CN109192787A - A kind of groove type anode fast recovery diode and manufacturing method with the control of the two poles of the earth Schottky - Google Patents
A kind of groove type anode fast recovery diode and manufacturing method with the control of the two poles of the earth Schottky Download PDFInfo
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- CN109192787A CN109192787A CN201810801921.6A CN201810801921A CN109192787A CN 109192787 A CN109192787 A CN 109192787A CN 201810801921 A CN201810801921 A CN 201810801921A CN 109192787 A CN109192787 A CN 109192787A
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- 238000011084 recovery Methods 0.000 title claims abstract description 52
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- 239000002184 metal Substances 0.000 claims abstract description 89
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- 230000002441 reversible effect Effects 0.000 claims description 33
- 238000002347 injection Methods 0.000 claims description 23
- 239000007924 injection Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000007665 sagging Methods 0.000 claims description 7
- 238000004026 adhesive bonding Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 6
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- 230000008020 evaporation Effects 0.000 claims description 6
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- 150000003624 transition metals Chemical class 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000000717 platinum sputter deposition Methods 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims description 2
- 230000007480 spreading Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 239000000284 extract Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 239000010953 base metal Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
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- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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Abstract
The present invention relates to a kind of groove type anode fast recovery diodes and its manufacture with the control of the two poles of the earth Schottky, it include: cathodic metal, there is N-type intrinsic region above cathodic metal, there is anode metal above N-type intrinsic region, lightly doped n type region and the heavily doped n-type region for being spaced apart from each other distribution are equipped on cathodic metal, the bottom in lightly doped n type region and cathodic metal are Schottky contacts, it is equipped between N-type intrinsic region and anode metal and is spaced apart from each other the heavily doped P-type region of distribution and p type island region domain is lightly doped, and, the upper surface in heavily doped P-type region is lower than the upper surface that p type island region domain is lightly doped, form groove type anode region, p type island region domain is lightly doped and anode metal is Schottky contacts.The manufacturing method of the groove type anode fast recovery diode of the two poles of the earth Schottky control, which is characterized in that the Schottky contacts of anode surface and side wall can be formed simultaneously by step etching.
Description
Technical field
The invention mainly relates to power semiconductor device technology fields, and in particular to it is a kind of with the two poles of the earth Schottky control
Groove type anode fast recovery diode.
Background technique
In various frequency changer circuits, electric power electronic system, the major loop in circuit whether uses commutation cutoff
Thyristor, or using there is the novel switched device of self-switching-off capability, require one it is in parallel therewith and continuous current circuit can be provided
Diode (subsequent be referred to as FRD).As the frequency of power electronic devices and performance constantly improve in these circuit systems,
In order to match with its turn-off capacity, FRD must have quick turn-on and turn-off ability, that is, have lower forward conduction
Voltage VFWith extremely short reverse recovery time.Simultaneously in order to lifting system efficiency and reliability, FRD just have to have compared with
Small reverse recovery current and soft recovery characteristics.
High pressure, high current circuit in, traditional power P iN diode have good reverse withstand voltage performance, and
Very low forward conduction voltage VFIt just will appear biggish forward conduction electric current down.Also therefore, so that tradition PiN diode exists
During forward conduction, the minority carrier total amount being stored in intrinsic region is more, thus during Reverse recovery, so that intrinsic region
In the speed that extracts of few son it is slower, eventually lead to that reverse recovery time is longer, the serious power consumption and limitation for increasing circuit system
The promotion of system operating frequency.In order to improve the switching speed of FRD, lifetime control techniques are often used, metal impurities are such as used
It adulterates with electronic irradiation technique and reduces the service life of few son in intrinsic region, with the technology, though it can very effectively shorten the anti-of FRD
It to recovery time, lifting switch speed, but can also cause higher reverse leakage current simultaneously, it is normal to seriously affect circuit system
Logic function also results in the hard recovery characteristics of diode, causes the oscillation of electric current, voltage in parasitic inductance in circuit, excessively high
Oscillating current and voltage, the reliability of device can be seriously threatened.
Therefore, there is FRD compared with low forward conduction voltage VFOn the basis of lesser reverse leakage current, realize shorter
Reverse recovery time simultaneously make diode have good soft recovery characteristics be FRD the main direction of development, soft recovery characteristics
Better, then better to the inhibitory effect of concussion during FRD Reverse recovery, this has weight to the development and design of power integrated circuit
The meaning wanted.
Summary of the invention
The present invention in view of the above-mentioned problems, propose it is a kind of with the two poles of the earth Schottky control groove type anode restore two poles fastly
Pipe.The structure realizes extremely short reverse recovery time and lower forward conduction voltage VF, and during inhibiting Reverse recovery
The oscillation of circuit enhances the robustness of device.
A kind of groove type anode fast recovery diode with the control of the two poles of the earth Schottky, comprising: cathodic metal, in cathode gold
There is N-type intrinsic region above category, have anode metal above N-type intrinsic region, which is characterized in that is equipped on cathodic metal light
Doped N-type region and heavily doped n-type region, the lightly doped n type region and the heavily doped n-type region are spaced apart from each other setting,
The bottom in lightly doped n type region and cathodic metal are Schottky contacts, also, the lightly doped n type region is prolonged to N-type intrinsic region
It stretches and the extension for making the heavily doped n-type region be lightly doped n-type region is covered, the N-type intrinsic region, which is located at, gently mixes
On the upper surface of miscellaneous n-type region extension；It is equipped with heavily doped P-type region between N-type intrinsic region and anode metal and gently mixes
Miscellaneous p type island region domain, the heavily doped P-type region and the p type island region domain that is lightly doped are spaced apart from each other setting, the heavily doped P-type region
Longitudinal diffusion depth ratio to be lightly doped p type island region domain deeper, the anode metal is located at heavily doped P-type region and p type island region is lightly doped
On the upper surface in domain, also, upper surface and the anode metal that p type island region domain is lightly doped are Schottky contacts.
Further, heavily doped P-type region is lower than being lightly doped p type island region domain and by heavily doped P-type region and adjacent thereto
Two sides that p type island region domain is lightly doped enclose the sagging groove constituted towards N-type intrinsic region, and the anode metal sink to described
Extend and be full of the groove that sink in groove, the anode metal sinking in groove is schottky junctions with the side that p type island region domain is lightly doped
Touching.
Further, the upper surface in the heavily doped P-type region of recess will be between the longitudinal diffusion depth that p type island region domain is lightly doped
It is interior, and after diffusion, the impurity concentration of heavily doped P-type sections bottom is higher than the impurity concentration at least 0.5 of lightly doped region bottom
A order of magnitude.
Further, p type island region domain is lightly doped in the anode and anode metal interface uses p-type Schottky contacts, can
Using Ni metal.The heavily doped P-type region of anode recess and anode metal interface use Ohmic contact, and Al can be used.
Further, the cathode lightly doped n type region and cathodic metal interface use N-type Schottky contacts, can
Using Mg metal.Cathode heavily doped n-type region and cathodic metal interface use Ohmic contact, and Al can be used.
Further, weight doped in concentrations profiled p-type peak width WPFor (3 μm~12 μm), the sagging depth t of anode metalraIt is 2
μm~8 μm, the width W between two neighboring heavily doped n-type regionNIt is 4 μm~10 μm.
Further, a kind of manufacturing method of the groove type anode fast recovery diode with the control of the two poles of the earth Schottky, institute
The method of stating includes the following steps:
1) manufacture cathode lightly doped n type region: on the basis of N-type intrinsic region, n-type doping impurity is injected at the back side
After phosphorus, is pushed away trap and forms lightly doped n type region,
2) manufacture the interrupted heavily doped n-type region of cathode: lightly doped n type region formed after, through gluing, exposure, development,
After etching photoresist, forms heavily doped N-type and injects window, carry out N-type heavy doping, and remove photoresist,
3) p type island region domain is lightly doped in manufacture anode: on the basis of N-type intrinsic region, the p-type boron of front injection low concentration
After doping, is pushed away trap formation and p type island region domain is lightly doped,
4) manufacture anode heavily doped P-type region: the first spacing that etches away on p type island region domain is lightly doped is equal, width WP, it is deep
Degree is traSilicon, then through gluing, exposure, development, etching photoresist after, finally carry out p-type boron doping after formed p type island region domain,
And remove photoresist,
5) anode Schottky area is formed: with Ni and Pt sputtering or being evaporated in front side of silicon wafer formation transition metal films, economic cooperation
Schottky contacts are formed after gold and removing, etch away the region for not needing Schottky contacts,
6) cathode schottky region is formed: with Al and Mg sputtering or being evaporated in silicon wafer reverse side formation transition metal films, economic cooperation
Schottky junctions are formed after gold and removing, etch away the region for not needing Schottky contacts,
7) cathode metallization: making back metal Al layers in silicon chip back side with evaporation or sputtering method, form metal cathode layer,
8) anode metallization: again in front side of silicon wafer sputtering or evaporation or plating metal Al film, ohm is formed through photoetching, alloy
The groove type anode fast recovery diode of the two poles of the earth Schottky control is made in contact.
Further, the step 5) and 6) in, can by select have different work functions metal come control anode and
The height of the injection efficiency of cathode carrier.
Compared with prior art, the present invention has the advantage that
The present invention efficiently reduces reverse recovery time.The process essence of diode reverse recovery is minority carrier
Extraction process.Mainly there are two aspects for the factor of influence reverse recovery time, first, being stored in intrinsic region during forward conduction
The total amount of middle minority carrier, total amount is smaller, and reverse recovery time is shorter；Second, during Reverse recovery, the pumping of minority carrier
The length in path is taken, extraction path is shorter, then reverse recovery time is shorter.Structure of the invention can effectively reduce reversed extensive
The multiple time, there are two aspects for chief reason.Firstly, the minority carrier being stored in intrinsic region is (empty during forward conduction
Cave) total amount greatly reduces.The reason is as follows that structure of the invention is used in anode region is lightly doped p type island region domain and heavily doped P-type region
It distributes alternately, during forward conduction, electronics enters this from the alternate cathode zone of heavily doped n-type region and lightly doped n type region
Sign area is when flowing to anode metal again, since N-type intrinsic region and the Built-in potential being lightly doped between the domain of p type island region are compared to its (N-type sheet
Levy area) it is lower between heavily doped P-type region, so first from N-type intrinsic region, p type island region domain is lightly doped in inflow for electronics almost all.
Then, structure of the invention anode, which uses, is lightly doped for Schottky contacts between p type island region domain and groove type anode metal, due to Xiao Te
Base Metal is contacted with P-type semiconductor is lightly doped, and can be generated the low-resistance region of electronics in the anti-drag barrier of contact surface formation electronics, be made
Electronics can be more easier to pass through, and anode shortens the path that electronics reaches anode metal using groove type structure.To sum up institute
It states, structure of the invention makes electronics of the N-type intrinsic region near anode region be not likely to produce accumulation, therefore the electron concentration at this
Can be lower, due to the presence of conductivity modulation effect, so that the concentration of electronics is identical with hole concentration in intrinsic region, therefore in anode
The injection efficiency in side hole is minimized, and structure of the invention can be by adjusting WP、traControl the injection efficiency in hole,
WPSmaller, traBigger, hole injection efficiency is lower.Similarly, the electron injection efficiency of cathode side may make to be minimized, WNMore
Greatly, electron injection efficiency is lower.Since the injection efficiency of the two poles of the earth carrier can reduce, so that being stored in intrinsic region
Few sub- total amount substantially reduce, and then shorten reverse recovery time.Secondly, being stored in N-type intrinsic region during Reverse recovery
Hole, almost all flow into high-concentration dopant p type island region domain flow out anode metal again because the p type island region domain of high concentration compared to
Low-doped p type island region domain is the low impedance path in hole.Structure of the invention uses groove type anode metal, by control anode
Metal traDepth, come control hole extract path length, traIt is bigger, then extract that path is shorter, and Reverse recovery speed is got over
Fastly.But excessive traMeeting is so that the breakdown voltage of device reduces.Structure of the invention, optimal traIt is 8 μm.In conjunction with two above
The advantages of aspect, structure of the invention can efficiently reduce reverse recovery time.
The present invention restrained effectively the oscillation of circuit during Reverse recovery.In reversely restoring process, in the unit time
The hole charge sum for being swept out anode metal electrodes from N-type intrinsic region is defined as Q1, the current definition for flowing through PiN diode is
I, the then speed that anode extracts hole charge in the unit time are defined as dQ1/ dt, dQ1/ dt is bigger, can cause biggish reversed
Di/dt causes to vibrate to generate big induced voltage peak value in the parasitic inductance with Diode series.Traditional PiN bis-
Pole pipe is dense since the two poles of the earth carrier injects, and emission effciency is very big, so minority carrier is in base area when forward conduction
Catenary suspension type continuous vulcanization distribution is formed, is having very high carrier concentration close to the base area part of cathode and anode, is leading to the extraction of carrier
Velocity variations are larger, cause very big overshoot voltage, cause acutely to vibrate.And structure proposed by the present invention uses gently in anode
Doped p-type region and heavily doped P-type region are alternately distributed, and anode uses lightly doped n type region and intermittent heavily doped n-type region
Reduce the emission effciency of device, and structure of the invention can pass through and adjust WP、traTo control the injection efficiency in hole, WPMore
Small, traBigger, hole injection efficiency is lower.By adjusting WNTo adjust the injection efficiency of electronics, WNIt is bigger, electron injection efficiency
It is lower.So that device, in forward conduction, the slope along the distribution curve of anode to cathode is very gentle, so, reversed extensive
During multiple, the hole number Q of anode metal is extracted in intrinsic region1Variable quantity at any time is smaller, therefore during Reverse recovery,
The velocity variations very little that minority carrier extracts, thus the overshoot voltage very little generated on inductance, so can effectively press down
Damping is swung.
The manufacturing method of structure of the invention can be formed simultaneously the schottky junctions of anode surface and side wall by step etching
Touching.Technique is easily-controllable, can pass through the depth t of control etching SiraIt controls the contact area of side wall Schottky, and does not influence device
Breakdown voltage, processing compatibility is good, does not need to increase additional mask plate, preparation cost is low.
Therefore device of the present invention is on the basis of the stable breakdown voltage for maintaining device is good and forward conduction voltage drop is lower,
The device turn-off time is significantly reduced again and improves the inhibition lasing capability of device Reverse recovery, enhances the robustness of device,
So that this device is able to maintain lower switching loss and conduction loss at work, so that it is more suitable for work in various open relations
In system.
Detailed description of the invention
Fig. 1 show traditional PiN diode sectional structure chart.
Fig. 2 show the sectional structure chart of structure of the invention.
Fig. 3 show structure of the invention process flow chart.
It is 500A/cm that Fig. 4, which show structure of the invention forward current density,2When electronic current distribution map.
It is 500A/cm that Fig. 5, which show structure of the invention forward current density,2When hole current distribution map.
Fig. 6 show traditional PiN diode and structure of the invention forward current density is 500A/cm2When, along section x=
Carrier Profile comparison diagram at AA '.
Fig. 7 show traditional PiN diode and the structure of the invention t in reversely restoring process1Moment, along section x=BB '
The hole density comparison diagram at place.
Fig. 8 show traditional PiN diode and structure of the invention reversely restoring process electric current, voltage-contrast figure.
Specific embodiment
With reference to the accompanying drawing, it elaborates to the present invention:
A kind of groove type anode fast recovery diode with the control of the two poles of the earth Schottky is as shown in Figure 2, comprising: cathodic metal
1, there is N-type intrinsic region 4 in the top of cathodic metal 1, has anode metal 7 in the top of N-type intrinsic region 4, which is characterized in that in yin
Pole metal 1 is equipped with lightly doped n type region 3 and heavily doped n-type region 2, the lightly doped n type region 3 and the heavily doped N-type
Region 2 is spaced apart from each other setting, and the bottom in lightly doped n type region 3 and cathodic metal 1 are Schottky contacts 8, also, described gently mixes
The extension institute that miscellaneous n-type region 3 extends to N-type intrinsic region 4 and the heavily doped n-type region 2 is made to be lightly doped n-type region 3
Covering, the N-type intrinsic region 4 is located on the upper surface of 3 extension of lightly doped n type region；In N-type intrinsic region 4 and anode gold
Belong to and be equipped with heavily doped P-type region 5 between 7 and p type island region domain 6 is lightly doped, p type island region is lightly doped with described in the heavily doped P-type region 5
Domain 6 is spaced apart from each other setting, and it is deeper that the longitudinal diffusion depth ratio in the heavily doped P-type region 5 is lightly doped p type island region domain 6, the anode
Metal 7 is located at heavily doped P-type region 5 and is lightly doped on the upper surface in p type island region domain 6, also, the upper surface in p type island region domain 6 is lightly doped
It is Schottky contacts 101 with anode metal 7.
In this example, heavily doped P-type region 5 lower than be lightly doped p type island region domain 6 and by heavily doped P-type region 5 with its phase
The side that p type island region domain 6 is lightly doped in adjacent two encloses the sagging groove constituted towards N-type intrinsic region 4, the anode metal 7 to
Extend and be full of the groove that sink in the sagging groove, the anode metal 7 sinking in groove and the side that p type island region domain 6 is lightly doped
For Schottky contacts 102.
The upper surface in the heavily doped P-type region 5 of recess is no in the longitudinal diffusion depth that p type island region domain 6 is lightly doped
Then, it will affect the breakdown voltage of device.And after spreading, the impurity concentration of 5 bottom of heavily doped P-type region is higher than lightly doped region
The impurity concentration of 6 bottoms at least 0.5 order of magnitude, the i.e. impurity concentration of 5 bottom of heavily doped P-type region are higher than lightly doped region
At least 5 times of the impurity concentration of 6 bottoms.
P type island region domain 6 and 7 interface of anode metal is lightly doped using p-type Schottky contacts 101 and 102 in anode, and Ni can be used
Metal.The heavily doped P-type region 5 of anode recess and 7 interface of anode metal use Ohmic contact 11, and Al can be used.
Cathode lightly doped n type region 3 and 1 interface of cathodic metal use N-type Schottky contacts 8, and Mg metal can be used.Yin
Pole heavily doped n-type region 2 and 1 interface of cathodic metal use Ohmic contact 9, and Al can be used.
5 width W of weight doped in concentrations profiled p type island region domainPIt is 3 μm~12 μm, the sagging depth t of anode metal 7raIt is 2 μm~8 μm,
Width W between two neighboring heavily doped n-type regionNIt is 4 μm~10 μm.
The present invention also provides it is a kind of with the two poles of the earth Schottky control groove type anode fast recovery diode manufacturing method,
The method includes the following steps as shown in Figure 3:
1) manufacture cathode lightly doped n type region 3: on the basis of N-type intrinsic region 4, n-type doping impurity is injected at the back side
After phosphorus (phosphorus), is pushed away trap and forms lightly doped n type region 3,
2) it manufactures the interrupted heavily doped n-type region 2 of cathode: after lightly doped n type region 3 is formed, through gluing, exposure, showing
After shadow, etching photoresist, forms heavily doped N-type and injects window, carry out N-type heavy doping, and remove photoresist,
3) p type island region domain 6 is lightly doped in manufacture anode: on the basis of N-type intrinsic region 4, the p-type of front injection low concentration
After boron (boron) doping, is pushed away trap formation and p type island region domain 6 is lightly doped,
4) manufacture anode heavily doped P-type region 5: the first spacing that etches away on p type island region domain 6 is lightly doped is equal, width WP、
Depth is traSilicon, then through gluing, exposure, development, etching photoresist after, finally carry out p-type boron doping after form p type island region
Domain 5, and remove photoresist,
5) anode Schottky area is formed: with Ni and Pt sputtering or being evaporated in front side of silicon wafer formation transition metal films, economic cooperation
Schottky contacts 101 and 102 are formed after gold and removing, etch away the region for not needing Schottky contacts,
6) cathode schottky region is formed: with Al and Mg sputtering or being evaporated in silicon wafer reverse side formation transition metal films, economic cooperation
Schottky contacts 8 are formed after gold and removing, etch away the region for not needing Schottky contacts,
7) cathode metallization: making back metal Al layers in silicon chip back side with evaporation or sputtering method, form metal cathode layer,
8) anode metallization: again in front side of silicon wafer sputtering or evaporation or plating metal Al film, ohm is formed through photoetching, alloy
The groove type anode fast recovery diode of the two poles of the earth Schottky control is made in contact.
Method and step 5 provided by the invention) and 6) in, can be by selecting the metal with different work functions control sun
The height of the injection efficiency of pole and cathode carrier.
The present invention will be further described with reference to the accompanying drawing.
The working principle of the invention:
During forward conduction, anode metal connects high potential, and cathodic metal connects low potential.Hole almost all is from heavy doping
N-type intrinsic region 4 is injected in p type island region domain 5, then flows out cathodic metal through lightly doped n type region 3.Electronics is then by heavily doped n-type region 2
N-type intrinsic region 4 is injected by lightly doped n type region 3, then flows to the p-type Xiao Te of anode recess sidewall through p type island region domain 6 is lightly doped
Base Metal 102.The height of concentration is accumulated depending on the electronics at this in the height of the injection efficiency at anode intrinsic region in hole
It is low, firstly, using heavily doped P-type region 5 and the alternate mode in p type island region domain 6 is lightly doped in anode in structure of the invention, reduce sun
The hole injection efficiency of pole, and N-type semiconductor and the electronic barrier being lightly doped between P-type semiconductor compared to heavily doped P-type
It is lower between semiconductor, so electronics almost all is introduced into from N-type intrinsic region is lightly doped P-type semiconductor as shown in figure 4, i.e. electric
Son is easier to pass through before P-type semiconductor is lightly doped, it is not easy to it accumulates, so that at the N-type intrinsic region close to anode, by electricity
The hole concentration for leading mudulation effect generation reduces, i.e. anode hole injection efficiency further decreases.Secondly as schottky metal
101 and 102 and be lightly doped P-type semiconductor 6 contact when, can be lightly doped at 6 interface of P-type semiconductor, formed it is one layer very thin
Acceptor's negative electrical charge space charge layer 13, generates the low-resistance region of electronics, which can also reduce the potential barrier of electronics, allows entrance
The electronics that p type island region domain is lightly doped more easily flows out side wall anode Schottky metal, further decreases the hole injection of anode
Efficiency.Further, structure of the invention cathode is using the lightly doped n type region 3 and interrupted heavily doped n-type region 2 being lightly doped, drop
The low injection efficiency of cathode electronics, and the hole barrier between N-type intrinsic region 4 and lightly doped n type semiconductor 3 compared to height
It is lower between doped N-type semiconductor 2, so hole almost all is introduced into lightly doped n type semiconductor 3 as schemed from N-type intrinsic region 4
Shown in 5, i.e., hole is easier to pass through before lightly doped n type semiconductor, it is not easy to accumulate, so that in the N-type sheet close to cathode
It levies at area, is reduced by the electron concentration that conductivity modulation effect generates, i.e., cathode electronics injection efficiency reduces.Further, due to
When schottky metal 8 and N-type semiconductor 3 contact, one layer very thin of alms giver's positive charge can be formed at 3 interface of N-type semiconductor
Space charge layer 12 generates the low-resistance region in hole, which can also reduce the potential barrier in hole, allows into lightly doped n type
Cathode schottky metal is more easily flowed out in the hole in region, further decreases the electron injection efficiency of cathode.Reversed extensive
During multiple, the hole stream in N-type intrinsic region 4 is stored in anode metal, the electronics being stored in N-type intrinsic region 4 flows to cathode
Metal.Because there is lower potential barrier in heavily doped P-type region 5 for hole compared to low-doped p type island region domain 6, it is stored in N
Hole in type intrinsic region 4, almost all flow into the p type island region domain 5 of heavy doping, then flow out anode metal.And what the present invention used
Groove type anode construction reduces the extraction path in hole, so as to effectively shorten time of Reverse recovery.The forward conduction phase
Between, more traditional PiN structure, in N-type intrinsic region with hanging chain carrier concentration profile for, structure of the invention tool
There is the carrier concentration profile linear and gentle to cathode from anode.Forward conduction voltage drop VFSize depend on N-type intrinsic region
The height of middle carrier concentration, although traditional PiN is higher than structure of the invention in the concentration of anode-side, in intrinsic region middle part
Point, structure of the invention is higher than tradition PiN, therefore structure of the invention also has lower VF。
At Reverse recovery initial stage, the minority carrier (hole) in N-type intrinsic region is stored in first from the region close to anode
Anode metal electrodes are swept out, the current definition for flowing through PiN diode is i, is swept out anode from N-type intrinsic region in the unit time
The hole charge sum of metal electrode is defined as Q1, then the speed of anode extraction hole charge is defined as dQ in the unit time1/ dt,
dQ1/ dt is bigger, can cause biggish reversed [di/dt], to generate greatly in the concatenated parasitic inductance of diode branch
Induced voltage peak value, excessively high induced voltage will lead to the failure risk of device.Structure proposed by the invention is used in anode
P type island region domain and heavily doped P-type region, which is lightly doped, to be alternately distributed, and anode uses lightly doped n type region and intermittent heavily doped N-type
Region reduces the emission effciency in device hole and electronics, is injected into N-type in forward conduction using the low emission effciency of bilateral
The carrier of intrinsic region is linearly gently distributed, so the dQ changed greatly will not be generated by extracting each stage in Reverse recovery1/
Dt, so that excessively high induced voltage will not be caused, it is different due to extracting charge velocity during Reverse recovery can be significantly inhibited
Caused oscillation problem is caused, significantly the reliability of lifting system.
In order to verify advantages of the present invention, the present invention passes through the 5th generation advanced semiconductor device simulation software
SentaurusTCAD has carried out contrast simulation to structure, as can be seen from figures 6 to 8.Fig. 6 is tradition PiN diode and structure of the invention
Along the N-type intrinsic region Carrier Profile comparison diagram of transversal x=AA ' when forward conduction, structure of the invention device is just as seen from the figure
To carrier when conducting in the linear distribution from anode to cathode.Fig. 7 is tradition PiN diode and structure of the invention reversed extensive
During multiple, reverse current peak IrrmDrop to 50%IrrmAt the time of be defined as t1Moment, the hole concentration edge of N-type intrinsic region
Transversal x=BB ' profiles versus figure, structure of the invention is in reversely restoring process as seen from the figure, in IrrmThe same magnitude that decays is extremely
50%IrrmWhen, the hole concentration in intrinsic region along x=BB ' is lower.Fig. 8 is tradition PiN diode and structure of the invention reversed
Electric current, voltage-contrast figure in recovery process, as seen from the figure tradition PiN Diode oscillation more acutely, and tradition PiN diode
There is very long tail current.
Therefore device of the present invention realizes extremely short reverse recovery time and lower forward conduction voltage VF, and inhibit anti-
Oscillation to circuit during recovery enhances the robustness of device, so that it is widely answered in motor driven systems
With.
Claims (8)
1. a kind of groove type anode fast recovery diode with the control of the two poles of the earth Schottky, comprising: cathodic metal (1), in cathode
There are N-type intrinsic region (4) above metal (1), there are anode metal (7) above N-type intrinsic region (4), which is characterized in that in yin
Pole metal (1) be equipped with lightly doped n type region (3) and heavily doped n-type region (2), the lightly doped n type region (3) with it is described
Heavily doped n-type region (2) is spaced apart from each other setting, and the bottom and cathodic metal (1) of lightly doped n type region (3) are Schottky contacts
(8), also, the lightly doped n type region (3) extends to N-type intrinsic region (4) and mixes the heavily doped n-type region (2) gently
The extension of miscellaneous n-type region (3) is covered, and the N-type intrinsic region (4) is located at the upper of lightly doped n type region (3) extension
On surface；It is equipped with heavily doped P-type region (5) between N-type intrinsic region (4) and anode metal (7) and is lightly doped p type island region domain (6),
The heavily doped P-type region (5) and the p type island region domain (6) that is lightly doped are spaced apart from each other setting, the heavily doped P-type region (5)
Longitudinal diffusion depth ratio is lightly doped that p type island region domain (6) is deeper, and the anode metal (7) is located at heavily doped P-type region (5) and gently mixes
On the upper surface of miscellaneous p type island region domain (6), also, upper surface and anode metal (7) that p type island region domain (6) is lightly doped are Schottky contacts
(101)。
2. the groove type anode fast recovery diode according to claim 1 with the control of the two poles of the earth Schottky, feature exist
In, heavily doped P-type region (5) lower than be lightly doped p type island region domain (6) and by heavily doped P-type region (5) with it is adjacent thereto two light
The side in doped p-type region (6) encloses the sagging groove constituted towards N-type intrinsic region (4), and the anode metal (7) is to described
The groove that sink is interior to extend and is full of the groove that sink, the anode metal (7) sinking in groove and the side that p type island region domain (6) are lightly doped
For Schottky contacts (102).
3. a kind of groove type anode fast recovery diode with the control of the two poles of the earth Schottky according to claim 1, special
Sign is, the upper surface in the heavily doped P-type region (5) of recess will in the longitudinal diffusion depth that p type island region domain (6) is lightly doped,
And after spreading, the impurity concentration of heavily doped P-type region (5) bottom is higher than the impurity concentration of lightly doped region (6) bottom at least
0.5 order of magnitude.
4. a kind of groove type anode fast recovery diode with the control of the two poles of the earth Schottky according to claim 1 to 2,
It is characterized in that, p type island region domain (6) and anode metal (7) interface is lightly doped using p-type Schottky contacts (101) in the anode
(102), Ni metal can be used.The heavily doped P-type region (5) of anode recess is connect with anode metal (7) interface using ohm
It touches (11), Al can be used.
5. a kind of groove type anode fast recovery diode with the control of the two poles of the earth Schottky according to claim 1, special
Sign is that the cathode lightly doped n type region (3) and cathodic metal (1) interface use N-type Schottky contacts (8), can adopt
With Mg metal.Cathode heavily doped n-type region (2) and cathodic metal (1) interface use Ohmic contact (9), and Al can be used.
6. the groove type anode fast recovery diode according to claim 1 with the control of the two poles of the earth Schottky, feature exist
In weight doped in concentrations profiled p type island region domain (5) width WPFor (3 μm~12 μm), the sagging depth t of anode metal (7)raIt is 2 μm~8 μm,
Width W between two neighboring heavily doped n-type regionNIt is 4 μm~10 μm.
7. a kind of groove type anode fast recovery diode as claimed in any one of claims 1 to 6 with the control of the two poles of the earth Schottky
Manufacturing method, which is characterized in that the method includes the following steps:
1) manufacture cathode lightly doped n type region (3): on the basis of N-type intrinsic region (4), n-type doping impurity is injected at the back side
After phosphorus, is pushed away trap and forms lightly doped n type region (3),
2) the interrupted heavily doped n-type region of cathode (2) are manufactured: after lightly doped n type region (3) are formed, through gluing, exposure, shown
After shadow, etching photoresist, forms heavily doped N-type and injects window, carry out N-type heavy doping, and remove photoresist,
3) p type island region domain (6) are lightly doped in manufacture anode: on the basis of N-type intrinsic region (4), the p-type of front injection low concentration
After boron doping, is pushed away trap formation and p type island region domain (6) is lightly doped,
4) manufacture anode heavily doped P-type region (5): the first spacing that etches away on p type island region domain (6) are lightly doped is equal, width WP、
Depth is traSilicon, then through gluing, exposure, development, etching photoresist after, finally carry out p-type boron doping after form p type island region
Domain (5), and remove photoresist,
5) anode Schottky area is formed: with Ni and Pt sputtering or evaporate front side of silicon wafer formed transition metal films, through alloy with
Schottky contacts (101) and (102) are formed after removing, etch away the region for not needing Schottky contacts,
6) cathode schottky region is formed: with Al and Mg sputtering or evaporate silicon wafer reverse side formed transition metal films, through alloy with
Schottky contacts (8) are formed after removing, etch away the region for not needing Schottky contacts,
7) cathode metallization: making back metal Al layers in silicon chip back side with evaporation or sputtering method, form metal cathode layer,
8) it anode metallization: again in front side of silicon wafer sputtering or evaporation or plating metal Al film, forms ohm through photoetching, alloy and connects
The groove type anode fast recovery diode of the two poles of the earth Schottky control is made in touching.
8. manufacturing method as claimed in claim 7, which is characterized in that the step 5) and 6) in, can by selection have
The metal of different work functions controls the height of the injection efficiency of anode and cathode carrier.
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| CN115172445A (en) * | 2022-09-02 | 2022-10-11 | 深圳芯能半导体技术有限公司 | Structure and manufacturing method of fast recovery power device and electronic equipment |
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