CN109301090B - Oled面板的制作方法、临时配对结构 - Google Patents
Oled面板的制作方法、临时配对结构 Download PDFInfo
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- CN109301090B CN109301090B CN201710610839.0A CN201710610839A CN109301090B CN 109301090 B CN109301090 B CN 109301090B CN 201710610839 A CN201710610839 A CN 201710610839A CN 109301090 B CN109301090 B CN 109301090B
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- shadow mask
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 283
- 238000001704 evaporation Methods 0.000 claims abstract description 126
- 230000008020 evaporation Effects 0.000 claims abstract description 126
- 239000003292 glue Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims description 68
- 239000000463 material Substances 0.000 claims description 64
- 230000008569 process Effects 0.000 claims description 48
- 239000011521 glass Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000013011 mating Effects 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 63
- 239000010408 film Substances 0.000 description 57
- 238000004140 cleaning Methods 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 230000008093 supporting effect Effects 0.000 description 5
- 238000004026 adhesive bonding Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (25)
Priority Applications (1)
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CN201710610839.0A CN109301090B (zh) | 2017-07-25 | 2017-07-25 | Oled面板的制作方法、临时配对结构 |
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CN201710610839.0A CN109301090B (zh) | 2017-07-25 | 2017-07-25 | Oled面板的制作方法、临时配对结构 |
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CN109301090A CN109301090A (zh) | 2019-02-01 |
CN109301090B true CN109301090B (zh) | 2021-02-09 |
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CN111446194B (zh) * | 2020-03-05 | 2023-08-01 | 绍兴同芯成集成电路有限公司 | 一种用于晶圆加工的玻璃载板 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1522098A (zh) * | 2002-12-03 | 2004-08-18 | 精工爱普生株式会社 | 掩模蒸镀方法及装置、掩模及其制造方法、显示板制造装置 |
CN103864009A (zh) * | 2014-03-11 | 2014-06-18 | 中国电子科技集团公司第五十五研究所 | 利用介质膜掩膜板实现具有斜坡状边缘金属薄膜图形方法 |
CN105518877A (zh) * | 2015-08-18 | 2016-04-20 | 歌尔声学股份有限公司 | 微发光二极管的预排除方法、制造方法、装置和电子设备 |
CN105552017A (zh) * | 2015-12-28 | 2016-05-04 | 深圳先进技术研究院 | 一种用于临时键合的载片结构、键合及解键合方法 |
CN105633301A (zh) * | 2014-11-17 | 2016-06-01 | 上海和辉光电有限公司 | 一种降低oled混色缺陷的方法及oled显示面板 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003077940A (ja) * | 2001-09-06 | 2003-03-14 | Sony Corp | 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
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- 2017-07-25 CN CN201710610839.0A patent/CN109301090B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1522098A (zh) * | 2002-12-03 | 2004-08-18 | 精工爱普生株式会社 | 掩模蒸镀方法及装置、掩模及其制造方法、显示板制造装置 |
CN103864009A (zh) * | 2014-03-11 | 2014-06-18 | 中国电子科技集团公司第五十五研究所 | 利用介质膜掩膜板实现具有斜坡状边缘金属薄膜图形方法 |
CN105633301A (zh) * | 2014-11-17 | 2016-06-01 | 上海和辉光电有限公司 | 一种降低oled混色缺陷的方法及oled显示面板 |
CN105518877A (zh) * | 2015-08-18 | 2016-04-20 | 歌尔声学股份有限公司 | 微发光二极管的预排除方法、制造方法、装置和电子设备 |
CN105552017A (zh) * | 2015-12-28 | 2016-05-04 | 深圳先进技术研究院 | 一种用于临时键合的载片结构、键合及解键合方法 |
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Effective date of registration: 20191021 Address after: 201206 Shanghai, Pudong New Area, China (Shanghai) free trade zone, new Jinqiao Road, No. 13, building 2, floor 27 Applicant after: Shanghai Shiou Photoelectric Technology Co.,Ltd. Address before: 201206 6 building, 45 Jinhai Road, Pudong New Area, Shanghai, 1000 Applicant before: SEEYA INFORMATION TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20200901 Address after: 230012 room a5-103, No.999, Wenzhong Road, Xinzhan District, Hefei City, Anhui Province Applicant after: Hefei Shiya Technology Co.,Ltd. Address before: 201206 Shanghai, Pudong New Area, China (Shanghai) free trade zone, new Jinqiao Road, No. 13, building 2, floor 27 Applicant before: Shanghai Shiou Photoelectric Technology Co.,Ltd. |
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Address after: Room a5-103, No.999, Wenzhong Road, Xinzhan District, Hefei City, Anhui Province, 230012 Patentee after: Vision Technology Co.,Ltd. Address before: Room a5-103, No.999, Wenzhong Road, Xinzhan District, Hefei City, Anhui Province, 230012 Patentee before: Hefei Shiya Technology Co.,Ltd. |
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