temperature requirement, sets out the power output value of each power-supply controller of electric as time goes by, forms default power supply control meter
It draws, power-supply controller of electric is programmed by the control system of computer and the use of FPGA, can individually control automatically controlled sliding variable resistance
Device adjusts the temperature of each tungsten heating ring indirectly；
2) manoeuvre step: in the case where not practical seeding, simulating seeding process, in the mistake that round crucible and supporting plate rise
It is heated in journey according to default power supply control plan, with temperature everywhere in preassembled multiple temperature probe measurement growth storehouses
Whether meet expection, if the regression coefficient R that temperature curve deviates expecting curve everywhere is respectively less than 0.95, enter step (3),
Otherwise it returns to step (1), readjusts default power supply control plan.
3) to the heating ring pressurization heating of the top tungsten, melt the raw material in round crucible；After raw material melts, pass through sliding
The voltage that rheostat adjusts tungsten heating ring makes bath surface convection current form stable in round crucible, and seed crystal is eliminated internal stress, and
Stablize with melt position.
4) seed crystal starts shouldering, increases voltage and seed crystal shouldering is promoted to complete, then reducing voltage forms crystal growth, at this time
Next layer of tungsten heating circumstance temperature degree is controlled to gradually rise.
5) opening rotary electric machine and slowly rotate rotates threaded rod by the conduction of drive bevel gear and driven wheel of differential, from
And screw shell is made to drive round crucible as the growth length of crystal moves down, and after the decline of round crucible, original position
Tungsten heating ring also can gradually cooperate reductions with the dropping distance voltage of round crucible, until to slide to 0 electric for slide rheostat
Resistance value position stops logical pressure heating.
6) round crucible reaches minimum point, and corresponding tungsten heating ring pressurization makes crystal smoothly finish up, then be depressured until stopping
Work, long crystalline substance terminate.
The beneficial effects of the present invention are:
1, the present invention programs power-supply controller of electric by the control system of computer and the use of FPGA, can individually control
The temperature of each tungsten heating ring is adjusted, the position temperature convenient for adjusting remote with growth of silicon carbide positional distance is gradually decreased, saved
The consumption of electric energy, and extend the service life of equipment.It is said from energy-efficient angle, the tungsten heater of bulk is kept for 1000 degree or more
Height consumes a large amount of electric energy, but crystal is allowed to keep temperature in fact, and the temperature is all heated to without monolith, actually if split
Ring is heated at multiple tungsten, during crystal rises, it is only necessary to convey crystal growth apart from close position and keep sufficiently high temperature
?.The gradient temperature difference is also purposely needed sometimes, and such problems application scheme can solve.
2, the present invention is melted the raw material in round crucible, after raw material melts, is adjusted to the heating ring pressurization heating of the top tungsten
The voltage of section tungsten heating ring makes bath surface convection current form stable in round crucible, increases voltage and seed crystal shouldering is promoted to complete, then
Reducing voltage forms crystal growth, and screw shell drives round crucible as the growth length of crystal moves down, round earthenware
Crucible reaches minimum point, and corresponding tungsten heating ring pressurization makes crystal smoothly finish up, then be depressured until stopping working, and long crystalline substance terminates, this
Growing silicon carbice crystals device, stable temperature control accelerate the speed of growth of silicon carbide, and growth quality precision is high.
It 3, is that the output loading of each power supply does not have to practical adjustment, and is using the benefit of automatically controlled slide rheostat
The load situation for adjusting slide rheostat, can adjust practical heating amount/temperature pari passu, and this adjustment linearly downgraded
It is easy, accurate and effective.
Detailed description of the invention
Fig. 1 is whole schematic cross-sectional view of the invention；
Fig. 2 is circuit control structure schematic diagram of the present invention.
In figure: 1, shell；2, storehouse is grown；3, it is driven storehouse；4, thermal insulation layer；5, tungsten heats ring；6, sunpender；7, seed crystal；8, circle
Shape crucible；9, supporting plate；10, screw shell；11, guide plate；12, slide bar；13, threaded rod；14, driven wheel of differential；15, initiative taper
Gear；16, rotary electric machine；17, power-supply controller of electric；18,FPGA；19, computer.
Specific embodiment
Any feature disclosed in this specification unless specifically stated can be equivalent or with similar purpose by other
Alternative features are replaced.That is, unless specifically stated, each feature is an example in a series of equivalent or similar characteristics
?.
A kind of carborundum crystals electric-resistivity method growth power supply as Figure 1-Figure 2, including shell 1, growth storehouse 2 and transmission
Storehouse 3, growth storehouse 2 and transmission storehouse 3 are equipped with inside the shell 1, and 2 inner wall of growth storehouse is fixed with thermal insulation layer 4, and thermal insulation layer 4
Several tungsten heating rings 5 have been mounted equidistant in inner wall, are equipped with several power-supply controller of electric 17, and power-supply controller of electric on the outside of the shell 1
17 respectively correspond circuit connection with tungsten heating ring 5, and 17 integrated circuit of power-supply controller of electric is connected with FPGA18, and FPGA18 electricity
Road is connected with computer 19.
It is located in growth storehouse 2 at the top of the shell 1 and is fixed with sunpender 6, and 6 bottom end of sunpender is fixed with seed crystal 7, passes through seed crystal
7 are used as foundation, carry out growth silicon carbide.
It is located on the outside of seed crystal 7 in the growth storehouse 2 and is equipped with round crucible 8, and 8 bottom of round crucible is fixed with supporting plate 9, institute
It states 9 bottom surface of supporting plate and is fixedly connected with screw shell 10, and 10 bottom end of screw shell passes through thermal insulation layer 4 and is placed in inside transmission storehouse 3, institute
It states transmission 3 bottom center of storehouse and is rotatably equipped with threaded rod 13, and connection is engaged with screw shell 10 in 13 top of threaded rod, passes through
The rotation of threaded rod 13 is to control the lifting that screw shell 10 drives round crucible 8, so that it is guaranteed that producing the length of blue crystal.Institute
It states in growth storehouse and is installed on multiple temperature probes being evenly distributed.The power-supply controller of electric 17 passes through automatically controlled slide rheostat control
System is applied to the virtual voltage load value of corresponding tungsten heating ring 5.
13 Basolateral of threaded rod is arranged with driven wheel of differential 14, and 3 bottom of transmission storehouse is equipped with rotary electric machine
16, and 16 output end of rotary electric machine is equipped with drive bevel gear 15, the drive bevel gear 15 and 14 company of engagement of driven wheel of differential
It connects, the rotation of rotary electric machine 16, the lifting of round crucible 8 is realized by the transmission of drive bevel gear 15 and driven wheel of differential 14.
10 bottom end of screw shell is fixed with guide plate 11, and it is symmetrically solid to be located at 13 two sides of threaded rod in the transmission storehouse 3
Surely there is slide bar 12, and slide bar 12 slides through guide plate 11.
The screw shell 10, supporting plate 9 and sunpender 6 are all made of tungsten alloy and are made, and fusing point is high, heat-resist.
The thermal insulation layer 4 is made of zirconia brick, and heat resistance is good, and temperature isolation performance is good.
The drive bevel gear 15 is five to one with 14 transmission ratio of driven wheel of differential, slows down the revolving speed of threaded rod 13, is improved
Height adjustment precision.
A kind of carborundum crystals electric-resistivity method growth long crystal method of cooperation of power supply, according to a kind of carborundum crystals electric-resistivity method
Growth power supply is to implement, characterized by the following steps:
1) preparation process: default power supply control plan is needed according to crystal growth, according to preset crystal growth rate, often
Phase temperature requirement, sets out the power output value of each power-supply controller of electric as time goes by, forms default power supply control meter
It draws, power-supply controller of electric 17 is programmed by the control system of computer 19 and the use of FPGA18, can individually control automatically controlled cunning
Dynamic rheostat adjusts the temperature of each tungsten heating ring 5 indirectly.
2) manoeuvre step: in the case where not practical seeding, simulating seeding process, rises in round crucible 8 and supporting plate 9
It is heated in the process according to default power supply control plan, everywhere in preassembled multiple temperature probe measurement growth storehouses 2
Whether temperature meets expection, if the regression coefficient R that temperature curve deviates expecting curve everywhere is respectively less than 0.95, enters step
(3), it otherwise returns to step (1), readjusts default power supply control plan.
3) to the heating pressurization heating of ring 5 of the top tungsten, melt the raw material in round crucible 8；After raw material melts, pass through cunning
The voltage that dynamic rheostat adjusts tungsten heating ring 5 makes bath surface convection current form stable in round crucible 8, and seed crystal 7 is eliminated interior answer
Power, and stablize with melt position.
4) seed crystal 7 starts shouldering, increases voltage and 7 shouldering of seed crystal is promoted to complete, then reducing voltage forms crystal growth, this
When control next layer of tungsten heating 5 temperature of ring and gradually rise.
5) opening rotary electric machine 16 and slowly rotate makes threaded rod by the conduction of drive bevel gear 15 and driven wheel of differential 14
13 rotations, to make screw shell 10 drive round crucible 8 as the growth length of crystal moves down, when under round crucible 8
After drop, the tungsten heating ring 5 of original position also can gradually cooperate reduction with the dropping distance voltage of round crucible 8, until sliding
Dynamic rheostat slides to 0 resistance value position, stops logical pressure heating.
6) round crucible 8 reaches minimum point, and corresponding tungsten heating ring 5 pressurizes, and so that crystal is smoothly finished up, then be depressured until stopping
It only works, long crystalline substance terminates.
The working principle of this specific embodiment:: by the control system of computer 19 and the use of FPGA18 to power supply control
Device 17 processed programs, and can individually control to adjust the temperature of each tungsten heating ring 5, to the heating pressurization heating of ring 5 of the top tungsten, makes to justify
Raw material in shape crucible 8 melts, and after raw material melts, the voltage for adjusting tungsten heating ring 5 makes in round crucible 8 bath surface to manifold
State is stablized, and seed crystal 7 is eliminated internal stress, and stablizes with melt position, and seed crystal 7 starts shouldering, increases voltage and promotes 7 shouldering of seed crystal
It completes, then reducing voltage forms crystal growth, controls next layer of tungsten heating 5 temperature of ring at this time and gradually rise, open rotation electricity
Machine 16, which is slowly rotated, rotates threaded rod 13 by the conduction of drive bevel gear 15 and driven wheel of differential 14, to make screw shell
10 drive round crucible 8 as the growth length of crystal moves down, after the decline of round crucible 8, the tungsten heating of original position
Ring 5 also can gradually cooperate with the dropping distance voltage of round crucible 8 decreases up to the logical pressure heating of stopping, and round crucible 8 arrives
Up to minimum point, corresponding tungsten heating ring 5 pressurizes, and so that crystal is smoothly finished up, then be depressured until stopping working, long crystalline substance terminates.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (6)
1. a kind of carborundum crystals electric-resistivity method growth power supply, including shell (1), growth storehouse (2) and transmission storehouse (3), feature
It is: is equipped with growth storehouse (2) and transmission storehouse (3) inside the shell (1), growth storehouse (2) inner wall is fixed with thermal insulation layer
(4), and several tungsten heating ring (5) have been mounted equidistant in thermal insulation layer (4) inner wall, and the shell (1) is if outside is equipped with supply control
Device (17) processed, and power-supply controller of electric (17) and tungsten heating ring (5) respectively correspond circuit connection, the power-supply controller of electric (17) is integrated
Circuit connection has FPGA (18), and FPGA (18) circuit connection has computer (19)；
It is located in growth storehouse (2) at the top of the shell (1) and is fixed with sunpender (6), and sunpender (6) bottom end is fixed with seed crystal (7)；
It is located on the outside of seed crystal (7) in the growth storehouse (2) and is equipped with round crucible (8), and round crucible (8) bottom is fixed with supporting plate
(9), supporting plate (9) bottom surface is fixedly connected with screw shell (10), and screw shell (10) bottom end passes through thermal insulation layer (4) and is placed in
Be driven that storehouse (3) are internal, and transmission storehouse (3) bottom center is rotatably equipped with threaded rod (13), and threaded rod (13) top and
Screw shell (10) engagement connection；
Multiple temperature probes being evenly distributed are installed in the growth storehouse (2)；
The power-supply controller of electric (17) is applied to the practical electricity of corresponding tungsten heating ring (5) by automatically controlled slide rheostat control
Press load value.
2. a kind of carborundum crystals electric-resistivity method growth power supply according to claim 1, it is characterised in that: the threaded rod
(13) Basolateral is arranged with driven wheel of differential (14), and transmission storehouse (3) bottom is equipped with rotary electric machine (16), and rotates electricity
Machine (16) output end is equipped with drive bevel gear (15), and the drive bevel gear (15) engages connection with driven wheel of differential (14).
3. a kind of carborundum crystals electric-resistivity method growth power supply according to claim 2, it is characterised in that: the thread bush
Cylinder (10) bottom end is fixed with guide plate (11), and threaded rod (13) two sides are located in the transmission storehouse (3) and are symmetrically fixed with slide bar
(12), and slide bar (12) slides through guide plate (11).
4. a kind of carborundum crystals electric-resistivity method growth power supply according to claim 3, it is characterised in that: the thread bush
Cylinder (10), supporting plate (9) and sunpender (6) are all made of tungsten alloy and are made.
5. a kind of carborundum crystals electric-resistivity method growth power supply according to claim 4, it is characterised in that: the thermal insulation layer
(4) it is made of zirconia brick；The drive bevel gear (15) and driven wheel of differential (14) transmission ratio are five to one.
6. a kind of carborundum crystals electric-resistivity method growth long crystal method of cooperation of power supply, a kind of carbon according to claim 5
SiClx crystal electric-resistivity method growth power supply is to implement, characterized by the following steps:
1) default power supply control plan, according to preset crystal growth rate, per stage preparation process: are needed according to crystal growth
Temperature requirement sets out the power output value of each power-supply controller of electric as time goes by, forms default power supply control plan, leads to
The use of the control system and FPGA (18) of crossing computer (19) programs power-supply controller of electric (17), can individually control automatically controlled cunning
Dynamic rheostat adjusts the temperature of each tungsten heating ring (5) indirectly；
2) manoeuvre step: in the case where not practical seeding, simulating seeding process, rises in round crucible (8) and supporting plate (9)
It is heated in the process according to default power supply control plan, grows each of storehouse (2) with preassembled multiple temperature probe measurements
Whether place's temperature meets expection, if the regression coefficient R that temperature curve deviates expecting curve everywhere is respectively less than 0.95, enters step
Suddenly (3) otherwise return to step (1), readjust default power supply control plan；
3) to the top tungsten heating ring (5) pressurization heating, melt the raw material in round crucible (8)；After raw material melts, pass through cunning
The voltage that dynamic rheostat adjusts tungsten heating ring (5) makes the interior bath surface convection current form stable of round crucible (8), and seed crystal (7) is disappeared
Stablize except internal stress, and with melt position；
4) seed crystal (7) starts shouldering, increases voltage and seed crystal (7) shouldering is promoted to complete, then reducing voltage forms crystal growth, this
When control next layer of tungsten heating ring (5) temperature and gradually rise；
5) opening rotary electric machine (16) and slowly rotate makes screw thread by the conduction of drive bevel gear (15) and driven wheel of differential (14)
Bar (13) rotation works as circle so that screw shell (10) be made to drive round crucible (8) as the growth length of crystal moves down
After crucible (8) decline, tungsten heating ring (5) of original position also can gradually match with the dropping distance voltage of round crucible (8)
Closing reduces, until slide rheostat slides to 0 resistance value position, stops logical pressure heating；
6) round crucible (8) reaches minimum point, and corresponding tungsten heating ring (5) pressurization makes crystal smoothly finish up, then be depressured until stopping
It only works, long crystalline substance terminates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811419792.0A CN109371466A (en) | 2018-11-26 | 2018-11-26 | A kind of growth of carborundum crystals electric-resistivity method power supply and its method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811419792.0A CN109371466A (en) | 2018-11-26 | 2018-11-26 | A kind of growth of carborundum crystals electric-resistivity method power supply and its method |
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| CN201811419792.0A Pending CN109371466A (en) | 2018-11-26 | 2018-11-26 | A kind of growth of carborundum crystals electric-resistivity method power supply and its method |
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