CN109148338A - A kind of method and device for improving etching machine nitration mixture and changing liquid efficiency - Google Patents
A kind of method and device for improving etching machine nitration mixture and changing liquid efficiency Download PDFInfo
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- CN109148338A CN109148338A CN201811026559.6A CN201811026559A CN109148338A CN 109148338 A CN109148338 A CN 109148338A CN 201811026559 A CN201811026559 A CN 201811026559A CN 109148338 A CN109148338 A CN 109148338A
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- nitration mixture
- etching machine
- acid
- acetic acid
- nitric acid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The present invention provides a kind of method that raising etching machine nitration mixture changes liquid efficiency, comprising: nitration mixture 280L-350L at room temperature is added in deposit slot A in step 1；Step 2 carries out concentration adjusting to the nitration mixture in deposit slot A, the mass fraction of nitration mixture is transferred to hydrofluoric acid 5%-8%, nitric acid 30%-50%, acetic acid 10%-30% by adding hydrofluoric acid 15L-30L, nitric acid 60L-90L, acetic acid 30L-60L；Step 3, by mass fraction in etching machine be hydrofluoric acid 5%-8%, the nitration mixture 280L-350L of nitric acid 30%-50%, acetic acid 10%-30% inject nitration mixture and lays in slot B；The nitration mixture for regulating concentration is injected etching machine by step 4.
Description
Technical field
The present invention relates to semiconductor fields, and in particular to a kind of method and device for improving etching machine nitration mixture and changing liquid efficiency.
Background technique
In the production technology of semi-conductor silicon chip, sour etching technique is a kind of method of most widely used removal damaging layer.
Commonplace mode be by a certain proportion of hydrofluoric acid, nitric acid, acetic acid composition nitration mixture at a certain temperature with silicon wafer
It chemically reacts, erodes the damaging layer on surface, to guarantee the rate of silicon slice corrosion, the corrosion of silicon chip surface in process
Uniformity.But as the size of silicon wafer is increasing, the line width of device is smaller and smaller, requires also to get over to the surface smoothness of silicon wafer
Come higher.This requires the silicon wafers of the different doping types of correspondence the control of the conditions such as more accurate nitration mixture concentration, temperature, bubbling
System, in the switching of silicon wafer kind, the concentration variation of nitration mixture is very greatly.
Present liquid way of changing has the nitration mixture for directly exhausting former ratio, then prepares the nitration mixture of new ratio；Slightly economy is a bit
Way be to add hydrofluoric acid, nitric acid, acetic acid individually on the basis of former nitration mixture ratio to change the ratio of nitration mixture, but also can
A certain proportion of nitration mixture is exhausted, causes to waste, and adds mono-acid to consume a large amount of time, influences production efficiency.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of method that raising etching machine nitration mixture changes liquid efficiency, with
It solves in corrosion process, silicon wafer type change, the corresponding mixed acid solution that corrodes will also change, but adjust the concentration of mixed acid solution
The problem of process is complicated, the time is long, low efficiency.
In view of the problems of the existing technology, the present invention provides a kind of device for improving etching machine nitration mixture and changing liquid efficiency, with
It solves in corrosion process, silicon wafer type change, the corresponding mixed acid solution that corrodes will also change, but adjust the concentration of mixed acid solution
The problem of process is complicated, the time is long, low efficiency.
The technical scheme is that a kind of method for improving etching machine nitration mixture and changing liquid efficiency, comprising:
Nitration mixture 280L-350L at room temperature is added in deposit slot A in step 1；
Step 2, by adding hydrofluoric acid 15L-30L, nitric acid 60L-90L, acetic acid 30L-60L, to mixed in deposit slot A
Acid carries out concentration adjusting, and the mass fraction of nitration mixture is transferred to hydrofluoric acid 5%-8%, nitric acid 30%-50%, acetic acid 10%-30%；
Mass fraction in etching machine is hydrofluoric acid 5%-8%, nitric acid 30%-50%, acetic acid 10%-30% by step 3
Nitration mixture 280L-350L injection nitration mixture lay in slot B；
The nitration mixture for regulating concentration is injected etching machine by step 4.
The present invention can keep in the nitration mixture of two kinds of various concentrations by two deposit slots simultaneously, so as to shorten nitration mixture switching
Time, moreover it is possible to reduce the waste of nitration mixture, save cost.
The nitration mixture 300L being added in slot at room temperature is laid in the step 1.
Hydrofluoric acid 20L, nitric acid 80L, acetic acid 50L are added in the step 2.
Concentration adjusting is carried out to the nitration mixture in deposit slot A in the step 2, the mass fraction of nitration mixture is transferred to hydrofluoric acid
6.5%, nitric acid 35%, acetic acid 20%.
It is the nitration mixture of hydrofluoric acid 5%, nitric acid 30%, acetic acid 10% by mass fraction in etching machine in the step 3
300L injects nitration mixture and lays in slot B.
As a preferred embodiment, a method of improving etching machine nitration mixture and change liquid efficiency, comprising:
Nitration mixture 300L at room temperature is added in deposit slot A in step 1；
Step 2 carries out concentration tune to the nitration mixture in deposit slot A by adding hydrofluoric acid 20L, nitric acid 80L, acetic acid 50L
Section, is transferred to hydrofluoric acid 6.5%, nitric acid 35%, acetic acid 20% for the mass fraction of nitration mixture；
Mass fraction in etching machine is the nitration mixture 300L injection of hydrofluoric acid 5%, nitric acid 30%, acetic acid 10% by step 3
Nitration mixture lays in slot B；
The nitration mixture for regulating concentration is injected etching machine by step 4.
Under the program, nitration mixture switching time is most short, can more preferably adjust the concentration of mixed acid solution faster.
The technical scheme is that a kind of device for improving etching machine nitration mixture and changing liquid efficiency, including an etching machine, it is described
Etching machine connects a nitration mixture recyclable device, and the nitration mixture recyclable device includes a storage tank and a controller, the controller point
The etching machine and the storage tank Kong Zhi not be connected, the controller is also connected with a chemical liguid supply system；
For storing the deposit slot of mixed acid solution there are two being set in the storage tank.
The present invention can not only control the flow direction of medical fluid by controller, and medical fluid can be passed in and out from chemical liguid supply system to be corroded
Machine perhaps exchanged with the nitration mixture medical fluid in storage tank by storage tank or etching machine, moreover it is possible to monitor the nitration mixture in storage tank
Concentration: when etching machine carries out operation, operator can directly adjust the concentration of nitration mixture in storage tank by controller, be not necessarily to
It shuts down.Containing there are two nitration mixture deposit slot in storage tank, the nitration mixture of two kinds of various concentrations can be kept in simultaneously.
Detailed description of the invention
Fig. 1 is the structural block diagram of apparatus of the present invention.
In figure: 1. etching machines, 2. storage tanks, 3. controllers, 4. chemical liguid supply systems.
Specific embodiment
Following further describes the present invention with reference to the drawings.
A method of it improving etching machine nitration mixture and changes liquid efficiency, comprising: step 1, in deposit slot A addition mixing at room temperature
Sour 280L-350L；Step 2, by adding hydrofluoric acid 15L-30L, nitric acid 60L-90L, acetic acid 30L-60L, in deposit slot A
Nitration mixture carry out concentration adjusting, the mass fraction of nitration mixture is transferred to hydrofluoric acid 5%-8%, nitric acid 30%-50%, acetic acid 10%-
30%；Mass fraction in etching machine is hydrofluoric acid 5%-8% by step 3, nitric acid 30%-50%, acetic acid 10%-30% it is mixed
Sour 280L-350L injection nitration mixture lays in slot B；The nitration mixture for regulating concentration is injected etching machine by step 4.The present invention passes through two
Deposit slot can keep in the nitration mixture of two kinds of various concentrations simultaneously, so as to shorten nitration mixture switching time, moreover it is possible to reduce the wave of nitration mixture
Take, saves cost.
The nitration mixture 300L being added in slot at room temperature is laid in step 1.Hydrofluoric acid 20L, nitric acid 80L, vinegar are added in step 2
Sour 50L.In step 2 to deposit slot A in nitration mixture carry out concentration adjusting, by the mass fraction of nitration mixture be transferred to hydrofluoric acid 6.5%,
Nitric acid 35%, acetic acid 20%.It is hydrofluoric acid 5%, nitric acid 30%, acetic acid 10% by mass fraction in etching machine in step 3
Nitration mixture 300L injects nitration mixture and lays in slot B.
As a preferred embodiment, a method of improving etching machine nitration mixture and change liquid efficiency, comprising: step 1 is being laid in
Nitration mixture 300L at room temperature is added in slot A；Step 2, by adding hydrofluoric acid 20L, nitric acid 80L, acetic acid 50L, in deposit slot A
Nitration mixture carry out concentration adjusting, the mass fraction of nitration mixture is transferred to hydrofluoric acid 6.5%, nitric acid 35%, acetic acid 20%；Step 3,
It is the nitration mixture 300L injection nitration mixture deposit slot B of hydrofluoric acid 5%, nitric acid 30%, acetic acid 10% by mass fraction in etching machine；Step
Four, the nitration mixture for regulating concentration is injected into etching machine.Under the program, nitration mixture switching time is most short, can more preferably adjust faster mixed
The concentration of acid solution.
Referring to Fig.1, the technical scheme is that a kind of raising etching machine nitration mixture changes the device of liquid efficiency, including a corruption
Erosion machine 1, etching machine connect a nitration mixture recyclable device, and nitration mixture recyclable device includes a storage tank 2 and a controller 3, controller point
Not Kong Zhi junction corrosion machine and storage tank, controller is also connected with a chemical liguid supply system 4；For storing there are two being set in storage tank
The deposit slot of mixed acid solution.
The present invention can not only control the flow direction of medical fluid by controller, and medical fluid can be passed in and out from chemical liguid supply system to be corroded
Machine perhaps exchanged with the nitration mixture medical fluid in storage tank by storage tank or etching machine, moreover it is possible to monitor the nitration mixture in storage tank
Concentration: when etching machine carries out operation, operator can directly adjust the concentration of nitration mixture in storage tank by controller, be not necessarily to
It shuts down.Containing there are two nitration mixture deposit slot in storage tank, the nitration mixture of two kinds of various concentrations can be kept in simultaneously.
The above is only the preferred embodiment of the present invention, it is noted that those skilled in the art are come
It says, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (7)
1. a kind of method for improving etching machine nitration mixture and changing liquid efficiency characterized by comprising
Nitration mixture 280L-350L at room temperature is added in deposit slot A in step 1；
Step 2, by add hydrofluoric acid 15L-30L, nitric acid 60L-90L, acetic acid 30L-60L, to deposit slot A in nitration mixture into
Row concentration is adjusted, and the mass fraction of nitration mixture is transferred to hydrofluoric acid 5%-8%, nitric acid 30%-50%, acetic acid 10%-30%；
Mass fraction in etching machine is hydrofluoric acid 5%-8% by step 3, nitric acid 30%-50%, acetic acid 10%-30% it is mixed
Sour 280L-350L injection nitration mixture lays in slot B；
The nitration mixture for regulating concentration is injected etching machine by step 4.
2. a kind of method for improving etching machine nitration mixture and changing liquid efficiency according to claim 1, it is characterised in that: the step
The nitration mixture 300L being added in slot at room temperature is laid in one.
3. a kind of method for improving etching machine nitration mixture and changing liquid efficiency according to claim 1, it is characterised in that: the step
Hydrofluoric acid 20L, nitric acid 80L, acetic acid 50L are added in two.
4. a kind of method for improving etching machine nitration mixture and changing liquid efficiency according to claim 1, it is characterised in that: the step
Concentration adjusting is carried out to the nitration mixture in deposit slot A in two, the mass fraction of nitration mixture is transferred to hydrofluoric acid 6.5%, nitric acid 35%, vinegar
Acid 20%.
5. a kind of method for improving etching machine nitration mixture and changing liquid efficiency according to claim 1, it is characterised in that: the step
It is the nitration mixture 300L injection nitration mixture deposit slot of hydrofluoric acid 5%, nitric acid 30%, acetic acid 10% by mass fraction in etching machine in three
B。
6. it is used as a kind of scheme, a method of it improving etching machine nitration mixture and changes liquid efficiency, it is characterised in that: include:
Nitration mixture 300L at room temperature is added in deposit slot A in step 1；
Step 2 carries out concentration adjusting to the nitration mixture in deposit slot A by adding hydrofluoric acid 20L, nitric acid 80L, acetic acid 50L, will
The mass fraction of nitration mixture is transferred to hydrofluoric acid 6.5%, nitric acid 35%, acetic acid 20%；
Mass fraction in etching machine is the nitration mixture 300L injection nitration mixture of hydrofluoric acid 5%, nitric acid 30%, acetic acid 10% by step 3
Lay in slot B；
The nitration mixture for regulating concentration is injected etching machine by step 4.
7. a kind of device for improving etching machine nitration mixture and changing liquid efficiency, it is characterised in that: including an etching machine, the etching machine connection
One nitration mixture recyclable device, the nitration mixture recyclable device include a storage tank and a controller, and the controller controls connection respectively
The etching machine and the storage tank, the controller are also connected with a chemical liguid supply system；
For storing the deposit slot of mixed acid solution there are two being set in the storage tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811026559.6A CN109148338A (en) | 2018-09-04 | 2018-09-04 | A kind of method and device for improving etching machine nitration mixture and changing liquid efficiency |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811026559.6A CN109148338A (en) | 2018-09-04 | 2018-09-04 | A kind of method and device for improving etching machine nitration mixture and changing liquid efficiency |
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| CN201811026559.6A Pending CN109148338A (en) | 2018-09-04 | 2018-09-04 | A kind of method and device for improving etching machine nitration mixture and changing liquid efficiency |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180325A (en) * | 2019-12-31 | 2020-05-19 | 杭州中欣晶圆半导体股份有限公司 | Method for improving operating efficiency of etching machine |
| CN115579311A (en) * | 2022-12-02 | 2023-01-06 | 湖北江城芯片中试服务有限公司 | Control method and device for mixed acid activation state, computer equipment and storage medium |
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| US20140230851A1 (en) * | 2009-06-09 | 2014-08-21 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and computer-readable medium storing program |
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| CN1645574A (en) * | 2005-01-07 | 2005-07-27 | 友达光电股份有限公司 | Etching liquid recovering system and method |
| JP2007150352A (en) * | 2007-02-19 | 2007-06-14 | Seiko Epson Corp | Treatment apparatus and method of manufacturing semiconductor device |
| TW201005076A (en) * | 2008-07-31 | 2010-02-01 | Nihon Valqua Kogyo Kk | Process for regenerating a phosphoric acid-containing treatment liquid |
| US20140230851A1 (en) * | 2009-06-09 | 2014-08-21 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and computer-readable medium storing program |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180325A (en) * | 2019-12-31 | 2020-05-19 | 杭州中欣晶圆半导体股份有限公司 | Method for improving operating efficiency of etching machine |
| CN115579311A (en) * | 2022-12-02 | 2023-01-06 | 湖北江城芯片中试服务有限公司 | Control method and device for mixed acid activation state, computer equipment and storage medium |
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Effective date of registration: 20191216 Address after: 310000 No. 3899 Jiangdong Avenue 709-18, Dajiangdong Industrial Agglomeration Area, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant after: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. Applicant after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Address before: 310000 No. 3899 Jiangdong Avenue 709-18, Dajiangdong Industrial Agglomeration Area, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant before: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. Applicant before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
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Address after: 310000 709-18, 3899 Jiangdong Avenue, dajiangdong industrial cluster, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant after: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 310000 709-18, 3899 Jiangdong Avenue, dajiangdong industrial cluster, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. Applicant before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. |
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Address after: 311225 No. 888, dongken Road, Qiantang New District, Hangzhou City, Zhejiang Province Applicant after: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 310000 709-18, 3899 Jiangdong Avenue, dajiangdong industrial cluster, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. Applicant before: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. |
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