CN111799342A - 一种基于硒化亚锡/硒化铟异质结的光电探测器及其制备方法 - Google Patents
一种基于硒化亚锡/硒化铟异质结的光电探测器及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种基于硒化亚锡/硒化铟异质结的光电探测器及其制备方法,其中,所述基于硒化亚锡/硒化铟异质结的光电探测器包括设置在衬底上的p型硒化亚锡薄膜和n型硒化铟薄膜,所述p型硒化亚锡薄膜和n型硒化铟薄膜之间设置有部分重叠区域,所述部分重叠区域通过范德华相互作用形成光电异质结,所述p型硒化亚锡薄膜和n型硒化铟薄膜不重叠的两端分别固定有一金属电极。本发明通过构建pn异质结,使p型硒化亚锡薄膜与n型硒化铟薄膜在光照条件下产生的电子与空穴在异质结处迅速分离,能够有效降低暗电流,明显提高所制备的光电探测器的光增益、光响应速度及光响应度。
Description
技术领域
本发明涉及光电探测领域,尤其涉及一种基于硒化亚锡/硒化铟异质结的光电探测器及其制备方法。
背景技术
光电探测器的原理是通过辐射引起被照射材料电导率发生改变,其中,半导体光电探测器主要是通过光子在半导体材料中激发非平衡载流子引起电学性能的发生变化,其具有体积小、可集成、响应速度快及灵敏度高等特点。根据不同的可探测光波段,可将光探测器可分为紫外光探测器、可见光探测器、红外光探测器,其中,紫外光探测器主要用于通讯、导弹预警与跟踪、天文学、灾害天气预报、火灾预警、海洋油污监控、生物医学等方面,可见近红外光探测器主要用于成像技术、射线测量和探测、工业自动控制系统、光学计量等方面,红外光探测器主要用于森林火灾监控、烟雾报警器、夜视设备、和红外遥感等方面。
硒化亚锡(SnSe)是一种含量丰富且化学性质稳定的IV-VI族半导体化合物,属于C2v空间点群,即使减薄至单层也非常稳定。硒化亚锡与黑磷的结构相似,是一种层状材料,层内由上下两层原子组成,每一个原子与周围的三个原子形成很强的Sn-Se共价键,但其层间的结合力非常微弱,易于通过剥离制备二维材料,且在“Armchair”方向和“Zigzag”方向具有很强的各向异性。天然的硒化亚锡为p型半导体,硒化亚锡的间接带隙为0.90eV,直接带隙为1.30eV,可用于光电探测器中,但硒化亚锡中的载流浓度较高,基于单独硒化亚锡的光电探测器暗电流较大,光电流增益较小,从而导致光电探测器的光响应时间和光响应度受到明显影响。
因此,现有技术仍有待于改进和发展。
发明内容
鉴于上述现有技术的不足,本申请的目的在于提供一种基于硒化亚锡/硒化铟异质结的光电探测器及其制备方法,旨在解决现有的硒化亚锡光电探测器的光响应时间长和光响应度低的技术问题。
本发明的技术方案如下所示:
提供了一种基于硒化亚锡/硒化铟异质结的光电探测器,其中,包括设置在衬底上的p型硒化亚锡薄膜和n型硒化铟薄膜,所述p型硒化亚锡薄膜和n型硒化铟薄膜之间设置有部分重叠区域,所述部分重叠区域通过范德华相互作用形成光电异质结,所述p型硒化亚锡薄膜和n型硒化铟薄膜不重叠的两端分别固定有一金属电极。
在上述实现方式中,通过光照可使所述p型硒化亚锡薄膜与所述n型硒化铟薄膜的内部产生很多的电子与空穴,而光生电子空穴会在异质结处迅速分离,从而能够有效降低暗电流,提高所制备的光电探测器的光增益、光响应速度及光响应度。
可选地,所述p型硒化亚锡薄膜的厚度为0.5nm-50nm。
可选地,所述n型硒化铟薄膜的厚度为0.8nm-80nm。
可选地,所述衬底包括硅衬底及设置在所述硅衬底上的绝缘衬底。
可选地,所述绝缘衬底的材料为二氧化硅。
可选地,所述金属电极的材料为金、钛、铬、镍和钨中的一种。
基于同样的发明构思,本发明还提供有一种硒化亚锡/硒化铟异质结光电探测器的制备方法,其中,包括步骤:
采用丙酮、乙醇及去离子水对衬底进行清洗;
预先制备p型硒化亚锡薄膜和n型硒化铟薄膜;
将所述p型硒化亚锡薄膜转移至衬底表面,其后,通过微机械转移平台将n型硒化铟薄膜定向转移至所述p型硒化亚锡薄膜上方,并与所述所述p型硒化亚锡薄膜部分重叠;
在所述衬底上制作电极图案,并以蒸镀方式制备金属电极,即制得基于硒化亚锡/硒化铟异质结的光电探测器。
可选地,所述p型硒化亚锡薄膜采用物理气相沉积方法制备得到。
可选地,所述n型硒化铟薄膜采用机械剥离法制备得到。
可选地,所述将p型硒化亚锡薄膜转移至衬底表面的步骤包括:
将所述p型硒化亚锡薄膜转移至PDMS衬底上,其后,通过微机械转移平台,将所述p型硒化亚锡薄膜从所述PDMS衬底转移至衬底表面。
附图说明
图1为本发明所制备的基于硒化亚锡/硒化铟异质结的光电探测器的较佳实施例的结构示意图。
图2为本发明所制备的基于硒化亚锡/硒化铟异质结的光电探测器的另一较佳实施例的结构示意图。
图3为本发明实施例1中所制备的基于硒化亚锡/硒化铟异质结的光电探测器对不同波长的光线的探测I-V曲线图。
图4为本发明实施例1中所制备的基于硒化亚锡/硒化铟异质结的光电探测器的光响应时间曲线图。
具体实施方式
为了便于理解本申请,下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施方式。但是,本申请可以以许多不同的形式来实现,并不限于本文所描述的实施方式。相反地,提供这些实施方式的目的是使对本申请的公开内容理解的更加透彻全面。
除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。在本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的,不是旨在于限制本申请。
基于现有的硒化亚锡的光电探测器的光响应时间长、光响应度低的技术问题,本发明提供了一种基于硒化亚锡/硒化铟异质结的光电探测器,如图1所示,所述基于硒化亚锡/硒化铟异质结的光电探测器包括设置在衬底1上的p型硒化亚锡薄膜2和n型硒化铟薄膜3,所述p型硒化亚锡薄膜2和n型硒化铟薄膜3之间设置有部分重叠区域,所述部分重叠区域通过范德华相互作用形成光电异质结,所述p型硒化亚锡薄膜2和n型硒化铟薄膜3不重叠的两端分别固定有一金属电极4。
本实施例中,硒化亚锡是天然的p型半导体材料,其带隙为0.9eV,可以探测波段比较宽的范围,但硒化亚锡的载流子浓度较高,从而导致其暗电流较大,硒化铟是一种n型半导体材料,其带隙为1.3eV,探测波段比硒化亚锡要窄,但其暗电流较小,当p型硒化亚锡薄膜与n型硒化铟薄膜进行叠合形成异质结,由于两种材料的导带和价带的位置不同,硒化铟的导带位于硒化亚锡的导带和价带中间,形成的是Type-Ⅱ型能带异质结构。
进一步地,由于硒化铟的费米能级与硒化亚锡也不相同,当形成异质结后,在异质结区域,所述p型硒化亚锡薄膜中的空穴倾向于向所述n型硒化铟薄膜侧移动,而所述n型硒化铟薄膜中的电子将移动到所述p型硒化亚锡薄膜中,因此,所述n型硒化铟薄膜与所述p型硒化亚锡薄膜相接触的面的能带将向上弯曲,而所述p型硒化亚锡薄膜与所述n型硒化铟薄膜相接触的面的能带将向下弯曲,使得所述p型硒化亚锡薄膜与所述n型硒化铟薄膜的费米能级在同一水平上,同时,在所述p型硒化亚锡薄膜与所述n型硒化铟薄膜的界面附近会形成内电场,内电场的形成可保证所形成的异质结在零外部偏压的条件下工作,即产生光生伏特效应,在光照条件下,所述p型硒化亚锡薄膜与所述n型硒化铟薄膜内部会产生大量的电子与空穴,在内电场的作用下,电子与空穴会快速分离,从而产生光电流,实现对光线的探测。
本实施例中,通过构建pn异质结,使p型硒化亚锡薄膜与n型硒化铟薄膜在光照条件下产生的电子与空穴在异质结处迅速分离,能够有效降低暗电流,明显提高所制备的光电探测器的光增益、光响应速度及光响应度。
在一些实施方式中,所述p型硒化亚锡薄膜的厚度为0.5nm-50nm。本实施例中,所述p型硒化亚锡薄膜的厚度为0.5nm-50nm,其所对应的层数为1-100层。
在一些实施方式中,所述n型硒化铟薄膜的厚度为0.8nm-80nm。本实施例中,所述n型硒化铟薄膜的厚度为0.8nm-80nm,其所对应的层数为1-100层。
在一些实施方式中,所述衬底包括硅衬底及设置在所述硅衬底上的绝缘衬底。在本实施例中,如图2所示,所述衬底1包括硅衬底10及设置在所述硅衬底10上的绝缘衬底11,由于硅衬底10是高掺杂的材料,具有很强的导电性,因此,本实施例中在所述硅衬底10上设置有一层绝缘衬底11,优选地,所述绝缘衬底11的材料为二氧化硅。
在一些实施方式中,所述金属电极的材料为金、钛、铬、镍和钨中的一种。本实施例中,在所述p型硒化亚锡薄膜和n型硒化铟薄膜不重叠的两端分别固定有一金属电极,所述金属电极的材料为金、钛、铬、镍和钨中的一种,其中,所述p型硒化亚锡薄膜一端连接的所述金属电极为源电极,所述n型硒化铟薄膜一端连接的所述金属电极为漏电极。
进一步地,基于同样的发明构思,本发明还提供有一种基于硒化亚锡/硒化铟异质结的光电探测器的制备方法,其中,包括步骤:
S10、采用丙酮、乙醇及去离子水对衬底进行清洗;
S20、预先制备p型硒化亚锡薄膜和n型硒化铟薄膜;
S30、将所述p型硒化亚锡薄膜转移至衬底表面,其后,通过微机械转移平台将n型硒化铟薄膜定向转移至所述p型硒化亚锡薄膜上方,并与所述所述p型硒化亚锡薄膜部分重叠;
S40、在所述衬底上制作电极图案,并以蒸镀方式制备金属电极,即制得基于硒化亚锡/硒化铟异质结的光电探测器。
本实施例中,所述p型硒化亚锡薄膜采用物理气相沉积方法制备得到,其具体步骤包括:将硒化亚锡粉末置于石英舟中,并将SiO2/Si衬底倒扣于所述硒化亚锡粉末上方;将所述石英舟放置于管式炉中,在氩气保护下,加热反应制备得到所述p型硒化亚锡薄膜。所述n型硒化铟薄膜采用机械剥离法制备得到。
在一些实施方式中,所述将p型硒化亚锡薄膜转移至衬底表面的步骤包括:
将所述p型硒化亚锡薄膜转移至PDMS衬底上,其后,通过微机械转移平台,将所述p型硒化亚锡薄膜从所述PDMS衬底转移至衬底表面。
本实施例中,所述PDMS(聚二甲基硅氧烷)衬底为具有黏性的柔性衬底,可利用所述PDMS衬底的黏性来粘结所述p型硒化亚锡薄膜,其后,再通过微机械转移平台将所述p型硒化亚锡薄膜从所述PDMS衬底转移至衬底表面。
下面通过具体实施例对本发明一种基于硒化亚锡/硒化铟异质结的光电探测器及其制备方法做进一步的解释说明。
实施例1
首先,采用物理气相沉积方法制备得到p型硒化亚锡薄膜,以及采用机械剥离法制备得到n型硒化铟薄膜,其后,采用丙酮、乙醇及去离子水对SiO2/Si衬底进行清洗及用氮气吹干,将p型硒化亚锡薄膜转移至PDMS衬底上,并通过微机械转移平台,将PDMS衬底上的p型硒化亚锡薄膜转移至SiO2/Si衬底表面,接着通过微机械转移平台将n型硒化铟薄膜定向转移至p型硒化亚锡薄膜上方,并与p型硒化亚锡薄膜部分重叠,形成pn光电异质结,进一步地,采用标准光刻工艺在SiO2/Si衬底上制作电极图案,并以蒸镀方式在p型硒化亚锡薄膜的一端以及n型硒化铟薄膜的一端制备金电极,其后,利用有机溶剂除去光刻过程中残留的光刻胶以及多余的金粉,即制得硒化亚锡/硒化铟异质结光电探测器,其中,所制备的p型硒化亚锡薄膜的厚度为30nm,所制备的n型硒化铟薄膜的厚度为40nm。
进一步地,本发明中,对实施例1中所制备的基于硒化亚锡/硒化铟异质结的光电探测器的光电性能进行检测,图3为实施例1中所制备的基于硒化亚锡/硒化铟异质结的光电探测器在不同波长的光线下的I-V曲线图,图中数据表明了所制备的基于硒化亚锡/硒化铟异质结的光电探测器对405nm至1064nm波长的光均具有较好的光响应,同时,利用图3中的测试数据进行计算,可获知所制备的基于硒化亚锡/硒化铟异质结的光电探测器的最大光响应度为6.6A/W。图4为实施例1中所制备的基于硒化亚锡/硒化铟异质结的光电探测器的光响应时间曲线图,由图中数据可知,本发明实施例1中所制备的基于硒化亚锡/硒化铟异质结的光电探测器对光的响应稳定,具有较大的光电流增益,其响应速度和恢复速度均达到50ms。
综上所述,本发明通过将p型硒化亚锡薄膜和n型硒化铟薄膜部分重叠形成pn光电异质结,所制备得到的基于硒化亚锡/硒化铟异质结的光电探测器的的波长范围广,且光响应时间短,光响应度高,且在0V偏压下可以产生光电流,具有自驱动效应。
应当理解的是,本发明的应用不限于上述的举例,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,所有这些改进和变换都应属于本发明所附权利要求的保护范围。
Claims (10)
1.一种基于硒化亚锡/硒化铟异质结的光电探测器,其特征在于,包括设置在衬底上的p型硒化亚锡薄膜和n型硒化铟薄膜,所述p型硒化亚锡薄膜和n型硒化铟薄膜之间设置有部分重叠区域,所述部分重叠区域通过范德华相互作用形成光电异质结,所述p型硒化亚锡薄膜和n型硒化铟薄膜不重叠的两端分别固定有一金属电极。
2.根据权利要求1所述的基于硒化亚锡/硒化铟异质结的光电探测器,其特征在于,所述p型硒化亚锡薄膜的厚度为0.5nm-50nm。
3.根据权利要求1所述的基于硒化亚锡/硒化铟异质结的光电探测器,其特征在于,所述n型硒化铟薄膜的厚度为0.8nm-80nm。
4.根据权利要求1所述的基于硒化亚锡/硒化铟异质结的光电探测器,其特征在于,所述衬底包括硅衬底及设置在所述硅衬底上的绝缘衬底。
5.根据权利要求1所述的基于硒化亚锡/硒化铟异质结的光电探测器,其特征在于,所述绝缘衬底的材料为二氧化硅。
6.根据权利要求1所述的基于硒化亚锡/硒化铟异质结的光电探测器,其特征在于,所述金属电极的材料为金、钛、铬、镍和钨中的一种。
7.一种基于硒化亚锡/硒化铟异质结的光电探测器的制备方法,其特征在于,包括步骤:
采用丙酮、乙醇及去离子水对衬底进行清洗;
预先制备p型硒化亚锡薄膜和n型硒化铟薄膜;
将所述p型硒化亚锡薄膜转移至衬底表面,其后,通过微机械转移平台将n型硒化铟薄膜定向转移至所述p型硒化亚锡薄膜上方,并与所述所述p型硒化亚锡薄膜部分重叠;
在所述衬底上制作电极图案,并以蒸镀方式制备金属电极,即制得基于硒化亚锡/硒化铟异质结的光电探测器。
8.根据权利要求7所述的基于硒化亚锡/硒化铟异质结的光电探测器的制备方法,其特征在于,所述p型硒化亚锡薄膜采用物理气相沉积方法制备得到。
9.根据权利要求7所述的基于硒化亚锡/硒化铟异质结的光电探测器的制备方法,其特征在于,所述n型硒化铟薄膜采用机械剥离法制备得到。
10.根据权利要求7所述的基于硒化亚锡/硒化铟异质结的光电探测器的制备方法,其特征在于,所述将p型硒化亚锡薄膜转移至衬底表面的步骤包括:
将所述p型硒化亚锡薄膜转移至PDMS衬底上,其后,通过微机械转移平台,将所述p型硒化亚锡薄膜从所述PDMS衬底转移至衬底表面。
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