CN109346566A - A kind of gallium nitride based LED epitaxial slice and preparation method thereof - Google Patents

A kind of gallium nitride based LED epitaxial slice and preparation method thereof Download PDF

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Publication number
CN109346566A
CN109346566A CN201811014548.6A CN201811014548A CN109346566A CN 109346566 A CN109346566 A CN 109346566A CN 201811014548 A CN201811014548 A CN 201811014548A CN 109346566 A CN109346566 A CN 109346566A
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layer
sublayer
gallium nitride
electronics
thickness
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郭炳磊
王群
葛永晖
吕蒙普
李鹏
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HC Semitek Zhejiang Co Ltd
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HC Semitek Zhejiang Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials

Abstract

The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.The gallium nitride based LED epitaxial slice includes that substrate, electronics offer layer, active layer and hole provide layer, the electronics provides layer, the active layer and hole offer layer and stacks gradually over the substrate, the electronics provides layer including the first sublayer and is inserted in the second sublayer of at least one of first sublayer, the material of first sublayer uses the gallium nitride of doped silicon, the material of second sublayer uses the gallium nitride of doped carbon, and the thickness of first sublayer is greater than 1/2 that the electronics provides the thickness of layer.The present invention realizes that the plane of electronics is sprawled, reduces electronics and provide the series resistance of layer, enhance the antistatic effect of bottom by being inserted into the gallium nitride layer of at least one doped carbon in the gallium nitride layer of doped silicon.

Description

A kind of gallium nitride based LED epitaxial slice and preparation method thereof
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its preparation Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous Subcomponent.Gallium nitride (GaN) has good thermal conductivity, while having the good characteristics such as high temperature resistant, acid and alkali-resistance, high rigidity, Gallium nitride (GaN) base LED is set to receive more and more attention and study.
Epitaxial wafer is the primary finished product in LED preparation process.Existing LED epitaxial wafer include substrate, n type semiconductor layer, Active layer and p type semiconductor layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P-type semiconductor Layer carries out the hole of recombination luminescence for providing, and n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, and active layer is used for The radiation recombination for carrying out electrons and holes shines, and substrate is used to provide growing surface for epitaxial material.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The material of substrate generally selects sapphire, and the material of n type semiconductor layer etc. generally selects gallium nitride, sapphire and nitrogen Change gallium is dissimilar materials, and differences between lattice constant is larger, there is biggish lattice mismatch between the two.The stress that lattice mismatch generates It more can be introduced into gallium nitride with defect, and constantly be accumulated in epitaxial process, cause to accumulate in n type semiconductor layer more Stress and defect.
Epitaxial wafer carries out in the positive cartridge chip or flip-chip of chip technology formation simultaneously, the electricity in n type semiconductor layer Son is migrated along the direction vertical with the stacking direction of epitaxial wafer.In order to avoid the forward direction of positive cartridge chip or flip-chip Overtension, n type semiconductor layer would generally be thicker, are easy to draw when the N type dopants such as heavily-doped Si in this way in n type semiconductor layer Enter more defect and impurity.
More defect influences whether the extension of electronics in n type semiconductor layer, leads to point of the electronics in n type semiconductor layer Cloth is uneven, influences the antistatic effect of LED.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing The problem of extension for thering is defect more in technology n type semiconductor layer to influence whether electronics.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs Optical diode epitaxial wafer includes substrate, electronics provides layer, active layer and hole provide layer, and the electronics provides layer, described active Layer and the hole provide layer and stack gradually over the substrate, and the electronics provides layer including the first sublayer and is inserted in institute State the second sublayer of at least one of first sublayer, the material of first sublayer uses the gallium nitride of doped silicon, and described second The material of sublayer uses the gallium nitride of doped carbon, and the thickness of first sublayer is greater than 1/2 that the electronics provides the thickness of layer.
Optionally, second sublayer with a thickness of 2nm~50nm.
Preferably, the quantity of second sublayer is 3~50.
Optionally, the doping concentration of carbon is dense greater than the doping of element silicon in first sublayer in second sublayer Degree.
Preferably, the doping concentration of carbon is 10 in second sublayer18cm-3~1020cm-3。
On the other hand, the embodiment of the invention provides a kind of preparation method of gallium nitride based LED epitaxial slice, institutes Stating preparation method includes:
One substrate is provided；
Electronics is sequentially formed over the substrate, and layer, active layer and hole offer layer are provided；
Wherein, the electronics provides layer and includes the first sublayer and at least one of be inserted in first sublayer second Sublayer, the material of first sublayer use the gallium nitride of doped silicon, and the material of second sublayer uses the nitridation of doped carbon Gallium, the thickness of first sublayer are greater than 1/2 that the electronics provides the thickness of layer.
Optionally, the forming process of second sublayer includes:
Grow undoped gallium nitride layer；
Using ion implantation technique in the gallium nitride layer doped carbon, formed the second sublayer.
Preferably, the dosage of ion implanting is 1018/cm2~1020/cm2, the energy of ion implanting be 50keV~ 150keV。
Further, the preparation method further include:
Second sublayer is made annealing treatment.
Preferably, the temperature of annealing is 800 DEG C~950 DEG C.
Technical solution provided in an embodiment of the present invention has the benefit that
By being inserted into the gallium nitride layer of at least one doped carbon, the gallium nitride layer of doped silicon in the gallium nitride layer of doped silicon Thickness be greater than electronics provide layer thickness 1/2, therefore electronics provide layer the electronics of recombination luminescence can be provided for active layer. The electric conductivity of the gallium nitride layer of doped carbon is weaker simultaneously, promotes the electronics in the gallium nitride layer of doped silicon extending transversely, thus real The plane of existing electronics is sprawled, and is reduced electronics and is provided the series resistance of layer, enhances the antistatic effect of bottom.And the nitrogen of doped carbon The antistatic effect for changing gallium layer is stronger, therefore the antistatic effect of electronics offer layer entirety is increased dramatically, the forward direction of chip Voltage is reduced.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is that electronics provided in an embodiment of the present invention provides the structural schematic diagram of layer；
Fig. 3 is a kind of process of the preparation method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slices.Fig. 1 provides for the embodiment of the present invention A kind of gallium nitride based LED epitaxial slice structural schematic diagram.Referring to Fig. 1, the gallium nitride based LED epitaxial slice Layer 20, active layer 30 and hole being provided including substrate 10, electronics, layer 40 being provided, electronics provides layer 20, active layer 30 and hole and mentions It is sequentially laminated on substrate 10 for layer 40.
Fig. 2 provides the structural schematic diagram of layer for electronics provided in an embodiment of the present invention.Referring to fig. 2, in the present embodiment, electric It includes the first sublayer 21 and second sublayer 22 that at least one of is inserted in the first sublayer 21 that son, which provides layer 20,.First sublayer 21 Material use the gallium nitride of doped silicon, the material of the second sublayer 22 uses the gallium nitride of doped carbon.The thickness of first sublayer 21 Greater than the 1/2 of the thickness that electronics provides layer 20.
The embodiment of the present invention in the gallium nitride layer of doped silicon by being inserted into the gallium nitride layer of at least one doped carbon, doping The thickness of the gallium nitride layer of silicon is greater than 1/2 that electronics provides the thickness of layer, therefore electronics provides layer and can provide for active layer again Close luminous electronics.The electric conductivity of the gallium nitride layer of doped carbon is weaker simultaneously, promotes the electronics in the gallium nitride layer of doped silicon horizontal To extension, to realize that the plane of electronics is sprawled, reduces electronics and the series resistance of layer is provided, enhance the antistatic effect of bottom. And the antistatic effect of the gallium nitride layer of doped carbon is stronger, therefore the antistatic effect of electronics offer layer entirety is substantially mentioned It rises, the forward voltage of chip is reduced.In addition, lattice is more between the gallium nitride layer of doped carbon and the gallium nitride layer of doped silicon Matching, will not cause adverse effect to the crystal quality of epitaxial wafer entirety.
Optionally, the thickness of the second sublayer 22 can be 2nm~50nm, preferably 26nm.
If the thickness of the second sublayer is less than 2nm, may can not promote in the first sublayer since the second sublayer is relatively thin Electronics it is extending transversely, cause electronics provide layer antistatic effect can not effectively be promoted；If the thickness of the second sublayer is greater than 50nm may then be influenced in electron injection active layer since the second sublayer is thicker, the final luminous efficiency for reducing LED.
Preferably, the quantity of the second sublayer 22 can be 3~50, preferably 27.
If the quantity of the second sublayer less than 3, can not may effectively be promoted since the quantity of the second sublayer is very little The antistatic effect of electronics offer layer；If the quantity of the second sublayer be greater than 50, may due to the second sublayer quantity too It causes technique excessively complicated more, increases production cost.
Further, it can be 1 μm~5 μm, preferably 3 μm that electronics, which provides the thickness of layer 20,.
If electronics provides the thickness of layer less than 1 μm, the forward direction electricity of LED may be led to since electronics offer layer is relatively thin It presses higher；If the thickness that electronics provides layer is greater than 5 μm, the waste of material may be caused since electronics offer layer is thicker.
Optionally, the doping concentration of carbon can be dense greater than the doping of element silicon in the first sublayer 21 in the second sublayer 22 Degree.The doping concentration of carbon is higher in second sublayer, can to avoid the second sublayer electric conductivity it is too weak and influence electronics note Enter in active layer.
Preferably, the doping concentration of carbon can be 10 in the second sublayer 2218cm-3~1020cm-3, preferably 1019cm-3。
If the doping concentration of carbon is less than 10 in the second sublayer18cm-3, then may be due to carbon in the second sublayer Doping concentration it is lower and the electronics in the first sublayer can not be promoted extending transversely, cause electronics provide the antistatic effect of layer without Method is effectively promoted；If the doping concentration of carbon is greater than 10 in the second sublayer20cm-3, then may be due to carbon member in the second sublayer The doping concentration of element is higher and influences the Lattice Matching between the first sublayer and the second sublayer, reduces the crystal matter of epitaxial wafer entirety Amount.
Further, the doping concentration of element silicon can be 10 in the first sublayer 2118cm-3~1019cm-3, preferably 5* 1018cm-3。
If the doping concentration of element silicon is less than 10 in the first sublayer18cm-3, then may be due to element silicon in the first sublayer Doping concentration it is lower and to cause electronics to provide the electron amount that layer provides less, and then influence electronics and provide layer to active layer Middle injection electronics；If the doping concentration of element silicon is greater than 10 in the first sublayer19cm-3, then may be due to silicon member in the first sublayer The doping concentration of element is higher and influences the crystal quality of epitaxial wafer entirety, the final luminous efficiency for reducing LED.
Specifically, the material of substrate 10 can use sapphire (main material is aluminum oxide), as crystal orientation is [0001] sapphire.Active layer 30 may include that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum are built Alternately laminated setting；The material of Quantum Well can use InGaN (InGaN), such as InxGa1-xN, 0 < x < 1, what quantum was built Material can use gallium nitride.The material that hole provides layer 40 can be using the gallium nitride of p-type doping (such as magnesium).
Further, the thickness of Quantum Well can be 2.5nm~3.5nm, preferably 3nm；Quantum build thickness can be 9nm~20nm, preferably 15nm；The quantity of Quantum Well is identical as the quantity that quantum is built, and the quantity that quantum is built can be 5~15 It is a, preferably 10.The thickness that hole provides layer 40 can be 100nm~800nm, preferably 450nm；Hole is provided in layer 40 The doping concentration of P-type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include buffer layer 51, buffer layer 51 settings provide between layer 20 in substrate 10 and electronics, to alleviate the stress that lattice mismatch generates between substrate material and gallium nitride And defect, and nuclearing centre is provided for gallium nitride material epitaxial growth.
Specifically, the material of buffer layer 51 can use gallium nitride.
Further, the thickness of buffer layer 51 can be 15nm~35nm, preferably 25nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride layer 52, the setting of undoped gallium nitride layer 52 provides between layer 20 in buffer layer 51 and electronics, further to alleviate substrate material and nitrogen Change the stress and defect that lattice mismatch generates between gallium, provides crystal quality preferable growing surface for epitaxial wafer main structure.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy first in patterned substrate, because This is also referred to as low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again, will form multiple mutually independent three Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment Layer is referred to as undoped gallium nitride layer.
Further, the thickness of undoped gallium nitride layer 52 can be 1 μm~5 μm, preferably 3 μm.
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 60, answers The setting of power releasing layer 60 provides between layer 20 and active layer 30 in electronics, to generate to lattice mismatch between sapphire and gallium nitride Stress discharged, improve the crystal quality of active layer, be conducive to electrons and holes active layer carry out radiation recombination shine, The internal quantum efficiency of LED is improved, and then improves the luminous efficiency of LED.
Specifically, the material of stress release layer 60 can use gallium indium aluminum nitrogen (AlInGaN), can be released effectively sapphire The stress generated with gallium nitride crystal lattice mismatch, improves the crystal quality of epitaxial wafer, improves the luminous efficiency of LED.
Preferably, the molar content of aluminium component can be less than or equal to 0.2, in stress release layer 60 in stress release layer 60 The molar content of indium component can be less than or equal to 0.05, to avoid adverse effect is caused.
Further, the thickness of stress release layer 60 can be 50nm~500nm, preferably 300nm.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 71, electricity The setting of sub- barrier layer 71 provides between layer 40 in active layer 30 and hole, to avoid electron transition to hole provide in layer with hole Non-radiative recombination is carried out, the luminous efficiency of LED is reduced.
Specifically, the material of electronic barrier layer 71 can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN, 0.1 < y < 0.5.
Further, the thickness of electronic barrier layer 71 can be 50nm~150nm, preferably 100nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 72, low temperature P-type layer 72 is arranged between active layer 30 and electronic barrier layer 71, has caused to avoid the higher growth temperature of electronic barrier layer Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 72 can be identical for the material that provides layer 40 with hole.In the present embodiment, The material of low temperature P-type layer 72 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 72 can be 10nm~50nm, preferably 30nm；P in low temperature P-type layer 72 The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include p-type contact layer 80, p-type The setting of contact layer 80 provides on layer 40 in hole, between the electrode or transparent conductive film that are formed in chip fabrication technique Form Ohmic contact.
Specifically, the material of p-type contact layer 80 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 80 can be 5nm~100nm, preferably 50nm；P in p-type contact layer 80 The doping concentration of type dopant can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer layer 20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate 10 On.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including the first sublayer 21 and is inserted in the first sublayer 21 In 3 the second sublayers 22, the material of the first sublayer 21 uses the gallium nitride of doped silicon, and with a thickness of 3 μm, the doping of element silicon is dense Degree is 5*1018cm-3, the material of the second sublayer 22 uses the gallium nitride of doped carbon, with a thickness of 50nm, the doping concentration of carbon It is 1019cm-3；Active layer 30 includes that alternately stacked 10 Quantum Well and 10 quantum are built, and the material of Quantum Well uses indium nitride Gallium, Quantum Well with a thickness of 3nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer 40 Material uses the gallium nitride of p-type doping, and with a thickness of 450nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 3 μm, doped with concentration19cm-3 Silicon gallium nitride layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, chip voltage reduces 2%~ 4%.
Another specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer Layer 20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate On 10.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including the first sublayer 21 and is inserted in the first sublayer 25 the second sublayers 22 in 21, the material of the first sublayer 21 use the gallium nitride of doped silicon, and with a thickness of 3 μm, element silicon is mixed Miscellaneous concentration is 5*1018cm-3, the material of the second sublayer 22 uses the gallium nitride of doped carbon, with a thickness of 25nm, the doping of carbon Concentration is 1019cm-3；Active layer 30 includes that alternately stacked 10 Quantum Well and 10 quantum are built, and the material of Quantum Well uses nitrogen Change indium gallium, Quantum Well with a thickness of 3nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer 40 material uses the gallium nitride of p-type doping, and with a thickness of 450nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 3 μm, doped with concentration19cm-3 Silicon gallium nitride layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, chip voltage reduces 4%~ 6%.
Another specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer Layer 20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate On 10.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including the first sublayer 21 and is inserted in the first sublayer 50 the second sublayers 22 in 21, the material of the first sublayer 21 use the gallium nitride of doped silicon, and with a thickness of 3 μm, element silicon is mixed Miscellaneous concentration is 5*1018cm-3, the material of the second sublayer 22 uses the gallium nitride of doped carbon, with a thickness of 10nm, the doping of carbon Concentration is 1019cm-3；Active layer 30 includes that alternately stacked 10 Quantum Well and 10 quantum are built, and the material of Quantum Well uses nitrogen Change indium gallium, Quantum Well with a thickness of 3nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer 40 material uses the gallium nitride of p-type doping, and with a thickness of 450nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 3 μm, doped with concentration19cm-3 Silicon gallium nitride layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, chip voltage reduces 6%~ 8%.
The embodiment of the invention provides a kind of preparation methods of gallium nitride based LED epitaxial slice, are suitable for preparation figure LED epitaxial slice shown in 1.Fig. 3 is a kind of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention The flow chart of preparation method.Referring to Fig. 3, which includes:
Step 201: a substrate is provided.
Specifically, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 1 minute~ It makes annealing treatment within 10 minutes (preferably 5 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer Long quality.
Step 202: sequentially forming electronics on substrate and layer, active layer and hole offer layer are provided.
In the present embodiment, electronics provides layer and includes the first sublayer and at least one of be inserted in the first sublayer second Sublayer.The material of first sublayer uses the gallium nitride of doped silicon, and the material of the second sublayer uses the gallium nitride of doped carbon, the first son The thickness of layer is greater than 1/2 that electronics provides the thickness of layer.
Optionally, the forming process of the second sublayer may include:
Grow undoped gallium nitride layer；
Using ion implantation technique in gallium nitride layer doped carbon, formed the second sublayer.
The injection of carbon is realized using ion implanting, forms the second sublayer.
Wherein, ion implanting is the ion for becoming electrically charged the atom of certain element through ionization, and ion adds in strong electrical field Speed after obtaining higher kinetic energy, injects material surface, to change material surface physically or chemically.
In specific implementation, ion implant systems include ion source (English: Ion Source), magnetic analyzer (English: Magnetic analyzer), accelerating tube (English: Accelerator), focus and scanning system (English: Focus and Scan system) and target chamber (English: Target Assembly).
Wherein, the free electron that ion source issues filament obtains shock point after enough energy under electromagnetic field effect Son or atom, make them be ionized into ion, then be sucked out through extraction electrode, are polymerized to ion beam, directive magnetic analyzer by prefocus system.
Magnetic analyzer, by ion isolation, is selected required using the difference of the ion of different nucleocytoplasmic ratios motion profile under magnetic field Foreign ion.Selected ion beam is by variable gap, into accelerating tube.
Ion is accelerated to required energy by accelerating tube under electrostatic field.
It focuses and scanning system is after ion beam leaves accelerating tube, into control zone, first gather it by electrostatic focusing lens Coke, then carry out the scanning of x and y both direction；Subsequently into deflection system, deflected ion beam is injected on target.
In simple terms, the ion drawn from ion source selects the ion of needs, the ion after analysis by magnetic analyzer Accelerate to be injected into material surface with making even ion beam using bidimensional deflection scanner to improve the energy of ion.Use charge Integrator can accurately measure the quantity of injection ion, and the energy for adjusting injection ion can accurately control the injection depth of ion Degree.
Specifically, the dosage of ion implanting can be 1018/cm2~1020/cm2, the energy of ion implanting can be 50keV ~150keV.
Dosage by limiting ion implanting controls the implantation concentration of ion, and the energy by limiting ion implanting can essence Really control the injection depth of ion.The energy coordination of the dosage and ion implanting that inject ions into, thus in the second sublayer It is uniformly injected into the carbon of required concentration.
Preferably, which can also include:
Second sublayer is made annealing treatment.
With target atom a series of collisions can occur for energetic ion after injecting target, target atom may be made to be subjected to displacement, are displaced by Atom is also possible to an energy and is successively given to other atoms, as a result generates a series of vacancy-interstitial atom pair and other types are brilliant The unordered distribution of lattice generates lattice damage.By annealing, the damage as caused by ion implanting can be removed, makes crystal extensive Its multiple original structure.
Specifically, the temperature of annealing can be 800 DEG C~950 DEG C, to reach preferable injury recovery effect.
Optionally, the growth temperature of the first sublayer can be 1000 DEG C~1200 DEG C, preferably 1100 DEG C；First sublayer Growth pressure can be 100torr~500torr, preferably 300torr, to obtain the first less sublayer of crystal quality.
Specifically, which may include:
The first step grows electronics on substrate and provides layer；
Second step provides in electronics and grows active layer on layer；Wherein, the growth temperature of Quantum Well is 720 DEG C~829 DEG C (preferably 760 DEG C), pressure are 100torr~500torr (preferably 300torr)；Quantum build growth temperature be 850 DEG C~ 959 DEG C (preferably 900 DEG C), pressure is 100torr~500torr (preferably 300torr)；
Third step, controlled at 850 DEG C~1080 DEG C (preferably 960 DEG C), pressure is that 100torr~300torr is (excellent It is selected as 200torr), hole is grown on active layer, and layer is provided.
Optionally, before the first step, which can also include:
Grown buffer layer on substrate.
Correspondingly, electronics provides layer growth on the buffer layer.
Specifically, grown buffer layer on substrate may include:
Controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure be 400torr~600torr (preferably 500torr), grown buffer layer on substrate；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably 500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Preferably, on substrate after grown buffer layer, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, electronics provides layer and is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably 300torr), undoped gallium nitride layer is grown on the buffer layer.
Optionally, before second step, which can also include:
Growth stress releasing layer on layer is provided in electronics.
Correspondingly, active layer is grown on stress release layer.
Specifically, growth stress releasing layer on layer is provided in electronics, may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably 300torr), growth stress releasing layer on layer is provided in electronics.
Optionally, before third step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, hole provides layer and is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 850 DEG C~1080 DEG C (preferably 950 DEG C), pressure be 200torr~500torr (preferably 350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably 300torr), the growing low temperature P-type layer on active layer.
Optionally, after third step, which can also include:
Growing P-type contact layer on layer is provided in hole.
Specifically, growing P-type contact layer on layer is provided in hole, may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably 200torr), growing P-type contact layer on layer is provided in hole.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium Source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, electronics Layer, active layer and hole are provided, layer is provided, the electronics provides layer, the active layer and hole offer layer and is sequentially laminated on On the substrate, which is characterized in that the electronics provides layer and includes the first sublayer and be inserted in first sublayer extremely Few second sublayer, the material of first sublayer use the gallium nitride of doped silicon, and the material of second sublayer, which uses, to be mixed The gallium nitride of miscellaneous carbon, the thickness of first sublayer are greater than 1/2 that the electronics provides the thickness of layer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the thickness of second sublayer Degree is 2nm~50nm.
3. gallium nitride based LED epitaxial slice according to claim 2, which is characterized in that the number of second sublayer Amount is 3~50.
4. described in any item gallium nitride based LED epitaxial slices according to claim 1~3, which is characterized in that described The doping concentration of carbon is greater than the doping concentration of element silicon in first sublayer in two sublayers.
5. gallium nitride based LED epitaxial slice according to claim 4, which is characterized in that carbon in second sublayer The doping concentration of element is 1018cm-3~1020cm-3。
6. a kind of preparation method of gallium nitride based LED epitaxial slice, which is characterized in that the preparation method includes:
One substrate is provided；
Electronics is sequentially formed over the substrate, and layer, active layer and hole offer layer are provided；
Wherein, it includes the first sublayer and second son that at least one of is inserted in first sublayer that the electronics, which provides layer, Layer, the material of first sublayer use the gallium nitride of doped silicon, and the material of second sublayer uses the gallium nitride of doped carbon, The thickness of first sublayer is greater than 1/2 that the electronics provides the thickness of layer.
7. preparation method according to claim 6, which is characterized in that the forming process of second sublayer includes:
Grow undoped gallium nitride layer；
Using ion implantation technique in the gallium nitride layer doped carbon, formed the second sublayer.
8. preparation method according to claim 7, which is characterized in that the dosage of ion implanting is 1018/cm2~1020/ cm2, the energy of ion implanting is 50keV~150keV.
9. preparation method according to claim 7 or 8, which is characterized in that the preparation method further include:
Second sublayer is made annealing treatment.
10. preparation method according to claim 9, which is characterized in that the temperature of annealing is 800 DEG C~950 DEG C.
CN201811014548.6A 2018-08-31 2018-08-31 A kind of gallium nitride based LED epitaxial slice and preparation method thereof Pending CN109346566A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1925180A (en) * 2005-08-30 2007-03-07 日立电线株式会社 Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device
KR100738399B1 (en) * 2006-04-18 2007-07-12 삼성전기주식회사 Nitride semiconductor light emitting device
CN103748698A (en) * 2011-08-08 2014-04-23 日进Led有限公司 Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1925180A (en) * 2005-08-30 2007-03-07 日立电线株式会社 Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device
KR100738399B1 (en) * 2006-04-18 2007-07-12 삼성전기주식회사 Nitride semiconductor light emitting device
CN103748698A (en) * 2011-08-08 2014-04-23 日进Led有限公司 Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same

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Application publication date: 20190215