CN104979280A - Carbon nano-tube cluster transfer method used for through silicon via interconnection - Google Patents
Carbon nano-tube cluster transfer method used for through silicon via interconnection Download PDFInfo
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- CN104979280A CN104979280A CN201510255020.8A CN201510255020A CN104979280A CN 104979280 A CN104979280 A CN 104979280A CN 201510255020 A CN201510255020 A CN 201510255020A CN 104979280 A CN104979280 A CN 104979280A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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Abstract
The present invention discloses a carbon nano-tube cluster transfer method used for through silicon via interconnection. The method is applied in the technical field of microelectronic device manufacturing process. The method comprises the following steps of: firstly, attaching an adhesive tape to any surface of a chip with a through silicon via or a wafer, which serves as a transfer medium; and then by means of a flip chip bonding apparatus, aligning a graphical carbon nano-tube cluster with the through silicon via, and under a certain bonding pressure condition, implementing the contact of the carbon nano-tube cluster with the tape attached to the surface of the chip with the through silicon via or the wafer, wherein the adhesion strength between the tape and the carbon nano-tube cluster remains in the through silicon via, thereby implementing the transfer. The method provided by the present invention is implemented at the room temperature and does not need additional equipment. Meanwhile, by using the method, transfer with a large area and a high success rate can be performed, and thus the requirements of miniaturization and densification of electronic elements are satisfied, the production cost can be reduced, and the production efficiency can be improved.
Description
Technical field
The present invention relates to a kind of chip packaging method, particularly relate to a kind of interconnecting silicon through holes method on chip, be applied to microelectronic component manufacturing process technology field.
Background technology
Because carbon nano-tube has the mechanical strength of superelevation, outstanding conduction and heat conductivility and stable chemical property, obtained in the silicon through hole in microelectronics Packaging field is interconnected in recent years and studied widely, but due to the growth temperature (700 DEG C) of carbon nano-tube and the incompatible type of CMOS (Complementary Metal Oxide Semiconductor) technology (lower than 400 DEG C), make it can not be directly used in the interconnecting silicon through holes made on the chip of device, the transfer after therefore needing carbon nano tube bundle to grow.At present, multiple method has been suggested and has addressed this problem, and such as, by coating electrically conductive glue, evaporation metal indium or solder alloy serve as medium transfer.But all there is the problems such as complex process, high temperature bonding or transfer Post RDBMS in these methods.The lower power that translates into also constrains the utilization of carbon nano tube bundle in interconnecting silicon through holes further simultaneously.
Summary of the invention
In order to solve prior art problem, the object of the invention is to the deficiency overcoming prior art existence, a kind of carbon nano tube bundle printing transferring method for interconnecting silicon through holes is provided, adhesive tape is adopted to assist the transfer at room temperature realized carbon nano tube bundle, the transfer of the carbon nano tube bundle for interconnecting silicon through holes that adhesive tape is assisted not only at room temperature realizes fast, do not need the equipment of additional complexity, the method can carry out the transfer printing of large area, high success rate simultaneously.Carbon nano tube salient points can significantly improve the electricity of packaging interconnection, heat and mechanical performance and meet electronic devices and components densification and miniaturization trend.High growth temperature environment due to carbon nano-tube causes carbon nano tube salient points can not direct growth take shape on semiconductor device, and need the carbon nano tube salient points that will have grown, the present invention is transferred on required semiconductor device by transfer techniques.
Create object for reaching foregoing invention, the present invention adopts following technical proposals:
For a carbon nano tube bundle printing transferring method for interconnecting silicon through holes, comprise the steps:
1. use photoetching process or deep reactive ion etch on silicon chip, produce a series of silicon through holes of setting shape and arrangement, form silicon via-hole array pattern, the aperture of silicon through hole is 200 ~ 300 microns;
2. adhesive gel take to step 1. in prepared have on the surface of side, the back side of the silicon chip of silicon through hole, make the adhesive surface of adhesive tape towards in silicon through hole, as medium transfer; Adhesion adhesive tape as the medium transfer of carbon nano tube bundle preferably adopts Teflon adhesive tape, adhesive tape or heat to depart from adhesive tape;
3. adopt another silicon chip as auxiliary silicon slice, on auxiliary silicon slice, use chemical vapour deposition technique at auxiliary silicon slice continued growth carbon nano tube bundle above patterned catalyst layer on the surface, the diameter of each carbon nano-tube is all 300 microns, the top free ends face height of each carbon nano-tube is concordant, then by the acetone gas of evaporation, densified is carried out to carbon nano tube bundle, the carbon nano-tube in the arrangement mode pattern of carbon nano tube bundle and the through hole one_to_one corresponding in the via-hole array pattern prepared in step a; Preferred use e-beam evaporation deposits the Catalytic Layer that one deck is made up of the alundum (Al2O3) of 10 nanometer thickness and the iron of 1 nanometer thickness on auxiliary silicon slice, preferred use isopropyl acetone and deionized water wash away the catalyst layer on photoresist and photoresist, carry out graphically to catalyst layer, Discrete Growth carbon nano-tube bundle on catalyst layer, forms carbon nano tube bundle; Preferably acetylene, hydrogen and hydrogen are passed in the reative cell of chemical gas-phase deposition system, under being preferable over 700 degrees Celsius, react 5-10 minute, by chemical vapour deposition technique carbon nano-tube bundle on the catalyst layer of auxiliary silicon slice;
4. Flip chip method is adopted, by step 3. in the carbon nano-tube of carbon nano tube bundle after densification aim at one by one with the silicon through hole in step 2. middle auxiliary silicon slice, by applying setting pressure, make the top of carbon nano tube bundle contact also adhesive bond with the adhesive surface of the adhesive tape at the back side of the silicon through hole of auxiliary silicon slice and together, between the carbon nano-tube in immigration silicon through hole and silicon through-hole wall, produce gap;
5. by step 4. in auxiliary silicon slice and carbon nano tube bundle base section from, auxiliary silicon slice is removed;
6. apply curable epoxy resin to step 5. in carbon nano tube bundle and silicon through hole between all gaps in, and to be cured, to make carbon nano-tube be fixed in corresponding silicon through hole; Preferably by vacuum treatment, make epoxy resin filling in all gaps of carbon nano-tube and silicon through hole;
7. until after the step 6. middle epoxy resin cure adopted, polish front side of silicon wafer by physics finishing method or cmp method, and carbon nano tube bundle is exposed; After epoxy cure, polishing and chemical-mechanical planarization method is preferably used to polish smooth carbon nano tube bundle surface; When adopting grinding rotating speed during physics finishing method to be preferably 25 rpms, applied pressure is preferably 15Kpa; Adopt polishing rotating speed during chemical-mechanical planarization method to be preferably 30 rpms, applied pressure is preferably 15Kpa;
8. medium transfer adhesive tape is removed, and the surface of cleaning silicon chip;
9. at the graphical one deck titanium/gold plate of the silicon chip back side of cleaning, titanium/gold plate is conducted electricity with the carbon nano tube bundle in silicon chip and is connected, wherein the thickness of titanium is 25 ~ 40 nanometers, and the thickness of gold is 300 ~ 500 nanometers.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and remarkable advantage:
1. the inventive method uses this room temperature quick transferring technology, can realize the room temperature of carbon nano tube salient points, fast, large area, high success rate transfer printing;
2. the inventive method does not need extra equipment, and the method can carry out the transfer printing of large area, high success rate simultaneously, and then meets electronic devices and components densification and miniaturized requirement, can reduce production cost, enhance productivity.
Accompanying drawing explanation
Fig. 1 is the carbon nano tube bundle printing transferring method process schematic of the preferred embodiment of the present invention for interconnecting silicon through holes.
Fig. 2 is that preferred embodiment of the present invention method is by chemical vapour deposition technique carbon nano-tube bundle microsctructural photograph on auxiliary silicon slice.
Fig. 3 be in preferred embodiment of the present invention method after densification carbon nano tube bundle microsctructural photograph.
Fig. 4 is preferred embodiment of the present invention method microsctructural photograph when making carbon nano tube bundle and adhesive tape realize contacting.
Fig. 5 is that preferred embodiment of the present invention method uses polishing and chemical-mechanical planarization method to polish the micrograph on smooth carbon nano tube bundle surface.
Embodiment
Details are as follows for the preferred embodiments of the present invention:
embodiment one:
In the present embodiment, see Fig. 1 ~ Fig. 5, a kind of carbon nano tube bundle printing transferring method for interconnecting silicon through holes, comprises the steps:
1. use photoetching process and deep reactive ion etch to be a series of silicon through holes 6 silicon chip 5 of 0.3 centimetre producing setting shape and arrangement at thickness, form silicon via-hole array pattern, the aperture of silicon through hole 6 is 300 microns, as shown in (c) in Fig. 1;
2. adhere to adhesive tape 7 to step 1. on the surface of the side, the back side of the silicon chip 5 with silicon through hole 6 of having prepared, adhesive tape 7 adopts Teflon adhesive tape, makes the adhesive surface of adhesive tape 7 towards in silicon through hole 6, as medium transfer, as shown in (d) in Fig. 1;
3. adopt another silicon chip as auxiliary silicon slice 4, on auxiliary silicon slice 4, use e-beam evaporation deposits the Catalytic Layer 3 that one deck is made up of the alundum (Al2O3) of 10 nanometer thickness and the iron of 1 nanometer thickness on auxiliary silicon slice 4, use isopropyl acetone and deionized water wash away the catalyst layer 3 on photoresist and photoresist, carry out graphically to catalyst layer 3, by acetylene, hydrogen and hydrogen pass in the reative cell liking to think strong Black Magic chemical gas-phase deposition system, react 10 minutes under 700 degrees Celsius, by chemical vapour deposition technique carbon nano-tube bundle 1 on the catalyst layer 3 of auxiliary silicon slice 4, as shown in (a) He Fig. 2 in Fig. 1, form carbon nano tube bundle, the diameter of each carbon nano-tube is all 300 microns, the top free ends face height of each carbon nano-tube is concordant, then by the acetone gas of evaporation, densified is carried out to carbon nano tube bundle, carbon nano-tube in the arrangement mode pattern of carbon nano tube bundle and the through hole one_to_one corresponding in the via-hole array pattern prepared in step a, after fine and close, carbon nano tube bundle 2 is as shown in (b) He Fig. 3 in Fig. 1,
4. Flip chip method is adopted, by step 3. in fine and close after the carbon nano-tube of carbon nano tube bundle 2 aim at one by one with the silicon through hole 6 in step 2. middle auxiliary silicon slice, by applying setting pressure, make the top of carbon nano tube bundle contact with the adhesive surface of the adhesive tape 7 at the back side of the silicon through hole 6 of auxiliary silicon slice and adhesive bond together, gap is produced between carbon nano-tube in immigration silicon through hole 6 and silicon through hole 6 inwall, as shown in (e) He Fig. 4 in Fig. 1, see Fig. 4;
5. by step 4. in auxiliary silicon slice 4 and carbon nano tube bundle base section from, auxiliary silicon slice 4 is removed, as shown in (f) in Fig. 1;
6. by vacuum treatment, apply curable epoxy resin 8 to step 5. in carbon nano tube bundle and silicon through hole 6 between all gaps in, and to be cured, to make carbon nano-tube be fixed in corresponding silicon through hole 6, as shown in (g) in Fig. 1;
7. after in step, 6. the middle epoxy resin 8 adopted solidifies, smooth carbon nano tube bundle surface is polished by polishing and chemical-mechanical planarization method, and carbon nano tube bundle is exposed, as shown in (h) He Fig. 5 in Fig. 1, when grinding rotating speed when adopting physics finishing method is 25 rpms, applied pressure is 15Kpa; Polishing rotating speed when adopting chemical-mechanical planarization method is 30 rpms, and applied pressure is 15Kpa;
8. medium transfer adhesive tape 7 is removed, and the surface of cleaning silicon chip 5, as shown in Fig. 1 (i);
9. at the back-patterned one deck titanium/gold plate of the silicon chip 5 of cleaning, titanium/gold plate is conducted electricity with the carbon nano tube bundle in silicon chip and is connected, wherein the thickness of titanium is 40 nanometers, and the thickness of gold is 300 nanometers.
In the present embodiment, first, attach tool sticking adhesive tape to the chip of silicon through hole or the arbitrary surface of wafer, serve as transfer printing medium; Then by face-down bonding equipment, make patterned carbon nano tube bundle and silicon through-hole alignment, under certain bonding pressure condition, realize carbon nano tube bundle and the chip be attached to silicon through hole or wafer adhesive strips contact simultaneously, cohesive force between adhesive tape and carbon nano tube bundle can be stayed in silicon through hole, under the rank of two cun of wafers, successfully achieve transfer.The inventive method at room temperature realizes, and does not need extra equipment.The method can carry out the transfer printing of large area, high success rate simultaneously, and then meets electronic devices and components densification and miniaturized requirement, can reduce production cost, enhance productivity.
By reference to the accompanying drawings the embodiment of the present invention is illustrated above; but the invention is not restricted to above-described embodiment; multiple change can also be made according to the object of innovation and creation of the present invention; change, the modification made under all Spirit Essences according to technical solution of the present invention and principle, substitute, combination, to simplify; all should be the substitute mode of equivalence; as long as goal of the invention according to the invention; only otherwise deviate from the present invention for the know-why of the carbon nano tube bundle printing transferring method of interconnecting silicon through holes and inventive concept, all protection scope of the present invention is belonged to.
Claims (7)
1., for a carbon nano tube bundle printing transferring method for interconnecting silicon through holes, it is characterized in that, comprise the steps:
1. use photoetching process or deep reactive ion etch on silicon chip, produce a series of silicon through holes of setting shape and arrangement, form silicon via-hole array pattern, the aperture of silicon through hole is 200 ~ 300 microns;
2. adhesive gel take to described step 1. in prepared have on the surface of side, the back side of the silicon chip of silicon through hole, make the adhesive surface of adhesive tape towards in silicon through hole, as medium transfer;
3. adopt another silicon chip as auxiliary silicon slice, on auxiliary silicon slice, use chemical vapour deposition technique at auxiliary silicon slice continued growth carbon nano tube bundle above patterned catalyst layer on the surface, the diameter of each carbon nano-tube is all 300 microns, the top free ends face height of each carbon nano-tube is concordant, then by the acetone gas of evaporation, densified is carried out to carbon nano tube bundle, the carbon nano-tube in the arrangement mode pattern of carbon nano tube bundle and the through hole one_to_one corresponding in the via-hole array pattern prepared in described step a;
4. Flip chip method is adopted, by described step 3. in the carbon nano-tube of carbon nano tube bundle after densification aim at one by one with the silicon through hole at described step 2. middle auxiliary silicon slice, by applying setting pressure, make the top of carbon nano tube bundle contact also adhesive bond with the adhesive surface of the adhesive tape at the back side of the silicon through hole of auxiliary silicon slice and together, between the carbon nano-tube in immigration silicon through hole and silicon through-hole wall, produce gap;
5. by described step 4. in auxiliary silicon slice and carbon nano tube bundle base section from, auxiliary silicon slice is removed;
6. apply curable epoxy resin to described step 5. in carbon nano tube bundle and silicon through hole between all gaps in, and to be cured, to make carbon nano-tube be fixed in corresponding silicon through hole;
7. until after described the step 6. middle epoxy resin cure adopted, polish front side of silicon wafer by physics finishing method or cmp method, and carbon nano tube bundle is exposed;
8. medium transfer adhesive tape is removed, and the surface of cleaning silicon chip;
9. at the graphical one deck titanium/gold plate of the silicon chip back side of cleaning, titanium/gold plate is conducted electricity with the carbon nano tube bundle in silicon chip and is connected, wherein the thickness of titanium is 25 ~ 40 nanometers, and the thickness of gold is 300 ~ 500 nanometers.
2. according to claim 1 for the carbon nano tube bundle printing transferring method of interconnecting silicon through holes, it is characterized in that: described step 3. in, use e-beam evaporation deposits the Catalytic Layer that one deck is made up of the alundum (Al2O3) of 10 nanometer thickness and the iron of 1 nanometer thickness on auxiliary silicon slice, use isopropyl acetone and deionized water wash away the catalyst layer on photoresist and photoresist, carry out graphically to catalyst layer, Discrete Growth carbon nano-tube bundle on catalyst layer, forms carbon nano tube bundle.
3. according to claim 1 or 2 for the carbon nano tube bundle printing transferring method of interconnecting silicon through holes, it is characterized in that: described step 3. in, acetylene, hydrogen and hydrogen are passed in the reative cell of chemical gas-phase deposition system, 5-10 minute is reacted, by chemical vapour deposition technique carbon nano-tube bundle on the catalyst layer of auxiliary silicon slice under 700 degrees Celsius.
4. according to claim 1 or 2 for the carbon nano tube bundle printing transferring method of interconnecting silicon through holes, it is characterized in that: described step 2. in, the adhesion adhesive tape as the medium transfer of carbon nano tube bundle adopts Teflon adhesive tape, adhesive tape or heat to depart from adhesive tape.
5. according to claim 1 or 2 for the carbon nano tube bundle printing transferring method of interconnecting silicon through holes, it is characterized in that: described step 6. in, by vacuum treatment, make epoxy resin filling in all gaps of carbon nano-tube and silicon through hole.
6. according to claim 1 or 2 for the carbon nano tube bundle printing transferring method of interconnecting silicon through holes, it is characterized in that: described step 7. in, after epoxy cure, use polishing and chemical-mechanical planarization method to polish smooth carbon nano tube bundle surface.
7. according to claim 6 for the carbon nano tube bundle printing transferring method of interconnecting silicon through holes, it is characterized in that: when grinding rotating speed when adopting physics finishing method is 25 rpms, applied pressure is 15Kpa; Polishing rotating speed when adopting chemical-mechanical planarization method is 30 rpms, and applied pressure is 15KPa.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106883828A (en) * | 2017-01-05 | 2017-06-23 | 上海大学 | The preparation method of the compound interface heat sink material based on graphing carbon nanotube array |
| CN109321143A (en) * | 2018-08-28 | 2019-02-12 | 上海大学 | Vertical carbon nanotube array and nanometer silver paste composite interconnection material and preparation method thereof |
| CN110588177A (en) * | 2019-09-30 | 2019-12-20 | 西安交通大学 | Transfer printing manufacturing method of beam film type piezoelectric array printing head |
| WO2020108097A1 (en) * | 2018-11-26 | 2020-06-04 | 南京中电芯谷高频器件产业技术研究院有限公司 | Method for holding ultra-thin semiconductor wafer in semiconductor integration process |
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| CN102417175A (en) * | 2011-09-02 | 2012-04-18 | 上海大学 | Transfer method of carbon nano tube bundle at room temperature |
| CN102683265A (en) * | 2011-03-15 | 2012-09-19 | 中国科学院微电子研究所 | Method for filling carbon nanotube bundle into through silicon via of silicon adapter plate |
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Patent Citations (4)
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| US20110052477A1 (en) * | 2009-08-25 | 2011-03-03 | Tsinghua University | Apparatus for manufacturing carbon nanotube heat sink and method for making the carbon nanotube heat sink |
| CN101872730A (en) * | 2009-11-30 | 2010-10-27 | 上海上大瑞沪微系统集成技术有限公司 | Method for filling silicon through holes by using carbon nanotube clusters |
| CN102683265A (en) * | 2011-03-15 | 2012-09-19 | 中国科学院微电子研究所 | Method for filling carbon nanotube bundle into through silicon via of silicon adapter plate |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106883828A (en) * | 2017-01-05 | 2017-06-23 | 上海大学 | The preparation method of the compound interface heat sink material based on graphing carbon nanotube array |
| CN109321143A (en) * | 2018-08-28 | 2019-02-12 | 上海大学 | Vertical carbon nanotube array and nanometer silver paste composite interconnection material and preparation method thereof |
| WO2020108097A1 (en) * | 2018-11-26 | 2020-06-04 | 南京中电芯谷高频器件产业技术研究院有限公司 | Method for holding ultra-thin semiconductor wafer in semiconductor integration process |
| CN110588177A (en) * | 2019-09-30 | 2019-12-20 | 西安交通大学 | Transfer printing manufacturing method of beam film type piezoelectric array printing head |
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