CN111584378B - Plug-in type hot-press bonding method - Google Patents
Plug-in type hot-press bonding method Download PDFInfo
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- CN111584378B CN111584378B CN201910124164.8A CN201910124164A CN111584378B CN 111584378 B CN111584378 B CN 111584378B CN 201910124164 A CN201910124164 A CN 201910124164A CN 111584378 B CN111584378 B CN 111584378B
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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Abstract
The application discloses an insertion type hot-press bonding method, wherein a copper cone is formed on a first surface of a copper substrate and formed in a direction from the vertex of the copper cone to the bottom surface of the copper cone to obtain a pretreated copper substrate, wherein the first surface is the upper surface or the lower surface of the copper substrate; and carrying out hot-pressing bonding on the device by utilizing the pretreated copper substrate. When a copper cone is formed on the first surface of the copper substrate, the copper cone is formed according to the direction from the top point to the bottom surface of the copper cone, so that a pretreated copper substrate with the copper cone on the first surface is obtained, then the pretreated copper substrate is utilized to press a device, a chemical plating method is avoided, the copper cone is prepared on the surface of the copper substrate according to the direction from the bottom surface to the top point of the cone, no specific requirements on pH value and temperature are met, the preparation process of the copper cone is simplified, and therefore the plug-in hot-press bonding method is simplified.
Description
Technical Field
The application relates to the technical field of electronic packaging, in particular to an insertion type hot-press bonding method.
Background
With the rapid development of information technology to the internet of things and artificial intelligence, the performance of Integrated Circuits (ICs) composed of tens of millions of silicon chips faces more and more challenges. Improvements in integrated circuit performance are achieved primarily through the continued shrinking of device dimensions and device interconnections. In recent years, a three-dimensional integrated circuit (3D IC) has become a solution to minimize the interconnect delay instead of the conventional method, and the 3D IC improves the rc delay by implementing the interconnection of different functional blocks through vertical interconnect wiring between adjacent stacked layers, while the reduction in the length of the interconnect lines leads to a smaller overall size and a higher packaging density, and also can provide more functions in a smaller footprint.
Copper is a standard CMOS compatible material with good electrical and thermal conductivity, electromigration resistance and robust mechanical strength. Thus, among the numerous bonding techniques, copper-copper thermocompression bonding is also the preferred 3D integration technique. The plug-in low-temperature bonding technology is a common copper-copper low-temperature hot-pressing bonding technology, one key link of the technology is to use a chemical plating method to prepare a copper cone array from the bottom surface to the top point of the cone, and the preparation process is very complex because the preparation process needs to be carried out at a specific pH value and temperature.
Disclosure of Invention
The application aims to provide an insertion type hot-press bonding method so as to simplify the existing insertion type hot-press bonding method.
In order to solve the above technical problem, the present application provides an insertion type thermal compression bonding method, including:
forming a copper cone on a first surface of a copper substrate, wherein the copper cone is formed in a direction from a vertex of the copper cone to a bottom surface of the copper cone to obtain a pretreated copper substrate, and the first surface is an upper surface or a lower surface of the copper substrate;
and carrying out hot-pressing bonding on the device by utilizing the pretreated copper substrate.
Optionally, the forming a copper cone on the first surface of the copper substrate includes:
and forming a copper cone array on the first surface of the copper substrate.
Optionally, the forming a copper cone on the first surface of the copper substrate includes, according to a direction from a vertex of the copper cone to the bottom surface:
and pressing the substrate with the cone on the surface and the first surface of the copper substrate.
Optionally, the forming of the copper cone on the first surface of the copper substrate includes, according to a direction from a vertex of the copper cone to a bottom surface:
and etching the first surface of the copper substrate by using an etching method to obtain the copper cone.
Optionally, before forming the copper cone on the first surface of the copper substrate, the method further includes:
and cleaning the copper substrate.
Optionally, the thickness of the substrate ranges from 100 micrometers.
Optionally, the mohs hardness of the substrate is above 7.
Optionally, the substrate is a ceramic substrate.
Optionally, after the obtaining of the pretreated copper substrate, the method further includes:
and cleaning the pretreated copper substrate.
Optionally, the thickness of the copper substrate ranges from 10 micrometers to 300 micrometers, inclusive.
According to the plug-in hot-press bonding method provided by the application, a copper cone is formed on the first surface of a copper substrate and formed in the direction from the vertex of the copper cone to the bottom surface of the copper cone, so that a pretreated copper substrate is obtained, wherein the first surface is the upper surface or the lower surface of the copper substrate; and carrying out hot-pressing bonding on the device by utilizing the pretreated copper substrate. When a copper cone is formed on the first surface of the copper substrate, the copper cone is formed according to the direction from the top point to the bottom surface of the copper cone, so that a pretreated copper substrate with the copper cone on the first surface is obtained, then the pretreated copper substrate is utilized to press a device, a chemical plating method is avoided, the copper cone is prepared on the surface of the copper substrate according to the direction from the bottom surface to the top point of the cone, no specific requirements on pH value and temperature are met, the preparation process of the copper cone is simplified, and therefore the plug-in hot-press bonding method is simplified.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of an insertion thermal compression bonding method according to an embodiment of the present disclosure;
FIG. 2 is another flow chart of an insert thermal compression bonding method provided in an embodiment of the present application;
FIG. 3 is another flow chart of an insert thermal compression bonding method provided in an embodiment of the present application;
fig. 4 is another flowchart of an insertion thermal compression bonding method according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
The basic mechanism of bond formation in copper-copper hot-press bonding is interdiffusion and grain growth of copper atoms at the bonding interface under the conditions of applied temperature and pressure. The bonding pressure is increased, so that the contact area between the surfaces of the two copper layers is increased, the contact probability between interface atoms is greatly increased, and the atoms are easier to diffuse; as the bonding temperature rises, interface atoms obtain more energy, mutual diffusion is obviously enhanced, meanwhile, the temperature rise also promotes the growth of crystal grains, the crystal grains obtaining the energy can realize the cross-interface growth, the interface is effectively eliminated, and the copper layer is fused into a whole. The existing copper-copper low-temperature hot-pressing bonding technology mainly comprises a technology for improving the surface activity of a bonding piece, including Surface Activation Bonding (SAB), self-assembled monolayer bonding (SAM), Ultrasonic Bonding (UB), copper-copper bonding with Ti as a passivation layer, a nano hot-pressing bonding technology and an insertion type low-temperature bonding technology.
As described in the background section, at present, an electroless plating method is used to fabricate a copper cone array on the surface of a copper substrate in a direction from the base to the apex of the cone, and the fabrication process is very complicated because it needs to be performed at a specific pH and temperature.
In view of the above, the present application provides an insertion thermal compression bonding method, please refer to fig. 1, where fig. 1 is a flowchart of an insertion thermal compression bonding method according to an embodiment of the present application, and the method includes:
step S101: and forming a copper cone on the first surface of the copper substrate, wherein the copper cone is formed in the direction from the vertex of the copper cone to the bottom surface of the copper cone, so as to obtain the pretreated copper substrate, and the first surface is the upper surface or the lower surface of the copper substrate.
It should be noted that, in the embodiment, the number of the copper cones on the first surface of the copper substrate is not particularly limited, and may be determined as the case may be. Further, the size of the copper cone is in the micron order.
In the present embodiment, the method of forming the copper cone on the first surface of the copper substrate is not particularly limited as long as the method is formed in a direction from the apex to the bottom surface of the copper cone.
Step S102: and carrying out hot-pressing bonding on the device by utilizing the pretreated copper substrate.
Specifically, a pre-processed copper substrate is placed into bonding equipment and fixed onto a hot plate, a copper cone is coated with solder, a prepared power device is placed on the pre-processed copper substrate coated with the solder, then the copper cone is tightly embedded into the solder by pressurization, and due to micron-sized size of the copper cone, mechanical interlocking effect and rapid solid diffusion at an interface, a bonding process can be realized at a low temperature. Wherein, the bonding pressurization process can be performed in accordance with a certain bonding temperature (160-.
In the insertion type thermal compression bonding method provided by this embodiment, a copper cone is formed on a first surface of a copper substrate, and the copper cone is formed in a direction from a vertex of the copper cone to a bottom surface of the copper cone, so as to obtain a pretreated copper substrate, where the first surface is an upper surface or a lower surface of the copper substrate; and carrying out hot-pressing bonding on the device by utilizing the pretreated copper substrate. In this embodiment, when the copper cone is formed on the first surface of the copper substrate, the copper cone is formed in a direction from the vertex to the bottom surface of the copper cone, so as to obtain a pretreated copper substrate having the copper cone on the first surface, and then the pretreated copper substrate is used to press the device, so that the use of a chemical plating method is avoided, the copper cone is prepared on the surface of the copper substrate in a direction from the bottom surface to the vertex of the cone, no specific requirements are imposed on the pH value and the temperature, the preparation process of the copper cone is simplified, and the insertion type thermal compression bonding method is simplified.
On the basis of the above embodiments, in an embodiment of the present application, the forming a copper cone on the first surface of the copper substrate includes:
and forming a copper cone array on the first surface of the copper substrate, and when the obtained pretreated copper substrate is used for carrying out hot-pressing bonding on a device, the bonding of the device is firmer.
Referring to fig. 2, fig. 2 is another flow chart of an insertion thermal compression bonding method according to an embodiment of the present application, the method including:
step S201: and cleaning the copper substrate.
Step S202: and forming a copper cone on the first surface of the copper substrate, wherein the copper cone is formed in the direction from the vertex of the copper cone to the bottom surface of the copper cone, so as to obtain the pretreated copper substrate, and the first surface is the upper surface or the lower surface of the copper substrate.
Step S203: and carrying out hot-pressing bonding on the device by utilizing the pretreated copper substrate.
For the specific implementation process of step S202 and step S203, reference may be made to the content of the foregoing embodiment, and details are not repeated herein.
Referring to fig. 3, fig. 3 is another flowchart of an interposer thermocompression bonding method according to an embodiment of the present application, the method including:
step S301: and pressing the substrate with the cone on the surface and a first surface of the copper substrate to obtain the pretreated copper substrate, wherein the first surface is the upper surface or the lower surface of the copper substrate.
Specifically, a copper substrate is fixed on a bottom plate, then the substrate with the cone on the surface is pressed with the first surface of the copper substrate, then the substrate with the cone on the surface is slowly lifted, and the copper cone matched with the cone on the surface of the substrate is formed on the upper surface of the copper substrate, so that the pretreated copper substrate is obtained. Or fixing the substrate with the cone on the surface on a bottom plate, pressing the copper substrate and the substrate with the cone on the surface upwards, slowly lifting the copper substrate, and forming the copper cone matched with the cone on the surface of the substrate on the lower surface of the copper substrate to obtain the pretreated copper substrate. The method for fixing the copper substrate or the substrate having a cone on the surface to the base plate is not particularly limited.
The method for laminating the substrate with the cone on the surface and the first surface of the copper substrate to obtain the pretreated copper substrate can control the size of the copper cone between several microns and hundreds of microns by optimizing the size of the cone on the substrate, is easier to control the size of the copper cone compared with a chemical plating method, has simple process and easy operation, can reuse the substrate, and saves the cost.
In the present embodiment, the method of manufacturing the substrate so that the surface thereof has the cone shape is not limited, and can be set by itself.
Specifically, the method for manufacturing the substrate with the cone on the surface may be that the flat substrate is fixed, the method for fixing is not limited, and then the substrate is etched by the etching technique to obtain the substrate with the cone on the surface.
It should be noted that, in this embodiment, the thickness of the substrate is not specifically limited, as long as the thickness range of the substrate is over 100 micrometers, and the thickness of the substrate is over 100 micrometers, which is beneficial to balancing stress and reducing the maximum normal stress, and meanwhile, improves the stability and reliability of the substrate.
In the present embodiment, the material of the substrate is not particularly limited, and the mohs hardness of the substrate is more than 7, so as to prolong the service life of the substrate and reduce the cost.
Specifically, in an embodiment of the present application, the substrate is a ceramic substrate, but the present application is not limited to this, and in another embodiment of the present application, the substrate is silicon carbide.
Step S302: and carrying out hot-pressing bonding on the device by utilizing the pretreated copper substrate.
For the specific implementation process of the step S302, reference may be made to the contents of the foregoing embodiments, and details are not repeated herein.
Referring to fig. 4, fig. 4 is another flowchart of an insertion thermal compression bonding method according to an embodiment of the present application, where the method includes:
step S401: and etching the first surface of the copper substrate by using an etching method to obtain the copper cone so as to obtain the pretreated copper substrate, wherein the first surface is the upper surface or the lower surface of the copper substrate.
Specifically, the copper substrate may be fixed on the upper surface of a bottom plate, and then the upper surface of the copper substrate is etched to obtain the copper cone, thereby obtaining the pretreated copper substrate. The fixing method is not particularly limited.
In this embodiment, the specific etching method is not limited, and may be selected by itself. Such as chemical confinement etching, ultraviolet laser etching, ceramic cutting, mask hydrogen gas etching, and the like.
It is noted that the size of the copper cones formed by the etching process depends on the particular etching process. The size of the copper cone can be controlled between several micrometers and hundreds of micrometers by optimizing the etching process parameters, the size of the copper cone is easier to control compared with a chemical plating method, and the process of forming the copper cone by the etching method is simple and easy to operate.
Step S402: and carrying out hot-pressing bonding on the device by utilizing the pretreated copper substrate.
For the specific implementation process of the step S402, reference may be made to the contents of the foregoing embodiments, and details are not repeated herein.
On the basis of the foregoing embodiment, in an embodiment of the present application, after obtaining the pretreated copper substrate, the method further includes:
and cleaning the pretreated copper substrate to wash away residual liquid of the etching liquid on the pretreated copper substrate.
In any of the above embodiments, the thickness of the copper substrate ranges from 10 micrometers to 300 micrometers, inclusive, to facilitate heat dissipation of the copper substrate during thermocompression bonding.
The insertion thermal compression bonding method of the present application is further described below in a specific case.
After a flat ceramic substrate with the thickness of more than 100 microns is fixed, a cone array is etched on the upper surface of the flat ceramic substrate through an etching processing technology.
And cleaning the prepared copper substrate with the thickness within the range of 10-300 microns, fixing the copper substrate on a bottom plate, and laminating the ceramic substrate with the conical array and the cleaned copper substrate.
Slowly lifting the ceramic substrate with the conical array, and forming the conical array matched with the ceramic substrate on the surface of the copper substrate to obtain the pretreated copper substrate.
The method comprises the steps of placing a pretreated copper substrate into bonding equipment and fixing the pretreated copper substrate on a hot plate, coating solder on a copper cone array of the pretreated copper substrate, placing a prepared power device on the pretreated copper substrate coated with the solder, and pressurizing to enable a copper cone to be tightly embedded into the solder. Wherein, the bonding pressurization process can be performed in accordance with a certain bonding temperature (160-.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The insert thermal compression bonding method provided in the present application is described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (8)
1. An insertion thermal compression bonding method, comprising:
forming a copper cone on a first surface of a copper substrate, wherein the copper cone is formed in a direction from a vertex of the copper cone to a bottom surface of the copper cone to obtain a pretreated copper substrate, and the first surface is an upper surface or a lower surface of the copper substrate;
carrying out thermocompression bonding on a device by utilizing the pretreated copper substrate;
the copper cone is formed on the first surface of the copper substrate and comprises the following parts in the direction from the top to the bottom of the copper cone:
and pressing the substrate with the cone on the surface and the first surface of the copper substrate.
2. The interposer thermocompression bonding method of claim 1, wherein the forming of the copper cone on the first surface of the copper substrate comprises:
and forming a copper cone array on the first surface of the copper substrate.
3. The interposer thermocompression bonding method of claim 1, further comprising, before the forming the copper cone on the first surface of the copper substrate:
and cleaning the copper substrate.
4. The interposer thermal bonding method of claim 1, wherein the thickness of the substrate ranges from 100 microns or more.
5. The interposer thermocompression bonding method of claim 1, wherein the substrate has a mohs hardness of 7 or more.
6. The interposer thermocompression bonding method of claim 5, wherein the substrate is a ceramic substrate.
7. The interposer thermocompression bonding method of claim 1, further comprising, after the obtaining the pre-processed copper substrate:
and cleaning the pretreated copper substrate.
8. The interposer thermocompression bonding method of claim 1, wherein the thickness of the copper substrate ranges from 10 microns to 300 microns, inclusive.
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| CN201910124164.8A CN111584378B (en) | 2019-02-19 | 2019-02-19 | Plug-in type hot-press bonding method |
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| WO2014136241A1 (en) * | 2013-03-07 | 2014-09-12 | 東北マイクロテック株式会社 | Laminate and method of producing same |
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| CN103928300A (en) * | 2014-04-14 | 2014-07-16 | 河南省科学院应用物理研究所有限公司 | Bonding method based on multi-field coupling |
| CN104112684A (en) * | 2014-07-03 | 2014-10-22 | 上海交通大学 | Solid ultrasonic bonding method based on nickel micro cones |
| CN104201123A (en) * | 2014-08-15 | 2014-12-10 | 上海交通大学 | Low temperature solid state bonding method through surface micro-nano structure |
| CN109346401A (en) * | 2018-10-18 | 2019-02-15 | 苏州美图半导体技术有限公司 | Improve Jin-gold thermocompression bonding intensity method in silicon face nanoforest |
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