CN1925180A - Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device - Google Patents
Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device Download PDFInfo
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- CN1925180A CN1925180A CNA2006101159699A CN200610115969A CN1925180A CN 1925180 A CN1925180 A CN 1925180A CN A2006101159699 A CNA2006101159699 A CN A2006101159699A CN 200610115969 A CN200610115969 A CN 200610115969A CN 1925180 A CN1925180 A CN 1925180A
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Abstract
Provided are an epitaxial wafer for a semiconductor light emitting device which suppresses the diffusion of p-type dopant to p-type cladding layer and activity layer, a method for fabricating the same and a semiconductor light emitting device using the same which executes a high power output and high temperature operation with high reliability. The epitaxial wafer for a semiconductor light emitting device is provided with a structure which is formed by overlapping: a n-type GaAs buffer layer 2, a n-type GaInP buffer layer 3, a n-type AlGaInP cladding layer 4, an undoped AlGaAs guide layer 5, an AlGaAs/GaAs multiquantum well (MQW) active layer 6, a first p-type AlGaInP cladding layer 7, a p-type GaInP etching stopper layer 8, a second p-type AlGaInP cladding layer 9, a C-doped AlGaAs layer (Zn-diffusion suppressing layer) 10, a p-type GaInP intermediate layer 11, and a p-type GaAs cap layer 12 sequentially on a n-type GaAs substrate 1.
Description
Technical field
The present invention relates to semiconductor light-emitting elements epitaxial wafer and manufacture method and semiconductor light-emitting elements, particularly relate to comprise adopt zinc (Zn) or magnesium (Mg) as the semiconductor light-emitting elements (light-emitting diode, semiconductor laser) of AlGaInP (AlGaInP) based material of p type dopant with epitaxial wafer and manufacture method thereof, and the semiconductor light-emitting elements that uses this epitaxial wafer to make.
Background technology
In recent years, very active for adopting the AlGaInP series visible-light semiconductor laser in the semiconductor laser as the exploitation of the high-density optical disk apparatus of light source.The Fabry-Perot type laser diode (LD) that is used to this light source has layer structure as described below, promptly, on n type GaAs substrate, at least stack gradually each layer as described below: n type AlGaInP coating layer, as required, n type GaAs resilient coating can be arranged between the two, n type GaInP resilient coating can also be arranged in case of necessity; Active layer; P type AlGaInP coating layer; P type GaAs covers (キ ヤ Star プ) layer, can have as required p type GaInP intermediate layer between between.In addition, as required, in technology,, use the epitaxial wafer that inserts the structure of GaInP layer in the part of p type AlGaInP coating layer mostly, adopt organic metal vapor growth method (MOVPE method) to make for etching control and refractive index design.
Write as reading in the high-density optical disk apparatus and to use light source, therefore high-power output and the high-temperature working performance that aspire for stability need make the carrier concentration high concentrationization of p type coating layer.Zn or Mg have been considered as the p type dopant that satisfies this requirement.In patent documentation 1, put down in writing the example that Zn is used for the p type dopant of p type coating layer.
But the problem of its existence is, dopant can spread to active layer from p type coating layer, and it is measured more for a long time, can cause defective fatal for the function of semiconductor Laser device.The Zn ratio is easier to diffusion, and Mg is not easy diffusion.Therefore, tend to use the diffusion constant Mg littler to form p type coating layer recently than Zn.This is because Mg than the more difficult diffusion of Zn, therefore can add to high concentration the carrier concentration of p type coating layer.
On the other hand, consider that from the necessity of the contact resistance that reduces electrode as far as possible the carrier concentration of p type cover layer (contact layer) also needs to form quite high carrier concentration.This p type cover layer is formed by GaAs (GaAs) usually, and in addition, from need be than coating the floor height one digit number or above carrier concentration is considered, the Zn that employing can high concentration be added be as dopant (for example with reference to patent documentation 1).
In addition, the somebody has proposed a kind of scheme,, makes between p type coating layer and the active layer that to exist with the GaAs based compound semiconductor be principal component and to contain concentration be 5 * 10 that is
18/ cm
3～1 * 10
20/ cm
3The diffusion of carbon (C) suppress layer (for example with reference to a patent documentation 2).The C that diffusion suppresses in the layer becomes the barrier layer, suppresses to be entrained in the diffusion of Zn, Mg etc. in p type coating layer and the active layer effectively.
[patent documentation 1] spy opens flat 11-186665 communique
[patent documentation 2] spy opens the 2002-261321 communique
Summary of the invention
As putting down in writing in patent documentation 1 and 2, in the past, should be noted that the Zn that prevents in the p type coating layer entered the unfavorable condition in the active layer.For example, put down in writing in the patent documentation 2, the diffusion that accompanies carbon containing (C) between p type coating layer and active layer suppresses layer, and it is the Zn that is used to absorb from the diffusion of p type coating layer that this diffusion suppresses layer, reduces the layer of the Zn amount that is diffused in the active layer.
But, as described below, should prevent that also the Zn in the p type cover layer from entering in p type coating layer and the active layer.
Specifically, if add the Zn of high concentration in p type cover layer, Zn can be constantly to following layer diffusion in its epitaxial growth.Below p type coating layer be the occasion of doping of Zn, can extrude p type coating layer Zn and to active layer diffusion (extruding diffusion).On the other hand, p type coating layer is the occasion of doped with Mg, because the phase counterdiffusion, the tectal Zn of p type diffuses in the active layer always.Any situation no matter all can exist the half range value (hereinafter referred to as PL half range value) of the photoluminescence spectra of active layer to increase or unfavorable condition such as luminous intensity reduction.That is,, the crystalline quality of the diffusion of Zn infringement active layer causes threshold current or operating current increases and reliability reduces reason owing to becoming.
Thereby, the objective of the invention is, solve above-mentioned problem, provide suppress p type dopant to the semiconductor light-emitting elements of p type coating layer and active layer diffusion with epitaxial wafer and manufacture method thereof, and the semiconductor light-emitting elements that uses this epitaxial wafer, can carry out stable high-power output running and high temperature running and have high reliability.
It is to achieve these goals, of the present invention that to be constructed as follows face described.
Promptly, semiconductor light-emitting elements epitaxial wafer of the present invention, it is characterized in that, on n type substrate, at least stack gradually n type coating layer, active layer, p type coating layer and p type cover layer, the tectal p type of p type dopant is Zn, inserts the p type AlGaAs layer of the carbon that mixed between described p type coating layer and p type cover layer.
In addition, semiconductor light-emitting elements epitaxial wafer of the present invention, it is characterized in that, on the n type substrate that constitutes by GaAs, the lamination n type coating layer that constitutes by AlGaInP of one deck, active layer, the p type coating layer that constitutes by AlGaInP of one deck and the p type cover layer that constitutes by GaAs at least at least successively, the tectal p type of p type dopant is Zn, between described p type coating layer and p type cover layer, insert the p type AlGaAs layer of the carbon that mixed, and the band gap wavelength of this p type AlGaAs layer is longer than the band gap wavelength of p type coating layer.
In addition, semiconductor light-emitting elements epitaxial wafer of the present invention, it is characterized in that, on n type substrate, at least stack gradually n type coating layer, active layer, p type coating layer, p type intermediate layer and p type cover layer, the tectal p type of p type dopant is Zn, inserts the p type AlGaAs layer of the carbon that mixed between described p type coating layer and p type intermediate layer.
In addition, semiconductor light-emitting elements epitaxial wafer of the present invention, it is characterized in that, on the n type substrate that constitutes by GaAs, stack gradually the n type coating layer that one deck at least is made of AlGaInP, active layer, at least the p type coating layer that constitutes by AlGaInP of one deck, at least the p type intermediate layer that constitutes by GaInP or AlGaInP of one deck and the p type cover layer that constitutes by GaAs, the tectal p type of p type dopant is Zn, between described p type coating layer and p type intermediate layer, insert the p type AlGaAs layer of the carbon that mixed, and, the band gap wavelength of this p type AlGaAs layer is longer than the band gap wavelength of p type coating layer, than the weak point in p type intermediate layer.
The p type dopant of above-mentioned p type coating layer can be Zn or Mg.
In addition, semiconductor light-emitting elements epitaxial wafer of the present invention, it is characterized in that, on n type substrate, at least stack gradually n type coating layer, active layer, p type the 1st coating layer, p type etching stopping layer, p type the 2nd coating layer, p type intermediate layer and p type cover layer, the tectal p type of p type dopant is Zn, inserts the p type AlGaAs layer of the carbon that mixed between described p type the 2nd coating layer and p type intermediate layer.
In addition, semiconductor light-emitting elements epitaxial wafer of the present invention, it is characterized in that, on the n type substrate that constitutes by GaAs, at least p type the 1st coating layer that stacks gradually the n type coating layer that constitutes by AlGaInP, active layer, constitutes by AlGaInP, p type etching stopping layer, p type the 2nd coating layer that constitutes by AlGaInP, the p type intermediate layer that constitutes by GaInP and the p type cover layer that constitutes by GaAs, the tectal p type of p type dopant is Zn, inserts the p type AlGaAs layer of the carbon that mixed between described p type the 2nd coating layer and p type intermediate layer.
Above-mentioned p type etching stopping layer can be at least one deck by GaInP or AlGaInP constitute the layer.
The p type dopant of above-mentioned p type the 2nd coating layer can be Zn or Mg.
In addition, the semiconductor light-emitting elements of the present invention manufacture method of epitaxial wafer, it is characterized in that the carbon of the p type AlGaAs layer of the described carbon that mixed mixes, is to be undertaken by the autodoping of organic metal raw material by the ratio of adjusting III family raw material and the V/III of V family raw material.
In addition, semiconductor light-emitting elements of the present invention is characterized in that with the manufacture method of epitaxial wafer the carbon of the p type AlGaAs layer of the described carbon that mixed mixes, and is to be undertaken by the autodoping of organic metal raw material by adjusting growth temperature.
And then, also can use above-mentioned semiconductor light-emitting elements to make semiconductor light-emitting elements with epitaxial wafer.
The inventor finds: when (1) had inserted the AlGaAs layer between p type cover layer and p type coating layer, the Zn in the p type cover layer was not diffused in the p type coating layer fully; (2) no matter the p type dopant of p type coating layer is Zn or Mg, and the effect that prevents the Zn diffusion of this AlGaAs layer can be brought into play effectively.
The present invention is based on the inventor's above-mentioned cognition and finishes, semiconductor light-emitting elements of the present invention with the structure of epitaxial wafer is, on n type substrate, at least stack gradually n type coating layer, active layer, p type coating layer, p type cover layer (contact layer), the tectal p type of the p type dopant of the superiors is Zn, and, between p type coating layer and p type cover layer, inserted the AlGaAs layer.
In addition, semiconductor light-emitting elements of the present invention with the structure of epitaxial wafer is, on n type substrate, at least stack gradually n type coating layer, active layer, p type coating layer, p type intermediate layer and p type cover layer (contact layer), the tectal p type of the p type dopant of the superiors is Zn, and, between p type coating layer and p type intermediate layer, inserted the AlGaAs layer.
When forming such structure, because this AlGaAs layer has suppressed to be entrained in the Zn diffusion in the p type cover layer, the zinc that plays diffusion suppresses the effect of layer, and therefore, Zn basically can be from this AlGaAs course p type coating layer one side and the diffusion of active layer one side.As a result, can solve the problem that the characteristics of luminescence of active layer and component life deterioration etc. existed in the past.
Above-mentionedly prevent that the effect of spreading from being owing to the layer that inserts is that the AlGaAs layer produces, iff being in order to have produced this effect, there is no need must be carbon doped p type.But, in fact when the making light-emitting component is used epitaxial wafer, do not become the resistance components of element in order to make this AlGaAs layer, need form low impedance layers fully.For this reason, requiring in the present invention is the p type AlGaAs layer of the little carbon of diffusion coefficient of having mixed.
In addition, because therefore the Zn diffusion that can prevent to mix in p type cover layer by this structure can keep to high concentration the Zn in the p type cover layer, the low resistanceization of the contact resistance of realization cover layer and electrode, the result can reduce the forward operating voltage of element.
Like this, for the Zn diffusion that prevents from cover layer, to mix, between p type coating layer and p type intermediate layer (or interface), perhaps (or interface) inserts the AlGaAs layer between p type coating layer and p type cover layer, and, for this AlGaAs layer does not play resistive layer, the p type layer that forms the carbon that mixed is eliminated the increase of the forward operating voltage of semiconductor light-emitting elements, and such idea is unexistent in the past.
No matter which among Zn and the Mg p type dopant of p type coating layer be, the Zn diffusion that prevents of above-mentioned AlGaAs layer can effectively be brought into play.Thereby, the scope of application of the present invention is very wide, even on the substrate that constitutes by GaAs, make and mainly use Zn or Mg to use in the epitaxial wafer as the semiconductor light-emitting elements of p type dopant by the compound semiconductor of epitaxial growth AlGaInP based material, as long as the form of carbon doped p type AlGaAs layer has been inserted in employing between this p type coating layer and p type intermediate layer (or interface), just can obtain the effect of the inhibition Zn diffusion of the present invention's expectation.
According to the present invention, formed between p type coating layer and p type cover layer or p type intermediate layer (or interface) and inserted the structure of the p type AlGaAs layer of the carbon that mixed, this AlGaAs layer performance suppresses the effect of the zinc diffusion inhibition layer of the Zn diffusion in the cover layer, therefore, basically can be as the Zn of the tectal p type of p type dopant from this AlGaAs course p type coating layer one side or the diffusion of active layer one side.That is to say that the tectal Zn of p type that can suppress high-concentration dopant extremely effectively spreads in p type coating layer, particularly active layer, so the characteristics of luminescence of active layer and component life can deteriorations.As a result, can be provided in the semiconductor light-emitting elements epitaxial wafer that can be doped into the enough low carrier concentration of contact resistance in the cover layer, be suitable for making the high light-emitting components such as red laser diode of high-power output and hot properties excellence and reliability.
By the way, with dopant from p type coating layer to active layer diffusion and Zn when the diffusion of p type cover layer to active layer compares, because the tectal Zn concentration of p type height, what in fact the influence that element characteristic is produced was big is from the tectal Zn diffusion of p type.Therefore, the present invention can also make high-power output and hot properties excellence and the high light-emitting components such as red laser diode of reliability effectively except can suppress dopant from p type coating layer spreads to active layer.
Description of drawings
Fig. 1 is the schematic cross-section of the semiconductor light-emitting elements that relates to of expression the 1st execution mode with epitaxial wafer.
Fig. 2 is the schematic cross-section of the semiconductor light-emitting elements that relates to of expression the 2nd execution mode with epitaxial wafer.
Fig. 3 will have that semiconductor light-emitting elements that zinc diffusion prevents that the embodiment 1 of layer from relating to compares with the sims analysis result of epitaxial wafer with epitaxial wafer and semiconductor light-emitting elements in the past and the figure that represents.
Fig. 4 is that expression has the figure that the zinc diffusion prevents the sims analysis result of the semiconductor light-emitting elements usefulness epitaxial wafer that the embodiment 2 of layer relates to.
Symbol description
1 n type substrate
2 n type resilient coatings (Si doping)
3 n type resilient coatings (Si doping)
4 n type coating layers (Si doping)
5 non-doping guide layers
6 active layers
7 p types the 1st coating layer (Zn doping)
8 p type etching stopping layers (Zn doping)
9 p types the 2nd coating layer (Zn doping)
10 carbon doped with Al GaAs layers (the zinc diffusion suppresses layer)
11 p type intermediate layers (Zn doping)
12 p type cover layers (Zn doping)
13 n type substrates
14 n type resilient coatings (Si doping)
15 n type resilient coatings (Si doping)
16 n type coating layers (Si doping)
17 non-doping guide layers
18 active layers
19 p types the 1st coating layer (Mg doping)
20 p type etching stopping layers (Mg doping)
21 p types the 2nd coating layer (Mg doping)
22 carbon doped with Al GaAs layers (the zinc diffusion suppresses layer)
23 p type intermediate layers (Mg doping)
24 p type cover layers (Zn doping)
Embodiment
Below based on illustrated execution mode explanation the present invention.
The 1st execution mode
Semiconductor light-emitting elements shown in Fig. 1 (LD) is used epitaxial wafer, has formed the structure that stacks gradually following each layer on the n type substrate 1 that is made of GaAs: the n type resilient coating 2 that is made of GaAs, the n type resilient coating 3 that constitutes by GaInP, the n type coating layer 4 that constitutes by AlGaInP, the non-doping guide layer 5 that constitutes by AlGaAs, the active layer 6 that constitutes by the multiple quantum trap (MQW) of AlGaAs/GaAs, p type the 1st coating layer 7 that constitutes by AlGaInP, the p type etching stopping layer 8 that constitutes by GaInP, p type the 2nd coating layer 9 that constitutes by AlGaInP, become characteristic of the present invention doping the carbon doped with Al GaAs layer 10 of carbon (zinc diffusion suppress layer), p type intermediate layer 11 that constitutes by GaInP and the p type cover layer 12 that constitutes by GaAs.Doped p type dopant is Zn in p type the 1st coating layer 7, p type the 2nd coating layer 9, p type etching stopping layer 8 and p type intermediate layer 11.
As mentioned above, Zn doped p type intermediate layer 11 being set is the resistance components that is used to reduce the interface that produces owing to band gap is discontinuous between Zn doped p type the 2nd coating layer 9 and Zn doped p type GaAs cover layer 12.
The aluminium of carbon doped with Al GaAs layer 10 (zinc diffusion prevent layer) of p type of carbon of having mixed is formed, and its band gap wavelength is longer than the band gap wavelength of p type the 2nd coating layer 9, lacks than the band gap wavelength in p type intermediate layer 11.This also is in order to reduce the resistance components at the interface that produces owing to band gap is discontinuous between p type the 2nd coating layer 9, carbon doped with Al GaAs layer 10, p type intermediate layer 11.
When formation as above-mentioned structure shown in Figure 1, carbon doped with Al GaAs layer 10 plays the effect of the zinc diffusion inhibition layer of the Zn diffusion that suppresses to be entrained in the p type cover layer 12, and therefore, Zn basically can be from this AlGaAs course active layer one side diffusion.No matter which among Zn and the Mg p type dopant of p type coating layer be, this carbon doped with Al GaAs layer can be brought into play Zn diffusion inhibitory action effectively.In addition, because the carbon that mixed can not produce the resistance of the forward operating voltage increase that makes semiconductor light-emitting elements.
Doping carbon in the above-mentioned AlGaAs layer that is inserted between p type coating layer and the p type between the layer is not to adopt the method for deliberately adding impurity, but adopts the ratio by regulating III family raw material and the V/III of V family raw material to carry out autodoping.That is,, can set by recently the controlling of V/III of regulating III family's raw material and V family raw material with respect to the carbon doping of carbon doped with Al GaAs layer 10.
The 2nd execution mode
On the other hand, semiconductor light-emitting elements shown in Fig. 2 (LD) is used epitaxial wafer, has formed the structure that stacks gradually following each layer on the n type substrate 13 that is made of GaAs: the n type resilient coating 14 that is made of GaAs, the n type resilient coating 15 that constitutes by GaInP, the n type coating layer 16 that constitutes by AlGaInP, the non-doping guide layer 17 that constitutes by AlGaInP, active layer 18 by multiple quantum trap (MQW) formation, p type the 1st coating layer 19 that constitutes by AlGaInP, the p type etching stopping layer 20 that constitutes by GaInP, p type the 2nd coating layer 21 that constitutes by AlGaInP, become the carbon doped with Al GaAs layer 22 of characteristic of the present invention, stacked aluminium is formed the p type intermediate layer 23 of structure of different a plurality of p type AlGaInP films and p type GaInP film and the p type cover layer 24 that is made of GaAs.Doped p type dopant is Mg in p type the 1st coating layer 19, p type the 2nd coating layer 21, p type etching stopping layer 20 and p type intermediate layer 23.
As mentioned above, Mg doped p type intermediate layer 23 being set is the resistance components that is used to reduce the interface that produces owing to band gap is discontinuous between Mg doped p type the 2nd coating layer 21 and Zn doped p type GaAs cover layer 24.
The aluminium of p type carbon doped with Al GaAs layer 22 (zinc diffusion prevent layer) of carbon of having mixed is formed, and its band gap wavelength is longer than the band gap wavelength of p type the 2nd coating layer 21, the band gap wavelength weak point of the layer shorter than band gap wavelength in the p type intermediate layer 23.This also is in order to reduce the resistance components at the interface that produces owing to band gap is discontinuous between p type the 2nd coating layer 21, carbon doped with Al GaAs layer 22, p type intermediate layer 23.
When formation as above-mentioned structure shown in Figure 2, the zinc that carbon doped with Al GaAs layer 22 plays the Zn diffusion that prevents to be doped in the p type cover layer 24 spreads the effect that prevents layer, and therefore, Zn can not spread from this AlGaAs course p type coating layer one side basically.No matter which among Zn and the Mg p type dopant of p type coating layer be, the Zn diffusion that prevents of this carbon doped with Al GaAs layer can be brought into play effectively.In addition, because the carbon that mixed can not produce the resistance of the forward operating voltage increase that makes semiconductor light-emitting elements yet.
Doping carbon in the AlGaAs layer between above-mentioned insertion p type coating layer and p type intermediate layer is not to adopt the method add impurity wittingly, but carries out autodoping by the ratio of regulating III family raw material and the V/III of V family raw material.That is to say,, can set by recently the controlling of V/III of regulating III family's raw material and V family raw material with respect to the carbon doping of carbon doped with Al GaAs layer 22.
As embodiment 1, prepare semiconductor light-emitting elements epitaxial wafer shown in Figure 1.
As shown in Figure 1, on n type GaAs substrate 1, successively the Si Doped n-type resilient coating 2 that constitutes by GaAs of epitaxial growth, with its lattice match by Ga
0.5In
0.5The Si Doped n-type resilient coating 3 that P constitutes, by (Al
0.7Ga
0.3)
0.5In
0.5The Si Doped n-type coating layer 4 that P constitutes is grown by Al in the above successively
0.34Ga
0.66The non-doping guide layer 5 that As constitutes, comprise by Al
0.34Ga
0.66The non-doping blocking layer that As constitutes and by Al
0.11Ga
0.89Multiple quantum trap (MQW) active layer 6 of the non-impure well layer that As constitutes, also have by (Al
0.7Ga
0.3)
0.5In
0.5Zn doped p type the 1st coating layer 7 that P constitutes, by Ga
0.5In
0.5The Zn doped p type etching stopping layer 8 that P constitutes, by (Al
0.7Ga
0.3)
0.5In
0.5Zn doped p type the 2nd coating layer 9 that P constitutes.
Subsequently, be grown to serve as the carbon doped with Al as zinc diffusion inhibition layer of characteristic of the present invention in the above successively
0.85Ga
0.15As layer 10, by Ga
0.5In
0.5Zn doped p type intermediate layer 11 that P constitutes and the Zn doped p type cover layer 12 that constitutes by GaAs.Wherein, carbon doped with Al
0.85Ga
0.15It is 0.85 that the aluminium of As layer 10 is formed, and thickness is 40nm, and the carrier concentration of the autodoping of the formed carbon of ratio (C) by regulating V/III is 8 * 10
17/ cm
3In addition, by Ga
0.5In
0.5The thickness in the Zn doped p type intermediate layer 11 that P constitutes is 50nm, and carrier concentration is 2 * 10
18/ cm
3The thickness of Zn doped p type cover layer 12 is 450nm, and carrier concentration is 1 * 10
19/ cm
3
For the semiconductor light-emitting elements epitaxial wafer of layer structure with present embodiment (the present invention), investigate the distribution situation of its Zn by sims analysis, the results are shown among Fig. 3.Among the figure, curve 25 is distribution curves of the Zn of structure shown in Figure 1 (embodiment 1), and curve 26 makes in order to compare, do not become the carbon doped with Al that the zinc diffusion suppresses layer except having to insert
0.85Ga
0.15The distribution curve of the Zn of the situation of As layer 10 outer identical structure.In addition, in Fig. 3,, begin active layer one is sidelong big expression from etching stopping layer in order to represent the difference of embodiment 1 and comparative example significantly.
In the occasion of comparative example (curve 26), the level of the Zn in the coating layer rises, and can also find out significantly that in addition Zn enters into active layer.On the other hand, in the occasion of embodiment 1 (curve 25), distinguish that Zn has only the level that does not produce any problem to the diffusion of active layer.
In addition, use the semiconductor light-emitting elements of present embodiment 1 also very good with the element characteristic of the infrared high-power output semiconductor laser (the infrared side of one chip dual laser) of epitaxial wafer making.
As embodiment 2, prepare semiconductor light-emitting elements epitaxial wafer shown in Figure 2.
As shown in Figure 2, on the n type substrate 13 that constitutes by GaAs, successively the Si Doped n-type resilient coating 14 that constitutes by GaAs of epitaxial growth, with the Si Doped n-type resilient coating 15 that constitutes by GaInP of its lattice match, by (Al
0.7Ga
0.3)
0.5In
0.5The Si Doped n-type coating layer 16 that P constitutes is grown by (Al in the above successively
0.5Ga
0.5)
0.5In
0.5The non-doping guide layer 17 that P constitutes, comprise non-doping (Al
0.5Ga
0.5)
0.5In
0.5Multiple quantum trap (MQW) active layer 18 of P barrier layer and strain GaInP well layer, also have by (Al
0.7Ga
0.3)
0.5In
0.5Mg doped p type the 1st coating layer 19 that P constitutes, by Ga
0.5In
0.5The Mg doped p type etching stopping layer 20 that P constitutes, by (Al
0.7Ga
0.3)
0.5In
0.5Mg doped p type the 2nd coating layer 21 that P constitutes.
What subsequently, be grown to serve as characteristic of the present invention in the above successively prevents the carbon doped with Al of layer as zinc diffusion
0.85Ga
0.15As layer 22, Mg doping Ga
0.5In
0.5P intermediate layer 23 and the Zn doped p type cover layer 24 that constitutes by GaAs.Wherein, carbon doped with Al
0.85Ga
0.15It is 0.85 that the aluminium of As layer 22 is formed, and thickness is 35nm, and the carrier concentration of the autodoping of the formed carbon of ratio by regulating V/III is 1.1 * 10
18/ cm
3Mg doping Ga
0.5In
0.5The thickness in P intermediate layer 23 is 35nm, and carrier concentration is 2.5 * 10
18/ cm
3The thickness of the Zn doped p type cover layer 24 that is made of GaAs is 200nm, and carrier concentration is 2.5 * 10
19/ cm
3
For the semiconductor light-emitting elements epitaxial wafer of layer structure with present embodiment (the present invention), investigate the distribution situation of its Zn and Mg by sims analysis, the results are shown among Fig. 4.
By this result as can be known, Zn is not diffused into active layer one side from Mg doped p type the 2nd coating layer 21 basically.
In addition, use the semiconductor light-emitting elements of present embodiment 2 also very good with the element characteristic of the infrared high-power output semiconductor laser of epitaxial wafer making.
Claims (12)
1. semiconductor light-emitting elements epitaxial wafer, on n type substrate, stack gradually n type coating layer, active layer, p type coating layer and p type cover layer at least, the tectal p type of p type dopant is Zn, it is characterized in that, between described p type coating layer and p type cover layer, inserted the p type AlGaAs layer of doping carbon.
2. semiconductor light-emitting elements epitaxial wafer, on the n type substrate that constitutes by GaAs, stack gradually n type coating layer that one deck at least is made of AlGaInP, active layer, the p type coating layer that constitutes by AlGaInP of one deck and the p type cover layer that constitutes by GaAs at least, the tectal p type of p type dopant is Zn, it is characterized in that, between described p type coating layer and p type cover layer, inserted the p type AlGaAs layer of doping carbon, and the band gap wavelength of this p type AlGaAs layer is longer than the band gap wavelength of p type coating layer.
3. semiconductor light-emitting elements epitaxial wafer, on n type substrate, stack gradually n type coating layer, active layer, p type coating layer, p type intermediate layer and p type cover layer at least, the tectal p type of p type dopant is Zn, it is characterized in that, between described p type coating layer and p type intermediate layer, inserted the p type AlGaAs layer of doping carbon.
4. semiconductor light-emitting elements epitaxial wafer, on the n type substrate that constitutes by GaAs, stack gradually the n type coating layer that one deck at least is made of AlGaInP, active layer, at least the p type coating layer that constitutes by AlGaInP of one deck, at least the p type intermediate layer that constitutes by GaInP or AlGaInP of one deck and the p type cover layer that constitutes by GaAs, the tectal p type of p type dopant is Zn, it is characterized in that, between described p type coating layer and p type intermediate layer, inserted the p type AlGaAs layer of doping carbon, and, the band gap wavelength of this p type AlGaAs layer is longer than the band gap wavelength of p type coating layer, and is shorter than the band gap wavelength in p type intermediate layer.
5. according to each described semiconductor light-emitting elements epitaxial wafer in the claim 1～4, it is characterized in that the p type dopant of described p type coating layer is Zn or Mg.
6. semiconductor light-emitting elements epitaxial wafer, on n type substrate, at least stack gradually n type coating layer, active layer, p type the 1st coating layer, p type etching stopping layer, p type the 2nd coating layer, p type intermediate layer and p type cover layer, the tectal p type of p type dopant is Zn, it is characterized in that, between described p type the 2nd coating layer and p type intermediate layer, inserted the p type AlGaAs layer of doping carbon.
7. semiconductor light-emitting elements epitaxial wafer, on the n type substrate that constitutes by GaAs, at least p type the 1st coating layer that stacks gradually the n type coating layer that constitutes by AlGaInP, active layer, constitutes by AlGaInP, p type etching stopping layer, p type the 2nd coating layer that constitutes by AlGaInP, the p type intermediate layer that constitutes by GaInP and the p type cover layer that constitutes by GaAs, the tectal p type of p type dopant is Zn, it is characterized in that, between described p type the 2nd coating layer and p type intermediate layer, inserted the p type AlGaAs layer of doping carbon.
8. according to claim 6 or 7 described semiconductor light-emitting elements epitaxial wafers, it is characterized in that described p type etching stopping layer is by one deck GaInP or AlGaInP constitute at least.
9. according to claim 6 or 7 described semiconductor light-emitting elements epitaxial wafers, it is characterized in that the p type dopant of described p type the 2nd coating layer is Zn or Mg.
In the claim 1～4,6,7 each described semiconductor light-emitting elements with the manufacture method of epitaxial wafer, it is characterized in that, the carbon of the p type AlGaAs layer of the described carbon that mixed mixes, and is to be undertaken by the autodoping of organic metal raw material by the ratio of regulating III family raw material and the V/III of V family raw material.
11. each described semiconductor light-emitting elements manufacture method of epitaxial wafer in the claim 1～4,6,7, it is characterized in that, the carbon of the p type AlGaAs layer of the described carbon that mixed mixes, and is to be undertaken by the autodoping of organic metal raw material by regulating growth temperature.
12. semiconductor light-emitting elements is characterized in that, each described semiconductor light-emitting elements is made with epitaxial wafer in the use claim 1～9.
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