CN109231157A - Pressure and displacement integrated form MEMS sensor of the four beam diaphragms in conjunction with concentric cylinder - Google Patents
Pressure and displacement integrated form MEMS sensor of the four beam diaphragms in conjunction with concentric cylinder Download PDFInfo
- Publication number
- CN109231157A CN109231157A CN201811318987.6A CN201811318987A CN109231157A CN 109231157 A CN109231157 A CN 109231157A CN 201811318987 A CN201811318987 A CN 201811318987A CN 109231157 A CN109231157 A CN 109231157A
- Authority
- CN
- China
- Prior art keywords
- pressure
- upper substrate
- cylinder
- basal layer
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000007787 solid Substances 0.000 claims abstract description 18
- 230000035945 sensitivity Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000004458 analytical method Methods 0.000 claims description 5
- 238000009530 blood pressure measurement Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 230000013011 mating Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 210000002683 foot Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
Abstract
The pressure and displacement integrated form MEMS sensor of a kind of four beams diaphragm in conjunction with concentric cylinder, the lower substrate including upper substrate and matched connection；Lower substrate includes lower substrate basal layer, and lower substrate metal ohmic circuit layer is equipped with above lower substrate basal layer, and the middle part of lower substrate basal layer is equipped with lower part solid cylinder, and the edge above lower substrate basal layer is equipped with surrounding supporting structure；Upper substrate includes upper substrate basal layer, upper substrate insulating layer is equipped with above upper substrate basal layer, the four beam diaphragm structure of top that upper substrate insulating layer is equipped with upper substrate metal ohmic contact circuit and is made of four beams and central upper portion diaphragm, beam are equipped with pressure drag item；It is connected with thin-walled cylinder below central upper portion diaphragm, thin-walled cylinder covers outside the solid cylinder of lower part, connection below surrounding supporting structure and upper substrate basal layer；The present invention realizes the integral measuring of pressure and displacement, has many advantages, such as that integrated level is good, measurement sensitivity is high.
Description
Technical field
The invention belongs to MEMS sensor technical fields, and in particular to pressure of the four beam diaphragms of one kind in conjunction with concentric cylinder
With displacement integrated form MEMS sensor.
Background technique
Aerospace, military affairs, automobile etc. industry and military field in, it is often necessary to while measurement structure pressure and
The parameters such as the displacement generated due to compression.And in such applications, it is right other than the accurate real-time measurement of energy goes out these parameters
The micromation of sensor, integrated, multifunction require also more more and more urgent.In prior art structure, due to testing principle
Difference, MEMS pressure sensor and displacement sensor are usually discrete, to increase cost of manufacture and the space of chip
Size.Integrated sensor based on MEMS technology interior in a limited space can realize such as pressure, displacement, temperature, acceleration
Etc. multi-parameters integral measuring, the MEMS integrated sensor type reported at present is less, and it is most of belong to be simply integrated,
Will each measured physical quantity according to corresponding measuring principle independent design structure, then these independent functional units processing are existed
Different location in same substrate.For example left one side of something of the same sensor base is made into pressure sensing cell, right one side of something is done
At acceleration detecting unit, although such simple integrated size and cost of manufacture that can reduce sensor to a certain extent,
But do not make full use of the cross reference between structure corresponding to each physical quantity principle, i.e., it is that each detection is not former
Corresponding structural relation is managed using upper, thus belongs to simple Embedded, the integrated level of MEMS sensor needs further to be mentioned
It is high.
Summary of the invention
In order to overcome the disadvantages of the above prior art, the purpose of the present invention is to provide a kind of four beam diaphragms and concentric cylinders
In conjunction with pressure and displacement integrated form MEMS sensor, realize the integrated detection of pressure and displacement, have small in size, cost
It is low, the advantages that integrated level is good, and measurement sensitivity is high.
In order to achieve the above object, the technical scheme adopted by the invention is as follows:
The pressure and displacement integrated form MEMS sensor of a kind of four beams diaphragm in conjunction with concentric cylinder, including upper substrate and
The lower substrate of matched connection；
The lower substrate includes lower substrate basal layer 100, and lower substrate basal layer 100 is equipped with lower substrate above
The middle part of metal ohmic circuit layer 101, lower substrate basal layer 100 is equipped with lower part solid cylinder 102, lower substrate basal layer
The edge of 100 tops is additionally provided with surrounding supporting structure 103；
The upper substrate includes upper substrate basal layer 300, and upper substrate basal layer 300 is equipped with upper substrate above
Insulating layer 301, upper substrate insulating layer 301 are equipped with upper substrate metal ohmic contact circuit 303 and by four 400 Hes of beam
The four beam diaphragm structure of top that central upper portion diaphragm 401 is constituted, four beams 400 are equipped with pressure drag item 302, pressure drag item 302, top
Substrate metal Ohmic contact circuit 303 and four beam diaphragm structure of top constitute piezoresistive pressure sensor；
It is connected with thin-walled cylinder 304 below the middle part of central upper portion diaphragm 401,304 sets of thin-walled cylinder in lower part filled circles
Outside column 102, connected below surrounding supporting structure 103 and upper substrate basal layer 300, it is solid by thin-walled cylinder 304 and lower part
102 axial relative movement of cylinder constitutes changed area concentric cylinder capacitive displacement transducer.
Four pressure drag items 302 are designed four 400 roots of beam, to obtain maximum pressure detecting sensitivity.
Substrate articulamentum up and down is bonded together to form below the surrounding supporting structure 103 and upper substrate basal layer 300
200。
On the upper substrate insulating layer 301, by doping and etching technics, formed pair four 400 roots of beam
Claim the pressure drag item 302 of distribution, and by electron beam evaporation or sputtered metal film technique, the table on upper substrate insulating layer 301
Face forms the Wheatstone bridge of upper substrate metal ohmic contact circuit 303, and each pressure drag item 302 is interconnected to constitute complete letter
Number output circuit.
The center of circle of the thin-walled cylinder 304 and the center of central upper portion diaphragm 401 need to guarantee that centering is overlapped.
The thin-walled cylinder 304 guarantees thin-walled cylinder 304 as much as possible using the high-precision processing technology of laser boring
Rule.
The axial height H1 of the thin-walled cylinder 304 should be slightly less than the axial height H2 of lower part solid cylinder 102, and full
The size of the difference in height Dh=H2-H1, Dh of both foots are answered according to the displacement of set flowmeter sensor and pressure measurement range and structure
Power Limit Analysis is comprehensive to be determined.
The beneficial effects of the present invention are: MEMS pressure sensor and MEMS displacement sensor are collected from structure
At can farthest reduce chip area, to reduce the cost of manufacture of chip；The envelope of entire chip can disposably be completed
Dress, significantly reduces the cost of chip manufacture.The thin-walled cylinder of four beam diaphragm structure of top and cylinder capacitor in the present invention is one
It is body concentric, therefore, the symmetric stability of the four beam diaphragm structures on top ensure that thin-walled cylinder detection displacement process in, diameter
It even is eliminated to displacement minimum, to ensure that the displacement sensor linearity and sensitive while realizing two kinds of physical quantities
Degree, and the piezoresistive pressure-measuring structure on top has plane stress concentration effect, compared with general structure, this diaphragm exists
It can produce biggish stress when by minute-pressure to concentrate, so that sensor sensitivity with higher when measuring minute-pressure, and energy
It is non-linear to solve the measurement that general structure diaphragm is generated when very thin due to membrane stress and bending stress.And sensor top thin-walled
Axial difference in height Dh between cylinder and lower cylindrical plays nature position-limiting action, with 3 times or more of anti-overload ability, avoids
Lead to sensor failure due to outranging work.
Detailed description of the invention
Fig. 1 is overall structure diagram of the embodiment of the present invention.
Fig. 2 is the structural schematic diagram of lower substrate of the embodiment of the present invention.
Fig. 3 is the structural schematic diagram of upper substrate of the embodiment of the present invention.
Specific embodiment
The present invention will be described in further detail with reference to the accompanying drawings and embodiments.It should be appreciated that described herein
The specific embodiments are only for explaining the present invention, is not intended to limit the present invention.
Referring to FIG. 1, FIG. 2 and FIG. 3, pressure and displacement integrated form MEMS sensing of a kind of four beams diaphragm in conjunction with concentric cylinder
Device, overall structure are in cubic shaped, the lower substrate including upper substrate and matched connection；
The lower substrate includes lower substrate basal layer 100, and lower substrate basal layer 100 is equipped with lower substrate above
The middle part of metal ohmic circuit layer 101, lower substrate basal layer 100 is equipped with lower part solid cylinder 102, lower substrate basal layer
The edge of 100 tops is additionally provided with surrounding supporting structure 103；
The upper substrate includes upper substrate basal layer 300, and upper substrate basal layer 300 is equipped with upper substrate above
Insulating layer 301, upper substrate insulating layer 301 are equipped with upper substrate metal ohmic contact circuit 303 and by four 400 Hes of beam
The four beam diaphragm structure of top that central upper portion diaphragm 401 is constituted, four beams 400 are equipped with pressure drag item 302, pressure drag item 302, top
Substrate metal Ohmic contact circuit 303 and four beam diaphragm structure of top constitute piezoresistive pressure sensor；
It is connected with thin-walled cylinder 304 below the middle part of central upper portion diaphragm 401,304 sets of thin-walled cylinder in lower part filled circles
Outside column 102, substrate articulamentum 200 up and down is bonded together to form below surrounding supporting structure 103 and upper substrate basal layer 300, is passed through
Thin-walled cylinder 304 and 102 axial relative movement of lower part solid cylinder constitute changed area concentric cylinder capacitive displacement transducer.
For the present embodiment, known by modeling Analysis, when ambient pressure acts on central upper portion diaphragm 401
When, four beams 400 can generate amount of deflection, and simulation result shows that the Root Stress of four beams 400 reaches maximum.Therefore, this implementation
Example according to be pressurized when four beams 400 ess-strain direction, in conjunction with the horizontal and vertical piezoresistive effect of four, top pressure drag item 302
Change principle, it is sensitive to obtain maximum pressure detecting by four, top, 302 symmetric design of pressure drag item four 400 roots of beam
Degree.When four beams 400 are when the effect of being under pressure generates amount of deflection, four pressure drag items 302 disposed thereon are due to piezoresistive effect
It influencing, resistance value can change, thus break the balance of 303 Wheatstone bridge of upper substrate metal ohmic contact circuit,
The measurement of output voltage completion pressure.
Known by modeling Analysis, when ambient pressure acts on central upper portion diaphragm 401, four 400 meetings of beam
Generate amount of deflection, and 401 even of central upper portion diaphragm generate displacement along pressure direction, i.e. central upper portion diaphragm 401
Obvious deflection is not generated.Based on this, the thin-walled cylinder 304 connecting with central upper portion diaphragm 401 can generate axial displacement, with lower part
Solid cylinder 102 forms axial relative movement, generates the variation of cylindrical capacitor output capacitance, reflects that sensor detects with this
Displacement.
On the upper substrate insulating layer 301, by doping and etching technics, formed pair four 400 roots of beam
Claim the pressure drag item 302 of distribution, and by electron beam evaporation or sputtered metal film technique, the table on upper substrate insulating layer 301
Face forms the Wheatstone bridge of upper substrate metal ohmic contact circuit 303, and each pressure drag item is interconnected to constitute complete signal
Output circuit.
The center of circle of the thin-walled cylinder 304 and the center of central upper portion diaphragm 401 need to guarantee that centering is overlapped, therefore to light
Scribe the more demanding of version and etching technics.The purpose designed in this way is four beams when guaranteeing that central upper portion diaphragm 401 is pressurized
The amount of deflection of 400 generations is uniform and equal, i.e., central upper portion diaphragm 401 is maintained in horizontal X Y plane and does not glance off, and only generates
Axial displacement can be ignored with this to guarantee that the presence of thin-walled cylinder 304 does not influence or influence very little to beam film piezo-resistive arrangement.
The thin-walled cylinder 304 uses laser boring high-precision processing technology, guarantees that thin-walled cylinder 304 is advised as much as possible
Then.
The axial height H1 of the thin-walled cylinder 304 should be slightly less than the axial height H2 of lower part solid cylinder 102, not
Be under pressure and displacement act on when, relative motion does not occur for thin-walled cylinder 304 and 102 structure of lower part solid cylinder, once have position
When shifting acts on, thin-walled cylinder 304 can be moved down axially, and solid cylinder 102 structure in lower part is stationary, therefore at the beginning, the two
Height both must satisfy the axial height H1 of thin-walled cylinder 304 and be slightly less than the height H2 of lower part solid cylinder 102, and meet
Difference in height Dh=H2-H1, the size of Δ h is according to the displacement of set flowmeter sensor and pressure measurement range and the structural stress limit
Analysis integrated determination.
The working principle of the invention is: MEMS pressure sensor and MEMS displacement sensor are collected from structure
At can farthest reduce chip area, to reduce chip manufacturing cost；By once encapsulating, entire core can be completed
The encapsulation of piece reduces the cost of chip package.When the environment locating for the sensor has pressure and displacement, four beams 400 and in
Piezoresistive pressure sensor structure is collectively formed in heart diaphragm 401, detects pressure size and passes through substrate metal Ohmic contact circuit
The corresponding voltage signal of 303 outputs；Center diaphragm 401 can generate displacement under pressure simultaneously, and drive thin-walled cylinder 304
Axial movement constitutes changed area displacement sensor with the solid cylinder 102 of lower substrates, and since top is four beam diaphragm knots
Structure, therefore, symmetrical configuration stability ensure that thin-walled cylinder 304 in axial displacement process, and radial displacement is minimum even to disappear
It removes, to ensure that the displacement sensor linearity and sensitivity while realizing two kinds of physical quantities.And the pressure drag on top
Formula pressure measurement structure has plane stress concentration effect, and compared with general structure, this diaphragm is when by minute-pressure
Biggish stress is generated to concentrate, so that sensor sensitivity with higher when measuring minute-pressure, and can solve general diaphragm knot
The measurement that structure is generated when very thin due to membrane stress and bending stress is non-linear.Thin-walled cylinder 304 and lower part solid cylinder 102 it
Between axial difference in height Δ h play position-limiting action, avoid leading to sensor failure due to outranging work.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Any modifications, equivalent replacements, and improvements etc. done within mind and principle, should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of pressure of four beam diaphragms with concentric cylinder in conjunction with and be displaced integrated form MEMS sensor, including upper substrate and with
Mating connection lower substrate, it is characterised in that:
The lower substrate includes lower substrate basal layer (100), and lower substrate basal layer (100) is equipped with lower substrate above
The middle part of metal ohmic circuit layer (101), lower substrate basal layer (100) is equipped with lower part solid cylinder (102), lower substrate base
Edge above bottom (100) is additionally provided with surrounding supporting structure (103)；
The upper substrate includes upper substrate basal layer (300), and upper substrate basal layer (300) is equipped with upper substrate above
Insulating layer (301), upper substrate insulating layer (301) are equipped with upper substrate metal ohmic contact circuit (303) and by four
The four beam diaphragm structure of top that beam (400) and central upper portion diaphragm (401) are constituted, four beams (400) are equipped with pressure drag item
(302), pressure drag item (302), upper substrate metal ohmic contact circuit (303) and four beam diaphragm structure of top constitute pressure resistance type
Pressure sensor；
It is connected with thin-walled cylinder (304) below the middle part of central upper portion diaphragm (401), thin-walled cylinder (304) covers solid in lower part
Outside, connection, passes through thin-walled cylinder (304) cylinder (102) below surrounding supporting structure (103) and upper substrate basal layer (300)
Changed area concentric cylinder capacitive displacement transducer is constituted with lower part solid cylinder (102) axial relative movement.
2. pressure and displacement integrated form MEMS sensing of a kind of four beams diaphragm according to claim 1 in conjunction with concentric cylinder
Device, it is characterised in that: four pressure drag items (302) are designed four beam (400) roots, to obtain maximum pressure detecting
Sensitivity.
3. pressure and displacement integrated form MEMS sensing of a kind of four beams diaphragm according to claim 1 in conjunction with concentric cylinder
Device, it is characterised in that: lining up and down is bonded together to form below the surrounding supporting structure (103) and upper substrate basal layer (300)
Bottom articulamentum (200).
4. pressure and displacement integrated form MEMS sensing of a kind of four beams diaphragm according to claim 1 in conjunction with concentric cylinder
Device, it is characterised in that: on the upper substrate insulating layer (301), by doping and etching technics, in four beams (400)
Root forms symmetrical pressure drag item (302), and by electron beam evaporation or sputtered metal film technique, exhausted in upper substrate
Edge layer (301) upper surface forms the Wheatstone bridge of upper substrate metal ohmic contact circuit (303), by each pressure drag item (302)
It is interconnected to constitute complete signal output circuit.
5. pressure and displacement integrated form MEMS sensing of a kind of four beams diaphragm according to claim 1 in conjunction with concentric cylinder
Device, it is characterised in that: the axis of the thin-walled cylinder (304) and the axis of top diaphragm (401) need to guarantee that centering is overlapped.
6. pressure and displacement integrated form MEMS sensing of a kind of four beams diaphragm according to claim 1 in conjunction with concentric cylinder
Device, it is characterised in that: the thin-walled cylinder (304) uses laser boring high-precision processing technology, guarantees thin-walled cylinder (304)
It is regular as much as possible.
7. pressure and displacement integrated form MEMS sensing of a kind of four beams diaphragm according to claim 1 in conjunction with concentric cylinder
Device, it is characterised in that: the axial height H1 of the thin-walled cylinder (304) should be slightly less than the axial direction of lower part solid cylinder (102)
Height H2, and the size of the difference in height Dh=H2-H1, Dh both met is according to the displacement and pressure measurement amount of set flowmeter sensor
Journey and the comprehensive determination of structural stress Limit Analysis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811318987.6A CN109231157B (en) | 2018-11-07 | 2018-11-07 | Pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811318987.6A CN109231157B (en) | 2018-11-07 | 2018-11-07 | Pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109231157A true CN109231157A (en) | 2019-01-18 |
| CN109231157B CN109231157B (en) | 2024-04-09 |
Family
ID=65077227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811318987.6A Active CN109231157B (en) | 2018-11-07 | 2018-11-07 | Pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109231157B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110411615A (en) * | 2019-07-01 | 2019-11-05 | 杭州电子科技大学 | A kind of MEMS touch sensor structure of high sensitivity |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010056825A (en) * | 1999-12-17 | 2001-07-04 | 서희돈 | Piezoresistor type sensor structure with minimized other-axes sensitivity and method for fabricating the same |
| CN102636298A (en) * | 2012-03-16 | 2012-08-15 | 西安交通大学 | Beam-film four-land structured micro-pressure high-overload sensor chip |
| US20150241465A1 (en) * | 2012-12-06 | 2015-08-27 | Murata Manufacturing Co., Ltd. | Piezoresistive mems sensor |
| CN107941407A (en) * | 2017-11-19 | 2018-04-20 | 东北大学 | A kind of micro-voltage high-overload sensor chip |
| CN209177990U (en) * | 2018-11-07 | 2019-07-30 | 西安交通大学 | The pressure and displacement integrated form MEMS sensor structure of four beam diaphragms and concentric cylinder |
-
2018
- 2018-11-07 CN CN201811318987.6A patent/CN109231157B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010056825A (en) * | 1999-12-17 | 2001-07-04 | 서희돈 | Piezoresistor type sensor structure with minimized other-axes sensitivity and method for fabricating the same |
| CN102636298A (en) * | 2012-03-16 | 2012-08-15 | 西安交通大学 | Beam-film four-land structured micro-pressure high-overload sensor chip |
| US20150241465A1 (en) * | 2012-12-06 | 2015-08-27 | Murata Manufacturing Co., Ltd. | Piezoresistive mems sensor |
| CN107941407A (en) * | 2017-11-19 | 2018-04-20 | 东北大学 | A kind of micro-voltage high-overload sensor chip |
| CN209177990U (en) * | 2018-11-07 | 2019-07-30 | 西安交通大学 | The pressure and displacement integrated form MEMS sensor structure of four beam diaphragms and concentric cylinder |
Non-Patent Citations (1)
| Title |
|---|
| 郭成锐;林鸣谢;: "压阻式MEMS压力传感器的原理与分析", 电子质量, no. 09 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110411615A (en) * | 2019-07-01 | 2019-11-05 | 杭州电子科技大学 | A kind of MEMS touch sensor structure of high sensitivity |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109231157B (en) | 2024-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101672710B (en) | Beam-film combined micro-pressure sensor | |
| US7992443B2 (en) | Sensor element for capacitive differential-pressure sensing | |
| CN103941041A (en) | Single-mass-block three-axis MEMS accelerometer with three frame structures | |
| CN212807437U (en) | Core body of differential pressure sensor | |
| CN103105248A (en) | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor | |
| CN203178006U (en) | Pressure transducer packaging structure | |
| CN114295262A (en) | Island membrane structure silicon piezoresistive sensor device | |
| CN102928131A (en) | Quartz resonance beam type micro-pressure sensor chip | |
| CN209177990U (en) | The pressure and displacement integrated form MEMS sensor structure of four beam diaphragms and concentric cylinder | |
| CN109231157A (en) | Pressure and displacement integrated form MEMS sensor of the four beam diaphragms in conjunction with concentric cylinder | |
| CN102168994B (en) | Silicon capacitance differential pressure transducer with multi-parameter and compensation method of static pressure influence | |
| CN117268600A (en) | MEMS pressure sensor chip and preparation method thereof | |
| CN109655181B (en) | A kind of sensor and preparation method thereof | |
| CN209102262U (en) | A kind of anti high overload bellow-type ceramic resistive type pressure sensor | |
| CN209470807U (en) | A kind of capacitive films vacuum meter | |
| CN103075951A (en) | Three-dimensional micro touch probe based on capacitive sensor array | |
| CN202974174U (en) | Three-dimensional micro-contact-type measuring head based on capacitive sensor array | |
| CN107843385A (en) | A kind of alundum (Al2O3) film vacuum is regulated | |
| Achouch et al. | 3D printed capacitive relative pressure sensor for use in a CAE environment | |
| CN210893522U (en) | MEMS pressure sensor | |
| CN201060079Y (en) | Intelligent differential pressure cell | |
| CN207675357U (en) | A kind of pressure-detecting device based on synchro-resonance | |
| CN201266126Y (en) | Double bridge type thick film pressure transducer | |
| CN201355291Y (en) | Digital display type pressure transmitter with two-way switching value output | |
| CN110082011A (en) | A kind of multistage dynamometry location displacement sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |