CN109166815A - 一种用于cmp制程的清洗装置及其清洗方法 - Google Patents
一种用于cmp制程的清洗装置及其清洗方法 Download PDFInfo
- Publication number
- CN109166815A CN109166815A CN201811086754.8A CN201811086754A CN109166815A CN 109166815 A CN109166815 A CN 109166815A CN 201811086754 A CN201811086754 A CN 201811086754A CN 109166815 A CN109166815 A CN 109166815A
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- ultrapure water
- cleaning
- wafer
- rinsing
- processing procedure
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Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000012545 processing Methods 0.000 title claims abstract description 40
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 142
- 239000012498 ultrapure water Substances 0.000 claims abstract description 142
- 239000000126 substance Substances 0.000 claims abstract description 33
- 238000001035 drying Methods 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 33
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 7
- 239000001569 carbon dioxide Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 238000000108 ultra-filtration Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000004134 energy conservation Methods 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 12
- 239000010949 copper Substances 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811086754.8A CN109166815A (zh) | 2018-09-18 | 2018-09-18 | 一种用于cmp制程的清洗装置及其清洗方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811086754.8A CN109166815A (zh) | 2018-09-18 | 2018-09-18 | 一种用于cmp制程的清洗装置及其清洗方法 |
Publications (1)
Publication Number | Publication Date |
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CN109166815A true CN109166815A (zh) | 2019-01-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201811086754.8A Pending CN109166815A (zh) | 2018-09-18 | 2018-09-18 | 一种用于cmp制程的清洗装置及其清洗方法 |
Country Status (1)
Country | Link |
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CN (1) | CN109166815A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111863592A (zh) * | 2019-04-29 | 2020-10-30 | 中芯国际集成电路制造(上海)有限公司 | 研磨后清洗方法以及半导体结构的形成方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06168927A (ja) * | 1992-11-30 | 1994-06-14 | Mitsubishi Electric Corp | ウェハーの静電破壊防止方法およびその装置 |
JP2000114222A (ja) * | 1998-10-01 | 2000-04-21 | Hitachi Plant Eng & Constr Co Ltd | 静電気防止方法及び装置 |
JP2000354729A (ja) * | 1999-04-12 | 2000-12-26 | Japan Organo Co Ltd | 洗浄用機能水製造方法及び製造装置 |
JP2002009033A (ja) * | 2000-06-19 | 2002-01-11 | Super Silicon Kenkyusho:Kk | 半導体ウエハ用洗浄装置 |
JP2005353947A (ja) * | 2004-06-14 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
CN101226874A (zh) * | 2006-12-27 | 2008-07-23 | 硅电子股份公司 | 用于电子材料的清洗液和清洗方法 |
CN102446755A (zh) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | 一种降低化学机械抛光后微粒缺陷的方法 |
CN102962226A (zh) * | 2012-12-06 | 2013-03-13 | 江苏吉星新材料有限公司 | 蓝宝石衬底晶片抛光后的清洗方法 |
CN107993920A (zh) * | 2017-11-24 | 2018-05-04 | 长江存储科技有限责任公司 | 一种多晶硅化学机械研磨后的清洗方法 |
CN108212921A (zh) * | 2018-01-29 | 2018-06-29 | 枣庄维信诺电子科技有限公司 | 清洗装置 |
-
2018
- 2018-09-18 CN CN201811086754.8A patent/CN109166815A/zh active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06168927A (ja) * | 1992-11-30 | 1994-06-14 | Mitsubishi Electric Corp | ウェハーの静電破壊防止方法およびその装置 |
JP2000114222A (ja) * | 1998-10-01 | 2000-04-21 | Hitachi Plant Eng & Constr Co Ltd | 静電気防止方法及び装置 |
JP2000354729A (ja) * | 1999-04-12 | 2000-12-26 | Japan Organo Co Ltd | 洗浄用機能水製造方法及び製造装置 |
JP2002009033A (ja) * | 2000-06-19 | 2002-01-11 | Super Silicon Kenkyusho:Kk | 半導体ウエハ用洗浄装置 |
JP2005353947A (ja) * | 2004-06-14 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
CN101226874A (zh) * | 2006-12-27 | 2008-07-23 | 硅电子股份公司 | 用于电子材料的清洗液和清洗方法 |
CN102446755A (zh) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | 一种降低化学机械抛光后微粒缺陷的方法 |
CN102962226A (zh) * | 2012-12-06 | 2013-03-13 | 江苏吉星新材料有限公司 | 蓝宝石衬底晶片抛光后的清洗方法 |
CN107993920A (zh) * | 2017-11-24 | 2018-05-04 | 长江存储科技有限责任公司 | 一种多晶硅化学机械研磨后的清洗方法 |
CN108212921A (zh) * | 2018-01-29 | 2018-06-29 | 枣庄维信诺电子科技有限公司 | 清洗装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111863592A (zh) * | 2019-04-29 | 2020-10-30 | 中芯国际集成电路制造(上海)有限公司 | 研磨后清洗方法以及半导体结构的形成方法 |
CN111863592B (zh) * | 2019-04-29 | 2023-11-10 | 中芯国际集成电路制造(上海)有限公司 | 研磨后清洗方法以及半导体结构的形成方法 |
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PB01 | Publication | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20191225 Address after: 604-1, floor 6, building 1, No.22, Ronghua Middle Road, Beijing Economic and Technological Development Zone, Daxing District, Beijing 102199 Applicant after: Beijing xinzhilu enterprise management center (L.P.) Address before: 361006 Fujian city of Xiamen province Xiamen area free trade zone (FTZ) Xiangyu Road No. 97 Xiamen international shipping center D 8 storey building 03 unit A nine Applicant before: FUJIAN MINXIN TECHNOLOGY Co.,Ltd. |
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WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190108 |