CN109285945A - 基于二维铁电半导体的非易失存储器及其制备方法 - Google Patents
基于二维铁电半导体的非易失存储器及其制备方法 Download PDFInfo
- Publication number
- CN109285945A CN109285945A CN201810977621.3A CN201810977621A CN109285945A CN 109285945 A CN109285945 A CN 109285945A CN 201810977621 A CN201810977621 A CN 201810977621A CN 109285945 A CN109285945 A CN 109285945A
- Authority
- CN
- China
- Prior art keywords
- nonvolatile storage
- layer
- dimentional
- substrate
- prepared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000003860 storage Methods 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 77
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 11
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 5
- 239000004417 polycarbonate Substances 0.000 claims description 5
- -1 polyethylene naphthalate Polymers 0.000 claims description 5
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 5
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 4
- KVXHGSVIPDOLBC-UHFFFAOYSA-N selanylidenetungsten Chemical class [Se].[W] KVXHGSVIPDOLBC-UHFFFAOYSA-N 0.000 claims description 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- LYZMBUYUNBCSMW-UHFFFAOYSA-N selenium(2-);tin(2+) Chemical compound [Se-2].[Sn+2] LYZMBUYUNBCSMW-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 229920001596 poly (chlorostyrenes) Polymers 0.000 claims 1
- 230000015654 memory Effects 0.000 abstract description 16
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 230000005641 tunneling Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 43
- 238000000034 method Methods 0.000 description 22
- 230000005621 ferroelectricity Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 8
- 239000004926 polymethyl methacrylate Substances 0.000 description 8
- 230000010287 polarization Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 description 5
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 5
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 5
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 235000013339 cereals Nutrition 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004800 polyvinyl chloride Substances 0.000 description 4
- 229920000915 polyvinyl chloride Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 239000003708 ampul Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- SDDGNMXIOGQCCH-UHFFFAOYSA-N 3-fluoro-n,n-dimethylaniline Chemical compound CN(C)C1=CC=CC(F)=C1 SDDGNMXIOGQCCH-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000009647 facial growth Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810977621.3A CN109285945B (zh) | 2018-08-24 | 2018-08-24 | 基于二维铁电半导体的非易失存储器及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810977621.3A CN109285945B (zh) | 2018-08-24 | 2018-08-24 | 基于二维铁电半导体的非易失存储器及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109285945A true CN109285945A (zh) | 2019-01-29 |
CN109285945B CN109285945B (zh) | 2021-01-29 |
Family
ID=65183585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810977621.3A Active CN109285945B (zh) | 2018-08-24 | 2018-08-24 | 基于二维铁电半导体的非易失存储器及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109285945B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109950364A (zh) * | 2019-04-02 | 2019-06-28 | 中国科学院半导体研究所 | 基于二维硒化亚锗光电探测器的成像元件制备方法 |
WO2020050778A1 (en) * | 2018-09-06 | 2020-03-12 | National University Of Singapore | A continuous thin film of a metal chalcogenide |
CN111799342A (zh) * | 2020-07-22 | 2020-10-20 | 深圳大学 | 一种基于硒化亚锡/硒化铟异质结的光电探测器及其制备方法 |
CN112071939A (zh) * | 2020-07-31 | 2020-12-11 | 西安交通大学 | 一种基于铁电半导体和薄层二维材料的光电探测器 |
CN114388620A (zh) * | 2022-01-14 | 2022-04-22 | 北京科技大学 | 一种基于α-硒化铟纳米片的二维范德华铁电隧穿结存储器及其构筑方法和应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130256629A1 (en) * | 2012-04-03 | 2013-10-03 | Samsung Electronics Co., Ltd. | Graphene semiconductor device, manufacturing method thereof, organic light emitting display, and memory including graphene semiconductor device |
CN105280813A (zh) * | 2014-07-18 | 2016-01-27 | 三星电子株式会社 | 石墨烯器件及其制造和操作方法以及电子装置 |
CN106206710A (zh) * | 2016-07-15 | 2016-12-07 | 广东工业大学 | 一种二维材料异质结场效应晶体管、其制备方法和晶体管阵列器件 |
-
2018
- 2018-08-24 CN CN201810977621.3A patent/CN109285945B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130256629A1 (en) * | 2012-04-03 | 2013-10-03 | Samsung Electronics Co., Ltd. | Graphene semiconductor device, manufacturing method thereof, organic light emitting display, and memory including graphene semiconductor device |
CN105280813A (zh) * | 2014-07-18 | 2016-01-27 | 三星电子株式会社 | 石墨烯器件及其制造和操作方法以及电子装置 |
CN106206710A (zh) * | 2016-07-15 | 2016-12-07 | 广东工业大学 | 一种二维材料异质结场效应晶体管、其制备方法和晶体管阵列器件 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020050778A1 (en) * | 2018-09-06 | 2020-03-12 | National University Of Singapore | A continuous thin film of a metal chalcogenide |
US11804253B2 (en) | 2018-09-06 | 2023-10-31 | National University Of Singapore | Continuous thin film of a metal chalcogenide |
CN109950364A (zh) * | 2019-04-02 | 2019-06-28 | 中国科学院半导体研究所 | 基于二维硒化亚锗光电探测器的成像元件制备方法 |
CN109950364B (zh) * | 2019-04-02 | 2021-07-27 | 中国科学院半导体研究所 | 基于二维硒化亚锗光电探测器的成像元件制备方法 |
CN111799342A (zh) * | 2020-07-22 | 2020-10-20 | 深圳大学 | 一种基于硒化亚锡/硒化铟异质结的光电探测器及其制备方法 |
CN112071939A (zh) * | 2020-07-31 | 2020-12-11 | 西安交通大学 | 一种基于铁电半导体和薄层二维材料的光电探测器 |
CN114388620A (zh) * | 2022-01-14 | 2022-04-22 | 北京科技大学 | 一种基于α-硒化铟纳米片的二维范德华铁电隧穿结存储器及其构筑方法和应用 |
CN114388620B (zh) * | 2022-01-14 | 2022-08-23 | 北京科技大学 | 一种基于α-硒化铟纳米片的二维范德华铁电隧穿结存储器的构筑方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109285945B (zh) | 2021-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109285945A (zh) | 基于二维铁电半导体的非易失存储器及其制备方法 | |
Le et al. | Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor | |
Lu et al. | Freestanding oxide ferroelectric tunnel junction memories transferred onto silicon | |
Yang et al. | A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory | |
Ding et al. | Configurable multi-state non-volatile memory behaviors in Ti 3 C 2 nanosheets | |
Huangfu et al. | Visible or near-infrared light self-powered photodetectors based on transparent ferroelectric ceramics | |
US9349802B2 (en) | Memory devices including two-dimensional material, methods of manufacturing the same, and methods of operating the same | |
Singh et al. | Large-area crystalline BaSnO3 membranes with high electron mobilities | |
Zhang et al. | Flexible Metal–Insulator Transitions Based on van der Waals Oxide Heterostructures | |
CN110943128B (zh) | 二维mosfet/mfis多功能开关存储器件及其制备方法 | |
Tsai et al. | Oxide heteroepitaxy-based flexible ferroelectric transistor | |
WO2020147584A1 (zh) | 一种具有多值存储能力的各向异性浮栅存储器 | |
KR20180081338A (ko) | 플렉시블 투명전극을 포함하는 페로브스카이트 기반 태양전지 | |
Yang et al. | 2D ultrawide bandgap semiconductors: odyssey and challenges | |
CN102154636A (zh) | 一种p型高透射率(100)-取向的LaNiO3纳米薄膜的制备方法 | |
WO2018231210A1 (en) | Thin film ferroelectric materials and methods of fabrication thereof | |
Ma et al. | Transparent antiradiative ferroelectric heterostructure based on flexible oxide heteroepitaxy | |
CN102270692A (zh) | 石墨烯-硒化镉纳米带异质结、电池、组件及制备方法 | |
Kang et al. | Antiperovskite oxides as promising candidates for high-performance ferroelectric photovoltaics: first-principles investigation on Ba4As2O and Ba4Sb2O | |
Lan et al. | Achieving ultrahigh photocurrent density of Mg/Mn-modified KNbO3 ferroelectric semiconductors by bandgap engineering and polarization maintenance | |
Mali et al. | Stability of unstable perovskites: recent strategies for making stable perovskite solar cells | |
Li et al. | Highly conductive and flexible electrodes based on ultrathin aluminum-doped zinc oxide epitaxial films | |
Mühlenbein et al. | Nanocomposites with three-dimensional architecture and impact on photovoltaic effect | |
Chang et al. | Pulse-driven nonvolatile perovskite memory with photovoltaic read-out characteristics | |
KR20180003666A (ko) | 반도체 소자 및 이의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210913 Address after: 311421 8th floor, building 23, No.68 Jiangnan Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou Zhongke Shenguang Technology Co.,Ltd. Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee before: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220329 Address after: 311421 room 706, building 23, No. 68 Jiangnan Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang Xinke Semiconductor Co.,Ltd. Address before: 311421 8th floor, building 23, No.68 Jiangnan Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Patentee before: Hangzhou Zhongke Shenguang Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |