TWI485757B - Process system and cleaning process - Google Patents
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Description
本發明是有關於一種製程系統與清洗製程。The invention relates to a process system and a cleaning process.
在半導體製程中，晶圓的潔淨度是影響製程良率元件品質以及可靠度極為重要的因素。在晶圓洗淨的過程中，經常會使用化學溶液來清洗。化學溶液中的配方可能會因為消耗或是揮發而隨著使用的時間逐漸改變，以致製程容許度(process window)隨之變小。通常，必須藉由經常更換新的化學溶液來維持洗淨的品質，進而穩定製程的條件。然而，此種做法不僅必須耗費相當高的材料成本，而且也不夠環保。因此，提供適當的化學濃度溶液的濃度並且兼顧環保層面是目前亟需研究的課題。In semiconductor manufacturing, wafer cleanliness is an extremely important factor affecting process yield component quality and reliability. In the process of wafer cleaning, chemical solutions are often used for cleaning. The formulation in the chemical solution may gradually change with the time of use due to consumption or volatilization, so that the process window becomes smaller. In general, the quality of the cleaning must be maintained by constantly replacing new chemical solutions to stabilize the process conditions. However, this approach not only requires considerable material costs, but is also not environmentally friendly. Therefore, it is an urgent task to provide an appropriate concentration of a chemical concentration solution and to take into consideration the environmental protection level.
本發明提出一種製程系統，其可以用來清洗晶圓，提升製程的容許度。The present invention provides a process system that can be used to clean wafers and increase process tolerance.
本發明提出一種製程系統，其可以用來清洗晶圓，延長化學溶液更新的時間，降低化學溶液的使用量，減少成本。The invention provides a process system which can be used for cleaning wafers, prolonging the time of chemical solution renewal, reducing the use of chemical solutions and reducing costs.
本發明提出一種清洗製程，其提升製程的容許度。The present invention proposes a cleaning process that increases the tolerance of the process.
本發明提出一種清洗製程，其可以延長化學溶液更新的時間，降低化學溶液的使用量，減少成本。The invention provides a cleaning process which can prolong the time of chemical solution renewal, reduce the amount of chemical solution used, and reduce the cost.
本發明提出一種製程系統，包括生產機台、濃度測定裝置以及補償裝置。生產機台，適於使用化學溶液處理晶圓。濃度測定裝置，用以測定處理過上述晶圓之上述化學溶液中至少一關鍵成分的濃度。補償裝置，用以在上述濃度測定裝置所測定之上述關鍵成分的濃度低於一定值時，提供具有一補償量之補充液至上述生產機台中，其中上述補充液具有與上述關鍵成分相同的成分。The invention provides a process system comprising a production machine, a concentration measuring device and a compensation device. A production machine suitable for processing wafers with chemical solutions. A concentration measuring device for measuring a concentration of at least one of the key components of the chemical solution treated with the wafer. a compensating device for providing a replenishing liquid having a compensation amount to the production machine when the concentration of the key component measured by the concentration measuring device is lower than a certain value, wherein the replenishing liquid has the same composition as the above-mentioned key component .
依照本發明一實施例所述，上述化學溶液包括去光阻液，上述關鍵成分包括水。According to an embodiment of the invention, the chemical solution comprises a photoresist removal solution, and the key component comprises water.
依照本發明一實施例所述，上述化學溶液包括清洗液，上述關鍵成分包括NH4 OH或H2 O2 或其二者。In accordance to an embodiment of the present invention, the cleaning liquid comprises a chemical solution, comprising the above-described key ingredient NH 4 OH or H 2 O 2, or both.
依照本發明一實施例所述，上述之製程系統更包括一過濾裝置，用以過濾處理過上述晶圓之上述化學溶液之中的雜質。According to an embodiment of the invention, the process system further includes a filtering device for filtering impurities in the chemical solution processed by the wafer.
依照本發明一實施例所述，上述製程系統，更包括一回流裝置，用以將過濾後的上述化學溶液輸送回上述生產機台。According to an embodiment of the invention, the process system further includes a reflow device for conveying the filtered chemical solution back to the production machine.
依照本發明一實施例所述，上述濃度測定裝置設置於適於測定上述回流裝置中或是該生產機台中之上述化學溶液中的上述關鍵成分的濃度。According to an embodiment of the invention, the concentration measuring device is provided for measuring a concentration of the key component in the chemical solution in the reflux device or in the production machine.
依照本發明一實施例所述，上述生產機台包括一處理槽，且上述回流裝置包括外槽、輸送管路以及動力裝置。外槽設置於上述處理槽外圍。動力裝置用以提供動力該化學溶液。輸送管路，與上述外槽連通，用以將外槽中的化學溶液輸送回上述處理槽。According to an embodiment of the invention, the production machine includes a processing tank, and the reflux device includes an outer tank, a conveying pipeline, and a power device. The outer groove is disposed at the periphery of the processing tank. A power unit is used to power the chemical solution. A delivery line is in communication with the outer tank for transporting the chemical solution in the outer tank back to the treatment tank.
依照本發明一實施例所述，上述濃度測定裝置設置於適於測定處理槽、上述外槽或上述輸送管路中的上述化學溶液中的上述關鍵成分的濃度。According to an embodiment of the present invention, the concentration measuring device is provided at a concentration of the key component in the chemical solution suitable for measuring the processing tank, the outer tank, or the conveying line.
依照本發明一實施例所述，上述補償裝置用以將上述補充液輸送至上述外槽中，再經由上述輸送管路輸送至上述生產機台中。According to an embodiment of the invention, the compensating device is configured to transport the replenishing liquid to the outer tank, and then to the production machine through the conveying pipeline.
依照本發明一實施例所述，上述回流裝置還包括一溫度控制器，設置於上述輸送管路周圍，用以控制上述化學溶液之溫度。According to an embodiment of the invention, the reflow device further includes a temperature controller disposed around the transfer line for controlling the temperature of the chemical solution.
本發明還提出一種清洗製程，此製程使用化學溶液處理晶圓，此上述方法包括測定製程中或製程後之上述化學溶液中至少一關鍵成分的濃度，當上述關鍵成分的濃度低於一定值時，添加一補充液，其含有與前述關鍵成分相同的成分，使上述化學溶液中的上述關鍵成分濃度達到上述定值或上述定值以上。The present invention also provides a cleaning process for treating a wafer using a chemical solution, the method comprising determining a concentration of at least one of the key components in the chemical solution during or after the process, when the concentration of the key component is less than a certain value And adding a replenishing liquid containing the same components as the above-mentioned key components, so that the concentration of the above-mentioned key components in the above chemical solution reaches the above-mentioned fixed value or more than the above-mentioned fixed value.
依照本發明一實施例所述，上述化學溶液包括去光阻液，上述關鍵成分包括水。According to an embodiment of the invention, the chemical solution comprises a photoresist removal solution, and the key component comprises water.
依照本發明一實施例所述，上述化學溶液包括清洗液，上述關鍵成分包括NH4 OH或H2 O2 或其二者。According to an embodiment of the invention, the chemical solution comprises a cleaning solution, and the key components include NH 4 OH or H 2 O 2 or both.
依照本發明一實施例所述，上述清洗製程，更包括在進行製程一段時間之後，更新上述化學溶液。According to an embodiment of the invention, the cleaning process further includes updating the chemical solution after performing the process for a period of time.
依照本發明實施例所述，上述製程系統可以用來清洗晶圓，提升製程的容許度。According to the embodiment of the invention, the process system can be used to clean the wafer and improve the tolerance of the process.
依照本發明實施例所述，上述製程系統可以用來清洗晶圓，延長化學溶液更新的時間，降低化學溶液的使用量，減少成本。According to the embodiment of the invention, the process system can be used to clean the wafer, prolong the time of chemical solution renewal, reduce the amount of chemical solution used, and reduce the cost.
依照本發明實施例所述，上述清洗製程可以提升製程的容許度。According to the embodiment of the invention, the cleaning process can increase the tolerance of the process.
依照本發明實施例所述，上述清洗製程可以延長化學溶液更新的時間，降低化學溶液的使用量，減少成本。According to the embodiment of the invention, the cleaning process can prolong the time of chemical solution renewal, reduce the amount of chemical solution used, and reduce the cost.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1為依照本發明實施例所繪示之一種製程系統的示意圖。FIG. 1 is a schematic diagram of a process system according to an embodiment of the invention.
請參照圖1，製程系統100包括生產機台10、濃度測定裝置20以及補償裝置30。Referring to FIG. 1 , the process system 100 includes a production machine 10 , a concentration measuring device 20 , and a compensation device 30 .
生產機台10，適於使用化學溶液處理晶圓2。在一實施例中，生產機台10為濕式洗滌站，其包括處理槽12，，處理槽12例如是溢流內槽。製程系統可以還包括過濾裝置40、回流裝置50以及溫度控制器60。The production machine 10 is adapted to process the wafer 2 using a chemical solution. In one embodiment, the production machine 10 is a wet scrubbing station that includes a processing tank 12, such as an overflow inner tank. The process system can further include a filtration device 40, a reflux device 50, and a temperature controller 60.
過濾裝置40用以過濾處理過晶圓2之化學溶液之中的雜質，例如是晶圓2上的副產物。The filtering device 40 is used to filter impurities in the chemical solution processed by the wafer 2, such as by-products on the wafer 2.
回流裝置50用以將經過濾之化學溶液輸送回生產機台10中。在一示範實施例中，回流裝置50包括外槽52、輸送管路54與動力裝置56。外槽52設置於處理槽12外圍，用以承載從處理槽12溢流出來的化學溶液。輸送管路54與外槽52連通，用以將外槽52的化學溶液透過動力裝置56輸送回處理槽12，以循環再利用化學溶液。動力裝置56例如是泵。The reflux device 50 is used to deliver the filtered chemical solution back to the production machine 10. In an exemplary embodiment, the return device 50 includes an outer tank 52, a transfer line 54 and a power unit 56. The outer tank 52 is disposed at the periphery of the treatment tank 12 for carrying the chemical solution overflowing from the treatment tank 12. The transfer line 54 communicates with the outer tank 52 for transporting the chemical solution of the outer tank 52 back to the treatment tank 12 through the power unit 56 to recycle the chemical solution. Powerplant 56 is, for example, a pump.
溫度控制器60，例如是加熱器，其設置於輸送管路54周圍，用以控制化學溶液的溫度。A temperature controller 60, such as a heater, is disposed about the delivery line 54 for controlling the temperature of the chemical solution.
濃度測定裝置20，用以測定處理過晶圓2之化學溶液中至少一關鍵成分的濃度，並將所測得的濃度資訊傳送至補償裝置30。The concentration measuring device 20 is configured to measure the concentration of at least one key component in the chemical solution processed by the wafer 2, and transmit the measured concentration information to the compensation device 30.
此處所述的處理過晶圓2的化學溶液可以是處理槽12中的化學溶液，外槽52中的化學溶液，或是輸送管路54中的化學溶液。濃度測定裝置20例如是濃度計。濃度測定裝置20所測定的關鍵成分是指化學溶液中對於所處理的晶圓具有重要性影響的成分。當對於所處理的晶圓具有重要性影響的成分為一種，則關鍵成分則為一種。當對於所處理的晶圓具有重要性影響的成分為兩種，則關鍵成分可以是一種或是兩種。依此類推。The chemical solution treated wafer 2 described herein may be a chemical solution in treatment tank 12, a chemical solution in outer tank 52, or a chemical solution in transfer line 54. The concentration measuring device 20 is, for example, a concentration meter. The key component measured by the concentration measuring device 20 refers to a component in the chemical solution that has an important influence on the processed wafer. When there is one component that has an important influence on the wafer to be processed, the key component is one. When there are two components that have an important influence on the processed wafer, the key component may be one or two. So on and so forth.
補償裝置30可以接收濃度測定裝置20所測得的關鍵成分的濃度資訊，當所得到的濃度資訊低於一定值時，計算所需的補償量，提供含有與關鍵成分相同成分的補充液至生產機台10中，補償化學溶液中關鍵成分之濃度。在一實施例中，補償裝置30係先將補充液輸送至外槽12中，再經由輸送管路54輸送至生產機台10中。在另一實施例中，補償裝置30亦可將補充液直接送至生產機台10中(未繪示)。在又一實施例中，補償裝置30係先將補充液直接透過輸送管路54輸送至生產機台10中(未繪示)。The compensation device 30 can receive the concentration information of the key component measured by the concentration measuring device 20, and when the obtained concentration information is lower than a certain value, calculate the required compensation amount, and provide the replenishing liquid containing the same component as the key component to the production. In the machine 10, the concentration of key components in the chemical solution is compensated. In one embodiment, the compensating device 30 delivers the replenishing liquid to the outer tank 12 and then to the production machine 10 via the transfer line 54. In another embodiment, the compensating device 30 can also deliver the replenishing liquid directly to the production machine 10 (not shown). In still another embodiment, the compensating device 30 first delivers the replenishing liquid directly through the delivery line 54 to the production machine 10 (not shown).
在一具體示範實施例中，化學溶液例如是去光阻液，去光阻液的組成例如是包括羥氨、單乙醇胺、異丙醇胺以及水等，譬如是杜邦公司生產的商品EKC，關鍵成分包括水。當去光阻液中的水含量隨著時間消耗或揮發而不足時，去光阻液中其他成分的濃度相對過高，將會導致製程條件改變，製程容許度變小的問題。濃度測定裝置20可以用來測量去光阻液中的水含量，例如是美商Jetalon生產之濃度計。補償裝置30所提供之補充液包括水或是EKC。在一實施例中，補償裝置30所提供的補償液僅有水。所補充的水量，可以使得去光阻液中的水含量達到定值或是定值以上。在一實施例中，光阻液中的水含量的定值為15%；在另一實施例中，水含量的定值為17%；在又一實施例中，水含量的定值為13%。然而，本發明並不以此為限，化學溶液中關鍵成分的濃度定值可以依據實際的需要來設定。In a specific exemplary embodiment, the chemical solution is, for example, a photoresist, and the composition of the photoresist is, for example, hydroxylamine, monoethanolamine, isopropanolamine, and water, such as the commercial EKC produced by DuPont. The ingredients include water. When the water content in the photoresist is insufficient or depleted over time, the concentration of other components in the photoresist is relatively high, which may result in a change in process conditions and a decrease in process tolerance. The concentration determining device 20 can be used to measure the water content in the photoresist removal solution, for example, a concentration meter produced by the American company Jetalon. The replenishing fluid provided by the compensating device 30 includes water or an EKC. In an embodiment, the compensation fluid provided by the compensation device 30 is only water. The amount of water added can cause the water content in the photoresist to reach a fixed value or a fixed value. In one embodiment, the water content of the photoresist is set to 15%; in another embodiment, the water content is set to 17%; in yet another embodiment, the water content is set to 13%. %. However, the present invention is not limited thereto, and the concentration setting of key components in the chemical solution can be set according to actual needs.
在另一具體示範實施例中，化學溶液可以是含有NH4 OH及H2 O2 的清洗液，例如SCl清洗液。SCl清洗液之組成為NH4 OH: H2 O2 : H2 O=1:1:5清洗液，關鍵成分包括NH4 OH或/及H2 O2 。當SCl清洗液中的NH4 OH或H2 O2 隨著時間消耗以致SCl清洗液中的NH4 OH或H2 O2 濃度不足時，將會造成製程條件改變，而導致製程效率不彰的問題。濃度測定裝置20可以用來測量SCl清洗液中的NH4 OH或H2 O2 含量，濃度測定裝置20例如是美商Jetalon生產之濃度計。補償裝置30所提供之補充液中具有NH4 OH或H2 O2 或其二者。也就是補償裝置30所提供的補償液可以是僅有NH4 OH，或是NH4 OH，或是高濃度的NH4 OH及H2 O2 )水溶液。所補充的NH4 OH或/及H2 O2 量，可以使得SCl清洗液的NH4 OH或/及H2 O2 含量達到定值或是定值以上。在一實施例中，NH4 OH含量的定值為13.5%及H2 O2 含量的定值為13.5%。然而，本發明並不以此為限，化學溶液中關鍵成分的濃度定值可以依據實際的需要來設定。In another specific exemplary embodiment, the chemical solution may be a cleaning solution containing NH 4 OH and H 2 O 2 , such as a SCl cleaning solution. The composition of the SCl cleaning solution is NH 4 OH: H 2 O 2 : H 2 O = 1:1:5 cleaning solution, and the key components include NH 4 OH or/and H 2 O 2 . When the NH 4 OH or H 2 O 2 in the SCl cleaning solution is consumed over time so that the concentration of NH 4 OH or H 2 O 2 in the SCl cleaning solution is insufficient, the process conditions will be changed, resulting in inefficient process. problem. The concentration determining device 20 can be used to measure the NH 4 OH or H 2 O 2 content in the SCl cleaning solution, and the concentration determining device 20 is, for example, a concentration meter produced by the American company Jetalon. The replenishing liquid provided by the compensating device 30 has NH 4 OH or H 2 O 2 or both. That is, the compensation liquid provided by the compensation device 30 may be only NH 4 OH, or NH 4 OH, or a high concentration of NH 4 OH and H 2 O 2 ) aqueous solution. The amount of NH 4 OH or / and H 2 O 2 added can make the NH 4 OH or / and H 2 O 2 content of the SCl cleaning solution reach a fixed value or a fixed value. In one embodiment, the NH 4 OH content is set to 13.5% and the H 2 O 2 content is set to 13.5%. However, the present invention is not limited thereto, and the concentration setting of key components in the chemical solution can be set according to actual needs.
本發明實施例之清洗製程，是以化學溶液處理晶圓2的製程中或製程後，測定化學溶液中至少一關鍵成分的濃度，當關鍵成分的濃度低於一定值時，添加一補充液，此補充液含有與關鍵成分相同的成分，以使得化學溶液中的關鍵成分濃度達到定值或定值以上。重複前述測定以及添加補充液之步驟數次之後，再更新化學溶液。In the cleaning process of the embodiment of the present invention, the concentration of at least one key component in the chemical solution is determined during or after the process of processing the wafer 2 by the chemical solution, and when the concentration of the key component is lower than a certain value, a supplemental solution is added. This replenisher contains the same ingredients as the key ingredients so that the concentration of key ingredients in the chemical solution reaches a fixed value or above. After repeating the foregoing measurement and the steps of adding the replenishing solution several times, the chemical solution is renewed.
綜上所述，本發明實施例係利用濃度控制裝置以及補償裝置與生產機台形成閉迴路控制系統，利用添加關鍵成分的方式，補償化學溶液中關鍵成分的濃度，可使機台之化學溶液的組成保持穩定，維持製程的穩定性，提升製程的容許度，化學溶液更新的時間可達2倍以上，不僅可以降低化學溶液的使用量，達到環保之目的，還可減少製程的成本。In summary, the embodiment of the present invention uses a concentration control device and a compensation device to form a closed loop control system with a production machine, and compensates the concentration of key components in the chemical solution by adding key components, so that the chemical solution of the machine can be made. The composition remains stable, maintains the stability of the process, increases the tolerance of the process, and the chemical solution renewal time can be more than 2 times, which can not only reduce the amount of chemical solution used, but also achieve the purpose of environmental protection and reduce the cost of the process.
雖然本發明已以示範實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been described above by way of example embodiments, it is not intended to limit the invention, and it is to be understood by those of ordinary skill in the art that the invention may be modified and modified without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
2．．．晶圓2. . . Wafer
10．．．生產機台10. . . Production machine
12．．．處理槽12. . . Processing tank
20．．．濃度測定裝置20. . . Concentration measuring device
30．．．補償裝置30. . . Compensation device
40．．．過濾裝置40. . . filter
50．．．回流裝置50. . . Reflow device
52．．．外槽52. . . Outer slot
54．．．輸送管路54. . . Conveying line
56．．．動力裝置56. . . powerplant
60．．．溫度控制器60. . . Temperature Controller
100．．．製程系統100. . . Process system
圖1為依照本發明實施例所繪示之一種製程系統的示意圖。FIG. 1 is a schematic diagram of a process system according to an embodiment of the invention.
2．．．晶圓2. . . Wafer
10．．．生產機台10. . . Production machine
12．．．處理槽12. . . Processing tank
20．．．濃度測定裝置20. . . Concentration measuring device
30．．．補償裝置30. . . Compensation device
40．．．過濾裝置40. . . filter
50．．．回流裝置50. . . Reflow device
52．．．外槽52. . . Outer slot
54．．．輸送管路54. . . Conveying line
56．．．動力裝置56. . . powerplant
60．．．溫度控制器60. . . Temperature Controller
100．．．製程系統100. . . Process system
Claims (14)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099125383A TWI485757B (en) | 2010-07-30 | 2010-07-30 | Process system and cleaning process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099125383A TWI485757B (en) | 2010-07-30 | 2010-07-30 | Process system and cleaning process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201205652A TW201205652A (en) | 2012-02-01 |
| TWI485757B true TWI485757B (en) | 2015-05-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099125383A TWI485757B (en) | 2010-07-30 | 2010-07-30 | Process system and cleaning process |
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| Country | Link |
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| TW (1) | TWI485757B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10780461B2 (en) * | 2015-05-15 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd | Methods for processing substrate in semiconductor fabrication |
| CN113445116A (en) * | 2020-03-24 | 2021-09-28 | 鸿富锦精密电子（成都）有限公司 | Bath solution compensation analysis method and device and computer readable storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200303581A (en) * | 2002-02-28 | 2003-09-01 | Tech Ltd A | Method and apparatus for cleaning and drying semiconductor wafer |
| TWI233631B (en) * | 2001-10-08 | 2005-06-01 | Advanced Tech Materials | Systems and processes for real-time component monitoring and replenishment in multicomponent fluids |
| TW200911397A (en) * | 2007-06-15 | 2009-03-16 | Tokyo Electron Ltd | Substrate cleaning method and substrate cleaning apparatus |
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2010
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI233631B (en) * | 2001-10-08 | 2005-06-01 | Advanced Tech Materials | Systems and processes for real-time component monitoring and replenishment in multicomponent fluids |
| TW200303581A (en) * | 2002-02-28 | 2003-09-01 | Tech Ltd A | Method and apparatus for cleaning and drying semiconductor wafer |
| TW200911397A (en) * | 2007-06-15 | 2009-03-16 | Tokyo Electron Ltd | Substrate cleaning method and substrate cleaning apparatus |
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| TW201205652A (en) | 2012-02-01 |
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