CN109217103A - A kind of laser of TO encapsulation - Google Patents
A kind of laser of TO encapsulation Download PDFInfo
- Publication number
- CN109217103A CN109217103A CN201811051397.1A CN201811051397A CN109217103A CN 109217103 A CN109217103 A CN 109217103A CN 201811051397 A CN201811051397 A CN 201811051397A CN 109217103 A CN109217103 A CN 109217103A
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- China
- Prior art keywords
- light emitting
- transition block
- laser
- emitting unit
- resistance wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
Abstract
The embodiment of the present invention provides a kind of laser of TO encapsulation, including light emitting unit, resistance wire, transition block, TO pedestal and TO cap；Wherein, light emitting unit and resistance wire are fixedly arranged in transition block, and resistance wire is used for when the temperature of laser is in preset temperature range, are carried out heating to transition block and are generated heat, heat is enabled to be transmitted to light emitting unit by transition block；Transition block is mounted on TO pedestal, and TO pedestal and the cooperation of TO cap carry out TO encapsulation.A kind of laser of TO encapsulation provided in an embodiment of the present invention effectively reduces power consumption on the basis of guaranteeing light emitting unit stability, heating efficiency is improved, encapsulation difficulty is reduced, is conducive to the realization of laser miniaturization, space can be effectively saved, Application density is improved.
Description
Technical field
The present embodiments relate to the lasers that technical field of photo communication more particularly to a kind of TO encapsulate.
Background technique
Common laser product on current market, output wavelength can vary with temperature, and cause laser output unstable
Fixed or mode changes, it is difficult to guarantee that laser product can operate normally in wider operating temperature range.
In view of the above-mentioned problems, researcher is additionally arranged heating function on laser product, general realizes what TO was encapsulated
The heating method of laser includes by semiconductor cooler (TEC) to laser progress local heating, or at the bottom laser TO
The external back side of seat is added heating sheet and is heated.
Wherein, heating efficiency can be effectively improved in such a way that TEC carries out local heating, but TEC it is expensive and
6 pins are at least needed, the stock size of TO encapsulation is difficult to meet the requirement of TEC.And by being carried on the back in laser TO base exterior
The mode that heating sheet is heated is added in face, low in cost, but heating region is larger, and heat reaches the thermal resistance of light emitting chip
Larger, heating efficiency is low, and power consumption is big.
Summary of the invention
The embodiment of the present invention provides a kind of laser of TO encapsulation, to solve the existing TO encapsulation with heating function
Dimensional problem, cost problem existing for laser and heating efficiency problem.
The embodiment of the present invention provides a kind of laser of TO encapsulation, including light emitting unit, resistance wire, transition block, the bottom TO
Seat and TO cap；
Wherein, the light emitting unit and the resistance wire are fixedly arranged in the transition block, and the resistance wire is for working as
When the temperature of laser is in preset temperature range, heating is carried out to the transition block and generates heat, enables the heat
The light emitting unit is transmitted to by the transition block；
The transition block is mounted on the TO pedestal, and the TO pedestal and TO cap cooperation carry out TO encapsulation.
The laser of a kind of TO encapsulation provided in an embodiment of the present invention, by the way that light emitting unit and resistance wire to be installed in
It crosses on block, resistance wire is realized to the indirect heating of light emitting unit, in the base for guaranteeing light emitting unit stability by transition block
On plinth, power consumption is effectively reduced, improves heating efficiency, reduces encapsulation difficulty, is conducive to the realization of laser miniaturization, energy
It is enough effectively to save space, improve Application density.In addition, transition block is mounted on TO pedestal, facilitate under the condition of high temperature to carry out
Heat dissipation, further improves the stability of light emitting unit.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram of the laser of TO provided in an embodiment of the present invention encapsulation；
Fig. 2 is the structural schematic diagram of transition block provided in an embodiment of the present invention；
Fig. 3 be another embodiment of the present invention provides TO encapsulation laser structural schematic diagram；
Description of symbols:
101- light emitting unit；102- resistance wire；103- transition block；
104-TO pedestal；105-TO cap；201- first surface；
202- heat insulation layer；301- backlight monitoring chip；302- pin.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
Existing TO encapsulation and the laser product with heating function generally use TEC mode or carry on the back in base exterior
The mode of face heating, wherein the price of TEC mode is high, and required pin is more, relatively high to the size requirement of TO encapsulation, and pedestal
External back side heating method efficiency is relatively low.Thus, reducing cost and power consumption, increasing heating efficiency and reduce TO size is mesh
The target call of preceding laser TO encapsulation, the laser of the TO encapsulation provided in an embodiment of the present invention for having heating function can be with
Meet the requirement that low in energy consumption, high-efficient, pin is few and size is small.Fig. 1 is the laser of TO provided in an embodiment of the present invention encapsulation
The structural schematic diagram of device, as shown in Figure 1, a kind of laser of TO encapsulation, including light emitting unit 101, resistance wire 102, transition
Block 103, TO pedestal 104 and TO cap 105；Wherein, the light emitting unit 101 is fixedly arranged on the mistake with the resistance wire 102
Block 103 is crossed, the resistance wire 102 is used for when the temperature of laser is in preset temperature range, is carried out to the transition block 103
Heating generates heat, and the heat is enabled to be transmitted to the light emitting unit 101 by the transition block 103；The mistake
It crosses block 103 to be mounted on the TO pedestal 104, the TO pedestal 104 carries out TO encapsulation with the TO cap 105 cooperation.
Specifically, light emitting unit 101 is the device for having transmitting laser function for being able to carry out TO encapsulation, such as laser
Diode, SLED light source etc., the present invention is not especially limit this.Resistance wire 102 is that can convert electrical energy into heat
The electrical component of energy.Light emitting unit 101 and resistance wire 102 are installed in transition block 103, and transition block 103 is mounted on TO
On pedestal 104, transition block 103 is the good conductor of heat, and the embodiment of the present invention is not to the phase of light emitting unit 101 and resistance wire 102
Position is specifically limited, such as light emitting unit 101 and resistance wire 102 may be disposed at the same face of transition block 103, Huo Zheguang
Transmitting unit 101 is set to the front of transition block 103, and resistance wire 102 is set to the back side of transition block 103.Light emitting unit
101, resistance wire 102, transition block 103 are packaged by TO pedestal 104 and TO cap 105, and are provided on TO cap 105 transparent
Region, the laser signal that light emitting unit 101 is issued project encapsulating structure by transparent region.
When the temperature of laser is in preset temperature range, transition block 103 is heated by resistance wire 102, and
Light emitting unit 101 is transferred heat to by transition block 103, can be realized indirectly through resistance wire 102 to light emitting unit 101
The function of being heated.Herein, preset temperature range is the output wavelength in order to avoid light emitting unit 101 under low-temperature condition
It changes, light emitting unit 101 is caused to export temperature range unstable and being arranged, specific preset temperature range and light are sent out
Environmental correclation locating for the type, model and laser of unit 101 is penetrated, the present invention is not especially limit this.When sharp
When the temperature of light device is in preset temperature range, light emitting unit 101 may due to low temperature there are wavelength changes the case where, at this time
Need to improve the temperature of 101 local environment of light emitting unit by heating, to guarantee the stability of the output of light emitting unit 101.
In addition, light emitting unit 101 is likely to be at the condition of high temperature when the temperature of laser is not in preset temperature range
Under, equally exist the case where output wavelength changes.In view of the above-mentioned problems, resistance wire 102 stops heating, light emitting unit 101
The heat of body can be transferred to outside TO encapsulating structure by the mounted TO pedestal 104 of transition block 103 and transition block 103, with
It realizes shedding for heat, guarantees the stability that light emitting unit 101 exports.Herein, since transition block 103 is to be mounted on TO pedestal
On 104, transition block 103 and TO pedestal 104 is fitted closely, and is conducive to the transmission of heat and is shed.It should be noted that this hair
When the low-temperature condition and the condition of high temperature proposed in bright embodiment respectively refers to stablize, operate normally with light emitting unit 101
Temperature range compares lower and higher state of temperature, low-temperature condition and the condition of high temperature with the type of light emitting unit 101, type
Number and laser locating for environmental correclation, the present invention is not especially limit this.
Laser provided in an embodiment of the present invention, by the way that light emitting unit 101 and resistance wire 102 are installed in transition block
On 103, realize that resistance wire 102 to the indirect heating of light emitting unit 101, is guaranteeing light emitting unit 101 by transition block 103
On the basis of stability, power consumption is effectively reduced, improves heating efficiency, reduces encapsulation difficulty, it is small-sized to be conducive to laser
The realization of change can effectively save space, improve Application density.In addition, transition block 103 is mounted on TO pedestal 104, help
It radiates under the condition of high temperature, further improves the stability of light emitting unit 101.
Based on the above embodiment, resistance wire 102 is fixedly arranged in transition block 103 by sputtering mode.
Specifically, sputtering is to bombard the surface of solids with the particle of certain energy (ion or neutral atom, molecule), makes solid
The atom or molecule of near surface obtain sufficiently large energy and finally escape the processing technology of the surface of solids.Herein, by mistake
It crosses block 103 to be sputtered, resistance wire 102 is machined in transition block 103.
Resistance wire 102 is machined in transition block 103 by laser provided in an embodiment of the present invention by sputtering, compared to biography
The processing technology of system, such as resistance wire 102 is mounted in transition block 103, difficulty of processing is lower, and due to 102 He of resistance wire
Transition block 103 is structure as a whole, and heating properties are more excellent, and overall volume is smaller, is more advantageous to miniaturization TO encapsulation.
Based on any of the above-described embodiment, Fig. 2 is the structural schematic diagram of transition block 103 provided in an embodiment of the present invention, such as Fig. 2
Shown, the light emitting unit 101 is fixedly arranged on the first surface 201 of the transition block 103 with the resistance wire 102, institute
It states and is provided with heat insulation layer 202 around the first surface 201 of transition block 103.
Herein, it is any other than with the mounted attachment face of TO pedestal 104 to can be transition block 103 for first surface 201
Surface.Light emitting unit 101 and resistance wire 102 are fixedly arranged on the first surface 201 of transition block 103, i.e., light emitting unit 101 with
Resistance wire 102 is fixedly arranged on the same surface of transition block 103.In order to further increase the heat conduction efficiency of transition block 103, subtract
Few heat conduction losses between resistance wire 102 and light emitting unit 101, can be insulated around first surface 201
Heat insulation layer 202 is arranged in processing, and the heat for preventing resistance wire 102 from issuing by transition block 103 during being transmitted from the first table
It sheds around face 201.Herein, heat insulation layer 202 is attached to 103 surface of transition block, transmits for trap heat.First surface
The marginal position that can be first surface 201 around 201 is also possible to the proximal surface of first surface 201, can also be transition block
Whole tables except the heat transmission channel that heat transmission on 103 between resistance wire 102 and light emitting unit 101 is reserved
Face, the present invention is not especially limit this.
Laser provided in an embodiment of the present invention prevents resistance wire 102 by the way that heat insulation layer 202 is arranged in transition block 103
The heat of sending sheds around first surface 201 during being transmitted by transition block 103, further improves heating
Efficiency.
It further include backlight monitoring chip based on any of the above-described embodiment, the backlight monitoring chip is installed in the bottom TO
On seat 104, the backlight monitoring chip is located at the light emitting unit 101 and issues on the optical path axis of laser signal.
Specifically, backlight monitoring chip, that is, PD (Photo-Diode) chip, PD is photodiode, for realizing photoelectricity
Conversion.Herein, backlight monitoring chip goes out light for incuding 101 back side of light emitting unit, generates back facet current (also known as monitoring photoelectricity
Stream), to monitor the Output optical power of light emitting unit 101.In order to improve the accuracy rate of backlight monitoring chip monitoring, backlight is supervised
Control chip is installed in light emitting unit 101 and issues on the optical path axis of laser signal.
Based on any of the above-described embodiment, the TO pedestal 104 includes several pins, the light emitting unit 101 and institute
Resistance wire 102 is stated to connect with the corresponding pin by spun gold respectively.The external world can be by light emitting unit 101 as a result,
Corresponding pin applies voltage and issues laser signal to control light emitting unit 101, can also be by corresponding to resistance wire 102
Pin apply voltage and light emitting unit 101 heated to controlling resistance wire 102.It is possible to further super by heat
Sound mode carries out gold wire bonding to light emitting unit 101 and its corresponding pin, resistance wire 102 and its corresponding pin.
Based on any of the above-described embodiment, the material of transition block 103 is ceramics insulator, such as aluminium nitride ceramics and aluminium oxide
Ceramics etc..Wherein, aluminium nitride ceramics is the ceramics with aluminium nitride (AIN) for principal crystalline phase, is a kind of high-temperature heat-resistance material.Nitridation
The thermal conductivity of aluminium ceramics reaches 260W/ (m.k), 5-8 times higher than aluminium oxide, so heat shock resistance is good, 2200 DEG C of ability it is very hot.By
The transition block 103 that above-mentioned material is constituted, the heat transmission that can rapidly issue resistance wire 102 to light emitting unit 101, and will
The extra heat transmission of light emitting unit 101 to TO pedestal 104 sheds, and can effectively maintain the stabilization of light emitting unit 101.
Based on any of the above-described embodiment, light emitting unit 101 is laser diode.Laser diode (Laser diode)
Including single heterojunction (SH), double heterojunction (DH) and Quantum Well (QW) laser diode.Laser diode has high-efficient, volume
Advantage small, the service life is long.The laser that TO encapsulation is constituted is carried out to laser diode and is also known as LD-TO.
Based on any of the above-described embodiment, the heat insulation layer 202 is by the first surface 201 to the transition block 103
Around be passivated to be formed.Specifically, passivation is since metal and Oxidant act on, and when effect generates in metal surface
It is a kind of it is very thin, fine and close, covering performance is good, can firmly attached passivating film on the metal surface.The present invention is implemented
In example, passivating film is heat insulation layer 202.
It further include control unit based on any of the above-described embodiment；When the temperature of the laser is in preset temperature range
When, described control unit applies voltage to the corresponding pin of the resistance wire 102, so that the resistance wire 102 is to the transition
Block 103 carries out heating and generates heat, and the heat is transmitted to the light emitting unit 101 by the transition block 103.
Specifically, control unit is arranged other than TO encapsulating structure.When the temperature of laser is in preset temperature range,
Control unit applies voltage to the corresponding pin of the resistance wire 102, and voltage transmission to resistance wire 102, is passed through resistance by pin
102 pairs of transition blocks 103 of silk heat, and transfer heat to light emitting unit 101 by transition block 103, realize and pass through indirectly
The function that resistance wire 102 heats light emitting unit 101.
When the temperature of laser is not in preset temperature range, control unit stops applying to the corresponding pin of resistance wire 102
Making alive, resistance wire 102 stop heating, and the heat of light emitting unit 101 itself can pass through transition block 103 and transition block
103 mounted TO pedestals 104 are transferred to outside TO encapsulating structure, to realize shedding for heat, guarantee that light emitting unit 101 exports
Stability.
It further include temperature monitoring unit based on any of the above-described embodiment, the temperature monitoring unit and described control unit
Connection, the temperature monitoring unit are used to send described control unit for the temperature of the laser.Herein, temperature monitoring list
Member is capable of the temperature of real-time monitoring laser, and temperature monitoring unit can be thermistor, can also be that temperature sensor etc. is set
It is standby.
In order to better understand with a kind of application laser of TO encapsulation provided by the invention, present invention progress is with shown below
Example, and the present invention is not only limited to following example.
Fig. 3 be another embodiment of the present invention provides TO encapsulation laser structural schematic diagram, as shown in figure 3, TO seal
The laser of dress includes light emitting unit 101, resistance wire 102, transition block 103, backlight monitoring chip 301, TO pedestal 104, TO
Cap 105 and spun gold.Light emitting unit 101 is mounted on the upper surface front end of transition block 103, resistance wire by golden tin welding mode
102 are machined to the upper surface rear end of transition block 103 by sputtering technology, and pass through spun gold and corresponding pin on TO pedestal 104
302 connections.Backlight monitoring chip 301 is mounted on the upper surface of TO pedestal 104, and and light emitting unit by glue or golden soldering
101 issue the optical path of laser on the same axis.
When the temperature of laser is in preset temperature range, voltage is applied to the corresponding pin 302 of resistance wire 102,
So that resistance wire 102 works, heated, guarantees that the operating temperature of light emitting unit 101 is enabling to light emitting unit 101
Within the temperature range of steady operation, so that the range for controlling wavelength meets transmission application requirement.
In addition, this example carries out insulation to the surrounding of 103 upper surface of transition block, increase the thermal resistance of surrounding, it is ensured that light
Transmitting unit 101 is in heat transfer path, so that the heat maximization that resistance wire 102 generates is transmitted to light emitting unit 101, this
The heat that outer light emitting unit 101 generates is come into contact in a large area with TO pedestal 104 by the lower surface of transition block 103 and is passed,
To not influence shedding for heat.It may therefore be assured that light emitting unit 101 can absorb the transmitting of resistance wire 102 under low-temperature condition
The heat to come over, and light emitting unit 101 can transfer heat to TO pedestal by 103 lower surface of transition block under the condition of high temperature
104 shed.
The laser that this example provides is led to by the way that light emitting unit 101 and resistance wire 102 to be installed in transition block 103
It crosses transition block 103 and realizes that resistance wire 102 to the indirect heating of light emitting unit 101, is guaranteeing 101 stability of light emitting unit
On the basis of, power consumption is effectively reduced, heating efficiency is improved, reduces encapsulation difficulty, is conducive to the realization of laser miniaturization,
Space can be effectively saved, Application density is improved.In addition, transition block 103 is mounted on TO pedestal 104, facilitate high temperature shape
It radiates under state, further improves the stability of light emitting unit 101.
Finally, it should be noted that the above various embodiments is only to illustrate the technical solution of the embodiment of the present invention, rather than it is right
It is limited；Although the embodiment of the present invention is described in detail referring to foregoing embodiments, the ordinary skill of this field
Personnel are it is understood that it is still possible to modify the technical solutions described in the foregoing embodiments, or to part
Or all technical features are equivalently replaced；And these are modified or replaceed, it does not separate the essence of the corresponding technical solution
The range of each embodiment technical solution of the embodiment of the present invention.
Claims (10)
1. a kind of laser of TO encapsulation, which is characterized in that including light emitting unit, resistance wire, transition block, TO pedestal and TO
Cap；
Wherein, the light emitting unit and the resistance wire are fixedly arranged in the transition block, and the resistance wire is for working as laser
When the temperature of device is in preset temperature range, heating is carried out to the transition block and generates heat, the heat is passed through
The transition block is transmitted to the light emitting unit；
The transition block is mounted on the TO pedestal, and the TO pedestal and TO cap cooperation carry out TO encapsulation.
2. laser according to claim 1, which is characterized in that the resistance wire is fixedly arranged on the mistake by sputtering mode
It crosses on block.
3. laser according to claim 1, which is characterized in that the light emitting unit is fixedly arranged on the resistance wire
On the first surface of the transition block, heat insulation layer is provided with around the first surface.
4. laser according to claim 1, which is characterized in that further include backlight monitoring chip, the backlight monitors core
Piece is installed on the TO pedestal, and the backlight monitoring chip is located at the optical path axis that the light emitting unit issues laser signal
On.
5. laser according to claim 1, which is characterized in that the TO pedestal includes several pins, the light hair
Unit and the resistance wire is penetrated to connect with the corresponding pin by spun gold respectively.
6. laser according to claim 1, which is characterized in that the material of the transition block is ceramics insulator.
7. laser according to claim 1, which is characterized in that the light emitting unit is laser diode.
8. laser according to claim 3, which is characterized in that the heat insulation layer is by first to the transition block
It is passivated around surface and to be formed.
9. laser according to claim 5, which is characterized in that further include control unit；
When the temperature of the laser is in the preset temperature range, described control unit is to the corresponding pipe of the resistance wire
Foot applies voltage, so that the resistance wire, which carries out heating to the transition block, generates heat, the heat passes through the transition block
It is transmitted to the light emitting unit.
10. laser according to claim 9, which is characterized in that it further include temperature monitoring unit, the temperature monitoring list
Member is connect with described control unit, and the temperature monitoring unit is used to send the temperature of the laser to the control single
Member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811051397.1A CN109217103A (en) | 2018-09-10 | 2018-09-10 | A kind of laser of TO encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811051397.1A CN109217103A (en) | 2018-09-10 | 2018-09-10 | A kind of laser of TO encapsulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109217103A true CN109217103A (en) | 2019-01-15 |
Family
ID=64987989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811051397.1A Pending CN109217103A (en) | 2018-09-10 | 2018-09-10 | A kind of laser of TO encapsulation |
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| CN (1) | CN109217103A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110954999A (en) * | 2019-12-27 | 2020-04-03 | 长飞光纤光缆股份有限公司 | Optical transceiver |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101841120A (en) * | 2010-01-22 | 2010-09-22 | 上海高意激光技术有限公司 | TO packaged mini wide temperature solid laser |
| CN105261929A (en) * | 2015-07-17 | 2016-01-20 | 武汉欧普兰光电技术股份有限公司 | Transistor outline (TO)-CAN packaged semiconductor laser and fabrication method thereof |
| US20170093118A1 (en) * | 2014-05-20 | 2017-03-30 | Chem Optics Inc. | External cavity type tunable wavelength laser module for to-can packaging |
-
2018
- 2018-09-10 CN CN201811051397.1A patent/CN109217103A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101841120A (en) * | 2010-01-22 | 2010-09-22 | 上海高意激光技术有限公司 | TO packaged mini wide temperature solid laser |
| US20170093118A1 (en) * | 2014-05-20 | 2017-03-30 | Chem Optics Inc. | External cavity type tunable wavelength laser module for to-can packaging |
| CN105261929A (en) * | 2015-07-17 | 2016-01-20 | 武汉欧普兰光电技术股份有限公司 | Transistor outline (TO)-CAN packaged semiconductor laser and fabrication method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110954999A (en) * | 2019-12-27 | 2020-04-03 | 长飞光纤光缆股份有限公司 | Optical transceiver |
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