CN211670197U - 一种二氧化钒和二维半导体的结型光探测器 - Google Patents
一种二氧化钒和二维半导体的结型光探测器 Download PDFInfo
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Abstract
本专利公开了一种二氧化钒和二维半导体的结型光探测器。该探测器首先通过磁控溅射在氧化铝衬底上生长了一层均匀的二氧化钒薄膜，然后利用光刻掩膜和氩等离子体刻蚀技术将二氧化钒薄膜刻蚀成阵列，随后通过干法转移将二维半导体转移到二氧化钒材料上，形成垂直结构的异质结，随后运用电子束光刻的方法结合剥离工艺在二氧化钒和二维半导体上制备金属电极，形成垂直结构的异质结型光探测器件。器件结构自下而上为衬底、二氧化钒、二维半导体和金属源漏电极。通过调控偏压，该器件可实现P‑N结和Bolometer转换，从而实现可见光至远红外波段光谱的探测，功耗低，灵敏度高，而且可在高温环境中工作。
Description
技术领域
本专利涉及一种二氧化钒和二维半导体的结型光探测器件，属于纳米材料技术领域。
背景技术
近年来，以二硫化钼(MoS2)为代表的过渡金属硫族化合物的出现，为光电探测领域的发展提供了契机。这类过渡金属硫族化合物[Nature Nanotechnology 7,699(2012)]具有1eV-2eV的禁带宽度，载流子有效迁移率可以高达几百cm2V-1s-1，而且可以利用化学气相沉积的方法实现大面积制备，这些优异特性使得这类材料可以用于可见光的有效探测。事实上，基于二维半导体的光电探测器早已开始研究，并取得了较好的发展，比如基于二硫化钼的光电探测器[Nature Nanotechnology 8,497(2013)]可以实现高灵敏的探测，探测率高达880AW-1。
然而，过渡金属硫族化合物在光电探测领域也并不是一帆风顺，比如它的禁带宽度限制了它在红外光电探测器方面的应用，因为这类半导体本身的带隙落在紫外至可见波段，虽然通过能带工程能使其延伸到近红外波段[Advanced Materials 27,6575(2015)]，但却很难再进一步延伸。尽管现在也有其他的二维半导体，比如Bi2SeO2[NatureCommunications 9,3311(2018)]和BP[Nature Nanotechnology 10,707(2015)]，这些材料的禁带宽度可调，通过厚度的控制可使其带隙处于0.2-0.3eV，可对应到中波红外区域，但这些材料的制备难度和空气稳定性却抑制了他们的发展。此外,二维材料的厚度也限制了他对光的吸收，导致光电转换效率较低，而厚的二维材料暗电流大，很难被完全抑制。基于以上分析，针对二维半导体在光探测器方面的应用，迫切需要通过器件结构的优化和工艺的改进，增加光的吸收同时降低暗电流，并且延长探测波长。
发明内容
为了解决以上问题，本专利提出一种二氧化钒和二维半导体的结型光探测器件。该方法采用二氧化钒和较厚的、空气稳定的、带隙较窄的二维半导体结合，通过构建垂直型异质结型器件，增加光吸收的同时降低暗电流。该器件在零偏压下是P-N结型器件，可以探测到2微米波长的光；在正偏下可利用二氧化钒的bolometer特性，使探测波长延伸到长波红外，实现了超宽光谱的探测；而在极端高温环境中，该器件会转变为肖特基型器件，从而实现光探测，拓宽了光电探测器的应用领域。
本专利是一种二氧化钒和二维半导体的结型光探测器件及制备方法，其特征在于，器件自下而上依次为：
衬底1、二氧化钒2、二维半导体3、金属源极4、金属漏极5，
其中衬底1为厚度为500微米的氧化铝，表面粗糙度为0.5纳米；
其中二氧化钒2为厚度22纳米的二氧化钒薄膜，表面粗糙度为1纳米；
其中二维半导体3为过渡金属硫族化合物，厚度为20-40纳米；
其中金属源极4、金属漏极5为铂和金电极，铂厚度为15纳米，金厚度为 65纳米。
本专利是一种二氧化钒和二维半导体的结型光探测器件及制备方法，其特征在于，制备方法包括以下步骤：
1)通过磁控溅射的方法在氧化铝衬底上制备一层钒金属薄膜，并通过热氧化法将其转变成二氧化钒薄膜；
2)采用紫外光刻技术在二氧化钒薄膜上制作阵列掩膜，利用氩等离子体刻蚀技术刻蚀掉曝光区域，除去掩模后形成二氧化钒方块阵列；
3)用机械剥离的方法在硅片上剥离过渡金属硫族化合物二维半导体，如二硫化钼和二碲化钼，厚度为20-40纳米。用聚二甲基硅氧烷(PDMS)将二维半导体转移到刻蚀好的二氧化钒表面，形成错位堆叠的垂直异质结结构。
4)采用紫外光刻技术或者电子束曝光技术，结合热蒸发和剥离工艺，分别在二维半导体和二氧化钒上制备金属电极，铂15纳米，金65纳米，形成二氧化钒和二维半导体的异质结型器件。
本专利的优点在于：专利采用了二氧化钒和二维半导体形成垂直异质结结构器件，结合了三种不同的光探测模式，实现了超宽光谱的探测。在零偏压下，该器件表现为P-N结型器件，器件可以吸收2微米波长以下的光，产生电子空穴对并被P-N结内建电场分离，实现可见光和近红外的高灵敏光电探测。器件在正偏时，内建电场被屏蔽，二氧化钒可以吸收短波至长波红外光的热量，利用bolometer效应，减小自身电阻，改变电流大小，从而实现超宽光谱的有效探测。当器件环境温度由常温升至70度以上，二氧化钒由半导体变为金属，器件也因此变为肖特基结型探测器，从而实现在高温工作环境下的有效光探测。
附图说明
图1为制备的二氧化钒和二维半导体的结型探测器的结构示意图。图中： 1为衬底、2为二氧化钒、3为二维半导体、4为金属源极、5为金属漏极。
图2为器件探测可见光至短波红外光的探测原理示意图。
图3为器件探测中长波红外光的探测原理示意图。
图4为高温工作模式下的探测原理示意图。
具体实施方式
下面结合具体实施例对专利的技术方案进行详细说明。
实施例1
1)通过磁控溅射的方法在氧化铝衬底上溅射一层均匀的钒金属薄膜，通过热氧化法将其转变成二氧化钒薄膜，薄膜厚度为22纳米，表面粗糙度为1 纳米；
2)采用紫外光刻技术在步骤1的二氧化钒薄膜上制作阵列掩膜，利用氩等离子体刻蚀技术刻蚀掉曝光区域，除去掩模后形成二氧化钒的方块阵列；
3)用机械剥离的方法在硅片上剥离二维半导体二碲化钼，厚度为20纳米。用聚二甲基硅氧烷(PDMS)将剥离好的二维半导体转移到步骤2中的二氧化钒表面，再除去PDMS，形成二维半导体材料和二氧化钒错位堆叠的垂直异质结结构。
4)采用紫外光刻技术或者电子束曝光技术，结合热蒸发和剥离工艺，分别在步骤3的二维半导体和二氧化钒上制备金属电极，铂15纳米，金65纳米，形成完整的二氧化钒和二维半导体的异质结型器件。
实施例2
1)通过磁控溅射的方法在氧化铝衬底上溅射一层均匀的钒金属薄膜，通过热氧化法将其转变成二氧化钒薄膜，薄膜厚度为22纳米，表面粗糙度为1 纳米；
2)采用紫外光刻技术在步骤1的二氧化钒薄膜上制作阵列掩膜，利用氩等离子体刻蚀技术刻蚀掉曝光区域，除去掩模后形成二氧化钒的方块阵列；
3)用机械剥离的方法在硅片上剥离二维半导体二碲化钼，厚度为30纳米。用聚二甲基硅氧烷(PDMS)将剥离好的二维半导体转移到步骤2中的二氧化钒表面，再除去PDMS，形成二维半导体材料和二氧化钒错位堆叠的垂直异质结结构。
4)采用紫外光刻技术或者电子束曝光技术，结合热蒸发和剥离工艺，分别在步骤3的二维半导体和二氧化钒上制备金属电极，铂15纳米，金65纳米，形成完整的二氧化钒和二维半导体的异质结型器件。
实施例3
1)通过磁控溅射的方法在氧化铝衬底上溅射一层均匀的钒金属薄膜，通过热氧化法将其转变成二氧化钒薄膜，薄膜厚度为22纳米，表面粗糙度为1 纳米；
2)采用紫外光刻技术在步骤1的二氧化钒薄膜上制作阵列掩膜，利用氩等离子体刻蚀技术刻蚀掉曝光区域，除去掩模后形成二氧化钒的方块阵列；
3)用机械剥离的方法在硅片上剥离二维半导体二碲化钼，厚度为40纳米。用聚二甲基硅氧烷(PDMS)将剥离好的二维半导体转移到步骤2中的二氧化钒表面，再除去PDMS，形成二维半导体材料和二氧化钒错位堆叠的垂直异质结结构。
4)采用紫外光刻技术或者电子束曝光技术，结合热蒸发和剥离工艺，分别在步骤3的二维半导体和二氧化钒上制备金属电极，铂15纳米，金65纳米，形成完整的二氧化钒和二维半导体的异质结型器件。
Claims (1)
1.一种二氧化钒和二维半导体的结型光探测器，其特征在于，
所述的结型光探测器自下而上依次为：衬底(1)、二氧化钒(2)、二维半导体(3)、金属源极(4)、金属漏极(5)，其中:
所述的衬底(1)为氧化铝衬底，厚度为500微米,表面粗糙度为0.5纳米；
所述的二氧化钒(2)为二氧化钒薄膜，厚度为22纳米，表面粗糙度为1纳米；
所述的二维半导体(3)为过渡金属硫族化合物，厚度为20-40纳米；
所述的金属源极(4)、金属漏极(5)为铂和金电极，铂厚度为15纳米，金厚度为65纳米。
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