CN115579311B - Mixed acid activation state control method and device, computer equipment and storage medium - Google Patents
Mixed acid activation state control method and device, computer equipment and storage medium Download PDFInfo
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- CN115579311B CN115579311B CN202211533941.2A CN202211533941A CN115579311B CN 115579311 B CN115579311 B CN 115579311B CN 202211533941 A CN202211533941 A CN 202211533941A CN 115579311 B CN115579311 B CN 115579311B
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Abstract
The application relates to a method and a device for controlling a mixed acid activation state, computer equipment and a storage medium. The control method of the mixed acid activation state comprises the following steps: the mixed acid comprises hydrofluoric acid, nitric acid and acetic acid, and the method comprises the following steps: acquiring the concentration of hydrofluoric acid in mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state; and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge a preset volume of mixed acid, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range. Compared with the conventional mode that the mixed acid is replaced after the etching rounds are finished and the mixed acid is required to be activated again, the acid replacing mode can maintain the mixed acid activation state, does not need to reactivate the mixed acid after each etching round is finished, does not have the conditions of abrupt high concentration and abrupt low concentration of each acid in the mixed acid, and can reduce the occurrence of abnormality such as over etching or insufficient etching.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a method and apparatus for controlling a mixed acid activation state, a computer device, and a storage medium.
Background
With the development of semiconductor process technology, the size of a semiconductor device is smaller and smaller, so that the size reduction is required to be realized in various aspects, the wafer is required to be thinned, and an etching process is involved in the wafer thinning process, wherein when the wafer is thinned by adopting a wet etching process in the etching process, an etching liquid such as mixed acid is required to be in an activated state, and therefore, the stability of the activated state of the etching liquid such as mixed acid used in the wet etching process is particularly important in the wafer thinning process.
The conventional wet etching process of wafer thinning is to manually set and replace all mixed acid after each etching round is finished, and the mixed acid needs to be reactivated by using a control wafer when the next round of etching is started so that the mixed acid reaches an activated state to thin the wafer, thereby having high cost and occupying more process time.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a method, apparatus, computer device, and storage medium for controlling the activation state of mixed acid.
In order to achieve the above object, in one aspect, the present application provides a method for controlling an activation state of a mixed acid, where the mixed acid includes hydrofluoric acid, nitric acid, and acetic acid, the method includes:
acquiring the concentration of hydrofluoric acid in mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge a preset volume of the mixed acid, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
In one embodiment, the obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid tank is in an etching state includes:
acquiring characteristic parameters of the mixed acid in an etching state, wherein the characteristic parameters are used for representing the concentration of hydrofluoric acid in the mixed acid; wherein the characteristic parameter includes at least one of a color characteristic, a conductivity characteristic, and an ion concentration characteristic.
In one embodiment, the injecting the new mixed acid into the mixed acid tank to maintain the concentration of the hydrofluoric acid in the mixed acid tank within a preset range includes:
injecting the new mixed acid with the preset volume into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range; the preset range is 82% -95% of the concentration of hydrofluoric acid in the new mixed acid.
In one embodiment, the preset threshold is 4.5% -5.5%.
In one embodiment, the concentration of hydrofluoric acid in the new mixed acid is 7.5% -8.5%.
In one embodiment, the preset volume is 3/5-7/10 of the initial volume.
In a second aspect, the present application further provides a control device for a mixed acid activation state, including:
the etching machine is internally provided with a mechanical arm which is used for taking and placing a device to be etched;
the mixed acid barrel is positioned in the etching machine and used for accommodating mixed acid, and the mixed acid comprises hydrofluoric acid, nitric acid and acetic acid;
the collection device is connected with the mixed acid barrel and is used for collecting the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
the main control device is connected with the mixed acid barrel and the acquisition device and is used for acquiring the concentration of hydrofluoric acid in the mixed acid, controlling the mixed acid barrel to discharge the mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of the hydrofluoric acid in the mixed acid barrel within a preset range.
According to the control device for the mixed acid activation state, the concentration of hydrofluoric acid in the mixed acid is collected when the mixed acid is in the etching state by adopting the collecting device, and the main control device is used for controlling the mixed acid barrel to discharge the mixed acid with the preset volume when the concentration is lower than the preset threshold value; and the mixed acid barrel is controlled to discharge mixed acid with preset volume and new mixed acid is injected into the mixed acid barrel, so that the concentration of hydrofluoric acid in the mixed acid barrel is maintained within a preset range, the concentration of nitric acid and acetic acid in the mixed acid can be always maintained at a required concentration level, the conditions of sudden high and sudden low of the concentration of each acid in the mixed acid can not occur, the occurrence of abnormal conditions such as over etching or insufficient etching can be reduced, and the condition of abnormal performance of a semiconductor device prepared based on the etching process can be reduced.
In a third aspect, the present application further provides a control device for a mixed acid activation state, including:
the acquisition module is used for acquiring the concentration of hydrofluoric acid in the mixed acid when the mixed acid is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and the control module is connected with the acquisition module and is used for controlling the mixed acid barrel to discharge the mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
In a fourth aspect, the present application also provides a computer device comprising a memory storing a computer program and a processor implementing the steps of the method as described above when the computer program is executed by the processor.
In a fifth aspect, the present application also provides a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the method as described above.
According to the method, the device, the computer equipment and the readable storage medium for controlling the mixed acid activation state, the concentration of hydrofluoric acid in the mixed acid is obtained when the mixed acid is in the etching state, and part of volume mixed acid is replaced when the concentration is lower than the preset threshold value; and the mixed acid barrel is controlled to discharge mixed acid with a preset volume, new mixed acid is injected into the mixed acid barrel, so that the concentration of hydrofluoric acid in the mixed acid barrel is maintained within a preset range, the concentration of nitric acid and acetic acid in the mixed acid can be always maintained at a required concentration level, the conditions of sudden high and sudden low of the concentration of each acid in the mixed acid can not occur, the occurrence of abnormal conditions such as over etching or insufficient etching can be reduced, and the condition of abnormal performance of a semiconductor device prepared based on the etching process can be reduced.
Drawings
In order to more clearly illustrate the technical solutions of embodiments or conventional techniques of the present application, the drawings required for the descriptions of the embodiments or conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a flow chart of a method for controlling the activation state of mixed acid according to an embodiment;
FIG. 2 is a schematic diagram of a process for maintaining mixed acid activation status in one embodiment;
FIG. 3 is a schematic structural diagram of a control device for mixed acid activation status according to an embodiment;
FIG. 4 is a block diagram of a control device for mixed acid activation status according to an embodiment;
fig. 5 is an internal structural diagram of a computer device provided in an embodiment.
Reference numerals illustrate:
1-an acid mixing barrel; 11-an acid inlet; 12-acid outlet; 100-etching machine; 101-a mechanical arm; 102-a device to be etched; 2-mixing acid; 20-initial acid mixing; 21-old mixed acid; 22-new mixed acid; 23-mixed acid after mixing; 3-a collection device; 4-a master control device; 401-an acquisition module; 402-control module.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
Spatially relative terms, such as "under", "below", "beneath", "under", "above", "over" and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. Furthermore, the device may also include an additional orientation (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Also, as used herein, the term "and/or" includes any and all combinations of the associated listed items.
With the development of semiconductor process technology, the size of a semiconductor device is smaller and smaller, so that the size reduction is required to be realized in various aspects, the wafer is required to be thinned, and an etching process is involved in the wafer thinning process, wherein when the wafer is thinned by adopting a wet etching process in the etching process, an etching liquid such as mixed acid is required to be in an activated state, and therefore, the stability of the activated state of the etching liquid such as mixed acid used in the wet etching process is particularly important in the wafer thinning process.
The conventional wet etching process of wafer thinning is to manually set and replace all mixed acid after each etching round is finished, and the mixed acid needs to be reactivated by using a control wafer when the next round of etching is started so that the mixed acid reaches an activated state to thin the wafer, and the concentration of hydrofluoric acid in the mixed acid is reduced to a lower concentration at the middle and later stages of each etching round, so that the etching effect of the mixed acid is poor.
Based on this, it is necessary to provide a method, an apparatus, a computer device, a storage medium and a computer program product for controlling the activation state of mixed acid in order to solve the above-mentioned problems.
As shown in fig. 1, the present application provides a method for controlling an activated state of a mixed acid, where the mixed acid includes hydrofluoric acid, nitric acid, and acetic acid, and the method for controlling the activated state of the mixed acid includes the following steps S101 to S102.
S101: acquiring the concentration of hydrofluoric acid in mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state.
Exemplary, the mixed acid may include HNA mixed acid; the device to be etched may include a backside illuminated sensor; etching the device to be etched may refer to thinning a wafer substrate of the device to be etched, where the wafer main component includes P + -Si (P-doped silicon); the mixed acid comprises hydrofluoric acid, nitric acid and acetic acid, so that an intermediate product of the mixed acid and the wafer contains NO 2 (Nitrogen dioxide) gas, NO 2 Is a key intermediate product affecting the etching rate of mixed acid, and along with NO 2 The content of the mixed acid is gradually increased, and the etching rate of the mixed acid on the wafer is gradually increased; because the initial mixed acid etches the wafer very slowly and is close to no etching, the mixed acid needs to be activated by using a preset control chip, so that the mixed acid can etch the wafer normally; thus the mixed acid in the activated state can be understood as: the existing wafer or the preset control wafer reacts with the mixed acid to generate enough NO in the mixed acid barrel 2 The mixed acid is kept at NO 2 The etching device has certain etching capability in the atmosphere.
It can be understood that in the activation process of the mixed acid, a preset control wafer or a wafer is placed in an initial mixed acid, the concentration of hydrofluoric acid in the initial mixed acid can be 7.5% -8.5%, the preset control wafer or the wafer is used as a catalyst to promote the decomposition of nitric acid in the mixed acid, and the reaction process is represented by a chemical formula:
wherein HNO is 3 Indicating nitric acid, NO 2 Represents nitrogen dioxide, H 2 O represents water, O 2 Representing oxygen.
Exemplary preset control wafers include, but are not limited to, highly P-doped wafers (P + wafer), low P-doped wafer (P - wafer), wherein the conductivity of the high P-type doped wafer can be set to be less than 0.01 Ω m, and the conductivity of the low P-type doped wafer is set in the range of 9 Ω m to 11 Ω m.
Based on the above formula (1), nitrogen dioxide is generated by the decomposition of nitric acid in the mixed acid, and thus, the etching solution contains nitrogen dioxide; in some examples, the mixed acid etched wafer involves mainly the following chemical reaction process:
(1) NO in nitric acid 2 Is reduced at the cathode site to generate free holes, and the reaction process is as follows:
wherein h is + Representing free holes;
(2) The wafer is lifted to a higher oxidation state at the anode sites, wherein the anode sites provide positive charge in the form of holes, and the reaction proceeds as follows:
wherein Si is 0 Representing silicon, si in an initial state 2+ Represents silicon ions;
（3）Si 2+ with OH - (hydroxyl ions) are combined to form SiO 2 (Di-oxidation)Silicon), the reaction process is as follows:
wherein Si (OH) 2 Represents silicon hydroxide, H 2 O represents water;
（4）SiO 2 dissolved in HF (hydrofluoric acid), the reaction process is as follows:
wherein H is 2 SiF 6 Represents fluosilicic acid.
S102: and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge a preset volume of mixed acid, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
Wherein the preset threshold is the lowest concentration value of hydrofluoric acid set according to actual etching requirements, it can be understood that in the process of etching a device by mixed acid, the concentration of hydrofluoric acid gradually decreases, when the concentration of hydrofluoric acid in the mixed acid barrel decreases to the preset threshold, a preset volume of reacted mixed acid needs to be discharged, and a certain volume of new mixed acid is added, the new mixed acid can be the initial mixed acid, the concentration of hydrofluoric acid in the new mixed acid is higher than the preset threshold, and as a certain volume of mixed acid after previous reaction is still left in the mixed acid barrel, some NO is still left in the mixed acid barrel 2 Therefore, the mixed acid obtained after adding the new mixed acid is still in an activated state, and the concentration of hydrofluoric acid in the mixed acid barrel is maintained within a preset range, so that enough hydrofluoric acid is available for etching while the activated state of the mixed acid is maintained.
For example, referring to fig. 2, an acid changing process is schematically shown, where the acid mixing barrel 1 is provided with an acid inlet 11 and an acid outlet 12, an initial mixed acid 20 with an initial volume is injected into the acid mixing barrel 1, the initial mixed acid 20 gradually changes into an old mixed acid 21 after reacting with a wafer, when the concentration of hydrofluoric acid is lower than a preset threshold value, the old mixed acid 21 with a preset volume is discharged through the acid outlet 12, and a new mixed acid 22 is injected through the acid inlet 11, so as to obtain a mixed acid 23 after mixing; and repeatedly recycling the process of discharging the old mixed acid 21 with a preset volume and injecting the new mixed acid 22 when the concentration of the hydrofluoric acid is lower than the preset threshold value to obtain the mixed acid 23 after mixing so as to keep the mixed acid in an activated state continuously.
Further, the devices to be etched can be put into the acid mixing barrel 1 in batches for etching, for example, the devices to be etched in each lot can be set according to the lot, the number of the devices to be etched in each lot is 20-30, 1 lot of devices to be etched are put into each lot, and after etching is finished, the lot of devices are taken out and transferred into process equipment of the next process.
According to the control method for the mixed acid activation state, the concentration of hydrofluoric acid in the mixed acid is obtained when the mixed acid is in the etching state, and part of the volume of the mixed acid is replaced when the concentration is lower than the preset threshold value; and the mixed acid barrel is controlled to discharge mixed acid with a preset volume, new mixed acid is injected into the mixed acid barrel, so that the concentration of hydrofluoric acid in the mixed acid barrel is maintained within a preset range, the concentration of nitric acid and acetic acid in the mixed acid can be always maintained at a required concentration level, the conditions of sudden high and sudden low of the concentration of each acid in the mixed acid can not occur, the occurrence of abnormal conditions such as over etching or insufficient etching can be reduced, and the condition of abnormal performance of a semiconductor device prepared based on the etching process can be reduced.
In one embodiment, obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid tank is in an etching state may include: acquiring characteristic parameters of mixed acid in an etching state, wherein the characteristic parameters are used for representing the concentration of hydrofluoric acid in the mixed acid; wherein the characteristic parameter includes at least one of a color characteristic, a conductivity characteristic, and an ion concentration characteristic.
The color of the solution after the mixed acid reacts with the wafer can be collected by using a spectrometer, so that the characteristic parameters are obtained. Specifically, the color information of the reaction liquid may be obtained by measuring the wavelength of light by a spectrometer. In practical application, a spectrometer can be installed in the mixed acid bucket, and the color of the reaction liquid in the mixed acid bucket can be detected by the spectrometer.
The ion concentration characteristic can comprise the concentration of fluoride ions, and specifically, the concentration of hydrofluoric acid can be intuitively obtained by monitoring the concentration of fluoride ions in the solution after the mixed acid in the mixed acid barrel reacts with the wafer. In an actual process environment, the measured fluoride ion concentration may be displayed directly on a display of the terminal device by a curve or a numerical value.
In the above embodiment, the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid tank is in the etching state is obtained by an accurate test mode, so that a relatively accurate concentration value of hydrofluoric acid can be obtained, and whether the operations such as acid replacement and the like are needed or not can be judged in time based on the concentration value.
In one embodiment, injecting new mixed acid into the mixed acid tank to maintain the concentration of hydrofluoric acid in the mixed acid tank within a preset range may include: injecting a new mixed acid with a preset volume into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range; wherein the preset range is 82% -95% of the concentration of hydrofluoric acid in the new mixed acid.
The concentration corresponding to the preset range can be 7% -8%, and it can be understood that after the mixed acid with the preset volume is discharged and the new mixed acid is added, the concentration of hydrofluoric acid in the obtained mixed acid is 7% -8%, namely after the new mixed acid is injected into the mixed acid barrel, the concentration of hydrofluoric acid in the current mixed acid barrel is 7% -8%.
Further, the concentration corresponding to the preset range may be 7%, 7.5% or 8%; the concentration corresponding to the preset range may be other concentrations ranging from 7% to 8%, and is not limited by examples.
It should be noted that, the preset range is set correspondingly according to the initial mixed acid, the preset volume and the actual requirement, and may be calculated according to the initial mixed acid concentration, the preset volume and the actual process requirement, and the specific numerical ranges listed above are only examples for easy understanding, and are not used for limiting the protection range of the scheme.
In one embodiment, the preset threshold is 4.5% -5.5%.
The preset threshold value is 4.5% -5.5%, which is understood that when the concentration of hydrofluoric acid in the mixed acid barrel is reduced to 4.5% -5.5%, the mixed acid barrel needs to be controlled to discharge the mixed acid with a preset volume, and new mixed acid is injected into the mixed acid barrel to maintain the hydrofluoric acid with a sufficient concentration for etching.
The preset threshold may be, for example, 4.5%, 5% or 5.5%, or may be any other concentration between 4.5% and 5.5%, without limitation.
The concentration of hydrofluoric acid in the initial mixed acid is 7.5% -8.5%, and along with the reaction of the mixed acid and a device to be etched, the concentration of hydrofluoric acid is gradually reduced, so that a preset threshold value is required to be set for clamping control, and the corrosion rate of the mixed acid can be ensured to be within the required corrosion rate range all the time.
In one embodiment, the concentration of hydrofluoric acid in the fresh mixed acid is 7.5% -8.5%.
Wherein the new mixed acid can be an initial mixed acid, the concentration of hydrofluoric acid in the new mixed acid can be 7.5% -8.5%, the new mixed acid is added into the mixed acid barrel to be mixed with the old mixed acid remained before so as to improve the concentration of the whole mixed acid, and the initial mixed acid comprises hydrofluoric acid, nitric acid and acetic acid, so that NO 2 The concentration of the acid mixture is not reduced, and the whole mixed acid can be always in an activated state, and the required corrosion rate can be maintained.
The concentration of hydrofluoric acid in the new mixed acid can be 7.5%, 8% or 8%, or can be other concentrations between 7% -8%, without being limited by examples.
In one embodiment, the predetermined volume is 3/5 to 7/10 of the initial volume.
Wherein the preset volume is 3/5-7/10 of the initial volume, which can be understood as discharging 3/5-7/10 of the old mixed acid when the concentration of hydrofluoric acid in the mixed acid barrel is monitored to be reduced to a preset threshold value; and setting the initial volume as L, and discharging the liquid at a volume of 3/5L-7/10L.
The preset volume may be 3/5, 2/3 or 7/10 of the initial volume, or may be other volumes within the range of 3/5 to 7/10 of the initial volume, which is not limited by examples.
In one embodiment, the volume of the injected fresh mixed acid may be a predetermined volume.
It is understood that when the concentration of hydrofluoric acid in the mixed acid tank is monitored to be reduced to a preset threshold value, a preset volume of old mixed acid is discharged, and a preset volume of new mixed acid is added to maintain the total volume unchanged.
For convenience of understanding, implementation of the scheme can be described by adopting 2/3 of the preset volume as the initial volume, the initial volume is set to be L, the preset volume is set to be 2/3L, when the concentration of hydrofluoric acid in the mixed acid barrel is reduced to a preset threshold value, 2/3L of old mixed acid is discharged, 2/3L of new mixed acid is injected, the whole volume of the mixed acid after mixing is still kept to be L, so that the discharge and injection of the mixed acid with the same volume are still carried out when the concentration of the hydrofluoric acid in the mixed acid barrel is monitored to be reduced to the preset threshold value next time, cyclic acid exchange can be realized, and the mixed acid is kept in an activated state for a long time; it should be noted that the preset volume 2/3 of the initial volume is specifically described for easy understanding of the solution, and is not intended to limit the scope of the solution of the present application.
It should be understood that, although the steps in the flowchart of fig. 1 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in fig. 1 may include a plurality of steps or stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily sequential, but may be performed in rotation or alternatively with at least a portion of the steps or stages in other steps or other steps.
The application also provides a control device for the activation state of the mixed acid, as shown in fig. 3, the control device for the activation state of the mixed acid comprises: etching machine 100, mixed acid barrel 1, acquisition device 3 and main control device 4; the etching machine 100 is internally provided with a mechanical arm 101, and the mechanical arm 101 is used for taking and placing a device 102 to be etched; the mixed acid barrel 1 is positioned in the etching machine 100 and is used for accommodating mixed acid 2, wherein the mixed acid 2 comprises hydrofluoric acid, nitric acid and acetic acid; the collection device 3 is connected with the mixed acid bucket 1 and is used for collecting the concentration of hydrofluoric acid in the mixed acid 2 when the mixed acid 2 in the mixed acid bucket 1 is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid 2 is in an activated state; the main control device 4 is connected with the mixed acid barrel 1 and the acquisition device 3, and is used for acquiring the concentration of hydrofluoric acid in the mixed acid 2, controlling the mixed acid barrel 1 to discharge mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting new mixed acid into the mixed acid barrel 1 so as to maintain the concentration of the hydrofluoric acid in the mixed acid barrel 1 within a preset range.
Still referring to fig. 3, the mixed acid barrel 1 is provided with an acid inlet 11 and an acid outlet 12, an initial mixed acid with an initial volume is injected into the mixed acid barrel 1, the initial mixed acid gradually becomes old mixed acid after reacting with a wafer, when the concentration of hydrofluoric acid is lower than a preset threshold value, the old mixed acid with the preset volume is discharged through the acid outlet 12, and a new mixed acid is injected through the acid inlet 11, so that mixed acid after mixing is obtained; and repeatedly recycling the process of discharging the old mixed acid with a preset volume and injecting the new mixed acid when the concentration of the hydrofluoric acid is lower than a preset threshold value to obtain the mixed acid after mixing so as to keep the mixed acid in an activated state continuously.
In the control device for the mixed acid activation state in the embodiment, the collection device 3 is used for collecting the concentration of hydrofluoric acid in the mixed acid 2 when the mixed acid 2 is in the etching state, and the main control device 4 is used for controlling the mixed acid barrel 1 to discharge the mixed acid 2 with a preset volume when the concentration is lower than the preset threshold value; and the mixed acid barrel 1 is controlled to discharge mixed acid with preset volume and new mixed acid is injected into the mixed acid barrel, so that the concentration of hydrofluoric acid in the mixed acid barrel 1 is maintained within a preset range, the concentration of nitric acid and acetic acid in the mixed acid can be always maintained at a required concentration level, the conditions of abrupt high and abrupt low of the concentration of each acid in the mixed acid can not occur, the occurrence of abnormal conditions such as over etching or insufficient etching can be reduced, and the condition of abnormal performance of a semiconductor device prepared based on the etching process can be reduced.
Based on the same inventive concept, the embodiment of the application also provides a control device for realizing the mixed acid activation state of the control method for the mixed acid activation state. The implementation of the solution provided by the device is similar to the implementation described in the above method, so the specific limitation in the embodiment of the control device for the mixed acid activation state provided below may refer to the limitation of the control method for the mixed acid activation state described above, and will not be repeated herein.
In one embodiment, as shown in fig. 4, there is provided a control device for a mixed acid activation state, including: an acquisition module 401 and a control module 402, wherein:
an obtaining module 401, configured to obtain a concentration of hydrofluoric acid in the mixed acid when the mixed acid is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state.
And the control module 402 is connected with the acquisition module 401 and is used for controlling the mixed acid barrel to discharge the mixed acid with the preset volume when the concentration is lower than the preset threshold value, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within the preset range.
In the above embodiment, the control device for the mixed acid activation state acquires the concentration of hydrofluoric acid in the mixed acid when the mixed acid is in the etching state through the acquisition module 401, and controls the mixed acid barrel to discharge the mixed acid with a preset volume through the control module 402 when the concentration is lower than the preset threshold value; and the mixed acid barrel is controlled to discharge mixed acid with preset volume and new mixed acid is injected into the mixed acid barrel, so that the concentration of hydrofluoric acid in the mixed acid barrel is maintained within a preset range, the concentration of nitric acid and acetic acid in the mixed acid can be always maintained at a required concentration level, the conditions of sudden high and sudden low of the concentration of each acid in the mixed acid can not occur, the occurrence of abnormal conditions such as over etching or insufficient etching can be reduced, and the condition of abnormal performance of a semiconductor device prepared based on the etching process can be reduced.
In one embodiment, a computer device is provided, which may be a terminal, and the internal structure of which may be as shown in fig. 5. The computer device includes a processor, a memory, an input/output interface, a communication interface, a display unit, and an input means. The processor, the memory and the input/output interface are connected through a system bus, and the communication interface, the display unit and the input device are connected to the system bus through the input/output interface. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The input/output interface of the computer device is used to exchange information between the processor and the external device. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless mode can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program, when executed by a processor, implements a method for controlling the activation state of a mixed acid. The display unit of the computer device is used for forming a visual picture, and can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, can also be a key, a track ball or a touch pad arranged on the shell of the computer equipment, and can also be an external keyboard, a touch pad or a mouse and the like.
It will be appreciated by those skilled in the art that the structure shown in fig. 5 is merely a block diagram of a portion of the structure associated with the present application and is not limiting of the electronic device to which the present application is applied, and that a particular electronic device may include more or fewer components than shown, or may combine certain components, or have a different arrangement of components.
In one embodiment, a computer device is provided comprising a memory and a processor, the memory having stored therein a computer program, the processor when executing the computer program performing the steps of:
acquiring the concentration of hydrofluoric acid in mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge a preset volume of the mixed acid, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
In one embodiment, a computer readable storage medium is provided having a computer program stored thereon, which when executed by a processor, performs the steps of:
acquiring the concentration of hydrofluoric acid in mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge a preset volume of the mixed acid, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
In one embodiment, a computer program product is provided comprising a computer program which, when executed by a processor, performs the steps of:
acquiring the concentration of hydrofluoric acid in mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state;
and when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge a preset volume of the mixed acid, and injecting new mixed acid into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, database, or other medium used in the various embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high density embedded nonvolatile Memory, resistive random access Memory (ReRAM), magnetic random access Memory (Magnetoresistive Random Access Memory, MRAM), ferroelectric Memory (Ferroelectric Random Access Memory, FRAM), phase change Memory (Phase Change Memory, PCM), graphene Memory, and the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory, and the like. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like. The databases referred to in the various embodiments provided herein may include at least one of relational databases and non-relational databases. The non-relational database may include, but is not limited to, a blockchain-based distributed database, and the like. The processors referred to in the embodiments provided herein may be general purpose processors, central processing units, graphics processors, digital signal processors, programmable logic units, quantum computing-based data processing logic units, etc., without being limited thereto.
The technical features of the above embodiments may be arbitrarily combined, and for brevity, all of the possible combinations of the technical features of the above embodiments are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (9)
1. A method for controlling the activation state of a mixed acid, wherein the mixed acid comprises hydrofluoric acid, nitric acid and acetic acid, and the method is characterized by comprising the following steps:
acquiring the concentration of hydrofluoric acid in mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state, and the mixed acid is in the activated state and comprises the following components: the existing wafer or the preset control wafer reacts with the mixed acid to generate enough NO in the mixed acid barrel 2 Subjecting the mixed acid to NO 2 The etching device has certain etching capability on the device to be etched in the atmosphere;
when the concentration is lower than a preset threshold value, controlling the mixed acid barrel to discharge a preset volume of the mixed acid, and injecting a new mixed acid with the preset volume into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range; the preset volume is 3/5-7/10 of the initial volume, and the preset range is 82% -95% of the concentration of hydrofluoric acid in the new mixed acid.
2. The method for controlling the activation state of mixed acid according to claim 1, wherein the step of obtaining the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid tank is in the etching state comprises the steps of:
acquiring characteristic parameters of the mixed acid in an etching state, wherein the characteristic parameters are used for representing the concentration of hydrofluoric acid in the mixed acid; wherein the characteristic parameter includes at least one of a color characteristic, a conductivity characteristic, and an ion concentration characteristic.
3. The method for controlling the activation state of mixed acid according to claim 1, wherein the concentration of hydrofluoric acid corresponding to the preset range is 7% -8%.
4. The method for controlling the activation state of mixed acid according to claim 1, wherein the preset threshold is 4.5% -5.5%.
5. The method for controlling the activation state of mixed acid according to claim 1, wherein the concentration of hydrofluoric acid in the new mixed acid is 7.5% -8.5%.
6. A control device for the activation state of a mixed acid, comprising:
the etching machine is internally provided with a mechanical arm which is used for taking and placing a device to be etched;
the mixed acid barrel is positioned in the etching machine and used for accommodating mixed acid, and the mixed acid comprises hydrofluoric acid, nitric acid and acetic acid;
the collection device is connected with the mixed acid barrel and is used for collecting the concentration of hydrofluoric acid in the mixed acid when the mixed acid in the mixed acid barrel is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state, and the mixed acid is in the activated state and comprises the following components: the existing wafer or the preset control wafer reacts with the mixed acid to generate enough NO in the mixed acid barrel 2 Subjecting the mixed acid to NO 2 The etching device has certain etching capability on the device to be etched in the atmosphere;
the main control device is connected with the mixed acid barrel and the acquisition device and is used for acquiring the concentration of hydrofluoric acid in the mixed acid, controlling the mixed acid barrel to discharge the mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting new mixed acid with the preset volume into the mixed acid barrel so as to maintain the concentration of the hydrofluoric acid in the mixed acid barrel within a preset range; the preset volume is 3/5-7/10 of the initial volume, and the preset range is 82% -95% of the concentration of hydrofluoric acid in the new mixed acid.
7. A control device for the activation state of a mixed acid, comprising:
the device comprises an acquisition module, a control module and a control module, wherein the acquisition module is used for acquiring the concentration of hydrofluoric acid in mixed acid when the mixed acid is in an etching state; the etching state comprises a state of etching the device to be etched when the mixed acid is in an activated state, and the mixed acid in the activated state comprises: the existing wafer or the preset control wafer reacts with the mixed acid to generate enough NO in the mixed acid barrel 2 Subjecting the mixed acid to NO 2 The etching device has certain etching capability on the device to be etched in the atmosphere;
the control module is connected with the acquisition module and used for controlling the mixed acid barrel to discharge the mixed acid with a preset volume when the concentration is lower than a preset threshold value, and injecting the new mixed acid with the preset volume into the mixed acid barrel so as to maintain the concentration of hydrofluoric acid in the mixed acid barrel within a preset range; the preset volume is 3/5-7/10 of the initial volume, and the preset range is 82% -95% of the concentration of hydrofluoric acid in the new mixed acid.
8. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any one of claims 1 to 5 when the computer program is executed.
9. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 5.
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