CN109285945B - 基于二维铁电半导体的非易失存储器及其制备方法 - Google Patents
基于二维铁电半导体的非易失存储器及其制备方法 Download PDFInfo
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- CN109285945B CN109285945B CN201810977621.3A CN201810977621A CN109285945B CN 109285945 B CN109285945 B CN 109285945B CN 201810977621 A CN201810977621 A CN 201810977621A CN 109285945 B CN109285945 B CN 109285945B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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CN112639975A (zh) * | 2018-09-06 | 2021-04-09 | 新加坡国立大学 | 金属硫属元素化物的连续薄膜 |
CN109950364B (zh) * | 2019-04-02 | 2021-07-27 | 中国科学院半导体研究所 | 基于二维硒化亚锗光电探测器的成像元件制备方法 |
CN111799342A (zh) * | 2020-07-22 | 2020-10-20 | 深圳大学 | 一种基于硒化亚锡/硒化铟异质结的光电探测器及其制备方法 |
CN112071939A (zh) * | 2020-07-31 | 2020-12-11 | 西安交通大学 | 一种基于铁电半导体和薄层二维材料的光电探测器 |
CN114388620B (zh) * | 2022-01-14 | 2022-08-23 | 北京科技大学 | 一种基于α-硒化铟纳米片的二维范德华铁电隧穿结存储器的构筑方法 |
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Effective date of registration: 20220329 Address after: 311421 room 706, building 23, No. 68 Jiangnan Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang Xinke Semiconductor Co.,Ltd. Address before: 311421 8th floor, building 23, No.68 Jiangnan Road, Chunjiang street, Fuyang District, Hangzhou City, Zhejiang Province Patentee before: Hangzhou Zhongke Shenguang Technology Co.,Ltd. |