CN109155242B - Gas distribution showerhead for semiconductor processing - Google Patents
Gas distribution showerhead for semiconductor processing Download PDFInfo
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- CN109155242B CN109155242B CN201780031024.5A CN201780031024A CN109155242B CN 109155242 B CN109155242 B CN 109155242B CN 201780031024 A CN201780031024 A CN 201780031024A CN 109155242 B CN109155242 B CN 109155242B
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- gas holes
- holes
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- 238000009826 distribution Methods 0.000 title claims abstract description 208
- 239000004065 semiconductor Substances 0.000 title abstract description 10
- 230000009977 dual effect Effects 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims description 49
- 238000005192 partition Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 27
- 239000007921 spray Substances 0.000 claims description 9
- 229910000755 6061-T6 aluminium alloy Inorganic materials 0.000 claims description 5
- 229920006169 Perfluoroelastomer Polymers 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 abstract description 364
- 238000000034 method Methods 0.000 abstract description 20
- 239000002243 precursor Substances 0.000 abstract description 8
- 238000009827 uniform distribution Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 description 20
- 238000002955 isolation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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Abstract
Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of process gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a zone divider, and a dual zone showerhead. The gas distribution assembly provides independent center-to-edge flow banding, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.
Description
Technical Field
Embodiments of the present disclosure generally relate to systems and apparatus for processing semiconductor substrates. More specifically, embodiments of the present disclosure relate to a gas distribution assembly having a dual zone showerhead for improved deposition uniformity over a large area substrate.
Background
A gas distribution showerhead is disposed in a semiconductor processing chamber and typically overlies a workpiece or substrate. As the demand for electronic devices such as flat panel displays and integrated circuits continues to increase, the size of substrates and chambers for processing substrates will also continue to increase. Displays and integrated circuits are typically manufactured by a series of processes in which layers are deposited on a substrate and the deposited material is etched into a desired pattern. These processes typically include Chemical Vapor Deposition (CVD).
In addition, as the substrate size continues to increase, uniformity of films deposited on the substrate becomes increasingly difficult. Accordingly, there is a need in the art for a processing chamber that can improve substrate process uniformity. In particular, there is a need for an improved gas distribution assembly that provides improved uniform distribution of process gases in a semiconductor processing chamber.
Disclosure of Invention
Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of process gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a zone divider, and a dual zone showerhead. The gas distribution assembly provides independent center-to-edge flow banding, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.
In one embodiment, a gas distribution assembly is disclosed. The gas distribution assembly includes: a gas distribution plate; a partition plate coupled to the gas distribution plate; and a dual zone showerhead coupled to the zone divider. The gas distribution plate includes: at least one gas supply inlet; a plurality of channels forming a path splitting manifold operatively connected to the gas supply inlet; and a first plurality of gas holes disposed within the plurality of passages and passing through the gas distribution plate. The partition plate includes: an inner zone comprising a second plurality of gas holes; an outer zone comprising a third plurality of gas holes; and a first barrier wall separating the inner region from the outer region. The dual zone showerhead includes: an inner zone comprising a fourth plurality of gas holes; an outer zone comprising a fifth plurality of gas holes; and a groove disposed between the inner region and the outer region. The trench is configured to receive the first barrier wall such that an inner region of the dual region showerhead is physically separated from an outer region of the dual region showerhead. Further, the second and fourth plurality of gas holes are patterned to avoid coaxial flow, and the third and fifth plurality of gas holes are patterned to avoid coaxial flow.
In another embodiment, a gas distribution assembly is disclosed. The gas distribution assembly includes: a gas distribution plate; a partition plate coupled to the gas distribution plate; a dual zone showerhead coupled to the zone divider; and a mixing manifold operatively coupled to the gas distribution plate. The gas distribution plate includes: at least one gas supply inlet; a plurality of channels forming a path splitting manifold operatively connected to the gas supply inlet; and a first plurality of gas holes disposed within the plurality of passages and passing through the gas distribution plate. The partition plate includes: an inner zone comprising a second plurality of gas holes; an outer zone comprising a third plurality of gas holes; and a first barrier wall separating the inner region from the outer region. The dual zone showerhead includes: an inner zone comprising a fourth plurality of gas holes; an outer zone comprising a fifth plurality of gas holes; and a groove disposed between the inner region and the outer region. The trench is configured to receive the first barrier wall such that an inner region of the dual region showerhead is physically separated from an outer region of the dual region showerhead. The mixing manifold includes a plurality of mixing channels. The mixing channels each include a first portion and a second portion. The diameter of the choke passage disposed between the first portion and the second portion is smaller than any diameter of the first portion or the second portion.
In another embodiment, a gas distribution assembly is disclosed. The gas distribution assembly includes: a mixing manifold coupled to the gas distribution plate; a partition plate coupled to the gas distribution plate; and a dual zone showerhead coupled to the zone divider. The mixing manifold includes a plurality of mixing channels. The mixing channel comprises a first portion and a second portion, wherein a diameter of a choke channel disposed between the first portion and the second portion is smaller than any diameter of the first portion or the second portion. The gas distribution plate includes: at least one gas supply inlet; a plurality of channels forming a path splitting manifold operatively connected to the gas supply inlet; and a first plurality of gas holes disposed within the plurality of passages and passing through the gas distribution plate. The partition plate includes: an inner zone comprising a second plurality of gas holes; an outer zone comprising a third plurality of gas holes; and a first barrier wall separating the inner region from the outer region. The dual zone showerhead includes: an inner zone comprising a fourth plurality of gas holes; an outer zone comprising a fifth plurality of gas holes; and a groove disposed between the inner region and the outer region. The trench is configured to receive the first barrier wall such that an inner region of the dual region showerhead is physically separated from an outer region of the dual region showerhead. The second plurality of gas holes and the fourth plurality of gas holes are patterned to avoid coaxial flow, and wherein the third plurality of gas holes and the fifth plurality of gas holes are patterned to avoid coaxial flow.
In another embodiment, a process chamber is disclosed. The processing chamber includes: a chamber body at least partially defining a processing volume within the chamber body; a substrate support disposed in the processing volume and coupled with the chamber body; an inlet adapter; and a gas distribution assembly. The gas distribution assembly includes: a mixing manifold defining a plurality of mixing channels; a partition plate; and the double-zone spray head is coupled with the zone partition plate. The partition plate includes: an inner zone defining a first plurality of gas holes; an outer region defining a second plurality of gas holes; and a first barrier wall separating the inner region from the outer region. The dual zone showerhead includes: an inner zone defining a third plurality of gas holes; an outer region defining a fourth plurality of gas holes; and a groove disposed between the inner region and the outer region. The trench is configured to receive the first barrier wall such that an inner region of the dual region showerhead is physically separated from an outer region of the dual region showerhead. The first and third pluralities of gas holes are patterned to avoid coaxial flow, and the second and fourth pluralities of gas holes are patterned to avoid coaxial flow.
In another embodiment, a process chamber is disclosed. The processing chamber includes: a chamber body defining a processing volume within the chamber body; a gas distribution plate; a partition plate coupled to the gas distribution plate; a dual zone showerhead coupled to the zone divider; and a mixing manifold operatively coupled to the gas distribution plate. The gas distribution plate includes: at least one gas supply inlet; and a first plurality of gas holes defined through the gas distribution plate. The partition plate includes: an inner zone comprising a second plurality of gas holes; an outer zone comprising a third plurality of gas holes; and a first barrier wall separating the inner region from the outer region. The dual zone showerhead includes: an inner zone comprising a fourth plurality of gas holes; an outer zone comprising a fifth plurality of gas holes; and a groove disposed between the inner region and the outer region. The trench is configured to receive the first barrier wall such that an inner region of the dual region showerhead is physically separated from an outer region of the dual region showerhead. The mixing manifold includes a plurality of mixing channels. The mixing channel comprises a first portion and a second portion, wherein a diameter of a choke channel disposed between the first portion and the second portion is smaller than any diameter of the first portion or the second portion.
In another embodiment, a process chamber is disclosed. The processing chamber includes: a chamber body defining a processing volume within the chamber body; a substrate support disposed in the processing volume and coupled to the chamber body; a gas supply coupled to the chamber body; a gas distribution assembly disposed in the chamber body; and a mixing manifold operatively coupled to the gas distribution plate. The gas distribution assembly includes: a gas distribution plate; a partition plate coupled to the gas distribution plate; and a dual zone showerhead coupled to the zone divider. The gas distribution plate includes: at least one gas supply inlet; and a first plurality of gas holes disposed through the gas distribution plate. The partition plate includes: an inner zone comprising a second plurality of gas holes; an outer zone comprising a third plurality of gas holes; and a first barrier wall separating the inner region from the outer region. The dual zone showerhead includes: an inner zone comprising a fourth plurality of gas holes; an outer zone comprising a fifth plurality of gas holes; and a groove disposed between the inner region and the outer region. The trench is configured to receive the first barrier wall such that an inner region of the dual region showerhead is physically separated from an outer region of the dual region showerhead. The mixing manifold includes a plurality of mixing channels including a first portion and a second portion, wherein a diameter of a choke channel disposed between the first portion and the second portion is less than any diameter of the first portion or the second portion.
Drawings
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
Fig. 1 is a schematic cross-sectional view of a processing chamber according to one embodiment disclosed herein.
FIG. 2A is a schematic perspective view of the top of a gas distribution plate according to one embodiment disclosed herein.
FIG. 2B is a schematic perspective view of the bottom of the gas distribution plate of FIG. 2A according to one embodiment disclosed herein.
FIG. 3 is a schematic perspective view of the top of a divider plate according to one embodiment disclosed herein.
FIG. 4 is a schematic perspective view of the top of a spray head according to one embodiment disclosed herein.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.
Detailed Description
Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of process gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a zone divider, and a dual zone showerhead. The gas distribution assembly provides independent center-to-edge flow banding, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.
Fig. 1 is a cross-sectional view of a processing system 100. The processing system 100 includes a gas source 102 and a processing chamber 104. The process chamber 104 has a process volume 105 defined therein. In some embodiments, the processing volume is defined by a spacer 122 surrounding a substrate support 124, the substrate support 124 for holding a substrate thereon. The substrate may be disposed on the substrate support 124 across a processing region 128 from a gas distribution showerhead 130. The substrate may enter and exit the process chamber 104 through a slit valve opening 132 disposed through the process chamber 104. In some embodiments, the substrate support 124 is coupled to a pedestal heater 126, the pedestal heater 126 being configured to provide heat to the substrate support.
The general direction of gas and/or product flow is downward in the orientation of fig. 1, and this direction may be referred to herein as "downstream", while the opposite direction upward in the orientation of fig. 1 may be referred to as "upstream". Moreover, a significant portion of the apparatus shown in fig. 1 may be cylindrically symmetric about the central axis 106, with the associated directions defined as a radial direction 108 and an azimuthal direction 110. This directional convention may be used herein, although one skilled in the art will appreciate that many of the principles described herein are not limited to cylindrically symmetric systems.
As shown in fig. 1, the process chamber 104 generally includes an inlet adapter 112 disposed downstream of at least one flow ratio controller 114 coupled to the process chamber 104. In some embodiments, the processing system 100 may include a plurality of flow ratio controllers 114. As shown in fig. 1, two four-way flow ratio controllers 114 are coupled to the process chamber 104. The flow ratio controller 114 may be disposed outside and/or inside the processing region 128. Each flow ratio controller 114 may provide independent chamber matching. Gas may enter the inlet adapter 112 from the flow ratio controller 114 on a first side 116A of the inlet adapter 112 such that gas is provided to a first section of the gas distribution assembly. Further, gas may enter the inlet adapter 112 from the flow ratio controller 114 on the second side 116B of the inlet adapter such that gas is also provided to the second section of the gas distribution assembly. The gas entering the flow ratio controller 114 may be HF and/or NH 3 。
The inlet adapter 112 may be coupled to the mixing plate 118. Mixing plate 118 may be disposed downstream of inlet adapter 112. The mixing plate 118 may be coupled to a gas distribution assembly 134. The gas distribution assembly 134 may be disposed downstream of the mixing plate 118. In some embodiments, the gas distribution assembly 134 may include a mixing manifold 120, gas distribution showerhead 130, gas distribution plate 136, and/or zoned plate 138, among others. A zonal isolation plate 138 is coupled to the spacer 122 to further define the processing region 128.
The mixing manifold 120 is operably coupled to the mixing plate 118 at a first end and to the gas distribution plate 136 at a second end. The mixing manifold 120 includes a plurality of mixing channels 140. As shown in fig. 1, two mixing channels are shown. Each mixing channel 140 includes a first portion 142 and a second portion 144 separated by a choke channel 146. A choke passage 146 is provided between the first portion 142 and the second portion 144. The diameter of the choke passage 146 is smaller than the diameter of the first portion 142 and/or the second portion 144. The difference in diameters of the choke passage 146 and the first portion 142 or the second portion 144 may allow for a variable flow rate of the gas.
The gas distribution assembly 134 also includes a gas distribution plate 136. A gas distribution plate 136 is coupled to the mixing manifold 120 and, in some embodiments, is disposed downstream of the mixing manifold 120. In some embodiments, the gas distribution plate 136 comprises an aluminum material, such as 6061-T6 aluminum material. In some embodiments, the gas distribution plate 136 may comprise a ceramic material, a dielectric material, a quartz material, or a stainless steel material.
The gas distribution assembly also includes a zoned baffle 138. The blocker plate 138 is coupled to the gas distribution plate 136 and, in some embodiments, is disposed downstream of the gas distribution plate 136. In some embodiments, the zoned separator 138 comprises an aluminum material, for example, 6061-T6 aluminum material. In some embodiments, the zonal isolation 138 may comprise a ceramic material, a dielectric material, a quartz material, or a stainless steel material.
The gas distribution assembly also includes a gas distribution showerhead 130. The gas distribution showerhead 130 is coupled to the divider plate 138 and, in some embodiments, is disposed downstream of the divider plate 138. In certain embodiments, a gas distribution showerhead 130 may be disposed between a zoned baffle 138 and the processing region 128. In some embodiments, the gas distribution showerhead 130 comprises an aluminum material, such as 6061-T6 aluminum material. In some embodiments, the gas distribution showerhead 130 may comprise a ceramic material, a dielectric material, a quartz material, or a stainless steel material.
Fig. 2A and 2B each schematically illustrate a gas distribution plate 136. Fig. 2A shows a top surface 202 of the gas distribution plate 136. As shown, the gas distribution plate 136 includes at least one gas supply inlet 206. Although a first gas supply inlet 206A and a second gas supply inlet 206B are shown, it is contemplated that any number of gas supply inlets 206, such as one gas supply inlet or four gas supply inlets, may be included in the gas distribution plate 136. The first gas supply inlet 206A is operatively connected with the first mixing channel 140 of the mixing manifold 120 at a first location. The first location may be disposed at the central axis 106 or adjacent the central axis 106. The first gas supply inlet 206A is further operatively connected to the partition plate 138. The second gas supply inlet 206B is operatively connected to the second mixing channel 140 of the mixing manifold 120 at a second location. The second location may be disposed adjacent to the first location. A second gas supply inlet 206B is also operatively connected to the partition plate 138. Each gas supply inlet 206 may receive gas via the mixing manifold 120. The first gas supply inlet 206A may distribute gas to the partition plate 138 via the passages 208.
As shown in fig. 2A, the gas distribution plate 136 includes a plurality of gas passages 210. The plurality of gas passages 210 form a path splitting manifold in the gas distribution plate 136. The plurality of gas channels 210 are coupled to at least one gas supply inlet. As shown in fig. 2A, a plurality of gas channels 210 are operatively connected at a first end to the second gas supply inlet 206B. At a second end of the plurality of gas channels 210, the plurality of gas channels 210 are operatively connected to a first plurality of gas holes 212. A first plurality of gas holes 212 are disposed within the plurality of gas passages 210 and extend through the gas distribution plate 136 at a second end.
A plurality of gas passages 210 are disposed radially outward from the center of the gas distribution plate 136. Further, a plurality of gas channels 210 are distributed around the first gas supply inlet 206A and/or the second gas supply inlet 206B. As shown in fig. 2A, the plurality of gas passages 210 are symmetrically distributed about the first gas supply inlet 206A and/or the second gas supply inlet 206B, however, it is contemplated that the plurality of gas passages may also be asymmetrically distributed about the first gas supply inlet 206A and/or the second gas supply inlet 206B. As shown in the embodiment of the gas distribution plate 136 shown in fig. 2A, the first gas supply inlet 206A may supply gas through an inner region of the gas distribution plate and the second gas supply inlet 206B may supply gas through an outer region of the gas distribution plate. The plurality of gas passages 210 are arranged in a plurality of tees 214, wherein the gas flow is split approximately equally into opposite circumferential directions at each tee 214. The individual tees 214 are connected in series such that the gas flow is divided between successively shorter arcuate channels 210A, 210B, 210C in order starting from the long channel 210A and ending with the short channel 210C. The short channel 210C terminates at a tip where at least one of the first plurality of gas holes 212 is located. Each tee 214 is symmetrical about the gas distribution plate 136 such that the distance that gas travels through each gas channel 210 is the same. This feature helps to provide a uniform gas pressure in all of the first plurality of gas holes 212. Furthermore, each tee 214 equally distributes the flow rate of gas at that joint. The plurality of gas channels 210 provide a recursive gas flow. The plurality of gas passages 210 may be fabricated via electron beam welding. As shown in fig. 2A, the first plurality of gas holes 212 may include eight equally distributed gas holes 212 that provide gas outlets to the partition plate 138. However, it is contemplated that the first plurality of gas holes 212 may include any number of gas holes.
Fig. 2B shows the bottom surface 204 of the gas distribution plate 136. As shown, the gas exits a first plurality of gas holes 212 that extend through the bottom surface 204 of the gas distribution plate 136. The first plurality of gas holes 212 are equally spaced around the outer portion of the gas distribution plate. Upon exiting the first plurality of gas holes 212, gas may flow into the outer region 304 of the partition plate 138, as will be discussed below. In addition, the gas exits a first gas supply inlet 206A that also extends through the bottom surface 204 of the gas distribution plate 136. Upon exiting the first gas supply inlet 206A, gas may flow into the inner zone 302 of the zone divider 138, as will be discussed below.
Fig. 3 shows a top view of the section divider 138. It should be noted that in some embodiments, the corresponding bottom view of the divider 138 may be substantially similar to the top view of the divider 138. A partition plate 138 is disposed between the gas distribution plate 136 and the gas distribution showerhead 130. In some embodiments, a zone divider 138 is coupled to the gas distribution plate 136 and/or the gas distribution showerhead 130.
In some embodiments, and as shown in fig. 3, the zoned barrier 138 is a dual zoned barrier 138. Thus, the compartment divider 138 includes an inner region 302 and an outer region 304. The inner region 302 may be disposed within the outer region 304. In some embodiments, the inner zone 302 may be disposed entirely within the outer zone 304. In other embodiments, the outer region 304 may surround the inner region 302.
The inner zone 302 includes a second plurality of gas holes 306. In some embodiments, the second plurality of gas holes 306 may be straight drilled gas holes. The straight drilled gas holes may each have a longitudinal axis aligned with the longitudinal axis of the divider plate 138 and/or the gas distribution showerhead 130. In other embodiments, the second plurality of gas holes 306 may be drilled at an angle. In other embodiments, the second plurality of gas holes 306 may include straight drilled gas holes and/or a mixture of gas holes drilled at an angle. Accordingly, the gas holes drilled at an angle may have a longitudinal axis that is not aligned with the longitudinal axis of the divider plate 138 and/or the gas distribution showerhead 130. Further, in some embodiments, the second plurality of gas holes 306 may have a diameter between about 0.01 inches and about 0.3 inches, for example, about 0.015 inches. Thus, in some embodiments, the second plurality of gas holes 306 may each have a uniform width. In other embodiments, the second plurality of gas holes 306 may each have a variable width. Further, each of the second plurality of gas holes 306 may be equally spaced apart, however, in some embodiments, each of the second plurality of gas holes 306 may be variably spaced apart.
The outer region 304 includes a third plurality of gas holes 308. In some embodiments, the third plurality of gas holes 308 may be straight drilled gas holes. The straight drilled gas holes may each have a longitudinal axis aligned with the longitudinal axis of the divider plate 138 and/or the gas distribution showerhead 130. In other embodiments, the third plurality of gas holes 308 may be drilled at an angle. In other embodiments, the third plurality of gas holes 308 may include straight drilled gas holes and/or a mixture of gas holes drilled at an angle. Thus, the gas holes drilled at an angle may have a longitudinal axis that is not aligned with the longitudinal axis of the divider plate 138. Further, in some embodiments, the third plurality of gas holes 308 may have a diameter between about 0.01 inches and about 0.3 inches, for example, about 0.015 inches. Thus, in some embodiments, the third plurality of gas holes 308 may each have a uniform width. In other embodiments, the third plurality of gas holes 308 may each have a variable width. Further, each of the third plurality of gas holes 308 may be equally spaced apart, however, in some embodiments, each of the third plurality of gas holes 308 may be variably spaced apart. In general, the divider plate 138 may include between about 600 gas holes and about 2200 gas holes.
The zoned plate 138 may include a plurality of surfaces 312, wherein each surface 312 is layered such that each surface has a different elevation from the zoned plate. In some embodiments, and as shown in fig. 3, the zoned separator may have a first surface 312A, a second surface 312B, and a third surface 312C. The first surface 312A may have the lowest height, and the third surface 312C may have the highest height. The inner zone 302 and the outer zone 304 are disposed in the same surface. As shown, the inner zone 302 and the outer zone 304 are disposed within the first surface 312A. However, it is contemplated that the inner zone 302 and the outer zone 304 may be disposed entirely and/or partially on different surfaces 312.
The first barrier wall 310 is disposed between the inner zone 302 and the outer zone 304 of the zone divider 138. The first barrier wall 310 is coupled to the compartment ceiling 138 and extends outwardly from the first surface 312A of the compartment ceiling 138. The top surface 314 of the first barrier wall 310 may be substantially flush with a higher layered surface of the partition wall, e.g., the second surface 312B or the third surface 312C. In some embodiments, the first barrier wall 310 may extend between about 0.125 inches and about 0.350 inches outwardly from the first surface 312A of the partition wall.
A first inner O-ring 316 (see fig. 1) may be disposed on the first surface of the first barrier wall 310 and/or coupled to the first surface of the first barrier wall 310. Returning to fig. 2B, a trench 216 may be formed in the bottom surface 204 of the gas distribution plate 136. The grooves 216 in the gas distribution plate 136 may be sized to receive and/or receive the first barrier wall 310 and the first inner O-ring 316 of the zone partition plate 138 such that the inner zone 302 and the outer zone 304 of the zone partition plate 138 are sealingly closed and/or coupled to the top surface of the zone partition plate when the zone partition plate 138 is coupled to the gas distribution plate 136. Thus, a first inner O-ring 316 is disposed between the first barrier wall 310 and the gas distribution plate 136. In some embodiments, the first inner O-ring 316 comprises a perfluoroelastomer material, such as a Kalrez material.
The zonal isolation plate 138 may include a groove 318 formed on one surface of the zonal isolation plate 138. The groove 318 may be disposed around the outer region 304 of the zone divider 138 such that the groove 318 surrounds the second surface 312B. The grooves 318 are configured to seal the zone divider 138 to the gas distribution plate 136. The grooves 318 in the blocker plate 138 may be sized to accept and/or receive the first outer O-ring 315 (see fig. 1) such that the blocker plate 138 is sealingly coupled to the gas distribution plate when the blocker plate 138 is coupled to the gas distribution plate 136. Thus, a first outer O-ring 315 is disposed within the groove 318 and between the zone divider 138 and the gas distribution plate 136. In some embodiments, the first outer O-ring 315 comprises a perfluoroelastomer material, such as a Kalrez material.
As mentioned above, the bottom side of the zoned barrier 138 is substantially similar to the top side of the zoned barrier 138 shown in fig. 3. Accordingly, the bottom side (not shown) of the zonal isolation plate 138 also includes an inner zone and an outer zone that are coupled to the inner zone 302 and the outer zone 304, respectively, via a second plurality of gas holes 306 and a third plurality of gas holes 308, respectively. Further, an inner region on the bottom side of the partition plate 138 may be disposed within an outer region of the bottom side of the partition plate. In some embodiments, the inner zone on the bottom side of the zone divider 138 may be disposed entirely within the outer zone on the bottom side of the zone divider 138. In other embodiments, an outer region on the bottom side of the section divider 138 may surround an inner region on the bottom side of the section divider 138.
The bottom side of the partition plate 138 may also include a plurality of surfaces 312, wherein each surface 312 is layered such that each surface has a different rise from the partition plate 138. In addition, the bottom side of the partition wall 138 also includes a second barrier wall (shown in FIG. 1) that is substantially similar to the first barrier wall 310 discussed above. The second barrier rib is disposed between an inner region on the bottom side of the section divider 138 and an outer region on the bottom side of the section divider 138. The second barrier wall is coupled to the zone divider 138 and extends outwardly from the surface of the zone divider 138. The top surface of the second barrier wall may be substantially flush with the higher layered surface of the partition wall, as discussed above with reference to the first barrier wall 310.
The second inner O-ring 316 may be disposed on and/or coupled to the first surface of the second barrier wall. As shown in fig. 4 below, a first trench 416 may be formed in the top surface 404 of the gas distribution showerhead 130. The first groove 416 in the gas distribution showerhead 130 may be sized to receive and/or receive the second barrier wall and the second inner O-ring 316 of the district partition plate 138 such that, upon coupling the gas distribution showerhead 130 with the district partition plate 138, the inner region on the bottom side of the district partition plate 138 and the outer region on the bottom side of the district partition plate 138 are hermetically closed and/or coupled on the bottom surface of the district partition plate. Thus, the second inner O-ring 316 is disposed between the first barrier wall 310 and the gas distribution showerhead 130. In some embodiments, the second inner O-ring 316 comprises a perfluoroelastomer material, such as a Kalrez material.
Fig. 4 shows a top view of the gas distribution showerhead 130. The gas distribution showerhead 130 is disposed between a zoned baffle 138 and the processing region 128. In some embodiments, the gas distribution showerhead 130 is coupled to the divider 138 and/or the divider 122.
In some embodiments, and as shown in FIG. 4, the gas distribution showerhead 130 may be a dual zone showerhead. Thus, the gas distribution showerhead 130 includes an inner region 406 and an outer region 408. The inner region 406 may be disposed within the outer region 408. In some embodiments, the inner region 406 may be disposed entirely within the outer region 408. In other embodiments, the outer region 408 may surround the inner region 406.
As shown, the gas distribution showerhead 130 has an inner region 406 and an outer region 408 on the top surface of the gas distribution showerhead 130. The inner region 406 of the gas distribution showerhead 130 may correspond to and/or be operatively connected with the inner region of the zone divider 138. The inner region 406 of the gas distribution showerhead 130 includes a fourth plurality of gas holes 410 therethrough.
In some embodiments, the fourth plurality of gas holes 410 may be straight drilled gas holes. The straight drilled gas holes may each have a longitudinal axis aligned with the longitudinal axis of the divider plate 138 and/or the gas distribution showerhead 130. In other embodiments, the fourth plurality of gas holes 410 may be drilled at an angle. In other embodiments, the fourth plurality of gas holes 410 may include straight drilled gas holes and/or a mixture of gas holes drilled at an angle. Thus, the gas holes drilled at an angle may have a longitudinal axis that is not aligned with the longitudinal axis of the gas distribution showerhead 130. Further, in some embodiments, the fourth plurality of gas holes 410 may have a diameter between about 0.01 inches and about 0.6 inches, for example, about 0.03 inches. Thus, in some embodiments, the fourth plurality of gas holes 410 may each have a uniform width. In other embodiments, the fourth plurality of gas holes 410 may each have a variable width. Further, each of the fourth plurality of gas holes 410 may be equally spaced apart, however, in some embodiments, each of the fourth plurality of gas holes 410 may be variably spaced apart.
The outer region 408 of the gas distribution showerhead 130 may correspond to and/or be operatively connected with the outer region of the zone divider 138. The outer region of the gas distribution showerhead 130 includes a fifth plurality of gas holes 412 therethrough. In some embodiments, the fifth plurality of gas holes 412 may be straight drilled gas holes. The straight drilled gas holes may each have a longitudinal axis aligned with the longitudinal axis of the divider plate 138 and/or the gas distribution showerhead 130. In other embodiments, the fifth plurality of gas holes 412 may be drilled at an angle. In other embodiments, the fifth plurality of gas holes 412 may include straight drilled gas holes and/or a mixture of gas holes drilled at an angle. Thus, the gas holes drilled at an angle may have a longitudinal axis that is not aligned with the longitudinal axis of the gas distribution showerhead 130. Further, in some embodiments, the fifth plurality of gas holes 412 may have a diameter between about 0.01 inches and about 0.6 inches, for example, about 0.03 inches. As such, in some embodiments, the fifth plurality of gas holes 412 may each have a uniform width. In other embodiments, the fifth plurality of gas holes 412 may each have a variable width. Further, each of the fifth plurality of gas holes 412 may be equally spaced apart, however, in some embodiments, each of the fifth plurality of gas holes 412 may be variably spaced apart. In general, the gas distribution showerhead 130 may include between about 600 gas holes and about 2200 gas holes.
The gas distribution showerhead 130 further includes a first groove 416 disposed within the gas distribution showerhead 130. In some embodiments, the first groove 416 is disposed between the inner region 406 of the gas distribution showerhead 130 and the outer region 408 of the gas distribution showerhead 130. The first trench 416 may surround the inner region 406. The first groove 416 is configured to receive the first barrier wall 310 and the first inner O-ring 316 of the compartment plate, or in some embodiments, the first groove 416 is configured to receive the second barrier wall disposed on the bottom side of the compartment plate 138 and the second inner O-ring 316 also disposed on the bottom side of the compartment plate 138. The first trench 416 is configured to receive the first barrier wall 310 and/or a second barrier wall (not shown) such that the inner region 406 of the gas distribution showerhead 130 is physically separated from the outer region 408 of the gas distribution showerhead 130.
In some embodiments, the gas distribution showerhead 130 may further include a second groove 418 disposed within the gas distribution showerhead 130. The second groove 418 may be disposed about the outer region of the gas distribution showerhead 130 such that the second groove 418 surrounds the outer region 408. The second groove 418 is configured to seal the zonal baffle 138 to the gas distribution showerhead 130. The second groove 418 in the gas distribution showerhead 130 may be sized to accept and/or receive the second outer O-ring 315 (see fig. 1) such that the district partition 138 is sealingly coupled to the gas distribution showerhead 130 when the district partition 138 is coupled to the gas distribution showerhead 130. Thus, a second outer O-ring 315 is disposed within the second groove 418 between the divider plate 138 and the gas distribution showerhead 130. In some embodiments, the second outer O-ring 315 comprises a perfluoroelastomer material, such as a Kalrez material.
In certain embodiments, the gas distribution showerhead 130 may further include a void region 420 disposed between the fifth plurality of gas holes 412 and the second grooves 418. Void region 420 may surround outer region 408 and/or fifth plurality of gas holes 412. Void region 420 may not include gas holes.
Referring now to fig. 1, 2 and 3, when the gas distribution plate 136 is coupled and/or operatively connected to the blocker plate 138, a first plenum 150 is formed/disposed between the gas distribution plate 136 and the outer region 304 of the blocker plate 138. In addition, a second plenum 152 is formed/disposed between the gas distribution plate 136 and the inner region 302 of the partition plate 138. Moreover, when the blocker plate 138 is coupled and/or operatively connected to the gas distribution showerhead 130, the outer region 304 of the blocker plate 138 is aligned with the outer region 408 of the gas distribution showerhead 130 and the inner region 302 of the blocker plate 138 is aligned with the inner region 406 of the gas distribution showerhead 130. In addition, a third plenum 154 is formed/disposed between the outer region 304 of the partition plate 138 and the outer region 408 of the gas distribution showerhead 130. In addition, a fourth plenum 156 is formed/disposed between the inner region 302 of the partition plate 138 and the inner region 406 of the gas distribution showerhead 130. The first barrier wall 310 and/or the second barrier wall may separate the first air chamber 150 from the second air chamber 152 and the third air chamber 154 from the fourth air chamber 156. Each of the first, second, third, and/or fourth gas chambers 150, 152, 154, and/or 156 allows for abrupt expansion of the gas, providing a more uniform flow.
Referring now to fig. 1, 3 and 4, the second plurality of gas holes 306 of the divider plate 138 and the fourth plurality of gas holes 410 of the gas distribution showerhead 130 are patterned such that coaxial flow is avoided when the divider plate 138 is coupled and/or operatively connected to the gas distribution showerhead 130. Thus, the longitudinal axis of each of the second plurality of gas holes 306 of the divider plate 138 is not aligned with the longitudinal axis of any of the fourth plurality of gas holes 410 of the gas distribution showerhead 130. Further, the third plurality of gas holes 308 of the divider plate 138 and the fifth plurality of gas holes 412 of the gas distribution showerhead 130 are patterned such that when the divider plate 138 is coupled and/or operatively connected to the gas distribution showerhead 130, coaxial flow is avoided. Thus, the longitudinal axis of each of the third plurality of gas holes 308 of the divider plate 138 is not aligned with the longitudinal axis of any of the fifth plurality of gas holes 412 of the gas distribution showerhead 130.
Advantages of the present disclosure include independent center-to-edge flow zonal, independent HF/NH 3 Delivering and mixing HF/NH on cover via mixing manifold 3 Recursive distribution in a gas distribution plate. In addition, an improved uniform distribution of the process gas into the semiconductor processing chamber is achieved. Further, embodiments of the present disclosure are retrofittable to existing, existing equipment. In addition, parts made from electroless nickel 6061-T6 aluminum provide improved corrosion resistance.
Additional advantages include the ability to vary and/or modify the flow rate in the process chamber to allow improved uniformity across the substrate. For example, there may be different flow rates between the inner and outer regions of the gas distribution assembly.
In summary, embodiments disclosed herein relate to a gas distribution assembly for providing improved uniform distribution of process gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a zone divider, and a dual zone showerhead. The gas distribution assembly provides independent center-to-edge flow banding, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (20)
1. A gas distribution assembly, comprising:
a gas distribution plate, comprising:
at least one gas supply inlet;
a plurality of channels forming a path splitting manifold operatively connected to the gas supply inlet; and
A first plurality of gas holes disposed within the plurality of passages and through the gas distribution plate;
a mixing manifold operatively coupled to the gas distribution plate and having a top side and a bottom side, the mixing manifold defining a plurality of mixing channels leading from the top side to the bottom side, wherein one of the mixing channels of the plurality of mixing channels comprises:
a choke portion; and
the first portion and the second portion,
wherein the diameter of the choke portion is disposed between the first portion and the second portion, and the diameter is less than any diameter of the first portion or the second portion;
a zonal baffle coupled to the gas distribution plate and disposed downstream of the mixing channel, the zonal baffle comprising:
an inner zone comprising a second plurality of gas holes;
an outer zone comprising a third plurality of gas holes; and
A first barrier wall separating the inner region from the outer region;
a dual zone showerhead coupled to the zone divider, the dual zone showerhead comprising:
an inner zone comprising a fourth plurality of gas holes;
an outer zone comprising a fifth plurality of gas holes; and
A trench disposed between the inner region and the outer region, wherein the trench is configured to receive the first barrier wall such that an inner region of the dual-region showerhead is physically separated from an outer region of the dual-region showerhead; and
Wherein the second plurality of gas holes and the fourth plurality of gas holes are patterned to avoid coaxial flow, and wherein the third plurality of gas holes and the fifth plurality of gas holes are patterned to avoid coaxial flow.
2. The gas distribution assembly of claim 1, wherein an inner region of the dual-zone showerhead is aligned with an inner region of the zone divider.
3. The gas distribution assembly of claim 1, wherein an outer region of the dual zone showerhead is aligned with an outer region of the zone divider.
4. The gas distribution assembly of claim 1, wherein the plurality of channels are symmetrically distributed about the gas supply inlet.
5. The gas distribution assembly of claim 1, further comprising:
a first plenum disposed between the gas distribution plate and an outer region of the partition plate; and
And a second gas chamber disposed between the gas distribution plate and an inner region of the partition plate.
6. The gas distribution assembly of claim 1, further comprising:
the third air chamber is arranged between the double-zone spray head and the outer zone of the zone partition plate; and
And the fourth air chamber is arranged between the double-zone spray head and the inner zone of the zone separation plate.
7. The gas distribution assembly of claim 1, further comprising:
a first O-ring disposed between the first barrier wall and the gas distribution plate; and
And the second O-shaped ring is arranged between the first barrier wall and the double-area spray head.
8. The gas distribution assembly of claim 7, wherein the first O-ring and the second O-ring comprise a perfluoroelastomer material.
9. The gas distribution assembly of claim 1, wherein the gas distribution plate, the zone divider, or the dual zone showerhead comprises an aluminum material, a ceramic material, a dielectric material, a quartz material, or a stainless steel material.
10. The gas distribution assembly of claim 9, wherein the aluminum material is 6061-T6 aluminum material.
11. The gas distribution assembly of claim 1, wherein the first plurality of gas holes is at least eight gas holes.
12. The gas distribution assembly of claim 1, wherein the second plurality of gas holes, the third plurality of gas holes, the fourth plurality of gas holes, and the fifth plurality of gas holes each have a longitudinal axis aligned with a longitudinal axis of the dual zone showerhead.
13. The gas distribution assembly of claim 1, wherein the second plurality of gas holes, the third plurality of gas holes, the fourth plurality of gas holes, and the fifth plurality of gas holes each have a uniform width.
14. The gas distribution assembly of claim 1, wherein the second plurality of gas holes, the third plurality of gas holes, the fourth plurality of gas holes, and the fifth plurality of gas holes each have a longitudinal axis that is not aligned with a longitudinal axis of the dual zone showerhead.
15. The gas distribution assembly of claim 1, wherein the second plurality of gas holes, the third plurality of gas holes, the fourth plurality of gas holes, and the fifth plurality of gas holes each have a variable width.
16. A gas distribution assembly, comprising:
a gas distribution plate, comprising:
at least one gas supply inlet;
a plurality of channels forming a path splitting manifold operatively connected to the gas supply inlet; and
A first plurality of gas holes disposed within the plurality of passages and through the gas distribution plate;
a blocker plate coupled to the gas distribution plate, the blocker plate comprising:
an inner zone comprising a second plurality of gas holes;
an outer zone comprising a third plurality of gas holes; and
A first barrier wall separating the inner region from the outer region;
a dual zone showerhead coupled to the zone divider, the dual zone showerhead comprising:
an inner zone comprising a fourth plurality of gas holes;
an outer zone comprising a fifth plurality of gas holes; and
A trench disposed between the inner region and the outer region, wherein the first barrier wall is disposed within a portion of the trench that is sized to receive the first barrier wall such that a portion of the first barrier wall extends within the trench and an inner region of the dual-region spray is physically separated from an outer region of the dual-region spray; and
A mixing manifold having a top side and a bottom side, the mixing manifold operatively coupled to the gas distribution plate, the mixing manifold comprising:
a plurality of mixing channels leading from the top side to the bottom side, wherein one of the mixing channels of the plurality of mixing channels comprises a choke portion, a first portion, and a second portion, wherein a diameter of the choke portion disposed between the first portion and the second portion is smaller than any diameter of the first portion or the second portion, and wherein the divider is disposed downstream of the mixing channel.
17. The gas distribution assembly of claim 16, wherein the second plurality of gas holes and the fourth plurality of gas holes are patterned to avoid coaxial flow, and wherein the third plurality of gas holes and the fifth plurality of gas holes are patterned to avoid coaxial flow.
18. The gas distribution assembly of claim 16, further comprising:
a first plenum disposed between the gas distribution plate and an outer region of the partition plate; and
and a second gas chamber disposed between the gas distribution plate and an inner region of the partition plate.
19. The gas distribution assembly of claim 16, further comprising:
the third air chamber is arranged between the double-zone spray head and the outer zone of the zone partition plate; and
And the fourth air chamber is arranged between the double-zone spray head and the inner zone of the zone separation plate.
20. A gas distribution assembly, comprising:
a mixing manifold having a top side and a bottom side, the mixing manifold comprising:
a plurality of mixing channels leading from the top side to the bottom side, wherein one of the mixing channels of the plurality of mixing channels comprises a choke portion, a first portion, and a second portion, wherein a diameter of the choke portion disposed between the first portion and the second portion is smaller than any diameter of the first portion or the second portion;
a gas distribution plate coupled to the mixing manifold, the gas distribution plate comprising:
at least one gas supply inlet;
a plurality of channels forming a path splitting manifold operatively connected to the gas supply inlet; and
A first plurality of gas holes disposed within the plurality of passages and through the gas distribution plate;
a zonal baffle coupled to the gas distribution plate and disposed downstream of the mixing channel, the zonal baffle comprising:
an inner zone comprising a second plurality of gas holes;
an outer zone comprising a third plurality of gas holes; and
A first barrier wall separating the inner region from the outer region;
a dual zone showerhead coupled to the zone divider, the dual zone showerhead comprising:
an inner zone comprising a fourth plurality of gas holes;
an outer zone comprising a fifth plurality of gas holes; and
A trench disposed between the inner region and the outer region, wherein the trench is configured to receive the first barrier wall such that the inner region of the dual-region showerhead is physically separated from the outer region of the dual-region showerhead, and
wherein the second plurality of gas holes and the fourth plurality of gas holes are patterned to avoid coaxial flow, and wherein the third plurality of gas holes and the fifth plurality of gas holes are patterned to avoid coaxial flow.
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CN201811492381.4A CN109594061B (en) | 2016-05-20 | 2017-04-20 | Gas distribution showerhead for semiconductor processing |
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US201662339200P | 2016-05-20 | 2016-05-20 | |
US62/339,200 | 2016-05-20 | ||
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JP (2) | JP6751448B2 (en) |
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Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101598332B1 (en) * | 2009-07-15 | 2016-03-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Flow control features of cvd chambers |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
KR102214350B1 (en) * | 2016-05-20 | 2021-02-09 | 어플라이드 머티어리얼스, 인코포레이티드 | Gas distribution showerhead for semiconductor processing |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
KR102493945B1 (en) * | 2017-06-06 | 2023-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Deposition radial and edge profile tenability through independent control of teos flow |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10903054B2 (en) * | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10679870B2 (en) * | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
KR102424808B1 (en) * | 2018-05-24 | 2022-07-22 | 도쿄엘렉트론가부시키가이샤 | Multi-zone gas injection for control of gaseous radicals |
US20190376184A1 (en) * | 2018-06-12 | 2019-12-12 | Lam Research Corporation | Chemical vapor deposition shower head for uniform gas distribution |
JP7119779B2 (en) * | 2018-08-30 | 2022-08-17 | 住友金属鉱山株式会社 | Deposition apparatus and deposition method |
US11186910B2 (en) * | 2018-09-14 | 2021-11-30 | Applied Materials, Inc. | Apparatus for multi-flow precursor dosage |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
CN111101117B (en) * | 2018-10-29 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Gas homogenizing device and semiconductor processing equipment |
CN111223736B (en) * | 2018-11-26 | 2021-12-28 | 江苏鲁汶仪器有限公司 | Air inlet device of plasma processing equipment |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
KR102154476B1 (en) * | 2018-12-20 | 2020-09-10 | 주식회사 테스 | Substrate processing apparatus |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
CN113924386A (en) * | 2019-05-15 | 2022-01-11 | 应用材料公司 | Dynamic multi-zone flow control for a processing system |
US10954595B2 (en) | 2019-07-30 | 2021-03-23 | Applied Materials, Inc. | High power showerhead with recursive gas flow distribution |
CN110684963B (en) * | 2019-10-21 | 2022-05-20 | 江苏菲沃泰纳米科技股份有限公司 | Airflow dispersion device for film coating equipment and application thereof |
US20230091524A1 (en) * | 2020-01-13 | 2023-03-23 | Lam Research Corporation | Multizone gas distribution plate for trench profile optimization |
KR102115772B1 (en) | 2020-01-15 | 2020-05-27 | 김민삼 | Shower head for semiconductor manufacturing apparatus |
CN113293359A (en) * | 2020-02-24 | 2021-08-24 | 江苏鲁汶仪器有限公司 | PECVD gas homogenizing device capable of controlling gas inflow and proportion in a partitioned manner |
CN111599717B (en) * | 2020-05-09 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor reaction chamber and atomic layer plasma etching machine |
TW202212618A (en) * | 2020-09-02 | 2022-04-01 | 美商應用材料股份有限公司 | Showerhead design to control stray deposition |
DE102020123076A1 (en) | 2020-09-03 | 2022-03-03 | Aixtron Se | Gas inlet element of a CVD reactor with two feed points |
CN114164412B (en) * | 2020-09-10 | 2024-03-08 | 鑫天虹(厦门)科技有限公司 | Spray head structure of semiconductor atomic layer deposition device |
KR20230069200A (en) * | 2020-09-17 | 2023-05-18 | 램 리써치 코포레이션 | Hybrid showerhead with separate facing plate for high temperature process |
US11881416B2 (en) * | 2020-12-14 | 2024-01-23 | Applied Materials, Inc. | Gas delivery system for a shared gas delivery architecture |
CN115681653A (en) * | 2021-07-29 | 2023-02-03 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and air inlet device thereof |
US20230124246A1 (en) * | 2021-10-19 | 2023-04-20 | Applied Materials, Inc. | Manifold for equal splitting and common divert architecture |
WO2024076478A1 (en) * | 2022-10-06 | 2024-04-11 | Lam Research Corporation | Showerhead gas inlet mixer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105185729A (en) * | 2006-05-03 | 2015-12-23 | 应用材料公司 | Vacuum Processing Chamber Suitable For Etching High Aspect Ratio Features And Components Of Same |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6454860B2 (en) * | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
KR100332314B1 (en) | 2000-06-24 | 2002-04-12 | 서성기 | Reactor for depositing thin film on wafer |
JP3946641B2 (en) * | 2001-01-22 | 2007-07-18 | 東京エレクトロン株式会社 | Processing equipment |
JP2002252219A (en) * | 2001-02-26 | 2002-09-06 | Tokyo Electron Ltd | Film forming apparatus and film forming method |
US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
JP4454964B2 (en) * | 2003-06-09 | 2010-04-21 | 東京エレクトロン株式会社 | Partial pressure control system and flow rate control system |
JP2006210727A (en) * | 2005-01-28 | 2006-08-10 | Hitachi High-Technologies Corp | Plasma-etching apparatus and method therefor |
JP4943669B2 (en) * | 2005-06-08 | 2012-05-30 | 東京エレクトロン株式会社 | Vacuum device seal structure |
JP4911984B2 (en) * | 2006-02-08 | 2012-04-04 | 東京エレクトロン株式会社 | Gas supply apparatus, substrate processing apparatus, gas supply method, and shower head |
JP5157101B2 (en) | 2006-08-04 | 2013-03-06 | 東京エレクトロン株式会社 | Gas supply apparatus and substrate processing apparatus |
JP5211450B2 (en) * | 2006-08-15 | 2013-06-12 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
US20080078746A1 (en) * | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
US7674394B2 (en) | 2007-02-26 | 2010-03-09 | Applied Materials, Inc. | Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution |
US20080236495A1 (en) * | 2007-03-27 | 2008-10-02 | Structured Materials Inc. | Showerhead for chemical vapor deposition (CVD) apparatus |
JP5034594B2 (en) | 2007-03-27 | 2012-09-26 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, and storage medium |
US20090023294A1 (en) * | 2007-07-16 | 2009-01-22 | Applied Materials, Inc. | Method for etching using advanced patterning film in capacitive coupling high frequency plasma dielectric etch chamber |
JP5444599B2 (en) * | 2007-09-28 | 2014-03-19 | 東京エレクトロン株式会社 | Gas supply apparatus and film forming apparatus |
US8512509B2 (en) * | 2007-12-19 | 2013-08-20 | Applied Materials, Inc. | Plasma reactor gas distribution plate with radially distributed path splitting manifold |
US20090159213A1 (en) | 2007-12-19 | 2009-06-25 | Applied Materials, Inc. | Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead |
JP2009194125A (en) | 2008-02-14 | 2009-08-27 | Seiko Epson Corp | Manufacturing equipment for semiconductor device |
US7699935B2 (en) * | 2008-06-19 | 2010-04-20 | Applied Materials, Inc. | Method and system for supplying a cleaning gas into a process chamber |
JP2012503342A (en) * | 2008-09-22 | 2012-02-02 | アプライド マテリアルズ インコーポレイテッド | Etching reactor suitable for high aspect ratio etching |
WO2010065473A2 (en) | 2008-12-01 | 2010-06-10 | Applied Materials, Inc. | Gas distribution blocker apparatus |
KR101063752B1 (en) | 2009-06-08 | 2011-09-08 | 주식회사 에스엠아이 | Shower head of chemical vapor deposition apparatus |
US8465587B2 (en) * | 2009-12-30 | 2013-06-18 | Cbl Technologies, Inc. | Modern hydride vapor-phase epitaxy system and methods |
WO2012138866A1 (en) * | 2011-04-08 | 2012-10-11 | Applied Materials, Inc. | Apparatus and method for uv treatment, chemical treatment, and deposition |
US8955547B2 (en) * | 2011-10-19 | 2015-02-17 | Applied Materials, Inc. | Apparatus and method for providing uniform flow of gas |
US9373517B2 (en) * | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
JP6123208B2 (en) | 2012-09-28 | 2017-05-10 | 東京エレクトロン株式会社 | Deposition equipment |
US10256079B2 (en) * | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US20140271097A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
KR20150055822A (en) | 2013-11-14 | 2015-05-22 | 주식회사 에스에프에이 | Chemical Vapor Deposition Apparatus for Flat Display |
JP2015138885A (en) | 2014-01-22 | 2015-07-30 | 東京エレクトロン株式会社 | substrate processing apparatus, shower plate and substrate processing method |
KR102243956B1 (en) * | 2014-01-31 | 2021-04-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Chamber coatings |
KR20150113620A (en) | 2014-03-31 | 2015-10-08 | 주성엔지니어링(주) | Gas distributing unit for apparatus treating substrate |
KR20160147482A (en) * | 2015-06-15 | 2016-12-23 | 삼성전자주식회사 | Apparatus for manufacturing Semiconductor Devices Having a Gas Mixing Part |
KR102214350B1 (en) * | 2016-05-20 | 2021-02-09 | 어플라이드 머티어리얼스, 인코포레이티드 | Gas distribution showerhead for semiconductor processing |
-
2017
- 2017-04-20 KR KR1020207026096A patent/KR102214350B1/en active IP Right Grant
- 2017-04-20 CN CN201811492381.4A patent/CN109594061B/en active Active
- 2017-04-20 CN CN201780031024.5A patent/CN109155242B/en active Active
- 2017-04-20 KR KR1020187037145A patent/KR102156390B1/en active IP Right Grant
- 2017-04-20 WO PCT/US2017/028641 patent/WO2017200696A1/en active Application Filing
- 2017-04-20 JP JP2018560796A patent/JP6751448B2/en active Active
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-
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- 2019-01-24 JP JP2019010303A patent/JP6818782B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105185729A (en) * | 2006-05-03 | 2015-12-23 | 应用材料公司 | Vacuum Processing Chamber Suitable For Etching High Aspect Ratio Features And Components Of Same |
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