CN115579311A - Control method and device for mixed acid activation state, computer equipment and storage medium - Google Patents
Control method and device for mixed acid activation state, computer equipment and storage medium Download PDFInfo
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- CN115579311A CN115579311A CN202211533941.2A CN202211533941A CN115579311A CN 115579311 A CN115579311 A CN 115579311A CN 202211533941 A CN202211533941 A CN 202211533941A CN 115579311 A CN115579311 A CN 115579311A
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Abstract
The application relates to a method and a device for controlling the activation state of mixed acid, computer equipment and a storage medium. The control method of the mixed acid activation state comprises the following steps: the mixed acid comprises hydrofluoric acid, nitric acid and acetic acid, and the method comprises the following steps: obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state; and when the concentration is lower than the preset threshold value, controlling the acid mixing barrel to discharge mixed acid with a preset volume, and injecting new mixed acid into the acid mixing barrel so as to maintain the concentration of hydrofluoric acid in the acid mixing barrel within a preset range. Compared with the conventional method that the mixed acid needs to be activated again after all the mixed acid is replaced after the etching round is finished, the acid changing method can maintain the mixed acid activation state, does not need to reactivate the mixed acid after each etching round is finished, does not cause the conditions of high and low concentration of each acid in the mixed acid, and can reduce the occurrence of abnormity such as over-etching or insufficient etching.
Description
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a method and an apparatus for controlling an activated state of a mixed acid, a computer device, and a storage medium.
Background
With the development of semiconductor process technology, the size of a semiconductor device is smaller and smaller, so that the size needs to be reduced from all aspects, the wafer needs to be thinned, and an etching process is involved in the thinning process of the wafer, wherein when the wafer is thinned by adopting a wet etching process in the etching process, etching liquids such as mixed acid and the like need to be in an activated state, so that the stability of the activated state of the etching liquids such as the mixed acid and the like used in the wet etching process is particularly important in the process of thinning the wafer.
The wet etching process of conventional wafer thinning is to change all mixed acid through manual setting after each etching round is finished, and when the next round etching is started, the mixed acid needs to be reactivated by using a control wafer so that the wafer thinning can be carried out when the mixed acid reaches an activated state, and the wafer thinning is high in cost and occupies more process time.
Disclosure of Invention
In view of the above, it is necessary to provide a method and an apparatus for controlling an activated state of a mixed acid, a computer device, and a storage medium.
In order to achieve the above object, in one aspect, the present application provides a method for controlling an activation state of a mixed acid, the mixed acid including hydrofluoric acid, nitric acid, and acetic acid, the method including:
obtaining the concentration of hydrofluoric acid in mixed acid when the mixed acid in an acid mixing barrel is in an etching state; wherein the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge the mixed acid with a preset volume, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
In one embodiment, the obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid bucket is in an etching state includes:
obtaining characteristic parameters of the mixed acid in an etching state, wherein the characteristic parameters are used for representing the concentration of hydrofluoric acid in the mixed acid; wherein the characteristic parameter includes at least one of a color characteristic, a conductivity characteristic, and an ion concentration characteristic.
In one embodiment, the step of injecting the new mixed acid into the mixed acid bucket to maintain the concentration of the hydrofluoric acid in the mixed acid bucket within a preset range includes:
injecting the new mixed acid with the preset volume into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range; wherein the preset range is 82% -95% of the concentration of hydrofluoric acid in the new mixed acid.
In one embodiment, the preset threshold is 4.5% to 5.5%.
In one embodiment, the concentration of hydrofluoric acid in the new mixed acid is 7.5% -8.5%.
In one embodiment, the preset volume is 3/5 to 7/10 of the initial volume.
In a second aspect, the present application further provides a mixed acid activation state control device, including:
the etching machine is internally provided with a mechanical arm which is used for taking and placing a device to be etched;
the mixed acid barrel is positioned in the etching machine and used for containing mixed acid, and the mixed acid comprises hydrofluoric acid, nitric acid and acetic acid;
the collecting device is connected with the mixed acid barrel and is used for collecting the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in an etching state; wherein the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and the main control device is connected with the acid mixing barrel and the collecting device and is used for obtaining the concentration of hydrofluoric acid in the mixed acid, controlling the acid mixing barrel to discharge the mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting new mixed acid into the acid mixing barrel so as to maintain the concentration of hydrofluoric acid in the acid mixing barrel within a preset range.
Compared with the conventional method that the mixed acid needs to be activated again after all the mixed acid is replaced after the etching rounds are finished, the acid changing method can save the cost of the mixed acid, can maintain the activated state of the mixed acid while saving the cost of the mixed acid, and does not need to reactivate the mixed acid after each etching round is finished; and the mixed acid barrel is controlled to discharge mixed acid with a preset volume and inject new mixed acid into the mixed acid barrel, so that the concentration of hydrofluoric acid in the mixed acid barrel is maintained in a preset range, the concentrations of nitric acid and acetic acid in the mixed acid can be maintained at a required concentration level all the time, the conditions of high and low concentration of each acid in the mixed acid are avoided, the occurrence of abnormity such as over-etching or insufficient etching is reduced, and the condition of performance abnormity of a semiconductor device prepared based on the current etching process is reduced.
In a third aspect, the present application further provides a control device for an activated state of mixed acid, including:
the acquisition module is used for acquiring the concentration of hydrofluoric acid in the mixed acid when the mixed acid is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and the control module is connected with the acquisition module and used for controlling the acid mixing barrel to discharge the mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting new mixed acid into the acid mixing barrel so as to maintain the concentration of hydrofluoric acid in the acid mixing barrel within a preset range.
In a fourth aspect, the present application also provides a computer device comprising a memory and a processor, the memory storing a computer program, the processor implementing the steps of the method as described above when executing the computer program.
In a fifth aspect, the present application also provides a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, performs the steps of the method as described above.
Compared with the conventional method for activating the mixed acid again by replacing all the mixed acid after the etching round is finished, the acid changing method can save the cost of the mixed acid, can maintain the activated state of the mixed acid while saving the cost of the mixed acid, and does not need to reactivate the mixed acid after each etching round is finished; and controlling the mixed acid barrel to discharge mixed acid with a preset volume, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range, and also to maintain the concentrations of nitric acid and acetic acid in the mixed acid at a required concentration level all the time, so that the conditions of sudden high and sudden low of the concentrations of the acids in the mixed acid can be avoided, the occurrence of abnormal conditions such as over-etching or insufficient etching can be reduced, and the condition that the performance of a semiconductor device prepared based on the current etching process is abnormal can be reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the description of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the description below are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of a method for controlling an activated state of a mixed acid according to an embodiment;
FIG. 2 is a schematic diagram of a process for maintaining an activated state of mixed acid according to an embodiment;
FIG. 3 is a schematic structural diagram of a control device in a mixed acid activated state according to an embodiment;
FIG. 4 is a block diagram illustrating an exemplary embodiment of a control device for mixed acid activation status;
fig. 5 is an internal structural diagram of a computer device provided in an embodiment.
Description of reference numerals:
1-mixed acid barrel; 11-acid inlet; 12-acid outlet; 100-etching machine; 101-a robotic arm; 102-a device to be etched; 2-mixed acid; 20-initial mixed acid; 21-old mixed acid; 22-new mixed acid; 23-mixed acid after mixing; 3-a collecting device; 4-a master control device; 401-an acquisition module; 402-control module.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
Spatially relative terms, such as "under," "below," "beneath," "under," "above," "over," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. In addition, the device may comprise additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Also, as used herein, the term "and/or" includes any and all combinations of the associated listed items.
With the development of semiconductor process technology, the size of a semiconductor device is smaller and smaller, so that the size reduction needs to be realized from all aspects, the wafer needs to be thinned, and an etching process is involved in the wafer thinning process, wherein when a wet etching process in the etching process is adopted to thin the wafer, etching liquid such as mixed acid needs to be in an activated state, so that the stability of the activated state of the etching liquid such as the mixed acid used in the wet etching process is particularly important in the process of thinning the wafer.
The wet etching process of conventional wafer thinning is to change all mixed acids through manual setting after each etching round is finished, when next round etching is started, the mixed acids need to be reactivated by using a control wafer, so that the wafer thinning can be carried out when the mixed acids reach an activated state, and in the middle and later periods of each etching round, the concentration of hydrofluoric acid in the mixed acids is reduced to lower concentration, so that the corrosion effect of the mixed acids is poor.
In view of the above, it is necessary to provide a method, an apparatus, a computer device, a storage medium, and a computer program product for controlling an activated state of a mixed acid.
As shown in fig. 1, the present application provides a method for controlling an activated state of mixed acid, where the mixed acid includes hydrofluoric acid, nitric acid, and acetic acid, and the method for controlling the activated state of mixed acid includes the following steps S101 to S102.
S101: obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in an etching state; wherein the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state.
Illustratively, the mixed acid may include HNA mixed acid; the device to be etched may comprise a backside illuminated sensor; the etching of the device to be etched may refer to thinning a wafer substrate of the device to be etched, wherein the main component of the wafer comprises P + Si (P-doped silicon); the mixed acid includes hydrofluoric acidAcid, nitric acid and acetic acid, so that the intermediate product of the reaction of the mixed acid and the wafer contains NO 2 (Nitrogen dioxide) gas, NO 2 Is a key intermediate affecting the etching rate of mixed acid and is accompanied by NO 2 The content of the mixed acid is gradually increased, and the etching rate of the mixed acid on the wafer is gradually increased; because the initial mixed acid etches the wafer very slowly, close to no etching, the mixed acid needs to be activated by utilizing a preset control wafer, so that the mixed acid can etch the wafer normally; thus, the mixed acid in an activated state can be understood as: the existing wafer or the preset control wafer reacts with the mixed acid to generate enough NO in the mixed acid barrel 2 To make the mixed acid in NO 2 The etching capability of the device to be etched is ensured in the atmosphere.
It can be understood that, in the activation process of the mixed acid, a preset control wafer or a wafer is placed in the initial mixed acid, the concentration of hydrofluoric acid in the initial mixed acid can be 7.5% -8.5%, the preset control wafer or the wafer is used as a catalyst to promote the decomposition of nitric acid in the mixed acid, and the reaction process is represented by a chemical formula:
wherein, HNO 3 Denotes nitric acid, NO 2 Denotes nitrogen dioxide, H 2 O represents water, O 2 Represents oxygen.
Illustratively, the predetermined control wafer includes, but is not limited to, a high P-type doped wafer (P) + wafer), low P-type doped wafer (P) - wafer), wherein the conductivity of the high P-type doped wafer can be set to be less than 0.01 Ω m, and the conductivity of the low P-type doped wafer can be set to be in the range of 9 Ω m to 11 Ω m.
Based on the formula (1), the nitric acid in the mixed acid is decomposed to generate nitrogen dioxide, so that the etching solution contains nitrogen dioxide; in some examples, mixed acid etching of wafers involves mainly the following chemical reaction processes:
(1) NO in nitric acid 2 Is reduced at the cathode position, thereby generating free holes, and the reaction process is as follows:
wherein h is + Represents a free hole;
(2) The wafer is raised to a higher oxidation state at the anode site, which provides a positive charge in the form of holes, as follows:
wherein, si 0 Representing silicon in the initial state, si 2+ Represents silicon ions;
（3）Si 2+ with OH - (hydroxide ion) binding to form SiO 2 (silica) by the following reaction:
wherein, si (OH) 2 Represents silicon hydroxide, H 2 O represents water;
（4）SiO 2 dissolved in HF (hydrofluoric acid), the reaction process is as follows:
wherein H 2 SiF 6 Indicating fluorosilicic acid.
S102: and when the concentration is lower than the preset threshold value, controlling the acid mixing barrel to discharge mixed acid with a preset volume, and injecting new mixed acid into the acid mixing barrel so as to maintain the concentration of hydrofluoric acid in the acid mixing barrel within a preset range.
The preset threshold is the lowest concentration value of hydrofluoric acid set according to actual etching requirements, and it can be understood that the concentration of hydrofluoric acid is gradually reduced in the process of etching the device by mixing acid, and the concentration of hydrofluoric acid in the acid mixing barrel is reduced to the preset valueWhen the threshold value is set, the reacted mixed acid with a preset volume needs to be discharged, and a certain volume of new mixed acid needs to be added, wherein the new mixed acid can be the initial mixed acid mentioned above, the concentration of hydrofluoric acid in the new mixed acid is higher than the preset threshold value, and a certain volume of the previously reacted mixed acid is still left in the mixed acid barrel, so that some NO is still left in the mixed acid barrel 2 Therefore, the mixed acid obtained after adding the new mixed acid is still in an activated state, and the concentration of hydrofluoric acid in the mixed acid barrel is maintained within a preset range, so that enough hydrofluoric acid is provided for etching while the activated state of the mixed acid is maintained.
For example, referring to fig. 2, a schematic diagram of an acid changing process may be shown, where an acid inlet 11 and an acid outlet 12 are provided in a mixed acid barrel 1, an initial volume of initial mixed acid 20 is injected into the mixed acid barrel 1, the initial mixed acid 20 gradually changes into an old mixed acid 21 after reacting with a wafer, when a concentration of hydrofluoric acid is lower than a preset threshold, the old mixed acid 21 with a preset volume is discharged through the acid outlet 12, and a new mixed acid 22 is injected through the acid inlet 11 to obtain a mixed acid 23; and repeatedly circulating the process of discharging the old mixed acid 21 with the preset volume and injecting the new mixed acid 22 when the concentration of the hydrofluoric acid is lower than the preset threshold value to obtain the mixed acid 23 so as to keep the mixed acid in an activated state continuously.
Further, the devices to be etched may be placed in the acid mixing barrel 1 in batches for etching, for example, the devices to be etched may be set according to lot, the number of the devices to be etched in each lot is 20 to 30, 1 device to be etched is placed in each lot, and after the etching is completed, the device to be etched is taken out and is transferred to the processing equipment of the next process.
In the method for controlling the mixed acid activation state in the embodiment, the concentration of hydrofluoric acid in the mixed acid is obtained when the mixed acid is in the etching state, and part of the mixed acid is replaced when the concentration is lower than the preset threshold value, compared with the conventional method that the mixed acid needs to be activated again when all the mixed acid is replaced after the etching round is finished, the acid replacement method can save the mixed acid cost, can maintain the mixed acid activation state while saving the mixed acid cost, and does not need to reactivate the mixed acid after each etching round is finished; and the mixed acid barrel is controlled to discharge mixed acid with a preset volume, and new mixed acid is injected into the mixed acid barrel, so that the concentration of hydrofluoric acid in the mixed acid barrel is maintained in a preset range, the concentrations of nitric acid and acetic acid in the mixed acid can be maintained at a required concentration level all the time, the conditions of sudden high and sudden low of the concentrations of the acids in the mixed acid are avoided, the occurrence of abnormal conditions such as over-etching or insufficient etching is reduced, and the condition that the performance of a semiconductor device prepared based on the current etching process is abnormal is reduced.
In one embodiment, obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid tank is in an etching state may include: acquiring characteristic parameters of the mixed acid in an etching state, wherein the characteristic parameters are used for representing the concentration of hydrofluoric acid in the mixed acid; wherein the characteristic parameter comprises at least one of a color characteristic, a conductivity characteristic, and an ion concentration characteristic.
The spectrometer can be used for collecting the color of the solution after the mixed acid reacts with the wafer, so as to obtain the characteristic parameters. Specifically, color information of the reaction liquid can be obtained by measuring the wavelength of light by a spectrometer. In practical applications, a spectrometer may be installed in the acid mixing barrel, and the color of the reaction solution in the acid mixing barrel may be detected by the spectrometer.
The ion concentration characteristics may include the concentration of fluorine ions, and specifically, the concentration of hydrofluoric acid may be visually obtained by monitoring the concentration of fluorine ions in a solution after the mixed acid in the mixed acid tank reacts with the wafer. In an actual process environment, the measured fluorine ion concentration can be directly displayed on a display of a terminal device through a curve or a numerical value.
In the embodiment, the concentration of hydrofluoric acid in the mixed acid is obtained in an accurate testing manner when the mixed acid in the mixed acid barrel is in an etching state, so that a relatively accurate concentration value of the hydrofluoric acid can be obtained, and whether the operation such as acid change is needed or not can be judged in time based on the concentration value.
In one embodiment, injecting the new mixed acid into the mixed acid bucket to maintain the concentration of the hydrofluoric acid in the mixed acid bucket within a preset range may include: injecting new mixed acid with a preset volume into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range; wherein the preset range is 82% -95% of the concentration of hydrofluoric acid in the new mixed acid.
The concentration corresponding to the preset range can be 7% -8%, and it can be understood that after the mixed acid with the preset volume is discharged and new mixed acid is added, the concentration of hydrofluoric acid in the obtained mixed acid is 7% -8%, namely after the new mixed acid is injected into the mixed acid barrel, the concentration of hydrofluoric acid in the current mixed acid barrel is 7% -8%.
Further, the concentration corresponding to the preset range may be 7%, 7.5% or 8%; the concentration corresponding to the preset range can be other concentrations between 7% and 8%, and is not limited by the examples.
It should be noted that the preset range is correspondingly set according to the initial mixed acid, the preset volume and the actual requirement, and can be calculated according to the concentration of the initial mixed acid, the preset volume, the actual process requirement and the like, and the specific numerical range mentioned above is only an example for facilitating understanding and is not used to limit the protection range of the scheme.
In one embodiment, the predetermined threshold is 4.5% to 5.5%.
The preset threshold is 4.5% -5.5%, and it can be understood that when the concentration of the hydrofluoric acid in the acid mixing barrel is reduced to 4.5% -5.5%, the acid mixing barrel needs to be controlled to discharge the mixed acid with the preset volume, and new mixed acid is injected into the acid mixing barrel to maintain the hydrofluoric acid with sufficient concentration for etching.
For example, the preset threshold may be 4.5%, 5%, or 5.5%, or other concentrations between 4.5% and 5.5%, without limitation.
The concentration of hydrofluoric acid in the initial mixed acid is 7.5% -8.5%, and the concentration of hydrofluoric acid can be gradually reduced along with the reaction of the mixed acid and the device to be etched, so that a preset threshold value needs to be set for clamping control to ensure that the corrosion rate of the mixed acid can be in a required corrosion rate range all the time.
In one embodiment, the concentration of hydrofluoric acid in the fresh mixed acid is 7.5% -8.5%.
Wherein, the new mixed acid can be initial mixed acid, the concentration of hydrofluoric acid in the new mixed acid can be 7.5-8.5%, the new mixed acid is added into the mixed acid barrel to be mixed with the old mixed acid left before, so as to improve the integrityThe concentration of the mixed acid is such that the initial mixed acid comprises hydrofluoric acid, nitric acid and acetic acid, and therefore NO 2 The concentration of the mixed acid is not reduced, the whole mixed acid can still be in an activated state all the time, and the required corrosion rate can also be maintained.
Illustratively, the concentration of hydrofluoric acid in the new mixed acid can be 7.5%, 8%, or other concentrations between 7% and 8%, without limitation.
In one embodiment, the preset volume is 3/5 to 7/10 of the initial volume.
Wherein the preset volume is 3/5 to 7/10 of the initial volume, and the method can be understood as discharging 3/5 to 7/10 of old mixed acid when the concentration of hydrofluoric acid in the acid mixing barrel is monitored to be reduced to a preset threshold value; the volume discharged is 3/5L to 7/10L, assuming that the initial volume is L.
The preset volume can be, for example, 3/5, 2/3 or 7/10 of the initial volume, or can be other volumes within the range of 3/5 to 7/10 of the initial volume, and is not limited by the examples.
In one embodiment, the volume of the injected fresh mixed acid may be a preset volume.
It can be understood that when the concentration of the hydrofluoric acid in the acid mixing barrel is monitored to be reduced to the preset threshold value, the old mixed acid with the preset volume is discharged, and the new mixed acid with the preset volume is added to maintain the total volume unchanged.
For convenience of understanding, the implementation of the scheme can be described by adopting a preset volume of 2/3 of the initial volume, the initial volume is set as L, the preset volume is 2/3L, when the concentration of hydrofluoric acid in the mixed acid barrel is reduced to a preset threshold value, 2/3L of old mixed acid is discharged, and 2/3L of new mixed acid is injected, so that the whole volume of the mixed acid obtained in the way is still kept as L, the discharge and injection of the mixed acid with the same volume are still carried out when the concentration of the hydrofluoric acid in the mixed acid barrel is monitored to be reduced to the preset threshold value next time, the cyclic acid change can be realized, and the mixed acid is kept in an activated state for a long time; it should be noted that the preset volume is 2/3 of the initial volume, which is specifically described for the convenience of understanding the scheme, and is not intended to limit the scope of the scheme of the present application.
It should be understood that, although the steps in the flowchart of fig. 1 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a portion of the steps in fig. 1 may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed in turn or alternately with other steps or at least a portion of the other steps or stages.
The present application further provides a control device for an activated state of mixed acid, as shown in fig. 3, the control device for an activated state of mixed acid includes: the etching machine 100, the acid mixing barrel 1, the collecting device 3 and the main control device 4; a mechanical arm 101 is arranged in the etching machine 100, and the mechanical arm 101 is used for taking and placing a device 102 to be etched; the mixed acid barrel 1 is positioned in the etching machine 100 and used for containing mixed acid 2, and the mixed acid 2 comprises hydrofluoric acid, nitric acid and acetic acid; the collecting device 3 is connected with the mixed acid barrel 1 and is used for collecting the concentration of hydrofluoric acid in the mixed acid 2 when the mixed acid 2 in the mixed acid barrel 1 is in an etching state; wherein, the etching state comprises a state of etching the device to be etched when the mixed acid 2 is in an activated state; the main control device 4 is connected with the mixed acid barrel 1 and the collecting device 3, and is used for obtaining the concentration of hydrofluoric acid in the mixed acid 2, controlling the mixed acid barrel 1 to discharge mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting new mixed acid into the mixed acid barrel 1, so that the concentration of hydrofluoric acid in the mixed acid barrel 1 is maintained within a preset range.
Still referring to fig. 3, the acid mixing barrel 1 is provided with an acid inlet 11 and an acid outlet 12, an initial volume of initial mixed acid is injected into the acid mixing barrel 1, the initial mixed acid gradually changes into old mixed acid after reacting with the wafer, when the concentration of hydrofluoric acid is lower than a preset threshold value, the old mixed acid with a preset volume is discharged through the acid outlet 12, and new mixed acid is injected through the acid inlet 11 to obtain mixed acid after mixing; and repeatedly circulating the process of discharging the old mixed acid with the preset volume and injecting the new mixed acid when the concentration of the hydrofluoric acid is lower than the preset threshold value to obtain the mixed acid after mixing so as to keep the mixed acid in an activated state continuously.
In the control device for the mixed acid activation state in the embodiment, the concentration of hydrofluoric acid in the mixed acid 2 is collected by the collection device 3 when the mixed acid 2 is in the etching state, and the main control device 4 controls the mixed acid barrel 1 to discharge the mixed acid 2 with the preset volume when the concentration is lower than the preset threshold value, compared with a conventional method that the mixed acid needs to be activated again after all mixed acids are replaced after the etching round is finished, the acid changing method can save the mixed acid cost, can maintain the mixed acid activation state while saving the mixed acid cost, and does not need to reactivate the mixed acid after each etching round is finished; and the mixed acid barrel 1 is controlled to discharge mixed acid with a preset volume and inject new mixed acid into the mixed acid barrel, so that the concentration of hydrofluoric acid in the mixed acid barrel 1 is maintained within a preset range, the concentrations of nitric acid and acetic acid in the mixed acid can be maintained at a required concentration level all the time, the conditions of high and low concentration of each acid in the mixed acid can be avoided, the occurrence of abnormity such as over-etching or insufficient etching can be reduced, and the condition that performance of a semiconductor device prepared based on the etching process is abnormal can be reduced.
Based on the same inventive concept, the embodiment of the application also provides a control device of the mixed acid activation state for realizing the control method of the mixed acid activation state. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme described in the above method, so specific limitations in one or more embodiments of the control device for the mixed acid activated state provided below can be referred to the above limitations on the control method for the mixed acid activated state, and are not described herein again.
In one embodiment, as shown in fig. 4, there is provided a control device for mixed acid activation status, comprising: an acquisition module 401 and a control module 402, wherein:
an obtaining module 401, configured to obtain a concentration of hydrofluoric acid in the mixed acid when the mixed acid is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state.
And the control module 402 is connected to the obtaining module 401, and configured to control the acid mixing barrel to discharge mixed acid with a preset volume when the concentration is lower than a preset threshold, and inject new mixed acid into the acid mixing barrel, so that the concentration of hydrofluoric acid in the acid mixing barrel is maintained within a preset range.
In the control device of the mixed acid activation state in the embodiment, the concentration of hydrofluoric acid in the mixed acid is collected by the acquisition module 401 when the mixed acid is in the etching state, and the mixed acid with the preset volume is discharged by the control module 402 when the concentration is lower than the preset threshold, compared with the conventional method that the mixed acid needs to be activated again after all the mixed acid is replaced after the etching round is finished, the acid changing method can save the mixed acid cost, can maintain the mixed acid activation state while saving the mixed acid cost, and does not need to reactivate the mixed acid after each etching round is finished; and the mixed acid barrel is controlled to discharge mixed acid with a preset volume and inject new mixed acid into the mixed acid barrel, so that the concentration of hydrofluoric acid in the mixed acid barrel is maintained in a preset range, the concentrations of nitric acid and acetic acid in the mixed acid can be maintained at a required concentration level all the time, the conditions of sudden high and sudden low of the concentrations of the acids in the mixed acid are avoided, the occurrence of abnormal conditions such as over-etching or insufficient etching is reduced, and the condition that the performance of a semiconductor device prepared based on the current etching process is abnormal is reduced.
In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as shown in fig. 5. The computer apparatus includes a processor, a memory, an input/output interface, a communication interface, a display unit, and an input device. The processor, the memory and the input/output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input/output interface. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of an operating system and computer programs in the non-volatile storage medium. The input/output interface of the computer device is used for exchanging information between the processor and an external device. The communication interface of the computer device is used for communicating with an external terminal in a wired or wireless manner, and the wireless manner can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by a processor to implement a method of controlling the activation state of a mixed acid. The display unit of the computer device is used for forming a visual picture and can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, a key, a track ball or a touch pad arranged on the shell of the computer equipment, an external keyboard, a touch pad or a mouse and the like.
Those skilled in the art will appreciate that the configuration shown in fig. 5 is a block diagram of only a portion of the configuration associated with the present application, and does not constitute a limitation on the electronic device to which the present application is applied, and a particular electronic device may include more or less components than those shown in the drawings, or may combine certain components, or have a different arrangement of components.
In one embodiment, a computer device is provided, comprising a memory and a processor, the memory having a computer program stored therein, the processor implementing the following steps when executing the computer program:
obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge the mixed acid with a preset volume, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
In one embodiment, a computer-readable storage medium is provided, having a computer program stored thereon, which when executed by a processor, performs the steps of:
obtaining the concentration of hydrofluoric acid in mixed acid when the mixed acid in an acid mixing barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge the mixed acid with a preset volume, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
In one embodiment, a computer program product is provided, comprising a computer program which when executed by a processor performs the steps of:
obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge the mixed acid with a preset volume, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above may be implemented by hardware instructions of a computer program, which may be stored in a non-volatile computer-readable storage medium, and when executed, may include the processes of the embodiments of the methods described above. Any reference to memory, database, or other medium used in the embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high-density embedded nonvolatile Memory, resistive Random Access Memory (ReRAM), magnetic Random Access Memory (MRAM), ferroelectric Random Access Memory (FRAM), phase Change Memory (PCM), graphene Memory, and the like. Volatile Memory can include Random Access Memory (RAM), external cache Memory, and the like. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM), for example. The databases referred to in various embodiments provided herein may include at least one of relational and non-relational databases. The non-relational database may include, but is not limited to, a block chain based distributed database, and the like. The processors referred to in the various embodiments provided herein may be, without limitation, general purpose processors, central processing units, graphics processors, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, or the like.
All possible combinations of the technical features of the above embodiments may not be described for the sake of brevity, but should be considered as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent application shall be subject to the appended claims.
Claims (10)
1. A method for controlling the activation state of a mixed acid, wherein the mixed acid comprises hydrofluoric acid, nitric acid and acetic acid, and the method comprises the following steps:
obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in an etching state; wherein the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge the mixed acid with a preset volume, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
2. The method for controlling the activation state of the mixed acid according to claim 1, wherein the obtaining of the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in the etching state comprises:
obtaining characteristic parameters of the mixed acid in an etching state, wherein the characteristic parameters are used for representing the concentration of hydrofluoric acid in the mixed acid; wherein the characteristic parameter comprises at least one of a color characteristic, a conductivity characteristic, and an ion concentration characteristic.
3. The method as claimed in claim 1, wherein the step of injecting the fresh mixed acid into the mixed acid tank to maintain the concentration of hydrofluoric acid in the mixed acid tank within a predetermined range comprises:
injecting the new mixed acid with the preset volume into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range; wherein the preset range is 82% -95% of the concentration of hydrofluoric acid in the new mixed acid.
4. The method for controlling the activation state of mixed acid according to claim 1, wherein the predetermined threshold is 4.5% -5.5%.
5. The method for controlling the activation state of the mixed acid according to claim 1, wherein the concentration of hydrofluoric acid in the new mixed acid is 7.5% -8.5%.
6. The method for controlling the activation state of mixed acid according to claim 1, wherein the preset volume is 3/5 to 7/10 of the initial volume.
7. A mixed acid activated state control apparatus, comprising:
the etching machine is internally provided with a mechanical arm, and the mechanical arm is used for taking and placing a device to be etched;
the acid mixing barrel is positioned in the etching machine and used for containing mixed acid, and the mixed acid comprises hydrofluoric acid, nitric acid and acetic acid;
the collecting device is connected with the mixed acid barrel and is used for collecting the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in an etching state; wherein the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and the main control device is connected with the acid mixing barrel and the acquisition device and is used for acquiring the concentration of hydrofluoric acid in the mixed acid, controlling the acid mixing barrel to discharge the mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting new mixed acid into the acid mixing barrel so as to maintain the concentration of the hydrofluoric acid in the acid mixing barrel within a preset range.
8. A mixed acid activated state control apparatus, comprising:
the acquisition module is used for acquiring the concentration of hydrofluoric acid in the mixed acid when the mixed acid is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and the control module is connected with the acquisition module and used for controlling the acid mixing barrel to discharge the mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting new mixed acid into the acid mixing barrel so as to maintain the concentration of hydrofluoric acid in the acid mixing barrel within a preset range.
9. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor, when executing the computer program, implements the steps of the method of any of claims 1 to 6.
10. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the steps of the method according to any one of claims 1 to 6.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116453983A (en) * | 2023-06-16 | 2023-07-18 | 合肥晶合集成电路股份有限公司 | HNA solution reaction state adjusting method, HNA solution reaction state adjusting system and semiconductor device etching method |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020059943A1 (en) * | 2000-11-08 | 2002-05-23 | Yosuhito Inagaki | Method and apparatus for wet-cleaning substrate |
| JP2006151779A (en) * | 2004-12-01 | 2006-06-15 | Sharp Corp | Method and apparatus for manufacturing silicon crystal substrate |
| US20070272657A1 (en) * | 2001-12-07 | 2007-11-29 | Eric Hansen | Apparatus and method for single substrate processing |
| JP2008066706A (en) * | 2006-09-08 | 2008-03-21 | Samsung Electronics Co Ltd | Etching solution supply unit, etching apparatus, and etching method |
| CN101717938A (en) * | 2009-11-10 | 2010-06-02 | 天津市环欧半导体材料技术有限公司 | Technique for etching silicon slice with acid |
| US20170098558A1 (en) * | 2015-10-06 | 2017-04-06 | United Microelectronics Corp. | Acid replenishing system and method for acid tank |
| CN109148338A (en) * | 2018-09-04 | 2019-01-04 | 杭州中芯晶圆半导体股份有限公司 | A kind of method and device for improving etching machine nitration mixture and changing liquid efficiency |
| CN109801865A (en) * | 2019-02-01 | 2019-05-24 | 尚德太阳能电力有限公司 | Room temperature etching device and correlation method for cell piece |
| US20190371615A1 (en) * | 2014-06-10 | 2019-12-05 | International Business Machines Corporation | Selective etching of silicon wafer |
| CN110907509A (en) * | 2019-11-28 | 2020-03-24 | 湖北兴福电子材料有限公司 | Method for detecting hydrofluoric acid in electronic-grade mixed acid |
| CN111715134A (en) * | 2019-03-21 | 2020-09-29 | 长鑫存储技术有限公司 | Fluid mixing device, control method thereof and etching equipment |
| CN111751491A (en) * | 2020-07-24 | 2020-10-09 | 苏州市晶协高新电子材料有限公司 | Method for analyzing concentration of mixed acid in silicon etching solution |
| CN114999899A (en) * | 2022-08-08 | 2022-09-02 | 广州粤芯半导体技术有限公司 | Wafer cleaning method |
-
2022
- 2022-12-02 CN CN202211533941.2A patent/CN115579311B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020059943A1 (en) * | 2000-11-08 | 2002-05-23 | Yosuhito Inagaki | Method and apparatus for wet-cleaning substrate |
| US20070272657A1 (en) * | 2001-12-07 | 2007-11-29 | Eric Hansen | Apparatus and method for single substrate processing |
| JP2006151779A (en) * | 2004-12-01 | 2006-06-15 | Sharp Corp | Method and apparatus for manufacturing silicon crystal substrate |
| JP2008066706A (en) * | 2006-09-08 | 2008-03-21 | Samsung Electronics Co Ltd | Etching solution supply unit, etching apparatus, and etching method |
| CN101717938A (en) * | 2009-11-10 | 2010-06-02 | 天津市环欧半导体材料技术有限公司 | Technique for etching silicon slice with acid |
| US20190371615A1 (en) * | 2014-06-10 | 2019-12-05 | International Business Machines Corporation | Selective etching of silicon wafer |
| US20170098558A1 (en) * | 2015-10-06 | 2017-04-06 | United Microelectronics Corp. | Acid replenishing system and method for acid tank |
| CN109148338A (en) * | 2018-09-04 | 2019-01-04 | 杭州中芯晶圆半导体股份有限公司 | A kind of method and device for improving etching machine nitration mixture and changing liquid efficiency |
| CN109801865A (en) * | 2019-02-01 | 2019-05-24 | 尚德太阳能电力有限公司 | Room temperature etching device and correlation method for cell piece |
| CN111715134A (en) * | 2019-03-21 | 2020-09-29 | 长鑫存储技术有限公司 | Fluid mixing device, control method thereof and etching equipment |
| CN110907509A (en) * | 2019-11-28 | 2020-03-24 | 湖北兴福电子材料有限公司 | Method for detecting hydrofluoric acid in electronic-grade mixed acid |
| CN111751491A (en) * | 2020-07-24 | 2020-10-09 | 苏州市晶协高新电子材料有限公司 | Method for analyzing concentration of mixed acid in silicon etching solution |
| CN114999899A (en) * | 2022-08-08 | 2022-09-02 | 广州粤芯半导体技术有限公司 | Wafer cleaning method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116453983A (en) * | 2023-06-16 | 2023-07-18 | 合肥晶合集成电路股份有限公司 | HNA solution reaction state adjusting method, HNA solution reaction state adjusting system and semiconductor device etching method |
| CN116453983B (en) * | 2023-06-16 | 2023-09-08 | 合肥晶合集成电路股份有限公司 | HNA solution reaction state adjusting method, HNA solution reaction state adjusting system and semiconductor device etching method |
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| Publication number | Publication date |
|---|---|
| CN115579311B (en) | 2023-05-02 |
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