CN112420872B - 基于WSe2/KTaO3范德华异质结的光电探测器及其制备方法 - Google Patents
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Abstract
本发明涉及一种基于WSe2/KTaO3范德华异质结的光电探测器及其制备方法，属于光电材料技术领域。将少层WSe2转移到单晶KTO表面，再制备金属电极、二硒化钨和钽酸钾表面电子气及其构成的范德华异质结。本发明提供的基于WSe2/KTaO3范德华异质结构可实现对光照条件开/关的瞬时光电响应，开/关电流之比高达104；同时，在不加偏压时也能产生短路电流，可作为自供能光电探测器使用。这种光电器件结构简单、制备简单、性能优良。本发明技术方案为2D材料/2DEG系统的范德华异质结在高性能光电器件和光电探测器中的应用提供了可能。
Description
技术领域
本发明属于光电材料技术领域，具体涉及高性能光电探测器件及其制备方法。
背景技术
高性能光电探测器是诸如光通信，成像和环境传感等最新技术的重要组成部分。对于光电材料吸收入射光子,产生光生载流子，当前已经有许多技术提出通过选择合适的材料或功能结构可以提高光电转换效率。然而，这些技术并不一定能导致高光电导。由于电子-空穴对的快速复合，材料可能无法产生足够多的光生载流子参与导电，这将限制其光电导性能。通常来说，PN结的构造有利于提高光电导性能。通过结俘获的方式可以分离电子-空穴对并延长光电载流子的寿命。范德华异质结的最新进展为高性能光电器件开辟了道路。基于二维层状材料，范德华结可以制备出优秀的光电探测元件，以增强光吸收，光捕获和光载流子分离。适当控制层状材料的结构，可以调整范德华异质结的光电性能，而不会改变其他性能。到目前为止，尽管对范德华结进行了广泛研究，但由于技术困难，尚未使用另一种二维系统二维电子气与二维材料实现结接触。
发明内容
本发明针对现有技术存在的不足，提供一种结构简单、制备简便、性能优良的基于WSe2/KTaO3范德华异质结的高响应光电探测器及其制备方法。
实现本发明目的的技术方案是提供一种基于WSe2/KTaO3范德华异质结的光电探测器的制备方法，包括如下步骤：
（1）采用机械剥离法将少层WSe2从块材WSe2上转移到单晶KTO表面；
（2）采用光刻工艺将一侧2/3面积的WSe2及同侧KTO衬底用光刻胶覆盖，其余部分暴露；
（3）在2×10-4 ～ 6×10-4mbar气压下，进行磁控溅射3～10分钟，在步骤（2）获得的样品表面沉积金；再去除光刻胶，制备金电极；
（4）采用光刻工艺将光刻胶覆盖于WSe2制备有金电极一侧2/3的面积及同侧KTO衬底；
（5）在3×10-6～8×10-6mbar气压下，用电压为200V～500V的Ar+离子束照射暴露的WSe2及部分衬底5～15分钟，形成二维电子气2DEG；再经清洗，得到一种WSe2/2DEG范德华异质结的光电探测器。
本发明技术方案还包括按上述制备方法得到的一种WSe2/2DEG范德华异质结的光电探测器。
本发明所述的异质结在可见光范围内具有光电响应；在光照开/关状态下，所述异质结的响应时间小于1秒。在405纳米波长的光照条件下，所述的异质结开/关电流比达到104。所述的异质结在不加偏置电压的条件下，光诱发感生电流。
实验测量表明，本发明提供的WSe2/2DEG范德华异质结对开/关光照条件表现出了瞬时响应。在加1V偏压下光电流与光功率呈线性依赖关系。随着光波长的减小，单位功率光照产生的光电流单调增加，在405 nm处达到0.49 A / W的最大值。 随着波长超过655 nm，光敏度将急剧下降，这代表器件对可见光中长波波段的响应不如短波波段的响应灵敏。在不加偏压时器件的光响应与1V偏压下相近。但是此时单位功率光照产生的光电流不再随波长减小单调增加，当波长为532nm时达到最小值，而最大值仍然在405nm光照时出现。
本发明的有益效果在于：
1.本发明提供的器件在开/关光照时能发生瞬时光电响应，其电流变化超过四个数量级。随着波长减少光电导率大大提高。在不加偏压时，异质结是一种自供电光电探测器，在光照下能产生短路光电流，可应用在光电材料器件领域。
2.本发明提供的WSe2/KTO表面电子气PN结可用于制造高性能的光电器件。制备的光电探测器件对开/关光照具有灵敏的瞬时响应，其结构简单，制备简便，性能优良，适用于光电材料器件技术领域。
附图说明
图1为本发明实施例提供的一种基于WSe2/KTaO3范德华异质结的高响应光电探测器的制备流程示意图。
图2为本发明实施例制备的基于WSe2/KTaO3范德华异质结的高响应光电探测器器件在不同光功率的405纳米光照下的伏安特性；图中插图显示了对数坐标下的伏安曲线。
图3为本发明实施例制备的基于WSe2/KTaO3范德华异质结的高响应光电探测器在1V偏置电压下，分别在波长为405 nm、532 nm和655 nm的光照下,在不同光功率下器件的开/关光电响应图。
具体实施方式
下面结合附图和实施例对本发明技术方案作进一步说明。
实施例1
参见附图1，为本实施例提供的一种基于WSe2/KTaO3范德华异质结的高响应光电探测器的制备流程及产品结构示意图；制备过程如下：
用胶带通过机械剥离法将少层WSe2从块材WSe2上转移到单晶KTO表面；通过光刻技术将WSe2的2/3及该侧KTO衬底用光刻胶覆盖，其余部分暴露光刻2.7s，显影45s；在3×10-4mbar气压下，磁控溅射10分钟，在上一步获得的样品表面沉积金，然后用丙酮将光刻胶去除，制备出金电极；再次使用光刻工艺使光刻胶覆盖WSe2带金电极那一边的2/3及该侧KTO衬底，同样显影45s；在5×10-6 mbar气压下，用电压为250V的Ar+离子束照射暴露的WSe2及部分衬底13分钟，直至衬底也被部分刻蚀而形成二维电子气(2DEG)，最后用丙酮、酒精和去离子水清洗样品则完成了WSe2/2DEG的异质结制备。利用电焊机在金电极与衬底表面电子气引出导线用于电学测量。
本实施例在KTO衬底上制备WSe2/2DEG异质结，层状材料硒化钨作为P极，表面电子气作为N极。单晶KTO衬底为透明绝缘氧化物，经离子束轰击后表面形成导电的二维电子气，为N型，形成了范德华异质结的N极。WSe2为P型二维半导体层状材料。本发明中使用机械剥离方法将少量WSe2粘贴在单晶STO衬底的表面，构成范德华异质结。所制备的金电极，由于使用机械剥离法获得的WSe2尺寸较小，不利于后续处理，因此，本实施例通过光刻技术在WSe2一侧蒸镀金电极，增加导电面积。
参见附图2，它是本实施例制备的WSe2/2DEG异质结在不同光功率密度的405 nm光照下的伏安曲线图。由于PN结的性质，正偏置电压下的电流比负偏置电压下的电流大得多。图2中的插图显示了对数标度的曲线。正电流和负电流对入射光都有很大的响应。在正偏压下，光导致最大电流增加超过4个数量级；在负偏压下，光电流和暗电流的比率高达103。而且可以看到，当电压为零时，依然存在光诱发的短路电流，因此可以作为自供能光电探测器。
参见附图3，它是本实施例制备的WSe2/2DEG异质结在1 V偏置电压下，分别在波长为405 nm、532 nm和655 nm的光照下,在不同光功率下器件的开/关光电响应图。由图3观察到光电响应是瞬时的，这表明作为高速光电探测器的潜在应用。其中，异质结在405 nm光照下表现出最大的光电导效应。
本发明实施例的基于WSe2/KTaO3范德华异质结的高响应光电探测器在可见光照射下，室温偏压下有高性能的光电响应。即使没有偏置电压，由于光伏效应，该器件仍然产生自供电光电流，为高性能电调谐光电效应在2D材料/2DEG系统中的应用提供了可能性。
Claims (5)
1.一种基于WSe2/KTaO3范德华异质结的光电探测器的制备方法，其特征在于包括如下步骤：
（1）采用机械剥离法将少层WSe2从块材WSe2上转移到单晶KTO表面；
（2）采用光刻工艺将一侧2/3面积的WSe2及同侧KTO衬底用光刻胶覆盖，其余部分暴露；
（3）在2×10-4 ～ 6×10-4mbar气压下，进行磁控溅射3～10分钟，在步骤（2）获得的样品表面沉积金；再去除光刻胶，制备金电极；
（4）采用光刻工艺将光刻胶覆盖于WSe2制备有金电极一侧2/3的面积及同侧KTO衬底；
（5）在3×10-6～8×10-6mbar气压下，用电压为200V～500V的Ar+离子束照射暴露的WSe2及部分衬底5～15分钟，形成二维电子气2DEG；再经清洗，得到一种WSe2/2DEG范德华异质结的光电探测器。
2.按权利要求1制备方法得到的一种WSe2/2DEG范德华异质结的光电探测器。
3.根据权利要求2所述的一种WSe2/2DEG范德华异质结的光电探测器，其特征在于：所述的异质结在可见光范围内具有光电响应；在光照开/关状态下，所述异质结的响应时间小于1秒。
4.根据权利要求2或3所述的一种WSe2/2DEG范德华异质结的光电探测器，其特征在于：在405纳米波长的光照条件下，所述的异质结开/关电流比达到104。
5.根据权利要求2或3所述的一种WSe2/2DEG范德华异质结的光电探测器，其特征在于：所述的异质结在不加偏置电压的条件下，光诱发感生电流。
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| CN103310991A (zh) * | 2012-12-27 | 2013-09-18 | 长兴化学工业股份有限公司 | 薄膜电极及其制法 |
| CN109844969A (zh) * | 2016-07-18 | 2019-06-04 | 剑桥企业有限公司 | 可扩展量子限制装置 |
| CN111682088A (zh) * | 2020-06-30 | 2020-09-18 | 哈尔滨工业大学 | 一种基于范德华异质结的隧穿型光电探测器及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103310991A (zh) * | 2012-12-27 | 2013-09-18 | 长兴化学工业股份有限公司 | 薄膜电极及其制法 |
| CN109844969A (zh) * | 2016-07-18 | 2019-06-04 | 剑桥企业有限公司 | 可扩展量子限制装置 |
| CN111682088A (zh) * | 2020-06-30 | 2020-09-18 | 哈尔滨工业大学 | 一种基于范德华异质结的隧穿型光电探测器及其制备方法 |
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