CN207675357U - A kind of pressure-detecting device based on synchro-resonance - Google Patents
A kind of pressure-detecting device based on synchro-resonance Download PDFInfo
- Publication number
- CN207675357U CN207675357U CN201820088763.XU CN201820088763U CN207675357U CN 207675357 U CN207675357 U CN 207675357U CN 201820088763 U CN201820088763 U CN 201820088763U CN 207675357 U CN207675357 U CN 207675357U
- Authority
- CN
- China
- Prior art keywords
- pressure
- substrate
- synchro
- resonance
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The utility model is related to a kind of pressure-detecting devices based on synchro-resonance, belong to pressure-detecting device.Including 2N resonant element, upper substrate and lower substrate, each resonant element is mounted between edge pedestal and central seat, the utility model is vibrated using the inverse piezoelectric effect driving beam for the piezoelectric patches being arranged on clamped beam, when vibration frequency levels off to the intrinsic frequency of clamped beam, pass through the effect of coupling unit, with cantilever beam synchro-resonance occurs for clamped beam, realizes frequency multiplication.N group data are subjected to error control, to improve detection sensitivity and precision.Cantilever beam resonant frequency is detected under closed-loop feedback control system, the size of the variable quantity characterization testing pressure of resonant frequency has the advantages that high sensitivity, high-precision, high-resolution.
Description
Technical field
The utility model is related to a kind of pressure-detecting devices, are filled more particularly, to a kind of pressure detecting based on synchro-resonance
It sets.
Background technology
Pressure-detecting device currently on the market mainly has resonant mode, pressure resistance type and condenser type.The output signal of the two afterwards
It is analog quantity, needs to carry out it signal processing with high-precision adjustment circuit, the shortcomings that this processing mode can exactly causes
The decline of measurement accuracy.And resonant mode pressure detector is then the resonant frequency for changing beam using pressure change, to logical
The variation for crossing measurement frequency measures pressure indirectly, and measurement accuracy can be improved.Since what resonant mode pressure detector exported is
Quasi- digital signal, therefore have the characteristics that measurement sensitivity height, precision height, high resolution, strong antijamming capability, have over long distances
The advantage transmitted without reducing its precision is relatively suitble to carry out high-precision detection to pressure.
Micropressure sensor using the manufacture of MEMS technology, Precision Machining or other precision machining methods has volume
Small, light-weight, high sensitivity, high reliability, becoming has strategic research field in world wide.It is domestic at present
It is mainly outside silicon micro resonance type pressure sensor to the research of MEMS resonant formula pressure sensor, the elastic element of sensor and quick
Sensing unit is all made of silicon materials, is processed using silicon technology.Such as a kind of patent " beam film point of CAS Electronics Research Institute
Utility model patent " a kind of holohedral symmetry silicon micro-resonance type pressure sensing of body structure resonance beam pressure sensor " and Xiamen University
What device " used is all that a vibration unit includes a walking beam.
Invention content
The utility model provides a kind of pressure-detecting device based on synchro-resonance, it is therefore an objective to improve existing pressure sensor
Measurement accuracy, sensitivity, resolution ratio.
The technical scheme adopted by the utility model is that:The front etching upper groove of upper substrate, is formed centrally within the islands Shang Dan;On
The back-etching lower groove of substrate is formed centrally within the islands Xia Dan, is evenly distributed with 2N edge pedestal on the inside of upper groove, N is positive integer;On
Groove, lower groove the center of circle be respectively positioned on the axis of substrate, above lower substrate with the islands Xia Dan lower contact and lower substrate with it is upper
Substrate surrounding is fixed together, and the coupling unit of 2N resonant element is fixedly connected with 2N edge pedestal, is clamped respectively
Beam is fixedly connected with the side of center substrate respectively, lower section and the islands the Shang Dan overlying contact of center substrate.
The upper substrate and lower substrate appearance and size having the same, presentation are cylindric.
The front of the lower substrate has etched groove, and groove and the islands Xia Dan are tightly connected, and the center of groove processes a pressure
Power hole.
The structure of the resonant element is:Cantilever beam and clamped beam are connect with coupling unit respectively, piezoelectric patches one and piezoelectricity
Piece two is separately mounted to the fixing end of clamped beam and cantilever beam.
The utility model has the advantage of:Include two walking beams being coupled using a resonant element, utilizes
Synchro-resonance effect so that the clamped beam being coupled will double with cantilever beam output signal according to the two frequency ratio, to
So that the frequency bigger of output, sensitivity and resolution ratio increase.In addition, in 2N resonant element being centrosymmetrically arranged, by N groups
Data carry out error control and the superposition of cell signal amplification, and accuracy of detection can be improved.Using MEMS technology, Precision Machining
Or the substrate up and down that makes of other precision machining methods has that dimensional accuracy is good, reliability is high, the good characteristics such as at low cost, base
Bottom frontal design bonding boss and the single island of back side design can improve the linearity.In conjunction with both this advantage, the utility model design
The resonance type pressure sensor chip based on novel synchronous resonant structure made has high sensitivity, high-precision, high-resolution
The features such as rate, the linearity are good.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model;
Fig. 2 is the half section structure diagram of the utility model detection contact pressure;
Fig. 3 is the half section structure diagram of the utility model detection gas pressure;
Fig. 4 is the structural schematic diagram of the utility model resonant element;
Fig. 5 is the structural schematic diagram that the utility model resonant element number is 8;
Fig. 6 is the structural schematic diagram that the utility model resonant element number is 4.
Specific implementation mode
Referring to Fig.1, Fig. 2, the front etching upper groove 102 of upper substrate 1, is formed centrally within the islands Shang Dan 104;Upper substrate 1
Back-etching lower groove 103 is formed centrally within the islands Xia Dan 105, and 2N edge pedestal 101 is evenly distributed on the inside of upper groove, and N is just whole
Number;Upper groove, lower groove the center of circle be respectively positioned on the axis of substrate, the top of lower substrate 4 and 105 lower contact of the islands Xia Dan and
Lower substrate 4 is fixed together with 1 surrounding of upper substrate, the coupling unit 201 of 2N resonant element 2 respectively with 2N edge base
Seat 101 is fixedly connected, clamped beam 203 is fixedly connected with the side of center substrate 3 respectively, lower section and the islands Shang Dan of center substrate 3
104 overlying contacts;
The upper substrate 1 and 4 appearance and size having the same of lower substrate, presentation are cylindric.
With reference to Fig. 3, the front of the lower substrate 4 has etched groove 401, and groove 401 and the islands Xia Dan 105 are tightly connected, recessed
The center of slot processes a pressure port 402;Pressure port 402 communicates to form gauge pressure formula detection device with air, or with another quilt
Air source is surveyed to communicate to form differential detection device.
With reference to Fig. 4, the structure of the resonant element 2 is:Cantilever beam 202 and clamped beam 203 connect with coupling unit 201 respectively
It connects, piezoelectric patches 1 and piezoelectric patches 2 205 are separately mounted to the fixing end of clamped beam 203 and cantilever beam 202.
Additional testing pressure is not to directly act on resonance mechanism, but act on by the islands Xia Dan 105 and the islands Shang Dan 104
In center substrate 3, and then change the rigidity of resonant element, change its resonant frequency, measure testing pressure indirectly, when measurement gas
When body pressure, the islands Xia Dan 105 are F=pA by upward powerHole, it is F that every rectangular beam, which is evenly distributed with stress,N=F/N.
When work, resonant element resonance is first encouraged, pressure is born later or is passed through under test gas, pressure will be forced and be placed an order
The islands Dao Heshangdan move up, and upward center substrate 3, to drive 203 deformation of clamped beam;Since deformation leads to its axis
It changes to mechanical stress, and then influences the intrinsic frequency of beam.Assuming that the axial stress that rectangular section clamped beam generates is approximate
With FNIt is linearly proportional, i.e.,:
σ=δ FN
σ is rectangular cross section beam axial stress in formula, and δ is linear coefficient;
When σ=0
Clamped beam first natural frequency is:
When σ ≠ 0
In formula, critical Eulerian equationE is the elasticity modulus of material, and ρ is the volume density of beam, a, b, c
It is the length of rectangular cross section beam respectively.
Clamped beam and cantilever beam are designed based on synchro-resonance principle, if clamped beam and cantilever beam intrinsic frequency are f1And f2,
Then the two meets:
It is vibrated using the inverse piezoelectric effect driving silicon beam for the piezoelectric patches being arranged on clamped beam, when vibration frequency levels off to admittedly
Resonance occurs when the intrinsic frequency of strutbeam, by the effect of coupling unit, with cantilever beam synchro-resonance, clamped beam occur for clamped beam
It is m with cantilever beam first natural frequency ratio:N, m, n are integer, n>M, it is to realize frequency multiplication, the frequency of amplification is defeated
Go out, improve sensitivity, the frequency of output is:
Final output frequency f2With pressure p linear approximate relationship, i.e.,:
N groups are carried out error control, if multi-group data difference is larger, illustrate core by the distribution in a center of symmetry of N group resonant elements
Piece damages, and data are wrong;Otherwise data are errorless, and it is accurate to measure;
Referring to figure 5 and figure 6, the resonant element number in utility model device is 2N, belongs to variable, wherein N is
Integer more than 1, N=2 in N=4 in Fig. 5, Fig. 6.
The shape of each beam of uniformly distributed resonant element is not fixed, and can be band-like, can also be the shapes such as S-shaped.
A kind of pressure detection method based on synchro-resonance, includes the following steps:
(1) clamped beam resonance is encouraged with electric signal before detecting pressure, pressure or gas is then acted on into lower substrate
Center removes pressure or gas after signal stabilization;
(2) under the effect of the pressure, the film of upper substrate moves up, and then central seat is forced to move up, and changes
The intrinsic frequency of clamped beam picks up the frequency signal being amplified and output on a cantilever beam;
(3) meet all data averageds within the scope of error condition in N groups data, as final rate-adaptive pacemaker
Signal;
(4) testing pressure is determined by the relationship between output frequency and pressure.
Claims (5)
1. a kind of pressure-detecting device based on synchro-resonance, it is characterised in that:The front etching upper groove of upper substrate, at center
Form the islands Shang Dan;The back-etching lower groove of upper substrate is formed centrally within the islands Xia Dan, 2N edge base is evenly distributed on the inside of upper groove
Seat, N is positive integer;Upper groove, lower groove the center of circle be respectively positioned on the axis of substrate, connect with the islands Xia Dan lower section above lower substrate
Touch and lower substrate be fixed together with upper substrate surrounding, the coupling unit of 2N resonant element respectively with 2N edge base
Seat is fixedly connected, clamped beam is fixedly connected with the side of center substrate respectively, lower section and the islands the Shang Dan overlying contact of center substrate.
2. a kind of pressure-detecting device based on synchro-resonance according to claim 1, it is characterised in that:The upper substrate
It is cylindric with lower substrate appearance and size having the same, presentation.
3. a kind of pressure-detecting device based on synchro-resonance according to claim 1 or 2, it is characterised in that:Under described
The front of substrate has etched groove, and groove and the islands Xia Dan are tightly connected, and the center of groove processes a pressure port.
4. a kind of pressure-detecting device based on synchro-resonance according to claim 1 or 2, it is characterised in that:It is described humorous
The structure of unit of shaking is:Cantilever beam and clamped beam are connect with coupling unit respectively, and piezoelectric patches one and piezoelectric patches two are separately mounted to
The fixing end of clamped beam and cantilever beam.
5. a kind of pressure-detecting device based on synchro-resonance according to claim 3, it is characterised in that:The resonance list
Member structure be:Cantilever beam and clamped beam are connect with coupling unit respectively, and piezoelectric patches one and piezoelectric patches two are separately mounted to clamped
The fixing end of beam and cantilever beam.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201820088763.XU CN207675357U (en) | 2018-01-18 | 2018-01-18 | A kind of pressure-detecting device based on synchro-resonance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201820088763.XU CN207675357U (en) | 2018-01-18 | 2018-01-18 | A kind of pressure-detecting device based on synchro-resonance |
Publications (1)
Publication Number | Publication Date |
---|---|
CN207675357U true CN207675357U (en) | 2018-07-31 |
Family
ID=62974248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201820088763.XU Withdrawn - After Issue CN207675357U (en) | 2018-01-18 | 2018-01-18 | A kind of pressure-detecting device based on synchro-resonance |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN207675357U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107976274A (en) * | 2018-01-18 | 2018-05-01 | 吉林大学 | A kind of pressure-detecting device and detection method based on synchro-resonance |
-
2018
- 2018-01-18 CN CN201820088763.XU patent/CN207675357U/en not_active Withdrawn - After Issue
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107976274A (en) * | 2018-01-18 | 2018-05-01 | 吉林大学 | A kind of pressure-detecting device and detection method based on synchro-resonance |
CN107976274B (en) * | 2018-01-18 | 2023-05-23 | 吉林大学 | Pressure detection device and method based on synchronous resonance |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103105248B (en) | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor | |
CN103115720B (en) | Quartz girder resonant mode micro-pressure sensor chip with silicon substrate single island structure | |
CN205562088U (en) | Quartzy resonance power of integral type is sensing element and dynamometry module frequently | |
CN102128953B (en) | Capacitive micro-acceleration sensor with symmetrically inclined folded beam structure | |
CN104729784B (en) | A kind of beam groove combines step island film micro-pressure sensor chip and preparation method | |
CN101672710B (en) | Beam-film combined micro-pressure sensor | |
CN104764547B (en) | A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip and preparation method | |
CN103941041B (en) | A kind of single mass three-shaft mems accelerometer of three-frame structure | |
CN104748904B (en) | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method | |
WO2014169540A1 (en) | Non-uniform cross section cantilever beam piezoelectricity acceleration sensor | |
CN205562087U (en) | Quartzy two roof beam tuning fork resonance sensing element of integral type and dynamometry module | |
CN107976274A (en) | A kind of pressure-detecting device and detection method based on synchro-resonance | |
CN110501098A (en) | A kind of highly sensitive micro-pressure sensor based on double pressure membranes and weak coupling resonator system | |
JP2011215000A (en) | Tactile sensor | |
CN100447571C (en) | Micro-mechanical silicon resonance beam accelerometer | |
CN207675357U (en) | A kind of pressure-detecting device based on synchro-resonance | |
CN109883581B (en) | Cantilever beam type differential resonance pressure sensor chip | |
CN107817026B (en) | High-resolution differential pressure type flow sensor based on synchronous resonance and detection method | |
CN203376085U (en) | High precision double-end fixing resonant tuning fork type pressure sensor | |
CN108195505A (en) | Micro-resonance type differential pressure pickup and pressure differential detection method with three beam tuning forks | |
CN203249935U (en) | Piezoresistive three-way acceleration sensor | |
JPH07174652A (en) | Semiconductor pressure sensor and its manufacture as well as pressure detection method | |
JP2009265012A (en) | Semiconductor sensor | |
CN201497600U (en) | Surface acoustic wave pressure and temperature sensor | |
CN106872728B (en) | Band outranges the three axis integrated form acceleration transducer of high-g level of protection |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
AV01 | Patent right actively abandoned | ||
AV01 | Patent right actively abandoned | ||
AV01 | Patent right actively abandoned |
Granted publication date: 20180731 Effective date of abandoning: 20230523 |
|
AV01 | Patent right actively abandoned |
Granted publication date: 20180731 Effective date of abandoning: 20230523 |