CN109801865A - Room temperature etching device and correlation method for cell piece - Google Patents
Room temperature etching device and correlation method for cell piece Download PDFInfo
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- CN109801865A CN109801865A CN201910102482.4A CN201910102482A CN109801865A CN 109801865 A CN109801865 A CN 109801865A CN 201910102482 A CN201910102482 A CN 201910102482A CN 109801865 A CN109801865 A CN 109801865A
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- etching
- idler wheel
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention relates to a kind of room temperature etching devices for cell piece, and the room temperature etching device includes for holding including HF and HNO3Nitration mixture etching liquid etching groove, HNO in the nitration mixture etching liquid3Concentration is higher than HF concentration, the several idler wheels being sequentially distributed are provided in the etching groove, several idler wheels include first idler wheel with first diameter and the second idler wheel with second diameter, the first diameter is set smaller than the second diameter, and first idler wheel is arranged close to cell piece and enters groove location.The present invention also provides corresponding room temperature lithographic methods.Using the room temperature etching device and correlation method for cell piece of the invention, room temperature etching batch steady production may be implemented, it crosses ratio of doing over again at quarter to stablize within 0.15%, etched better than in industry to carve the average level done over again, save the cost simultaneously pushes technical progress of industry.
Description
Technical field
The present invention relates to photovoltaic solar cell manufacturing field, in particular to a kind of room temperature etching devices for cell piece
And correlation method.
Background technique
It as shown in Figure 1, being conventional crystalline silicon solar cell main manufacturing processes flow chart, is manufactured in solar battery
Industry is the known and general process flow of industry, comprising: 1) silicon wafer wool making, in the sunken light knot of silicon chip surface production flannelette dress
Structure；2) diffusion production PN junction；3) it removes phosphorosilicate glass (PSG layers) and etches away the diffusion layer at edge and the back side, using chemical attack
The methods of removal silicon chip edge and the back side diffusion layer, with eliminate P-N junction short circuit；4) antireflective coating is made；5) rear electrode and
Aluminum back electric field printing；6) front electrode prints；7) sintering furnace high temperature co-firing (metallization).
Wherein third step side is insulated, industry universal HF and HNO3Mixed acid solution passes through idler wheel band liquid side with chain type etching machine
The formula corrosion of silicon back side and edge, nitration mixture etching groove use refrigeration machine cooling, and temperature control is to 3 DEG C~10 DEG C to control reaction speed.
Silicon wafer is in chain type etching machine HF+HNO3During advancing in nitration mixture slot, roller surface band liquid.Since liquid tension is made
With silicon chip edge and the back side can touch mixed acid liquid, and silicon chip edge and the back side are constantly corroded in slot, to reach P-N junction
The purpose of insulation.The chemical equation that silicon wafer corrodes in nitration mixture medical fluid is as follows:
3Si+4HNO3+ 18HF=3H2SiF6+8H2O+4NO↑
Nitric oxide gas releasing is had in reaction process.The accumulation of nitric oxide bubble bursts the nitration mixture medical fluid that will lead to
It is general to will lead to front knot to front and be corroded, destroy, while nitration mixture medical fluid is general to front, also results in front appearance exception.Row
In the industry nitration mixture because a variety of causes it is general to front due to cause the image of silicon wafer exception to be called quarter.
To solve the problems, such as that it's quarter pasts etching machine, etching machine is equipped with ice water mechanism cold in industry, controls the temperature of nitration mixture slot medical fluid
It spends, nitration mixture bath temperature degree maintains 3 DEG C~10 DEG C after refrigeration, to slow down corrosion rate, avoiding bubble from acutely releasing leads to product
It is abnormal.
The shortcomings that this technology is frozen water machine longtime running, needs to consume a large amount of electric energy, and maintenance, upkeep cost also compare
It is high.
The present invention provides a kind of process program and does not need ice water mechanism cold temperature control, it is achieved that and guaranteeing to lose under room temperature
The effect and appearance at quarter are normal (not having the general liquid of acid solution to front led to quarter).
Summary of the invention
The purpose of the present invention is overcome it is above-mentioned in the prior art the shortcomings that, provide outside a kind of edge insulation effect and front
Sight is stably and controllable, fully meets mass production requirement, can completely close or directly remove frozen water machine, power cost saving and ice
The room temperature etching device and correlation method for cell piece of water dispenser maintenance expense.
In order to achieve the above objectives, the present invention provides a kind of room temperature etching devices for cell piece, using following technology
Scheme:
The room temperature etching device includes for holding including HF and HNO3Nitration mixture etching liquid etching groove, it is described
HNO in nitration mixture etching liquid3Concentration is higher than HF concentration, is provided with the several idler wheels being sequentially distributed in the etching groove, described
Several idler wheels include first idler wheel with first diameter and the second idler wheel with second diameter, the first diameter setting
At the second diameter is less than, and first idler wheel is arranged close to cell piece and enters groove location.
Preferably, the etching groove is open type etching groove.
Preferably, the bottom of the etching groove is provided with the inlet and outlet for cooling water disengaging, the cooling
The temperature of water is 20 DEG C~25 DEG C.
Preferably, several idler wheels include three the first idler wheels with first diameter, first idler wheel
Diameter is 1mm smaller than the diameter of second idler wheel；It is described to enter groove location and be provided with third idler wheel, the third idler wheel with
Second idler wheel is identical.
The present invention also provides a kind of room temperature lithographic method for cell piece, the method includes: to adopt in etching groove
With including HF and HNO3Nitration mixture etching liquid, HNO in the nitration mixture etching liquid3Concentration be higher than HF concentration, the cell piece from
Enter groove location to enter successively by several first idler wheels and several second idler wheels after etching groove, the diameter of first idler wheel is set
It is set to the diameter less than second idler wheel, and first idler wheel is arranged close to cell piece and enters groove location, it is described
Cell piece successively moves on the first idler wheel and the second idler wheel after entering slot, and etching liquid is steadily adsorbed onto battery under tension
The back side of piece prevented from carving and etching back edge insulation is poor.
Preferably, the etching groove is open type etching groove.
Preferably, the etching liquid includes initial liquid and with liquid, V in the initial liquid(HF):V(HNO3):V(DI)=1:6
~7.5:1.5, V in the fluid infusion(HF):V(HNO3)=1:2.2~2.5.
Preferably, the bottom of the etching groove is provided with the inlet and outlet for cooling water disengaging, the cooling
The temperature of water is 20 DEG C~25 DEG C.
Preferably, the temperature of the etching is 23 DEG C~27 DEG C.
Preferably, the number of first idler wheel is 3, the diameter of first idler wheel is 24mm, described second
The diameter of idler wheel is 25mm.
Using the room temperature etching device and correlation method for cell piece of the invention, room temperature etching batch may be implemented
Steady production is crossed and carves ratio of doing over again and stablize within 0.15%, etched better than in industry to carve the average level done over again, save at
This simultaneously pushes technical progress of industry.
Detailed description of the invention
Fig. 1 is conventional crystalline silicon solar cell main manufacturing processes flow chart.
Fig. 2 is the structural schematic diagram of the room temperature etching device for cell piece of the invention.
Fig. 3 is the partial enlarged view of the room temperature etching device for cell piece of the invention.
Fig. 4 is the rework rate figure of the room temperature lithographic method for cell piece of the invention.
Appended drawing reference:
1 etching groove
2 nitration mixture etching liquids
3 first idler wheels
4 second idler wheels
5 enter groove location
Specific embodiment
In order to be more clearly understood that technology contents of the invention, spy lifts following embodiment and is described in detail.
It please refers to shown in attached drawing 2~3, is a kind of room temperature etching device for cell piece provided by the invention, it is described
Room temperature etching device includes for holding including HF and HNO3Nitration mixture etching liquid 2 etching groove 1, in the nitration mixture etching liquid
HNO3Concentration is higher than HF concentration, is provided with the several idler wheels being sequentially distributed in the etching groove, several idler wheels include
The first idler wheel 3 with first diameter and the second idler wheel 4 with second diameter, the first diameter are set smaller than described
Second diameter, and first idler wheel is arranged close to cell piece and enters groove location 5.
In the room temperature etching device embodiment provided by the present invention for cell piece, the etching groove is open type quarter
Slot is lost, compared to such as existing etching groove, without cover board and air draft pipe, cover board is removed for the groove body top of etching groove provided by the invention
Afterwards, condensed to condense low containing acid droplet, reaction process is steadily controllable, and wherein it is included that board can be used in exhausting
Side wall exhausting.
Chain type etching machine in industry is equipped with cover board on each groove body, and air draft pipe, air draft pipe connection are housed on cover board
On board main air draft.Hydrofluoric acid, the nitric acid gas of gas, volatilization that reaction generates are taken away by exhaust column.In this hair
In the room temperature etch approach of bright offer, technological temperature maintains 25 DEG C, in the case of having cover board, and acid mist and the water containing volatile acid steam
Gas is condensed on the cover board, is dripped, and be will lead to front side of silicon wafer and is corroded, and causes product bad.
In the room temperature etching device embodiment provided by the present invention for cell piece, the bottom of the etching groove is arranged
There is the inlet and outlet for cooling water disengaging, the temperature of the cooling water is 20 DEG C~25 DEG C, and cooling water can be used and follow
Ring refrigeration, cooling water connect the import and export in groove body bottom cold dish, and water temperature is preferably controlled in 20 DEG C~23 DEG C.
In the room temperature etching device embodiment provided by the present invention for cell piece, several idler wheels include three
The diameter of the first idler wheel with first diameter, first idler wheel is 1mm smaller than the diameter of second idler wheel；Described
Enter groove location and be provided with third idler wheel, the third idler wheel is identical as second idler wheel, etches for example, strangling for Al Kut
Machine, roller diameter=25mm when etching groove board dispatches from the factory.To guarantee that room temperature etch approach is realized, 3 roller diameters before etching groove
For=24mm.
The present invention also provides a kind of room temperature lithographic method for cell piece, the method includes: to adopt in etching groove
With including HF and HNO3Nitration mixture etching liquid, HNO in the nitration mixture etching liquid3Concentration be higher than HF concentration, the cell piece from
Enter groove location to enter successively by several first idler wheels and several second idler wheels after etching groove, the diameter of first idler wheel is set
It is set to the diameter less than second idler wheel, and first idler wheel is arranged close to cell piece and enters groove location, it is described
Cell piece successively moves on the first idler wheel and the second idler wheel after entering slot, and etching liquid is steadily adsorbed onto battery under tension
The back side of piece prevented from carving and etching back edge insulation is poor.
Silicon wafer enters slot moment, and medical fluid is smoothly adsorbed onto silicon chip back side under tension, not will lead to quarter.
In method provided by the invention, room temperature is etched in just slot allocation using low hydrogen fluoric acid, the etching liquid of high nitric acid；Etching
First three root idler wheel that slot touching liquid level is set, roller diameter are 1mm smaller than roller diameters other in groove body.
In the room temperature lithographic method embodiment provided by the present invention for cell piece, the etching groove is open type quarter
Lose slot.
In the room temperature lithographic method embodiment provided by the present invention for cell piece, the etching liquid includes initial liquid
With match liquid, the volume ratio V of hydrofluoric acid, nitric acid and water in the initial liquid(HF):V(HNO3):V(DI)=1:6~7.5:1.5, volume production
When fluid infusion in hydrofluoric acid, nitric acid volume ratio V(HF):V(HNO3)=1:2.2~2.5.For example, V(HF):V(HNO3):V(DI)=1:6.2:
1.5, feeding ratio V(HF):V(HNO3)=1:2.3.Wherein, hydrofluoric acid mass fraction 48.6%, nitric acid mass fraction 68.7%.
Wherein, hydrofluoric acid, nitric acid slot allocation and fluid infusion are all to follow nitric acid excess principle, it is therefore an objective to slow down HF corrosion SiO2
Speed.Si and HF, HNO3When reaction, HNO3Si can be oxidized to SiO first2, then HF erodes SiO again2, to allow reaction
Constantly carry out.Under lower HF concentration, SiO2Corrosion rate is slow, can stop HNO3Lasting corrosion to silicon base, NO gas are released
Amount and generation speed have just obtained good control.
In the room temperature lithographic method embodiment provided by the present invention for cell piece, the bottom of the etching groove is arranged
There is the inlet and outlet for cooling water disengaging, the temperature of the cooling water is 20 DEG C~25 DEG C, uses cooling water temperature side
Fluid temperature is constant in formula retention groove body.
In the room temperature lithographic method embodiment provided by the present invention for cell piece, the temperature of the etching is 23 DEG C
~27 DEG C that is, etching groove medical fluid technological temperature is controlled at 25 ± 2 DEG C.
In the room temperature lithographic method embodiment provided by the present invention for cell piece, the number of first idler wheel is
3, the diameter of first idler wheel is 24mm, and the diameter of second idler wheel is 25mm.
As shown in figures 2-3, close to cell piece enter groove location 5 be respectively etching groove in the 1st, 2,3 idler wheel, this three
Roller diameter is 1mm smaller than roller diameters other in board.Silicon wafer and etching groove medical fluid Contact, under liquid medicine tension effect,
Medical fluid moment adsorbs the silicon back side and side, will lead to the fluctuation of contact position medical fluid greatly, it's quarter pasts silicon wafer.Just touching liquid level is set using diameter
The idler wheel of small 1mm can solve the medical fluid fluctuation of silicon wafer and medical fluid Contact, and since the 4th idler wheel, roller diameter increases
Add, silicon wafer and medical fluid surface distance increase, but medical fluid is under tension again without departing from silicon wafer.Silicon wafer both will not mistake in this way
It carves, etching back edge insulation will not be caused poor.
Room temperature etch approach provided by the invention be one kind can at normal temperature (25 DEG C), using HF+HNO3Complete crystal silicon
The scheme of battery edge and insulating backside, for the new process program that silicon chip edge corrodes after diffusion.The program can disappear
Dependence except conventional etching process to ice water mechanism cold, directly dismounting frozen water machine, and procedure for producing stability will not be brought
It influences.To save frozen water machine maintenance expense, solar battery manufacturing cost is reduced.
This scheme can directly be generalized to the chain type etching machine used in current industry, and what is corroded in batch production process subtracts
Weight, edge insulation effect and front appearance are stably and controllable, fully meet mass production requirement.The present invention can completely close
Or directly remove frozen water machine, power cost saving and frozen water machine maintenance expense.
Room temperature etch approach provided by the invention, has removed frozen water machine, has saved frozen water machine maintenance expense, has solved because of ice
Water dispenser failure leads to delay machine risk.Before room temperature etch approach of the invention is not used, 6 months frozen water machine failures and delay machine
Time statistics is shown in Table 1.In terms of statistical data, using ice water mechanism cold, that there are failures is more, and delay machine influences to produce frequent problem.Year
Maintenance expense statistics is shown in Table 2, and annual maintenance expense is more than 220,000 yuan of RMB.
Table 1: using in the case of ice water mechanism cold, frozen water machine most common failure and maintenance time are counted
Table 2: ice water mechanism year maintenance expense statistics
Using the room temperature etching device and correlation method for cell piece of the invention, room temperature etching batch may be implemented
Steady production is stablized within 0.15% as shown in figure 4, crossing and carving ratio of doing over again, and what better than in industry, etched quarter did over again is averaged
Level, save the cost simultaneously push technical progress of industry.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that can still make
Various modifications and alterations are without departing from the spirit and scope of the invention.Therefore, the description and the appended drawings should be considered as illustrative
And not restrictive.
Claims (10)
1. a kind of room temperature etching device for cell piece, which is characterized in that the room temperature etching device includes for holding
Including HF and HNO3Nitration mixture etching liquid etching groove, HNO in the nitration mixture etching liquid3Concentration is higher than HF concentration, the quarter
The several idler wheels being sequentially distributed are provided in erosion slot, several idler wheels include having the first idler wheel of first diameter and having
Second idler wheel of second diameter, the first diameter is set smaller than the second diameter, and first idler wheel is set
It is set to and enters groove location close to cell piece.
2. the room temperature etching device according to claim 1 for cell piece, which is characterized in that the etching groove is spacious
Open type etching groove.
3. the room temperature etching device according to claim 1 for cell piece, which is characterized in that the bottom of the etching groove
Portion is provided with the inlet and outlet for cooling water disengaging, and the temperature of the cooling water is 20 DEG C~25 DEG C.
4. the room temperature etching device according to claim 1 for cell piece, which is characterized in that several idler wheel packets
Three the first idler wheels with first diameter are included, the diameter of first idler wheel is 1mm smaller than the diameter of second idler wheel；
The groove location that enters is provided with third idler wheel, and the third idler wheel is identical as second idler wheel.
5. a kind of room temperature lithographic method for cell piece, which is characterized in that the method includes: to use to include in etching groove
HF and HNO3Nitration mixture etching liquid, HNO in the nitration mixture etching liquid3Concentration is higher than HF concentration, and the cell piece is from entering slot position
It sets and enters successively by several first idler wheels and several second idler wheels after etching groove, the diameter of first idler wheel is arranged to small
In the diameter of second idler wheel, and first idler wheel is arranged close to cell piece and enters groove location, the cell piece
It is successively moved on the first idler wheel and the second idler wheel after entering slot, etching liquid is steadily adsorbed onto the back of cell piece under tension
Face prevented from carving and etching back edge insulation is poor.
6. the room temperature lithographic method according to claim 5 for cell piece, which is characterized in that the etching groove is spacious
Open type etching groove.
7. the room temperature lithographic method according to claim 5 for cell piece, which is characterized in that the etching liquid includes
Initial liquid and match liquid, V in the initial liquid(HF):V(HNO3):V(DI)=1:6~7.5:1.5, V in the fluid infusion(HF):
V(HNO3)=1:2.2~2.5.
8. the room temperature lithographic method according to claim 5 for cell piece, which is characterized in that the bottom of the etching groove
Portion is provided with the inlet and outlet for cooling water disengaging, and the temperature of the cooling water is 20 DEG C~25 DEG C.
9. the room temperature lithographic method according to claim 5 for cell piece, which is characterized in that the temperature of the etching
It is 23 DEG C~27 DEG C.
10. the room temperature lithographic method according to claim 5 for cell piece, which is characterized in that first idler wheel
Number be 3, the diameter of first idler wheel is 24mm, and the diameter of second idler wheel is 25mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910102482.4A CN109801865A (en) | 2019-02-01 | 2019-02-01 | Room temperature etching device and correlation method for cell piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910102482.4A CN109801865A (en) | 2019-02-01 | 2019-02-01 | Room temperature etching device and correlation method for cell piece |
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| Publication Number | Publication Date |
|---|---|
| CN109801865A true CN109801865A (en) | 2019-05-24 |
Family
ID=66561927
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910102482.4A Pending CN109801865A (en) | 2019-02-01 | 2019-02-01 | Room temperature etching device and correlation method for cell piece |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115579311A (en) * | 2022-12-02 | 2023-01-06 | 湖北江城芯片中试服务有限公司 | Control method and device for mixed acid activation state, computer equipment and storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544211A (en) * | 2011-12-31 | 2012-07-04 | 常州天合光能有限公司 | Solar cell etching method and equipment |
| CN202855722U (en) * | 2012-08-08 | 2013-04-03 | 浙江丰球光伏科技股份有限公司 | Wet etching machine |
| CN207068825U (en) * | 2017-04-28 | 2018-03-02 | 山西潞安太阳能科技有限责任公司 | Solar cell chain equipment roller devices |
-
2019
- 2019-02-01 CN CN201910102482.4A patent/CN109801865A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544211A (en) * | 2011-12-31 | 2012-07-04 | 常州天合光能有限公司 | Solar cell etching method and equipment |
| CN202855722U (en) * | 2012-08-08 | 2013-04-03 | 浙江丰球光伏科技股份有限公司 | Wet etching machine |
| CN207068825U (en) * | 2017-04-28 | 2018-03-02 | 山西潞安太阳能科技有限责任公司 | Solar cell chain equipment roller devices |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115579311A (en) * | 2022-12-02 | 2023-01-06 | 湖北江城芯片中试服务有限公司 | Control method and device for mixed acid activation state, computer equipment and storage medium |
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