CN109314173A - 柔性热电模块 - Google Patents

柔性热电模块 Download PDF

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Publication number
CN109314173A
CN109314173A CN201780038160.7A CN201780038160A CN109314173A CN 109314173 A CN109314173 A CN 109314173A CN 201780038160 A CN201780038160 A CN 201780038160A CN 109314173 A CN109314173 A CN 109314173A
Authority
CN
China
Prior art keywords
electrothermal module
project
hole
thermoelectric element
flexible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780038160.7A
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English (en)
Chinese (zh)
Inventor
李在容
罗杰·W·巴顿
埃米莉·L·鲍恩
多纳托·G·凯瑞格
加雷思·A·休斯
拉维·帕拉尼斯瓦米
詹姆斯·F·波奇
迈克尔·W·多尔扎尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN109314173A publication Critical patent/CN109314173A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/82—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structure Of Printed Boards (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
CN201780038160.7A 2016-06-23 2017-06-13 柔性热电模块 Pending CN109314173A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662353741P 2016-06-23 2016-06-23
US62/353,741 2016-06-23
PCT/US2017/037117 WO2017222862A1 (en) 2016-06-23 2017-06-13 Flexible thermoelectric module

Publications (1)

Publication Number Publication Date
CN109314173A true CN109314173A (zh) 2019-02-05

Family

ID=59091662

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780038160.7A Pending CN109314173A (zh) 2016-06-23 2017-06-13 柔性热电模块

Country Status (6)

Country Link
US (1) US20190181323A1 (https=)
EP (1) EP3475989B1 (https=)
JP (1) JP2019525455A (https=)
KR (1) KR20190022650A (https=)
CN (1) CN109314173A (https=)
WO (1) WO2017222862A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853492A (zh) * 2019-11-27 2021-05-28 中国科学院金属研究所 一种SnSe／CNT高温柔性热电薄膜材料及其制备方法
CN113203348A (zh) * 2021-04-30 2021-08-03 中国科学院物理研究所 一种纤维型热电模块多区域识别器及其制备方法
CN116429276A (zh) * 2023-04-06 2023-07-14 武汉理工大学 一种取能测温一体化可塑型温度传感器及其制备和温度传感方法

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US20210249580A1 (en) * 2015-05-14 2021-08-12 Sridhar Kasichainula Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of n-type and p-type thermoelectric legs
US20210249579A1 (en) * 2015-05-14 2021-08-12 Sridhar Kasichainula Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of n-type and p-type thermoelectric legs
EP3602642A4 (en) 2017-03-31 2020-12-23 3M Innovative Properties Company ELECTRONIC DEVICES INCLUDING SOLID SEMICONDUCTOR CHIPS
CN110573230B (zh) 2017-04-28 2022-09-06 3M创新有限公司 基于热电装置的空气过滤监测
US11640013B2 (en) * 2017-10-13 2023-05-02 University Of Utah Research Foundation Weather-detecting devices and related methods
US11450797B2 (en) 2017-12-08 2022-09-20 3M Innovative Properties Company Differential thermoelectric device
NL2020206B1 (nl) * 2017-12-29 2019-07-08 Arcadis Nederland B V Thermo-elektrisch element en werkwijze voor het vervaardigen daarvan
JP7627034B2 (ja) * 2021-06-23 2025-02-05 国立研究開発法人物質・材料研究機構 平面型熱電変換素子、および、その製造方法
CN114220908A (zh) * 2021-11-16 2022-03-22 东莞先导先进科技有限公司 一种柔性热电制冷器的制备工艺、电子设备
WO2024057344A2 (en) * 2022-09-13 2024-03-21 Fallahshayan Masood Advanced ultra-low-power ecg patch integrating self-power generation with artificial intelligence cloud platform
US12540855B2 (en) * 2023-08-07 2026-02-03 City University Of Hong Kong Wide-band photodetectors using thermoelectric materials

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US6127619A (en) * 1998-06-08 2000-10-03 Ormet Corporation Process for producing high performance thermoelectric modules
CN101632182A (zh) * 2007-03-13 2010-01-20 住友化学株式会社 用于热电转换模块的基板及热电转换模块
CN102473833A (zh) * 2009-08-06 2012-05-23 莱尔德技术股份有限公司 热电模块、热电组件和所涉及的方法

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JP4200256B2 (ja) * 1999-08-10 2008-12-24 パナソニック電工株式会社 熱電変換モジュール
US6611046B2 (en) 2001-06-05 2003-08-26 3M Innovative Properties Company Flexible polyimide circuits having predetermined via angles
US7012017B2 (en) 2004-01-29 2006-03-14 3M Innovative Properties Company Partially etched dielectric film with conductive features
JP2005217353A (ja) * 2004-02-02 2005-08-11 Yokohama Teikoki Kk 熱電半導体素子、熱電変換モジュールおよびその製造方法
JP2005353710A (ja) * 2004-06-09 2005-12-22 Suzuki Sogyo Co Ltd 熱電素子モジュール及びその製法
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US20100154855A1 (en) * 2008-12-18 2010-06-24 David Nemir Thin walled thermoelectric devices and methods for production thereof
KR20130143067A (ko) 2010-11-03 2013-12-30 쓰리엠 이노베이티브 프로퍼티즈 컴파니 가요성 led 디바이스 및 제조 방법
US20130218241A1 (en) * 2012-02-16 2013-08-22 Nanohmics, Inc. Membrane-Supported, Thermoelectric Compositions
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JP5984748B2 (ja) * 2013-07-01 2016-09-06 富士フイルム株式会社 熱電変換素子および熱電変換モジュール
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US20160163949A1 (en) * 2014-12-03 2016-06-09 Perpetua Power Source Technologies Flexible thermoelectric generator

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Publication number Priority date Publication date Assignee Title
US6127619A (en) * 1998-06-08 2000-10-03 Ormet Corporation Process for producing high performance thermoelectric modules
CN101632182A (zh) * 2007-03-13 2010-01-20 住友化学株式会社 用于热电转换模块的基板及热电转换模块
CN102473833A (zh) * 2009-08-06 2012-05-23 莱尔德技术股份有限公司 热电模块、热电组件和所涉及的方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853492A (zh) * 2019-11-27 2021-05-28 中国科学院金属研究所 一种SnSe／CNT高温柔性热电薄膜材料及其制备方法
CN113203348A (zh) * 2021-04-30 2021-08-03 中国科学院物理研究所 一种纤维型热电模块多区域识别器及其制备方法
CN113203348B (zh) * 2021-04-30 2022-07-12 中国科学院物理研究所 一种纤维型热电模块多区域识别器及其制备方法
CN116429276A (zh) * 2023-04-06 2023-07-14 武汉理工大学 一种取能测温一体化可塑型温度传感器及其制备和温度传感方法

Also Published As

Publication number Publication date
US20190181323A1 (en) 2019-06-13
KR20190022650A (ko) 2019-03-06
JP2019525455A (ja) 2019-09-05
EP3475989A1 (en) 2019-05-01
WO2017222862A1 (en) 2017-12-28
EP3475989B1 (en) 2021-03-17

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