CN109196651A - 场效应晶体管结构及其制作方法 - Google Patents

场效应晶体管结构及其制作方法 Download PDF

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Publication number
CN109196651A
CN109196651A CN201680086216.1A CN201680086216A CN109196651A CN 109196651 A CN109196651 A CN 109196651A CN 201680086216 A CN201680086216 A CN 201680086216A CN 109196651 A CN109196651 A CN 109196651A
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bottom gate
nanoribbons
effect transistor
electrode
layer
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CN109196651B (zh
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秦旭东
徐慧龙
张臣雄
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

本发明实施例公开了一种场效应晶体管结构及其制作方法，该场效应晶体管结构包括：底栅电极；底栅介质层；纳米条带沟道层，所述纳米条带沟道层是由多个平行间隔开的双层石墨烯纳米条带构成，所述纳米条带沟道层覆盖于所述底栅介质层的上表面，且与所述底栅介质层的上表面接触；源极和漏极；顶栅介质层；顶栅电极。本发明实施例提供的场效应晶体管结构及其制作方法，能够在不牺牲器件开态电流的情况下，有效地减少栅介质电荷中心的影响，使器件能够有较好地关断，提升器件开关比。

Description

PCT国内申请，说明书已公开。

Claims (13)

  1. PCT国内申请，权利要求书已公开。
CN201680086216.1A 2016-10-28 2016-10-28 场效应晶体管结构及其制作方法 Active CN109196651B (zh)

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PCT/CN2016/103724 WO2018076268A1 (zh) 2016-10-28 2016-10-28 场效应晶体管结构及其制作方法

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CN111584612A (zh) * 2019-04-12 2020-08-25 北京纳米能源与系统研究所 全自驱动石墨烯晶体管、逻辑器件及传感器阵列

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US20210098611A1 (en) * 2019-10-01 2021-04-01 Northwestern University Dual-gated memtransistor crossbar array, fabricating methods and applications of same
CN109979995A (zh) * 2019-04-10 2019-07-05 电子科技大学 一种新型的栅极抽取和注入场效应晶体管结构
CN110676169B (zh) * 2019-09-05 2023-02-28 中国电子科技集团公司第十三研究所 石墨烯胶囊封装晶体管制备方法
CN112986355A (zh) * 2019-12-12 2021-06-18 福建海峡石墨烯产业技术研究院有限公司 双栅结构的石墨烯场效应晶体管生物传感器及其制备方法
CN114604865B (zh) * 2020-12-09 2024-03-01 清华大学 石墨烯纳米带复合结构及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101401213A (zh) * 2006-03-17 2009-04-01 佳能株式会社 使用氧化物膜用于沟道的场效应晶体管及其制造方法
CN103329244A (zh) * 2011-01-07 2013-09-25 国际商业机器公司 具有局部双栅的石墨烯器件
US20140077161A1 (en) * 2011-03-02 2014-03-20 The Regents Of The University Of California High performance graphene transistors and fabrication processes thereof
US20120248414A1 (en) * 2011-03-30 2012-10-04 Samsung Electronics Co., Ltd. Semiconductor Device, Method Of Manufacturing The Same, And Electronic Device Including The Semiconductor Device
US20130017323A1 (en) * 2011-07-14 2013-01-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Preparation of Epitaxial Graphene Surfaces for Atomic Layer Deposition of Dielectrics
CN103855218A (zh) * 2012-12-04 2014-06-11 国际商业机器公司 自对准双栅石墨烯晶体管及其制造方法
CN103346089A (zh) * 2013-06-13 2013-10-09 北京大学深圳研究生院 一种自对准双层沟道金属氧化物薄膜晶体管及其制作方法
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CN104795411A (zh) * 2015-04-15 2015-07-22 重庆大学 栅控石墨烯纳米带阵列THz探测器及调谐方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111584612A (zh) * 2019-04-12 2020-08-25 北京纳米能源与系统研究所 全自驱动石墨烯晶体管、逻辑器件及传感器阵列
CN111584612B (zh) * 2019-04-12 2023-05-05 北京纳米能源与系统研究所 全自驱动石墨烯晶体管、逻辑器件及传感器阵列

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WO2018076268A1 (zh) 2018-05-03

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