CN110137803A - A kind of laser (VCSEL) encapsulating structure - Google Patents
A kind of laser (VCSEL) encapsulating structure Download PDFInfo
- Publication number
- CN110137803A CN110137803A CN201910442918.4A CN201910442918A CN110137803A CN 110137803 A CN110137803 A CN 110137803A CN 201910442918 A CN201910442918 A CN 201910442918A CN 110137803 A CN110137803 A CN 110137803A
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- CN
- China
- Prior art keywords
- laser
- vcsel
- chip
- encapsulating structure
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention patent discloses a kind of low induction reactance, high electro-optical efficiency vertical cavity surface emitting laser (VCSEL) encapsulating structure, by way of the face N being gone out light VCSEL chip of laser and the face P goes out the encapsulation of light VCSEL chip-in series, reduce the package lead between electrode, reduce the induction reactance of loop, promote light pulse rising edge, because using the form of Series Package, laser resistance increases, chip of laser is set to obtain more pressure drops in driving loop, it is corresponding to reduce the pressure drop for reducing other electronic components in driving circuit, thereby reduce the power consumption of other electronic components.Further, by two groups of above-mentioned laser Series Package structures in parallel, loop inductance, the rising edge of improving laser device light pulse signal can be further decreased.
Description
Technical field
The present invention relates to a kind of low induction reactance, high electro-optical efficiency vertical cavity surface emitting laser (VCSEL) encapsulating structure,
Belong to laser field.
Background technique
Laser radar applies more and more extensive, master of the present invention in fields such as unmanned, AGV trolley, intelligent security guard, avoidances
Solve the problems, such as low induction reactance, high conversion efficiency VCSEL individual laser package.Currently, most of VCSEL lasers are all using single
The Series Package form of piece modularized encapsulation perhaps similar cake core is such as all that the face N goes out the VCSEL of light or is all that the face P goes out
The VCSEL of light, and these packing forms will lead to the increase of the encapsulation bonding wire between electrode, driving circuit inductance increases,
It is poor so as to cause laser optical rising edge of a pulse.The face N by being gone out light VCSEL chip of laser and the face P goes out light VCSEL by the present invention
The form of chip-in series encapsulation, reduces the encapsulation bonding wire between electrode, reduces the induction reactance of loop, promotes light pulse and rises
Edge, because using the form of Series Package, laser resistance increases, and obtains chip of laser in driving loop more
Pressure drop, it is corresponding to reduce the pressure drop for reducing other electronic components in driving circuit, thereby reduce other electronics member devices
The power consumption of part.Further, by two groups of above-mentioned laser Series Package structures in parallel, loop inductance can be further decreased,
The rising edge of improving laser device light pulse signal.
Summary of the invention
It is an object of the invention to propose a kind of low induction reactance, high electro-optical efficiency vertical cavity surface emitting laser
(VCSEL) encapsulating structure, including aluminium nitride ceramics driving plate, the face N go out light VCSEL chip of laser, the face P goes out light VCSEL chip
And even mating plate is constituted.
The technical solution used in the present invention is: by the face N being gone out light VCSEL chip of laser and the face P goes out light VCSEL core
The form of piece Series Package reduces the encapsulation bonding wire between electrode, reduces the induction reactance of loop, promotes light pulse and rises
Edge.Because using the form of Series Package, laser resistance is caused to increase, chip of laser obtains more in driving loop
Pressure drop, it is corresponding to reduce the pressure drop for reducing other electronic components in driving circuit, thereby reduce other electronics member
The power consumption of device.Further, by two groups of above-mentioned laser Series Package structures in parallel, loop inductance can be further decreased,
The rising edge of improving laser device light pulse signal.Further, in the optionally even mating plate of facet surface encapsulation angle, Ke Yishi
The Uniform Illumination of existing optional angle.
Ceramic driving circuit substrate of the present invention is aluminium nitride ceramics, thickness 0.5mm ~ 1mm, and driving circuit can realize 1A
The peak point current of ~ 40A, voltage 2V ~ 30V, trigger Signal Regulation range 1ns ~ 1us.
Chip of laser of the present invention is that the face N goes out light and the face P goes out the VCSEL chip of laser of light, the laser
Chip wavelength is 850nm or 940nm.
The even optional range of mating plate angle of the present invention is at 1 ° ~ 120 °.
Beneficial effect caused by the present invention
1, photoelectricity integration packaging, effectively shortens drive control circuit circuit, realizes the output of high-frequency narrow-pulse laser, in light light pulse
It rises along faster；
2, small in size, it is integrated to be easy to modularization；
3, driving peak point current is high, it is possible to provide and the peak point current of 1A ~ 200A, basic unit module can realize high-power output, and
Power adjustable；
4, trigger signal synchronously control, pulse-width regulated range 1ns ~ 1us realize that light pulse signal wide scope is adjusted；
5, higher peak power output is realized by polarization coupling technology and self-focusing lens fiber coupling technique；
6, since aluminum nitride ceramic substrate, oxygen-free copper outer casing base have extraordinary thermal conductivity, electricity can be exported rapidly
Heat caused by sub- component, chip of laser is in component, chip of laser at one lower temperature and works.
Detailed description of the invention
Fig. 1 is individual laser package structural schematic diagram of the present invention.
Fig. 2 is laser submodule of the present invention series connection schematic diagram.
Fig. 3 is schematic diagram of the embodiment of the present invention.
Fig. 4 is the even mating plate package position schematic diagram of the present invention.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
Figure description embodiment is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
As shown in Figure 1, laser module goes out light VCSEL chip of laser 2 by the face N, the face P goes out light VCSEL chip 3, spun gold
Connecting line 4, ceramic driving circuit substrate 1, even mating plate 5 form.
In embodiments of the present invention, as shown in figure 3, the face N goes out optical chip 2 and the face P goes out optical chip 3 and passes through spun gold connecting line 4
Series Package forms a submodule, then by multiple Series Package wired in parallel, is fixed to the nitrogen with driving circuit together
Change on aluminium ceramic substrate 1, even mating plate 5 is finally attached to the upper surface of chip of laser 2/3.
Claims (8)
1. a kind of laser (VCSEL) encapsulating structure, which is characterized in that the encapsulating structure goes out light by Laser Driven plate, the face N
VCSEL chip of laser, the face P go out light VCSEL chip and even mating plate composition；The face N goes out the face light VCSEL and P and goes out light
VCSEL chip-in series, centre is connected by gold wire bonding forms current loop, is arrived by cascaded structure described in several groups of parallel connection
On drive circuit board, even mating plate is encapsulated in chip of laser light-emitting surface again later, realizes Low ESR, high electro-optical efficiency
Laser structure.
2. a kind of laser (VCSEL) encapsulating structure according to claim 1, which is characterized in that the face N goes out light VCSEL and P
Face goes out light VCSEL chip-in series, intermediate only to connect composition current loop with one group of gold wire bonding, effectively reduces electric current and returns
Road reduces package inductance, while the pressure drop at chip of laser both ends can be improved, and promotes photoelectric conversion efficiency, chip string
Connection encapsulation quantity can be 2 ~ 4.
3. a kind of laser (VCSEL) encapsulating structure according to claim 1, which is characterized in that pass through several groups of power in parallel
Benefit require 2 described in chip of laser cascaded structure, can further decrease loop inductance, improving laser device light pulse signal it is upper
Rise edge.
4. a kind of laser (VCSEL) encapsulating structure according to claim 1, which is characterized in that Laser Driven plate is FR4
Plate or aluminium nitride ceramics plate, and Laser Driven plate operating mode is pulse mode.
5. a kind of laser (VCSEL) encapsulating structure according to claim 1, it is characterised in that chip of laser wavelength
850nm or 940nm.
6. a kind of laser (VCSEL) encapsulating structure according to claim 1, which is characterized in that use chip of laser
With the form of driving plate integration packaging, loop inductance is effectively reduced, in pulsed operation, keeps light pulse rising edge precipitous.
7. a kind of laser (VCSEL) encapsulating structure according to claim 1, which is characterized in that use aluminium nitride ceramics
The driving plate of substrate, the high thermal conductivity of aluminium nitride can rapidly distribute the heat of laser and electronic component, improve
The reliability of laser is suitble to superpower laser to use.
8. a kind of laser (VCSEL) encapsulating structure according to claim 1, which is characterized in that even mating plate angle is at 10 °
~ 120 ° of ranges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910442918.4A CN110137803A (en) | 2019-05-26 | 2019-05-26 | A kind of laser (VCSEL) encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910442918.4A CN110137803A (en) | 2019-05-26 | 2019-05-26 | A kind of laser (VCSEL) encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110137803A true CN110137803A (en) | 2019-08-16 |
Family
ID=67581657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910442918.4A Pending CN110137803A (en) | 2019-05-26 | 2019-05-26 | A kind of laser (VCSEL) encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110137803A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146690A (en) * | 2020-01-06 | 2020-05-12 | 常州纵慧芯光半导体科技有限公司 | Laser module and preparation method thereof |
| CN113725724A (en) * | 2021-09-01 | 2021-11-30 | 上海晓本技术服务有限公司 | Laser pulse emitting integrated circuit module, manufacturing method and system |
| CN113933812A (en) * | 2020-07-14 | 2022-01-14 | 上海禾赛科技有限公司 | Light source module of laser radar, laser radar and method for manufacturing light source module |
-
2019
- 2019-05-26 CN CN201910442918.4A patent/CN110137803A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146690A (en) * | 2020-01-06 | 2020-05-12 | 常州纵慧芯光半导体科技有限公司 | Laser module and preparation method thereof |
| CN111146690B (en) * | 2020-01-06 | 2021-09-07 | 常州纵慧芯光半导体科技有限公司 | Laser module and preparation method thereof |
| CN113933812A (en) * | 2020-07-14 | 2022-01-14 | 上海禾赛科技有限公司 | Light source module of laser radar, laser radar and method for manufacturing light source module |
| WO2022012082A1 (en) * | 2020-07-14 | 2022-01-20 | 上海禾赛科技股份有限公司 | Light source module for laser radar, laser radar, and method for manufacturing light source module |
| CN113725724A (en) * | 2021-09-01 | 2021-11-30 | 上海晓本技术服务有限公司 | Laser pulse emitting integrated circuit module, manufacturing method and system |
| CN113725724B (en) * | 2021-09-01 | 2024-02-27 | 上海沛塬电子有限公司 | Laser pulse emission integrated circuit module, manufacturing method and system |
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