CN109346401A - Improve Jin-gold thermocompression bonding intensity method in silicon face nanoforest - Google Patents
Improve Jin-gold thermocompression bonding intensity method in silicon face nanoforest Download PDFInfo
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- CN109346401A CN109346401A CN201811213308.9A CN201811213308A CN109346401A CN 109346401 A CN109346401 A CN 109346401A CN 201811213308 A CN201811213308 A CN 201811213308A CN 109346401 A CN109346401 A CN 109346401A
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000010931 gold Substances 0.000 title claims abstract description 29
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 17
- 239000010703 silicon Substances 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 109
- 229910052751 metal Inorganic materials 0.000 claims abstract description 109
- 239000010410 layer Substances 0.000 claims description 113
- 239000013047 polymeric layer Substances 0.000 claims description 41
- 229920000642 polymer Polymers 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
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Abstract
The present invention relates to a kind of Jin-gold thermocompression bonding intensity methods in raising silicon face nanoforest, it includes the following steps: step 1, provides the first wafer and prepare required nanoforest structure on first wafer, and the nanoforest structure includes several taper nanometer bodies；Step 2 prepares required aciculiform metal layer in the nanoforest structure of above-mentioned first wafer, and the aciculiform metal layer covers in nanoforest structure；Step 3 provides the second wafer and prepares required plate shape metal layer on second wafer；The plate shape metal layer alignment of second wafer is placed on the aciculiform metal layer of the first wafer by step 4, so that plate shape metal layer is contacted with aciculiform metal layer；Single step thermocompression bonding is carried out to plate shape metal layer and aciculiform metal layer, is bonded with obtaining the first wafer with the wafer scale of the second wafer.The present invention can effectively improve gold-gold bonding intensity, ensure that the stability and air-tightness of Vacuum Package device.
Description
Technical field
The present invention relates to a kind of method, Jin-gold thermocompression bonding intensity in especially a kind of raising silicon face nanoforest
Method belongs to the technical field of wafer bonding.
Background technique
Wafer scale bonding techniques have become MEMS device encapsulation and the core technology in manufacturing process, in addition to encapsulation field
Outside, wafer scale bonding techniques are also widely used in other field, such as: three-dimensional chip stacks (3-D chip
Stacking), silicon-on-insulator wafer (Silicon-on-insulator) and CIS (cmos image sensor) field etc..
Currently, there are many techniques being bonded for silicon-Silicon Wafer grade.Wherein, Jin-gold thermocompression bonding is that one kind has middle layer
Solid-state connection type, belong to that metal is diffusion interlinked, early have become the wafer-level package technology of standard.The diffusion interlinked technology of metal
It needs to apply temperature field and pressure field to substrate to be bonded simultaneously, the metallic atom of bonded interface can be made from lattice in this way
One site is transferred to another site, while the gap of bonded interface being more combined together.Jin-gold thermocompression bonding needs to be bonded
Intimate surface contact, it is ensured that metallic atom can realize the migration of atom by lattice vibration.Metallic atom is diffused with surface
Diffusion, grain boundary decision and body spread three kinds of different paths.The mainly temperature and pressure two that Jin-gold thermocompression bonding process considers
A condition.Temperature is higher, and gold is softer, and under pressure, deformation and diffusion are stronger, and bonding effect is better；Equally, certain
At a temperature of, the pressure of application is bigger, and it is better that surface contacts under the effect of the pressure, and bonding effect is better.Jin-gold thermocompression bonding
Required temperature is not high, and temperature is greater than 300 DEG C, but applies pressure limit need > 40KN.By taking 4inch wafer as an example, realize entire
The bonding of bonding face region needs bonder offer~6MPa pressure, this has greatly tested the pressure system of bonding apparatus.
Summary of the invention
The purpose of the present invention is overcoming the deficiencies in the prior art, provide in a kind of raising silicon face nanoforest
Jin-gold thermocompression bonding intensity method, can effectively improve gold-gold bonding intensity, ensure that the stability of Vacuum Package device
And air-tightness.
According to technical solution provided by the invention, Jin-gold thermocompression bonding intensity in the raising silicon face nanoforest
Method, described method includes following steps:
Step 1 provides the first wafer and prepares required nanoforest structure on first wafer, and the nanometer is gloomy
Woods structure includes several taper nanometer bodies；
Step 2 prepares required aciculiform metal layer, the aciculiform metal in the nanoforest structure of above-mentioned first wafer
In layer covering nanoforest structure；
Step 3 provides the second wafer and prepares required plate shape metal layer on second wafer；
The plate shape metal layer alignment of second wafer is placed on the aciculiform metal layer of the first wafer by step 4, so that plate shape gold
Belong to layer to contact with aciculiform metal layer；Single step thermocompression bonding is carried out to plate shape metal layer and aciculiform metal layer, to obtain the first wafer
It is bonded with the wafer scale of the second wafer.
In step 4, when carrying out single step thermocompression bonding to plate shape metal layer (7), aciculiform metal layer (4), every step diameter pressure is
0.01MPa~0.02MPa, single step diameter retention time are 5min~10min.
In the step 1, the process that nanoforest structure is prepared is specifically included:
Step 1.1 obtains polymeric layer in the front surface coated of the first wafer, and carries out plasma to the polymeric layer
Bombardment, to be supported in several columnar nanometer bodies in the first wafer frontside；
Step 1.2 carries out anisotropic etching to the first wafer using above-mentioned columnar nanometer body, to obtain being located at the column
Taper nanometer body immediately below shape nanometer body；
Columnar nanometer body in step 1.3, the above-mentioned taper nanometer body of removal, with brilliant first using several taper nanometer bodies
Round front forms nanoforest structure.
After the front surface coated of the first wafer obtains polymeric layer, the polymeric layer is patterned, to obtain
The polymer graphic needed；
When carrying out plasma bombardment to the polymeric layer with polymer graphic, to be supported using polymeric layer
In several columnar nanometer bodies in the first wafer frontside；Using the columnar nanometer body is being carried out to the first wafer anisotropy quarter
When erosion, to obtain patterned nanoforest structure.
In the step 3, after obtaining plate shape metal layer, the plate shape metal layer is patterned, to obtain figure
The plate shape metal layer of change, the patterned plate shape metal layer can be corresponding with the aciculiform metal layer on the first wafer, so as to figure
The plate shape metal layer of change contacts after capable of being aligned with the aciculiform metal layer of the first wafer.
The polymeric layer includes positive photoresist, negative photoresist or polyimides, polymeric layer with a thickness of 3 μm~
5μm。
The base diameter of the taper nanometer body is 150nm~200nm, the diameter at taper nanometer body tip be 10nm~
30nm。
The aciculiform metal layer is covered in nanoforest structure using electro-plating method, aciculiform metal layer with a thickness of 1 μm
~2 μm.
The plasma bombarded polymeric layer includes oxygen plasma or argon plasma.
The diameter of the columnar nanometer body is 15nm~250nm, and the height of columnar nanometer body is 50nm~3 μm.
Advantages of the present invention: in the front preparation nanoforest structure of the first wafer 1, needle is covered in nanoforest structure
Shape metal layer 4 prepares the plate shape metal layer 7 with nanoforest physical fit on the second wafer 5；Aciculiform metal layer 4 and plate shape
When the alignment of metal layer 7 contact and thermocompression bonding, using single step diameter bonding pattern, i.e., need the Region Decomposition being bonded at more full wafer
A single step thermocompression bonding (step pressing bonding, SPB), so that total bonding area increases, bond strength is improved.
The feature of existing thermocompression bonding maximum is that pressure suffered by bonding pad is evenly load, and SPB is then to apply single step
Diameter pressure, single step bonding process are only bonded in regional area.SPB is provided in the regional area of bonding than existing
There is the bonding pressure that thermocompression bonding is bigger, promote coming into full contact with for bonded interface, enhances the metallic atom at bonded interface in gold
Belong to the counterdiffusion effect between layer, and then enhances bond strength.Meanwhile existing thermocompression bonding is the area entire bonding face Shang Ge
Domain is bonded simultaneously, and the bonding of the full wafer of SPB multiple single steps bonding superposition the result is that be made of, so that total bonding area is with cone
Shape nanostructured surface product increase and increase.In addition, the pyramidal structure of nanoforest provides for the residual gas of interface
Enough passing aways significantly improve cavitation caused by bonded interface bubble, ensure that the steady of Vacuum Package device
Qualitative and air-tightness.
Detailed description of the invention
FIG. 1 to FIG. 8 is the first wafer of the invention, the second wafer is bonded fixation using aciculiform metal layer, plate shape metal layer
Specific implementation process step cross-sectional view, wherein
Fig. 1 is the cross-sectional view of the first wafer of the invention.
Fig. 2 is cross-sectional view of the present invention after the front setting polymeric layer of the first wafer.
Fig. 3 is that the present invention obtains the cross-sectional view after cylindricality nanometer body.
Fig. 4 is that the present invention obtains the cross-sectional view after taper nanometer body.
Fig. 5 is the cross-sectional view after present invention removal cylindricality nanometer body.
Fig. 6 is that the present invention obtains the cross-sectional view after aciculiform metal layer.
Fig. 7 is cross-sectional view of the present invention on the second wafer after arranging plate shape metal layer.
Fig. 8 is the cross-sectional view of plate shape metal layer of the present invention and the thermocompression bonding of aciculiform metal layer.
Fig. 9~Figure 16 is the first wafer of the invention, the second wafer is bonded fixation using aciculiform metal layer, plate shape metal layer
Another specific implementation process step cross-sectional view, wherein
Fig. 9 is the cross-sectional view of the first wafer of the invention.
Figure 10 is that the present invention obtains the cross-sectional view after polymer graphic.
Figure 11 is that the present invention obtains the cross-sectional view after cylindricality nanometer body.
Figure 12 is that the present invention obtains the cross-sectional view after taper nanometer body.
Figure 13 is the cross-sectional view after present invention removal cylindricality nanometer body.
Figure 14 is that the present invention obtains the cross-sectional view after aciculiform metal layer.
Figure 15 is that the present invention obtains the cross-sectional view after plate shape metal layer image.
Figure 16 is the cross-sectional view of plate shape metal layer of the present invention and the thermocompression bonding of aciculiform metal layer.
Description of symbols: the first wafer of 1-, 2- polymeric layer, 3- taper nanometer body, 4- aciculiform metal layer, 5- second are brilliant
Circle, 6- cylindricality nanometer body, 7- plate shape metal layer, 8- polymer graphic and 9- plate shape metal layer image.
Specific embodiment
Below with reference to specific drawings and examples, the invention will be further described.
In order to effectively improve gold-gold bonding intensity, the method for the present invention includes following steps:
Step 1 provides the first wafer 1 and prepares required nanoforest structure, the nanometer on first wafer 1
Forest structure includes several taper nanometer bodies 3；
Specifically, the first wafer 1 can use Silicon Wafer, and nanoforest structure is specifically prepared on the first wafer 1
Detailed process can refer to FIG. 1 to FIG. 5 explanation, detailed process are as follows:
Step 1.1 obtains polymeric layer 2 in the front surface coated of the first wafer 1, and to the polymeric layer 2 carry out etc. from
Daughter bombardment, to be supported in several columnar nanometer bodies 6 on 1 front of the first wafer；
In the embodiment of the present invention, the polymeric layer 2 includes positive photoresist, negative photoresist or polyimides, polymerization
Nitride layer 2 with a thickness of 3 μm~5 μm.The specific material type of polymeric layer 2, which can according to need, to be selected, no longer superfluous herein
It states.
Obtain realizing especially by following manner for polymeric layer 2 in the front surface coated of the first wafer 1: take about 10ml~
The polymer solution of 20ml simultaneously drips at the positive center of the first wafer 1, using sol evenning machine 600r/s~800r/s low speed
It spreads 5s~8s out, then uses high speed rotation again, when high-speed rotation, revolving speed is 1500r/s~2500r/s, rotation time 30s
~40s.Again after spin coating, above-mentioned first wafer 1 is toasted, baking temperature is 100 DEG C~120 DEG C, baking time 20min
~30min, so as to obtain polymeric layer 2 in the front of the first wafer 1, as depicted in figs. 1 and 2.
After obtaining polymeric layer 2, using plasma bombards polymeric layer 2, to form columnar nanometer body 6.It can adopt
The technique of plasma bombardment needed for being carried out with resist remover, plasma can be argon plasma, oxygen plasma or nitrogen
Plasma etc., or other it is any can be to the plasma that polymer is bombarded.In plasma bombardment technique
In, the flow of plasma gas source is 100sccm~250sccm, and chamber pressure is 80mTorr~120mTorr, radio-frequency power
For 400W~600W, the processing time is 20min~40min.After plasma bombardment, in the area of original polymeric layer 2
Columnar nanometer body 6 is formed on domain, the diameter of columnar nanometer body 6 is about 15-250nm, and about 50nm-3 μm of height, columnar nanometer knot
Distance between structure is also nano-scale, as shown in Figure 3.
Step 1.2 carries out anisotropic etching to the first wafer 1 using above-mentioned columnar nanometer body, described to obtain being located at
Taper nanometer body 3 immediately below columnar nanometer body；
With columnar nanometer body 6 be masking, to the first wafer 1 carry out anisotropic etching, so as to the first wafer 1 just
Face forms cone cell nanometer body 3, as shown in Figure 4.The cone cell nanometer body 3 is located at the underface of columnar nanometer body 6, columnar nanometer body
6 bottom is supported on the top of cone cell nanometer body 3.
When it is implemented, the anisotropic etch process needed for being carried out using reactive ion etching (RIE) equipment.It carves
Losing gas can be Cl2, Br2, CF3Br etc. or SF6/CHF3/ He, SF6/Cl2, SF6/O2/CHF3It is carried out according to required ratio
Mixed gas.In the embodiment of the present invention, using SF6/CHF3The mixed gas of/He, gas flow be respectively 5.5sccm~
6.5sccm, 30sccm~40sccm, 150sccm~200sccm；Cavity internal pressure is 1800mTorr~2000mTorr, radio frequency
Power is 200W~250W, and etch period is 20min~30min.The base diameter of obtained cone cell nanoforest body 3 is about
150~200nm, tip diameter are about 10~30nm, and height is about 800~900nm.When using other progress anisotropy quarters
When erosion, the conditions such as specific gas flow with it is existing etching require it is consistent, specially known to those skilled in the art, herein
It repeats no more.
Columnar nanometer body 6 in step 1.3, the above-mentioned taper nanometer body 3 of removal, with using several taper nanometer bodies 3 the
The front of one wafer 1 forms nanoforest structure.
In the embodiment of the present invention, columnar nanometer body 6 can be removed using resist remover, after removing columnar nanometer body 6, first
The front of wafer 1 obtains a large amount of taper nanometer body 3, i.e., can form nanoforest structure using the taper nanometer body 3, such as schemes
Shown in 5.Technique is bombarded using oxygen plasma by resist remover and removes columnar nanometer body 6, concrete technology condition are as follows: plasma
Gas source and flow amount is 200~300sccm, and chamber pressure is 80~100mTorr, and radio-frequency power is 400~500W, and the processing time is about
For 1.5~2.0h.
Step 2 prepares required aciculiform metal layer 4, the aciculiform gold in the nanoforest structure of above-mentioned first wafer 1
Belong to layer 4 to cover in nanoforest structure；
In the embodiment of the present invention ,~2 μm of metal layer can be covered using electric plating method to get covering nanoforest is arrived
Aciculiform metal layer 4 in structure.In plating, the temperature of electroplate liquid is 60~70 DEG C, and electroplating current size is 5mA~20mA,
Electroplating time is 20min~40min.The aciculiform metal layer 4 is layer gold, and aciculiform metal layer 4 is placed only in nanoforest
In structure, as shown in Figure 6.
Step 3 provides the second wafer 5 and prepares required plate shape metal layer 7, the plate shape on second wafer 5
Metal layer 7 is layer gold；
When it is implemented, plate shape metal layer 7 can be arranged on the second wafer 5 using electroplating technology, specific technique
Condition can refer to above description, plate shape metal layer 7 with a thickness of 1~2 μm, as shown in Figure 7.
The alignment of plate shape metal layer 7 of second wafer 5 is placed on the aciculiform metal layer 4 of the first wafer 1 by step 4, so that plate
Shape metal layer 7 is contacted with aciculiform metal layer 4；Single step thermocompression bonding is carried out to plate shape metal layer 7 and aciculiform metal layer 4, to obtain
First wafer 1 is bonded with the wafer scale of the second wafer 5.
In implementation column of the present invention, needs for the second wafer 5 to be aligned with the first wafer 1, that is, need plate shape metal layer 7 and needle
Shape metal layer 4 is aligned, and after alignment, plate shape metal layer 7 is contacted with aciculiform metal layer 4, and the second wafer 5 is being placed in the first wafer 1 just
Top prepares for subsequent thermocompression bonding.
In thermocompression bonding, is vacuumized in the chamber of bonder and reach~10-3Pa, after vacuum degree reaches, pumping opens pad
Piece contacts after two sheet shape metal layers 7 are aligned with aciculiform metal layer 4；Bonding temperature is first slowly raised to 300~350 DEG C,
Para-linkage piece applies step diameter pressure, and the pressure of every step diameter is 0.01~0.02MPa, and the single step diameter retention time is 5~10mins, most
It is bonded the 0.2~0.3MPa that need to pressurize eventually, is bonded total 100~150mins of process, completes solidification with this condition.The present invention is implemented
In example, the step diameter quantity that para-linkage piece applies, which can according to need, to be determined, as long as energy single step diameter pressure, single step diameter are kept
Between meet above-mentioned value, and be finally reached required bonding pressure.
After thermocompression bonding, first turn off temperature, etc. after temperature naturally cool to room temperature, then turn off the upper and lower pressure head of bonder
Pressure, complete bonding process, i.e. by between plate shape metal layer 7, aciculiform metal layer 4 between the first wafer 1, the second wafer 5
Bonding, which is realized, to be fixed, as shown in Figure 8.
As shown in Fig. 9~Figure 16, in a particular embodiment, it can also prepare according to actual needs with patterned nanometer
Forest structure, specifically, carrying out figure to the polymeric layer 2 after the front surface coated of the first wafer 1 obtains polymeric layer 2
Change, to obtain required polymer graphic 8.When being patterned to polymeric layer 2, it can be arranged on polymeric layer 2 and cover
Film layer, the mask layer can be positive photoresist or negative photoresist, be performed etching using mask layer to polymeric layer 2, so
After remove mask layer, to obtain patterned polymeric layer 2, the concrete form of polymer graphic 8 is according to patterned nanometer
Forest structure determines that detailed process is known to those skilled in the art, this is repeated no more.
Further, when carrying out plasma bombardment to the polymeric layer 2 with polymer graphic 8, to utilize polymerization
Nitride layer 2 is supported in several columnar nanometer bodies 6 on 1 front of the first wafer；Brilliant to first using the columnar nanometer body 6
When circle 1 carries out anisotropic etching, to obtain patterned nanoforest structure.
In implementation column of the present invention, after being patterned to polymeric layer 2, i.e. endless the first wafer of all standing 1 of polymeric layer 2
On, therefore, obtained columnar nanometer body 6 is graphical related to polymeric layer 2, so as to using columnar nanometer body 6 to the
When one wafer 1 carries out anisotropic etching, patterned nanoforest structure can be obtained, i.e. partial region is not on the first wafer 1
There are taper nanometer bodies 3, and as shown in Figure 12, Figure 13 and Figure 14, but taper nanometer body 3 is only in the underface of columnar nanometer body 6.?
The specific embodiment and subsequent technical process for preparing taper nanometer body 3 can refer to above description, this time no longer superfluous
It states.
Further, after obtaining plate shape metal layer 7, the plate shape metal layer 7 is patterned, it is graphical to obtain
Plate shape metal layer 7, the patterned plate shape metal layer 7 can be corresponding with the aciculiform metal layer 4 on the first wafer 1, to scheme
The plate shape metal layer 7 of shape contacts after capable of being aligned with the aciculiform metal layer 4 of the first wafer 1.
In implementation column of the present invention, after patterned nanoforest structure is prepared on the first wafer 1, in the second wafer
It after plate shape metal layer 7 is prepared on 5, needs to be patterned plate shape metal layer 7, to obtain plate shape metal layer image 9, institute
It is graphical corresponding consistent with nanoforest structure to state plate shape metal layer image 9, as shown in Figure 15 and Figure 16.Plate is being prepared
The detailed process of shape metal layer image 9 with it is existing consistent to the patterned process of metal layer, details are not described herein again.
To sum up, compared with the technical process of FIG. 1 to FIG. 8, only increase to the graphical of polymeric layer 2 and to plate shape gold
Belong to the graphical of layer 7, and patterned nanoforest structure can be obtained using the polymeric layer 2 after graphical, after graphical
Plate shape metal layer 7 can with it is graphical after nanoforest physical fit；Remaining technical process with the technical process of FIG. 1 to FIG. 8
Consistent, detailed process can refer to above description, this is repeated no more.
In implementation column of the present invention, in the front preparation nanoforest structure of the first wafer 1, covered in nanoforest structure
Aciculiform metal layer 4 prepares the plate shape metal layer 7 with nanoforest physical fit on the second wafer 5；Aciculiform metal layer 4 and plate
The alignment of shape metal layer 7 contact and when thermocompression bonding, using single step diameter bonding pattern, i.e., the Region Decomposition that needs to be bonded by full wafer at
Multiple single step thermocompression bondings (step pressing bonding, SPB), so that total bonding area increases, bond strength is mentioned
It is high.
The feature of existing thermocompression bonding maximum is that pressure suffered by bonding pad is evenly load, and SPB is then to apply single step
Diameter pressure, single step bonding process are only bonded in regional area.SPB is provided in the regional area of bonding than existing
There is the bonding pressure that thermocompression bonding is bigger, promote coming into full contact with for bonded interface, enhances the metallic atom at bonded interface in gold
Belong to the counterdiffusion effect between layer, and then enhances bond strength.Meanwhile existing thermocompression bonding is the area entire bonding face Shang Ge
Domain is bonded simultaneously, and the bonding of the full wafer of SPB multiple single steps bonding superposition the result is that be made of, so that total bonding area is with cone
Shape nanostructured surface product increase and increase.In addition, the pyramidal structure of nanoforest provides for the residual gas of interface
Enough passing aways significantly improve cavitation caused by bonded interface bubble.
Claims (10)
1. a kind of Jin-gold thermocompression bonding intensity method in raising silicon face nanoforest, characterized in that the method includes such as
Lower step:
Step 1 provides the first wafer (1) and prepares required nanoforest structure, the nanometer on first wafer (1)
Forest structure includes several taper nanometer bodies (3)；
Step 2 prepares required aciculiform metal layer (4), the aciculiform gold in the nanoforest structure of above-mentioned first wafer (1)
Belong in layer (4) covering nanoforest structure；
Step 3 provides the second wafer (5) and prepares required plate shape metal layer (7) on second wafer (5)；
Plate shape metal layer (7) alignment of second wafer (5) is placed on the aciculiform metal layer (4) of the first wafer (1) by step 4, is made
Plate shape metal layer (7) is obtained to contact with aciculiform metal layer (4)；Single step hot pressing is carried out to plate shape metal layer (7) and aciculiform metal layer (4)
Bonding, is bonded with obtaining the first wafer (1) with the wafer scale of the second wafer (5).
2. Jin-gold thermocompression bonding intensity method in raising silicon face nanoforest according to claim 1, feature
It is that in step 4, when carrying out single step thermocompression bonding to plate shape metal layer (7), aciculiform metal layer (4), every step diameter pressure is
0.01MPa~0.02MPa, single step diameter retention time are 5min~10min.
3. Jin-gold thermocompression bonding intensity method in raising silicon face nanoforest according to claim 1, feature
It is that in the step 1, the process that nanoforest structure is prepared is specifically included:
Step 1.1 is obtained polymeric layer (2) in the front surface coated of the first wafer (1), and is carried out to the polymeric layer (2) etc.
Gas ions bombardment, to be supported in several columnar nanometer bodies (6) on the first wafer (1) front；
Step 1.2 carries out anisotropic etching to the first wafer (1) using above-mentioned columnar nanometer body, to obtain being located at the column
Taper nanometer body (3) immediately below shape nanometer body；
Columnar nanometer body (6) in step 1.3, the above-mentioned taper nanometer body (3) of removal, to be existed using several taper nanometer bodies (3)
The front of first wafer (1) forms nanoforest structure.
4. Jin-gold thermocompression bonding intensity method in raising silicon face nanoforest according to claim 3, feature
It is after the front surface coated of the first wafer (1) obtains polymeric layer (2), to be patterned to the polymeric layer (2), with
To required polymer graphic (8)；
When carrying out plasma bombardment to the polymeric layer (2) with polymer graphic (8), to be obtained using polymeric layer (2)
To several columnar nanometer bodies (6) being supported on the first wafer (1) front；Brilliant to first using the columnar nanometer body (6)
When circle (1) carries out anisotropic etching, to obtain patterned nanoforest structure.
5. Jin-gold thermocompression bonding intensity method in raising silicon face nanoforest according to claim 4, feature
It is in the step 3, after obtaining plate shape metal layer (7), to be patterned to the plate shape metal layer (7), to obtain figure
The plate shape metal layer (7) of change, the patterned plate shape metal layer (7) can be right with the aciculiform metal layer (4) on the first wafer (1)
It answers, is contacted after capable of being aligned with the aciculiform metal layer (4) of the first wafer (1) so as to patterned plate shape metal layer (7).
6. Jin-gold thermocompression bonding intensity method in the raising silicon face nanoforest according to claim 3 or 4 or 5,
Be characterized in, the polymeric layer (2) includes positive photoresist, negative photoresist or polyimides, polymeric layer (2) with a thickness of
3 μm~5 μm.
7. Jin-gold thermocompression bonding intensity method in raising silicon face nanoforest according to one of claims 1 to 5,
It is characterized in that the base diameter of the taper nanometer body (3) is 150nm~200nm, the diameter at taper nanometer body (3) tip is
10nm~30nm.
8. Jin-gold thermocompression bonding intensity method in raising silicon face nanoforest according to claim 1, feature
That the aciculiform metal layer (4) is covered in nanoforest structure using electro-plating method, aciculiform metal layer (4) with a thickness of 1 μm
~2 μm.
9. Jin-gold thermocompression bonding intensity method in raising silicon face nanoforest according to claim 3, feature
It is that the plasma bombarded polymeric layer (2) includes oxygen plasma or argon plasma.
10. Jin-gold thermocompression bonding intensity method in raising silicon face nanoforest according to claim 3, feature
It is that the diameter of the columnar nanometer body (6) is 15nm~250nm, the height of columnar nanometer body (6) is 50nm~3 μm.
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| CN111415901A (en) * | 2020-04-01 | 2020-07-14 | 苏州研材微纳科技有限公司 | Temporary bonding process for semiconductor devices |
| CN111584378A (en) * | 2019-02-19 | 2020-08-25 | 中科院微电子研究所昆山分所 | Plug-in type hot-press bonding method |
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