CN109273542A - 铜铟镓硒太阳能电池吸收层、制备方法及太阳能电池 - Google Patents
铜铟镓硒太阳能电池吸收层、制备方法及太阳能电池 Download PDFInfo
- Publication number
- CN109273542A CN109273542A CN201811189521.0A CN201811189521A CN109273542A CN 109273542 A CN109273542 A CN 109273542A CN 201811189521 A CN201811189521 A CN 201811189521A CN 109273542 A CN109273542 A CN 109273542A
- Authority
- CN
- China
- Prior art keywords
- copper
- gallium
- layer
- indium gallium
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 title claims abstract description 77
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910052738 indium Inorganic materials 0.000 claims abstract description 137
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 137
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 122
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 122
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims abstract description 99
- 239000011669 selenium Substances 0.000 claims abstract description 89
- 239000010949 copper Substances 0.000 claims abstract description 82
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052802 copper Inorganic materials 0.000 claims abstract description 61
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 47
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000012528 membrane Substances 0.000 claims abstract description 37
- 238000010521 absorption reaction Methods 0.000 claims abstract description 34
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000012546 transfer Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000007738 vacuum evaporation Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811189521.0A CN109273542A (zh) | 2018-10-12 | 2018-10-12 | 铜铟镓硒太阳能电池吸收层、制备方法及太阳能电池 |
Applications Claiming Priority (1)
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CN201811189521.0A CN109273542A (zh) | 2018-10-12 | 2018-10-12 | 铜铟镓硒太阳能电池吸收层、制备方法及太阳能电池 |
Publications (1)
Publication Number | Publication Date |
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CN109273542A true CN109273542A (zh) | 2019-01-25 |
Family
ID=65197150
Family Applications (1)
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CN201811189521.0A Pending CN109273542A (zh) | 2018-10-12 | 2018-10-12 | 铜铟镓硒太阳能电池吸收层、制备方法及太阳能电池 |
Country Status (1)
Country | Link |
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CN (1) | CN109273542A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110323293A (zh) * | 2019-05-06 | 2019-10-11 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种铜铟镓硒薄膜太阳能电池 |
CN110323292A (zh) * | 2019-05-06 | 2019-10-11 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种铜铟镓硒薄膜太阳能电池吸收层及其制备方法 |
CN112086538A (zh) * | 2019-06-12 | 2020-12-15 | 领凡新能源科技(北京)有限公司 | 太阳能电池的光吸收层的制备方法和太阳能电池 |
-
2018
- 2018-10-12 CN CN201811189521.0A patent/CN109273542A/zh active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110323293A (zh) * | 2019-05-06 | 2019-10-11 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种铜铟镓硒薄膜太阳能电池 |
CN110323292A (zh) * | 2019-05-06 | 2019-10-11 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种铜铟镓硒薄膜太阳能电池吸收层及其制备方法 |
CN110323293B (zh) * | 2019-05-06 | 2024-04-19 | 中建材玻璃新材料研究院集团有限公司 | 一种铜铟镓硒薄膜太阳能电池 |
CN112086538A (zh) * | 2019-06-12 | 2020-12-15 | 领凡新能源科技(北京)有限公司 | 太阳能电池的光吸收层的制备方法和太阳能电池 |
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Applicant before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210407 Address after: 518054 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Applicant after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
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TA01 | Transfer of patent application right |
Effective date of registration: 20210915 Address after: 201203 3rd floor, no.665 Zhangjiang Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant after: Shanghai zuqiang Energy Co.,Ltd. Address before: 518054 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Applicant before: Shenzhen Zhengyue development and Construction Co.,Ltd. |