CN109196651A - 场效应晶体管结构及其制作方法 - Google Patents

场效应晶体管结构及其制作方法 Download PDF

Info

Publication number
CN109196651A
CN109196651A CN201680086216.1A CN201680086216A CN109196651A CN 109196651 A CN109196651 A CN 109196651A CN 201680086216 A CN201680086216 A CN 201680086216A CN 109196651 A CN109196651 A CN 109196651A
Authority
CN
China
Prior art keywords
bottom gate
nanoribbons
effect transistor
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201680086216.1A
Other languages
English (en)
Other versions
CN109196651B (zh
Inventor
秦旭东
徐慧龙
张臣雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN109196651A publication Critical patent/CN109196651A/zh
Application granted granted Critical
Publication of CN109196651B publication Critical patent/CN109196651B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

本发明实施例公开了一种场效应晶体管结构及其制作方法，该场效应晶体管结构包括：底栅电极；底栅介质层；纳米条带沟道层，所述纳米条带沟道层是由多个平行间隔开的双层石墨烯纳米条带构成，所述纳米条带沟道层覆盖于所述底栅介质层的上表面，且与所述底栅介质层的上表面接触；源极和漏极；顶栅介质层；顶栅电极。本发明实施例提供的场效应晶体管结构及其制作方法，能够在不牺牲器件开态电流的情况下，有效地减少栅介质电荷中心的影响，使器件能够有较好地关断，提升器件开关比。

Description

PCT国内申请，说明书已公开。

Claims (13)

  1. PCT国内申请，权利要求书已公开。
CN201680086216.1A 2016-10-28 2016-10-28 场效应晶体管结构及其制作方法 Active CN109196651B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2016/103724 WO2018076268A1 (zh) 2016-10-28 2016-10-28 场效应晶体管结构及其制作方法

Publications (2)

Publication Number Publication Date
CN109196651A true CN109196651A (zh) 2019-01-11
CN109196651B CN109196651B (zh) 2022-05-10

Family

ID=62024437

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680086216.1A Active CN109196651B (zh) 2016-10-28 2016-10-28 场效应晶体管结构及其制作方法

Country Status (2)

Country Link
CN (1) CN109196651B (zh)
WO (1) WO2018076268A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111584612A (zh) * 2019-04-12 2020-08-25 北京纳米能源与系统研究所 全自驱动石墨烯晶体管、逻辑器件及传感器阵列

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210098611A1 (en) * 2019-10-01 2021-04-01 Northwestern University Dual-gated memtransistor crossbar array, fabricating methods and applications of same
CN109979995A (zh) * 2019-04-10 2019-07-05 电子科技大学 一种新型的栅极抽取和注入场效应晶体管结构
CN110676169B (zh) * 2019-09-05 2023-02-28 中国电子科技集团公司第十三研究所 石墨烯胶囊封装晶体管制备方法
CN112986355A (zh) * 2019-12-12 2021-06-18 福建海峡石墨烯产业技术研究院有限公司 双栅结构的石墨烯场效应晶体管生物传感器及其制备方法
CN114604865B (zh) * 2020-12-09 2024-03-01 清华大学 石墨烯纳米带复合结构及其制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101401213A (zh) * 2006-03-17 2009-04-01 佳能株式会社 使用氧化物膜用于沟道的场效应晶体管及其制造方法
US20120248414A1 (en) * 2011-03-30 2012-10-04 Samsung Electronics Co., Ltd. Semiconductor Device, Method Of Manufacturing The Same, And Electronic Device Including The Semiconductor Device
US20130017323A1 (en) * 2011-07-14 2013-01-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Preparation of Epitaxial Graphene Surfaces for Atomic Layer Deposition of Dielectrics
CN103329244A (zh) * 2011-01-07 2013-09-25 国际商业机器公司 具有局部双栅的石墨烯器件
CN103346089A (zh) * 2013-06-13 2013-10-09 北京大学深圳研究生院 一种自对准双层沟道金属氧化物薄膜晶体管及其制作方法
US20140077161A1 (en) * 2011-03-02 2014-03-20 The Regents Of The University Of California High performance graphene transistors and fabrication processes thereof
CN103855218A (zh) * 2012-12-04 2014-06-11 国际商业机器公司 自对准双栅石墨烯晶体管及其制造方法
CN104009091A (zh) * 2014-06-06 2014-08-27 湘潭大学 一种基于规整性碳纳米管条纹阵列的铁电场效应晶体管及其制备方法
CN104795411A (zh) * 2015-04-15 2015-07-22 重庆大学 栅控石墨烯纳米带阵列THz探测器及调谐方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8895352B2 (en) * 2009-06-02 2014-11-25 International Business Machines Corporation Method to improve nucleation of materials on graphene and carbon nanotubes
US8105928B2 (en) * 2009-11-04 2012-01-31 International Business Machines Corporation Graphene based switching device having a tunable bandgap
CN104241378B (zh) * 2014-09-10 2017-05-03 北京大学 一种双层石墨烯隧穿场效应晶体管及其制备方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101401213A (zh) * 2006-03-17 2009-04-01 佳能株式会社 使用氧化物膜用于沟道的场效应晶体管及其制造方法
CN103329244A (zh) * 2011-01-07 2013-09-25 国际商业机器公司 具有局部双栅的石墨烯器件
US20140077161A1 (en) * 2011-03-02 2014-03-20 The Regents Of The University Of California High performance graphene transistors and fabrication processes thereof
US20120248414A1 (en) * 2011-03-30 2012-10-04 Samsung Electronics Co., Ltd. Semiconductor Device, Method Of Manufacturing The Same, And Electronic Device Including The Semiconductor Device
US20130017323A1 (en) * 2011-07-14 2013-01-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Preparation of Epitaxial Graphene Surfaces for Atomic Layer Deposition of Dielectrics
CN103855218A (zh) * 2012-12-04 2014-06-11 国际商业机器公司 自对准双栅石墨烯晶体管及其制造方法
CN103346089A (zh) * 2013-06-13 2013-10-09 北京大学深圳研究生院 一种自对准双层沟道金属氧化物薄膜晶体管及其制作方法
CN104009091A (zh) * 2014-06-06 2014-08-27 湘潭大学 一种基于规整性碳纳米管条纹阵列的铁电场效应晶体管及其制备方法
CN104795411A (zh) * 2015-04-15 2015-07-22 重庆大学 栅控石墨烯纳米带阵列THz探测器及调谐方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111584612A (zh) * 2019-04-12 2020-08-25 北京纳米能源与系统研究所 全自驱动石墨烯晶体管、逻辑器件及传感器阵列
CN111584612B (zh) * 2019-04-12 2023-05-05 北京纳米能源与系统研究所 全自驱动石墨烯晶体管、逻辑器件及传感器阵列

Also Published As

Publication number Publication date
CN109196651B (zh) 2022-05-10
WO2018076268A1 (zh) 2018-05-03

Similar Documents

Publication Publication Date Title
CN109196651A (zh) 场效应晶体管结构及其制作方法
He et al. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
Wu et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
Aikawa et al. Thin-film transistors fabricated by low-temperature process based on Ga-and Zn-free amorphous oxide semiconductor
CN106910776B (zh) 基于高k栅介质的大面积二硫化钼场效应晶体管及其制备
JP6043022B2 (ja) 半導電性グラフェン構造、このような構造の形成方法およびこのような構造を含む半導体デバイス
Dang et al. Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress
Yang et al. Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors
CN105742345A (zh) 一种隧穿场效应晶体管及其制备方法
Lee et al. Transferred large area single crystal MoS2 field effect transistors
CN109935637A (zh) 一种高压薄膜晶体管
Nakata et al. Influence of oxide semiconductor thickness on thin-film transistor characteristics
Yoon et al. An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally off” operation
Chen et al. Dramatic switching behavior in suspended MoS2 field-effect transistors
CN108417636A (zh) 一种二维相变场效应晶体管及其制备方法
Bae et al. First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors
Kaczmarski et al. Transparent Ru–Si–O/In–Ga–Zn–O MESFETs on flexible polymer substrates
Zhang et al. Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility
Hanna et al. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor
Kawarada Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits
TWI588944B (zh) 具有漂移區的高壓無接面場效元件及其製造方法
CN110323277B (zh) 场效应晶体管及其制备方法
Choi et al. Enhancement mode p-channel SnO thin-film transistors with dual-gate structures
CN107342320B (zh) 无结型隧穿场效应晶体管及制备方法
Shi et al. Investigation of the interface characteristics of Y2O3/GaAs under biaxial strain, triaxial strain, and non-strain conditions

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant