CN109655181B - A kind of sensor and preparation method thereof - Google Patents
A kind of sensor and preparation method thereof Download PDFInfo
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- CN109655181B CN109655181B CN201910192142.5A CN201910192142A CN109655181B CN 109655181 B CN109655181 B CN 109655181B CN 201910192142 A CN201910192142 A CN 201910192142A CN 109655181 B CN109655181 B CN 109655181B
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Abstract
The present embodiments relate to a kind of sensor and preparation method thereof, the sensor includes MEMS sensor chip, pressure conduction component, sensor chip accommodating body and elastic piece；The sensor chip accommodating body has open end for accommodating the MEMS sensor chip；There is circular hole, elastic piece is fixedly connected on the open end of sensor chip accommodating body in the middle part of the elastic piece；The pressure conduction component is used to external pressure being transferred to presser sensor beam, and one end is set on the location hole or locating slot, and the other end connects with the circular hole in the middle part of elastic piece.The sensor can directly detect external pressure, be not necessarily to medium, expand application scenarios, detection is sensitive, and accurately, packaging technology is simple.
Description
Technical Field
The invention relates to the technical field of Micro-Electro-Mechanical Systems (MEMS), in particular to a sensor and a preparation method thereof.
Background
The pressure sensor is a semiconductor thin film element, and has the advantages of small volume, light weight, high precision, high sensitivity and low cost. In the prior art, the MEMS pressure sensor mainly has two types, namely a capacitive type and a piezoresistive type, wherein the piezoresistive type pressure sensor forms a wheatstone bridge (fig. 1a is a schematic diagram of the wheatstone bridge principle) by manufacturing a piezoresistor on a silicon pressure sensitive membrane, when external pressure acts on the silicon pressure sensitive membrane, the membrane deforms, so that the silicon material lattice compresses and stretches, the resistance value of the piezoresistor changes, and the external pressure can be detected through the wheatstone bridge.
Fig. 1b is a schematic structural diagram of a piezoresistive MEMS pressure sensor chip in the prior art, which includes a first glass body 1, a silicon pressure-sensitive diaphragm 2, and a second glass body 3, wherein a piezoresistor 4 is fabricated on an upper surface of the silicon pressure-sensitive diaphragm 2 to form a wheatstone bridge, a vacuum cavity 5 is formed between the first glass body 1 and the upper surface of the silicon pressure-sensitive diaphragm 2, a pressure-inducing cavity 6 communicated with an external environment is formed between a second surface of the silicon pressure-sensitive diaphragm 2 opposite to the upper surface and the second glass body 3, and when external gas or liquid acts on the silicon pressure-sensitive diaphragm 2 through the pressure-inducing cavity 6, the diaphragm is deformed to change a resistance value of the piezoresistor, so that the bridge balance is destroyed, and a voltage signal proportional to the gas pressure is output, thereby being capable of detecting the external pressure.
The piezoresistive MEMS pressure sensor has obvious defects that the detection depends on fluid media such as gas and liquid, the detection is actually the force exerted by the fluid such as gas or liquid on the silicon pressure sensitive membrane, the detected pressure is actually the pressure of the gas or liquid, but the external force directly acting on the silicon pressure sensitive membrane itself is not the external force, and the piezoresistive MEMS pressure sensor can only be applied to a scene with the fluid media such as gas and liquid, and when the gas or liquid is not used as the medium, the pressure sensor cannot be applied, and the application scene is greatly limited.
Disclosure of Invention
In order to solve the above technical problem, an embodiment of the present invention provides a sensor, including an MEMS force sensor chip, a pressure conducting component, a sensor chip accommodating body, and an elastic sheet; the chip comprises a substrate, wherein a groove is formed in the upper surface of the substrate, and a pressure sensitive layer is arranged on the upper surface of the substrate; the pressure sensitive layer comprises a frame and a pressure sensitive beam; the frame is partially or completely arranged around the groove, the pressure sensitive beam is arranged above the groove, and each end part of the pressure sensitive beam is connected with the frame; the upper surface of the pressure sensitive layer is provided with 2 or 4 piezoresistors, at least one part of each piezoresistor is positioned on the pressure sensitive beam, the 2 piezoresistors are connected to form a Wheatstone bridge half-bridge, or the 4 piezoresistors are connected to form a Wheatstone bridge, and the middle part of the pressure sensitive beam is provided with a positioning hole or a positioning groove which is used for positioning the pressure conducting component and has a circular cross section; the sensor chip accommodating body is used for accommodating the MEMS force sensor chip and is provided with an opening end; the elastic sheet is fixedly connected with the opening end of the sensor chip accommodating body, the middle part of the elastic sheet is provided with a round hole, the round hole corresponds to the positioning hole or the positioning groove, and the inner edge of the round hole is connected with the pressure transmission component; the pressure conduction component is used for transmitting external pressure to the pressure sensitive beam, the cross section of the pressure conduction component is a circular hard structure body, one end of the pressure conduction component is arranged on the positioning hole or the positioning groove, the other end of the pressure conduction component is bonded at the round hole of the elastic sheet, the maximum diameter D of the pressure conduction component is larger than the diameter L of the round hole, and the relation between the maximum diameter D of the pressure conduction component and the inner diameter D of the top opening of the positioning hole or the positioning groove is that D < D < 5D.
Further, the pressure sensitive beam is in an axial symmetry structure or a central symmetry structure.
Further, the pressure sensitive beam is composed of a first pressure sensitive beam and a second pressure sensitive beam which are connected with each other at the middle part.
Furthermore, the first pressure sensitive beam and the second pressure sensitive beam are mutually perpendicular to form a cross-shaped pressure sensitive beam; or the first pressure sensitive beam and the second pressure sensitive beam are parallel to each other and connected through the pressure sensitive cross beam to form an H-shaped pressure sensitive beam; or the first pressure sensitive beam and the second pressure sensitive beam intersect in a non-perpendicular mode to form an X-shaped pressure sensitive beam.
Furthermore, in the cross-shaped pressure sensitive beam or the X-shaped pressure sensitive beam, the first pressure sensitive beam and the second pressure sensitive beam have the same length, and the geometric center of the first pressure sensitive beam is superposed with the geometric center of the second pressure sensitive beam to form the geometric center of the pressure sensitive beam; or,
in the H-shaped pressure sensitive beam, a central line of a pressure sensitive beam connecting a first pressure sensitive beam and a second pressure sensitive beam passes through the geometric center of the first pressure sensitive beam and the geometric center of the second pressure sensitive beam, and the geometric center of the pressure sensitive beam forms the center of the pressure sensitive beam.
Further, the center line of the groove passes through the geometric center of the pressure sensitive beam.
Further, the piezoresistors are respectively arranged at the positions where the end parts of the pressure sensitive beam are connected with the frame of the pressure sensitive layer.
Further, the 2 piezoresistors are symmetrically distributed, or the 4 piezoresistors are centrosymmetrically distributed.
Furthermore, the groove is square, the frame is arranged around the groove and is square, the frame is provided with 4 inner edges, and the 4 inner edges form a square; the pressure sensitive beam consists of a straight strip-shaped first pressure sensitive beam and a straight strip-shaped second pressure sensitive beam which are mutually connected at the middle part and have the same width and thickness, and the first pressure sensitive beam and the second pressure sensitive beam are mutually vertical to form a cross-shaped pressure sensitive beam; two ends of the first pressure sensitive beam are respectively connected with the middle parts of 2 opposite inner edges of the frame of the pressure sensitive layer, and two ends of the second pressure sensitive beam are connected with the middle parts of the other 2 opposite inner edges of the frame of the pressure sensitive layer; the upper surfaces of the first pressure sensitive beam and the second pressure sensitive beam, which are close to 4 positions connected with the frame, are respectively provided with 1 piezoresistor, the centers of the 4 piezoresistors are symmetrically distributed, the middle part of the cross-shaped pressure sensitive beam is provided with a positioning hole or a positioning groove, and the central shaft of the positioning hole or the positioning groove passes through the geometric center of the cross-shaped pressure sensitive beam.
Furthermore, the substrate is an SOI substrate, and the pressure sensitive layer is made of monocrystalline silicon.
Further, the elastic sheet is a stainless steel elastic sheet.
Furthermore, the elastic sheet is provided with an outer frame and an inner ring connected with the outer frame, and the inner ring surrounds a round hole for limiting the elastic sheet; the shape of the outer edge of the outer frame is matched with the opening shape of the sensor chip accommodating body, and the inner ring is connected with the outer frame through a plurality of connecting arms distributed on the outer side of the inner ring
Further, the connecting arms are evenly distributed between the outer side of the inner circular ring and the inner side of the outer frame.
Further, the connecting arm is a straight strip-shaped arm or a curved arm.
Furthermore, the curved arm is composed of a first straight arm, a sector annular arm and a second straight arm which are sequentially connected, the sector annular arm is a part of a circular ring coaxial with the inner circular ring, the outer end of the first straight arm is connected with the outer edge of the inner circular ring, and the outer end of the second straight arm is connected with the outer frame.
Further, 2/3D < L < D.
Further, 1.1D < 2D.
Further, the pressure conduction part is a hard round ball.
The embodiment of the invention also provides a preparation method of the sensor, which comprises the following steps:
s1, providing an elastic sheet with a preset structure, a pressure conduction component and the MEMS force sensor chip, wherein the force sensor chip is arranged in an array;
s2, using a plastic package mold to seal the force sensor chips arranged in the display mode through plastic, and enabling the force sensor chips to be contained in a sensor chip containing body;
s3, cutting the plastic-packaged force sensor chips arranged in an array to form a single plastic-packaged force sensor chip;
s4, adhering one end of the pressure conduction component to the round hole of the elastic sheet;
s5, placing the other end of the pressure conduction component adhered with the elastic sheet on the positioning hole or the positioning groove of the force sensor chip;
and S6, adhering the opening end of the sensor chip accommodating body and the elastic sheet.
The embodiment of the invention has the following beneficial effects: the force sensor provided by the embodiment of the invention does not rely on gas or liquid as a medium, can directly measure the external force applied to the sensitive beam, and greatly expands the application scene of the sensor; the volume is small, the cross-sectional area can be as small as 1mm by 1mm, and the pressure sensors can be arranged into a force sensor array to measure the pressure distribution at different positions; the minimum measuring range can reach 0-4mN, the detection sensitivity is high, the packaging process is simple, the cost is low, the mass production is easy, the consistency is good, and the calibration and calibration are easy.
Drawings
FIG. 1a is a schematic diagram of a Wheatstone bridge of the prior art;
FIG. 1b is a schematic diagram of a MEMS pressure sensor chip of the prior art;
fig. 2a is a schematic top view of a force sensor chip according to an embodiment of the present invention;
FIG. 2b is a cross-sectional view taken along line A-A' of FIG. 2 a;
fig. 3a, 3b, 3c, 3d are schematic views showing the structure of the product obtained at each step of the method for manufacturing a force sensor according to embodiment 2 of the present invention;
FIG. 4 is a schematic diagram of a bonding structure of a force sensor die, an elastic component and a pressure conducting component in a packaged MEMS force sensor die according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a stainless steel elastic sheet according to an embodiment of the present invention, in which a hatched portion represents a hollow portion, and a portion surrounded by the inner ring 42 is a circular hole in the middle of the elastic sheet formed by hollowing;
fig. 6 is a photograph of a sensor encapsulating a MEMS force sensor chip according to an embodiment of the present invention, with a stainless steel ball in the center.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings. Those skilled in the art will appreciate that the present invention is not limited to the drawings and the following examples.
EXAMPLE 1 force sensor
The embodiment of the invention provides a force sensor, which comprises an MEMS force sensor chip, wherein the chip comprises a substrate 10, a groove 11 is formed in the upper surface of the substrate 10, and a pressure sensitive layer 20 is arranged on the upper surface of the substrate 10.
The pressure sensitive layer 20 includes a frame 21 and a pressure sensitive beam 22. The frame 21 at least partially surrounds, preferably completely surrounds, the groove 11, the pressure sensitive beam 22 is formed above the groove 11 by hollowing out the pressure sensitive layer 20 above the groove 11, the pressure sensitive beam 22 is arranged in a suspended manner, the lower surface of the pressure sensitive beam 22 has a certain distance from the bottom of the groove 11, and each end of the pressure sensitive beam 22 is respectively connected with the frame 21 of the pressure sensitive layer 20.
The pressure sensitive beam 22 is a pressure sensitive beam 22 with an axisymmetric structure or a centrosymmetric structure; preferably, the pressure sensitive beam 22 is formed by a first pressure sensitive beam and a second pressure sensitive beam which are connected with each other at the middle, preferably, the length of the first pressure sensitive beam is equal to the length of the second pressure sensitive beam, and preferably, the 4 connecting portions between the first pressure sensitive beam and the frame 21 are symmetrically distributed or centrosymmetrically distributed about an axis which is vertical to and passes through the geometric center of the pressure sensitive beam 22.
The upper surface of the pressure sensitive layer 20 is provided with 4 piezoresistors 23, at least one part of each piezoresistor 23 is positioned on the pressure sensitive beam 22, preferably completely positioned on the pressure sensitive beam 22, the 4 piezoresistors 23 are connected to form a wheatstone bridge, and the 4 piezoresistors 23 are distributed in central symmetry or in axial symmetry about an axis which is vertical and passes through the geometric center of the pressure sensitive beam 22. More preferably, 4 piezoresistors are respectively arranged at each end position of the pressure sensitive beam 22 connected with the frame 21 of the pressure sensitive layer 20.
In another embodiment, the pressure sensitive layer 20 has 2 piezoresistors 23 on its upper surface, at least a portion of each piezoresistor 23 is located on the pressure sensitive beam 22, preferably completely located on the pressure sensitive beam 22, the 2 piezoresistors 23 are connected to form a half bridge of a wheatstone bridge, and the 2 piezoresistors 23 are distributed in axial symmetry. More preferably, 2 piezoresistors are respectively arranged at each end position of the pressure sensitive beam 22 connected with the frame 21 of the pressure sensitive layer 20.
Preferably, the pressure sensitive beam 22 is further provided with a positioning portion 220 for positioning the pressure conducting member 50.
More preferably, the positioning part 220 is located at the center of the pressure sensitive beam 22.
Next, referring to fig. 2a and 2b, a detailed description will be given of an embodiment of the force sensor according to the present embodiment.
A force sensor comprises an MEMS force sensor chip, wherein the chip comprises an SOI (Silicon-On-Insulator) substrate 10, a square groove 11 is formed in the middle of the upper surface of the SOI substrate 10, a pressure sensitive layer 20 is arranged On the upper surface of the SOI substrate 10, and the pressure sensitive layer 20 is made of monocrystalline Silicon.
The pressure sensitive layer 20 comprises a frame 21 and a cross-shaped pressure sensitive beam 22; the frame 21 is arranged around the groove 11 and is in a shape of a square, the frame 21 is provided with 4 inner edges, and the 4 inner edges form a square; the pressure sensitive layer 20 of cross pressure sensitive roof beam 22 through fretwork recess 11 top form in the top of recess 11, cross pressure sensitive roof beam 22 by unsettled setting, the equal same first pressure sensitive roof beam 221 of straight bar of width and thickness and straight bar second pressure sensitive roof beam 222 constitute, two pressure sensitive roof beams 221, 222 intersect the middle part perpendicularly, the both ends of first pressure sensitive roof beam 221 link to each other with the middle part on 2 relative interior edges of the frame 21 of pressure sensitive layer 20 respectively, the both ends of second pressure sensitive roof beam 222 link to each other with the middle part on the other 2 relative interior edges of the frame 21 of pressure sensitive layer 20.
The upper surfaces of the first pressure sensitive beam and the second pressure sensitive beam, which are close to 4 positions (namely, near the fixed support points of the pressure sensitive beams) connected with the frame, are respectively provided with 1 piezoresistor 23, 4 piezoresistors 23 are arranged in total, the 4 piezoresistors 23 are distributed in central symmetry, and the 4 piezoresistors 23 are connected to form a Wheatstone bridge. The central shaft of the positioning hole or the positioning groove passes through the geometric center of the cross-shaped pressure sensitive beam. The position where the piezoresistor is arranged is a position where the stress change of the pressure sensitive beam is large, and the piezoresistor arranged at the position can obtain high sensitivity.
The thickness of the cross-shaped pressure sensitive beam is 1-200 mu m, and the width of the cross-shaped pressure sensitive beam is 50-500 mu m. The thickness and the width of the sensor are related to the measuring range of the force sensor and can be set according to actual requirements.
A positioning hole or a positioning groove 220 with a circular cross section is arranged in the middle of the cross-shaped pressure sensitive beam 22 for positioning the pressure conducting part 50. When packaged, the pressure-conducting member 50 is positioned in the positioning hole or groove 220. The central axis of the positioning hole 220 passes through the geometric center of the cross-shaped pressure sensitive beam, and the diameter of the positioning hole or positioning groove 220 is preferably 1/2 times the width of the first pressure sensitive beam.
It should be noted that the cross-shaped pressure sensitive beam is easy to manufacture, has a stable structure and high sensitivity, but the pressure sensitive beam of the present invention is not limited to the above structure, and can be implemented in other structures.
For example, the pressure sensitive beam 22 is an axisymmetric or centrosymmetric pressure sensitive beam 22; preferably, the pressure sensitive beams 22 are formed by a first pressure sensitive beam and a second pressure sensitive beam which are connected with each other at the middle, and 4 connecting portions between the first pressure sensitive beam and the frame 21 are symmetrically distributed or centrosymmetrically distributed about an axis which is perpendicular to and passes through the geometric center of the pressure sensitive beams 22.
For example, in one embodiment, the pressure sensitive beam is composed of a first pressure sensitive beam and a second pressure sensitive beam which are connected in the middle, and the first pressure sensitive beam and the second pressure sensitive beam are parallel to each other and connected through a pressure sensitive cross beam to form an H-shaped pressure sensitive beam; in another embodiment, the first pressure sensitive beam and the second pressure sensitive beam intersect in a non-perpendicular manner to form an X-shaped pressure sensitive beam; in another embodiment, the pressure sensitive beam is not formed by connecting 2 straight strip-shaped pressure sensitive beams with equal width and equal thickness as the cross-shaped pressure sensitive beam, for example, the cross section of the connecting part of the first pressure sensitive beam and the second pressure sensitive beam is square, rectangular, circular or regular polygon, and optionally, the width of the cross section, such as the side length of the square or the diameter of the circle, is larger or smaller than the width of the non-connecting part of the 2 pressure sensitive beams; more preferably, the first pressure sensitive beam and the second pressure sensitive beam have the same length, and the geometric center of the first pressure sensitive beam and the geometric center of the second pressure sensitive beam are overlapped to form the geometric center of the pressure sensitive beam, or the center line of the pressure sensitive beam connecting the first pressure sensitive beam and the second pressure sensitive beam passes through the geometric center of the first pressure sensitive beam and the geometric center of the second pressure sensitive beam, and the geometric center of the pressure sensitive beam forms the center of the pressure sensitive beam; more preferably, the centerline of the groove of the substrate passes through the geometric center of the pressure sensitive beam.
Similarly, the groove 11 is not limited to a square shape, and may have a rectangular parallelepiped shape, a cylindrical shape, a circular truncated cone shape, a regular octagonal prism shape, or the like. Similarly, the positioning portion may be implemented as a positioning groove or other structures, and the shape is not limited to a circular shape.
The working principle of the force sensor of the embodiment is as follows: when no external pressure is applied to the pressure sensitive beam 22, the Wheatstone bridge formed by connecting the piezoresistors 23 is in an equilibrium state, and zero point output is realized; when an external pressure acts on the pressure sensitive beam 22, for example, directly acts on the pressure sensitive beam 22, or acts on the pressure sensitive beam 22 through the pressure conduction member 50, the pressure sensitive beam 22 deforms, so that the resistance value of the piezoresistor 23 changes, an electrical signal is output, and the magnitude of the external pressure is obtained according to the electrical signal, thereby realizing the detection of the force.
Based on the structural features, it is impossible to exhaust all possible forms, and the essence of the present invention is that the pressure sensitive layer above the groove of the hollowed-out substrate is made into a pressure sensitive beam, piezoresistors are made on the pressure sensitive beam, at least a part of each piezoresistor is located on the pressure sensitive beam, and the piezoresistors are connected to form a wheatstone bridge.
The force sensor of the embodiment can detect the external mechanical pressure directly applied to the pressure sensitive beam without using fluid such as gas, liquid and the like as a medium, so that the application scene is greatly expanded; meanwhile, the force sensor has a small volume, the cross section area can be as small as 1mm by 1mm, and the force sensor can be arranged into a sensor array, so that the pressure distribution conditions of different positions are obtained; the force sensor also realizes a lower measuring range, and the measuring range can be as small as 0-4mN by adjusting the width and the thickness of the pressure sensitive beam.
Example 2 method for preparing force sensor
Referring to fig. 3a to 3d, this embodiment provides a method for manufacturing the force sensor according to embodiment 1, including the following steps:
s1: referring to fig. 3a, a pressure sensitive membrane is thinned to a predetermined thickness on an SOI substrate having a cavity 11, which is composed of an SOI substrate 10 and the pressure sensitive membrane, to form a pressure sensitive layer 20;
s2: referring to fig. 3b, 4 piezoresistors 23 which are axisymmetric or centrosymmetrically distributed are manufactured at preset positions on the upper surface of the pressure sensitive layer 20, and the 4 piezoresistors 23 are connected to form a wheatstone bridge;
s3: referring to fig. 3c, based on the preset structure of the pressure sensitive beam 22 and the position of the piezoresistor, a lead hole and a metal lead 224 are made on the pressure sensitive layer 20;
s4, referring to fig. 3d, etching the pressure sensitive layer 20 above the cavity 11 based on the preset structure of the pressure sensitive beam 22, hollowing out the pressure sensitive layer 20 to form the pressure sensitive beam 22, and optionally, etching a positioning hole or a positioning groove 220 at the center of the pressure sensitive beam 22.
Wherein the SOI substrate with the cavity is obtained by adopting the method comprising the following steps:
s11: providing an SOI substrate and a pressure sensitive diaphragm, wherein the pressure sensitive diaphragm is a monocrystalline silicon wafer for example;
s12: forming a groove on the SOI substrate through an etching process;
s13: and bonding the SOI substrate and the pressure sensitive membrane by using a bonding process, wherein the pressure sensitive membrane covers the groove.
In the following, a detailed description will be given of a manufacturing method of the force sensor having the cross-shaped pressure sensitive beam structure of example 1.
S101: providing an SOI substrate and a pressure sensitive diaphragm, wherein the pressure sensitive diaphragm is a monocrystalline silicon wafer.
S102: a first insulating layer is formed on an SOI substrate in a deposition mode through a 6-inch MEMS film deposition process, square holes are formed in the first insulating layer through an etching process, and square grooves are formed in the SOI substrate through the etching process.
S103: and bonding the SOI substrate and the pressure sensitive membrane by using a bonding process, wherein the pressure sensitive membrane covers the groove. The bonding process employs processes well known to those skilled in the art, such as a silicon-silicon thermal bonding process, a source-coating bonding process, an organic glue bonding process, an inter-metallic bonding process, or a glass paste bonding process.
S104: and thinning the pressure sensitive membrane to a preset thickness by adopting a thinning process, such as a mechanical thinning process, and forming a pressure sensitive layer on the SOI substrate.
S105: based on the structure of the preset cross-shaped pressure sensitive beam, 1 piezoresistor is respectively manufactured at 4 positions (namely, near the fixed supporting point of the pressure sensitive beam) where four end parts of the preset cross-shaped pressure sensitive beam on the pressure sensitive layer are connected with the frame of the pressure sensitive layer, and 4 piezoresistors are manufactured altogether, wherein the 4 piezoresistors are distributed in a central symmetry manner. The piezoresistors can be fabricated using processes known to those skilled in the art, such as ion implantation processes, diffusion processes, and the like.
S106: based on the preset position of the cross-shaped pressure sensitive beam structure and the piezoresistor, a second insulating layer is formed on the pressure sensitive layer in a deposition mode through a 6-inch MEMS film deposition process, a lead hole of the piezoresistor is formed in the second insulating layer through an etching process, a metal film is formed on the second insulating layer in a deposition mode, a patterned metal lead 224 is formed on the pressure sensitive layer through a patterning process, and the piezoresistor is connected into a Wheatstone bridge.
S107: and etching the pressure sensitive layer above the groove based on a preset cross-shaped pressure sensitive beam structure, and hollowing out to form the cross-shaped pressure sensitive beam.
The preparation method of the force sensor provided by the embodiment has the advantages of simple process and low cost, and is suitable for batch production.
Embodiment 3 sensor packaging the force sensor chip described above
Referring to fig. 4 to 6, the present embodiment proposes a sensor including the above-described MEMS force sensor chip, a pressure-conducting member 50, a sensor chip housing, and an elastic member 40.
The chip comprises a substrate 10, a groove 11 is formed in the upper surface of the substrate 10, and a pressure sensitive layer 20 is arranged on the upper surface of the substrate 10.
The pressure sensitive layer 20 includes a frame 21 and a pressure sensitive beam 22. The frame 21 at least partially surrounds, preferably completely surrounds, the groove 11, the pressure sensitive beam 22 is formed above the groove 11 by hollowing out the pressure sensitive layer 20 above the groove 11, the pressure sensitive beam 22 is arranged in a suspended manner, the lower surface of the pressure sensitive beam 22 has a certain distance from the bottom of the groove 11, and each end of the pressure sensitive beam 22 is respectively connected with the frame 21 of the pressure sensitive layer 20.
The pressure sensitive beam 22 is a pressure sensitive beam 22 with an axisymmetric structure or a centrosymmetric structure; preferably, the pressure sensitive beam 22 is formed by a first pressure sensitive beam and a second pressure sensitive beam which are connected with each other at the middle, preferably, the length of the first pressure sensitive beam is equal to the length of the second pressure sensitive beam, and preferably, the 4 connecting portions between the first pressure sensitive beam and the frame 21 are symmetrically distributed or centrosymmetrically distributed about an axis which is vertical to and passes through the geometric center of the pressure sensitive beam 22.
The upper surface of the pressure sensitive layer 20 is provided with 4 piezoresistors 23, at least one part of each piezoresistor 23 is positioned on the pressure sensitive beam 22, preferably completely positioned on the pressure sensitive beam 22, the 4 piezoresistors 23 are connected to form a wheatstone bridge, and the 4 piezoresistors 23 are distributed in central symmetry or in axial symmetry about an axis which is vertical and passes through the geometric center of the pressure sensitive beam 22. More preferably, 4 piezoresistors 23 are respectively arranged at each end position of the pressure sensitive beam 22 connected with the frame 21 of the pressure sensitive layer 20.
In another embodiment, the pressure sensitive layer 20 has 2 piezoresistors 23 on its upper surface, at least a portion of each piezoresistor 23 is located on the pressure sensitive beam 22, preferably completely located on the pressure sensitive beam 22, the 2 piezoresistors 23 are connected to form a half bridge of a wheatstone bridge, and the 2 piezoresistors 23 are distributed in axial symmetry. More preferably, 2 piezoresistors are respectively arranged at each end position of the pressure sensitive beam 22 connected with the frame 21 of the pressure sensitive layer 20.
The pressure sensitive beam 22 is provided with a positioning hole or a positioning groove 220 for positioning a pressure conducting component, preferably, the positioning hole or the positioning groove 220 is arranged at the center of the pressure sensitive beam 22, and preferably, the cross section of the positioning hole or the positioning groove 220 is circular.
The sensor chip accommodating body is used for accommodating the MEMS force sensor chip and is provided with an open end, for example, a plastic accommodating body with at least one open end.
The elastic member 40 is fixedly connected to an opening end of the sensor chip accommodating body.
In a preferred embodiment, the elastic member 40 is an elastic sheet, and is made of a thin sheet, preferably a hard sheet, such as a stainless steel sheet, according to a predetermined pattern, such as a stainless steel sheet 40 made by etching the stainless steel sheet with an etching solution according to a predetermined pattern. The elastic sheet 40 has a circular hole 44 corresponding to the positioning hole or the positioning groove in the middle, the inner edge of the circular hole 44 is connected to the pressure conduction member, the diameter L of the circular hole is smaller than the maximum diameter D of the pressure conduction member, preferably, 2/3D < L < D.
Referring to fig. 5, the elastic sheet 40 is in the form of a flat sheet, and has an outer frame 41 and an inner ring 42 connected to the outer frame 41, and the outer edge of the outer frame 41 is in a regular shape, such as a square, rectangle, circle, regular polygon, etc., and preferably conforms to the opening shape of the sensor chip housing.
The middle part of the elastic sheet 40 is provided with an inner ring 42, the inner ring 42 encloses a round hole 44 defining the middle part of the elastic sheet 40, the inner ring 42 is connected with the outer frame 41 through a plurality of connecting arms 43 uniformly distributed on the outer side of the inner ring 42, and the connecting parts of the connecting arms 43 and the inner ring 42 are uniformly distributed at equal angles in the circumferential direction of the inner ring 42.
The connecting arm 43 may be a straight arm or a curved arm. In one embodiment, the curved arm 43 is composed of a first straight arm 431, a fan-shaped annular arm 432 and a second straight arm 433 which are connected in sequence, the fan-shaped annular arm 432 is a part of a circular ring coaxial with the inner circular ring 42, the outer end of the first straight arm 431 is connected with the outer edge of the inner circular ring 42, and the outer end of the second straight arm 433 is connected with the outer frame 41. The first straight arm 431 and the second straight arm 433 are not strictly limited to straight bar structures with equal widths, and the widths thereof are allowed to vary within a certain range in the diameter direction of the inner ring 42. The elastic sheet with the structure, especially the stainless steel elastic sheet, has the advantages of low cost, simple process, reliable structure, high sensitivity and high stability.
The pressure conducting member 50 is used for transmitting external pressure to the pressure sensitive beam 22, and is fixedly arranged between the sensor chip accommodating body and the elastic member 40. One end of the pressure conduction member 50 is disposed on the positioning hole or the positioning groove 220, and the other end is connected to the elastic member 40. Preferably, the pressure conduction member 50 is connected to the mechanical center of the elastic member 40.
The pressure conducting part 50 is preferably a hard structure body with a circular cross section, and the maximum diameter of the pressure conducting part is larger than the inner diameter of the opening at the top of the positioning hole or the positioning groove; preferably, the pressure conducting component is a hard structure body with a circular cross section, and the relation between the maximum diameter D and the inner diameter D of the top opening of the positioning hole or the positioning groove is D < D <5D, preferably, 1.1D < D < 2D; also preferred are round spheres, more preferably rigid round spheres, such as stainless steel or ceramic spheres made of stainless steel, ceramic, or the like. The diameter of the sphere/hard sphere is larger than the inner diameter of the inner ring 52 and also larger than the diameter of the circular positioning hole or groove 220. However, the pressure-transmitting member 50 of the present invention is not limited to a spherical shape, and may have other shapes such as a cylindrical shape. During packaging, one end of the sphere/rigid sphere 50 is embedded into the inner ring 52, and the sphere/rigid sphere is connected with the inner edge of the inner ring 52. The round structure of the sphere/rigid sphere can uniformly transmit the external pressure to the pressure transmission part 50 in all directions, and further to the pressure sensitive beam 22, so that the detection sensitivity and accuracy are higher.
Preferably, the pressure-conducting member 50, the sensor chip accommodating body, and the elastic member 40 are bonded and fixed to each other.
The preparation method of the sensor of the embodiment comprises the following steps:
s1, providing an elastic member 40 (such as the stainless steel elastic sheet 40), a pressure conduction member 50 (such as a hard round ball), and the MEMS force sensor chips, wherein the force sensor chips are arranged in an array.
And S2, injecting an epoxy resin material at high temperature by using a plastic package mold, performing one-step molding, cooling, and sealing the force sensor chips arranged in the array by using plastic, wherein the force sensor chips are accommodated in the sensor chip accommodating body.
And S3, cutting the plastic-packaged force sensor chips arranged in an array manner to form a single plastic-packaged force sensor chip.
S4, adhering one end of the pressure conducting member 50 to the circular hole 44 of the elastic member 40 (for example, one end of the hard round ball 50 is embedded into the inner circular ring 42 of the stainless steel elastic sheet 40 and adhered by using an adhesive), and this step can be completed by using a robot.
S5, the other end of the pressure-transmitting member 50 bonded to the elastic member 40 is placed in the positioning hole or the positioning groove 220 of the force sensor chip.
And S6, adhering the opening end of the sensor chip accommodating body and the elastic component 40.
Obviously, not all of the above steps are necessarily in accordance with the numbered order, for example, S4 may precede S3, and a person skilled in the art can easily determine the order of implementation of the method steps according to the technical logic order.
Fig. 4 is a schematic view of the bonding structure of the force sensor chip, the elastic member, and the pressure-transmitting member.
FIG. 6 is a photograph of a sensor encapsulating a MEMS force sensor chip with a stainless steel ball in the center.
The sensor packaging process of the embodiment is simple, low in cost, easy for batch production, good in consistency and easy for calibration and calibration.
The embodiments of the present invention have been described above. However, the present invention is not limited to the above embodiment. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (19)
1. A sensor is characterized by comprising an MEMS force sensor chip, a pressure conduction component, a sensor chip accommodating body and an elastic sheet;
the chip comprises a substrate, wherein a groove is formed in the upper surface of the substrate, and a pressure sensitive layer is arranged on the upper surface of the substrate; the pressure sensitive layer comprises a frame and a pressure sensitive beam; the frame is partially or completely arranged around the groove, the pressure sensitive beam is formed by hollowing out the pressure sensitive layer above the groove, the pressure sensitive beam is arranged above the groove, and each end part of the pressure sensitive beam is respectively connected with the frame; the upper surface of the pressure sensitive layer is provided with 2 or 4 piezoresistors, at least one part of each piezoresistor is positioned on the pressure sensitive beam, the 2 piezoresistors are connected to form a Wheatstone bridge half-bridge, or the 4 piezoresistors are connected to form a Wheatstone bridge, and the middle part of the pressure sensitive beam is provided with a positioning hole or a positioning groove which is used for positioning the pressure conducting component and has a circular cross section;
the sensor chip accommodating body is used for accommodating the MEMS force sensor chip and is provided with an opening end;
the elastic sheet is fixedly connected with the opening end of the sensor chip accommodating body, the middle part of the elastic sheet is provided with a round hole, the round hole corresponds to the positioning hole or the positioning groove, and the inner edge of the round hole is connected with the pressure transmission component;
the pressure conduction component is used for transmitting external pressure to the pressure sensitive beam, the cross section of the pressure conduction component is a circular hard structure body, one end of the pressure conduction component is arranged on the positioning hole or the positioning groove, the other end of the pressure conduction component is bonded at the round hole of the elastic sheet, the maximum diameter D of the pressure conduction component is larger than the diameter L of the round hole, and the relation between the maximum diameter D of the pressure conduction component and the inner diameter D of the top opening of the positioning hole or the positioning groove is that D < D < 5D.
2. The sensor of claim 1, wherein the pressure sensitive beam is in an axisymmetric configuration or in a centrosymmetric configuration.
3. The sensor of claim 2, wherein the pressure sensitive beam is comprised of a first pressure sensitive beam and a second pressure sensitive beam interconnected at their midpoints.
4. The sensor of claim 3, wherein the first pressure sensitive beam and the second pressure sensitive beam are perpendicular to each other to form a cross-shaped pressure sensitive beam; or the first pressure sensitive beam and the second pressure sensitive beam are parallel to each other and connected through the pressure sensitive cross beam to form an H-shaped pressure sensitive beam; or the first pressure sensitive beam and the second pressure sensitive beam intersect in a non-perpendicular mode to form an X-shaped pressure sensitive beam.
5. The sensor of claim 4, wherein in the cross-shaped pressure sensitive beam or the X-shaped pressure sensitive beam, the first pressure sensitive beam and the second pressure sensitive beam have the same length, and the geometric center of the first pressure sensitive beam and the geometric center of the second pressure sensitive beam are coincident to form the geometric center of the pressure sensitive beam; or,
in the H-shaped pressure sensitive beam, a central line of a pressure sensitive beam connecting a first pressure sensitive beam and a second pressure sensitive beam passes through the geometric center of the first pressure sensitive beam and the geometric center of the second pressure sensitive beam, and the geometric center of the pressure sensitive beam forms the center of the pressure sensitive beam.
6. The sensor of claim 5, wherein a centerline of the groove passes through a geometric center of the pressure sensitive beam.
7. The sensor of claim 1, wherein the piezoresistors are respectively disposed at respective end positions of the pressure sensitive beam that meet a border of the pressure sensitive layer.
8. The sensor of any of claims 1-7, wherein the 2 piezoresistors are symmetrically distributed, or wherein the 4 piezoresistors are centrosymmetrically distributed.
9. The sensor of claim 1, wherein the groove is square, the frame is disposed around the groove, the frame is square, the frame has 4 inner edges, and the 4 inner edges form a square; the pressure sensitive beam consists of a straight strip-shaped first pressure sensitive beam and a straight strip-shaped second pressure sensitive beam which are mutually connected at the middle part and have the same width and thickness, and the first pressure sensitive beam and the second pressure sensitive beam are mutually vertical to form a cross-shaped pressure sensitive beam; two ends of the first pressure sensitive beam are respectively connected with the middle parts of 2 opposite inner edges of the frame of the pressure sensitive layer, and two ends of the second pressure sensitive beam are connected with the middle parts of the other 2 opposite inner edges of the frame of the pressure sensitive layer; the upper surfaces of the first pressure sensitive beam and the second pressure sensitive beam, which are close to 4 positions connected with the frame, are respectively provided with 1 piezoresistor, the centers of the 4 piezoresistors are symmetrically distributed, the middle part of the cross-shaped pressure sensitive beam is provided with a positioning hole or a positioning groove, and the central shaft of the positioning hole or the positioning groove passes through the geometric center of the cross-shaped pressure sensitive beam.
10. The sensor of claim 1, wherein the substrate is an SOI substrate and the pressure sensitive layer is comprised of single crystal silicon.
11. The sensor of claim 10, wherein the resilient sheet is a stainless steel resilient sheet.
12. A transducer according to claim 10 or 11, wherein the spring plate has an outer rim and an inner ring connected to the outer rim, the inner ring enclosing a circular aperture defining the spring plate; the shape of the outer edge of the outer frame is matched with the opening shape of the sensor chip accommodating body, and the inner circular ring is connected with the outer frame through a plurality of connecting arms distributed on the outer side of the inner circular ring.
13. The sensor of claim 12, wherein the plurality of connecting arms are evenly distributed between an outer side of the inner ring and an inner side of the outer rim.
14. The sensor of claim 12, wherein the connecting arm is a straight or curved arm.
15. The sensor of claim 14, wherein the curved arm is formed by a first straight arm, a fan-shaped annular arm and a second straight arm connected in series, the fan-shaped annular arm being part of an annular ring coaxial with the inner annular ring, the outer end of the first straight arm being connected to the outer rim of the inner annular ring and the outer end of the second straight arm being connected to the outer rim.
16. The sensor of claim 1, wherein 2/3D < L < D.
17. The sensor of claim 1, wherein 1.1D < 2D.
18. The sensor of claim 1, wherein the pressure conducting member is a rigid round ball.
19. A method of manufacturing a sensor as claimed in any one of claims 1 to 18, comprising the steps of:
s1, providing an elastic sheet with a preset structure, a pressure conduction component and the MEMS force sensor chip, wherein the force sensor chip is arranged in an array;
s2, sealing the force sensor chips arranged in the array by plastic through a plastic package mold, so that the force sensor chips are accommodated in the sensor chip accommodating body;
s3, cutting the plastic-packaged force sensor chips arranged in an array to form a single plastic-packaged force sensor chip;
s4, adhering one end of the pressure conduction component to the round hole of the elastic sheet;
s5, placing the other end of the pressure conduction component adhered with the elastic sheet on the positioning hole or the positioning groove of the force sensor chip;
and S6, adhering the opening end of the sensor chip accommodating body and the elastic sheet.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104897333A (en) * | 2015-06-29 | 2015-09-09 | 歌尔声学股份有限公司 | MEMS (Micro-electromechanical Systems) pressure sensing element and manufacturing method therefor |
| CN105310669A (en) * | 2014-06-16 | 2016-02-10 | 北京敏易联传感技术有限公司 | MEMS contact-type force sensor applied to sphygmomanometer and manufacturing method thereof |
| CN106885919A (en) * | 2016-12-28 | 2017-06-23 | 南京航空航天大学 | A kind of new micro spherical sensors of aware space environmental change and preparation method thereof |
| CN108225619A (en) * | 2017-12-25 | 2018-06-29 | 广州中国科学院工业技术研究院 | A kind of tactile feel answers finger tip |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105310669A (en) * | 2014-06-16 | 2016-02-10 | 北京敏易联传感技术有限公司 | MEMS contact-type force sensor applied to sphygmomanometer and manufacturing method thereof |
| CN104897333A (en) * | 2015-06-29 | 2015-09-09 | 歌尔声学股份有限公司 | MEMS (Micro-electromechanical Systems) pressure sensing element and manufacturing method therefor |
| CN106885919A (en) * | 2016-12-28 | 2017-06-23 | 南京航空航天大学 | A kind of new micro spherical sensors of aware space environmental change and preparation method thereof |
| CN108225619A (en) * | 2017-12-25 | 2018-06-29 | 广州中国科学院工业技术研究院 | A kind of tactile feel answers finger tip |
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Application publication date: 20190419 Assignee: Anhui Jingxin Sensor Technology Co.,Ltd. Assignor: BEIJING ZHIXIN SENSING TECHNOLOGY Co.,Ltd.|BEIJING INSTITUTE OF COLLABORATIVE INNOVATION Contract record no.: X2022980007158 Denomination of invention: A sensor and its preparation method Granted publication date: 20190625 License type: Exclusive License Record date: 20220607 |
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