CN109326513A - 一种超薄氮化硅微栅芯片的制作方法 - Google Patents
一种超薄氮化硅微栅芯片的制作方法 Download PDFInfo
- Publication number
- CN109326513A CN109326513A CN201811067099.1A CN201811067099A CN109326513A CN 109326513 A CN109326513 A CN 109326513A CN 201811067099 A CN201811067099 A CN 201811067099A CN 109326513 A CN109326513 A CN 109326513A
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- ultra
- chip
- production method
- thin silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 238000001039 wet etching Methods 0.000 claims abstract description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000001020 plasma etching Methods 0.000 claims abstract description 8
- 238000001459 lithography Methods 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 2
- 239000003643 water by type Substances 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 abstract description 7
- 239000007787 solid Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000012459 cleaning agent Substances 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Sampling And Sample Adjustment (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811067099.1A CN109326513A (zh) | 2018-09-13 | 2018-09-13 | 一种超薄氮化硅微栅芯片的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811067099.1A CN109326513A (zh) | 2018-09-13 | 2018-09-13 | 一种超薄氮化硅微栅芯片的制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109326513A true CN109326513A (zh) | 2019-02-12 |
Family
ID=65265808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201811067099.1A Pending CN109326513A (zh) | 2018-09-13 | 2018-09-13 | 一种超薄氮化硅微栅芯片的制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN109326513A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109865541A (zh) * | 2019-03-12 | 2019-06-11 | 厦门大学 | 一种扫描电镜原位电化学检测芯片及其制作方法 |
CN110501365A (zh) * | 2019-03-12 | 2019-11-26 | 厦门超新芯科技有限公司 | 一种原位加热芯片及其制作方法 |
CN110514677A (zh) * | 2019-03-12 | 2019-11-29 | 厦门超新芯科技有限公司 | 一种原位液体池芯片及其制作方法 |
WO2022041597A1 (zh) * | 2020-08-26 | 2022-03-03 | 厦门大学 | 一种透射电镜高分辨原位流体扰流加热芯片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100143198A1 (en) * | 2006-11-16 | 2010-06-10 | Protochips, Inc. | Sample support structure and methods |
CN101794694A (zh) * | 2010-02-09 | 2010-08-04 | 中国科学院物理研究所 | 新型tem样品支持膜(氮化硅窗口)的制作工艺 |
CN105136822A (zh) * | 2015-08-06 | 2015-12-09 | 南京大学 | 一种纳米材料透射电镜原位测试芯片、芯片制备方法及其应用 |
CN105977122A (zh) * | 2016-07-20 | 2016-09-28 | 中国科学院物理研究所 | 多孔氮化硅支撑膜窗格的制备 |
CN107525816A (zh) * | 2017-09-30 | 2017-12-29 | 南通盟维芯片科技有限公司 | 具有超薄氮化硅观察窗口的tem液体测试芯片及其制法 |
-
2018
- 2018-09-13 CN CN201811067099.1A patent/CN109326513A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100143198A1 (en) * | 2006-11-16 | 2010-06-10 | Protochips, Inc. | Sample support structure and methods |
CN101794694A (zh) * | 2010-02-09 | 2010-08-04 | 中国科学院物理研究所 | 新型tem样品支持膜(氮化硅窗口)的制作工艺 |
CN105136822A (zh) * | 2015-08-06 | 2015-12-09 | 南京大学 | 一种纳米材料透射电镜原位测试芯片、芯片制备方法及其应用 |
CN105977122A (zh) * | 2016-07-20 | 2016-09-28 | 中国科学院物理研究所 | 多孔氮化硅支撑膜窗格的制备 |
CN107525816A (zh) * | 2017-09-30 | 2017-12-29 | 南通盟维芯片科技有限公司 | 具有超薄氮化硅观察窗口的tem液体测试芯片及其制法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109865541A (zh) * | 2019-03-12 | 2019-06-11 | 厦门大学 | 一种扫描电镜原位电化学检测芯片及其制作方法 |
CN110501365A (zh) * | 2019-03-12 | 2019-11-26 | 厦门超新芯科技有限公司 | 一种原位加热芯片及其制作方法 |
CN110514677A (zh) * | 2019-03-12 | 2019-11-29 | 厦门超新芯科技有限公司 | 一种原位液体池芯片及其制作方法 |
CN109865541B (zh) * | 2019-03-12 | 2020-07-03 | 厦门大学 | 一种扫描电镜原位电化学检测芯片及其制作方法 |
WO2022041597A1 (zh) * | 2020-08-26 | 2022-03-03 | 厦门大学 | 一种透射电镜高分辨原位流体扰流加热芯片 |
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PB01 | Publication | ||
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200804 Address after: 361000 Xiamen City, Fujian Province, Xiamen Torch High-tech Zone Software Park Innovation Building Area A 801 Applicant after: Xiamen Super New Core Technology Co.,Ltd. Address before: 361021 Unit No. 8 1401 Chengyi North Street, Xiamen Software Park Phase III, Fujian Province Applicant before: XIAMEN CHIP SUPERB TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20220415 Address after: 361000 3f-a328, Zone C, innovation building, software park, Xiamen Torch High tech Zone, Xiamen, Fujian Applicant after: XIAMEN CHIP SUPERB TECHNOLOGY Co.,Ltd. Address before: 361000 Xiamen City, Fujian Province, Xiamen Torch High-tech Zone Software Park Innovation Building Area A 801 Applicant before: Xiamen Super New Core Technology Co.,Ltd. |
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WD01 | Invention patent application deemed withdrawn after publication | ||
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Application publication date: 20190212 |