CN112071939A - 一种基于铁电半导体和薄层二维材料的光电探测器 - Google Patents

一种基于铁电半导体和薄层二维材料的光电探测器 Download PDF

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CN112071939A
CN112071939A CN202010760672.8A CN202010760672A CN112071939A CN 112071939 A CN112071939 A CN 112071939A CN 202010760672 A CN202010760672 A CN 202010760672A CN 112071939 A CN112071939 A CN 112071939A
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牛刚
孙延笑
赵金燕
史鹏
任巍
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Xian Jiaotong University
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Abstract

本发明公开了一种基于铁电半导体和薄层二维材料的光电探测器，包括掺杂硅衬底、电介质层、二维材料薄膜层、α‑硒化铟二维铁电半导体层及两个金属电极，其中，掺杂硅衬底、电介质层、二维材料薄膜层及α‑硒化铟二维铁电半导体层自下到上依次分布，一个金属电极位于α‑硒化铟二维铁电半导体层上，另一个金属电极位于二氧化铪电介质层上，该探测器能够扩展响应光谱带宽，提高响应度。

Description

一种基于铁电半导体和薄层二维材料的光电探测器
技术领域
本发明涉及一种二维材料的光电探测器，具体涉及一种基于铁电半导体和薄层二维材料的光电探测器。
背景技术
自石墨烯通过机械剥离法获得以来，由于其优越的结构特性、光学特性和光电特性，石墨烯在诸多领域受到广泛关注和研究。随着石墨烯的研究深入，科学家发现了诸多具有类似结构的二维材料，包括类似石墨烯的六方氮化硼，氧化石墨烯等，此外还有过渡金属硫族化合物及其他二维氧化物材料等。以石墨烯为代表的二维材料具有良好的光电响应特性，能够实现宽光谱响应并提高响应灵敏度。
铁电材料作为一类有极化特性的材料，能够随着外加电场作用同步极化，这一特性使其在数据存储，以及光电响应领域有重要的应用。在光电器件应用中，铁电材料的极化能够对半导体层内的电流特性进行调控，从而提高光电探测器的灵敏度和增益。α-硒化铟作为典型二维铁电半导体材料，兼具了薄层材料的结构优势，室温下良好的铁电性以及半导体特性。
采用铁电材料与二维材料结合的光电探测器件能够在实现扩展探测光谱范围的同时，利用铁电层极化实现对器件的调控，从而提高光电探测器件的响应度和增益，然而现有技术中没有出现类似的光电探测器。
发明内容
本发明的目的在于克服上述现有技术的缺点，提供了一种基于铁电半导体和薄层二维材料的光电探测器，该探测器能够扩展响应光谱带宽，提高响应度。
为达到上述目的，本发明所述的基于铁电半导体和薄层二维材料的光电探测器包括掺杂硅衬底、电介质层、二维材料薄膜层、α-硒化铟二维铁电半导体层及两个金属电极，其中，掺杂硅衬底、电介质层、二维材料薄膜层及α-硒化铟二维铁电半导体层自下到上依次分布，一个金属电极位于α-硒化铟二维铁电半导体层上，另一个金属电极位于二氧化铪电介质层上。
掺杂硅衬底为n-掺杂硅衬底或者p-掺杂硅衬底。
电介质层的厚度为10-15nm。
α-硒化铟二维铁电半导体层的厚度为50-100nm。
二维材料薄膜层的厚度小于5nm。
α-硒化铟二维铁电半导体层与二维材料薄膜层构成P-N结结构。
电介质层为二氧化铪电介质层。
二维材料薄膜层的材料为石墨烯、过渡金属硫化物或六方氮化硼。
金属电极为铬金复合电极，金属电极中铬的厚度为10nm，金属电极中金的厚度为50nm。
本发明具有以下有益效果：
本发明所述的α-硒化铟二维铁电半导体层与二维材料薄膜层构成PN结作为光电响应功能层，α-硒化铟在实现光电效应的同时能够通过外加电场对其极化方向进行调整，以实现光电探测器件增益，有效增加光电响应光谱带宽，提高光电响应度，同时需要说明的是，本发明采用电介质层替换传统的二氧化硅栅极电介质材料，从而进一步缩小器件尺寸，结构简单，实用性极强。
附图说明
图1为本发明的结构示意图；
图2为本发明的一种铁电调控原理图；
图3为本发明的另一种铁电调控原理图。
其中，1为掺杂硅衬底、2为电介质层、3为α-硒化铟二维铁电半导体层、4为二维材料薄膜层、5为金属电极。
具体实施方式
下面结合附图对本发明做进一步详细描述：
参考图1，本发明所述的基于铁电半导体和薄层二维材料的光电探测器包括掺杂硅衬底1、电介质层2、二维材料薄膜层4、α-硒化铟二维铁电半导体层3及两个金属电极5，其中，掺杂硅衬底1、电介质层2、二维材料薄膜层4及α-硒化铟二维铁电半导体层3自下到上依次分布，一个金属电极5位于α-硒化铟二维铁电半导体层3上，另一个金属电极5位于二氧化铪电介质层2上。
电介质层2的厚度为10-15nm；α-硒化铟二维铁电半导体层3的厚度为50-100nm；二维材料薄膜层4的厚度小于5nm；α-硒化铟二维铁电半导体层3与二维材料薄膜层4构成P-N结结构；电介质层2为二氧化铪电介质层；二维材料薄膜层4的材料为石墨烯、过渡金属硫化物或六方氮化硼；金属电极5为铬金复合电极，金属电极5中铬的厚度为10nm，金属电极5中金的厚度为50nm。
另外，掺杂硅衬底1为p-型掺杂硅衬底或n-型掺杂硅衬底作为栅电极，通过对掺杂硅衬底1施加偏压实现晶体管调控。
电介质层2的材质为二氧化铪，电介质层2形成在掺杂硅衬底1上具有宽带隙和高介电常数的特点，二氧化铪作为具有高介电常数的氧化物材料，能够代替传统金属氧化物半导体场效应管中的二氧化硅，为解决传统电子器件发展已经接近尺寸极限的问题提供可能，本发明中采用二氧化铪作为电介质层2，能够很好地实现栅极调控。
α-硒化铟二维铁电半导体层3采用机械剥离法获得并转移到电介质层2上。
二维材料薄膜层4采用机械剥离法获得并定点转移到α-硒化铟二维铁电半导体层3上。
金属电极5采用磁控溅射、电子束蒸镀等方法获得。
金属电极5的制备过程为：首先对所述样品进行低温退火处理；然后在所述样品表面旋涂光刻胶，利用光刻技术绘制金属电极5的图案；利用磁控溅射、电子束蒸镀等方法获得金属电极5；最后用丙酮溶液去除光刻胶，随后进行低温退火处理，其中，低温退火处理温度为100-150℃，退火时间为0.5小时。
参见图2及图3，本发明中α-硒化铟二维铁电半导体层3能够通过外加电场对极化方向进行调控，从而调控器件的电流特性，从而增加光电器件的增益和响应。
附图中所示的结构仅用于示例性说明，不能理解为对本专利的限制。本发明的上述实施例的目的仅为清楚说明本发明所作的举例，而非对本发明实施方式的限定。对于所述领域的技术人员来说，在上述说明的基础上还可以对结构做出不同形式的变化和变动，这里不对实施方式进行穷举，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均包含在本发明权利所要求的保护范围之内。

Claims (9)

1.一种基于铁电半导体和薄层二维材料的光电探测器，其特征在于，包括掺杂硅衬底(1)、电介质层(2)、二维材料薄膜层(4)、α-硒化铟二维铁电半导体层(3)及两个金属电极(5)，其中，掺杂硅衬底(1)、电介质层(2)、二维材料薄膜层(4)及α-硒化铟二维铁电半导体层(3)自下到上依次分布，一个金属电极(5)位于α-硒化铟二维铁电半导体层(3)上，另一个金属电极(5)位于二氧化铪电介质层(2)上。
2.根据权利要求1所述的基于铁电半导体和薄层二维材料的光电探测器，其特征在于，掺杂硅衬底(1)为n-掺杂硅衬底或者p-掺杂硅衬底。
3.根据权利要求1所述的基于铁电半导体和薄层二维材料的光电探测器，其特征在于，电介质层(2)的厚度为10-15nm。
4.根据权利要求1所述的基于铁电半导体和薄层二维材料的光电探测器，其特征在于，α-硒化铟二维铁电半导体层(3)的厚度为50-100nm。
5.根据权利要求1所述的基于铁电半导体和薄层二维材料的光电探测器，其特征在于，二维材料薄膜层(4)的厚度小于5nm。
6.根据权利要求1所述的基于铁电半导体和薄层二维材料的光电探测器，其特征在于，α-硒化铟二维铁电半导体层(3)与二维材料薄膜层(4)构成P-N结结构。
7.根据权利要求1所述的基于铁电半导体和薄层二维材料的光电探测器，其特征在于，电介质层(2)为二氧化铪电介质层。
8.根据权利要求1所述的基于铁电半导体和薄层二维材料的光电探测器，其特征在于，二维材料薄膜层(4)的材料为石墨烯、过渡金属硫化物或六方氮化硼。
9.根据权利要求1所述的基于铁电半导体和薄层二维材料的光电探测器，其特征在于，金属电极(5)为铬金复合电极，金属电极(5)中铬的厚度为10nm，金属电极(5)中金的厚度为50nm。
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CN113793882A (zh) * 2021-08-05 2021-12-14 国家纳米科学中心 一种基于铁电pn结的光电器件及其制备方法
JPWO2023112751A1 (zh) * 2021-12-13 2023-06-22
CN113793882B (zh) * 2021-08-05 2024-09-27 国家纳米科学中心 一种基于铁电pn结的光电器件及其制备方法

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Application publication date: 20201211