TW202012319A - System for producing washing water for electronic components, and operating method for system for producing washing water for electronic components - Google Patents
System for producing washing water for electronic components, and operating method for system for producing washing water for electronic components Download PDFInfo
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- TW202012319A TW202012319A TW108126690A TW108126690A TW202012319A TW 202012319 A TW202012319 A TW 202012319A TW 108126690 A TW108126690 A TW 108126690A TW 108126690 A TW108126690 A TW 108126690A TW 202012319 A TW202012319 A TW 202012319A
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 393
- 238000005406 washing Methods 0.000 title claims abstract description 199
- 238000011017 operating method Methods 0.000 title claims description 3
- 238000012546 transfer Methods 0.000 claims abstract description 121
- 239000000126 substance Substances 0.000 claims abstract description 69
- 238000003860 storage Methods 0.000 claims abstract description 67
- 230000000704 physical effect Effects 0.000 claims abstract description 40
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims description 204
- 238000004519 manufacturing process Methods 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 67
- 238000005259 measurement Methods 0.000 claims description 11
- 238000010979 pH adjustment Methods 0.000 claims 1
- 239000002699 waste material Substances 0.000 abstract description 42
- 238000002360 preparation method Methods 0.000 abstract description 27
- 239000012530 fluid Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 90
- 239000007788 liquid Substances 0.000 description 48
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 40
- 229910021642 ultra pure water Inorganic materials 0.000 description 30
- 239000012498 ultrapure water Substances 0.000 description 30
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 26
- 239000001257 hydrogen Substances 0.000 description 26
- 229910052739 hydrogen Inorganic materials 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 24
- 229910021529 ammonia Inorganic materials 0.000 description 20
- 239000007789 gas Substances 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 230000033116 oxidation-reduction process Effects 0.000 description 9
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000013589 supplement Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/68—Treatment of water, waste water, or sewage by addition of specified substances, e.g. trace elements, for ameliorating potable water
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Hydrology & Water Resources (AREA)
- Environmental & Geological Engineering (AREA)
- Water Supply & Treatment (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本發明是有關於一種於半導體、液晶、有機EL等電子零件的製造步驟中所使用的電子零件用清洗水製造系統及電子零件用清洗水製造系統的運轉方法。The present invention relates to an operating method of a washing water manufacturing system for electronic parts and a washing water manufacturing system for electronic parts used in manufacturing steps of electronic parts such as semiconductors, liquid crystals, and organic EL.
於半導體、液晶、有機EL等電子零件的製造步驟中,用以去除附著於作為半導體基板的材料的矽晶圓或平板顯示器用的玻璃基板等上的微粒或有機物等的清洗極其重要。作為矽晶圓等的清洗方法,先前使用於作為原料水的超純水中溶解有氨等導電性賦予物質或過氧化氫等氧化還原電位調整物質或氫氣等的溶解水。例如,於專利文獻1中揭示一種製造裝置,其具備於密閉系統中使氫溶解於純水或超純水中的氫溶解裝置,使用藉由該裝置而獲得的氫溶解水進行半導體元件的清洗、浸漬。另外,於專利文獻2中揭示一種導電性水溶液製造裝置,其於製造超純水中溶解有二氧化碳或氨等導電性賦予物質的導電性水溶液時,可製造濃度穩定的導電性水溶液。In the manufacturing process of electronic components such as semiconductors, liquid crystals, organic ELs, etc., it is extremely important to clean particles or organic substances that are attached to a silicon wafer that is a material of a semiconductor substrate, a glass substrate for flat panel displays, or the like. As a cleaning method for silicon wafers and the like, in the ultrapure water used as the raw material water, a conductivity-imparting substance such as ammonia, a redox potential adjusting substance such as hydrogen peroxide, or dissolved water such as hydrogen gas is dissolved. For example, Patent Document 1 discloses a manufacturing apparatus including a hydrogen dissolving device that dissolves hydrogen in pure water or ultrapure water in a closed system, and uses the hydrogen dissolving water obtained by the device to clean a semiconductor element 、Immersion. In addition,
經製造的清洗水自清洗水的製造裝置被移送至矽晶圓等的製造工廠的多個使用點,並用於晶圓處理。然而,如圖3所示的先前的電子零件用清洗水的製造裝置中,通常而言即便於未進行晶圓處理時亦製造清洗水並持續移送至使用點。因此,存在如下問題:添加的導電性賦予物質等大量被消耗,且產生大量廢液。The manufactured washing water is transferred from the washing water manufacturing device to multiple use points in a manufacturing plant such as silicon wafers, and is used for wafer processing. However, in the conventional apparatus for manufacturing cleaning water for electronic parts as shown in FIG. 3, generally, even when wafer processing is not performed, the cleaning water is manufactured and continuously transferred to the point of use. Therefore, there is a problem that the added conductivity-imparting substance and the like are consumed in large amounts and a large amount of waste liquid is generated.
為了解決所述問題,考慮僅於進行晶圓處理時製造清洗水的方法。然而,於僅於進行晶圓處理時製造清洗水並移送至使用點的情況下,使清洗水於設定條件下穩定為止需要幾分鐘至幾十分鐘的時間,因此於此期間移送至使用點的清洗水全部被廢棄,即便並非為未進行晶圓處理時亦將清洗水持續移送至使用點的情況,亦會產生大量的廢液。In order to solve the above problem, a method of manufacturing cleaning water only when performing wafer processing is considered. However, in the case where the cleaning water is manufactured and transferred to the point of use only during wafer processing, it takes a few minutes to several tens of minutes to stabilize the cleaning water under the set conditions, so during this period, it is transferred to the point of use All the cleaning water is discarded. Even if it is not the case that the cleaning water is continuously transferred to the point of use when the wafer is not processed, a large amount of waste liquid will be generated.
另一方面,亦提出一種如圖4所示的清洗水的製造裝置,其將未用於晶圓處理的清洗水暫時貯存於罐中,對該罐製造並補給用於晶圓處理而減少的部分的清洗水。然而,於此種裝置中,返送至罐中的清洗水的溶液濃度大多與設定的溶液濃度不同,若向貯存有經返送的清洗水的罐補給新製造的清洗水,則存在溶液濃度的偏差變大的問題,即溶液濃度的控制性差的問題。因此,例如需要在罐中設置用以混合的混合機等,清洗水的製造成本增大。 [現有技術文獻] [專利文獻]On the other hand, a device for manufacturing cleaning water as shown in FIG. 4 is also proposed, which temporarily stores the cleaning water not used for wafer processing in a tank, and manufactures and replenishes the tank for use in wafer processing. Part of the washing water. However, in such devices, the solution concentration of the washing water returned to the tank is often different from the set solution concentration, and if the newly-made washing water is replenished to the tank storing the returned washing water, there is a deviation in the solution concentration The problem of becoming larger is the problem of poor controllability of the solution concentration. Therefore, for example, it is necessary to provide a mixer for mixing in the tank, and the manufacturing cost of washing water increases. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利特開2003-136077號公報 [專利文獻2]日本專利特開2016-076590號公報[Patent Document 1] Japanese Patent Laid-Open No. 2003-136077 [Patent Document 2] Japanese Patent Laid-Open No. 2016-076590
[發明所欲解決之課題] 本發明是基於所述情況而成者,其目的在於提供一種可大幅抑制所製造的清洗水的廢液量,同時亦可縮短於使用點使用的清洗水的準備時間(清洗水於設定條件下穩定為止的時間)的電子零件用清洗水製造系統及電子零件用清洗水製造系統的運轉方法。[Problems to be solved by the invention] The present invention was made based on the above circumstances, and its purpose is to provide a method that can greatly reduce the amount of waste liquid of the produced washing water, and can also shorten the preparation time of the washing water used at the point of use (the washing water is under the set conditions (Time until stability) Operation method of electronic parts cleaning water manufacturing system and electronic parts cleaning water manufacturing system.
[解決課題之手段] 為了解決所述課題,第一,本發明提供一種電子零件用清洗水製造系統,包括:移送管線,連通原料水供給部與使用點;返送管線,於位於所述移送管線的下游側的分支點分支,於位於上游側的合流點合流;功能性物質添加裝置,於所述移送管線中與所述合流點的上游側連接,於向所述移送管線供給的原料水中添加功能性物質來製造清洗水;物性測定裝置,於所述移送管線中與所述合流點的下游側連接,測定所述清洗水的物性;貯存罐,設置於所述返送管線,並能夠貯存所述清洗水;以及控制部件,控制所述清洗水的流通路徑(發明1)。[Means to solve the problem] In order to solve the above problems, first, the present invention provides a cleaning water manufacturing system for electronic parts, including: a transfer line that connects the raw water supply unit and the point of use; a return line at a branch point located on the downstream side of the transfer line Branch, merge at the confluence point located on the upstream side; a functional substance addition device, connected to the upstream side of the confluence point in the transfer line, and add a functional substance to the raw material water supplied to the transfer line to manufacture cleaning Water; physical property measuring device, connected to the downstream side of the confluence point in the transfer line, to measure the physical properties of the washing water; a storage tank, provided in the return line, and capable of storing the washing water; and control A component that controls the flow path of the washing water (Invention 1).
根據所述發明(發明1),無論於使用點有無清洗水的使用,均將所製造的清洗水持續移送至使用點,同時可藉由控制部件,於使用點未使用清洗水的情況下,控制成將清洗水經由返送管線而暫時貯存於貯存罐中,於使用點使用清洗水的情況下,控制成將貯存於貯存罐中的清洗水供給至移送管線。藉此可大幅抑制所製造的清洗水的廢液量,並且可縮短於使用點使用的清洗水的準備時間(清洗水於設定條件下穩定為止的時間)。According to the above invention (Invention 1), regardless of whether the washing water is used at the point of use, the manufactured washing water is continuously transferred to the point of use, and at the same time, by using a control member, when the water is not used at the point of use, It is controlled to temporarily store the washing water in the storage tank via the return line, and when the washing water is used at the point of use, it is controlled to supply the washing water stored in the storage tank to the transfer line. This can greatly reduce the amount of waste liquid of the produced washing water, and can shorten the preparation time of the washing water used at the point of use (the time until the washing water is stable under the set conditions).
於所述發明(發明1)中,較佳為所述控制部件於判斷為於所述使用點未使用清洗水的情況下,控制成將所述清洗水經由所述返送管線而貯存於所述貯存罐中,所述控制部件於判斷為於所述使用點使用清洗水的情況下,控制成將貯存於所述貯存罐中的所述清洗水供給至所述移送管線(發明2)。In the invention (Invention 1), it is preferable that the control member controls to store the washing water in the return line through the return line when it is determined that the washing water is not used at the point of use In the storage tank, when it is determined that the washing water is used at the point of use, the control unit controls to supply the washing water stored in the storage tank to the transfer line (Invention 2).
根據所述發明(發明2),可大幅抑制所製造的清洗水的廢液量,此外可於移送管線上混合自貯存罐向移送管線供給的清洗水與於移送管線上新製造的清洗水後定量地測定其物性,因此始終可對使用點供給具有一定的物性值的清洗水。According to the above invention (Invention 2), the amount of waste liquid of the produced washing water can be greatly suppressed, and the washing water supplied from the storage tank to the transferring line and the newly-made washing water on the transferring line can be mixed on the transferring line Quantitatively measure its physical properties, so it is always possible to supply washing water with a certain physical property value to the point of use.
於所述發明(發明1、發明2)中,較佳為進而包括:第一流量計,於所述移送管線中與所述合流點的上游側連接;以及第二流量計,於所述返送管線中與所述貯存罐的下游側連接,所述控制部件於判斷為於所述使用點使用清洗水的情況下,基於所述第一流量計的測定值及所述第二流量計的測定值來控制所述移送管線上製造的清洗水的量(發明3)。In the above invention (Invention 1 and Invention 2), it is preferable to further include: a first flow meter connected to the upstream side of the confluence point in the transfer line; and a second flow meter connected to the return flow The pipeline is connected to the downstream side of the storage tank, and when the control unit determines that the washing water is used at the point of use, based on the measurement value of the first flowmeter and the measurement of the second flowmeter Value to control the amount of wash water produced on the transfer line (Invention 3).
根據所述發明(發明3),藉由控制部件,於自貯存罐向移送管線供給的清洗水與於移送管線上新製造的清洗水的合計量相對於使用點的所需量而不足的情況下,可以補充該不足部分的方式控制於移送管線上製造的清洗水的量,因此始終可對使用點供給一定的流量的清洗水。According to the above invention (Invention 3), the total amount of the washing water supplied from the storage tank to the transfer line and the newly-made washing water on the transfer line is insufficient with respect to the required amount at the point of use by the control means Next, the amount of cleaning water produced on the transfer line can be controlled in such a way as to supplement this deficiency, so that a constant flow of cleaning water can always be supplied to the point of use.
於所述發明(發明1-發明3)中,較佳為所述功能性物質與所述物性測定裝置的組合為選自由導電性賦予物質與導電率計、氧化還原電位調整物質與氧化還原電位(Oxidation-Reduction Potential,ORP)計、pH調整物質與pH計、氣體與氣體濃度計所組成的群組中的一種或兩種以上(發明4)。In the above invention (Invention 1 to Invention 3), it is preferable that the combination of the functional substance and the physical property measurement device is selected from the group consisting of a conductivity-imparting substance and a conductivity meter, a redox potential adjusting substance, and a redox potential One or more than two (Oxidation-Reduction Potential, ORP) meters, pH adjusting substances and pH meters, and gas and gas concentration meters (Invention 4).
第二,本發明提供一種電子零件用清洗水製造系統的運轉方法,其中所述電子零件用清洗水製造系統包括:移送管線,連通原料水供給部與使用點;返送管線,於位於所述移送管線的下游側的分支點分支,於位於上游側的合流點合流;功能性物質添加裝置,於所述移送管線中與所述合流點的上游側連接,於向所述移送管線供給的原料水中添加功能性物質來製造清洗水;物性測定裝置,於所述移送管線中與所述合流點的下游側連接,測定所述清洗水的物性;貯存罐,設置於所述返送管線,並能夠貯存所述清洗水;以及控制部件,控制所述清洗水的流通路徑,所述電子零件用清洗水製造系統的運轉方法的特徵在於:無論於所述使用點有無清洗水的使用,均將所述清洗水經由所述移送管線而移送至所述使用點(發明5)。Second, the present invention provides a method for operating a cleaning water manufacturing system for electronic parts, wherein the cleaning water manufacturing system for electronic parts includes: a transfer line that connects the raw water supply unit and the point of use; a return line is located at the transfer The branch point on the downstream side of the pipeline is branched and merged at the merge point on the upstream side; a functional substance addition device is connected to the upstream side of the merged point in the transfer line, in the raw material water supplied to the transfer line Add functional substances to produce washing water; a physical property measuring device connected to the downstream side of the confluence point in the transfer line to measure the physical properties of the cleaning water; a storage tank provided in the return line and capable of storing The washing water; and a control member that controls the flow path of the washing water, and the method of operating the washing water manufacturing system for electronic parts is characterized in that the washing water is used regardless of whether the washing water is used at the point of use Washing water is transferred to the point of use via the transfer line (Invention 5).
根據所述發明(發明5),無論於使用點有無清洗水的使用,均將所製造的清洗水持續移送至使用點,同時可藉由控制部件,於使用點未使用清洗水的情況下,控制成將清洗水經由返送管線而暫時貯存於貯存罐中,於使用點使用清洗水的情況下,控制成將貯存於貯存罐中的清洗水供給至移送管線。藉此可大幅抑制所製造的清洗水的廢液量,並且可縮短於使用點使用的清洗水的準備時間(清洗水於設定條件下穩定為止的時間)。According to the invention (Invention 5), regardless of whether the washing water is used at the point of use, the manufactured washing water is continuously transferred to the point of use, and at the same time, by using a control member, when the water is not used at the point of use, It is controlled to temporarily store the washing water in the storage tank via the return line, and when the washing water is used at the point of use, it is controlled to supply the washing water stored in the storage tank to the transfer line. This can greatly reduce the amount of waste liquid of the produced washing water, and can shorten the preparation time of the washing water used at the point of use (the time until the washing water is stable under the set conditions).
於所述發明(發明5)中,較佳為所述控制部件於判斷為於所述使用點未使用清洗水的情況下,控制成將所述清洗水經由所述返送管線而貯存於所述貯存罐中,所述控制部件於判斷為於所述使用點使用清洗水的情況下,控制成將貯存於所述貯存罐中的所述清洗水供給至所述移送管線(發明6)。In the above invention (Invention 5), it is preferable that the control member controls the washing water to be stored in the washing water via the return line when it is determined that the washing water is not used at the point of use In the storage tank, when it is determined that the washing water is used at the point of use, the control unit controls to supply the washing water stored in the storage tank to the transfer line (Invention 6).
根據所述發明(發明6),可大幅抑制所製造的清洗水的廢液量,此外可於移送管線上混合自貯存罐向移送管線供給的清洗水與於移送管線上新製造的清洗水後定量地測定其物性,因此始終可對使用點供給具有一定的物性值的清洗水。According to the above invention (Invention 6), the amount of waste liquid of the produced washing water can be greatly suppressed, and the washing water supplied from the storage tank to the transferring line and the newly-made washing water on the transferring line can be mixed on the transferring line Quantitatively measure its physical properties, so it is always possible to supply washing water with a certain physical property value to the point of use.
於所述發明(發明5、發明6)中,較佳為所述電子零件用清洗水製造系統進而包括:第一流量計,於所述移送管線中與所述合流點的上游側連接;以及第二流量計,於所述返送管線中與所述貯存罐的下游側連接,所述控制部件於判斷為於所述使用點使用清洗水的情況下,基於所述第一流量計的測定值及所述第二流量計的測定值來控制所述移送管線上製造的清洗水的量(發明7)。In the above invention (
根據所述發明(發明6),藉由控制部件,於自貯存罐向移送管線供給的清洗水與於移送管線上新製造的清洗水的合計量相對於使用點的所需量而不足的情況下,可以補充該不足部分的方式控制於移送管線上製造的清洗水的量,因此始終可對使用點供給一定的流量的清洗水。According to the above invention (Invention 6), the total amount of the cleaning water supplied from the storage tank to the transfer line and the newly-made cleaning water on the transfer line is insufficient with respect to the required amount at the point of use by the control means Next, the amount of cleaning water produced on the transfer line can be controlled in such a way as to supplement this deficiency, so that a constant flow of cleaning water can always be supplied to the point of use.
於所述發明(發明5-發明7)中,較佳為所述功能性物質與所述物性測定裝置的組合為選自由導電性賦予物質與導電率計、氧化還原電位調整物質與ORP計、pH調整物質與pH計、氣體與氣體濃度計所組成的群組中的一種或兩種以上(發明8)。In the above invention (Invention 5-Invention 7), it is preferable that the combination of the functional substance and the physical property measurement device is selected from the group consisting of a conductivity-imparting substance and a conductivity meter, a redox potential adjusting substance and an ORP meter, One or two or more of the group consisting of a pH adjusting substance, a pH meter, and a gas and a gas concentration meter (Invention 8).
[發明的效果] 根據本發明的電子零件用清洗水製造系統及電子零件用清洗水製造系統的運轉方法,無論於使用點有無清洗水的使用,均將所製造的清洗水持續移送至使用點,同時亦可藉由控制部件,於使用點未使用清洗水的情況下,控制成將清洗水經由返送管線而暫時貯存於貯存罐中,於使用點使用清洗水的情況下,控制成將貯存於貯存罐中的清洗水供給至移送管線。藉此可大幅抑制所製造的清洗水的廢液量,並且可縮短於使用點使用的清洗水的準備時間(清洗水於設定條件下穩定為止的時間)。[Effect of invention] According to the operation method of the washing water manufacturing system for electronic parts and the washing water manufacturing system for electronic parts of the present invention, regardless of whether the washing water is used at the point of use, the manufactured washing water is continuously transferred to the point of use, and can also be borrowed When the washing water is not used at the point of use, it is controlled by the control unit to temporarily store the washing water in the storage tank via the return line, and when the washing water is used at the point of use, it is controlled to be stored in the storage tank. Wash water is supplied to the transfer line. This can greatly reduce the amount of waste liquid of the produced washing water, and can shorten the preparation time of the washing water used at the point of use (the time until the washing water is stable under the set conditions).
以下,參照圖1及圖2(a)~圖2(c)對本發明的電子零件用清洗水製造系統及該系統的運轉方法的實施形態進行說明。再者,於圖2(a)~圖2(c)中,為了簡化圖式而省略一部分符號的表示。以下說明的實施形態是用以容易理解本發明,並非對本發明進行任何限定。Hereinafter, an embodiment of a washing water manufacturing system for electronic parts of the present invention and an operation method of the system will be described with reference to FIGS. 1 and 2(a) to 2(c). In addition, in FIGS. 2( a) to 2 (c ), in order to simplify the drawing, some symbols are omitted. The embodiments described below are for easy understanding of the present invention and do not limit the present invention in any way.
〔電子零件用清洗水製造系統〕
圖1是表示本發明的一實施形態的電子零件用清洗水製造系統100的示意性說明圖。圖1所示的電子零件用清洗水製造系統100包括:移送管線L1,連通原料水供給部與使用點;以及返送管線L2,於位於移送管線L1的下游側的分支點8經由切換三通閥81而分支,於位於上游側的合流點9合流。電子零件用清洗水製造系統100如圖2(a)所示,無論於使用點有無清洗水的使用,均將清洗水經由移送管線L1而持續移送至使用點。於移送管線L1上沿著流通方向依序設置有第一流量計1、功能性物質添加裝置2、物性測定裝置3,於返送管線L2上沿著流通方向依序設置有貯存罐4、第二流量計5、供水泵6。另外,電子零件用清洗水製造系統100包括控制清洗水的流通路徑的控制部件7(未圖示)。再者,自原料水供給部向移送管線L1的原料水的供給量可藉由移送管線L1中設置於較第一流量計1而言更靠上游側的第一開關閥10進行調整。〔Cleaning water manufacturing system for electronic parts〕
FIG. 1 is a schematic explanatory diagram showing a cleaning
(原料水) 作為原料水,較佳為適於清洗半導體、液晶、有機EL等電子零件的水質,例如可較佳地使用將雜質去除至極限為止的超純水或純水。關於本實施形態,作為原料水,使用超純水W。(Raw water) The raw material water is preferably a water quality suitable for washing electronic parts such as semiconductors, liquid crystals, and organic EL. For example, ultrapure water or pure water that removes impurities to the limit can be preferably used. In this embodiment, ultrapure water W is used as raw material water.
〈功能性物質添加裝置〉
功能性物質添加裝置2是於向移送管線L1供給的超純水W中添加功能性物質來製造清洗水W1者,於移送管線L1上經由第二開關閥11而與合流點9的上游側連接。再者,功能性物質較佳為選自由導電性賦予物質、氧化還原電位調整物質、pH調整物質、氣體所組成的群組中的一種或兩種以上。<Functional substance addition device>
The functional
作為所述導電性賦予物質,可列舉氨或碳酸,但較佳為使用安全性較高的氨。作為所述氧化還原電位調整物質,可列舉過氧化氫水等液體或臭氧氣體等氣體,就氧量的控制比較容易而言,較佳為使用過氧化氫水。作為所述pH調整物質,可列舉氨或碳酸,但較佳為使用比較容易調整的氨。作為所述氣體,可列舉氫氣或氮氣、碳酸氣體等,但較佳為使用安全性較高的氫氣。Examples of the conductivity-imparting substance include ammonia and carbonic acid, but it is preferable to use ammonia with high safety. Examples of the oxidation-reduction potential adjusting substance include liquids such as hydrogen peroxide water and gases such as ozone gas. For easier control of the amount of oxygen, it is preferable to use hydrogen peroxide water. Examples of the pH adjusting substance include ammonia and carbonic acid, but it is preferable to use ammonia that is relatively easy to adjust. Examples of the gas include hydrogen gas, nitrogen gas, and carbonic acid gas. However, it is preferable to use hydrogen gas with high safety.
作為功能性物質添加裝置2,只要可於超純水W中添加功能性物質來製造清洗水W1即可,其方法並無特別限定。例如於功能性物質為液體的情況下,可採用使用泵添加至在移送管線中流通的超純水W中的方法等,於功能性物質為氣體的情況下,可採用對在移送管線中流通的超純水W直接起泡的方法等。As the functional
〈物性測定裝置〉
物性測定裝置3是對所製造的清洗水W1的物性進行定量測定者,於移送管線L1中與合流點9的下游側連接。藉由物性測定裝置3與合流點9的下游側連接,可於移送管線L1上混合自貯存罐向移送管線供給的清洗水W1'與於移送管線上新製造的清洗水W1''後定量地測定其物性,因此始終可對使用點供給具有一定的物性值的清洗水。<Physical Properties Measuring Device>
The physical property measuring
物性測定裝置3只要可定量地測定於移送管線L1中流通的清洗水W1的物性即可,因此只要與由功能性物質添加裝置2添加的功能性物質一致來採用即可。即,於添加的功能性物質為導電性賦予物質的情況下,採用導電率計作為物性測定裝置3,於為氧化還原電位調整物質的情況下,只要採用ORP計即可,於為pH調整物質的情況下,只要採用pH計即可,於為氣體的情況下,只要採用氣體濃度計即可。作為該些導電率計、ORP計、pH計、氣體濃度計,只要可分別達成目的即可,可並無特別限定地使用例如市售者。The physical property measuring
〈貯存罐〉
貯存罐4構成為能夠貯存藉由返送管線L2而返送的清洗水W1。貯存於貯存罐4中的清洗水W1'向移送管線L1的供給量可藉由在返送管線L2中設置於較貯存罐4而言更靠下游側的第三開關閥12進行調整。貯存罐4只要具備能夠暫時貯存於使用點未使用而被返送的清洗水W1'的容量即可,其構成並無特別限定。<Storage tank>
The
〈流量計〉
第一流量計1是測定於移送管線L1中流通的超純水W的流量,即電子零件用清洗水製造系統100的入口流量者,設置於合流點9的上游側。藉由將第一流量計1設置於合流點9的上游側,基於第一流量計1的測定值,可掌握於移送管線L1製造的清洗水W1(或清洗水W1'')的流量,即不包含自貯存罐4向移送管線L1供給的清洗水W1'的清洗水W1(或清洗水W1'')的流量。再者,於本實施形態中,第一流量計1設置於功能性物質添加裝置2的上游側。<Flowmeter>
The first flow meter 1 measures the flow rate of the ultrapure water W flowing through the transfer line L1, that is, the inlet flow rate of the electronic component cleaning
第二流量計5是測定自貯存罐4供給至移送管線L1的清洗水W1'的流量者。第二流量計5只要可測定自貯存罐4供給至移送管線L1的清洗水W1'的流量即可,於本實施形態中,於貯存罐4的下游側的返送管線L2中設置於第三開關閥12與供水泵6之間。The
作為第一流量計1及第二流量計5,可並無特別限定地使用例如市售者。As the first flow meter 1 and the
〈控制部件〉
控制部件7(未圖示)是控制清洗水W1的流通路徑者。於本實施形態中,控制部件7於判斷為於使用點未使用清洗水的情況(圖2(b)的情況)下,控制成藉由對切換三通閥81進行切換而將清洗水W1經由返送管線L2暫時貯存於貯存罐4中,於判斷為於使用點使用清洗水的情況(圖2(c)的情況)下,控制成藉由驅動供水泵6而將貯存於貯存罐4中的清洗水W1'供給至移送管線L1。再者,此時的向移送管線L1的供給量可藉由利用控制部件7控制第三開關閥12的開關進行調整。如此控制部件7於在使用點未使用清洗水的情況(圖2(b)的情況)下,可控制成藉由返送管線L2對清洗水W1進行返送,因此將所製造的清洗水W1經由移送管線L1而持續移送至使用點,同時亦可防止產生大量的廢液。<Control Components>
The control member 7 (not shown) controls the flow path of the washing water W1. In this embodiment, the control member 7 controls to switch the washing water W1 by switching the switching three-
另外,於本實施形態中,控制部件7基於第一流量計1的測定值及第二流量計5的測定值,於自貯存罐4向移送管線L1供給的清洗水W1'與於移送管線L1上新製造的清洗水W1''的合計量相對於使用點的所需量而不足的情況下,可以補充該不足部分的方式控制於移送管線L1上製造的清洗水W1''的量。藉此始終可對使用點供給一定的流量的清洗水W1。In addition, in the present embodiment, based on the measured value of the first flow meter 1 and the measured value of the
作為控制部件7,只要至少可進行所述控制,則並無特別限定,例如可藉由手動進行,亦可利用公知的電腦等進行。The control member 7 is not particularly limited as long as at least the above control can be performed, for example, it may be performed manually, or may be performed using a well-known computer or the like.
〔電子零件用清洗水製造系統的運轉方法〕
其次,參照圖2(a)~圖2(c)對所述的本實施形態的電子零件用清洗水製造系統100的運轉方法進行詳細說明。[Operation method of washing water manufacturing system for electronic parts]
Next, the operation method of the cleaning
首先,對於向移送管線L1供給的原料水W,藉由功能性物質添加裝置2添加功能性物質來製造清洗水W1(功能性物質添加步驟)。其次,藉由在移送管線L1中設置於功能性物質添加裝置2的下游側的物性測定裝置3,對所製造的清洗水W1的物性定量地進行測定(物性測定步驟)。如圖2(a)所示,測定了物性的清洗水W1無論於使用點有無清洗水的使用,均連續地被移送至使用點。First, for the raw material water W supplied to the transfer line L1, the functional
然後,控制部件7於判斷為於使用點未使用清洗水的情況(圖2(b)的情況)下,進行控制以藉由對切換三通閥81進行切換而將所製造的清洗水W1經由返送管線L2貯存於貯存罐4中。此時,被廢棄的僅為已被移送至使用點的清洗水W1,大部分的清洗水W1被返送,因此可防止產生大量的廢液。再者,於使用點未使用清洗水的時間長的情況下,如所述般對切換三通閥81進行切換,並且關閉第一開關閥10及第二開關閥11,藉此經由貯存罐4使清洗水W1進行循環即可。藉此,即便於使用點未使用清洗水的時間長的情況下,亦可防止容量以上的清洗水W1流入貯存罐4中。Then, when it is determined that the washing water is not used at the point of use (in the case of FIG. 2(b)), the control unit 7 controls to switch the manufactured washing water W1 by switching the switching three-
另一方面,控制部件7於判斷為於使用點未使用清洗水的情況(圖2(b)的情況)下,進行控制以藉由驅動供水泵6而將貯存於貯存罐4中的清洗水W1'供給至移送管線L1。此時,控制部件7可藉由控制第三開關閥12的開關來調整向移送管線L1的清洗水W1'的供給量。另外,控制部件7基於第一流量計1的測定值及第二流量計5的測定值,於自貯存罐4向移送管線L1供給的清洗水W1'與於移送管線L1上新製造的清洗水W1''的合計量相對於使用點的所需量而不足的情況下,可以補充該不足部分的方式控制於移送管線L1上製造的清洗水W1''的量。On the other hand, when it is determined that the washing water is not used at the point of use (in the case of FIG. 2(b)), the control unit 7 controls to drive the
如所述般,藉由使電子零件用清洗水製造系統100進行運轉,可大幅抑制所製造的清洗水的廢液量,並且可縮短於使用點使用的清洗水的準備時間(清洗水於設定條件下穩定為止的時間)。而且,於物性測定步驟中,可於移送管線L1上混合自貯存罐4向移送管線L1供給的清洗水W1'與於移送管線L1上新製造的清洗水W1''後定量地測定其物性,因此始終可對使用點供給具有一定的物性值的清洗水。As described above, by operating the cleaning
以上,參照圖式對本發明進行了說明,但本發明並不限定於所述實施形態,只要不脫離其主旨,則能夠進行各種變更。例如,於圖1中將功能性物質添加裝置2表示為一個裝置,但於功能性物質是作為氧化還原電位調整物質的過氧化氫水的情況下,功能性物質添加裝置2亦可由氫供給裝置和與其連結的氫溶解裝置構成。
[實施例]The present invention has been described above with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiments, and various changes can be made as long as they do not deviate from the gist. For example, in FIG. 1, the functional
以下,基於實施例對本發明進一步進行詳細說明,但本發明並不限定於以下的實施例。Hereinafter, the present invention will be further described in detail based on examples, but the present invention is not limited to the following examples.
於以下的實施例1-實施例5中,使用圖1所示的電子零件用清洗水製造系統100來進行電子零件用清洗水的製造。In the following Examples 1 to 5, the cleaning
〔實施例1〕 於向超純水中以導電率成為30 μS/cm的方式添加氨而製造清洗水後,以50 L/min持續移送至使用點。於使用點處的清洗水中斷使用的期間,將未使用的清洗水經由返送管線而貯存於貯存罐中。於使用點處的清洗水恢復使用後,將貯存於貯存罐中的清洗水供給至移送管線。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。[Example 1] After adding ammonia to the ultrapure water so that the conductivity becomes 30 μS/cm to produce washing water, it is continuously transferred to the point of use at 50 L/min. While the use of the cleaning water at the point of use is interrupted, unused cleaning water is stored in the storage tank via the return line. After the cleaning water at the point of use is restored to use, the cleaning water stored in the storage tank is supplied to the transfer line. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量為20 L。清洗水的水質中導電率為30 μS/cm,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, and the amount of waste liquid per hour is 20 L. The conductivity of the cleaning water is 30 μS/cm, and the deviation is within ±10%.
〔實施例2〕 於向超純水中以氧化還原電位成為600 mV的方式添加過氧化氫水而製造清洗水後,以50 L/min持續移送至使用點。於使用點處的清洗水中斷使用的期間,將未使用的清洗水經由返送管線而貯存於貯存罐中。於使用點處的清洗水恢復使用後,將貯存於貯存罐中的清洗水供給至移送管線。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。[Example 2] After adding hydrogen peroxide water to the ultrapure water so that the oxidation-reduction potential becomes 600 mV to produce washing water, it is continuously transferred to the point of use at 50 L/min. While the use of the cleaning water at the point of use is interrupted, unused cleaning water is stored in the storage tank via the return line. After the cleaning water at the point of use is restored to use, the cleaning water stored in the storage tank is supplied to the transfer line. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量為20 L。清洗水的水質中氧化還原電位為600 mV,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, and the amount of waste liquid per hour is 20 L. The redox potential of the cleaning water is 600 mV, and the deviation is within ±10%.
〔實施例3〕 於向超純水中以氫氣濃度成為10 ppm的方式添加氫氣而製造清洗水後,以50 L/min持續移送至使用點。於使用點處的清洗水中斷使用的期間,將未使用的清洗水經由返送管線而貯存於貯存罐中。於使用點處的清洗水恢復使用後,將貯存於貯存罐中的清洗水供給至移送管線。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。[Example 3] After adding hydrogen to ultrapure water so that the hydrogen concentration becomes 10 ppm to produce washing water, it is continuously transferred to the point of use at 50 L/min. While the use of the cleaning water at the point of use is interrupted, unused cleaning water is stored in the storage tank via the return line. After the cleaning water at the point of use is restored to use, the cleaning water stored in the storage tank is supplied to the transfer line. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量為20 L。清洗水的水質中氫氣濃度為10 ppm,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, and the amount of waste liquid per hour is 20 L. The hydrogen concentration in the water quality of the washing water is 10 ppm, and the deviation is within ±10%.
〔實施例4〕 於向超純水中以pH值成為9.0的方式添加氨而製造清洗水後,以50 L/min持續移送至使用點。於使用點處的清洗水中斷使用的期間,將未使用的清洗水經由返送管線而貯存於貯存罐中。於使用點處的清洗水恢復使用後,將貯存於貯存罐中的清洗水供給至移送管線。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。[Example 4] After adding ammonia to the ultrapure water so that the pH value becomes 9.0 to produce washing water, it is continuously transferred to the point of use at 50 L/min. While the use of the cleaning water at the point of use is interrupted, unused cleaning water is stored in the storage tank via the return line. After the cleaning water at the point of use is restored to use, the cleaning water stored in the storage tank is supplied to the transfer line. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量為20 L。清洗水的水質中pH值為9.0,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, and the amount of waste liquid per hour is 20 L. The pH value of the cleaning water is 9.0, and the deviation is within ±10%.
〔實施例5〕 於向超純水中以導電率成為30 μS/cm的方式添加氨、以氧化還原電位成為600 mV的方式添加過氧化氫水、以氫氣濃度成為10 ppm的方式添加氫氣、以pH值成為9.0的方式添加氨而製造清洗水後,以50 L/min持續移送至使用點。於使用點處的清洗水中斷使用的期間,將未使用的清洗水經由返送管線而貯存於貯存罐中。於使用點處的清洗水恢復使用後,將貯存於貯存罐中的清洗水供給至移送管線。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。[Example 5] To ultrapure water, add ammonia with a conductivity of 30 μS/cm, add hydrogen peroxide with a redox potential of 600 mV, add hydrogen with a hydrogen concentration of 10 ppm, and have a pH of 9.0 After adding ammonia to produce washing water, it is continuously transferred to the point of use at 50 L/min. While the use of the cleaning water at the point of use is interrupted, unused cleaning water is stored in the storage tank via the return line. After the cleaning water at the point of use is restored to use, the cleaning water stored in the storage tank is supplied to the transfer line. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量為20 L。清洗水的水質中導電率為30 μS/cm,氧化還原電位為600 mV,氫氣濃度為10 ppm,pH值為9.0,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, and the amount of waste liquid per hour is 20 L. The conductivity of the cleaning water is 30 μS/cm, the oxidation-reduction potential is 600 mV, the hydrogen concentration is 10 ppm, the pH value is 9.0, and the deviation is within ±10%.
於以下的比較例1-比較例10中,使用圖3所示的電子零件用清洗水的製造系統200來進行電子零件用清洗水的製造。電子零件用清洗水的製造系統200包括連通原料水供給部與使用點的移送管線L21,於移送管線L21上沿著流通方向依序設置有流量計21、功能性物質添加裝置22、物性測定裝置23。自原料水供給部向移送管線L21的超純水的供給量可藉由在移送管線L21中設置於較流量計21而言更靠上游側的開關閥24進行調整。功能性物質添加裝置22經由開關閥25而與移送管線L21連接。In the following Comparative Example 1 to Comparative Example 10, the
〔比較例1〕 於向超純水中以導電率成為30 μS/cm的方式添加氨而製造清洗水後,以50 L/min持續移送至使用點。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於使用點處的清洗水中斷使用的期間,亦製造所述清洗液並持續移送至使用點。[Comparative Example 1] After adding ammonia to the ultrapure water so that the conductivity becomes 30 μS/cm to produce washing water, it is continuously transferred to the point of use at 50 L/min. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. During the period when the cleaning water at the point of use is interrupted, the cleaning liquid is also manufactured and continuously transferred to the point of use.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量成為3000 L,出現大量的廢液。清洗水的水質中導電率為30 μS/cm,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, the amount of waste liquid per hour becomes 3000 L, and a large amount of waste liquid appears. The conductivity of the cleaning water is 30 μS/cm, and the deviation is within ±10%.
〔比較例2〕 於向超純水中以氧化還原電位成為600 mV的方式添加過氧化氫水而製造清洗水後,以50 L/min持續移送至使用點。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於使用點處的清洗水中斷使用的期間,亦製造所述清洗液並持續移送至使用點。[Comparative Example 2] After adding hydrogen peroxide water to the ultrapure water so that the oxidation-reduction potential becomes 600 mV to produce washing water, it is continuously transferred to the point of use at 50 L/min. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. During the period when the cleaning water at the point of use is interrupted, the cleaning liquid is also manufactured and continuously transferred to the point of use.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量成為3000 L,出現大量的廢液。清洗水的水質中氧化還原電位為600 mV,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, the amount of waste liquid per hour becomes 3000 L, and a large amount of waste liquid appears. The redox potential of the cleaning water is 600 mV, and the deviation is within ±10%.
〔比較例3〕 於向超純水中以氫氣濃度成為10 ppm的方式添加氫氣而製造清洗水後,以50 L/min持續移送至使用點。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於使用點處的清洗水中斷使用的期間,亦製造所述清洗液並持續移送至使用點。[Comparative Example 3] After adding hydrogen to ultrapure water so that the hydrogen concentration becomes 10 ppm to produce washing water, it is continuously transferred to the point of use at 50 L/min. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. During the period when the cleaning water at the point of use is interrupted, the cleaning liquid is also manufactured and continuously transferred to the point of use.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量成為3000 L,出現大量的廢液。清洗水的水質中氫氣濃度為10 ppm,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, the amount of waste liquid per hour becomes 3000 L, and a large amount of waste liquid appears. The hydrogen concentration in the water quality of the washing water is 10 ppm, and the deviation is within ±10%.
〔比較例4〕 於向超純水中以pH值成為9.0的方式添加氨而製造清洗水後,以50 L/min持續移送至使用點。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於使用點處的清洗水中斷使用的期間,亦製造所述清洗液並持續移送至使用點。[Comparative Example 4] After adding ammonia to the ultrapure water so that the pH value becomes 9.0 to produce washing water, it is continuously transferred to the point of use at 50 L/min. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. During the period when the cleaning water at the point of use is interrupted, the cleaning liquid is also manufactured and continuously transferred to the point of use.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量成為3000 L,出現大量的廢液。清洗水的水質中pH值為9.0,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, the amount of waste liquid per hour becomes 3000 L, and a large amount of waste liquid appears. The pH value of the cleaning water is 9.0, and the deviation is within ±10%.
〔比較例5〕 於向超純水中以導電率成為30 μS/cm的方式添加氨、以氧化還原電位成為600 mV的方式添加過氧化氫水、以氫氣濃度成為10 ppm的方式添加氫氣、以pH值成為9.0的方式添加氨而製造清洗水後,以50 L/min持續移送至使用點。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於使用點處的清洗水中斷使用的期間,亦製造所述清洗液並持續移送至使用點。[Comparative Example 5] To ultrapure water, add ammonia with a conductivity of 30 μS/cm, add hydrogen peroxide with a redox potential of 600 mV, add hydrogen with a hydrogen concentration of 10 ppm, and have a pH of 9.0 After adding ammonia to produce washing water, it is continuously transferred to the point of use at 50 L/min. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. During the period when the cleaning water at the point of use is interrupted, the cleaning liquid is also manufactured and continuously transferred to the point of use.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量成為3000 L,出現大量的廢液。清洗水的水質中導電率為30 μS/cm,氧化還原電位為600 mV,氫氣濃度為10 ppm,pH值為9.0,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, the amount of waste liquid per hour becomes 3000 L, and a large amount of waste liquid appears. The conductivity of the cleaning water is 30 μS/cm, the oxidation-reduction potential is 600 mV, the hydrogen concentration is 10 ppm, the pH value is 9.0, and the deviation is within ±10%.
〔比較例6〕 於向超純水中以導電率成為30 μS/cm的方式添加氨而製造清洗水後,以50 L/min移送至使用點。除晶圓的清洗處理時以外,停止向使用點移送清洗水。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於晶圓的連續清洗處理結束後,停止向使用點供給清洗水。[Comparative Example 6] After adding ammonia to the ultrapure water so that the conductivity becomes 30 μS/cm to produce washing water, it is transferred to the point of use at 50 L/min. Except for the wafer cleaning process, the transfer of cleaning water to the point of use is stopped. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. After the continuous cleaning process of the wafer ends, the supply of cleaning water to the point of use is stopped.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為20分鐘,每1小時的廢液量成為2500 L,出現大量的廢液。清洗水的水質中導電率為30 μS/cm,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for the wafer cleaning process was 20 minutes, the amount of waste liquid per hour became 2500 L, and a large amount of waste liquid appeared. The conductivity of the cleaning water is 30 μS/cm, and the deviation is within ±10%.
〔比較例7〕 於向超純水中以氧化還原電位成為600 mV的方式添加過氧化氫水而製造清洗水後,以50 L/min移送至使用點。除晶圓的清洗處理時以外,停止向使用點移送清洗水。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於晶圓的連續清洗處理結束後,停止向使用點供給清洗水。[Comparative Example 7] After adding hydrogen peroxide water to the ultrapure water so that the oxidation-reduction potential becomes 600 mV to produce washing water, it was transferred to the point of use at 50 L/min. Except for the wafer cleaning process, the transfer of cleaning water to the point of use is stopped. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. After the continuous cleaning process of the wafer ends, the supply of cleaning water to the point of use is stopped.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為20分鐘,每1小時的廢液量成為2500 L,出現大量的廢液。清洗水的水質中氧化還原電位為600 mV,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for the wafer cleaning process was 20 minutes, the amount of waste liquid per hour became 2500 L, and a large amount of waste liquid appeared. The redox potential of the cleaning water is 600 mV, and the deviation is within ±10%.
〔比較例8〕 於向超純水中以氫氣濃度成為10 ppm的方式添加氫氣而製造清洗水後,以50 L/min移送至使用點。除晶圓的清洗處理時以外,停止向使用點移送清洗水。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於晶圓的連續清洗處理結束後,停止向使用點供給清洗水。[Comparative Example 8] After adding hydrogen to ultrapure water so that the hydrogen concentration becomes 10 ppm to produce washing water, it is transferred to the point of use at 50 L/min. Except for the wafer cleaning process, the transfer of cleaning water to the point of use is stopped. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. After the continuous cleaning process of the wafer ends, the supply of cleaning water to the point of use is stopped.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為20分鐘,每1小時的廢液量成為2500 L,出現大量的廢液。清洗水的水質中氫氣濃度為10 ppm,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for the wafer cleaning process was 20 minutes, the amount of waste liquid per hour became 2500 L, and a large amount of waste liquid appeared. The hydrogen concentration in the water quality of the washing water is 10 ppm, and the deviation is within ±10%.
〔比較例9〕 於向超純水中以pH值成為9.0的方式添加氨而製造清洗水後,以50 L/min移送至使用點。除晶圓的清洗處理時以外,停止向使用點移送清洗水。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於晶圓的連續清洗處理結束後,停止向使用點供給清洗水。[Comparative Example 9] After adding ammonia to the ultrapure water so that the pH value becomes 9.0 to produce washing water, it was transferred to the point of use at 50 L/min. Except for the wafer cleaning process, the transfer of cleaning water to the point of use is stopped. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. After the continuous cleaning process of the wafer ends, the supply of cleaning water to the point of use is stopped.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為20分鐘,每1小時的廢液量成為2500 L,出現大量的廢液。清洗水的水質中pH值為9.0,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for the wafer cleaning process was 20 minutes, the amount of waste liquid per hour became 2500 L, and a large amount of waste liquid appeared. The pH value of the cleaning water is 9.0, and the deviation is within ±10%.
〔比較例10〕 於向超純水中以導電率成為30 μS/cm的方式添加氨、以氧化還原電位成為600 mV的方式添加過氧化氫水、以氫氣濃度成為10 ppm的方式添加氫氣、以pH值成為9.0的方式添加氨而製造清洗水後,以50 L/min移送至使用點。除晶圓的清洗處理時以外,停止向使用點移送清洗水。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於晶圓的連續清洗處理結束後,停止向使用點供給清洗水。[Comparative Example 10] To ultrapure water, add ammonia with a conductivity of 30 μS/cm, add hydrogen peroxide with a redox potential of 600 mV, add hydrogen with a hydrogen concentration of 10 ppm, and have a pH of 9.0 After adding ammonia to produce washing water, transfer it to the point of use at 50 L/min. Except for the wafer cleaning process, the transfer of cleaning water to the point of use is stopped. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. After the continuous cleaning process of the wafer ends, the supply of cleaning water to the point of use is stopped.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為20分鐘,每1小時的廢液量成為2500 L,出現大量的廢液。清洗水的水質中導電率為30 μS/cm,氧化還原電位為600 mV,氫氣濃度為10 ppm,pH值為9.0,偏差為±10%以內。As a result, the preparation time (time until the cleaning water stabilizes) for the wafer cleaning process was 20 minutes, the amount of waste liquid per hour became 2500 L, and a large amount of waste liquid appeared. The conductivity of the cleaning water is 30 μS/cm, the oxidation-reduction potential is 600 mV, the hydrogen concentration is 10 ppm, the pH value is 9.0, and the deviation is within ±10%.
於以下的比較例11中,使用圖4所示的先前的電子零件用清洗水的製造系統300來進行電子零件用清洗水的製造。電子零件用清洗水的製造系統300將於使用點未使用的清洗水暫時貯存於罐中,並對該罐製造並補給由於在使用點使用而減少的部分的清洗水。電子零件用清洗水的製造系統300包括:第一移送管線L31,連通原料水供給部與貯存罐34;第二移送管線L32,連通貯存罐34與使用點;以及返送管線L33,於位於第二移送管線L32的下游側的分支點分支,並與貯存罐34連通。於第一移送管線L31上沿著流通方向依序設置有流量計31、功能性物質添加裝置32,於第二移送管線L32中在較分支點而言更靠上游側設置有物性測定裝置33。自原料水供給部向第一移送管線L31的超純水的供給量可藉由在第一移送管線L31中設置於較流量計31而言更靠上游側的開關閥36進行調整。功能性物質添加裝置32經由開關閥37而與第一移送管線L31連接。於第二移送管線L32中,在貯存罐34的下游側沿著流通方向依序設置有開關閥38、供水泵35。In the following comparative example 11, the
〔比較例11〕 於向超純水中以導電率成為30 μS/cm的方式添加氨、以氧化還原電位成為600 mV的方式添加過氧化氫水、以氫氣濃度成為10 ppm的方式添加氫氣、以pH值成為9.0的方式添加氨而製造清洗水後,以50 L/min移送至使用點。除晶圓的清洗處理時以外,停止向使用點移送清洗水。晶圓是使用所述清洗水,對每一片以2 L/min清洗1分鐘。處理一片晶圓所需的整體時間為3分鐘。對10片晶圓持續進行該清洗處理。於晶圓的連續清洗處理結束後,停止向使用點供給清洗水。[Comparative Example 11] To ultrapure water, add ammonia with a conductivity of 30 μS/cm, add hydrogen peroxide with a redox potential of 600 mV, add hydrogen with a hydrogen concentration of 10 ppm, and have a pH of 9.0 After adding ammonia to produce washing water, transfer it to the point of use at 50 L/min. Except for the wafer cleaning process, the transfer of cleaning water to the point of use is stopped. Wafers were cleaned at 2 L/min for 1 minute using the cleaning water. The overall time required to process a wafer is 3 minutes. This cleaning process is continued for 10 wafers. After the continuous cleaning process of the wafer ends, the supply of cleaning water to the point of use is stopped.
其結果,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量為20 L。清洗水的水質中導電率為30 μS/cm,氧化還原電位為600 mV,氫氣濃度為10 ppm,pH值為9.0,偏差為±30%以內。As a result, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, and the amount of waste liquid per hour is 20 L. The conductivity of the cleaning water is 30 μS/cm, the oxidation-reduction potential is 600 mV, the hydrogen concentration is 10 ppm, the pH value is 9.0, and the deviation is within ±30%.
〔結果〕 將實施例1-實施例5及比較例1-比較例11的結果匯總示於表1。於實施例1-實施例5中,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量亦少至20 L。另一方面,於比較例1-比較例5中,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,但每1小時的廢液量為龐大的量而為3000 L。於比較例6-比較例10中,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為20分鐘,每1小時的廢液量為龐大的量而為2500 L。另外,於比較例11中,用以對晶圓進行清洗處理的準備時間(清洗水穩定為止的時間)為零,每1小時的廢液量亦少至20 L,但清洗水的水質的偏差大。〔result〕 Table 1 summarizes the results of Example 1 to Example 5 and Comparative Example 1 to Comparative Example 11. In Example 1 to Example 5, the preparation time (the time until the cleaning water stabilizes) for cleaning the wafer is zero, and the amount of waste liquid per hour is also as low as 20 L. On the other hand, in Comparative Example 1 to Comparative Example 5, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, but the amount of waste liquid per hour is a huge amount. 3000 L. In Comparative Example 6 to Comparative Example 10, the preparation time (time until the cleaning water is stabilized) for cleaning the wafer is 20 minutes, and the amount of waste liquid per hour is a huge amount of 2500 L. In addition, in Comparative Example 11, the preparation time (time until the cleaning water stabilizes) for cleaning the wafer is zero, and the amount of waste liquid per hour is as low as 20 L, but the quality of the cleaning water varies Big.
[表1]
如以上說明般,根據本發明的電子零件用清洗水的製造系統及電子零件用清洗水的製造方法,無論於使用點有無清洗水的使用,均將所製造的清洗水移送至使用點,同時亦藉由控制部件,於使用點未使用清洗水的情況下,控制成將清洗水返送至返送管線而暫時貯存於貯存罐中,於使用點使用清洗水的情況下,控制成將貯存於貯存罐中的清洗水供給至移送管線,藉此可大幅抑制所製造的清洗水的廢液量,同時亦可縮短於使用點使用的清洗水的準備時間(清洗水於設定條件下穩定為止的時間)。而且,可於移送管線上混合自貯存罐向移送管線供給的清洗水與於移送管線上新製造的清洗水後定量地測定其物性,因此始終可對使用點供給具有一定的物性值的清洗水。 [產業上之可利用性]As described above, according to the manufacturing system and method for manufacturing cleaning water for electronic parts of the present invention, regardless of whether the cleaning water is used at the point of use, the manufactured cleaning water is transferred to the point of use, and It is also controlled by the control part to return the washing water to the return line and temporarily store it in the storage tank when the washing water is not used at the point of use, and to store it in the storage when the washing water is used at the point of use The washing water in the tank is supplied to the transfer line, which can greatly reduce the amount of waste water of the produced washing water, and can also shorten the preparation time of the washing water used at the point of use (the time until the washing water is stable under the set conditions) ). Furthermore, the cleaning water supplied from the storage tank to the transfer line can be mixed with the newly-made cleaning water on the transfer line to quantitatively measure the physical properties on the transfer line, so it is always possible to supply cleaning water with a certain physical value to the point of use . [Industry availability]
本發明作為於半導體、液晶、有機EL等電子零件的製造步驟中所使用的電子零件用清洗水的製造系統及使用其的電子零件用清洗水的製造方法而有用。The present invention is useful as a manufacturing system for a washing water for electronic parts used in a manufacturing process of electronic parts such as semiconductors, liquid crystals, organic ELs, and a method for manufacturing the washing water for electronic parts using the same.
1:第一流量計 2:功能性物質添加裝置 3:物性測定裝置 4:貯存罐 5:第二流量計 6:供水泵 7:控制部件 8:分支點 9:合流點 10:第一開關閥 11:第二開關閥 12:第三開關閥 21:流量計 22:功能性物質添加裝置 23:物性測定裝置 24:開關閥 25:開關閥 31:流量計 32:功能性物質添加裝置 33:物性測定裝置 34:貯存罐 35:供水泵 36:開關閥 37:開關閥 38:開關閥 81:切換三通閥 100:電子零件用清洗水製造系統 200:電子零件用清洗水的製造系統 300:電子零件用清洗水的製造系統 L1:移送管線 L2:返送管線 L21:移送管線 L31:第一移送管線 L32:第二移送管線 L33:返送管線 W:超純水(原料水) W1、W1'、W1'':清洗水 1: the first flowmeter 2: Functional substance addition device 3: Physical property measuring device 4: storage tank 5: Second flow meter 6: Water supply pump 7: Control components 8: branch point 9: confluence point 10: The first switch valve 11: Second on-off valve 12: Third switching valve 21: Flowmeter 22: Functional substance adding device 23: Physical property measuring device 24: On-off valve 25: On-off valve 31: Flowmeter 32: Functional substance adding device 33: Physical property measuring device 34: Storage tank 35: Water supply pump 36: On-off valve 37: On-off valve 38: On-off valve 81: Switch three-way valve 100: Washing water manufacturing system for electronic parts 200: Manufacturing system of cleaning water for electronic parts 300: Manufacturing system of cleaning water for electronic parts L1: Transfer pipeline L2: Return pipeline L21: Transfer pipeline L31: the first transfer pipeline L32: Second transfer pipeline L33: Return pipeline W: Ultra-pure water (raw water) W1, W1', W1'': washing water
圖1是表示本發明的一實施形態的電子零件用清洗水製造系統的示意性說明圖。 圖2(a)~圖2(c)是表示圖1的電子零件用清洗水製造系統的清洗水的流通狀態的示意性說明圖,(a)是表示無論於使用點有無清洗水的使用均將清洗水移送至使用點的狀態,(b)是表示於使用點未使用清洗水的情況,(c)是表示於(b)之後於使用點使用清洗水的情況。 圖3是表示於比較例1-比較例10中使用的先前的電子零件用清洗水製造系統的示意性說明圖。 圖4是表示於比較例11中使用的先前的電子零件用清洗水製造系統的示意性說明圖。FIG. 1 is a schematic explanatory diagram showing a washing water manufacturing system for electronic parts according to an embodiment of the present invention. FIGS. 2(a) to 2(c) are schematic explanatory diagrams showing the flow state of the washing water in the washing water manufacturing system for electronic parts of FIG. 1, (a) is showing whether the washing water is used or not at the point of use. The state where the washing water is transferred to the point of use, (b) indicates the case where the washing water is not used at the point of use, and (c) indicates the case where the washing water is used at the point of use after (b). 3 is a schematic explanatory diagram showing a conventional washing water manufacturing system for electronic parts used in Comparative Example 1 to Comparative Example 10. FIG. 4 is a schematic explanatory diagram showing a conventional washing water manufacturing system for electronic parts used in Comparative Example 11. FIG.
1:第一流量計 1: the first flowmeter
2:功能性物質添加裝置 2: Functional substance addition device
3:物性測定裝置 3: Physical property measuring device
4:貯存罐 4: storage tank
5:第二流量計 5: Second flow meter
6:供水泵 6: Water supply pump
8:分支點 8: branch point
9:合流點 9: confluence point
10:第一開關閥 10: The first switch valve
11:第二開關閥 11: Second on-off valve
12:第三開關閥 12: Third switching valve
81:切換三通閥 81: Switch three-way valve
100:電子零件用清洗水製造系統 100: Washing water manufacturing system for electronic parts
L1:移送管線 L1: Transfer pipeline
L2:返送管線 L2: Return pipeline
W:超純水 W: ultrapure water
W1、W1':清洗水 W1, W1': washing water
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