CN109231157B - Pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder - Google Patents
Pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder Download PDFInfo
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- CN109231157B CN109231157B CN201811318987.6A CN201811318987A CN109231157B CN 109231157 B CN109231157 B CN 109231157B CN 201811318987 A CN201811318987 A CN 201811318987A CN 109231157 B CN109231157 B CN 109231157B
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- 238000006073 displacement reaction Methods 0.000 title claims abstract description 38
- 239000012528 membrane Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 239000007787 solid Substances 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 19
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- 230000035945 sensitivity Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 8
- 238000004458 analytical method Methods 0.000 claims description 5
- 238000009530 blood pressure measurement Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000001017 electron-beam sputter deposition Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
A pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder comprises an upper substrate and a lower substrate which is connected with the upper substrate in a matching way; the lower substrate comprises a lower substrate base layer, a lower substrate metal ohmic circuit layer is arranged on the lower substrate base layer, a lower solid cylinder is arranged in the middle of the lower substrate base layer, and a peripheral supporting structure is arranged at the peripheral edge above the lower substrate base layer; the upper substrate comprises an upper substrate base layer, an upper substrate insulating layer is arranged on the upper substrate base layer, an upper substrate metal ohmic contact circuit and an upper four-beam circular film structure consisting of four beams and an upper central circular film are arranged on the upper substrate insulating layer, and piezoresistive strips are arranged on the beams; a thin-wall cylinder is connected below the upper central circular film, the thin-wall cylinder is sleeved outside the lower solid cylinder, and the peripheral supporting structure is connected below the upper substrate base layer; the invention realizes the integrated measurement of pressure and displacement and has the advantages of good integration level, high measurement sensitivity and the like.
Description
Technical Field
The invention belongs to the technical field of MEMS sensors, and particularly relates to a pressure and displacement integrated MEMS sensor with a four-beam circular membrane and a coaxial cylinder.
Background
In the aerospace, military, automotive and other industries and military fields, it is often necessary to measure parameters such as the pressure applied to a structure and the displacement caused by the pressure. In addition to accurately measuring these parameters in real time, the requirements for miniaturization, integration and versatility of the sensor are becoming more and more urgent. In the prior art structure, the MEMS pressure sensor and the displacement sensor are generally separated due to the difference of detection principles, thereby increasing the manufacturing cost and the space size of the chip. The integrated sensor based on the MEMS technology can realize the integrated measurement of multiple parameters such as pressure, displacement, temperature, acceleration and the like in a limited space, the types of the MEMS integrated sensors reported at present are few, and most of the MEMS integrated sensors belong to simple integration, namely, each physical quantity to be measured is independently designed into a structure according to a corresponding measurement principle, and then the independent functional units are processed at different positions on the same substrate. For example, the left half of the same sensor substrate is made into a pressure detection unit, the right half is made into an acceleration detection unit, and the simple integration can reduce the size and the manufacturing cost of the sensor to a certain extent, but does not fully utilize the cross relation among structures corresponding to each physical measurement principle, namely, does not utilize the structure relation corresponding to each detection principle, thus the sensor belongs to simple on-chip integration, and the integration level of the MEMS sensor needs to be further improved.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide the pressure and displacement integrated MEMS sensor with the combination of the four-beam circular membrane and the coaxial cylinder, which realizes the integrated detection of the pressure and the displacement and has the advantages of small volume, low cost, good integration level, high measurement sensitivity and the like.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder comprises an upper substrate and a lower substrate which is connected with the upper substrate in a matching way;
the lower substrate comprises a lower substrate base layer 100, a lower substrate metal ohmic circuit layer 101 is arranged on the lower substrate base layer 100, a lower solid cylinder 102 is arranged in the middle of the lower substrate base layer 100, and a peripheral supporting structure 103 is also arranged at the peripheral edge above the lower substrate base layer 100;
the upper substrate comprises an upper substrate base layer 300, an upper substrate insulating layer 301 is arranged on the upper substrate base layer 300, an upper substrate metal ohmic contact circuit 303 and an upper four-beam circular film structure formed by four beams 400 and an upper center circular film 401 are arranged on the upper substrate insulating layer 301, piezoresistive strips 302 are arranged on the four beams 400, and a piezoresistive pressure sensor is formed by the piezoresistive strips 302, the upper substrate metal ohmic contact circuit 303 and the upper four-beam circular film structure;
the thin-walled cylinder 304 is connected below the middle part of the upper central circular film 401, the thin-walled cylinder 304 is sleeved outside the lower solid cylinder 102, the peripheral supporting structure 103 is connected below the upper substrate base layer 300, and the variable-area coaxial cylinder capacitive displacement sensor is formed by the axial relative movement of the thin-walled cylinder 304 and the lower solid cylinder 102.
The four piezoresistive strips 302 are designed at the root of the four beams 400 to obtain maximum pressure detection sensitivity.
The peripheral support structure 103 and the upper substrate base layer 300 are bonded below to form the upper and lower substrate connection layers 200.
On the upper substrate insulating layer 301, symmetrically distributed piezoresistive strips 302 are formed at the root parts of the four beams 400 through doping and etching processes, and wheatstone bridges of an upper substrate metal ohmic contact circuit 303 are formed on the upper surface of the upper substrate insulating layer 301 through electron beam evaporation or metal film sputtering processes, so that the piezoresistive strips 302 are connected with each other to form a complete signal output circuit.
The center of the thin-wall cylinder 304 and the center of the upper center circular film 401 need to be ensured to be centered and coincident.
The thin-walled cylinder 304 is processed by laser drilling with high precision, so that the thin-walled cylinder 304 is ensured to be as regular as possible.
The axial height H1 of the thin-walled cylinder 304 is slightly smaller than the axial height H2 of the lower solid cylinder 102, and the height difference dh=h2-H1 between the two is satisfied, and Dh is comprehensively determined according to the displacement and pressure measurement range and structural stress limit analysis of the designed sensor.
The beneficial effects of the invention are as follows: the MEMS pressure sensor and the MEMS displacement sensor are structurally integrated, so that the area of a chip can be reduced to the greatest extent, and the manufacturing cost of the chip is reduced; the whole chip can be packaged at one time, and the chip processing cost is obviously reduced. The upper four-beam circular membrane structure and the thin-wall cylinder of the cylindrical capacitor are concentric integrally, so that the symmetrical stability of the upper four-beam circular membrane structure ensures that the radial displacement of the thin-wall cylinder is minimum or even eliminated in the process of detecting displacement, thereby realizing the measurement of two physical quantities and simultaneously ensuring the linearity and the sensitivity of a displacement sensor. And the axial height difference Dh between the upper thin-wall cylinder and the lower cylinder of the sensor plays a role in natural limiting, has overload resistance more than 3 times, and avoids the sensor failure caused by overscan work.
Drawings
FIG. 1 is a schematic diagram of the overall structure of an embodiment of the present invention.
Fig. 2 is a schematic view of a lower substrate according to an embodiment of the present invention.
Fig. 3 is a schematic structural view of an upper substrate according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1, 2 and 3, a pressure and displacement integrated MEMS sensor with a four-beam circular membrane combined with a coaxial cylinder has a cubic structure, and includes an upper substrate and a lower substrate cooperatively connected therewith;
the lower substrate comprises a lower substrate base layer 100, a lower substrate metal ohmic circuit layer 101 is arranged on the lower substrate base layer 100, a lower solid cylinder 102 is arranged in the middle of the lower substrate base layer 100, and a peripheral supporting structure 103 is also arranged at the peripheral edge above the lower substrate base layer 100;
the upper substrate comprises an upper substrate base layer 300, an upper substrate insulating layer 301 is arranged on the upper substrate base layer 300, an upper substrate metal ohmic contact circuit 303 and an upper four-beam circular film structure formed by four beams 400 and an upper center circular film 401 are arranged on the upper substrate insulating layer 301, piezoresistive strips 302 are arranged on the four beams 400, and a piezoresistive pressure sensor is formed by the piezoresistive strips 302, the upper substrate metal ohmic contact circuit 303 and the upper four-beam circular film structure;
a thin-walled cylinder 304 is connected below the middle part of the upper central circular membrane 401, the thin-walled cylinder 304 is sleeved outside the lower solid cylinder 102, the four-side supporting structure 103 and the lower part of the upper substrate base layer 300 are bonded to form an upper substrate connecting layer 200 and a lower substrate connecting layer, and the variable-area coaxial cylinder capacitive displacement sensor is formed by the axial relative movement of the thin-walled cylinder 304 and the lower solid cylinder 102.
For the present embodiment, as shown by finite element modeling analysis, when external pressure acts on the upper center circular membrane 401, the four beams 400 generate deflection, and simulation results indicate that root stress of the four beams 400 is maximum. Therefore, in this embodiment, according to the stress-strain direction of the four beams 400 when being pressed, the upper four piezoresistive strips 302 are symmetrically designed at the root portions of the four beams 400 by combining the principle of the variation of the transverse and longitudinal piezoresistive effects of the upper four piezoresistive strips 302, so as to obtain the maximum pressure detection sensitivity. When the four beams 400 are subjected to pressure to generate deflection, the resistance values of the four piezoresistive bars 302 positioned on the four beams are changed under the influence of the piezoresistive effect, so that the balance of the Wheatstone bridge of the upper substrate metal ohmic contact circuit 303 is broken, and the output voltage is used for completing the measurement of the pressure.
Through finite element modeling analysis, when external pressure acts on the upper center circular membrane 401, the four beams 400 generate deflection, and the upper center circular membrane 401 smoothly and uniformly generates displacement along the pressure direction, namely, the upper center circular membrane 401 does not generate obvious deflection. Based on this, the thin-walled cylinder 304 connected to the upper central circular membrane 401 will be axially displaced, creating an axial relative motion with the lower solid cylinder 102, producing a cylindrical capacitor output capacitance change, reflecting the displacement detected by the sensor.
On the upper substrate insulating layer 301, symmetrically distributed piezoresistive strips 302 are formed at the root parts of the four beams 400 through doping and etching processes, and wheatstone bridges of an upper substrate metal ohmic contact circuit 303 are formed on the upper surface of the upper substrate insulating layer 301 through electron beam evaporation or metal film sputtering processes, so that the piezoresistive strips are connected with each other to form a complete signal output circuit.
The center of the thin-wall cylinder 304 and the center of the upper center circular film 401 need to be ensured to be centered and coincident, so that the requirements on photoetching plate making and etching processes are high. The purpose of this design is to ensure that when the upper central circular membrane 401 is pressed, the deflection generated by the four beams 400 is uniform and equal, i.e. the upper central circular membrane 401 is kept not deflected in the horizontal XY plane and only generates axial displacement, so as to ensure that the existence of the thin-walled cylinder 304 has no or negligible influence on the piezoresistive structure of the beam membrane.
The thin-wall cylinder 304 adopts a laser drilling high-precision processing technology, so that the thin-wall cylinder 304 is ensured to be as regular as possible.
The axial height H1 of the thin-walled cylinder 304 should be slightly smaller than the axial height H2 of the lower solid cylinder 102, when the thin-walled cylinder 304 and the lower solid cylinder 102 are not subjected to pressure and displacement, the thin-walled cylinder 304 moves axially downwards, and when the displacement is applied, the lower solid cylinder 102 is stationary, so that the axial height H1 of the thin-walled cylinder 304 and the lower solid cylinder 102 should be slightly smaller than the axial height H2 of the lower solid cylinder 102 in the initial stage, and the height difference dh=h2-H1 and Δh of the two should be comprehensively determined according to the displacement and pressure measurement range and structural stress limit analysis of the designed sensor.
The working principle of the invention is as follows: the MEMS pressure sensor and the MEMS displacement sensor are structurally integrated, so that the area of a chip can be reduced to the greatest extent, and the manufacturing cost of the chip is reduced; the whole chip can be packaged by one-time packaging, so that the cost of chip packaging is reduced. When the environment where the sensor is located has pressure and displacement, the four beams 400 and the central circular membrane 401 form a piezoresistive pressure sensor structure together, the pressure is detected, and a corresponding voltage signal is output through the substrate metal ohmic contact circuit 303; meanwhile, the central circular membrane 401 can displace under the action of pressure and drives the thin-wall cylinder 304 to axially move, and forms a variable-area displacement sensor with the solid cylinder 102 of the substrate below, and as the upper part is of a four-beam circular membrane structure, the symmetrical stability of the structure ensures that the radial displacement of the thin-wall cylinder 304 is minimum or even eliminated in the axial displacement process, thereby realizing the measurement of two physical quantities and simultaneously ensuring the linearity and the sensitivity of the displacement sensor. Compared with the common structure, the piezoresistive pressure measurement structure on the upper part can generate larger stress concentration when the diaphragm is subjected to micro pressure, so that the sensor has higher sensitivity when the sensor is used for measuring the micro pressure, and the measurement nonlinearity generated by the film stress and the bending stress when the common diaphragm structure is very thin can be solved. The axial height difference deltah between the thin-walled cylinder 304 and the lower solid cylinder 102 serves as a limit to avoid sensor failure due to overscan operation.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (5)
1. The utility model provides a pressure and displacement integrated MEMS sensor that four roof beam circular membrane and coaxial cylinder combine, includes upper portion substrate and the lower part substrate of being connected with it cooperation, its characterized in that:
the lower substrate comprises a lower substrate base layer (100), a lower substrate metal ohmic circuit layer (101) is arranged on the lower substrate base layer (100), a lower solid cylinder (102) is arranged in the middle of the lower substrate base layer (100), and a peripheral supporting structure (103) is further arranged at the peripheral edge above the lower substrate base layer (100);
the upper substrate comprises an upper substrate base layer (300), an upper substrate insulating layer (301) is arranged on the upper substrate base layer (300), an upper substrate metal ohmic contact circuit (303) is arranged on the upper substrate insulating layer (301), an upper four-beam circular film structure is formed by four beams (400) and an upper center circular film (401), piezoresistive strips (302) are arranged on the four beams (400), and the piezoresistive strips (302), the upper substrate metal ohmic contact circuit (303) and the upper four-beam circular film structure form a piezoresistive pressure sensor;
a thin-wall cylinder (304) is connected below the middle part of the upper central circular film (401), the thin-wall cylinder (304) is sleeved outside the lower solid cylinder (102), the peripheral supporting structure (103) is connected below the upper substrate base layer (300), and the variable-area coaxial cylinder capacitive displacement sensor is formed by the axial relative movement of the thin-wall cylinder (304) and the lower solid cylinder (102);
the four-side supporting structure (103) is bonded below the upper substrate base layer (300) to form an upper substrate connecting layer (200);
on the upper substrate insulating layer (301), symmetrically distributed piezoresistive strips (302) are formed at the root parts of the four beams (400) through doping and etching processes, and a Wheatstone bridge of an upper substrate metal ohmic contact circuit (303) is formed on the upper surface of the upper substrate insulating layer (301) through electron beam evaporation or sputtering metal film processes, so that the piezoresistive strips (302) are connected with each other to form a complete signal output circuit.
2. The pressure and displacement integrated MEMS sensor of claim 1, wherein the four-beam circular membrane is coupled to the coaxial cylinder, wherein: the four piezoresistive strips (302) are designed at the root of the four beams (400) to obtain maximum pressure detection sensitivity.
3. The pressure and displacement integrated MEMS sensor of claim 1, wherein the four-beam circular membrane is coupled to the coaxial cylinder, wherein: the axis of the thin-wall cylinder (304) and the axis of the upper circular film (401) need to be ensured to be centered and overlapped.
4. The pressure and displacement integrated MEMS sensor of claim 1, wherein the four-beam circular membrane is coupled to the coaxial cylinder, wherein: the thin-wall cylinder (304) adopts a laser drilling high-precision processing technology, so that the thin-wall cylinder (304) is ensured to be as regular as possible.
5. The pressure and displacement integrated MEMS sensor of claim 1, wherein the four-beam circular membrane is coupled to the coaxial cylinder, wherein: the axial height H1 of the thin-wall cylinder (304) is slightly smaller than the axial height H2 of the lower solid cylinder (102), and the height difference delta h=H2-H1 between the two is satisfied, and the delta H is comprehensively determined according to the displacement and pressure measurement range of the designed sensor and structural stress limit analysis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811318987.6A CN109231157B (en) | 2018-11-07 | 2018-11-07 | Pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811318987.6A CN109231157B (en) | 2018-11-07 | 2018-11-07 | Pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder |
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| Publication Number | Publication Date |
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| CN109231157A CN109231157A (en) | 2019-01-18 |
| CN109231157B true CN109231157B (en) | 2024-04-09 |
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| CN201811318987.6A Active CN109231157B (en) | 2018-11-07 | 2018-11-07 | Pressure and displacement integrated MEMS sensor combining four-beam circular membrane and coaxial cylinder |
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| CN110411615B (en) * | 2019-07-01 | 2021-08-03 | 杭州电子科技大学 | High-sensitivity MEMS (micro-electromechanical systems) touch sensor structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010056825A (en) * | 1999-12-17 | 2001-07-04 | 서희돈 | Piezoresistor type sensor structure with minimized other-axes sensitivity and method for fabricating the same |
| CN102636298A (en) * | 2012-03-16 | 2012-08-15 | 西安交通大学 | Beam-film four-land structured micro-pressure high-overload sensor chip |
| CN107941407A (en) * | 2017-11-19 | 2018-04-20 | 东北大学 | A kind of micro-voltage high-overload sensor chip |
| CN209177990U (en) * | 2018-11-07 | 2019-07-30 | 西安交通大学 | The pressure and displacement integrated form MEMS sensor structure of four beam diaphragms and concentric cylinder |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI506278B (en) * | 2012-12-06 | 2015-11-01 | Murata Manufacturing Co | High Voltage Resistive MEMS Sensors |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010056825A (en) * | 1999-12-17 | 2001-07-04 | 서희돈 | Piezoresistor type sensor structure with minimized other-axes sensitivity and method for fabricating the same |
| CN102636298A (en) * | 2012-03-16 | 2012-08-15 | 西安交通大学 | Beam-film four-land structured micro-pressure high-overload sensor chip |
| CN107941407A (en) * | 2017-11-19 | 2018-04-20 | 东北大学 | A kind of micro-voltage high-overload sensor chip |
| CN209177990U (en) * | 2018-11-07 | 2019-07-30 | 西安交通大学 | The pressure and displacement integrated form MEMS sensor structure of four beam diaphragms and concentric cylinder |
Non-Patent Citations (1)
| Title |
|---|
| 压阻式MEMS压力传感器的原理与分析;郭成锐;林鸣谢;;电子质量(09);全文 * |
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