CN106647164B - Method for preventing etching solution conveying pipeline from crystallizing - Google Patents
Method for preventing etching solution conveying pipeline from crystallizing Download PDFInfo
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- CN106647164B CN106647164B CN201510741988.1A CN201510741988A CN106647164B CN 106647164 B CN106647164 B CN 106647164B CN 201510741988 A CN201510741988 A CN 201510741988A CN 106647164 B CN106647164 B CN 106647164B
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Abstract
A method for avoiding crystallization of an etching solution conveying pipeline relates to a method or equipment specially suitable for manufacturing or processing a semiconductor or a solid device or a component thereof, in particular to a method for avoiding generation of crystallization in the etching solution conveying pipeline in a manufacturing and etching process of a photomask and a pipeline structure thereof, and comprises the following steps: sending etching liquid into the etching liquid conveying pipeline to replace the etching buffer liquid and the pure water in the etching liquid conveying pipeline; continuously conveying the etching solution to finish the etching process of the etched workpiece; sending an etching buffer solution into the etching solution conveying pipeline to replace the etching solution in the etching solution conveying pipeline; pure water is used for replacing the etching buffer solution from the second valve C port of the etching solution delivery pipeline to the nozzle section. The crystallization of the etching liquid conveying pipeline can be effectively prevented, the influence of the crystallized substances on the subsequent etching process and the quality of the mask finished product is avoided, the time wasted by regular cleaning is saved, the stability and the reliability of the etching process are improved, and the continuity of the production process is kept.
Description
Technical Field
The present invention relates to a method or apparatus specially adapted for manufacturing or processing a semiconductor or solid device or a component thereof, and more particularly, to a method for preventing generation of crystals in an etching liquid supply line in a photomask manufacturing etching process, and a line structure thereof.
Background
In the manufacture of a photomask, an etching process is an important process flow, and the main components of an etching solution in the etching process are reduced in solubility when the pH value is changed, so that crystals are separated out. In the prior etching process, the structure of an etching solution delivery pipeline of an etching device is shown in fig. 1, and before etching starts, pure water is filled in an etching solution delivery pipeline 10 from an outlet of a valve 20 to a spray head 30; after etching begins, the etching solution passes from the port A to the port C of the valve 20, passes through the etching solution conveying pipeline 10 to reach the spray head 30, and replaces pure water in the etching solution conveying pipeline 10; after the etching process is finished, pure water needs to be introduced into the etching solution conveying pipeline 10 through the port B to the port C of the valve 20 again, and the etching solution is replaced again to fill the whole etching solution conveying pipeline 10. In the two liquid alternation processes of pure water and etching liquid, the pH value in the etching liquid conveying pipeline 10 is suddenly changed, so that crystals are separated out from the etching liquid in the etching liquid conveying pipeline 10, obvious crystals are accumulated in the etching liquid conveying pipeline 10 after a long-time alternating operation process, the crystals cause local high-concentration etching components in the subsequent etching process and penetrate through photoresist to cause Cr mask pattern damage, and simultaneously, separated out crystals can cause particle pollution to etched masks.
The invention patent "cleaning method of etching equipment component" (chinese patent No. ZL01820298.5 issued publication No. CN 1266262C) entered china via PCT application route discloses a method for removing etching residues from etching equipment components. The composition used is an aqueous acidic composition comprising fluoride and a polar organic solvent. The composition is free of ethylene glycol and hydroxylamine and has low surface tension and low viscosity. The invention aims to remove the etching byproducts generated on the components of the etching chamber in the plasma gas phase etching equipment, and particularly uses a special chemical agent to soak the components to clean the byproducts on the surfaces of the components.
The Chinese patent application for invention "etching machine and method for cleaning crystal of the etching machine" (invention patent application No. 201310153849.8 application publication No. CN104124147A) discloses an etching machine and method for cleaning crystal of the etching machine. The invention relates to a method for cleaning the chemical solution in an etching chamber of an etching device, which comprises the steps of modifying the structure of the etching chamber of the etching device, and matching one end (the outlet end of an etched workpiece) of the etching chamber with a water washing function, wherein a substrate enters from an inlet of the etching chamber and is conveyed to an outlet of the etching chamber, the substrate is contacted with the chemical solution in a chemical solution tank in the conveying process in the etching chamber, a water replenishing pipeline of the etching chamber can inject water into the chemical solution tank through the outlet, and the water from the water replenishing pipeline can adjust the concentration of the chemical solution in the chemical solution tank and can clean the chemical solution crystal at the outlet. The invention can clean the easy-crystallization part of the machine platform, such as the outlet of the formed air curtain, while replenishing water, thereby increasing the cleaning time and times of the easy-crystallization part, effectively reducing the occurrence of crystallization and improving the product percent of pass. The invention aims to clean the etching liquid crystal at the outlet end of the workpiece of the etching cavity through the improved new function.
The above prior art solutions all aim to remove or clean etching residues or etching liquid crystals generated on the etching equipment components in the etching process, and do not consider the problem that crystals are generated and accumulated in the etching liquid conveying pipeline. For crystals generated and accumulated in an etching liquid conveying pipeline, the existing technical measures are only to clean the pipeline periodically or immediately clean the pipeline after the graph is damaged, and the technical problem of crystal precipitation is not fundamentally solved. The long regular cleaning intervals easily result in serious pattern damage, and the short regular cleaning intervals waste manpower and machine service time.
Disclosure of Invention
The invention aims to provide a method which is applicable to the manufacturing process of a semiconductor or a solid device and can avoid crystallization of an etching solution conveying pipeline.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a method for avoiding the crystallization of the conveying pipeline of the etching solution, used for the etching equipment of the semiconductor or solid device manufacturing process, the said etching equipment includes connecting the conveying pipeline of the etching solution between first valve and spray nozzle, characterized by;
a second valve is arranged at the connecting part of the etching liquid conveying pipeline and the nozzle;
the method for avoiding the crystallization of the etching solution conveying pipeline comprises the following steps:
the first step is as follows: before the etching process starts, sending etching liquid into the etching liquid conveying pipeline from the port A to the port C of the first valve until the etching liquid is filled into all the etching liquid conveying pipelines from the port C of the first valve to the nozzle from the port A to the port C of the second valve to replace etching buffer liquid and pure water in the etching liquid conveying pipeline;
the second step is that: continuously conveying the etching solution from the port A to the port C of the first valve through the etching solution conveying pipeline and from the port A to the port C of the second valve to finish the etching process of the etched workpiece;
the third step: after the etching process is finished, sending an etching buffer solution to the etching solution conveying pipeline from the port B to the port C of the first valve to replace the etching solution in the etching solution conveying pipeline until the etching buffer solution is filled in all the etching solution conveying pipelines from the port C of the first valve to the nozzle from the port A to the port C of the second valve;
the fourth step: pure water is fed in from the port B to the port C of the second valve, and the pure water is used for replacing the etching buffer solution from the port C of the second valve in the etching solution conveying pipeline to the nozzle section.
The invention discloses a preferable technical scheme of a method for avoiding crystallization of an etching solution conveying pipeline, which is characterized in that an etching buffer solution is prepared from pure water, ultrapure hydrochloric acid and a surfactant, wherein the using amount of the ultrapure hydrochloric acid depends on the pH value of the etching solution, and the pH value of the etching buffer solution is adjusted to be consistent with that of the etching solution by changing the using amount of the ultrapure hydrochloric acid; the surfactant is of a type and amount that ensures that the etching buffer wets the etched workpiece and does not affect the etching process.
The invention discloses a better technical scheme of a method for avoiding crystallization of an etching solution conveying pipeline.
The invention has the beneficial effects that:
1. the method for avoiding crystallization of the etching liquid conveying pipeline can effectively prevent the crystallization problem of the etching liquid conveying pipeline, avoid the influence of crystals accumulated in the etching liquid conveying pipeline on the subsequent etching process and the quality of a mask finished product, save the time wasted by cleaning at regular intervals and reduce the product quality risk cost.
2. According to the method for preventing the etching liquid conveying pipeline from crystallizing, the structure of the etching liquid conveying pipeline is improved, automatic control can be achieved on the existing etching equipment machine, the stability and the reliability of the etching process are improved, and the continuity of the production process is kept.
Drawings
FIG. 1 is a schematic diagram of an etching solution delivery pipeline of a conventional etching apparatus;
FIG. 2 is a schematic diagram of an etching solution delivery pipeline structure of the method for preventing crystallization of the etching solution delivery pipeline according to the present invention.
Detailed Description
In order to better understand the technical solution of the present invention, the following detailed description is made with reference to the accompanying drawings and specific embodiments.
The method for avoiding the crystallization of the etching liquid conveying pipeline is used for the etching equipment of the semiconductor or solid device manufacturing process, as shown in figure 2, the etching equipment comprises the etching liquid conveying pipeline 10 connected between a first valve 21 and a nozzle 30, and a second valve 22 is arranged at the connecting part of the etching liquid conveying pipeline 10 and the nozzle 30;
the method for avoiding the crystallization of the etching solution conveying pipeline comprises the following steps:
the first step is as follows: before the etching process begins, sending etching solution into the etching solution delivery pipeline 10 through the port A to the port C of the first valve 21 until the etching solution fills the whole etching solution delivery pipeline 10 from the port C of the first valve 21 to the nozzle 30 through the port A to the port C of the second valve 22 to replace the etching buffer solution and the pure water in the etching solution delivery pipeline 10; in this step, the original etching buffer solution in the etching solution delivery pipeline 10 is first squeezed by the etching solution from the port a of the first valve 21, and flows to the nozzle through the port a to the port C of the second valve 22, instead of the pure water in the etching solution delivery pipeline to the nozzle section after the port C of the second valve; although the pH value of the process of replacing water by the etching buffer solution changes sharply, the problem of crystal precipitation does not occur because the etching buffer solution does not contain components of the etching solution which can precipitate crystals. Then, along with the flow of the etching solution entering the etching solution conveying pipeline 10, the etching solution gradually replaces the etching buffer solution in the etching solution conveying pipeline 10, the pH value of the etching solution replacing the etching buffer solution is kept unchanged, and the components which are contained in the etching solution and can possibly separate out crystals cannot separate out crystals due to the change of the pH value; therefore, the crystallization of the etching solution entering the etching solution delivery pipe 10 is completely avoided in this step.
The second step is that: continuously conveying the etching solution from the port A to the port C of the first valve through the etching solution conveying pipeline and from the port A to the port C of the second valve to finish the etching process of the etched workpiece; this step implements a normal etching process to perform an etching operation on the etched workpiece.
The third step: after the etching process is finished, sending an etching buffer solution to the etching solution conveying pipeline from the port B to the port C of the first valve to replace the etching solution in the etching solution conveying pipeline until the etching buffer solution is filled in all the etching solution conveying pipelines from the port C of the first valve to the nozzle from the port A to the port C of the second valve; in this step, the original etching solution in the etching solution delivery pipeline 10 is gradually replaced by the etching buffer solution flowing in through the port B of the first valve, the PH value of the etching buffer solution is kept unchanged in the process of replacing the etching solution, and the components which may precipitate crystals contained in the etching solution cannot precipitate crystals due to the change of the PH value; therefore, the crystallization generated in the process of replacing the etching solution with the etching buffer solution in the etching solution conveying pipeline 10 is avoided in the step.
The fourth step: pure water is fed in from the port B to the port C of the second valve, and the pure water is used for replacing the etching buffer solution from the port C of the second valve in the etching solution conveying pipeline to the nozzle section. In this step, the etching buffer solution in the etching solution supply line 10 to the nozzle block after the third step enters the port C of the second valve is replaced by pure water supplied through the port B of the second valve 22, and the process of replacing the etching buffer solution by the pure water does not contain components of the etching solution that may precipitate crystals, and the problem of precipitation of crystals does not occur although the PH value is changed sharply.
Therefore, in the whole process, the process of direct liquid alternation of pure water and etching liquid is completely avoided, and the technical problem that crystals are generated and accumulated in an etching liquid conveying pipeline is effectively solved.
According to a preferred embodiment of the method for avoiding the crystallization of the etching solution conveying pipeline, the etching buffer solution is prepared from pure water, ultrapure hydrochloric acid and a surfactant, wherein the using amount of the ultrapure hydrochloric acid depends on the pH value of the etching solution, and the pH value of the etching buffer solution is adjusted to be consistent with the etching solution by changing the using amount of the ultrapure hydrochloric acid; the surfactant is of a type and amount that ensures that the etching buffer wets the etched workpiece and does not affect the etching process.
According to one embodiment of the method for avoiding crystallization of the etching solution conveying pipeline, aiming at the etching solution for metal chromium on the surface of the photomask, the etching buffer solution is prepared by dropping about 3% of ultrapure hydrochloric acid into ultrapure water; the surfactant is a trace amount of surfactant containing fluorine groups. In the process of preparing the etching buffer solution, the pH value of the etching solution and the pH value of the etching buffer solution need to be compared, and the pH value of the etching buffer solution is ensured to be consistent with that of the etching solution actually used by controlling the dropping amount of the ultrapure hydrochloric acid.
According to a preferred embodiment of the method for preventing crystallization of the etching solution delivery pipeline, the first valve and the second valve are both two-in one-out type polytetrafluoroethylene two-position three-way electromagnetic valves, and the actions of the electromagnetic valves can be controlled by utilizing a control device of the existing etching equipment, so that the automatic control of the method is realized.
It should be appreciated by those skilled in the art that the above embodiments are only for illustrating the technical solutions of the present invention, and not for limiting the present invention, and any changes and modifications to the above embodiments based on the spirit of the present invention will fall within the protection scope of the claims of the present invention.
Claims (2)
1. A method for preventing crystallization of an etching liquid delivery pipe, which is used for an etching apparatus in a semiconductor or solid device manufacturing process, the etching apparatus comprising the etching liquid delivery pipe connected between a first valve and a nozzle, characterized in that:
a second valve is arranged at the connecting part of the etching liquid conveying pipeline and the nozzle;
the method for avoiding the crystallization of the etching solution conveying pipeline comprises the following steps:
the first step is as follows: before the etching process starts, sending etching liquid into the etching liquid conveying pipeline from the port A to the port C of the first valve until the etching liquid is filled into all the etching liquid conveying pipelines from the port C of the first valve to the nozzle from the port A to the port C of the second valve to replace etching buffer liquid and pure water in the etching liquid conveying pipeline;
the second step is that: continuously conveying the etching solution from the port A to the port C of the first valve through the etching solution conveying pipeline and from the port A to the port C of the second valve to finish the etching process of the etched workpiece;
the third step: after the etching process is finished, sending an etching buffer solution to the etching solution conveying pipeline from the port B to the port C of the first valve to replace the etching solution in the etching solution conveying pipeline until the etching buffer solution is filled in all the etching solution conveying pipelines from the port C of the first valve to the nozzle from the port A to the port C of the second valve;
the fourth step: pure water is fed from the port B to the port C of the second valve, and the pure water replaces the etching buffer solution which is fed to the nozzle section after the port C of the second valve in the etching solution conveying pipeline;
the etching buffer solution is prepared from pure water, ultrapure hydrochloric acid and a surfactant, wherein the using amount of the ultrapure hydrochloric acid depends on the pH value of the etching solution, and the pH value of the etching buffer solution is adjusted to be consistent with that of the etching solution by changing the using amount of the ultrapure hydrochloric acid; the surfactant is of a type and amount that ensures that the etching buffer wets the etched workpiece and does not affect the etching process.
2. The method according to claim 1, wherein the first valve and the second valve are both a two-in one-out type ptfe two-position three-way solenoid valve.
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| CN201510741988.1A CN106647164B (en) | 2015-11-04 | 2015-11-04 | Method for preventing etching solution conveying pipeline from crystallizing |
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| CN106647164B true CN106647164B (en) | 2020-04-14 |
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|---|---|---|---|---|
| JP2011040653A (en) * | 2009-08-17 | 2011-02-24 | Asahi Glass Co Ltd | Method of cleaning photomask blanks |
| CN102085522A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning pipeline sprayed with silicon-containing bottom anti-reflection coating |
| CN104124147A (en) * | 2013-04-27 | 2014-10-29 | 上海和辉光电有限公司 | An etching machine and a method for cleaning crystals of the etching machine |
| CN204185388U (en) * | 2014-06-11 | 2015-03-04 | 上海和辉光电有限公司 | Liquid reflux |
| CN104979388A (en) * | 2014-04-01 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacture method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9244368B2 (en) * | 2012-09-26 | 2016-01-26 | Kla-Tencor Corporation | Particle control near reticle and optics using showerhead |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011040653A (en) * | 2009-08-17 | 2011-02-24 | Asahi Glass Co Ltd | Method of cleaning photomask blanks |
| CN102085522A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning pipeline sprayed with silicon-containing bottom anti-reflection coating |
| CN104124147A (en) * | 2013-04-27 | 2014-10-29 | 上海和辉光电有限公司 | An etching machine and a method for cleaning crystals of the etching machine |
| CN104979388A (en) * | 2014-04-01 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacture method thereof |
| CN204185388U (en) * | 2014-06-11 | 2015-03-04 | 上海和辉光电有限公司 | Liquid reflux |
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